CN114335235B - Intelligent optical detector and using method and preparation method thereof - Google Patents
Intelligent optical detector and using method and preparation method thereof Download PDFInfo
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- CN114335235B CN114335235B CN202111680317.0A CN202111680317A CN114335235B CN 114335235 B CN114335235 B CN 114335235B CN 202111680317 A CN202111680317 A CN 202111680317A CN 114335235 B CN114335235 B CN 114335235B
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Abstract
The present disclosure provides an intelligent light detector and a using method and a preparation method thereof, wherein the intelligent light detector comprises: a substrate; a gate formed on the upper surface of the substrate; the contact electrode is formed on the upper surface of the grid electrode and is positioned on one side of the grid electrode; the first dielectric layer is formed on the upper surface of the grid; the suspension grid layer is formed on the upper surface of the first dielectric layer; the second dielectric layer is formed on the upper surface of the suspension grid layer; the active conducting layer is formed on the upper surface of the second dielectric layer; the source electrode is formed on the upper surface of the second dielectric layer and is positioned on one side of the active conductive layer; the drain electrode is formed on the upper surface of the second dielectric layer and is positioned on the other side of the active conductive layer; a semiconductor photosensitive layer formed on the upper surface of the active conductive layer; and the third dielectric layer is formed on the upper surface of the semiconductor photosensitive layer. The present disclosure adjusts the concentration of electrons or holes in the floating gate layer by adjusting the voltage applied to the gate electrode, which changes the photoresponse of the photodetector accordingly.
Description
Technical Field
The disclosure relates to the field of optoelectronic devices, and in particular relates to an intelligent photodetector and a using method and a preparation method thereof.
Background
The optical detector can realize photoelectric conversion and optical information acquisition, and the optical responsivity is the most important performance index of the optical detector. Once the light detector is manufactured at the present stage, the performance of the device is fixed and cannot be adjusted, and the device does not have the functions of learning and memorizing. The light responsivity nonvolatile adjustable light detector can be used for constructing a sensing and storage integrated intelligent chip, can realize the integration of sensing, storage and calculation, can reduce the size of the chip, reduce time delay and improve energy efficiency, can be widely used for artificial intelligence and universal intelligent union, and has no report at present.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
In view of the above, the present disclosure provides an intelligent light detector and methods of using and making the same.
According to a first aspect of the present disclosure, there is provided an intelligent light detector comprising:
a substrate;
a gate formed on the upper surface of the substrate;
the contact electrode is formed on the upper surface of the grid electrode and is positioned on one side of the grid electrode;
the first dielectric layer is formed on the upper surface of the grid;
the suspended gate layer is formed on the upper surface of the first dielectric layer;
the second dielectric layer is formed on the upper surface of the suspension gate layer;
the active conducting layer is formed on the upper surface of the second dielectric layer;
the source electrode is formed on the upper surface of the second dielectric layer and is positioned on one side of the active conductive layer;
the drain electrode is formed on the upper surface of the second dielectric layer and is positioned on the other side of the active conductive layer;
the semiconductor photosensitive layer is formed on the upper surface of the active conductive layer;
and the third dielectric layer is formed on the upper surface of the semiconductor photosensitive layer.
Optionally, the thickness of the floating gate layer is 1 to 20nm, and the material of the floating gate layer includes any one of graphene, molybdenum disulfide, and semiconductor quantum dot material.
Optionally, the thickness of the active conductive layer is 0.1 to 10nm, and the material of the active conductive layer includes any one of graphene and molybdenum disulfide.
Optionally, a semiconductor photosensitive layer is used to absorb light, generating electron-hole pairs;
the thickness of the semiconductor photosensitive layer is 1-100 nm, and the material of the semiconductor photosensitive layer comprises any one of semiconductor quantum dots, two-dimensional semiconductor materials, perovskite thin films and metal oxide thin films.
Optionally, the thickness of the gate is 1 to 50nm, the gate is made of a conductive material, and when the gate is made of metal, the gate is directly used for conducting electricity, and a contact electrode is not manufactured.
Optionally, the roughness of the substrate is less than 1nm;
the material of the substrate comprises any one of silicon, silicon dioxide, quartz, poly terephthalic acid plastic and a complementary metal oxide semiconductor chip;
if the substrate is a silicon substrate, the substrate surface has 300nm silicon oxide.
Optionally, the thicknesses of the first dielectric layer, the second dielectric layer and the third dielectric layer are all 1-100 nm;
the materials of the first dielectric layer, the second dielectric layer and the third dielectric layer comprise any one of parylene, aluminum oxide, hafnium oxide, silicon oxide and silicon nitride.
Optionally, the thicknesses of the contact electrode, the source electrode and the drain electrode are all 10-200 nm;
the contact electrode, the source electrode and the drain electrode are made of any one of inert metal and inert material;
if an adhesion layer grows on the bottom of the contact electrode and/or the source electrode and/or the drain electrode, the material of the adhesion layer comprises any one of titanium and chromium, and the thickness of the adhesion layer is 2-10 nm.
A second aspect of the present disclosure provides a method for using an intelligent light detector, which is suitable for the intelligent light detector, and includes:
applying positive voltage to the grid electrode, injecting electrons into the floating grid layer, applying negative voltage to the grid electrode, and injecting holes into the floating grid layer;
the magnitude of the voltage applied to the gate is proportional to the number of injected electrons or holes in the floating gate layer;
the Fermi level of the active conductive layer is changed by the change of the quantity of electrons or holes in the suspension gate layer, and the photoresponse between the active conductive layer and the semiconductor photosensitive layer is changed by the change of the Fermi level of the active conductive layer;
when the voltage applied to the grid electrode is not changed, the electrons or holes in the floating grid layer can not be automatically lost, so that the optical responsivity of the optical detector is kept unchanged.
A third aspect of the present disclosure provides a method for manufacturing an intelligent light detector, which is suitable for the above intelligent light detector, and the method includes:
manufacturing a grid on the upper surface of the substrate;
manufacturing a contact electrode on the upper surface of the grid electrode, and enabling the contact electrode to be positioned on one side of the grid electrode;
manufacturing a first dielectric layer on the upper surface of the grid;
manufacturing a suspended grid layer on the upper surface of the first dielectric layer;
manufacturing a second dielectric layer on the upper surface of the suspension grid layer;
manufacturing an active conductive layer on the upper surface of the second dielectric layer;
manufacturing a source electrode on the upper surface of the second dielectric layer, and enabling the source electrode to be positioned on one side of the active conductive layer;
manufacturing a drain electrode on the upper surface of the second dielectric layer, and enabling the drain electrode to be positioned on the other side of the active conductive layer;
manufacturing a semiconductor photosensitive layer on the upper surface of the active conductive layer;
and manufacturing a third dielectric layer on the upper surface of the semiconductor photosensitive layer.
The present disclosure provides an intelligent light detector and a using method and a preparation method thereof, wherein the intelligent light detector comprises: a substrate; a gate formed on the upper surface of the substrate; the contact electrode is formed on the upper surface of the grid electrode and is positioned on one side of the grid electrode; the first dielectric layer is formed on the upper surface of the grid; the suspended gate layer is formed on the upper surface of the first dielectric layer; the second dielectric layer is formed on the upper surface of the suspension gate layer; the active conducting layer is formed on the upper surface of the second dielectric layer; the source electrode is formed on the upper surface of the second dielectric layer and is positioned on one side of the active conductive layer; the drain electrode is formed on the upper surface of the second dielectric layer and is positioned on the other side of the active conductive layer; a semiconductor photosensitive layer formed on the upper surface of the active conductive layer; and the third dielectric layer is formed on the upper surface of the semiconductor photosensitive layer. According to the optical detector, the suspension grid layer is added between the first dielectric layer and the second dielectric layer, the concentration of electrons or holes in the suspension grid layer can be adjusted by adjusting the voltage applied to the grid, the optical responsivity of the optical detector is changed accordingly, the optical responsivity of the optical detector can be adjusted, and meanwhile, the electrons or holes in the suspension grid layer cannot be spontaneously lost, so that the optical responsivity of the optical detector can be kept unchanged after the optical responsivity of the optical detector is adjusted by applying the voltage to the grid.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 schematically illustrates a schematic structural diagram of an intelligent light detector according to an embodiment of the present disclosure;
fig. 2 schematically illustrates a flow chart of a method for manufacturing an intelligent photodetector according to an embodiment of the present disclosure;
fig. 3 schematically illustrates a schematic diagram of a manufacturing process of an intelligent photodetector according to an embodiment of the present disclosure; and
fig. 4A and 4B schematically illustrate a schematic diagram of a method for using an intelligent light detector according to an embodiment of the present disclosure.
Description of reference numerals:
1, a substrate; 2, grid electrode; 3 contacting the electrode; 4a first dielectric layer; 5, a floating gate layer; 6 a second dielectric layer; 7 an active conductive layer; 8, a source electrode; 9 a drain electrode; 10 a semiconductor photosensitive layer; 11 a third dielectric layer.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that these descriptions are illustrative only and are not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
It should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, although examples may be provided herein of parameters including particular values, it should be appreciated that the parameters need not be exactly equal to the respective values, but may approximate the respective values within acceptable error margins or design constraints. In addition, directional terms, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", and the like, referred to in the following embodiments are directions referring to the drawings only. Accordingly, the directional terminology used is intended to be illustrative and is not intended to be limiting of the present disclosure.
The present disclosure provides an intelligent light detector and a using method and a preparation method thereof, wherein the light detector comprises: a substrate; a gate formed on the upper surface of the substrate; the contact electrode is formed on the upper surface of the grid electrode and is positioned on one side of the grid electrode; the first dielectric layer is formed on the upper surface of the grid; the suspension grid layer is formed on the upper surface of the first dielectric layer; the second dielectric layer is formed on the upper surface of the suspension grid layer; the active conducting layer is formed on the upper surface of the second dielectric layer; the source electrode is formed on the upper surface of the second dielectric layer and is positioned on one side of the active conductive layer; the drain electrode is formed on the upper surface of the second dielectric layer and is positioned on the other side of the active conductive layer; a semiconductor photosensitive layer formed on the upper surface of the active conductive layer; and the third dielectric layer is formed on the upper surface of the semiconductor photosensitive layer. According to the optical detector, the suspension grid layer is additionally arranged between the first dielectric layer and the second dielectric layer, the concentration of electrons or holes in the suspension grid layer can be adjusted by adjusting the voltage applied to the grid, the optical responsivity of the optical detector is changed accordingly, the optical responsivity of the optical detector can be adjusted, and meanwhile, the electrons or holes in the suspension grid layer cannot be lost spontaneously, so that the optical responsivity of the optical detector can be kept unchanged after the optical responsivity of the optical detector is adjusted by applying the voltage to the grid.
Fig. 1 schematically illustrates a structural schematic diagram of an intelligent light detector provided in an embodiment of the present disclosure.
It should be understood that the intelligent light detector shown in fig. 1 is merely exemplary to facilitate an understanding of aspects of the present disclosure by those skilled in the art, and is not intended to limit the scope of the present disclosure. In other embodiments, the materials, sizes, shapes, and the like of the layers in the intelligent light detector can be selected according to practical situations, and are not limited herein.
As shown in fig. 1, in an embodiment of the present disclosure, the intelligent light detector includes: a substrate 1; a gate 2 formed on the upper surface of the substrate 1; a contact electrode 3 formed on an upper surface of the gate electrode 2 and located at one side of the gate electrode 2; a first dielectric layer 4 formed on the upper surface of the gate 2; a floating gate layer 5 formed on the upper surface of the first dielectric layer 4; a second dielectric layer 6 formed on the upper surface of the floating gate layer 5; an active conductive layer 7 formed on the upper surface of the second dielectric layer 6; a source electrode 8 formed on the upper surface of the second dielectric layer 6 and located on one side of the active conductive layer 7; a drain electrode 9 formed on the upper surface of the second dielectric layer 6 and located on the other side of the active conductive layer 7; a semiconductor photosensitive layer 10 formed on the upper surface of the active conductive layer 7; and a third dielectric layer 11 formed on the upper surface of the semiconductor photosensitive layer 10.
In this embodiment, a floating gate layer 5 is added between the first dielectric layer 4 and the second dielectric layer 6, the material of the floating gate layer 5 may be any one of graphene, molybdenum disulfide, a semiconductor quantum dot material, and the like, and the thickness of the floating gate layer 5 may be 1 to 20nm. When a voltage is applied to the gate 2, electrons or holes are injected into the floating gate layer 5, when a positive voltage is applied to the gate 2, electrons are injected into the floating gate layer 5 (as shown in fig. 4A), when a negative voltage is applied to the gate 2, holes are injected into the floating gate layer 5 (as shown in fig. 4B), the larger the voltage applied to the gate 2, the higher the concentration of electrons or holes injected into the floating gate layer 5, and when the concentration of electrons or holes in the floating gate layer 5 changes, the fermi level of the active conductive layer 7 changes, so that the photoresponsiveness of the photodetector also changes, and therefore, by adjusting the voltage applied to the gate 2, the photoresponsiveness of the photodetector can be adjusted, and further, since carriers in the floating gate layer 5 do not spontaneously leak, after the photoresponsiveness of the photodetector is adjusted to a target value by applying a voltage to the gate 2, the photoresponsiveness of the photodetector can remain unchanged, and after the photoresponsiveness is adjusted to the target value, the photoresponsiveness of the photodetector can remain unchanged even if the voltage applied to the gate 2 is removed. If the light responsivity of the light detector needs to be adjusted again, only the voltage needs to be applied to the grid 2 of the light detector again, and the specific magnitude of the applied voltage depends on the target value of the light responsivity and can be selected according to actual requirements.
In an embodiment of the present disclosure, the thickness of the active conductive layer 7 may be 0.1 to 10nm, and the material of the active conductive layer 7 may be any two-dimensional material such as graphene and molybdenum disulfide. The semiconductor photosensitive layer 10 absorbs light and generates electron-hole pairs, has a thickness of 1 to 100nm, and may be made of any one of semiconductor quantum dots, two-dimensional semiconductor materials, perovskite thin films, metal oxide thin films, and the like.
In an embodiment of the present disclosure, the thickness of the gate 2 may be 1 to 50nm, the gate 2 may be made of a conductive material with a high conductivity, for example, a two-dimensional material such as multi-layer graphene and molybdenum disulfide, or a metal, when the gate 2 is made of a metal with a weak adhesion, for example, gold and platinum, an adhesion layer may be grown at the bottom of the gate 2, the material of the adhesion layer may be titanium and chromium, and the thickness of the adhesion layer is 2 to 10nm, and when the gate 2 is made of a metal, the gate 2 may be directly used for conducting electricity, and the contact electrode 3 is not manufactured.
In an embodiment of the present disclosure, the roughness of the substrate 1 is small, for example, less than 1nm, and the material of the substrate 1 may be selected from a variety of materials, for example, any one of silicon, silicon dioxide, quartz, poly-p-phthalic plastic, etc., or a polished complementary metal oxide semiconductor chip, and when the substrate 1 is a silicon substrate, a silicon wafer with 300nm silicon oxide on the surface is selected as the substrate 1.
In an embodiment of the present disclosure, the thicknesses of the first dielectric layer 4, the second dielectric layer 6, and the third dielectric layer 11 may be selected from 1 to 100nm, and the materials of the first dielectric layer 4, the second dielectric layer 6, and the third dielectric layer 11 include any one of parylene, aluminum oxide, hafnium oxide, silicon oxide, and silicon nitride, where the third dielectric layer 11 serves to protect the entire photodetector.
In an embodiment of the present disclosure, the thicknesses of the contact electrode 3, the source electrode 8, and the drain electrode 9 may be 10 to 200nm, the materials of the contact electrode 3, the source electrode 8, and the drain electrode 9 may be inert metals or inert materials, when an inert material is selected, an inert material with a high electrical conductivity is selected, and when an adhesion layer is grown on the bottom of the contact electrode 3 and/or the source electrode 8 and/or the drain electrode 9, the material of the adhesion layer includes any one of titanium and chromium, and the thickness of the adhesion layer is 2 to 10nm.
It should be noted that the above descriptions of materials, thicknesses, etc. of the layers in the intelligent light detector are only exemplary to facilitate the understanding of the aspects of the present disclosure by those skilled in the art, and are not intended to limit the scope of the present disclosure. In other embodiments, the materials, thicknesses, and the like of the layers in the intelligent light detector may be selected according to practical situations, and are not limited herein.
In the embodiment of the disclosure, the floating gate layer 5 is added between the first dielectric layer 4 and the second dielectric layer 6, a voltage is applied to the gate 2, electrons or holes can be injected into the floating gate layer 5, and the optical responsivity of the detector can be adjusted by adjusting the voltage applied to the gate 2, so that the optical responsivity of the optical detector becomes adjustable, and meanwhile, because the carriers in the floating gate layer 5 do not spontaneously run off, when the voltage applied to the gate 2 is not changed, the optical responsivity of the detector also does not change, so that the optical responsivity of the optical detector can be maintained after being adjusted, and the time delay and power consumption of the optical detector are reduced.
The following detailed description of the fabrication process of the intelligent photo-detector in fig. 1 will be provided in conjunction with specific examples, and it should be understood that the following description is only exemplary to help those skilled in the art better understand the solution of the present disclosure, and is not intended to limit the scope of the present disclosure.
Fig. 2 schematically illustrates a flowchart of a method for manufacturing an intelligent photodetector according to an embodiment of the present disclosure. Fig. 3 schematically illustrates a schematic diagram of a manufacturing process of an intelligent light detector according to an embodiment of the present disclosure.
Referring to fig. 2 and fig. 3 together, in an embodiment of the present disclosure, a method for manufacturing an intelligent photodetector includes operations S201 to S210.
In operation S201, a gate 2 is fabricated on an upper surface of a substrate 1.
In operation S202, a contact electrode 3 is formed on the upper surface of the gate 2, and the contact electrode 3 is located at one side of the gate 2.
In operation S203, a first dielectric layer 4 is formed on the upper surface of the gate 2.
In operation S204, a floating gate layer 5 is formed on the upper surface of the first dielectric layer 4.
In operation S205, a second dielectric layer 6 is formed on the upper surface of the floating gate layer 5.
In operation S206, an active conductive layer 7 is formed on the upper surface of the second dielectric layer 6.
In operation S207, a source electrode 8 is formed on the upper surface of the second dielectric layer 6, and the source electrode 8 is located on one side of the active conductive layer 7.
In operation S208, a drain electrode 9 is formed on the upper surface of the second dielectric layer 6, and the drain electrode 9 is located on the other side of the active conductive layer 7.
In operation S209, a semiconductor photosensitive layer 10 is fabricated on the upper surface of the active conductive layer 7.
In operation S210, a third dielectric layer 11 is formed on the upper surface of the semiconductor photosensitive layer 10.
In this embodiment, a substrate 1 is selected, the upper surface of the substrate 1 is cleaned, and then a gate 2, a first dielectric layer 4, a floating gate layer 5, a second dielectric layer 6, an active conductive layer 7, a semiconductor photosensitive layer 10, and a third dielectric layer 11 are sequentially formed on the upper surface of the substrate 1. Meanwhile, a contact electrode 3 is further formed on the upper surface of the gate 2, a source electrode 8 and a drain electrode 9 are further formed on the second dielectric layer 6, and the source electrode 8 and the drain electrode 9 can be selectively formed by a vacuum evaporation method.
It should be noted that the above descriptions of the manufacturing method of each layer in the intelligent light detector and the like are only exemplary, so as to facilitate the understanding of the scheme of the present disclosure by those skilled in the art, and are not intended to limit the protection scope of the present disclosure. In other embodiments, the manufacturing method of each layer in the light detector may be selected according to actual situations, and is not limited herein.
The present disclosure also provides a method for using an intelligent light detector, which is suitable for the above intelligent light detector, and the following describes in detail a method for using an intelligent light detector and an operating principle of the intelligent light detector provided by the present disclosure with reference to fig. 4A and fig. 4B.
Fig. 4A and 4B schematically illustrate a schematic diagram of a method for using an intelligent light detector according to an embodiment of the present disclosure.
In an embodiment of the present disclosure, a method for using the intelligent light detector includes: when a positive voltage is applied to the gate 2, electrons are injected into the floating gate layer 5, and when a negative voltage is applied to the gate 2, holes are injected into the floating gate layer 5; the magnitude of the voltage applied to the gate 2 is proportional to the number of electrons or holes injected in the floating gate layer 5; the Fermi level of the active conductive layer 7 is changed by the change of the quantity of electrons or holes in the suspension gate layer 5, and the photoresponse between the active conductive layer 7 and the semiconductor photosensitive layer 10 is changed by the change of the Fermi level of the active conductive layer 7; when the voltage applied to the gate 2 is not changed, the electrons or holes in the floating gate layer 5 will not be spontaneously lost, so that the photoresponse of the photodetector remains unchanged.
In this embodiment, the application of a voltage to the gate 2 may cause a change in the concentration of electrons or holes in the floating gate layer 5, and the change in the concentration of electrons or holes in the floating gate layer 5 may cause a change in the fermi level of the active conductive layer 7, thereby causing a change in the optical responsivity of the photodetector, and achieving the purpose of adjusting the optical responsivity of the photodetector, and the electrons or holes in the floating gate layer 5 may not spontaneously leak, that is, as long as the voltage applied to the gate 2 is unchanged, the concentration of electrons or holes in the floating gate layer 5 is unchanged, and the optical responsivity of the photodetector is unchanged, so that not only the optical responsivity of the photodetector may be adjusted, but also the optical responsivity of the photodetector may be kept unchanged after the adjustment.
In summary, the present disclosure provides an intelligent photodetector and a method of using and a method of making the same. The intelligent optical detector is characterized in that a suspension grid layer is additionally arranged between a first dielectric layer and a second dielectric layer, because voltage is applied to a grid electrode, the concentration of electrons or holes in the suspension grid layer can be changed, the Fermi level of an active conductive layer can be changed, and the optical responsivity of the optical detector can be changed. If the light responsivity of the light detector needs to be adjusted again, only the voltage needs to be applied to the grid electrode of the light detector again, and the specific magnitude of the applied voltage depends on the target value of the light responsivity and can be selected according to actual requirements.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of methods according to various embodiments of the present disclosure. It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved.
It will be appreciated by a person skilled in the art that various combinations or/and combinations of features recited in the various embodiments of the disclosure and/or in the claims may be made, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.
Claims (10)
1. An intelligent light detector, comprising:
a substrate (1);
a gate electrode (2) formed on the upper surface of the substrate (1);
the contact electrode (3) is formed on the upper surface of the grid electrode (2) and is positioned on one side of the grid electrode (2);
the first dielectric layer (4) is formed on the upper surface of the grid (2);
the suspension grid layer (5) is formed on the upper surface of the first dielectric layer (4);
the second dielectric layer (6) is formed on the upper surface of the suspension grid layer (5);
the active conducting layer (7) is formed on the upper surface of the second dielectric layer (6);
the source electrode (8) is formed on the upper surface of the second dielectric layer (6) and is positioned on one side of the active conductive layer (7);
the drain electrode (9) is formed on the upper surface of the second dielectric layer (6) and is positioned on the other side of the active conductive layer (7);
a semiconductor photosensitive layer (10) formed on the upper surface of the active conductive layer (7);
and the third dielectric layer (11) is formed on the upper surface of the semiconductor photosensitive layer (10).
2. The intelligent light detector according to claim 1, wherein the thickness of the floating gate layer (5) is 1-20 nm, and the material of the floating gate layer (5) comprises any one of graphene, molybdenum disulfide and semiconductor quantum dot material.
3. The intelligent light detector according to claim 1, wherein the thickness of the active conductive layer (7) is 0.1-10 nm, and the material of the active conductive layer (7) comprises any one of graphene and molybdenum disulfide.
4. The intelligent photodetector according to claim 1, characterized in that said semiconductor photosensitive layer (10) is adapted to absorb light, generating electron-hole pairs;
the thickness of the semiconductor photosensitive layer (10) is 1-100 nm, and the material of the semiconductor photosensitive layer (10) comprises any one of semiconductor quantum dots, two-dimensional semiconductor materials, perovskite thin films and metal oxide thin films.
5. The intelligent light detector according to claim 1, wherein the thickness of the grid (2) is 1-50 nm, the grid (2) is made of conductive material, when the grid (2) is made of metal, the grid (2) is directly used for conducting electricity, and the contact electrode (3) is not made.
6. The intelligent photodetector according to claim 1, characterized in that the roughness of said substrate (1) is less than 1nm;
the substrate (1) is made of any one of silicon, silicon dioxide, quartz, poly-p-phthalic plastic and a complementary metal oxide semiconductor chip;
if the substrate (1) is a silicon substrate, the surface of the substrate (1) is provided with 300nm silicon oxide.
7. The intelligent light detector of claim 1,
the thicknesses of the first dielectric layer (4), the second dielectric layer (6) and the third dielectric layer (11) are all 1-100 nm;
the first dielectric layer (4), the second dielectric layer (6) and the third dielectric layer (11) are made of any one of parylene, aluminum oxide, hafnium oxide, silicon oxide and silicon nitride.
8. The intelligent photodetector according to claim 1, characterized in that the thickness of said contact electrode (3), said source electrode (8) and said drain electrode (9) is 10-200 nm;
the contact electrode (3), the source electrode (8) and the drain electrode (9) are made of any one of inert metal and inert material;
if an adhesion layer grows on the bottom of the contact electrode (3) and/or the source electrode (8) and/or the drain electrode (9), the material of the adhesion layer comprises any one of titanium and chromium, and the thickness of the adhesion layer is 2-10 nm.
9. A method of using an intelligent light detector, the method being adapted to the intelligent light detector of any one of claims 1-8, the method comprising:
applying a positive voltage to the gate (2), electrons being injected into the floating gate layer (5), applying a negative voltage to the gate (2), holes being injected into the floating gate layer (5);
the magnitude of the voltage applied to the gate (2) is proportional to the number of electrons or holes injected in the floating gate layer (5);
the Fermi level of the active conducting layer (7) is changed by the change of the quantity of electrons or holes in the suspension gate layer (5), and the photoresponse between the active conducting layer (7) and the semiconductor photosensitive layer (10) is changed by the change of the Fermi level of the active conducting layer (7);
when the voltage applied to the grid electrode (2) is unchanged, electrons or holes in the floating grid layer (5) cannot be spontaneously lost, so that the photoresponse of the intelligent photodetector is kept unchanged.
10. A method for preparing an intelligent light detector is characterized by comprising the following steps:
manufacturing a grid (2) on the upper surface of a substrate (1);
manufacturing a contact electrode (3) on the upper surface of a grid (2), and enabling the contact electrode (3) to be positioned on one side of the grid (2);
manufacturing a first dielectric layer (4) on the upper surface of the grid (2);
manufacturing a suspension grid layer (5) on the upper surface of the first dielectric layer (4);
manufacturing a second dielectric layer (6) on the upper surface of the suspension grid layer (5);
manufacturing an active conducting layer (7) on the upper surface of the second dielectric layer (6);
manufacturing a source electrode (8) on the upper surface of the second dielectric layer (6), and enabling the source electrode (8) to be located on one side of the active conductive layer (7);
manufacturing a drain electrode (9) on the upper surface of the second dielectric layer (6), and enabling the drain electrode (9) to be located on the other side of the active conductive layer (7);
manufacturing a semiconductor photosensitive layer (10) on the upper surface of the active conductive layer (7);
and manufacturing a third dielectric layer (11) on the upper surface of the semiconductor photosensitive layer (10).
Priority Applications (1)
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