CN114336565A - Lightning protection device based on high-temperature silicon piezoresistive sensor and lightning protection method thereof - Google Patents
Lightning protection device based on high-temperature silicon piezoresistive sensor and lightning protection method thereof Download PDFInfo
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- CN114336565A CN114336565A CN202210228307.1A CN202210228307A CN114336565A CN 114336565 A CN114336565 A CN 114336565A CN 202210228307 A CN202210228307 A CN 202210228307A CN 114336565 A CN114336565 A CN 114336565A
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Abstract
The invention discloses a lightning protection device based on a high-temperature silicon piezoresistive sensor and a lightning protection method thereof, wherein the lightning protection device is of a shielding structure, and a lightning protection circuit is arranged in the shielding structure; the input/output interface of the shielding structure is connected with the excitation voltage of the silicon piezoresistive sensor core body, and the lightning protection circuit comprises a first TVS device, a second TVS device, the silicon piezoresistive sensor core body and a high-temperature operational amplifier; and the output signal of the silicon piezoresistive sensor core body is connected with the first TVS device and is connected with the second TVS device through a high-temperature operational amplifier. The isolation function of the high-temperature operational amplifier between the silicon piezoresistive sensor and the TVS device is utilized, so that the output signal of the silicon piezoresistive sensor is not directly connected with the TVS device, and the output performance of the silicon piezoresistive sensor is not influenced by the increase of the leakage current of the TVS device even at high temperature.
Description
Technical Field
The invention belongs to a high-temperature semiconductor device, and particularly relates to a lightning protection device based on a high-temperature silicon piezoresistive sensor and a lightning protection method thereof.
Background
Silicon piezoresistive sensors are widely used in aerospace vehicles, particularly engines. Aircraft inevitably fly in thunderstorm weather, and lightning strikes are inevitable, so that it is very important and necessary to strengthen the lightning protection of the aircraft.
At present, sensors for measuring engine parameters require high measurement accuracy, fast response, small repeatability, small hysteresis, small nonlinearity, high working temperature (200 ℃), small volume and light weight, so silicon piezoresistive sensors are widely applied to the field of engines.
The leakage current of the lightning protection device is remarkably increased at the temperature of more than 100 ℃, the lightning protection device is designed according to the traditional lightning protection requirement, and the lightning protection device influences the bridge arm resistance value of the silicon piezoresistive sensor at the high temperature of more than 100 ℃, and finally influences the output performance of the silicon piezoresistive sensor.
Disclosure of Invention
Aiming at the defects in the prior art, the lightning protection device based on the high-temperature silicon piezoresistive sensor and the lightning protection method thereof provided by the invention solve the problem that the output performance of the silicon piezoresistive sensor is influenced when the lightning protection technology is applied to the silicon piezoresistive sensor.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that: a lightning protection device based on a high-temperature silicon piezoresistive sensor is characterized in that the lightning protection device is a shielding structure, and a lightning protection circuit is arranged in the shielding structure;
the input/output interface of the shielding structure is connected with the excitation voltage of the silicon piezoresistive sensor core body, and the lightning protection circuit comprises a first TVS device, a second TVS device, the silicon piezoresistive sensor core body and a high-temperature operational amplifier;
and the output signal of the silicon piezoresistive sensor core body is connected with the first TVS device and is connected with the second TVS device through a high-temperature operational amplifier.
The invention has the beneficial effects that:
(1) the device can be used for testing the parameters of the aircraft engine and monitoring the parameters.
(2) Based on the lightning protection characteristic of the device, the influence of lightning on the engine can be greatly reduced, the engine parameters are normally tested in a lightning environment, the normal work of the engine is ensured, and the flight safety is ensured.
(3) The design of the invention can greatly improve the application range and the working reliability of the device.
Furthermore, the positive output end and the negative output end of the silicon piezoresistive sensor core body are respectively connected with a high-temperature operational amplifier.
Further, the first TVS device includes a first TVS and a second TVS, the high temperature operational amplifier includes a first high temperature operational amplifier and a second high temperature operational amplifier, and the second TVS device includes a third TVS and a fourth TVS;
one end of the first TVS is connected with a power supply VCC and the positive input end of the silicon piezoresistive sensor core body respectively, and the other end of the first TVS is connected with the lightning protection device shell;
one end of the second TVS is connected with the negative input end of the silicon piezoresistive sensor core and is grounded, and the other end of the second TVS is connected with the lightning protection device shell;
the positive output end of the silicon piezoresistive sensor core body is connected with the non-inverting input end of a first operational amplifier, the inverting input end of the first operational amplifier is respectively connected with the output end of the first operational amplifier and one end of a third TVS and serves as the positive output end of the lightning protection circuit, and the other end of the third TVS is connected with the lightning protection device shell;
the negative output end of the silicon piezoresistive sensor core body is connected with the non-inverting input end of a second operational amplifier, the inverting input end of the second operational amplifier is respectively connected with the output end of the second operational amplifier and one end of a fourth TVS and serves as the negative output end of the lightning protection circuit, and the other end of the fourth TVS is connected with the lightning protection device shell;
the power supply end of the first operational amplifier is connected with a power supply VCC, the grounding end of the first operational amplifier is connected with the power supply end of the second operational amplifier, and the grounding end of the second operational amplifier is grounded.
The beneficial effects of the above further scheme are: the isolation function of the high-temperature operational amplifier between the silicon piezoresistive sensor and the TVS device is utilized, so that the output signal of the silicon piezoresistive sensor is not directly connected with the TVS device, and the output performance of the silicon piezoresistive sensor is not influenced by the increase of the leakage current of the TVS device even at high temperature (above 100 ℃).
Further, the lightning protection device shell is in lightning protection grounding.
The beneficial effects of the above further scheme are: according to the invention, the shell of the lightning protection device is grounded, and the shell of the lightning protection device has good conductivity, namely the contact resistance between the shell of the lightning protection device and the ground is not more than 1m omega, so that a conduction channel is provided for a lightning signal.
Further, the shell of the lightning protection device is of a stainless steel structure.
The beneficial effects of the above further scheme are: the invention adopts the shell of the lightning protection device with a stainless steel structure, so that the lightning protection device can be used in the environment with severe conditions (such as large vibration value, salt fog, mould and the like).
Furthermore, its characterized in that, the model of first TVS, second TVS, third TVS to and fourth TVS is according to lightning protection grade setting of lightning protection test device, and every lightning protection grade all has corresponding first TVS, second TVS, third TVS to and the model setting of fourth TVS.
Furthermore, the models of the first TVS, the second TVS, the third TVS, and the fourth TVS under the same lightning protection test grade are the same.
Further, the lightning protection test level is proportional to the power of the first TVS, the second TVS, the third TVS, and the fourth TVS.
The beneficial effects of the above further scheme are: according to the invention, through accurate model selection of the two TVS devices, the TVS device can be suitable for various environments and has a good lightning protection effect.
When a lightning stroke signal breaks down a first TVS device, the output performance of a silicon piezoresistive sensor is protected by the isolation effect of a high-temperature operational amplifier between a second TVS device and a silicon piezoresistive sensor core body, and lightning protection is realized.
The invention has the beneficial effects that: the lightning protection method provided by the invention improves the application environment and the working reliability of the silicon piezoresistive sensor.
Drawings
Fig. 1 is a schematic structural diagram of an appearance of a lightning protection device based on a silicon piezoresistive sensor provided by the invention.
Fig. 2 is a schematic diagram of a lightning protection circuit provided by the present invention.
Fig. 3 is a schematic diagram of the operation of the lightning protection device provided by the present invention, wherein (a) is a schematic diagram of signal flow; (b) is a schematic diagram of signal change.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
Example 1:
the embodiment of the invention provides a lightning protection device based on a high-temperature silicon piezoresistive sensor as shown in figure 1, wherein the lightning protection device is a shielding structure, and a lightning protection circuit is arranged in the shielding structure;
the input/output interface of the shielding structure is connected with the excitation voltage of the silicon piezoresistive sensor core body, and the lightning protection circuit comprises a first TVS device, a second TVS device, the silicon piezoresistive sensor core body and a high-temperature operational amplifier; and the output signal of the silicon piezoresistive sensor core body is connected with the first TVS device and is connected with the second TVS device through a high-temperature operational amplifier.
In the embodiment of the invention, when the lightning protection device is installed, the installation support of the lightning protection device and the surface on which the lightning protection device is installed are required to be tightly combined, so that good conductivity is ensured (namely the contact resistance between the installation support and the surface is not more than 1m omega), and a conduction channel is further improved for a lightning signal.
In the embodiment of the invention, the positive output end and the negative output end of the silicon piezoresistive sensor core body are respectively connected with a high-temperature operational amplifier.
According to the scheme of the invention, the high-temperature operational amplifier with the isolation function is designed between the TVS device and the silicon piezoresistive sensor, so that the output signal of the silicon piezoresistive sensor is not directly connected with the TVS device, the influence of the TVS device on the output performance of the silicon piezoresistive sensor is avoided, and the lightning protection is further realized.
In the embodiment of the invention, the pressure access interface in fig. 1 is used for installing a silicon piezoresistive sensor core body, and converting a pressure signal into an electrical signal to be output; the input and output interface is an input channel of core body excitation voltages VCC and GND of the silicon piezoresistive sensor; vout +, Vout-; support mounting structure for the installation of product, after outside radar got into the product signal, lightning signal exported the dress lightning protection device shell through the TVS device, and exported the ground through corresponding installation face.
The high-temperature operational amplifier in the embodiment of the invention can be selected to be HJ1207 or HJ284, and the output signal of the isolation silicon piezoresistive sensor core body is connected with the second TVS device in the embodiment, so that the output performance of the silicon piezoresistive sensor is protected from being influenced by the TVS device.
The silicon piezoresistive sensor in the embodiment of the invention can be selected from the model of XTEL-194-190M-245KPa-A, XTEL-194-190M-4000KPa-A, and the silicon piezoresistive sensor can convert the sensed pressure signal into a voltage signal.
Example 2:
in this embodiment, a further improvement is made on the basis of embodiment 1, specifically, as shown in fig. 2, in the lightning protection circuit in this embodiment, the first TVS device includes a first TVS and a second TVS, the high-temperature operational amplifier includes a first high-temperature operational amplifier and a second high-temperature operational amplifier, and the second TVS device includes a third TVS and a fourth TVS;
one end of the first TVS is connected with a power supply VCC and the positive input end of the silicon piezoresistive sensor core body respectively, and the other end of the first TVS is connected with the lightning protection device shell; one end of the second TVS is connected with the negative input end of the silicon piezoresistive sensor core body and is grounded, and the other end of the second TVS is connected with the lightning protection device shell;
the positive output end of the silicon piezoresistive sensor core body is connected with the non-inverting input end of the first operational amplifier, the inverting input end of the first operational amplifier is respectively connected with the output end of the first operational amplifier and one end of the third TVS and serves as the positive output end of the lightning protection circuit, and the other end of the third TVS is connected with the lightning protection device shell; the negative output end of the silicon piezoresistive sensor core body is connected with the non-inverting input end of the second operational amplifier, the inverting input end of the second operational amplifier is respectively connected with the output end of the second operational amplifier and one end of the fourth TVS and serves as the negative output end of the lightning protection circuit, and the other end of the fourth TVS is connected with the lightning protection device shell;
the power supply end of the first operational amplifier is connected with a power supply VCC, the grounding end of the first operational amplifier is connected with the power supply end of the second operational amplifier, and the grounding end of the second operational amplifier is grounded.
The first operational amplifier and the second operational amplifier in this embodiment are the same in type, and together form a dual operational amplifier, which is used to isolate the silicon piezoresistive sensor core from the second TVS device, and protect the output performance of the silicon piezoresistive sensor core from being affected by the TVS device.
In this embodiment, VCC and GND in fig. 2 are excitation voltages provided by the silicon piezoresistive sensor core, Vout + and Vout-are voltage signals output by two bridge arms of the silicon piezoresistive sensor core, and the voltage signals are voltage signals converted from pressure signals sensed by the silicon piezoresistive sensor.
The lightning protection device shell lightning protection ground in this embodiment, it has good electric conductivity, and the contact resistance between lightning protection device shell and the ground is no more than 1m omega promptly, provides the conduction channel for the thunder and lightning signal.
The shell of the lightning protection device in the embodiment is of a stainless steel structure, so that the lightning protection device can be used in an environment with severe conditions (such as large vibration value, salt fog, mould and the like).
Example 3:
the present embodiment is a further improvement on embodiment 2, and the model numbers of the first TVS, the second TVS, the third TVS, and the fourth TVS in fig. 2 are set according to the lightning protection rating of the lightning protection device, and each lightning protection test rating has the corresponding model number setting of the first TVS, the second TVS, the third TVS, and the fourth TVS.
In this embodiment, the first TVS, the second TVS, the third TVS, and the fourth TVS under the same lightning protection test level have the same model, and the model of the TVS device is different under different lightning protection test levels.
In this embodiment, the lightning protection test level is in direct proportion to the power of the first TVS, the second TVS, the third TVS, and the fourth TVS, that is, the higher the lightning protection test level is, the higher the power of the TVS device is, after the power of the TVS device is determined, the clamping voltage of the TVS device needs to be determined according to the maximum working voltage borne by the device internal device, that is, the selection of the TVS device is determined by the actual power and the clamping voltage.
In the embodiment of the invention, for the lightning protection grade SY148CAS, the power of a TVS device required by the lightning protection grade SY148CAS is 1500W, and the maximum clamping voltage is 18.2V; the lightning protection grade SY202CAS corresponds to a TVS device with power of 3000W and maximum clamping voltage of 18.2V.
Example 4:
the embodiment is a lightning protection method based on any one of the lightning protection devices in embodiments 1 to 3, and specifically includes: when a lightning stroke signal breaks down the first TVS device, the output performance of the silicon piezoresistive sensor is protected by the isolation function of the high-temperature operational amplifier between the second TVS device and the silicon piezoresistive sensor core body, and lightning protection is realized.
The principle of the lightning protection method in the embodiment is as follows: as shown in fig. 3, the TVS device operates in principle (a) as signal flow direction and (b) as signal change, as shown in fig. 3(a) and 3(b), when the transient voltage exceeds the breakdown voltage of the TVS device, the TVS device receives a high-energy transient voltage, and its operating impedance can immediately decrease to a very low on-state value, i.e. the TVS device is broken down, at this time, the TVS device provides a low-impedance path to provide the transient current, so that the transient current flowing to the protected load is shunted to the TVS device, and the voltage across the protected load is limited to the clamping voltage of the TVS device, and when the overvoltage disappears, the TVS device returns to the high-impedance state. Therefore, in this embodiment, after lightning signal struck lightning protection device external cable, inside lightning signal passed through the cable admission gear, because lightning signal's voltage was higher than the breakdown voltage of TVS device, the TVS device was in low impedance path state this moment, and lightning signal passes through the TVS device and follows the leading-in ground of lightning protection device shell, and after lightning signal disappeared, the TVS device resumes high impedance.
In the description of the present invention, it is to be understood that the terms "center", "thickness", "upper", "lower", "horizontal", "top", "bottom", "inner", "outer", "radial", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or an implicit indication of the number of technical features. Thus, features defined as "first", "second", "third" may explicitly or implicitly include one or more of the features.
Claims (9)
1. A lightning protection device based on a high-temperature silicon piezoresistive sensor is characterized in that the lightning protection device is a shielding structure, and a lightning protection circuit is arranged in the shielding structure;
the input/output interface of the shielding structure is connected with the excitation voltage of the silicon piezoresistive sensor core body, and the lightning protection circuit comprises a first TVS device, a second TVS device, the silicon piezoresistive sensor core body and a high-temperature operational amplifier;
and the output signal of the silicon piezoresistive sensor core body is connected with the first TVS device and is connected with the second TVS device through a high-temperature operational amplifier.
2. The high-temperature silicon piezoresistive sensor-based lightning protection device according to claim 1, wherein the positive output terminal and the negative output terminal of the silicon piezoresistive sensor core are respectively connected to a high-temperature operational amplifier.
3. The high temperature silicon piezoresistive sensor-based lightning protection device according to claim 1, wherein said first TVS device comprises a first TVS and a second TVS, said high temperature operational amplifier comprises a first high temperature operational amplifier and a second high temperature operational amplifier, said second TVS device comprises a third TVS and a fourth TVS;
one end of the first TVS is connected with a power supply VCC and the positive input end of the silicon piezoresistive sensor core body respectively, and the other end of the first TVS is connected with the lightning protection device shell;
one end of the second TVS is connected with the negative input end of the silicon piezoresistive sensor core and is grounded, and the other end of the second TVS is connected with the lightning protection device shell;
the positive output end of the silicon piezoresistive sensor core body is connected with the non-inverting input end of a first operational amplifier, the inverting input end of the first operational amplifier is respectively connected with the output end of the first operational amplifier and one end of a third TVS and serves as the positive output end of the lightning protection circuit, and the other end of the third TVS is connected with the lightning protection device shell;
the negative output end of the silicon piezoresistive sensor core body is connected with the non-inverting input end of a second operational amplifier, the inverting input end of the second operational amplifier is respectively connected with the output end of the second operational amplifier and one end of a fourth TVS and serves as the negative output end of the lightning protection circuit, and the other end of the fourth TVS is connected with the lightning protection device shell;
the power supply end of the first operational amplifier is connected with a power supply VCC, the grounding end of the first operational amplifier is connected with the power supply end of the second operational amplifier, and the grounding end of the second operational amplifier is grounded.
4. The high temperature silicon piezoresistive sensor-based lightning protection device according to claim 3, wherein the lightning protection device housing is lightning protected to ground.
5. The high temperature silicon piezoresistive sensor-based lightning protection device according to claim 3, wherein the lightning protection device housing is of stainless steel construction.
6. The high temperature silicon piezoresistive sensor-based lightning protection device according to claim 3, wherein the model numbers of the first TVS, the second TVS, the third TVS, and the fourth TVS are set according to a lightning protection test rating of the lightning protection device, each lightning protection rating having a corresponding model number setting of the first TVS, the second TVS, the third TVS, and the fourth TVS.
7. The high temperature silicon piezoresistive sensor-based lightning protection device according to claim 6, wherein the first TVS, the second TVS, the third TVS, and the fourth TVS under the same lightning protection test rating are the same in model number.
8. The high temperature silicon piezoresistive sensor-based lightning protection device according to claim 6, wherein the lightning protection test rating is proportional to the power of the first TVS, the second TVS, the third TVS, and the fourth TVS.
9. The lightning protection method for the lightning protection device based on the high-temperature silicon piezoresistive sensor according to any one of claims 1 to 8, wherein when a lightning strike signal breaks down the first TVS device, the output performance of the silicon piezoresistive sensor is protected by the isolation between the second TVS device and the core body of the silicon piezoresistive sensor through the high-temperature operational amplifier, so as to realize lightning protection.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210228307.1A CN114336565B (en) | 2022-03-10 | 2022-03-10 | Lightning protection device based on high-temperature silicon piezoresistive sensor and lightning protection method thereof |
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| CN202210228307.1A CN114336565B (en) | 2022-03-10 | 2022-03-10 | Lightning protection device based on high-temperature silicon piezoresistive sensor and lightning protection method thereof |
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