CN114335368B

CN114335368B - Light-emitting device, manufacturing method thereof and display device

Info

Publication number: CN114335368B
Application number: CN202111602337.6A
Authority: CN
Inventors: 张晓远; 李广如; 卢志高
Original assignee: BOE Technology Group Co Ltd; Beijing BOE Technology Development Co Ltd
Current assignee: BOE Technology Group Co Ltd; Beijing BOE Technology Development Co Ltd
Priority date: 2021-12-24
Filing date: 2021-12-24
Publication date: 2024-04-19
Anticipated expiration: 2041-12-24
Also published as: CN114335368A

Abstract

The application provides a light-emitting device, a manufacturing method thereof and a display device. By arranging the second electrode layer into a plurality of sub-electrode blocks which are arranged at intervals, part of light rays emitted by the light emitting functional layer are reflected by the second electrode layer, then are emitted after being reflected for a plurality of times in an optical resonant cavity formed by the second electrode layer and the first electrode layer, and the other part of light rays (in an area which is not blocked by the second electrode layer) are directly emitted by the light emitting functional layer.

Description

Light-emitting device, manufacturing method thereof and display device

Technical Field

The application relates to the technical field of display, in particular to a light emitting device, a manufacturing method thereof and a display device.

Background

The quantum dot electroluminescent diode (QLED) has advantages of active light emission, adjustable emission spectrum, narrow emission wavelength range, etc., and along with the development of technology, the QLED technology is increasingly widely applied to display devices. According to the emergent mode of light, the QLED light-emitting device can be divided into a bottom emission type and a top emission type, the light-emitting efficiency of the bottom emission type device is limited by the aperture ratio of pixels, a light source is difficult to effectively utilize, the OLED light-emitting device must operate in a high-brightness state to achieve the required brightness, the light-emitting efficiency is low, the service life is short, and the aperture ratio of the top emission type device structure is improved due to the fact that the influence of a substrate bottom circuit is avoided, and the light-emitting efficiency and the service life are both improved.

However, the conventional top emission type QLED light emitting device has a problem that the spectrum of emitted light is red-shifted or blue-shifted, which affects the display effect.

Disclosure of Invention

Aiming at the defects of the prior art, the application provides a light-emitting device, a manufacturing method thereof and a display device, which are used for solving the problem that the spectrum of emitted light of the QLED light-emitting device in the prior art is subjected to red shift or blue shift.

In a first aspect, an embodiment of the present application provides a light emitting device including:

A substrate;

The light-emitting functional layer is arranged on one side of the substrate and comprises a plurality of sub-pixel units arranged at intervals;

A first electrode layer and a second electrode layer disposed on opposite sides of the light emitting functional layer, the first electrode layer and the second electrode layer being configured to apply a voltage to the light emitting functional layer;

the second electrode layer comprises at least one connecting block and a plurality of sub-electrode blocks which are arranged at intervals, and the orthographic projection of each sub-electrode block on the substrate is not overlapped; at least part of the sub-electrode blocks are connected to the same connecting block, and the aperture ratio of the second electrode layer is 5% to 95% in each sub-pixel unit.

Optionally, the first electrode layer is located at a side of the light-emitting functional layer close to the substrate, and the second electrode layer is located at a side of the light-emitting functional layer far away from the substrate; or alternatively

The first electrode layer is positioned on one side of the light-emitting functional layer, which is far away from the substrate, and the second electrode layer is positioned on one side of the light-emitting functional layer, which is close to the substrate.

Optionally, in the row direction, the pitches between adjacent sub-electrode blocks are equal; and/or, in the column direction, the pitches between adjacent sub-electrode blocks are equal.

Optionally, the front projection shapes of the plurality of sub-electrode blocks on the substrate are the same.

Optionally, the shape of the sub-electrode block includes rectangle, square, circle, triangle, trapezoid or sector.

Optionally, in the row direction, the widths of the sub-electrode blocks are equal; and/or, in the column direction, the widths of the sub-electrode blocks are equal.

Optionally, in the row direction, the width of the sub-electrode block is greater than or equal to 1 micron and less than or equal to 1 millimeter; and/or, in the column direction, the width of the sub-electrode block is greater than or equal to 1 micron and less than or equal to 1 millimeter.

Optionally, an auxiliary contact layer is arranged between the second electrode layer and the light-emitting functional layer, and the auxiliary contact layer is respectively connected with the second electrode layer and the light-emitting functional layer;

The orthographic projection of the auxiliary contact layer on the substrate overlaps with the orthographic projection of the second electrode layer on the substrate, and the orthographic projection of the auxiliary contact layer on the substrate overlaps with the orthographic projection of the light-emitting functional layer on the substrate.

Optionally, the light transmittance of the auxiliary contact layer is greater than or equal to 85%.

Optionally, along the direction from the substrate to the second electrode layer, the light-emitting functional layer includes an electron transport layer, a quantum dot layer, an interface dipole layer, a hole transport layer and a hole injection layer that are sequentially stacked; or the light-emitting functional layer comprises a hole injection layer, a hole transport layer, a quantum dot layer and an electron transport layer which are sequentially stacked.

Optionally, the thickness of the second electrode layer is greater than or equal to 10 nm and less than or equal to 25 nm in a direction in which the substrate points to the light emitting functional layer.

In a second aspect, an embodiment of the present application provides a display apparatus including the light emitting device in the embodiment of the present application.

In a third aspect, an embodiment of the present application provides a method for manufacturing a light emitting device, including:

Providing a substrate;

Manufacturing a light-emitting functional layer, a first electrode layer and a second electrode layer on one side of the substrate, wherein the light-emitting functional layer comprises a plurality of sub-pixel units arranged at intervals, the first electrode layer and the second electrode layer are arranged on the opposite side of the light-emitting functional layer and used for applying voltage to the light-emitting functional layer, and the second electrode layer comprises at least one connecting block and a plurality of sub-electrode blocks arranged at intervals, and orthographic projections of the sub-electrode blocks on the substrate are not overlapped; at least part of the sub-electrode blocks are connected to the same connecting block, and the aperture ratio of the second electrode layer is 5% to 95% in each sub-pixel unit.

Optionally, the fabricating a light emitting functional layer, a first electrode layer, and a second electrode layer on one side of the substrate includes:

Sequentially manufacturing a first electrode layer and a light-emitting functional layer on one side of the substrate, and manufacturing a second electrode layer on one side, far away from the substrate, of the light-emitting functional layer through a patterning process; or alternatively

And manufacturing a second electrode layer on one side of the substrate through a patterning process, and sequentially manufacturing a light-emitting functional layer and a first electrode layer on one side of the second electrode layer far away from the substrate.

Optionally, the method further comprises: and manufacturing an auxiliary contact layer between the light-emitting functional layer and the second electrode layer, wherein the orthographic projection of the auxiliary contact layer on the substrate is overlapped with the orthographic projection of the second electrode layer on the substrate, and the orthographic projection of the auxiliary contact layer on the substrate is overlapped with the orthographic projection of the light-emitting functional layer on the substrate.

The technical scheme provided by the embodiment of the application has the beneficial technical effects that:

The light-emitting device comprises a light-emitting functional layer, a first electrode layer and a second electrode layer, wherein the first electrode layer and the second electrode layer are arranged on opposite sides of the light-emitting functional layer, the second electrode layer comprises at least one connecting block and a plurality of sub-electrode blocks which are arranged at intervals, and orthographic projections of the sub-electrode blocks on a substrate are not overlapped; at least part of the sub-electrode blocks are connected to the same connection block, and the aperture ratio of the second electrode layer is 5% to 95% in each sub-pixel unit. By arranging the second electrode layer into a plurality of sub-electrode blocks which are arranged at intervals, part of light rays emitted by the light emitting functional layer are reflected by the second electrode layer, then are emitted after being reflected for a plurality of times in an optical resonant cavity formed by the second electrode layer and the first electrode layer, and the other part of light rays (in an area which is not blocked by the second electrode layer) are directly emitted by the light emitting functional layer.

Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.

Drawings

The foregoing and/or additional aspects and advantages of the application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:

Fig. 1 is a schematic view of a structure of a light emitting device in the prior art;

fig. 2 is a schematic structural diagram of a light emitting device according to an embodiment of the present application;

fig. 3 is a schematic structural view of another light emitting device according to an embodiment of the present application;

fig. 4 is a schematic structural view of another light emitting device according to an embodiment of the present application;

fig. 5a to 5c are schematic top views of second electrode layers with different shapes at sub-pixel units according to embodiments of the present application;

FIG. 6 is a schematic diagram of an optical path of a light emitting device according to an embodiment of the present application;

fig. 7a to 7h are schematic top views of second electrode layers with different shapes according to embodiments of the present application;

Fig. 8 is a schematic diagram of materials and energy levels of each film layer of a light emitting device according to an embodiment of the present application;

FIG. 9 is a schematic diagram of materials and energy levels of film layers of another light emitting device according to an embodiment of the present application;

Fig. 10 is a schematic diagram of a manufacturing process of a light emitting device according to an embodiment of the present application;

Fig. 11a to 11i are schematic structural views illustrating different processes for manufacturing a light emitting device according to an embodiment of the present application;

Fig. 12a to 12k are schematic structural views illustrating another different process for manufacturing a light emitting device according to an embodiment of the present application.

In the figure:

10-a light emitting device; 11-a substrate; a 110-thin film transistor; 12-a light-emitting functional layer; 120-subpixel units; 111-pixel banks;

13-a first electrode layer; 14-a second electrode layer; 140-sub-electrode blocks; 141-connecting blocks; 142-connecting lines;

15-an auxiliary contact layer; 16-a protective layer and a light extraction layer;

121-a hole injection layer; 122-hole transport layer; 123-quantum dot layer; 124-an electron transport layer; 125-interfacial dipole layer;

A 23-total reflection layer; 24-semi-transparent semi-reflective layer.

Detailed Description

The present application is described in detail below, examples of embodiments of the application are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar components or components having the same or similar functions throughout. Further, if detailed description of the known technology is not necessary for the illustrated features of the present application, it will be omitted. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.

It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein includes all or any element and all group of one or more associated listed items.

Referring to fig. 1, the inventors of the present application consider that, for an Organic-Light-emittingDiode (OLED) Light-emitting device or a QLED Light-emitting device, when the Light-emitting functional layer is located between the total-reflection layer 23 and the half-reflection layer 24, the Light-emitting functional layer 12, the total-reflection layer 23 and the half-reflection layer 24 constitute one optical resonant cavity. Due to the reflection of the light by the total reflection layer 23 and the semi-transparent and semi-reflective layer 24, the light emitted by the light emitting functional layer 12 is emitted from the semi-transparent and semi-reflective layer 24 after being reflected for multiple times in the optical resonant cavity, and the front emission of the light with a specific wavelength can be enhanced by adjusting the length of the cavity, so that the light emitting efficiency is improved, and the enhancement of the emergent light by the optical resonant cavity is called as microcavity effect. However, when the viewing angle of a person changes, the composition of the light in the outgoing light received by the human eye changes (for example, red light increases and blue light decreases, or red light decreases and blue light increases), that is, the spectrum of the outgoing light changes red or blue.

The application provides a light-emitting device, a manufacturing method thereof and a display device, and aims to solve the technical problems in the prior art.

The following describes in detail a light emitting device, a manufacturing method thereof, and a display device according to an embodiment of the present application with reference to the accompanying drawings.

As shown in fig. 2,3, 4 and 5a, the light emitting device 10 in the embodiment of the present application includes:

A substrate 11;

A light emitting functional layer 12 disposed on one side of the substrate 11 and including a plurality of sub-pixel units 120 disposed at intervals;

a first electrode layer 13 and a second electrode layer 14 provided on opposite sides of the light emitting functional layer 12, the first electrode layer 13 and the second electrode layer 14 for applying a voltage to the light emitting functional layer 12;

The second electrode layer 14 includes at least one connection block 141 and a plurality of sub-electrode blocks 140 disposed at intervals, and orthographic projections of each sub-electrode block 140 on the substrate 11 are not overlapped; at least a part of the sub-electrode blocks 140 are connected to the same connection block 141, and the aperture ratio of the second electrode layer 14 is 5% to 95% in each sub-pixel unit 120.

Specifically, the substrate 11 is provided with a plurality of thin film transistors 110 and a driver circuit (not shown). The first electrode layer 13 and the second electrode layer 14 are disposed on opposite sides of the light emitting function layer 12, and the first electrode layer 13 and the second electrode layer 14 are used to apply a voltage to the light emitting function layer 12 to cause the light emitting function layer 12 to emit light. The material of the first electrode layer 13 includes a metal or a metal oxide, and the transmittance and reflectance of the first electrode layer 13 are made smaller by adjusting the thickness or the composition of the material even if the first electrode layer 13 is an opaque film layer. The material of the second electrode layer 14 includes a metal or metal oxide, specifically includes one or more of silver, aluminum, magnesium, lead, germanium, indium, gallium, nickel, titanium, chromium, and other metal materials, or one or more of indium zinc oxide, indium gallium zinc oxide, zinc tin oxide, and other metal oxides. By adjusting the thickness or the composition of the material of the second electrode layer 14, the reflectance and transmittance of the second electrode layer 14 are balanced even if the second electrode layer 14 is a semi-reflective and semi-transparent film. The thickness of the second electrode layer 14 (thickness in the direction perpendicular to the substrate 11) may be 10 nm to 25 nm, and may be specifically adjusted according to practical situations.

In an embodiment of the present application, as shown in connection with fig. 2 to 5a, the light emitting device 10 includes a plurality of pixel banks 111, and the plurality of pixel banks 111 divide the light emitting function layer 12 into a plurality of sub-pixel units 120 arranged at intervals. It should be noted that, the plurality of sub-electrode blocks 140 in the second electrode layer 14 may correspond to the plurality of sub-pixel units 120 one by one, that is, each sub-pixel unit 120 may correspond to one sub-electrode block 140, or may correspond to a plurality of sub-electrode blocks 140. Optionally, as shown in fig. 2 and fig. 5a, in the plurality of sub-pixel units 120, each sub-pixel unit 120 corresponds to a plurality of sub-electrode blocks 140, so that a plurality of areas, which are covered by the sub-electrode blocks 140, and areas, which are not covered by the sub-electrode blocks 140, on each sub-pixel unit 120 are arranged at intervals, which is beneficial to making the light output of the sub-pixel unit 120 more uniform and improving the light output effect of the light emitting device 10.

The aperture ratio of the second electrode layer 14 is 5% to 95% at the position corresponding to each sub-pixel unit 120, that is, the area of the sub-electrode block 140 is greater than or equal to 5% and less than or equal to 95% of the area of the sub-pixel unit 120 at the position corresponding to each sub-pixel unit 120. The ratio of the area of the sub-electrode block 140 to the area of the sub-pixel unit 120 affects the light emitting effect of the light emitting device 10. The larger the ratio of the area of the sub-electrode block 140 to the area of the sub-pixel unit 120, the more the sub-electrode block 140 shields the sub-pixel unit 120, the more the portion of the light emitted by the sub-pixel unit 120 after multiple reflection is emitted, i.e. the more the portion of the light enhanced by the optical resonant cavity is obtained, and the more the corresponding spectrum of the emitted light is prone to generate a red shift or blue shift phenomenon. The smaller the ratio of the area of the sub-electrode block 140 to the area of the sub-pixel unit 120, the less the sub-electrode block 140 shields the sub-pixel unit 120, and the more the portion of the light emitted from the sub-pixel unit 120 that directly exits without being reflected by the second electrode layer 14. Thus, controlling the ratio of the area of the sub-electrode block 140 to the area of the sub-pixel unit 120 within a suitable range can balance the advantages and disadvantages of enhancing the front emission of light of a specific wavelength and improving the red-shift or blue-shift of the emitted light, i.e. balancing microcavity effects.

Further, at a position corresponding to the position of each sub-pixel unit 120, the area of the sub-electrode block 140 is made to be greater than or equal to 7% of the area of the sub-pixel unit 120 and less than or equal to 60% of the area of the sub-pixel unit 120. Therefore, the emergent light of specific wavelength can be enhanced, and the red shift or blue shift of the spectrum of the emergent light caused by the microcavity effect can be improved.

As shown in fig. 2 and 5a, during the fabrication of the light emitting device 10, the second electrode layer 14 may be patterned to form a plurality of discrete and independent patterns, i.e., the second electrode layer 14 includes a plurality of sub-electrode blocks 140 disposed at intervals. At least some of the sub-electrode blocks 140 are connected to the same connection block 141 through connection lines 142 and then to a driving circuit (not shown in fig. 5 a), so that the interconnected sub-electrode blocks 140 can receive the same electrical signal so that voltages on the interconnected sub-electrode blocks 140 are the same.

As shown in fig. 2 and 6, by arranging the second electrode layer 14 into a plurality of sub-electrode blocks 140 arranged at intervals, a part of the light emitted by the light emitting functional layer 12 is reflected by the second electrode layer 14, and then is emitted after being reflected for a plurality of times in the optical resonant cavity formed by the second electrode layer 14 and the first electrode layer 13, and another part of the light (in the area which is not blocked by the second electrode layer 14) is directly emitted by the light emitting functional layer 12, when the viewing angle of a person changes, the human eye can receive the light which is directly emitted without being reflected by the optical resonant cavity, and the component of the part of the light does not change along with the change of the viewing angle, so that the phenomenon that the spectrum of the emitted light has red shift or blue shift can be improved. On the other hand, although the optical resonance formed by the first electrode layer 13 and the second electrode layer 14 is strong, the front emission of light with a specific wavelength can be enhanced, but the second electrode layer 14 also absorbs light to a certain extent, the second electrode layer 14 weakens the emission of light to a certain extent, and by arranging the second electrode layer 14 into a plurality of sub-electrode blocks 140 arranged at intervals, part of light emitted by the light emitting function layer 12 can be directly emitted, so that the weakening effect of the second electrode layer 14 on the emitted light is improved, and the light emitting efficiency of the light emitting device 10 is further improved.

As shown in fig. 2 and 3, when the first electrode layer 13 is located on a side of the light-emitting functional layer 12 close to the substrate 11, the second electrode layer 14 is located on a side of the light-emitting functional layer 12 far from the substrate 11, and light emitted from the light-emitting functional layer 12 is emitted through the top of the substrate 11, the light-emitting device 10 is a top-emission device. The positions of the first electrode layer 13 and the second electrode layer 14 may also be interchanged, as shown in fig. 4, where the first electrode layer 13 is located on a side of the light emitting function layer 12 away from the substrate 11, and the second electrode layer 14 is located on a side of the light emitting function layer 12 close to the substrate 11, where light emitted by the light emitting function layer 12 is emitted through the bottom of the substrate 11, and the light emitting device 10 is a bottom emission device. The specific positions of the first electrode layer 13 and the second electrode layer 14 may be adjusted according to actual situations, and are not limited herein, specifically, the first electrode layer 13 may be an anode, the second electrode layer 14 may be a cathode, the first electrode layer 13 may be a cathode, and the second electrode layer 14 may be an anode.

In the embodiment of the present application, the distance between the sub-electrode blocks 140 may be adjusted according to the actual situation, and optionally, the spacing between the adjacent sub-electrode blocks 140 is equal in the row direction (i.e., the horizontal direction); and/or, the pitches between adjacent sub-electrode blocks 140 are equal in the column direction (i.e., the vertical direction). That is, in the row arrangement direction of the sub-pixel units 120, the plurality of sub-electrode blocks 140 are uniformly distributed, and the distances between two adjacent sub-electrode blocks 140 are equal; or in the column arrangement direction of the sub-pixel units 120, the plurality of sub-electrode blocks 140 are uniformly distributed, and the distances between two adjacent sub-electrode blocks 140 are equal; or in the row direction and the column direction, the plurality of sub-electrode blocks 140 are uniformly arranged, and the distances between two adjacent sub-electrode blocks 140 are equal. Therefore, when the second electrode layer 14 is patterned to form the plurality of sub-electrode blocks 140, it is easier in process and the light emitting of the light emitting device 10 is more uniform.

As shown in fig. 7a to 7g, the shape of the sub-electrode block 140 may be rectangular, square, circular, triangular, trapezoidal, fan-shaped, circular arc-shaped, etc., and the shapes of the plurality of sub-electrode blocks 140 may be the same or different. Alternatively, the front projection shape of the plurality of sub-electrode blocks 140 on the substrate 11 is the same, whereby the manufacturing process of the second electrode layer 14 can be simplified and the light emission of the light emitting device 10 can be made more uniform. The size of the sub-electrode block 140 can be adjusted according to the actual situation, and if the size of the sub-pixel unit 120 is larger, the size of the sub-electrode block 140 is correspondingly larger. As shown in connection with fig. 5b and 7g, each sub-pixel unit 120 corresponds to one sub-electrode block 140. When the size of the sub-pixel unit 120 is 106 micrometers by 317.5 micrometers (317.5 micrometers long and 106 micrometers wide), the sub-electrode blocks may be set to be 50 micrometers by 50 micrometers square, the sub-electrode blocks 140 corresponding to different sub-pixel units 120 may be connected to an external driving circuit through connection lines having a width of 2 micrometers, and the aperture ratio of the second electrode layer 14 is about 7.4%. As shown in connection with fig. 5c and 7h, each sub-pixel unit 120 corresponds to one sub-electrode block 140. When the size of the sub-pixel unit 120 is 106 micrometers by 317.5 micrometers (317.5 micrometers long, 106 micrometers wide), the sub-electrode block may be set to a rectangle of 100 micrometers by 200 micrometers, and the aperture ratio of the second electrode layer 14 is about 59.4%.

As shown in connection with fig. 2 and 5a, alternatively, the widths W of the respective sub-electrode blocks 140 are equal in the row direction; and/or, the widths W of the respective sub-electrode blocks 140 are equal in the column direction, whereby the manufacturing process of the second electrode layer 14 can be simplified, and the light emitting uniformity of the light emitting device 10 can be improved. In the row direction, the width W of the sub-electrode block 140 is greater than or equal to 1 micron and less than or equal to 1 millimeter; and/or, in the column direction, the width W of the sub-electrode block 140 is greater than or equal to 1 micrometer and less than or equal to 1 millimeter. The specific dimensions of the sub-electrode block 140 may be adjusted according to practical situations, but it is necessary to ensure that the ratio of the area of the sub-electrode block 140 to the area of the sub-pixel power supply is within a reasonable range to achieve a balance between enhancing the front emission of light of a specific wavelength and improving the red or blue shift of the emitted light.

As shown in fig. 2, in an alternative embodiment of the present application, an auxiliary contact layer 15 is disposed between the second electrode layer 14 and the light-emitting functional layer 12, the auxiliary contact layer 15 is electrically connected to the second electrode layer 14 and the light-emitting functional layer 12, respectively, and the front projection of the auxiliary contact layer 15 on the substrate 11 overlaps with the front projection of the second electrode layer 14 on the substrate 11, and the front projection of the auxiliary contact layer 15 on the substrate 11 overlaps with the front projection of the light-emitting functional layer 12 on the substrate 11. The auxiliary contact layer is made of a material with low resistivity so as to form good ohmic contact with the second electrode layer 14 and the light-emitting functional layer, respectively. By providing the auxiliary contact layer 15 between the second electrode layer 14 and the light emitting function layer 12, current unevenness due to discrete contact between the second electrode layer 14 and the light emitting function layer 12 due to patterning of the second electrode layer 14 can be improved, and the light emitting effect of the light emitting device 10 can be ensured. The material of the auxiliary contact layer 15 includes one or more of gallium, gallium phosphide, gallium arsenide, graphene, lanthanum nickelate, indium tin oxide, indium oxide, tin oxide, aluminum zinc oxide, and indium yttrium oxide, which can be specifically determined according to practical situations. The light transmittance of the auxiliary contact layer 15 may be changed by adjusting the thickness of the auxiliary contact layer 15 and the material composition. Optionally, the light transmittance of the auxiliary contact layer 15 is greater than or equal to 85%, so that the absorption of the light emitted by the light-emitting functional layer 12 by the auxiliary contact layer 15 can be reduced, and the light-emitting effect of the light-emitting device 10 is ensured.

It should be noted that the specific structure of the light emitting functional layer 12 may be determined according to the actual situation. As shown in fig. 2, in a specific embodiment of the present application, the light emitting functional layer 12 includes a hole injection layer 121, a hole transport layer 122, a quantum dot layer 123, and an electron transport layer 124, which are sequentially stacked along the direction of the substrate 11 toward the second electrode layer 14 (first direction in fig. 2), and the materials and energy levels of the respective layers may be as shown in fig. 8. As shown in fig. 3, in another embodiment of the present application, the light emitting functional layer 12 includes an electron transport layer 124, a quantum dot layer 123, an interfacial dipole layer 125, a hole transport layer 122, and a hole injection layer 121, which are sequentially stacked along the direction of the substrate 11 toward the second electrode layer 14 (first direction in fig. 3), and materials and energy levels of the respective layers may be as shown in fig. 9. When the hollow transport layer 122 is disposed above the quantum dot layer 123 in the light-emitting functional layer 12 (the quantum dot layer 123 is fabricated first in fabricating the light-emitting functional layer 12, and then the hole transport layer 122 is fabricated on the quantum dot layer 123), by disposing the interfacial dipole layer 125 between the quantum dot layer 123 and the hole transport layer 122, the hydrophilic-hydrophobic property of the surface of the quantum dot layer 123 can be changed, and the damage to the quantum dot layer 123 caused by the material solvent of the space transport layer 122 in the subsequent fabrication of the hole transport layer 122 can be prevented. The material of the interfacial dipole layer 125 includes an organic material such as polyethylenimine.

Based on the same inventive concept, the embodiment of the present application also provides a display apparatus, which includes the light emitting device 10 provided in the embodiment of the present application. Since the display device includes the light emitting device 10 provided in the embodiment of the present application, the display device has the same beneficial effects as the light emitting device 10, and will not be described here again.

Based on the same inventive concept, an embodiment of the present application further provides a method for manufacturing a light emitting device 10, as shown in fig. 10, including:

S101, providing a substrate;

S102, manufacturing a luminous functional layer, a first electrode layer and a second electrode layer on one side of a substrate, wherein the luminous functional layer comprises a plurality of sub-pixel units which are arranged at intervals, the first electrode layer and the second electrode layer are arranged on the opposite side of the luminous functional layer and are used for applying voltage to the luminous functional layer, the second electrode layer comprises at least one connecting block and a plurality of sub-electrode blocks which are arranged at intervals, and the orthographic projections of the sub-electrode blocks on the substrate are not overlapped; at least part of the sub-electrode blocks are connected to the same connection block, and the aperture ratio of the second electrode layer is 5% to 95% in each sub-pixel unit.

In the manufacturing method of the embodiment of the application, the second electrode layer 14 is manufactured into the plurality of sub-electrode blocks 140 which are arranged at intervals, part of the light emitted by the light emitting functional layer 12 is reflected by the second electrode layer 14, then is emitted after being reflected for a plurality of times in the optical resonant cavity formed by the second electrode layer 14 and the first electrode layer 13, and the other part of the light (in the area which is not blocked by the second electrode layer 14) is directly emitted by the light emitting functional layer 12, when the visual angle of a person changes, the human eye can receive the light which is directly emitted without being reflected by the optical resonant cavity, and the component of the part of the light does not change along with the change of the visual angle, so that the phenomenon of red shift or blue shift of the spectrum of the emitted light can be improved.

In a specific embodiment, in the embodiment of the present application, the light emitting functional layer 12, the first electrode layer 13 and the second electrode layer 14 are fabricated on one side of the substrate 11, and include:

Sequentially manufacturing a first electrode layer 13 and a light-emitting functional layer on one side of a substrate, and manufacturing a second electrode layer on one side of the light-emitting functional layer far away from the substrate through a patterning process; or alternatively

And a second electrode layer is manufactured on one side of the substrate through a patterning process, and a light-emitting functional layer and a first electrode layer are sequentially manufactured on one side of the second electrode layer away from the substrate 11.

In another specific embodiment, the manufacturing method of the present application further comprises: and manufacturing an auxiliary contact layer between the light-emitting functional layer and the second electrode layer, wherein the orthographic projection of the auxiliary contact layer on the substrate overlaps with the orthographic projection of the second electrode layer on the substrate, and the orthographic projection of the auxiliary contact layer on the substrate overlaps with the orthographic projection of the light-emitting functional layer on the substrate.

A specific process of manufacturing the light emitting device 10 according to the first embodiment will be described in detail with reference to the accompanying drawings.

Specifically, the patterning process in the embodiment of the application comprises the processes of coating, exposing, developing, etching and removing part or all of the photoresist.

As shown in fig. 11a, first, a substrate 11 is provided. The substrate 11 includes a thin film transistor 110 and associated driving circuitry (not shown) disposed on the substrate 11. The substrate 11 was then washed with water, ethanol and acetone, and the washed substrate 11 was treated with ultraviolet ozone for 10 minutes to remove impurities from the surface of the substrate 11.

As shown in fig. 11b, next, a first electrode layer 13 is formed on one side of the substrate 11, and the first electrode layer 13 may be a three-layer composite structure formed of ITO, silver, and ITO, wherein the silver plays a role of reflecting light, and the ITO plays a role of conducting electricity. The first electrode layer 13 may be formed by physical vapor deposition.

As shown in fig. 11c, a plurality of pixel banks 111 are formed at intervals on one side of the substrate 11 by patterning, and a region between two adjacent pixel banks 111 is a region where the sub-pixel unit 120 is formed, i.e., a pixel pit.

As shown in fig. 11d, next, an ethylsulfide solution containing cuprous thiocyanate was spin-coated at a speed of 3000 rpm on the side of the first electrode layer 13 away from the substrate 11, followed by annealing at 135 ℃ for 20 minutes, and then the substrate 11 was transferred into a glove box to continue annealing for 5 minutes, to form a hole injection layer 121 of cuprous thiocyanate. The material and the manufacturing process parameters of the hole injection layer 121 may be adjusted according to practical situations, and are not limited herein.

As shown in fig. 11e, a solution of polytrianiline having a content of 8 mg/ml was then spin-coated on the side of the hole injection layer 121 remote from the substrate 11, and annealed at 135 c for 20 minutes to form a hole transport layer 122. The material and manufacturing process parameters of the hole transport layer 122 can be adjusted according to practical situations.

As shown in fig. 11f, next, a quantum dot solution of 10 mg/ml was spin-coated on the side of the hole transport layer 122 remote from the substrate 11, followed by annealing at 120 ℃ for 10 minutes to form a quantum dot layer 123. The content of the quantum dot solution, the spin-coating parameters of the quantum dot solution and the annealing parameters can be adjusted according to actual conditions.

As shown in fig. 11g, next, a 30 mg/ml zinc oxide nanoparticle solution was spin-coated on the side of the quantum dot layer 123 remote from the substrate 11, followed by annealing at 120 ℃ for 10 minutes to form an electron transport layer 124. The spin-coating parameters of the electron transport layer 124 and the parameters associated with the annealing process may be adjusted according to practical situations.

As shown in fig. 11h, next, transparent graphene of about 2 nm is deposited by chemical vapor deposition on the side of the quantum dot layer 123 away from the substrate 11 to form the auxiliary contact layer 15.

As shown in fig. 11i, next, the second electrode layer 14 is formed on the side of the auxiliary contact layer 15 away from the substrate 11, specifically, the substrate 11 is transferred to a vacuum evaporator to evaporate a layer of aluminum, and then the aluminum layer is subjected to patterning treatment to form the second electrode layer 14 including a plurality of sub-electrode blocks 140, so as to complete the fabrication of the light emitting device 10. The material of the second electrode layer 14 may be adjusted according to practical situations, and is not limited herein. Finally, the light emitting device 10 is packaged.

A specific process of manufacturing the light emitting device 10 according to the second embodiment will be described in detail with reference to the accompanying drawings.

As shown in fig. 12a, first, a substrate 11 is provided. The substrate 11 includes a thin film transistor 110 and associated driving circuitry (not shown) disposed on the substrate 11. The substrate 11 was then washed with water, ethanol and acetone, and the substrate 11 was treated with ultraviolet ozone for 10 minutes to remove impurities from the surface of the substrate 11.

As shown in fig. 12b, next, a first electrode layer 13 is formed on one side of the substrate 11, and the first electrode layer 13 may be a three-layer composite structure formed of ITO, silver, and ITO, wherein the silver plays a role of reflecting light, and the ITO plays a role of conducting electricity. The first electrode layer 13 may be formed by physical vapor deposition.

As shown in fig. 12c, a plurality of pixel banks 111 are formed at intervals on one side of the substrate 11 by patterning, and a region between two adjacent pixel banks 111 is a region where the sub-pixel unit 120 is formed, i.e., a pixel pit.

As shown in fig. 12d, next, a 30 mg/ml zinc oxide nanoparticle solution was spin-coated on the side of the first electrode layer 13 remote from the substrate 11, followed by annealing at 120 ℃ for 10 minutes to form an electron transport layer 124. The spin-coating parameters of the electron transport layer 124 and the parameters associated with the annealing process may be adjusted according to practical situations.

As shown in fig. 12e, next, a quantum dot solution of 10 mg/ml was spin-coated on the side of the electron transport layer 124 remote from the substrate 11, followed by annealing at 120 ℃ for 10 minutes to form a quantum dot layer 123. The content of the quantum dot solution, the spin-coating parameters of the quantum dot solution and the annealing parameters can be adjusted according to actual conditions.

As shown in fig. 12f, next, a solution of ethylene glycol monomethyl ether containing polyethylenimine, the content of which is 5%, was deposited on the side of the quantum dot layer 123 remote from the substrate 11, followed by annealing at 120 ℃ for 10 minutes to form an interfacial dipole layer 125. The interfacial dipole layer 125 can change the hydrophilic-hydrophobic properties of the quantum dot surface, and prevent the material solvent of the space transport layer 122 in the hole transport layer from damaging the quantum dot layer 123 in the subsequent fabrication.

Next, as shown in fig. 12g, a chlorobenzene solution containing polyvinylcarbazole was deposited on the side of the interfacial dipole layer 125 remote from the substrate 11, the polyvinylcarbazole content of the chlorobenzene solution being 8 milligrams per milliliter. And then annealed at 135 c for 20 minutes to form the hole transport layer 122.

As shown in fig. 12h, next, an ethanol solution containing nickel oxide in an amount of 15 mg/ml was deposited on the side of the hole transport layer 122 remote from the substrate 11, followed by annealing at 120 ℃ for 10 minutes to form a hole injection layer 121.

As shown in fig. 12i, next, lanthanum nickelate is deposited on the side of the hole injection layer 121 remote from the substrate 11 to form the auxiliary contact layer 15.

As shown in fig. 12j, next, the second electrode layer 14 is fabricated by patterning process on the side of the auxiliary contact layer 15 remote from the substrate 11. Specifically, a metal layer is formed through an evaporation process, and then the metal layer is subjected to a patterning process to form the second electrode layer 14 including the plurality of sub-electrode blocks 140. The material of the second electrode layer 14 includes magnesium, aluminum or silver, and the specific material and thickness thereof may be adjusted according to practical situations.

As shown in fig. 12k, next, NPB (a diamine derivative) of 70nm is deposited as a protective layer and a light extraction layer 16 on the side of the second electrode layer 14 remote from the substrate 11 to complete the fabrication of the light emitting device 10. The protective layer and the light extraction layer 16 may prevent the second electrode layer 14 from being oxidized after being in contact with air. After that, the light emitting device 10 is packaged.

In the two specific manufacturing methods provided in the embodiments of the present application, the first electrode layer 13, the light-emitting functional layer 12, and the second electrode layer 14 are sequentially stacked on the substrate 11, that is, the first electrode layer 13, the light-emitting functional layer 12, and the second electrode layer 14 are sequentially manufactured. The second electrode layer 14, the light emitting function and the first electrode layer 13 may be sequentially stacked on the substrate 11, that is, the second electrode layer 14, the light emitting function layer 12 and the first electrode layer 13 may be sequentially fabricated on the substrate 11, and the specific fabrication process may refer to the case of sequentially fabricating the first electrode layer 13, the light emitting function and the second electrode layer 14, which will not be described herein.

By applying the embodiment of the application, at least the following beneficial effects can be realized:

1. The light emitting device 10 in the embodiment of the application comprises a light emitting functional layer 12, a first electrode layer 13 and a second electrode layer 14 which are arranged on opposite sides of the light emitting functional layer 12, wherein the second electrode layer 14 comprises at least one connecting block 141 and a plurality of sub-electrode blocks 140 which are arranged at intervals, and the orthographic projections of the sub-electrode blocks 140 on the substrate 11 are not overlapped; at least a part of the sub-electrode blocks 140 are connected to the same connection block 141, and the aperture ratio of the second electrode layer 14 is 5% to 95% in each sub-pixel unit 120. By arranging the second electrode layer 14 into a plurality of sub-electrode blocks 140 arranged at intervals, a part of the light emitted by the light emitting functional layer 12 is reflected by the second electrode layer 14, then is reflected for a plurality of times in the optical resonant cavity formed by the second electrode layer 14 and the first electrode layer 13, and then is emitted out, and the other part of the light (in the area which is not blocked by the second electrode layer 14) is directly emitted out by the light emitting functional layer 12.

2. In the embodiment of the present application, the pitches between the adjacent sub-electrode blocks 140 are equalized by making the pitches in the row direction; and/or, the pitches between the adjacent sub-electrode blocks 140 are equalized in the column direction, and when patterning the second electrode layer 14 to form a plurality of sub-electrode blocks 140, it is easier in process and the light emitting of the light emitting device 10 is more uniform.

3. In the embodiment of the present application, the width of the sub-electrode block 140 is made greater than or equal to 1 μm and less than or equal to 1 mm by making the width in the row direction; and/or, the width of the sub-electrode block 140 is made to be greater than or equal to 1 μm and less than or equal to 1 mm in the column direction, and the ratio of the area of the sub-electrode block 140 to the area of the sub-pixel power supply may be made to be within a reasonable range to achieve a balance between enhancing front emission of light of a specific wavelength and improving red or blue shift of the emitted light.

4. By providing the auxiliary contact layer 15 between the second electrode layer 14 and the light emitting function layer 12, current unevenness due to discrete contact between the second electrode layer 14 and the light emitting function layer 12 due to patterning of the second electrode layer 14 can be improved, and the light emitting effect of the light emitting device 10 can be ensured.

5. When the hollow transport layer 122 is disposed above the quantum dot layer 123 in the light-emitting functional layer 12 (the quantum dot layer 123 is fabricated first in fabricating the light-emitting functional layer 12, and then the hole transport layer 122 is fabricated on the quantum dot layer 123), by disposing the interfacial dipole layer 125 between the quantum dot layer 123 and the hole transport layer 122, the hydrophilic-hydrophobic property of the surface of the quantum dot layer 123 can be changed, and the damage to the quantum dot layer 123 caused by the material solvent of the space transport layer 122 in the subsequent fabrication of the hole transport layer 122 can be prevented.

In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.

The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.

In the description of the present specification, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.

The foregoing is only a partial embodiment of the application, and it should be noted that it will be apparent to those skilled in the art that modifications and adaptations can be made without departing from the principles of the application, and such modifications and adaptations are intended to be comprehended within the scope of the application.

Claims

1. A light emitting device, comprising:

A substrate;

The second electrode layer comprises at least one connecting block and a plurality of sub-electrode blocks which are arranged at intervals, and the orthographic projection of each sub-electrode block on the substrate is not overlapped; at least part of the sub-electrode blocks are connected to the same connecting block, and the aperture ratio of the second electrode layer is 5-95% in each sub-pixel unit;

and at the position corresponding to each sub-pixel unit, the area of the sub-electrode block is more than or equal to 7% of the area of the sub-pixel unit and less than or equal to 60% of the area of the sub-pixel unit.

2. The light-emitting device according to claim 1, wherein the first electrode layer is located on a side of the light-emitting functional layer close to the substrate, and the second electrode layer is located on a side of the light-emitting functional layer remote from the substrate; or alternatively

3. The light-emitting device according to claim 2, wherein a pitch between adjacent ones of the sub-electrode blocks is equal in a row direction; and/or, in the column direction, the pitches between adjacent sub-electrode blocks are equal.

4. The light emitting device of claim 2, wherein the plurality of sub-electrode blocks have the same orthographic projection shape on the substrate.

5. The light-emitting device according to claim 2, wherein the shape of the sub-electrode block comprises a rectangle, square, circle, triangle, trapezoid, or sector.

6. The light-emitting device according to claim 2, wherein a width of each of the sub-electrode blocks is equal in a row direction; and/or, in the column direction, the widths of the sub-electrode blocks are equal.

7. The light-emitting device according to claim 6, wherein a width of the sub-electrode block in a row direction is greater than or equal to 1 μm and less than or equal to 1 mm; and/or, in the column direction, the width of the sub-electrode block is greater than or equal to 1 micron and less than or equal to 1 millimeter.

8. The light-emitting device according to claim 1, wherein an auxiliary contact layer is provided between the second electrode layer and the light-emitting functional layer, the auxiliary contact layer being connected to the second electrode layer and the light-emitting functional layer, respectively;

9. The light-emitting device according to claim 8, wherein the light transmittance of the auxiliary contact layer is 85% or more.

10. The light-emitting device according to any one of claims 1 to 9, wherein the light-emitting functional layer includes an electron transport layer, a quantum dot layer, an interface dipole layer, a hole transport layer, and a hole injection layer, which are sequentially stacked in the direction from the substrate to the second electrode layer; or the light-emitting functional layer comprises a hole injection layer, a hole transport layer, a quantum dot layer and an electron transport layer which are sequentially stacked.

11. The light-emitting device according to any one of claims 1 to 9, wherein a thickness of the second electrode layer is greater than or equal to 10 nm and less than or equal to 25 nm in a direction in which the substrate is directed toward the light-emitting functional layer.

12. A display device characterized in that the display device comprises the light emitting device according to any one of claims 1 to 10.

13. A method of fabricating a light emitting device, comprising:

Providing a substrate;

Manufacturing a light-emitting functional layer, a first electrode layer and a second electrode layer on one side of the substrate, wherein the light-emitting functional layer comprises a plurality of sub-pixel units arranged at intervals, the first electrode layer and the second electrode layer are arranged on the opposite side of the light-emitting functional layer and used for applying voltage to the light-emitting functional layer, and the second electrode layer comprises at least one connecting block and a plurality of sub-electrode blocks arranged at intervals, and orthographic projections of the sub-electrode blocks on the substrate are not overlapped; at least part of the sub-electrode blocks are connected to the same connecting block, and the aperture ratio of the second electrode layer is 5-95% in each sub-pixel unit;

14. The method of fabricating a light emitting device according to claim 13, wherein fabricating a light emitting functional layer, a first electrode layer, and a second electrode layer on one side of the substrate comprises:

15. The method of manufacturing of claim 14, further comprising: and manufacturing an auxiliary contact layer between the light-emitting functional layer and the second electrode layer, wherein the orthographic projection of the auxiliary contact layer on the substrate is overlapped with the orthographic projection of the second electrode layer on the substrate, and the orthographic projection of the auxiliary contact layer on the substrate is overlapped with the orthographic projection of the light-emitting functional layer on the substrate.