CN105191501A - Display device, method for manufacturing same, and electronic device - Google Patents

Display device, method for manufacturing same, and electronic device Download PDF

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Publication number
CN105191501A
CN105191501A CN201480014944.2A CN201480014944A CN105191501A CN 105191501 A CN105191501 A CN 105191501A CN 201480014944 A CN201480014944 A CN 201480014944A CN 105191501 A CN105191501 A CN 105191501A
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China
Prior art keywords
pixel
display unit
reflecting surface
dielectric film
angle
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CN201480014944.2A
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CN105191501B (en
Inventor
菊地晃司
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A display device according to the present invention comprising a plurality of pixels which produce mutually different emission light, and insulation films which are provided between the plurality of pixels and have reflection surfaces reflecting emission light, where the angle of the reflection surfaces of the insulation films is set per pixel.

Description

Display device, the method manufacturing this display device and electronic equipment
Technical field
The disclosure relates to a kind of by using organic electroluminescent (EL) phenomenon to carry out luminous display unit, manufacture the method for described display unit and comprise the electronic equipment of described display unit.
Background technology
Because the accelerated development of information and the communications industry, therefore demand has high performance display unit.Especially, because follow-on display unit has the advantage as self-emission display apparatus, not only have wide visual angle and excellent contrast but also have response speed fast, therefore organic el device has attracted concern.Organic el device (light emitting devices) has a configuration, and the multilayer comprising light-emitting layer is stacked.More specifically, organic el device such as can be configured to the wiring layer being connected to TFT (thin-film transistor), and described TFT controls the driving of light emitting devices, the anode of injected hole, light-emitting layer, the negative electrode of injection electronics, resin, chromatic filter layer and pixel separation layer.Light emitting devices is by being injected into light-emitting layer respectively from the hole of anode and negative electrode and electronics and coming luminous by described hole and electron recombination.One of sandwiching therebetween in the anode of light-emitting layer and negative electrode also plays reflective mirror, can produce different interference effects according to light emission angle or wavelength.Therefore, the light emissive porwer of light emitting devices has great difference along with light emission angle and wavelength.
Such as, when light emission angle is large, utilizing emitted light is propagated in a device, is not allowed to leave from panel.Therefore, such as, in patent documentation 1, disclose a kind of display unit, the composition light being wherein leaked to dielectric film is returned to organic layer as dielectric film by using two kinds of optical thin film stack with mutual different refractivity, and multiple light emitting devices is separated from each other by described dielectric film.In addition, in patent documentation 2, disclose a kind of display unit, wherein the light path that comprises the light emitting devices of resonant structure is set for each device.
Quoted passage list
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Application Publication No.2010-153127
Patent documentation 2: Japanese Unexamined Patent Application Publication No.2006-30250
Summary of the invention
But, in the display unit in patent documentation 1, although existence luminous efficiency improves the problem that colorrendering quality changes along with visual angle.In addition, in the display unit in patent documentation 2, although there is the problem that colorrendering quality improves manufacturing process complexity.
Therefore, can it is desirable that, provide a kind of can improve colorrendering quality by straightforward procedure and the display unit suppressing brightness to change, the method manufacturing described display unit and electronic equipment.
Display unit according to an embodiment of this technology comprises: be configured to launch mutually different radiative multiple pixels; And to be arranged between described multiple pixel and the dielectric film had relative to the radiative plane of reflection, the angle pin of the described reflecting surface of wherein said dielectric film is arranged each in described pixel.
Method according to the manufacture display unit of an embodiment of this technology comprises: arrange that multiple being configured to launches mutual different radiative pixel; And formed between described multiple pixel and have relative to the described radiative plane of reflection and the angle pin of wherein said reflecting surface dielectric film that each in described pixel is arranged.
Electronic equipment according to an embodiment of this technology comprises above-mentioned display unit.
In the described display unit of the described embodiment according to this technology, the method manufacturing described display unit and described electronic equipment, the described dielectric film with reflecting surface is arranged between described pixel, and dielectric film is formed as the described angle of the described reflecting surface arranging described dielectric film for each pixel; Therefore, the utilizing emitted light in each pixel with high light reflectivity intensity can reflect along any direction.
According to the described display unit of the described embodiment of this technology, the method manufacturing described display unit and described electronic equipment, described dielectric film is formed as arranging described reflecting surface angle for each pixel; Therefore, the radiative transmit direction with high light reflectivity intensity in each pixel is conditioned.Therefore, the colorrendering quality of each pixel can be improved.In addition, allow to suppress light in each pixel to launch the change of brightness.
Accompanying drawing explanation
Fig. 1 is the plane graph of the display unit configuration according to an embodiment of the present disclosure.
Fig. 2 is the profile of an example of a pixel of the described display unit shown in Fig. 1.
Fig. 3 A is the schematic diagram of radiative light path in the display unit according to a comparative example.
Fig. 3 B is the characteristic pattern of relation between the visual angle of the described display unit shown in Fig. 3 A and brightness.
Fig. 4 A is the schematic diagram of radiative light path in the described display unit shown in Fig. 1.
Fig. 4 B is the characteristic pattern of relation between the visual angle of the described display unit shown in Fig. 1 and brightness.
Fig. 5 is the profile that Fig. 1 illustrates another example of a pixel of described display unit.
Fig. 6 is the allocation plan of the described display unit shown in Fig. 1.
Fig. 7 is the figure of an example of the pixel-driving circuit of the described display unit shown in Fig. 6.
Fig. 8 A is the profile of an example of the method describing the described display unit shown in shop drawings 1.
Fig. 8 B is the profile of the technique after Fig. 8 A is shown.
Fig. 8 C is the profile of the technique after Fig. 8 B is shown.
Fig. 9 is the profile of another example of the method for the described display unit of diagram shown in shop drawings 1.
Figure 10 A is the profile of the display unit according to amendment amendment example 1.
Figure 10 B is the plane graph of the described display unit shown in Figure 10 A.
Figure 11 shows the example of the primitive shape (A) to (D) according to amendment amendment example 2.
Figure 12 is an example of the plane graph of the configuration that the display unit using the described primitive shape (C) shown in Figure 11 is shown.
Figure 13 A is the characteristic pattern of the change that visual angle and brightness in a comparative example are shown.
Figure 13 B is the characteristic pattern of the change that visual angle and brightness in example 1 of the present disclosure are shown.
Figure 14 A is the characteristic pattern of the change that visual angle and brightness in a comparative example are shown.
Figure 14 B is the characteristic pattern of the change that visual angle and brightness in example 2 of the present disclosure are shown.
Figure 15 A is the characteristic pattern of the change that visual angle and brightness in a comparative example are shown.
Figure 15 B is the characteristic pattern of the change that visual angle and brightness in example 3 of the present disclosure are shown.
Figure 16 is the characteristic pattern of the change that visual angle and brightness in example 4 of the present disclosure are shown.
Figure 17 A uses described pixel that the stereogram of the outward appearance on the leading flank of the application example 1 of described display unit is shown according to above-described embodiment etc.
Figure 17 B uses described pixel that the stereogram of the outward appearance on the trailing flank of the application example 1 of described display unit is shown according to above-described embodiment etc.
Figure 18 is the stereogram of the outward appearance that application example 2 is shown.
Figure 19 A is the stereogram that the outward appearance of watching from the leading flank of application example 2 is shown.
Figure 19 B is the stereogram that the outward appearance of watching from the trailing flank of application example 2 is shown.
Figure 20 is the stereogram of the outward appearance that application example 3 is shown.
Figure 21 is the stereogram of the outward appearance that application example 4 is shown.
Figure 22 A is front view, left side view, right side view, top view and bottom view wherein under application example 5 closed condition.
Figure 22 B is front view wherein under application example 5 open mode and end view.
Embodiment
By reference to accompanying drawing, embodiments more of the present disclosure will describe in detail following.It should be noted, specification provides in the following order.
1. embodiment
1-1. basic configuration
The configured in one piece of 1-2. display unit
1-3. manufacture method
1-4. function and effect
2. amendment amendment example
Amendment amendment example 1 (example to each pixel adjustment aperture opening ratio)
Amendment amendment example 2 (example of primitive shape)
Amendment amendment example 3 (regulating an example of the reflectivity rate of dielectric film)
3. example
4. application example (example of electronic equipment)
(1. embodiment)
Fig. 1 shows an example of the planar configuration of display unit according to an embodiment of the invention (display unit 1A).This display unit 1A is used in the view finder of camera or head mounted display etc., and can have a configuration, and wherein multiple pixel 2 is arranged with point in viewing area 110.Each sub-pixel that can be configured to three kinds of colors in this pixel 2, i.e. red pixel 2R, green pixel 2G and blue pixel 2B, and sub-pixel 2R, 2G and 2B comprise the monochromatic light emitting devices (generate red monochromatic red emission electro-optical device 10R (for red pixel 2R) respectively, generate green monochromatic green emitted electro-optical device 10G (for green pixel 2B) and generate blue monochromatic blue light emitting device 10B (for blue pixel 2B)) (all reference diagrams 2) generating and correspond to it.
(1-1 basic configuration)
Fig. 2 shows the section configuration of the pixel of shown in Fig. 12.This pixel 2 is configured to the sub-pixel of three kinds of colors, i.e. as above red pixel 2R, green pixel 2G and blue pixel 2B, and wherein each has the light emitting area separated by dielectric film 13 (13RG, 13GB and 13BR).Here, it is round-shaped that each light emitting area in sub-pixel 2R, 2G and 2B can have such as shown in Fig. 1.
This dielectric film 13 is alleged partition walls, and this partition wall is mutually electrically separated by light emitting devices 10R, 10G and 10B, and be provided with as sub-pixel 2R, 2G and 2B each in the opening portion 13A of light emitting area.This will in rear detailed description, organic layer 14 is arranged in the 13A of opening portion, this organic layer 14 comprises light-emitting layer 14C (red light emission layer 14CR, green light emission layer 14CG and blue color-emitting layers 14CB), is configured to correspond in light emitting devices 10R, 10G and 10B.The example of the material of dielectric film 13 can include but not limited to the organic material of such as polyimides, phenolic resins and acrylic resin, and such as can use the combination of organic material and inorganic material.The example of inorganic material can comprise SiO 2, SiO, SiC and SiN.This dielectric film 13 such as can be formed as the monofilm be made up of above-mentioned organic material.When organic material and inorganic material are combined, the laminated configuration of organic film and inoranic membrane can be adopted.
The section surfaces of this dielectric film 13 can have such as trapezoidal shape or rectangular shape, and the side surface of this dielectric film 13 is as launching from the reflecting surface of utilizing emitted light LR, LG and LB of light-emitting layer 14CR, 14CG and 14CB.Utilizing emitted light LR, LG and LB by reflective surface reflects, and can upwards launch, such as by the length replaced shown in Fig. 2 with short dotted line indicated by.
In this embodiment, as shown in Figure 2, this dielectric film 13 has the reflecting surface angle (θ) for each side surface is arranged, and red pixel 2R, green pixel 2G and blue pixel 2B are surrounded by this side surface.At this, this reflecting surface angle (θ) can be such as the angle that the top surface of the first electrode 12 and the side surface of this dielectric film 13 are formed, and can be such as from 45 ° to 90 °, is included both 45 ° and 90 °.
Different interference effects is produced according to light emission angle and wavelength from each utilizing emitted light in light-emitting layer 14CR, 14CG and 14CB.Therefore, each and different according in light emitting devices 10R, 10G and 10B of the light transmit direction with the light of high light emissive porwer.Fig. 3 A schematically illustrates normally used display unit 100 and configures from the section of utilizing emitted light LR, LG and LB of light emitting devices 110R, 110G and 110B.It should be noted, solid line refers to the light of utilizing emitted light LR, LG and the LB with high light emissive porwer, and dotted line refers to the light of utilizing emitted light LR, LG and the LB with lower light emission intensity.
In display unit 100, the dielectric film 113 be arranged between light emitting devices 110R, 110G and 110B is formed uniformly.In other words, the dielectric film 113 be arranged between light emitting devices 110R, 110G and 110B is formed as making its reflecting surface angle (θ) can be equal.As mentioned above, each light launched in light-emitting layer 114CR, 114CG and 114CB of light emitting devices 110R, 110G and 110B has different light emissive porwers according to wavelength.Therefore, as illustrated in Fig. 3 A, launch from each utilizing emitted light of light-emitting layer 114CR, 114CG and 114CB (alleged there is the light of high light emissive porwer and there is the light of low emissive porwer) by the reflecting surface of dielectric film 113 according to each wavelength reflection on different directions.Therefore, the change of colour cast in the visual angle between light emitting devices 110R, 110G and 110B shown in Fig. 3 B and brightness will be there is.
Fig. 4 A schematically illustrates the transmit direction of utilizing emitted light LR, LG and LB in display unit 1A in this embodiment.In this embodiment, as mentioned above, each in sub-pixel 2R, 2G and 2B is provided as to the inclination angle of the dielectric film 13 relative to the reflecting surface of reverberation LR, LG and LB, i.e. reflecting surface angle (θ).Therefore, as shown in Figure 4 A, utilizing emitted light LR, LG of having high light emissive porwer are launched on substantially identical direction with the light of LB.In other words, as illustrated in Fig. 4 B, light emitting devices 10R, 10G and 10B have basic uniform viewing angle characteristic.Like this, the colour cast between sub-pixel 2R, 2G and 2B and the change of brightness are eliminated.
It should be noted, not only change by the radiative wavelength that reflects but also according to the film thickness of the first electrode 12 and the organic layer 14 that comprises light-emitting layer 14C according to treating relative to the best reflecting surface angle (θ) of the dielectric film 13 of utilizing emitted light LR, LG and LB, this film thickness configures the material of each light emitting devices 10 and respective layer.Therefore, when an example is by using following formula (1) to be formed by the approximation (θ) calculating each reflecting surface angle (θ) in light emitting devices 10R, 10G and 10B, angle corresponding when wherein light emissive porwer is strong is φ, so the reflecting surface angle (θ) of each dielectric film 13 is conditioned further, colour cast can be reduced further by visual angle.
(mathematic(al) representation) θ=90-φ/2 (°) ... (1)
For this embodiment, can be formed by photoetching by using such as photosensitive resin each dielectric film 13 with different reflecting surface angle (θ) in sub-pixel 2R, 2G and 2B, this will in rear detailed description.More specifically, can by using the photomask or photoetching agent pattern that have and change light transmittance in a stepwise manner for the treatment of any reflecting surface of formation, this process is by regulating corresponding Sidewall angles in conjunction with typical dry etching.
It should be noted, in this embodiment, the reflecting surface of dielectric film 13 is adjusted to best angle for each in red pixel 2R, green pixel 2G and blue pixel 2B; But the reflecting surface angle (θ) of dielectric film 13 can be designed so that the reflecting surface angle of two in this sub-pixel can be equal.More specifically, such as, for the display unit 1B shown in Fig. 5, the angle (θ) of the reflecting surface of red pixel 3R and blue pixel 3B can be equal, and the angle of the reflecting surface of dielectric film 13 (θ) can design for red pixel 3R and blue pixel 3B with for green pixel 3G, to regulate each radiative transmit direction.When arranging angle of reflection for each in pixel 3R, 3G and 3B, obtain higher colorrendering quality; But even if the reflecting surface angle (θ) of two in three sub-pixels is adjusted to equal, colorrendering quality is also enhanced fully.In addition, the formation of the reflecting surface angle of dielectric film 13 can be simplified further.
And, in fig. 2, show the top surface of wherein dielectric film 13 and the state driving substrate 10 one-tenth level; But this embodiment is not limited, the top surface of dielectric film 13 can have concavo-convex or curved surface.And the thickness of dielectric film 13 can be greater than the thickness of the first electrode 12, and preferably such as can reflex to a thickness in top surface direction along the light of the radiative in-plane from light-emitting layer 14C.More specifically, the distance from the top surface of the first electrode 12 to the top surface of partition wall 13 can be 1 μm or larger.It should be noted, the upper limit of this distance can preferably but be not defined in the size being equal to or less than a such as pixel especially.
(configured in one piece of 1-2. display unit)
Fig. 6 shows the configuration of display unit 1A.As mentioned above, this display unit 1A uses as small size to the display unit of middle size of the view finder of the camera of the organic el device such as comprised as light emitting devices 10R, 10G and 10B, and the signal-line driving circuit 120 that such as can comprise as the driver for showing around the image of viewing area 110 and scan line drive circuit 130.
Pixel-driving circuit 140 is arranged in viewing area 110.Fig. 7 shows an example of pixel-driving circuit 140.Pixel-driving circuit 140 is the active driving circuits being formed at below the first electrode 12, and this will in rear description.In other words, pixel-driving circuit 140 comprises driving transistors Tr1 and write transistor Tr2, capacitor Cs (keeping capacitor) between transistor Tr1 and Tr2 and and the light emitting devices 10R (or 10G or 10B) that is connected in series of transistor Tr1 between the first power line (Vcc) and second source line (GND).Each in driving transistors Tr1 and write transistor Tr2 is configured to typical thin-film transistor, and thin-film transistor such as can have but not only have and is inverted interconnected (alleged bottom gate type) or interconnected (top gate type).
In pixel-driving circuit 140, multiple holding wire 120A is along row to setting, and multiple scan line 130A is along row to setting.A crosspoint of each holding wire 120A and each scan line 130A corresponds to one (sub-pixel) in light emitting devices 10R, 10G and 10B.Each and signal-line driving circuit 120 in holding wire 120A is connected, and picture signal is sent to the source electrode of write transistor Tr2 by holding wire 120A from signal-line driving circuit 120.Each and scan line drive circuit 130 in scan line 130A is connected, and sweep signal is sent to the grid of write transistor Tr2 by scan line 130A subsequently from scan line drive circuit 130.
Like that as shown in Figure 2, each in light emitting devices 10R, 10G and 10B comprise as anode the first electrode 12, dielectric film 13, comprise the organic layer 14 of light-emitting layer 14C and the second electrode 15 as negative electrode, they are stacked up by from driving substrate 11 with this order, drive substrate 11 to be provided with driving transistors Tr1 and the complanation dielectric film (not shown) of above-mentioned pixel-driving circuit 140.Driving transistors Tr1 is electrically connected to the first electrode 12 by the connecting hole (not shown) be arranged in this Planarized insulator film.
This light emitting devices 10R, 10G and 10B are coated with protective layer 16, and sealing substrate 19 uses the tack coat 17 be positioned between the two to be adhered on whole protective layer 16.It should be noted, sealing substrate 19 comprises colored filter 18A and black matrix" 18B, in colored filter 18A, the colored filter (Red lightscreening plate 18AR, green color filter 18AG and blue color filter 18AB) of corresponding color is arranged on light emitting devices 10R, 10G and 10B respectively.Protective layer 16 can by silicon nitride (SiN x), silica or metal oxide etc. make.Tack coat 17 can be such as made up of thermosetting resin or ultraviolet curable resin.
First electrode 12 also plays reflector, and in order to improve light emission effciency, the first electrode 12 can desirably have reflectivity high as far as possible.Especially, when the first electrode 12 uses as anode, the first electrode 12 can be desirably made up of the material with high hole injection efficiency.For the first electrode 12, such as, its thickness along stacked direction (hereinafter referred to as " thickness ") but from 100nm to 1000nm, comprise 100nm and 1000nm, such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), the simple substance of metallic element of tungsten (W) or silver (Ag) or its alloy can be used.The nesa coating of such as indium and tin-oxide (ITO) can be arranged on the surface of the first electrode 12.It should be noted that, although allow high reflectance for as the first electrode 12 by providing suitable hole injection layer, wherein to there is oxide-film from the teeth outwards and the material of hole injection barrier that caused by little work function even will cause a problem.
Dielectric film 13 is configured to guarantee insulation between the first electrode 12 and the second electrode 15 and is configured to light emitting area to be separated into the shape of expectation, and can such as be made up of photosensitive resin.Dielectric film 13 is arranged around the first electrode 12, and from the region that the dielectric film 13 of the first electrode 12 exposes, i.e. the opening portion 13A of dielectric film 13, as light emitting area.In this embodiment, as mentioned above, the side surface of dielectric film 13 has an inclination angle, is the reflecting surface angle (θ) of each setting in red pixel 2R, green pixel 2G and blue pixel 2B.It should be noted, organic layer 14 and the second electrode 15 are also arranged on dielectric film 13; But only have light emitting area utilizing emitted light.
Organic layer 14 such as can have a configuration, and wherein hole injection layer 14A, hole transmission layer 14B, light-emitting layer 14C, electron transfer layer 14D and electron injecting layer 14E are with stacked from the order of the first electrode 12.Layer except light-emitting layer 14C can be arranged as required.Organic layer 14 has different configurations for each in the glow color of light emitting devices 10R, 10G and 10B.Hole injection layer 14A is resilient coating, to improve hole injection efficiency and to stop leakage.Hole transmission layer 14B is configured to the hole transport efficiency bringing up to light-emitting layer 14C.Light-emitting layer 14C is configured to carry out utilizing emitted light by complex response in the electronics of applied electric field and hole.Electron transfer layer 14D is configured to the electric transmission efficiency bringing up to light-emitting layer 14C.Electron injecting layer 14E is configured to improve electron injection efficiency.
The hole injection layer 14A of light emitting devices 10R can have the thickness of such as 5nm to 300nm, comprises 5nm and 300nm, and can such as be made up of triphenylene.The hole transmission layer 14B of light emitting devices 10R can have the thickness of such as 5nm to 300nm, comprises 5nm and 300nm, and can such as be made up of two [(N-naphthyl)-N-phenyl] benzidine (α-NPD).The light-emitting layer 14C of light emitting devices 10R can have the thickness of such as 10nm to 100nm, comprise 10nm and 100nm, and can by 2 with 40% volume, the oxine aluminium complex (Alq3) that two [4-[N-(4-methoxyphenyl)-N-phenyl] aminostyryl] naphthalene-1, the 5-dintrile (BSN-BCN) of 6-mixes is made.The electron transfer layer 14D of light emitting devices 10R can have the thickness of such as 5nm to 300nm, comprises 5nm and 300nm, and can such as be made up of Alq3.The electron injecting layer 14E of light emitting devices 10R can have the thickness of such as approximately 0.3nm, and can by LiF or Li 2o etc. make.
Second electrode 15 can have the thickness of such as approximately 10nm, and can be made up of the alloy of aluminium (Al), magnesium (Mg), calcium (Ca) or sodium (Na).Particularly, the alloy (Mg-Ag alloy) of magnesium and silver can be preferred, because Mg-Ag alloy has conductivity and little absorptivity in the film.Although the magnesium in Mg-Ag alloy is not subject to concrete restriction with the ratio of silver, this ratio can preferably in Mg: Ag=20: 1 to 1: 1 scope, and 20: 1,1: 1 is included in Film Thickness Ratio.In addition, the material of the second electrode 15 can be the alloy (Al-Li alloy) of aluminium (Al) and lithium (Li).
Second electrode 15 also can play translucent reflective layer.When the second electrode 15 has the function as translucent reflective layer, light emitting devices 10R has cavity resonator structure MC1, and cavity resonator structure MC1 make transmitting from the light of light-emitting layer 14C can between the first electrode 12 and the second electrode 15 resonance.In cavity resonator structure MC1, interface between the first electrode 12 and organic layer 14 is as reflecting surface P1, interface between intermediate layer 18 and electron injecting layer 14E is as Transflective surface P2, organic layer 14 as resonance portion, and cavity resonator structure MC1 make transmitting from the light of light-emitting layer 14C by resonance and from Transflective surface P2 extract light.When cavity resonator structure MC1 is included, launches and cause multi interference from the photoconduction of light-emitting layer 14C, to reduce the half width extracting spectrum from semi-penetrate through reflective surface P2, thus improve peak strength.In other words, the light radiation intensity along front is enhanced to improve radiative colorimetric purity.And the external incident light carrying out self sealss substrate 19 is attenuated by multi interference, and the outside light reflectance in light emitting devices 10R, 10G and 10B is by being reduced to minimum in conjunction with colored filter 23.
(1-3. manufacture method)
Next, will Fig. 8 A to 8C and Fig. 9 be used to describe the method manufacturing display unit 1A.
First, the pixel-driving circuit 140 comprising the first electrode 12 and driving transistors Tr1 is formed in the driving substrate 11 of being made up of above-mentioned material, and then, the dielectric film of complanation is formed by the whole surface of use sense photopolymer resin coating pixel-driving circuit 140.This Planarized insulator film is patterned as predetermined shape by exposing with development together with the formation of this connecting hole, and then burned.
Subsequently, as illustrated in Fig. 8 A, the first electrode 12 be made up of above-mentioned material is such as formed by sputtering method, first electrode 12 selectively removes with separated each in light emitting devices 10R, 10G and 10B by wet etching, then, the whole surface of substrate 11 is driven to use the photosensitive resin to be used as dielectric film 13 to apply.
Next, opening portion is such as set to correspond to light emitting area by photoetching, and this photosensitive resin that then burns is to form dielectric film 13.More specifically, as illustrated in Fig. 8 B, each photomask 21A with different light transmission rates in pixel 2R, 2G and 2B is formed on photosensitive resin, then exposes, thus forms the photoetching agent pattern 22 with specific inclination angle.It should be noted, photomask 21A is such as by using photoresistance etchant resist 21b carry out the basal surface of cover glass substrate 21a and formed in formation crack, pre-position.Next, dry etching is used as the photoetching agent pattern 22 of mask to carry out, to form the dielectric film 13 of the mutually different reflecting surface angle (θ) had as shown in Fig. 8 C.
It should be noted, use the photomask 21A that wherein predetermined crack is formed in the position corresponding to pixel 2R, 2G and 2B here; But photomask 21A is not limited thereto, such as, shown in Fig. 9, dielectric film 13 can use wherein pitch angle shaped to become to obtain the photomask 21B process of predetermined light transmission rate.
Next, the hole injection layer 14A be made up of above-mentioned material, hole transmission layer 14B, the light-emitting layer 14C and electron transfer layer 14D with the organic layer 14 of above-mentioned thickness are such as formed by evaporation.Next, second electrode 15 be made up of above-mentioned material with above-mentioned thickness is such as formed by evaporation.Therefore, light emitting devices 10R, 10G and 10B as shown in Fig. 2 and 5 are formed.
Next, the protective layer 16 be made up of above-mentioned material is such as formed on light emitting devices 10R, 10G and 10B by CVD (chemical vapour deposition (CVD)) method or sputtering method.Next, tack coat 17 is formed on protective layer 16, and the sealing substrate 19 comprising colored filter 18A and black matrix" 18B uses the tack coat 17 be positioned between the two to be glued on protective layer 16.Like this, display unit 1A or 1B shown in Fig. 2 or 5 completes.
In this display unit 1A, sweep signal is sent to each pixel 12 by the grid of transistor Tr2 from scan line drive circuit 130, and this picture signal is by being sent to holding capacitor Cs to be retained on the write transistor Tr2 in keeping capacitor Cs from signal-line driving circuit 120.In other words, the Open-closure control response of transistor Tr1 keeps the signal in transistor Cs to carry out in being retained in, and therefore drive current Id is injected in light emitting devices 10R, 10G and 10B, carry out utilizing emitted light to make light emitting devices 10R, 10G and 10B by the compound of hole and electronics.This light is multiple reflections between the first electrode 12 and the second electrode 15, or pass through interfere mutually reinforcement with launching from the light of light-emitting layer 14C from the reverberation of the first electrode 12, light is through the second electrode 15, colored filter 23 and seal substrate 19 to be extracted.
(1-4. function and effect)
In this embodiment, the side surface of the dielectric film 13 respective sub-pixel 2R, 2G and 2B are separated from each other as relative to the reflecting surface launched from the light of light-emitting layer 14C, arranges reflecting surface angle (reflecting surface angle (θ)) for each in sub-pixel 2R, 2G and 2B.The photomask that there is predetermined light transmission rate corresponding to each position in pixel 2R, 2G and 2B can be used in formed by implementing photoetching for each dielectric film 13 with different reflecting surface angles (θ) in sub-pixel 2R, 2G and 2B.Therefore, particularly, the utilizing emitted light of different high emission luminous intensities can reflect along any direction according to each radiative each wavelength in light emitting devices 10R, 10G and 10B to have its transmit direction.More specifically, have and reflex to substantially identical direction from sub-pixel 2R, 2G with the utilizing emitted light with high emission luminous intensity of 2B.
Like this, in the method for display unit 1A in this embodiment and manufacture display unit, separating sub-picture elements 2R, 2G and 2B also use the photomask with predetermined light transmission rate to be formed by photoetching as the inclined surface (side surface) of the dielectric film 13 relative to the radiative reflecting surface from light-emitting layer 14C.Therefore, can be easy to be formed for each inclined surface with different angle of reflection in pixel 2R, 2G and 2B.In other words, the inclined surface of the dielectric film 13 of respective sub-pixel 2R, 2G and 2B can be formed separately respectively in the angle of utilizing emitted light LR, LG and LB being suitable for light emitting devices 10R, 10G and 10B, more specifically, the angle (reflecting surface angle (θ)) that can be reflected to substantially identical reflection direction place at utilizing emitted light sub-pixel 2R, 2G and each wavelength of 2B to different high emission luminous intensities is formed separately respectively.Therefore, being suppressed of the colour cast of sub-pixel 2R, 2G and 2B, colorrendering quality is enhanced.
And the utilizing emitted light with high light emissive porwer can use effectively; Therefore, the change of each brightness in sub-pixel 2R, 2G and 2B is suppressed, and brightness is enhanced.And because light emission effciency is enhanced, the display unit therefore with low power consumption can be provided.
(4. revising example)
The amendment example of above-described embodiment is below described.In the following description, for the identical numeral instruction of the same parts in above-described embodiment, and will no longer describe.
(amendment example 1)
Figure 10 A schematically illustrates the section configuration configuring the pixel 4 (sub-pixel 4R, 4G and 4B) of display unit 1C according to amendment example 1, Figure 10 B schematically illustrates the light emitting area of respective sub-pixel 4R, 4G and 4B, i.e. the size of the opening of opening portion 13AR, 13AG and 13AB.Except the mutual difference of aperture opening ratio of the light emitting area (i.e. opening portion 13AR, 13AG and 13AB of pixel 4R, 4G and 4B) of light emitting devices 10R, 10G and 10B, display unit 1C has those configurations being similar to above-mentioned display unit 1A and 1B.
For the output of respective pixel 4R, 4G and 4B, the output of blue pixel 4B is normally high, and the output of red pixel 4R is normally low.This is caused by the performance of the material of light-emitting layer 14CR, 14CG and the 14CB forming light emitting devices 10R, 10G and 10B.Have in the display unit of different output for each in pixel 4R, 4G and 4B, the change of colorrendering quality (namely alleged painted) may be caused by visual angle.
In other one side, in this amendment example, be the aperture opening ratio of opening portion 13AR, 13AG and 13AB of each pixel adjustment dielectric film 13.More specifically, such as, based on the opening portion 13AG of green pixel 4G, the size of the opening portion 13AR of the dielectric film 13 in red pixel 4R increases, and the size of the opening portion 13AB of the dielectric film 13 in blue pixel 4B reduces.In other words, as illustrated in Figure 10 B, the aperture opening ratio of red pixel 4R, green pixel 4G and blue pixel 4B diminishes (this light emitting area narrows) by this order.By making in such mode, the brightness of pixel 4R, 4G with 4B is consistent becomes consistent to the light emission level of RGB (RGB), thus suppresses painted by visual angle.
(amendment example 2)
Figure 11 schematically illustrates other example of the primitive shape of the pixel 2 to 4 configuring above-mentioned display unit 1A to 1C.In above-described embodiment and above-mentioned amendment example 1, wherein the shape (i.e. this light emitting area) of pixel 2 is that circular situation is described; But this shape is not limited thereto.Such as, this shape can as illustrated in Figure 11 (A) be oval, be rectangle as illustrated in Figure 11 (B) and (C) or be basic rectangle as illustrated in Figure 11 (D).As above-described embodiment round-shaped in, respective pixel with arrange; Such as, but when when have the vertically long rectangular shape illustrated as Figure 11 (C) in pixel 2, as shown in fig. 12, pixel can with arranged in matrix.
(amendment example 3)
It should be noted, in the dielectric film 13 of the above-mentioned display unit 1A to 1C of configuration, except for except each design reflectivity surface angle (θ) in sub-pixel 2R, 2G and 2B, the composition material of this dielectric film can also be changed.Such as, dielectric film can use the material with different refractivity to be formed, thus regulates from each radiative transmit direction in light-emitting layer 14CR, 14CG and 14CB.
The material with different refractivity can comprise following material.The example with the material of high index of refraction can comprise silicon nitride (Si 3n 4), aluminium oxide (Al 2o 3), chromium oxide (Cr 2o 3), gallium oxide (Ga 2o 3), hafnium oxide (HfO 2), nickel oxide (NiO), magnesium oxide (MgO), tin indium oxide (ITO), lanthanum-oxides (La 2o 3), niobium oxide (Nb 2o 5), tantalum oxide (Ta 2o 5), yittrium oxide (Y 2o 3), tungsten oxide (WO 3), titanium monoxide (TiO), titanium dioxide (TiO 2) and zirconia (ZrO 2).The example with the material of low-refraction can comprise silica (SiO 2), aluminum fluoride (AlF 3), calcirm-fluoride (CaF 2), cerium fluoride (CeF 3), lanthanum fluoride (LaF 3), lithium fluoride (LiF), magnesium fluoride (MgF 2), neodymium fluoride (NdF 3) and sodium fluoride (NaF).
The example of particular combination can comprise silicon nitride (Si 3n 4) and silica (SiO 2) combination.
(3. example)
Example according to display unit of the present disclosure will in following description.
(example 1)
In this example, as the example of standard, manufacture the display unit 1A with pixel arrangement described in the above-described embodiments.More specifically, in light emitting devices 10R, 10G and 10B, the film thickness comprising the respective layer of light-emitting layer 14C is identical in sub-pixel 2R, 2G and 2B.In this case, example 1 (comparative example) and example 2 (example) is manufactured.In example 1, the reflecting surface angle (θ) of the dielectric film 13 of sub-pixel 2R, 2G and 2B is identical, in example 2 (example), the reflecting surface angle (θ) of dielectric film 13 regulates for each in sub-pixel 2R, 2G and 2B, more specifically, the reflecting surface angle (θ) of the dielectric film 13 of green pixel 2G is 70 °, and the reflecting surface angle of red pixel 2R and blue pixel 2B is 80 °.Measure the brightness at each each visual angle place in example 1 and example 2.
Figure 13 A and 13B respectively illustrates the characteristic pattern of the relation between visual angle in example 1 and 2 and brightness (intensity).Can find in figure 13a, green emitted light, altering a great deal between red emission light and blue emission light, and in Figure 13 B, the value of the brightness at each visual angle place in pixel 2R, 2G and 2B is substantially equal.In addition, compared with Figure 13 A, find that the brightness at the visual angle place at 0 ° greatly improves.
(example 2)
This example is different from above-mentioned example part and is that the thickness of the first electrode 12 changes for each light emitting devices.Figure 14 A shows the characteristic pattern as relation between the visual angle of the example 3 of comparative example and brightness, and Figure 14 B is the characteristic pattern of the relation between the visual angle of the example 4 illustrated as an example and brightness.It should be noted, the reflecting surface angle (θ) of the dielectric film 13 in the pixel 2R, 2G and 2B of example 4 is 80 °, 70 ° and 70 ° respectively.
As can be seen from Figure 14 A, the brightness through improving obtains by regulating the film thickness of the first each electrode 12 in pixel 2R, 2G and 2B; But the change of the visual angle place brightness between pixel 2R, 2G and 2B is obvious.Another one aspect is as can be seen from Figure 14 B, for the example 2 of above-mentioned example 1, substantially equal at the brightness value at each visual angle place of sub-pixel 2R, 2G and 2B.
(example 3)
This example is different from above-mentioned example, because the film thickness of light-emitting layer 14C is changed.Figure 15 A shows the characteristic pattern as relation between the visual angle of the example 5 of comparative example and brightness, and Figure 15 B shows the characteristic pattern of relation between the visual angle of example 6 as an example and brightness.It should be noted, the reflecting surface angle (θ) of the dielectric film 13 in the pixel 2R, 2G and 2B of example 6 is 80 °, 70 ° and 70 ° respectively.
As can be seen from Figure 15 A, the brightness through improving obtains by regulating the film thickness of the first each electrode 14 in pixel 2R, 2G and 2B; But the change of the visual angle place brightness between pixel 2R, 2G and 2B is obvious.In another one, as can be seen from Figure 14 B, for the example 2 and 4 of above-mentioned example 1, substantially equal at the brightness value at each visual angle place of sub-pixel 2R, 2G and 2B.
As can be seen from example 2 and 3, even if change the thickness of first electrode 12 of light emitting devices 10R, 10G and 10B for respective sub-pixel, the colour cast of being undertaken by visual angle still can be reduced.
(example 4)
In this example (example 7), for the photoemissive size of each pixel adjustment example 6.More specifically, in example 6, the size of the light emitting area of red pixel 2R increases the size minimizing 3% of the light emitting area of 3%, blue pixel 2B.Figure 16 shows the characteristic pattern of relation between the visual angle of example 7 and brightness.
As can be seen from Figure 16, the colour cast caused by each visual angle in pixel 2R, 2G and 2B by not only regulating the reflecting surface angle (θ) of dielectric film 13 but also regulating each light emitting area in pixel 2R, 2G and 2B to reduce, thus obtains optimization.
(4. application example)
The display unit 1A to 1C being included in above-described embodiment and the pixel 2 to 4 described in above-mentioned amendment example 1 to 3 can preferably use for the view finder of camera and head mounted display particularly, and can be installed in the electronic equipment in any field of display image (or picture), such as following electronic equipment.
Figure 17 A and 17B shows the outward appearance of a smart mobile phone.This smart mobile phone such as can comprise display section 110 (display unit 1A), non-displaypart (shell) 120 and operation part 130.On the front surface that operation part 130 can be arranged on non-displaypart 120 or top surface.
Figure 18 shows the outward appearance configuration of a television set.Television set such as can comprise the image display screen part 200 (display unit 1A) with front panel 210 and filter glass 220.
Figure 19 A and 19B respectively illustrates the front surface of a digital camera and the outward appearance configuration of rear surface.This digital camera such as can comprise the light radiating portion 310 of photoflash lamp, display section 320 (display unit 1A), menu switch 330 and and shutter release button 340.
Figure 20 shows the outward appearance configuration of a notebook-PC.The keyboard 420 that this personal computer such as can comprise main body 410, operate for input characters etc. and the display section 430 (display unit 1A) of display image.
Figure 21 shows the outward appearance configuration of a video camera.This video camera such as can comprise main part 510, be arranged on the front side surface of main part 510 and for the lens 520 of the image of reference object, the switch 530 of shooting start and stop and display section 540 (display unit 1A).
Figure 22 A and 22B shows the outward appearance configuration of a mobile phone.Figure 19 A shows front surface, left-hand face, right lateral surface, top surface and basal surface under wherein mobile phone closed condition.Figure 19 B shows front surface under mobile phone open mode and side surface.This mobile phone can have a configuration, wherein, such as, top side face shell 610 and bottom side shell 620 are linked together by coupling part (hinge portion) 620, and this cell phone can comprise display 640 (display unit 1A to 1C), sub-display 650, photo light 660 and camera 670.
Although disclosure reference example and amendment example 1-3 describe, the disclosure is not limited thereto, and can carry out different amendments.Such as, the material of every layer and thickness and form that the method for every layer and condition be not limited to described in above-described embodiment etc. those, every layer can by being made up of other material any with other thickness any under any other method what its condition in office.
In addition, all each layers described are in the above embodiments and the like non-essential to be included, and one or more in them can be omitted as required.And, the layer except layer described in the above-described embodiments can be added.Such as, the use such as described in Japanese Unexamined Patent Application Publication No.2011-233855 has one or more layers of the material of cavity transmission ability, such as public hole transmission layer, between the blue-light emitting layer 14CB that can be added on charge transport layer 17 and blue light emitting device 10B.When adding this layer, the light emission effciency of light emitting devices 10B and life characteristic are enhanced.
And in the above embodiments and the like, the situation that the sub-pixel of a configuration pixel comprises three pixels (i.e. red pixel, green pixel and blue pixel) is described as an example; But, white pixel or yellow pixel can also be added except three sub-pixels.
It should be noted, this technology can have following configuration.
(1) display unit, it comprises:
Multiple pixel, is configured to launch mutually different utilizing emitted lights; And
Dielectric film, to be arranged between described multiple pixel and to have relative to described radiative reflecting surface,
The angle pin of the described reflecting surface of wherein said dielectric film is arranged each in described pixel.
(2) display unit Gen Ju (1), comprising red pixel, green pixel and blue pixel, and the described reflecting surface angle (θ) of described red pixel, described green pixel and described blue pixel is mutually different.
(3) according to (1) or the display unit described in (2), wherein have the first pixel and second pixel different from the color of the first pixel that are made up of red pixel, green pixel or blue pixel, the described reflecting surface angle (θ) of described first pixel is different from the described reflecting surface angle of described second pixel.
(4) according to the display unit in (1) to (3) described in any one, when wherein said reflecting surface angle (θ) uses described radiative smooth emissive porwer strong, the angle (φ) at place is determined.
(5) according to the display unit in (1) to (4) described in any one, wherein said multiple pixel has mutually different aperture opening ratios.
(6) according to the display unit in (1) to (5) described in any one, a reflecting surface of wherein said dielectric film has different refractive indexes for each in described multiple pixel.
(7) manufacture a method for display unit, it comprises:
Arrange and be multiplely configured to launch mutually different radiative pixels; And
Formed between described multiple pixel and have relative to the described radiative plane of reflection and the angle pin of wherein said reflecting surface dielectric film that each in described pixel is arranged.
(8) method of the manufacture display unit Gen Ju (7), the described angle of the described reflecting surface of wherein said dielectric film regulates by using the photoetching with the photomask changing light transmittance in a stepwise manner.
(9) electronic equipment, is provided with display unit, and described display unit comprises:
Multiple pixel, is configured to launch mutually different utilizing emitted lights; And
Dielectric film, to be arranged between described multiple pixel and to have relative to described radiative reflecting surface,
The angle pin of the described reflecting surface of wherein said dielectric film is arranged each in described pixel.
The application comprises and disclosed related topics in the Japanese Priority Patent Application JP2013-58492 submitted in Japan Office on March 21st, 2013, and its whole content is incorporated in herein by reference.
It should be appreciated by those skilled in the art, as long as be positioned at the scope of claims or its equivalent, just can carry out various amendment, combination, sub-portfolio and change according to design needs and other factors.

Claims (9)

1. a display unit, it comprises:
Multiple pixel, is configured to launch mutually different utilizing emitted lights; And
Dielectric film, to be arranged between described multiple pixel and to have relative to described radiative reflecting surface,
The angle pin of the described reflecting surface of wherein said dielectric film is arranged each in described pixel.
2. display unit according to claim 1, comprising red pixel, green pixel and blue pixel, and the described reflecting surface angle (θ) of described red pixel, described green pixel and described blue pixel is mutually different.
3. display unit according to claim 1, wherein have the first pixel and second pixel different from the color of the first pixel that are made up of red pixel, green pixel or blue pixel, the described reflecting surface angle (θ) of described first pixel is different from the described reflecting surface angle of described second pixel.
4. display unit according to claim 1, when wherein said reflecting surface angle (θ) uses described radiative smooth emissive porwer strong, the angle (φ) at place is determined.
5. display unit according to claim 1, wherein said multiple pixel has mutually different aperture opening ratios.
6. display unit according to claim 1, a reflecting surface of wherein said dielectric film has different refractive indexes for each in described multiple pixel.
7. manufacture a method for display unit, it comprises:
Arrange and be multiplely configured to launch mutually different radiative pixels; And
Formed between described multiple pixel and have relative to the described radiative plane of reflection and the angle pin of wherein said reflecting surface dielectric film that each in described pixel is arranged.
8. the method for manufacture display unit according to claim 7, the described angle of the described reflecting surface of wherein said dielectric film regulates by using the photoetching with the photomask changing light transmittance in a stepwise manner.
9. an electronic equipment, is provided with display unit, and described display unit comprises:
Multiple pixel, is configured to launch mutually different utilizing emitted lights; And
Dielectric film, to be arranged between described multiple pixel and to have relative to described radiative reflecting surface,
The angle pin of the described reflecting surface of wherein said dielectric film is arranged each in described pixel.
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US20190327815A1 (en) 2019-10-24
WO2014148263A1 (en) 2014-09-25
US10334692B2 (en) 2019-06-25
US20180263092A1 (en) 2018-09-13
US20220167474A1 (en) 2022-05-26
KR20190143465A (en) 2019-12-30

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