CN114335099A - Silicon-based OLED micro-display - Google Patents
Silicon-based OLED micro-display Download PDFInfo
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Abstract
The invention relates to a silicon-based OLED micro-display, which sequentially comprises the following components from bottom to top: the organic light-emitting diode comprises a silicon-based substrate, a metal anode layer, an organic functional layer, a transparent conductive film layer, a semi-transparent semi-reflective metal layer, a thin film packaging layer, a color photoresist layer and a glass cover plate; the metal anode layer comprises red sub-pixels, green sub-pixels and blue sub-pixels; the thicknesses of the parts of the transparent conductive film layer corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel are different; the metal anode layer, the organic functional layer, the transparent conductive film layer and the semi-transparent semi-reflective metal layer form an F-P type microcavity. The invention can effectively improve the brightness and color gamut of the OLED micro-display.
Description
Technical Field
The invention relates to the field of micro-displays, in particular to a silicon-based OLED micro-display.
Background
At present, the OLED panel industry generally adopts the following two ways to realize full-color display: firstly, a red-green-blue sub-pixel parallel method is utilized; secondly, a white OLED and a Color Filter (CF) film are used. The first method is widely applied to the field of medium-sized and small-sized AMOLED, and has the advantages that the color filter film is not needed, the loss of brightness is not caused, and therefore high brightness and low power consumption can be achieved.
However, in the micro-display field, the sub-pixel size is usually smaller than 5 μm, which is currently limited by the alignment precision of the OLED evaporation equipment, and the opening of the Fine Metal Mask (FMM) cannot be made small enough to match the sub-pixels in the panel. Therefore, in the field, a white OLED plus a color filter is usually used to realize full-color display. But CF has low transmittance, resulting in luminance degradation, loss of luminous efficiency, and limited color gamut by CF. Increasing the color gamut necessitates increasing the thickness of the CF, which results in further reduction in light transmittance, reducing device brightness.
Disclosure of Invention
The invention aims to provide a silicon-based OLED micro-display which can effectively improve the brightness and the color gamut of the OLED micro-display.
In order to achieve the purpose, the invention provides the following scheme:
a silicon-based OLED micro-display sequentially comprises from bottom to top: the organic light-emitting diode comprises a silicon-based substrate, a metal anode layer, an organic functional layer, a transparent conductive film layer, a semi-transparent semi-reflective metal layer, a thin film packaging layer, a color photoresist layer and a glass cover plate;
the metal anode layer comprises red sub-pixels, green sub-pixels and blue sub-pixels;
the thicknesses of the parts of the transparent conductive film layer corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel are different;
the metal anode layer, the organic functional layer, the transparent conductive film layer and the semi-transparent semi-reflective metal layer form an F-P type microcavity.
Optionally, the metal anode layer material is Al, Ag, Ti, Mo, TiN, or a combination thereof.
Optionally, the organic functional layer includes: a hole transport layer, a light emitting layer, and an electron transport layer.
Optionally, the thickness of the organic functional layer is 100nm, and the refractive index n is approximately equal to 1.7.
Optionally, the transparent conductive film layer is made of a transparent conductive oxide, the light transmittance is greater than 80%, and the refractive index n is approximately equal to 2.0.
Optionally, the thicknesses of the parts of the transparent conductive film layer corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel are 65-75nm, 40-53nm and 28-35nm respectively.
Optionally, the thickness of the semi-transparent semi-reflective metal layer is 10-20nm, and the light transmittance is 30% -50%.
Optionally, the color photoresist layer includes red CF, green CF, and blue CF, and the red CF, the green CF, and the blue CF correspond to the red sub-pixel, the green sub-pixel, and the blue sub-pixel below one to one.
Optionally, the material of the thin film encapsulation layer is aluminum oxide, silicon nitride, an organic film layer, or a combination thereof.
Optionally, the transparent conductive film layer is manufactured in the following manner:
and sequentially utilizing the processes of gluing, photoetching, developing and etching to form different thicknesses on the transparent conductive film layers above the red sub-pixel, the green sub-pixel and the blue sub-pixel.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
according to the silicon-based OLED micro-display, optical micro-cavities with different cavity lengths are formed by etching the transparent conductive film layers between the organic functional layers corresponding to the red sub-pixels, the green sub-pixels and the blue sub-pixels and the semi-transparent semi-reflective metal layers, so that light in red, green and blue wavelength ranges is respectively output and enhanced, the spectrum is narrowed, and finally the brightness, the luminous efficiency and the color gamut of the micro-display are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic diagram of a silicon-based OLED micro-display structure provided by the present invention;
description of the symbols:
11-silicon substrate, 12-metal anode layer, 13-organic functional layer, 14-transparent conductive film layer, 15-semi-transparent semi-reflective metal layer, 16-thin film packaging layer, 17-color photoresist layer, 18-glass cover plate, 121-red sub-pixel, 122-green sub-pixel, 123-blue sub-pixel, 131-hole transport layer, 132-light emitting layer, 133-electron transport layer, 171-red CF, 172-green CF and 173-blue CF.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a silicon-based OLED micro-display which can effectively improve the brightness and the color gamut of the OLED micro-display.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic diagram of a silicon-based OLED micro-display provided in the present invention, as shown in fig. 1, a fabricated metal anode layer 12 is on a surface of a silicon-based substrate 11, and includes: the red subpixel 121, the green subpixel 122, and the blue subpixel 123, and the anode material is usually Al, Ag, Ti, Mo, TiN, or a combination thereof, has a high work function, is favorable for injecting holes, and functions as an OLED anode and reflects light.
Disposed over the metal anode layer 12 are organic functional layers 13, respectively comprising: hole transport layer 131, light emitting layer 132, electron transport layer 133. The light-emitting layer 132 includes light-emitting materials of three colors of red, green, and blue, and the OLED device emits white light by the combination thereof. The thickness of the organic functional layer 13 is usually about 100 nm. The refractive index n of the organic material is approximately equal to 1.7.
Disposed on the electron transport layer 133 is a transparent conductive film layer 14 made of a transparent conductive oxide, such as ITO, IZO, AZO, etc. In the visible wavelength range, the light transmittance is more than 80 percent, and the refractive index n is approximately equal to 2.0. Deposited on the organic functional layer 13 by means of a low-temperature magnetron sputtering technique. And forming different thicknesses above the red, green and blue sub-pixels respectively by the techniques of gluing, photoetching, developing and etching. In order to enhance the output of the photons in the red light wavelength range of 600-640nm, the green light wavelength range of 500-550nm and the blue light wavelength range of 450-480nm, the thicknesses of the transparent conductive film layer 14 above the red, green and blue sub-pixels are respectively 65-75nm, 40-53nm and 28-35 nm.
Disposed on the transparent conductive film layer 14 is a semi-transparent and semi-reflective metal layer 15, which is made of common cathode metal for OLED, has a low work function, and is beneficial to electron injection, such as Mg, Ag, Al, Ca or their combination, and has a thickness of 10-20nm and a light transmittance of 30-50%.
The metal anode layer 12 and the semi-transparent semi-reflective metal layer 15 are used as two reflectors which are parallel to each other, and the organic functional layer 13 and the transparent conductive film layer 14 between the two reflectors form a complete F-P type microcavity, so that light is continuously reflected between the two mirrors and finally exits from one semi-reflective side. Because the spontaneous emission of atoms is modulated by the microcavity effect, the photon state density in the microcavity is redistributed, and only light with the wavelength conforming to the specific resonant mode of the microcavity can be emitted in a given direction, so that when photons in the specific wavelength range are coupled and output from one side, the luminous intensity is enhanced, and the luminous spectrum is narrowed.
The resonance modes of the organic microcavity satisfy the following relationship:
2 Leffcosθ＝mλ (1)
where λ is the resonant wavelength, m is the number of mode orders, θ is the internal exit angle corresponding to the external probe angle of microcavity light emission, LeffIs the effective cavity length of the microcavity, and consists of the following parts:
wherein n isi、diAre respectively organic in each layer in the micro-cavityRefractive index and thickness of the film. The first term in equation (2) is the optical thickness of the thin film between the two side electrodes, and the second term results from the phase shift of the reflection at the interface of the organic film and the metal. By combining the formulas (1) and (2), the total cavity length L of the microcavity is showneffCan be adjusted by changing the film thickness d, and the cavity length LeffAnd corresponds to the light-emitting module m and peak lambda of the device, so that the optical thickness L of the cavity can be adjusted by changing the thickness of the film between the electrodes on both sideseffThe position of the emission film m may be changed so that the light output in the corresponding wavelength range is enhanced.
The organic functional layer 13 and the semi-transparent and semi-reflective metal layer 15 are manufactured in the OLED evaporation equipment, so that the thickness of the film layer above each sub-pixel is the same. Therefore, by adjusting the thickness of the transparent conductive film layer 14 below the semi-transparent and semi-reflective metal layer 15, the total cavity length L of the OLED optical micro-cavity above the red, green and blue sub-pixels can be adjustedeff. As long as the total cavity length LeffThe light emission wavelength of corresponding red, green and blue is met, so that the OLED can obtain the effects of enhanced light emission and narrowed spectrum.
Since the wavelengths of light corresponding to red, green and blue become smaller, the formula 2LeffThe cos θ is m λ, and the optical microcavity length corresponding to red, green and blue gradually decreases.
Before the semi-transparent and semi-reflective metal layer 15 is manufactured, the transparent conductive film layer 14 above the red, green and blue sub-pixels is etched to different thicknesses in sequence by using the techniques of gluing, photoetching, developing and etching.
Specifically, the red, green and blue peak wavelength positions of the light emission spectrum of the organic light emitting layer 132 are 620nm, 530nm and 460nm respectively, which are expressed by the formula
The optical thicknesses of the red sub-pixel, the green sub-pixel and the blue sub-pixel corresponding to the transparent conductive film layer 14 are calculated to be 140 nm, 95 nm and 60nm respectively, and the thicknesses of the corresponding actual transparent conductive film layer 14 are calculated to be 70nm, 48nm and 30nm respectively.
Disposed over the transflective metal layer 15 is a thin film encapsulation layer 16, typically aluminum oxide, silicon nitride, an organic film layer, or a combination thereof.
Disposed on the thin film encapsulation layer 16 is a color photoresist layer 17, which includes red CF171, green CF172, and blue CF173, respectively, corresponding to the red subpixels 121, green subpixels 122, and blue subpixels 123 of the lower metal anode layer 12.
Disposed over the color photoresist layer 17 is a cover glass 18 for protecting the underlying film layers.
In summary, the silicon-based OLED micro-display provided by the present invention sequentially deposits the OLED organic functional layer 13 and the transparent conductive film layer 14 on the silicon-based substrate 11 on which the metal anode layer 12 has been fabricated. The transparent conductive film layer 14 above the red sub-pixel 121, the green sub-pixel 122 and the blue sub-pixel 123 is formed to have different thicknesses by sequentially using the processes of glue coating, photoetching, developing and etching. On the basis, a semi-transparent and semi-reflective metal layer 15 is continuously deposited to be used as an OLED cathode. And then manufacturing a thin film packaging layer 16, a color photoresist layer 17 and a glass cover plate 18, and completing the manufacture of the silicon-based OLED micro-display through the processes.
In order to prove the superiority of the invention, a comparison group is arranged, and a comparison OLED micro-display is manufactured as a comparison example, the comparison group device has no transparent conductive film layer, and the rest parts are the same as the device of the invention; by testing the optical performance of the silicon-based OLED micro-display manufactured by the invention and comparison, as shown in Table 1, it can be seen that the brightness of the invention is obviously higher than that of the comparison example, and the red, green and blue color coordinates and the color gamut of the invention are also obviously better than that of the comparison example.
Table 1 comparison of optical performance of the silicon-based OLED microdisplays made by the present invention and comparison
The invention also discloses the following technical effects:
according to the silicon-based OLED micro-display provided by the invention, the transparent conductive film layer is etched to form different thicknesses between the organic functional layer corresponding to the red, green and blue sub-pixels and the metal cathode, so that optical micro-cavities with different cavity lengths are formed, and thus, the light in the red, green and blue wavelength range is respectively enhanced in output and narrowed in spectrum. Finally, the brightness, the luminous efficiency and the color gamut of the micro display are improved.
Compared with a red-green-blue sub-pixel parallel method, the manufacturing method does not use a fine metal mask plate, can also achieve the effect of respectively adjusting the cavity length of the red-green-blue OLED device, is simple, has low requirements on hardware conditions of an evaporator, and is easy to realize.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A silicon-based OLED micro-display is characterized by sequentially comprising from bottom to top: the organic light-emitting diode comprises a silicon-based substrate, a metal anode layer, an organic functional layer, a transparent conductive film layer, a semi-transparent semi-reflective metal layer, a thin film packaging layer, a color photoresist layer and a glass cover plate;
the metal anode layer comprises red sub-pixels, green sub-pixels and blue sub-pixels;
the thicknesses of the parts of the transparent conductive film layer corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel are different;
the metal anode layer, the organic functional layer, the transparent conductive film layer and the semi-transparent semi-reflective metal layer form an F-P type microcavity.
2. A silicon-based OLED micro-display according to claim 1, characterized in that the metal anode layer material is Al, Ag, Ti, Mo, TiN or a combination thereof.
3. A silicon-based OLED micro-display according to claim 1, wherein the organic functional layer comprises: a hole transport layer, a light emitting layer, and an electron transport layer.
4. A silicon-based OLED micro-display according to claim 1, characterised in that the thickness of the organic functional layer is 100nm, the refractive index n ≈ 1.7.
5. The silicon-based OLED microdisplay of claim 1 in which the transparent conducting film layer is made of a transparent conducting oxide, with light transmittance > 80% and refractive index n ≈ 2.0.
6. A silicon-based OLED micro-display according to claim 1, wherein the transparent conducting film layer has respective thicknesses of 65-75nm, 40-53nm, 28-35nm for the red sub-pixel, the green sub-pixel and the blue sub-pixel respectively.
7. A silicon-based OLED microdisplay according to claim 1 in which the transflective metal layer is 10-20nm thick and has a light transmittance of 30-50%.
8. The silicon-based OLED microdisplay of claim 1 in which the color photoresist layer comprises red, green and blue CFs that have one-to-one correspondence with underlying red, green and blue subpixels.
9. A silicon-based OLED micro-display according to claim 1, characterized in that the material of the thin film encapsulation layer is alumina, silicon nitride, organic film layer or a combination thereof.
10. A silicon-based OLED micro-display according to claim 1, wherein the transparent conductive film layer is fabricated by:
and sequentially utilizing the processes of gluing, photoetching, developing and etching to form different thicknesses on the transparent conductive film layers above the red sub-pixel, the green sub-pixel and the blue sub-pixel.
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| CN202111614304.3A CN114335099A (en) | 2021-12-27 | 2021-12-27 | Silicon-based OLED micro-display |
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