CN114335193A - Schottky diode, preparation method thereof and chip - Google Patents
Schottky diode, preparation method thereof and chip Download PDFInfo
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- CN114335193A CN114335193A CN202011071857.4A CN202011071857A CN114335193A CN 114335193 A CN114335193 A CN 114335193A CN 202011071857 A CN202011071857 A CN 202011071857A CN 114335193 A CN114335193 A CN 114335193A
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Abstract
The application provides a schottky diode, includes: a substrate; an epitaxial layer formed on the substrate; a Schottky metal layer formed on the epitaxial layer, wherein a metal component in the Schottky metal layer continuously changes from an interface with the epitaxial layer along a vertical direction of the Schottky metal layer; an electrode layer, comprising: an electrode layer formed on the Schottky metal layer, and a back electrode. The Schottky diode has the Schottky metal layer with continuous component change, so that interface defects can be avoided, and the diode stability is higher.
Description
Technical Field
The application generally relates to the field of electronic components, in particular to a Schottky diode and a preparation method and a chip thereof.
Background
The silicon carbide material has the characteristics of large forbidden band width, high breakdown electric field strength, large saturation drift velocity, good heat conduction performance and the like, and the excellent physical properties make the silicon carbide material become an ideal material for manufacturing high-power, high-frequency, high-temperature-resistant and anti-radiation devices. At present, silicon carbide materials are used for preparing various power devices, such as Schottky diodes, junction barrier diodes, field effect transistors and the like, have good performance, and can partially replace the existing silicon devices.
The statements in the background section merely represent techniques known to the public and are not intended to represent prior art in the field.
Disclosure of Invention
The application provides a schottky diode has the schottky metal layer that continuous composition changes, can avoid interface defect, and diode stability is higher.
According to one aspect of the present application, the schottky diode includes: a substrate; an epitaxial layer formed on the substrate; a Schottky metal layer formed on the epitaxial layer, wherein a metal component in the Schottky metal layer continuously changes from an interface with the epitaxial layer along a vertical direction of the Schottky metal layer; an electrode layer, comprising: an electrode layer formed on the Schottky metal layer, and a back electrode.
According to some embodiments of the present application, the substrate thickness is 300-500 microns.
According to some embodiments of the present application, the epitaxial layer has a thickness of 3-15 microns.
According to some embodiments of the present application, the epitaxial layer comprises n-type silicon carbide.
According to some embodiments of the present application, the schottky metal layer comprises titanium nitride.
According to some embodiments of the present application, the thickness of the schottky metal layer is 200-300 nm.
According to some embodiments of the present application, the metal composition increases from the epitaxial layer interface in a vertical direction of the schottky metal layer.
According to some embodiments of the present application, the schottky diode further comprises a passivation layer covering the exposed region of the schottky metal layer.
According to some embodiments of the present application, the back electrode comprises: and the ohmic contact back electrode is formed on the other surface of the substrate opposite to the epitaxial layer.
According to another aspect of the present application, there is also provided a method for manufacturing a schottky diode, including: preparing a substrate; forming an epitaxial layer on the substrate; forming a back electrode on the substrate; forming a Schottky metal layer with continuously changed metal components on the epitaxial layer; and forming an electrode layer on the Schottky metal layer.
According to some embodiments of the present application, the forming an epitaxial layer on the substrate comprises: and carrying out epitaxial growth on the substrate by adopting a CVD method.
According to some embodiments of the application, the forming a back electrode on the substrate comprises: and depositing metal nickel to form an ohmic contact back electrode.
According to some embodiments of the present application, the forming of the schottky metal layer with a continuously changing metal composition on the epitaxial layer includes: and depositing a metal compound on the epitaxial layer by utilizing a first target and a second target through a co-sputtering technology, and forming the Schottky metal layer with continuously changed metal components by adjusting the sputtering power of the first target and the second target in the deposition process.
According to some embodiments of the present application, the first target comprises a metal target and the second target comprises an alloy target.
According to some embodiments of the application, the method further comprises: after forming an electrode layer on the Schottky metal layer, a passivation layer is formed on the exposed part of the Schottky metal layer.
According to still another aspect of the present application, there is also provided a semiconductor chip including the schottky diode as described above.
According to some embodiments of the present application, the schottky diode provided by the present application has a continuously varying schottky metal layer, which can avoid defects between metal interfaces and improve the stability of the schottky diode. The method for preparing the Schottky diode is simple in process and good in compatibility with a semiconductor process, and batch production can be achieved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
fig. 1 is a schematic cross-sectional view of a schottky diode according to an exemplary embodiment of the present application;
FIG. 2 is a partial cross-sectional TEM view of a Schottky diode according to an exemplary embodiment of the present application;
FIG. 3 is a view of a portion of an interface of a Schottky diode according to an exemplary embodiment of the present application;
fig. 4 is a flow chart of a method of fabricating a schottky diode according to an exemplary embodiment of the present application;
fig. 5A-5F are process diagrams of schottky diode fabrication according to exemplary embodiments of the present application.
Detailed Description
The following detailed description of the present application, taken in conjunction with the accompanying drawings and examples, is provided to enable the aspects of the present application and its advantages to be better understood. However, the specific embodiments and examples described below are for illustrative purposes only and are not limiting of the present application.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the embodiments of the disclosure can be practiced without one or more of the specific details, or with other means, components, materials, devices, or the like. In such cases, well-known structures, methods, devices, implementations, materials, or operations are not shown or described in detail.
The flow charts shown in the drawings are merely illustrative and do not necessarily include all of the contents and operations/steps, nor do they necessarily have to be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the actual execution sequence may be changed according to the actual situation
The terms "first," "second," "third," and "fourth," etc. in the description and claims of this application and in the accompanying drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Schottky (Schottky) diode, also called Schottky barrier diode (SBD for short), is a low power consumption, ultra high speed semiconductor device. The most remarkable characteristics are that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward conduction voltage drop is only about 0.4V. It is used as rectifier diode, flywheel diode and protective diode for high frequency, low voltage and large current, and also as rectifier diode and small signal detecting diode in microwave communication circuit. It is common in communication power supplies, frequency converters, and the like.
The metal conductor has a large number of conduction electrons inside. When a metal is in contact with a semiconductor (the distance between the two is only on the order of the size of an atom), the fermi level of the metal is lower than that of the semiconductor. The electron density is less than the electron density of the semiconductor conduction band at a fractional energy level within the metal corresponding to the semiconductor conduction band. Thus, upon contact, electrons diffuse from the semiconductor to the metal, causing the metal to take a negative charge and the semiconductor to take a positive charge. Since metal is an ideal conductor, the negative charge is distributed only in a thin layer whose surface is atomic-sized. In the case of an N-type semiconductor, donor impurity atoms losing electrons become positive ions and are distributed in a large thickness. As a result of the diffusion movement of electrons from the semiconductor to the metal, a space charge region, a self-created electric field and a barrier are formed, and the depletion layer is only on one side of the N-type semiconductor (the barrier region falls entirely on the semiconductor side). The direction of a self-establishing electric field in the barrier region is from the N-type region to the metal, the self-establishing electric field is increased along with the emission of hot electrons, the drift current opposite to the direction of the diffusion current is increased, and finally, the dynamic balance is achieved, and a contact barrier is formed between the metal and the semiconductor, namely a Schottky barrier.
The internal circuit structure of a typical schottky rectifier is based on an N-type semiconductor. Since silicon carbide material has great advantages under high power or ultra-high power conditions, it is very important to minimize the defects of the device in the structural design, such as the defects of the single crystal substrate, the defects of the epitaxial layer, and the interface transition condition between the layers, which all affect the performance of the device to a great extent, and if the performance is not good, the device will fail. In the preparation process of the silicon carbide Schottky diode, in order to avoid the diffusion of metal and realize good Schottky performance, the metal layer is generally made of double-layer metal. However, the double-layer metal is easy to have defects and abrupt composition changes at the interface, and when the double-layer metal is impacted by a large current, the defects may expand and accumulate for a long time, which may affect the stability of the device.
In view of the above, the present application provides a schottky diode with continuously varying composition and a method for manufacturing the same.
The present application will be described with reference to specific examples.
Fig. 1 is a schematic cross-sectional view of a schottky diode according to an exemplary embodiment of the present application.
Referring to fig. 1, according to an exemplary embodiment, the schottky diode provided herein includes a substrate 101, an epitaxial layer 103, a schottky metal layer 105, and an electrode layer. The electrode layer includes an electrode layer 107 formed on the schottky metal layer, and a back electrode layer 104. The metal component in the schottky metal layer 105 changes continuously from the interface with the epitaxial layer along the direction perpendicular to the schottky metal layer, and gradually transitions.
According to some embodiments, the N element of the titanium nitride has a gradually increasing trend along the vertical direction of the schottky metal layer from the epitaxial layer interface.
As shown in FIG. 1, according to some embodiments, substrate 101 comprises a silicon carbide single crystal substrate having a thickness of 300-500 microns, 4-8 inches. In this embodiment, the substrate 101 is a 4H-SiC single crystal substrate having a thickness of 300 μm and 4 inches. The Al-Si Schottky diode manufactured by adopting the Si planar process can save noble metals, greatly reduce the cost and improve the parameter consistency.
As shown in fig. 1, according to some embodiments, an epitaxial layer 103 is formed on a substrate 101 and comprises n-type silicon carbide with a thickness of 3-15 microns and a gauge of 4 inches. In this embodiment, the silicon carbide epitaxial layer 103 is a 10 micron thick n-type silicon carbide layer, as shown in fig. 2, the epitaxial layer 103 in a cross-sectional view of a schottky diode.
It should be noted here that fig. 2 shows a sectional TEM view of a schottky diode portion, in which the black portion of the uppermost layer is introduced during the preparation of the TEM sample, regardless of the device structure.
As shown in fig. 2, the main function of the epitaxial layer 103 is to reduce the junction capacitance of the schottky diode and to increase the reverse breakdown voltage without making the series resistance too large.
Referring to fig. 1, according to an exemplary embodiment, a schottky metal layer 105 is formed on an epitaxial layer 103, and a metal composition in the schottky metal layer 105 continuously varies from an interface of the epitaxial layer 103 in a vertical direction of the schottky metal layer. In some embodiments, the schottky metal layer 105 comprises tin with a thickness in the range of 100-300 nm, and the nitrogen content gradually increases from the interface of the epitaxial layer 103 along the vertical direction of the schottky metal layer 105.
According to some embodiments, the increased nitrogen content of the titanium nitride composition ranges include 0% to 75% (composition is atomic ratio), preferably 25% to 75%, more preferably 50% to 75%. In the present embodiment, the thickness of the schottky metal layer is 200 nm, and the variation range of the titanium element in the titanium nitride is 50% -75%, as shown in the schottky metal layer 105 in fig. 2.
Referring to fig. 1, according to an exemplary embodiment, the schottky diode includes an electrode layer 107 formed on a schottky metal layer 105, and a back electrode 104.
In some embodiments, the electrode layer 107 metal comprises Au, Ge, Ni, Ti, Cr, or alloys thereof, with a thickness in the range of 1-4 microns and an area of 1.5-2mm2. As shown in fig. 2, in the present embodiment, the thickness of the electrode layer 107 is 4 μm.
As shown in fig. 1, according to an exemplary embodiment, the schottky diode further includes a passivation layer 109 covering the exposed region of the schottky metal layer 105. In some embodiments, passivation layer 109 comprises SiO2、Al2O3、SiNxOr SiOxN, and the like.
As shown in fig. 2, in the present embodiment, the passivation layer 109 is silicon dioxide, covering the edge of the electrode layer and the edge of the schottky metal layer. The passivation layer 109 functions to eliminate an electric field in the edge region and improve a withstand voltage of the diode.
Further, according to some embodiments, the schottky diode substrate 101 of the present application is formed with a back electrode 104 on the other side with respect to the epitaxial layer 103. In some embodiments, the back electrode comprises an ohmic contact back electrode formed on the other side of the substrate opposite the epitaxial layer, the back electrode material comprising metallic nickel, and the thickness ranging from 1 to 3 microns.
According to some embodiments of the present application, as shown in an interface observation diagram of fig. 3, a schottky metal layer with continuously changing metal components replaces a layered metal layer in the prior art, thereby avoiding interface defects between the layered metal layers, preventing the sudden change of components from causing problems such as defect expansion of electronic components in high-current operation, and further improving the stability of the electronic devices.
A method of fabricating the schottky diode according to the exemplary embodiment of the present application is described below with reference to fig. 4 and 5A to 5F.
In S401, a substrate is prepared. According to an exemplary embodiment, a substrate 101 is shown in fig. 5A. In some embodiments, a semiconductor single crystal substrate, for example, an n-type silicon carbide substrate, i.e., a 4H — SiC single crystal substrate, may be selected, but the present application is not limited thereto, and may be other suitable substrates.
According to some embodiments, the substrate 101 is sequentially soaked in acetoneUltrasonic treatment in ethanol and deionized water for 10 min, taking out, washing with deionized water, and drying with dry N2Air drying for later use, and then transferring to S403.
In S403, referring to fig. 5B, an epitaxial layer 103 is formed on the substrate.
According to an exemplary embodiment, the substrate is epitaxially grown using a CVD method, gases are supplied onto the substrate 101 at a C/Si ratio in the range of 0.5-1.5, and reacted at a temperature in the range of 1500-1800 ℃, depositing the epitaxial layer 103 as shown in fig. 5B on the substrate 101.
In other embodiments, after the epitaxial layer 103 is obtained, a back electrode is formed on the other side of the substrate 101, and the back electrode is obtained by deposition using an ion sputtering technique. In this embodiment, the back electrode comprises metallic nickel with a thickness of 3 μm as an ohmic contact electrode. Then, the process proceeds to step S405.
In S405, the back electrode 104 is formed on the substrate, as shown in fig. 5C.
According to some embodiments, forming the back electrode 104 on the substrate includes depositing metallic nickel, forming an ohmic contact back electrode. Subsequently, the process proceeds to step S407.
In S407, referring to fig. 5D, the schottky metal layer 105 whose metal composition changes continuously is formed on the epitaxial layer 103.
According to some embodiments, the schottky metal layer 105 is deposited using a co-sputtering technique. In the deposition process, continuous change of metal components is realized by adjusting the sputtering power of the first target and the second target.
According to an exemplary embodiment, a photoresist is spun on the surface of the epitaxial layer 103, optically exposed through a designed schottky metal layer reticle, and developed to form a first photoresist pattern as a deposition mask.
A metal compound is deposited on the exposed region of the epitaxial layer 103 by a co-sputtering technique using the first photoresist pattern as a deposition mask. During the deposition process, the continuous change of the metal components can be realized by adjusting the sputtering power of the first metal target and the second alloy target.
According to some embodiments, the first target comprises a metal target and the second target comprises an alloy target. For example, the first target is a titanium metal (titanium content 99.99%) target, and the second target is a titanium nitride target.
In addition, nitrogen can be introduced into the deposition chamber during the deposition process, the first target material, such as a titanium metal target material, is solely used in a nitrogen atmosphere, and the gradient change of the titanium nitride can be realized by adjusting the sputtering power and/or the nitrogen concentration of the first target material.
According to an exemplary embodiment, the continuous variation of the metal content in the schottky metal layer by the co-sputtering technique may be achieved by continuously adjusting the sputtering power of each target, for example, in this embodiment, the ratio of the sputtering frequency of the first target to the sputtering frequency of the second target is controlled to be continuously varied within a certain range.
Then, the obtained substrate having the schottky metal layer whose composition is continuously changed is put into an organic solvent, for example, an acetone solvent, and the photoresist is removed, so that the schottky metal layer 105 whose metal composition is continuously changed as shown in fig. 5D is obtained with a thickness of 300 nm.
In this embodiment, after obtaining the schottky metal layer and removing the photoresist, the substrate is annealed in a rapid annealing furnace, and then, the process proceeds to step S409
In S409, the electrode layer 107 is formed on the schottky metal layer 105, as shown in fig. 5E.
According to an exemplary embodiment, an electrode layer is formed on the schottky metal obtained in S407 using a magnetron sputtering deposition technique. In some embodiments, a photoresist is spun on the surface of the schottky metal layer 105, and is optically exposed through a designed electrode layer mask and developed to form a second photoresist pattern as a mask.
Using the second photoresist pattern as a deposition mask, placed in a magnetron sputter deposition chamber, aluminum metal can be selectively deposited to form the electrode layer 107 as shown in FIG. 5E.
The substrate with the electrode layer 107 obtained is put in an organic solvent, for example, an acetone solvent, and the photoresist is removed. In the present embodiment, the electrode layer 107 having a thickness of 4 μm was obtained.
According to other embodiments, in S409, after forming an electrode layer on the schottky metal layer, a passivation layer 109 is formed on the exposed portion of the schottky metal layer, as shown in fig. 5F.
According to an exemplary embodiment, a photoresist is spin-coated on the electrode layer, and is optically exposed using a designed reticle and developed to form a third photoresist pattern substrate.
Placing the third photoresist pattern substrate in a particle sputter deposition chamber to form a passivation layer 109 as shown in fig. 5E; the substrate with the passivation layer 109 obtained is put into an organic solvent, for example, an acetone solvent, and the photoresist is removed. In this embodiment, the passivation layer is a 1 micron silicon dioxide layer 109.
The embodiments of the present application have been described and illustrated in detail above. It should be clearly understood that this application describes how to make and use particular examples, but the application is not limited to any details of these examples. Rather, these principles can be applied to many other embodiments based on the teachings of the present disclosure.
Through the description of the example embodiments, those skilled in the art will readily appreciate that the technical solutions according to the embodiments of the present application have at least one or more of the following advantages.
According to some embodiments, the method for manufacturing the Schottky diode is simple in process, the used raw materials are easy to obtain, the compatibility with a semiconductor process is good, and batch production can be achieved.
It should be understood that the above examples are only for clearly illustrating the present application and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. A schottky diode, comprising:
a substrate;
an epitaxial layer formed on the substrate;
a Schottky metal layer formed on the epitaxial layer, wherein a metal component in the Schottky metal layer continuously changes from an interface with the epitaxial layer along a vertical direction of the Schottky metal layer;
an electrode layer, comprising: an electrode layer formed on the Schottky metal layer, and a back electrode.
2. The schottky diode of claim 1 wherein the epitaxial layer comprises:
n-type silicon carbide with a thickness of 3-15 microns.
3. The schottky diode of claim 1 wherein the schottky metal layer comprises titanium nitride.
4. The schottky diode of claim 1 wherein the thickness of the schottky metal layer is 200-300 nm.
5. The schottky diode of claim 1 wherein the metal composition increases from the epitaxial layer interface in a direction perpendicular to the schottky metal layer.
6. The schottky diode of claim 1 further comprising a passivation layer covering the exposed region of the schottky metal layer.
7. A method for fabricating a schottky diode, comprising:
preparing a substrate;
forming an epitaxial layer on the substrate;
forming a back electrode on the substrate;
forming a Schottky metal layer with continuously changed metal components on the epitaxial layer;
and forming an electrode layer on the Schottky metal layer.
8. The method of claim 7, wherein forming a schottky metal layer with a continuously changing metal composition on the epitaxial layer comprises:
depositing a metal compound on the epitaxial layer by utilizing a first target and a second target through a co-sputtering technology, and forming the Schottky metal layer with continuously changed metal components by adjusting the sputtering power of the first target and the second target in the deposition process;
wherein the first target comprises a metal target and the second target comprises an alloy target.
9. The method of claim 7, further comprising:
after forming an electrode layer on the Schottky metal layer, a passivation layer is formed on the exposed part of the Schottky metal layer.
10. A semiconductor chip comprising a schottky diode according to any one of claims 1 to 6.
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| CN202011071857.4A CN114335193A (en) | 2020-10-09 | 2020-10-09 | Schottky diode, preparation method thereof and chip |
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| CN202011071857.4A CN114335193A (en) | 2020-10-09 | 2020-10-09 | Schottky diode, preparation method thereof and chip |
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