CN114336077A - Polarization reconfigurable converter based on active super surface - Google Patents
Polarization reconfigurable converter based on active super surface Download PDFInfo
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- CN114336077A CN114336077A CN202210060113.5A CN202210060113A CN114336077A CN 114336077 A CN114336077 A CN 114336077A CN 202210060113 A CN202210060113 A CN 202210060113A CN 114336077 A CN114336077 A CN 114336077A
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Abstract
The invention provides a polarization reconfigurable converter based on an active super surface, wherein a polarization converter unit consists of a single super surface unit and a PIN diode, and each super surface unit consists of three layers of metal, three layers of medium and metalized through holes for connecting a top layer and a bottom layer. The polarization state of the reflected wave is controlled by controlling the peripheral voltage. The reflected wave may be a co-polarized wave or a cross-polarized wave. The converter can control the polarization of linear polarized wave and circular polarized wave. The working frequency range of the structure covers an X wave band, the relative bandwidth is wide, and meanwhile, the conversion efficiency is high within the whole bandwidth. The invention has simple design, small peripheral control voltage, simple control circuit, thin thickness and good universality, can be designed in different working frequency bands by adjusting the size structure, and is easy to popularize and apply. The method has potential application value in radar scattering cross section reduction and wireless communication.
Description
Technical Field
The invention belongs to the technical field of artificial electromagnetic materials, and particularly relates to a polarization reconfigurable converter based on an active super-surface.
Background
Under the informatization condition, the polarization of electromagnetic waves is an important research content of electromagnetic wave space propagation. In communication technology, different polarizations are utilized to have different propagation characteristics, and the polarization characteristics of a transmitting antenna and a receiving antenna are combined to realize optimal transmission and reception of electromagnetic waves. For example: the medium wave broadcasting adopts vertical polarization propagation, because of the characteristics of electric waves, if the horizontally polarized electric waves propagate, polarization current can be generated on the surface of the ground, the polarization current is influenced by the impedance of the ground, so that electric field signals are attenuated, and the vertical polarization mode is not easy to generate the polarization current; horizontal polarization is generally used for television, fm broadcast, and short-wave broadcast. Long-distance short wave broadcasting is an ionospheric reflection propagation mode. In the research of radar anti-interference, the interference of an enemy horizontal polarized wave can be suppressed through the antenna work of the vertical polarized wave. Polarization is important in electronic wars, so that the antenna is required to have co-polarization and cross-polarization reconstruction on linear polarization and circular polarization waves, generally, one pair of antennas only has one polarization, and a complex feed network is required for realizing polarization controllability of the antenna, so that a polarization converter is required to realize regulation and control on co-polarization and cross-polarization on both linear polarization waves and circular polarization waves. Therefore, the converter with controllable polarization has important new application in the fields of modern radar, communication, electronic reconnaissance and interference and the like.
Disclosure of Invention
The invention aims to provide a polarization reconfigurable converter based on an active super surface, which aims to realize the regulation and control of common polarization and cross polarization on linear polarized waves and circular polarized waves.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
an active-super-surface-based polarization reconfigurable converter includes a plurality of polarization converter cells;
the polarization converter unit comprises super surface units, and a PIN diode is added to each super surface unit;
the feeding of each column of the super-surface units is controlled by the same signal; the control signals of all the columns of the super-surface units are connected to one end of the whole super-surface unit array for centralized control.
Furthermore, each super-surface unit also comprises an upper-layer dielectric substrate, a lower-layer dielectric substrate, a layer of curing sheet, two metal feed through holes and three layers of metal;
the three layers of metal are respectively a metal patch on the top layer, a middle metal back plate and a feeder line layer on the bottom layer;
the metal patch of the top layer is arranged on the upper part of the upper-layer dielectric substrate;
the curing sheet is arranged between the upper medium substrate and the lower medium substrate and is used for bonding the upper medium substrate and the lower medium substrate together;
the middle metal back plate is arranged at the lower part of the upper-layer dielectric substrate;
the metal feed through hole penetrates through the upper dielectric substrate and the lower dielectric substrate and is connected with the metal patch on the top layer and the feeder layer on the bottom layer;
and each column of direct current feeders of the feeding line layer of the bottom layer is finally connected to a signal control board at one end of the array, and the on-off of the PIN diode is controlled by controlling peripheral voltage.
Furthermore, the connection part of the feeder line and the metal feed through hole is provided with two sectors, so that alternating current is inhibited from being transmitted to the direct current feeder line, and the influence of the feeder line on the metal patch on the top layer is reduced.
Furthermore, the on-off state of the PIN diode is changed, and the reflection phase difference of the u direction in the on-off state is changed while the amplitude total reflection of the u direction is kept; the size of the metal patch on the top layer is changed, so that the reflection phase difference in the u direction is 180 degrees under the two states of connection and disconnection of the PIN diode, meanwhile, the amplitude in the v direction is totally reflected, the phase is kept unchanged under the connection and disconnection states, the reconstruction of co-polarized waves and cross-polarized waves of reflected waves is achieved, the u direction is a direction rotating 45 degrees anticlockwise to the x axis, and the v direction is a direction rotating 45 degrees clockwise to the x axis.
Further, the PIN diode can be conducted when the PIN diode is conducted to 1v, and the small peripheral control voltage is obtained.
Furthermore, the upper dielectric substrate and the lower dielectric substrate are made of microwave composite material F4B.
The polarization reconfigurable converter based on the active super surface has the following advantages:
1. the invention has simple principle, and can real-timely regulate and control the polarization state of the reflected wave only by changing the peripheral control voltage. The invention uses a plurality of basic units to form an array, and the array is controlled by the same signal, thereby reducing the interference to the unit reflection coefficient caused by different boundaries, and simultaneously reducing the design complexity of a feed network.
2. The invention is based on the active super-surface technology, and compared with the traditional polarization converter, the invention has the advantages of simple structure, low section, reconfigurability, easy processing and wider relative bandwidth.
3. The structure is based on the active super-surface technology, and not only can the polarization reconstruction of linear polarized waves, but also the polarization reconstruction of circular polarized waves.
Drawings
FIG. 1(a) is a schematic view of a single unit top metal patch of the present invention;
FIG. 1(b) is a schematic diagram of a single-element bottom DC feed layer of the present invention;
FIG. 1(c) is an intermediate metal layer of the present invention;
FIG. 1(d) is a side view of a single cell of the present invention;
FIG. 2 shows the x, y, u, v coordinate system and the decomposition of the electric field u direction in both x and y directions;
FIG. 3(a) is a schematic diagram of an equivalent circuit of the SMV1320-040LF PIN diode of the present invention in an off state;
FIG. 3(b) is a schematic diagram of an equivalent circuit of the SMV1320-040LF PIN diode of the present invention in a conducting state;
FIG. 4(a) is a diagram showing the comparison of reflection amplitude and phase simulation under u and v polarized wave excitation when the PIN tube of the present invention is disconnected;
FIG. 4(b) is a comparison diagram of the reflection amplitude and phase simulation under u and v polarized wave excitation when the PIN tube of the present invention is conducted;
FIG. 5(a) is a comparison between simulation and actual measurement of the present invention in an off-state under x-polarized wave excitation;
FIG. 5(b) is a comparison between simulation and actual measurement of the present invention under the on-state of x-polarized wave excitation;
FIG. 5(c) is a comparison between simulation and actual measurement of the present invention in a disconnected state under left-handed circular polarized wave excitation;
FIG. 5(d) is a comparison between simulation and actual measurement of the present invention in a conducting state under left-handed circular polarized wave excitation;
fig. 6 is a schematic diagram of an active-super-surface-based polarization reconfigurable converter according to the present invention.
The notation in the figure is: 1. a PIN diode; 2. a metal feed through hole; 3. a feed line; 4. an upper dielectric substrate; 5. curing the sheet; 6. a lower dielectric substrate; 7. a middle metal back plate.
Detailed Description
For better understanding of the purpose, structure and function of the present invention, the active super-surface based polarization reconfigurable transducer of the present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 6, the present invention comprises a plurality of polarization converter cells, each comprising a super-surface cell, each super-surface cell being added with a PIN diode 1; the feeding of each column of the super-surface units is controlled by the same signal; the control signals of all the columns of the super-surface units are connected to one end of the whole super-surface unit array for centralized control.
Fig. 1 shows the basic structure of a single super-surface unit, and each super-surface unit further comprises an upper dielectric substrate 4, a lower dielectric substrate 6, a layer of solidified sheet 5, two metal feed through holes 2 and three layers of metals. The three layers of metal are respectively a metal patch on the top layer, a middle metal back plate 7 and a feeder line layer on the bottom layer; the metal patch of the top layer is arranged on the upper part of the upper-layer dielectric substrate 4; the curing sheet 5 is arranged between the upper medium substrate 4 and the lower medium substrate 6, and is used for bonding the upper medium substrate 4 and the lower medium substrate 6 together; the middle metal back plate 7 is arranged at the lower part of the upper-layer dielectric substrate 4; the metal feed through hole 2 penetrates through the upper dielectric substrate 4 and the lower dielectric substrate 6 and is connected with the metal patch on the top layer and the feed line layer on the bottom layer; each column of direct current feeders 3 of the feeding line layer of the bottom layer is finally connected to a signal control board at one end of the array, and the on-off of the PIN diode 1 is controlled by controlling peripheral voltage.
As shown in fig. 1(a), the PIN diode 1 is attached to the surface of the metal patch of the top layer, as shown in fig. 2, wherein the PIN diode 1 is oriented along the u direction, wherein the u direction is a direction rotated 45 ° counterclockwise from the x axis, and the v direction is a direction rotated 45 ° clockwise from the x axis. Thus, the on-off of the PIN diode 1 changes the equivalent circuit of the u direction of a single unit, and has no influence on the equivalent circuit of the v direction. By optimizing the size of the patch in the super-surface unit, the reflection amplitude of the patch is close to 1 when the patch is switched on and switched off, but the phase difference is about 180 degrees, and the PIN tube is perpendicular to the v direction, so that the on-off of the PIN tube has no influence on an equivalent circuit in the v direction of the super-surface unit. Fig. 4 shows the amplitude and phase response of the PIN tube under u-polarized wave excitation and v-polarized wave excitation in different states.
The metal patch on the top layer has the function of adjusting amplitude and phase of electromagnetic waves, and the middle metal back plate 7 serves as an alternating current ground to prevent the transmission of the electromagnetic waves. As shown in fig. 1(c), the middle metal back plate 7 is formed with two circular holes, as shown in fig. 1(d), the diameter of the two circular holes is larger than that of the metal feed through hole 2, so as to prevent the metal feed through hole 2 from contacting with the ground. As shown in fig. 1(b), the metal feed via 2 is used as a bottom layer dc feed line 3 bridging with the metal patch of the top layer. Two direct current feeder lines 3 on the bottom layer are used for feeding, two fan-shaped parts are arranged at the connection part of the feeder lines 3 and the metal feeding through hole 2, and the fan-shaped parts are used for inhibiting alternating current from being transmitted to the direct current feeder lines and reducing the influence of the feeder lines 3 on metal patches on the top layer.
The upper dielectric substrate (4) and the lower dielectric substrate (6) are made of microwave composite material F4B, and the dielectric constant is 2.4. The middle layer of the thin curing sheet 5 is used for bonding the upper and lower layers of media together, the thickness of the curing sheet is 0.16mm, and the dielectric constant of the curing sheet is 4.2. The size 17 x 3mm of each super-surface cell.
The control voltage of the invention is 1V. Since the PIN diode is in the on and off states, the equivalent circuit is different, as shown in fig. 3(a) and fig. 3 (b). When the circuit is switched on, an inductor is connected in series with a resistor, and when the circuit is switched off, the circuit is equivalent to an inductor connected in series with a resistor.
It can be seen from fig. 4(a) and 4(b) that the reflection amplitudes are both above-1 dB, indicating high reflection efficiency, and by comparing the reflection phases, it can be seen that the reflection phases in different states are different, and the phases in the two states are different by about 180 °, whereas for v-polarized wave excitation, the reflection amplitudes and phases are almost unchanged in the two states of on and off, and according to the electromagnetic field theory, when the PIN diode 1 is turned on, the reflected wave is still a co-polarized wave for x-polarized or y-polarized wave excitation, and is a cross-polarized wave reflection for one circular polarized wave excitation, and when the PIN diode is turned off, the reflected wave is still a cross-polarized wave for x-polarized or y-polarized wave excitation, and is a co-polarized wave reflection for one circular polarized wave excitation.
In order to verify the effectiveness of the design structure, the design structure is simulated in the electromagnetic simulation software CST and is actually measured in a microwave darkroom. Fig. 5(a), 5(b), 5(c) and 5(d) give comparative plots of simulation and actual measurement, R representing the inverse coefficient, where the first and second tables for R represent the incident and reflected wave polarizations, respectively. As can be seen from the figure, the simulation has quite high consistency with the actual measurement, and the invention covers the X wave band from the frequency range of 7.4-12 GHz. The conversion efficiency is within-1 dB. In addition, the linear polarization is consistent with the circular polarization simulation curve, so that the circular polarization simulation curve has a huge application value in communication and radar scattering cross sections.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (6)
1. An active-super-surface-based polarization reconfigurable converter is characterized by comprising a plurality of polarization converter units;
the polarization converter unit comprises super surface units, and a PIN diode (1) is added to each super surface unit;
the feeding of each column of the super-surface units is controlled by the same signal; the control signals of all the columns of the super-surface units are connected to one end of the whole super-surface unit array for centralized control.
2. The active-super-surface-based polarization reconfigurable converter according to claim 1, wherein each super-surface unit further comprises an upper dielectric substrate (4), a lower dielectric substrate (6), a layer of cured sheet (5), two metal feed through holes (2) and three layers of metal;
the three layers of metal are respectively a metal patch on the top layer, a middle metal back plate (7) and a feed line layer on the bottom layer;
the metal patch of the top layer is arranged on the upper part of the upper-layer dielectric substrate (4);
the curing sheet (5) is arranged between the upper-layer medium substrate (4) and the lower-layer medium substrate (6) and used for bonding the upper-layer medium substrate (4) and the lower-layer medium substrate (6) together;
the middle metal back plate (7) is arranged at the lower part of the upper-layer dielectric substrate (4);
the metal feed through hole (2) penetrates through the upper-layer dielectric substrate (4) and the lower-layer dielectric substrate (6) and is connected with the metal patch on the top layer and the feed line layer on the bottom layer;
each column of direct current feeder (3) of the feeder layer of the bottom layer is finally connected to a signal control board at one end of the array, and the on-off of the PIN diode (1) is controlled by controlling peripheral voltage.
3. The active-super-surface-based polarization reconfigurable converter according to claim 1, characterized in that the connection of the feeder line (3) and the metal feed through hole (2) has two sectors, which suppresses the transmission of alternating current to the direct current feeder line and reduces the influence of the feeder line (3) on the metal patch on the top layer.
4. The polarization reconfigurable converter based on the active super-surface according to claim 1, characterized in that the on and off states of the PIN diode (1) are changed, and the reflection phase difference of the u direction in the on and off states is changed while the total reflection of the amplitude of the u direction is maintained; the size of the metal patch on the top layer is changed, so that the reflection phase difference in the u direction is 180 degrees under the two states of connection and disconnection of the PIN diode (1), meanwhile, the amplitude in the v direction is totally reflected, the phase is kept unchanged under the connection and disconnection states, the reconstruction of common polarization waves and cross polarization waves of reflected waves is achieved, the u direction is a direction rotating 45 degrees anticlockwise to the x axis, and the v direction is a direction rotating 45 degrees clockwise to the x axis.
5. Active-super-surface based polarization reconfigurable converter according to claim 1, characterized in that the PIN diode (1) is conductive at 1v with a small peripheral control voltage.
6. The active-super-surface-based polarization reconfigurable converter according to claim 1, wherein the upper dielectric substrate (4) and the lower dielectric substrate (6) are made of microwave composite material F4B.
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| CN202210060113.5A CN114336077A (en) | 2022-01-19 | 2022-01-19 | Polarization reconfigurable converter based on active super surface |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115566435A (en) * | 2022-09-29 | 2023-01-03 | 重庆大学 | Transmission-reflection reconfigurable polarization conversion super surface based on PIN diode |
| CN116315711A (en) * | 2023-03-10 | 2023-06-23 | 重庆大学 | Broadband electronic control reconfigurable reflection super-surface unit and structure for circular polarization wavefront regulation and control |
| WO2024036455A1 (en) * | 2022-08-15 | 2024-02-22 | 北京小米移动软件有限公司 | Metasurface implementation method and apparatus based on liquid crystal regulation and control, and metasurface unit |
-
2022
- 2022-01-19 CN CN202210060113.5A patent/CN114336077A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024036455A1 (en) * | 2022-08-15 | 2024-02-22 | 北京小米移动软件有限公司 | Metasurface implementation method and apparatus based on liquid crystal regulation and control, and metasurface unit |
| CN115566435A (en) * | 2022-09-29 | 2023-01-03 | 重庆大学 | Transmission-reflection reconfigurable polarization conversion super surface based on PIN diode |
| CN115566435B (en) * | 2022-09-29 | 2024-03-22 | 重庆大学 | PIN diode-based transmission-reflection reconfigurable polarization conversion super-surface |
| CN116315711A (en) * | 2023-03-10 | 2023-06-23 | 重庆大学 | Broadband electronic control reconfigurable reflection super-surface unit and structure for circular polarization wavefront regulation and control |
| CN116315711B (en) * | 2023-03-10 | 2024-04-19 | 重庆大学 | Broadband electronic control reconfigurable circularly polarized reflective super-surface unit and structure |
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