CN114335062A - Display substrate and display device - Google Patents

Abstract

A display substrate and a display device are provided, wherein the display substrate comprises a base, a light-emitting device, a photosensitive device and a shading structure, the light-shading structure is arranged on the base, the shading structure is located on the periphery of the photosensitive device, and the shading structure is at least configured to shade light rays emitted by the light-emitting device towards the photosensitive device.

Description

Display substrate and display device

Technical Field

The embodiment of the disclosure relates to but is not limited to the technical field of display, in particular to a display substrate and a display device.

Background

An LED (Light Emitting Diode) is a semiconductor device capable of Emitting Light. By adopting different semiconductor materials and structures, the LED chip has the advantages of simple structure, small volume, energy conservation, high efficiency, long service life, clear light and the like, so that the LED chip has gradually replaced the traditional illuminating lamps such as incandescent lamps, fluorescent lamps and the like in recent years, is becoming the mainstream product of a new generation illuminating market, and is also very popular in photoelectric systems.

Not only application fields of the organic light emitting display device are diversified, but also some products are gradually developed to be multifunctional, such as optical in-screen fingerprints. At present, the fingerprint identification technology mainly comprises a capacitance type, an optical type and an ultrasonic type. The capacitance can only be integrated on a Cover plate (Cover) due to the limitation of the penetration distance and cannot be used under a screen; ultrasonic type is not easy to integrate into the screen due to material limitation. The screen only conforms to the optical type and the ultrasonic type of the full screen, and not only conforms to the full screen and the large screen, but also can be integrated, and the optical type is preferred.

In the optical fingerprint identification method, a photosensitive device receives signal light to realize photoelectric conversion, so that the function of optical fingerprints is realized. However, the photosensor receives other noise light in addition to the signal light.

Disclosure of Invention

The following is a summary of the subject matter described in detail in this disclosure. This summary is not intended to limit the scope of the claims.

In a first aspect, an embodiment of the present disclosure provides a display substrate, which includes a substrate, a light emitting device disposed on the substrate, a photosensitive device, and a light shielding structure, where the light shielding structure is located on a peripheral side of the photosensitive device, and the light shielding structure is at least configured to shield light emitted by the light emitting device toward the photosensitive device.

In an exemplary embodiment, an orthographic projection of the light shielding structure on the substrate does not overlap with an orthographic projection of the photosensitive device on the substrate.

In an exemplary embodiment, the light shielding structure is disposed around the periphery of the photosensitive device.

In an exemplary embodiment, in a direction perpendicular to the substrate, a cross section of a surface of the light shielding structure on a side away from the photosensitive device is in a converging shape along the direction away from the substrate.

In an exemplary embodiment, the semiconductor device further includes an active layer disposed on the substrate, a first gate insulating layer disposed on a side of the active layer away from the substrate, and a first gate metal layer disposed on a side of the first gate insulating layer away from the substrate, where the first gate metal layer includes the photosensitive device.

In an exemplary embodiment, the semiconductor device further includes a second gate insulating layer disposed on a side of the first gate metal layer away from the substrate, the second gate insulating layer has a first trench disposed therein, the first trench is located on a peripheral side of the photosensitive device, the first trench includes a first sidewall and a second sidewall, the first sidewall is located on a side of the second sidewall close to the photosensitive device, and the light shielding structure is disposed on a surface of the first sidewall away from the photosensitive device.

In an exemplary embodiment, a bottom of the first trench extends to a surface of the first gate insulating layer on a side away from the substrate.

In an exemplary embodiment, the semiconductor device further includes an interlayer dielectric layer disposed on a side of the second gate insulating layer away from the substrate, a second trench is disposed in the interlayer dielectric layer, the second trench is communicated with the first trench, the second trench includes a third sidewall and a fourth sidewall, the third sidewall is disposed on a side of the fourth sidewall close to the photosensitive device, and the light shielding structure is disposed on a surface of a side of the third sidewall away from the photosensitive device.

In an exemplary embodiment, the third sidewall is connected to the first sidewall, and the light shielding structure on the third sidewall and the light shielding structure on the first sidewall may be integrally formed by using the same material.

In an exemplary embodiment, the light-shielding structure further includes an interlayer dielectric layer disposed on a side of the second gate insulating layer away from the substrate, and a source drain electrode layer disposed on a side of the interlayer dielectric layer away from the substrate, and the light-shielding structure and the source drain electrode layer are made of the same material.

In an exemplary embodiment, the liquid crystal display further comprises a light shielding layer arranged on the substrate, the light shielding layer is located on one side of the active layer close to the substrate, and an orthographic projection of at least part of the light shielding layer on the substrate is overlapped with an orthographic projection of the active layer on the substrate.

In an exemplary embodiment, the light source further comprises a light gathering structure, the light gathering structure is located on the side of the photosensitive device far away from the substrate, an orthographic projection of at least part of the light gathering structure on the substrate overlaps with an orthographic projection of the photosensitive device on the substrate, the light gathering structure is configured to gather light rays incident from the side of the light gathering structure far away from the substrate, and the gathered light rays at least partially face the photosensitive device.

In an exemplary embodiment, the light-gathering structure includes a first material layer and a second material layer, the first material layer is located on one side, close to the substrate, of the second material layer, a refractive index of the first material layer is greater than a refractive index of the second material layer, a concave-convex structure is arranged on a surface of one side, away from the substrate, of the first material layer, an interface between the concave-convex structure and the second material layer is configured to gather light rays incident from one side, away from the substrate, of the concave-convex structure, and at least part of the gathered light rays face the photosensitive device.

In an exemplary embodiment, the photosensitive device further comprises a first flat layer and a second flat layer which are located on the side of the photosensitive device far away from the substrate, the first flat layer is located on the side of the second flat layer close to the substrate, the first flat layer and the first material layer are integrally formed by using the same material, and the second flat layer and the second material layer are integrally formed by using the same material.

A display device is characterized by comprising the display substrate.

Other aspects will be apparent upon reading and understanding the attached drawings and detailed description.

Drawings

The accompanying drawings are included to provide an understanding of the present disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the examples serve to explain the principles of the disclosure and not to limit the disclosure.

Fig. 1 is a schematic view of a display substrate provided in an exemplary embodiment of the present disclosure;

FIG. 2 is a schematic diagram showing a substrate after forming a first slot and a second slot pattern according to an exemplary embodiment of the disclosure;

FIG. 3 is a top view of FIG. 2 at a;

fig. 4 is a schematic view illustrating a substrate after a light blocking structure pattern is formed thereon according to an exemplary embodiment of the present disclosure;

FIG. 5 is a top view of FIG. 4 at a;

FIG. 6 is a schematic view showing a substrate after a first planarization layer pattern is formed according to an exemplary embodiment of the present disclosure;

FIG. 7 is a top view taken at a in FIG. 6;

FIG. 8 is a schematic diagram illustrating a substrate after forming a pattern of light concentrating structures according to an exemplary embodiment of the disclosure;

fig. 9 is a top view of fig. 8 at a.

Detailed Description

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that the embodiments may be implemented in a plurality of different forms. Those skilled in the art can readily appreciate the fact that the forms and details may be varied into a variety of forms without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure should not be construed as being limited to the contents described in the following embodiments. The embodiments and features of the embodiments in the present disclosure may be arbitrarily combined with each other without conflict.

In this specification, for convenience, words such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicating orientations or positional relationships are used to explain positional relationships of constituent elements with reference to the drawings, only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present disclosure. The positional relationship of the components is changed as appropriate in accordance with the direction in which each component is described. Therefore, the words described in the specification are not limited to the words described in the specification, and may be replaced as appropriate.

In this specification, the terms "mounted," "connected," and "connected" are to be construed broadly unless otherwise specifically indicated and limited. For example, it may be a fixed connection, or a removable connection, or an integral connection; can be a mechanical connection, or an electrical connection; either directly or indirectly through intervening components, or both may be interconnected. The meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.

"about" in this disclosure means that the limits are not strictly defined, and that the numerical values are within the tolerances allowed for the process and measurement.

In the optical method, the photosensitive device receives signal light to realize photoelectric conversion, so that the function of optical fingerprint identification is realized. However, the photosensor receives noise light (i.e., light other than the signal light) other than the signal light, for example, noise light outside the display substrate, or lateral light rays of the display area and reflected light rays of the display area. It is therefore necessary to increase the ratio of signal light to noise light to improve the signal-to-noise ratio. In the embodiment of the disclosure, the light shielding structure pattern is prepared by using the metal film layer of the Back Plate (BP) process segment, so as to enhance the signal-to-noise ratio.

The embodiment of the disclosure provides a display substrate, which comprises a substrate, a light-emitting device, a photosensitive device and a shading structure, wherein the light-emitting device, the photosensitive device and the shading structure are arranged on the substrate, the shading structure is arranged on the periphery of the photosensitive device, and the shading structure is configured to shade light rays emitted by the light-emitting device towards the photosensitive device. The light shielding structure may use an existing film layer of the display substrate, or a newly added film layer.

In an exemplary embodiment, the metal film layer of the BP process may be utilized. For example, the source/drain layer SD is formed with a light-shielding structure pattern. Light emitted by the light emitting device is reflected to the photosensitive device (i.e. signal light) through a finger, so that fingerprint identification is performed; the display substrate disclosed by the embodiment of the disclosure prevents the photosensitive device from receiving light directly emitted by the light-emitting device and external ambient light by using the light blocking effect of the light-shielding structure, thereby reducing noise light and enhancing the signal-to-noise ratio.

Fig. 1 is a schematic view of a display substrate according to an embodiment of the disclosure. The display substrate may include a plurality of photo-sensors and a plurality of light-shielding structures, only one photo-sensor and one light-shielding structure being illustrated in fig. 1. As shown in fig. 1, the display substrate may include: the light-emitting diode comprises a substrate 10, a first buffer layer 11 arranged on the substrate 10, a light-shielding layer 12 arranged on one side of the first buffer layer 11, which is far away from the substrate 10, a second buffer layer 13 arranged on one side of the light-shielding layer 12, which is far away from the substrate 10 and covers the light-shielding layer 12, an active layer 14 arranged on one side of the second buffer layer 13, which is far away from the substrate 10, a first gate insulating layer 15 arranged on one side of the active layer 14, which is far away from the substrate 10, and a first gate metal layer arranged on one side of the first gate insulating layer 15, which is far away from the substrate 10; the first gate metal layer may include a first gate electrode 16, a second gate electrode 17, and a photosensitive device 18; a second gate insulating layer 19 disposed on a side of the first gate metal layer remote from the substrate 10 and covering the first gate electrode 16, the second gate electrode 17 and the photosensitive device 18, a second gate metal layer disposed on a side of the second gate insulating layer 19 remote from the substrate 10; the second gate metal layer may include a third gate electrode 20, and an orthographic projection of the third gate electrode 20 on the substrate 10 overlaps with an orthographic projection of the second gate electrode 17 on the substrate 10 to form a capacitor; the interlayer dielectric layer 21 is arranged on one side, far away from the substrate 10, of the third gate electrode 20 and covers the third gate electrode 20, and the first source-drain electrode layer is arranged on one side, far away from the substrate 10, of the interlayer dielectric layer 21; the first source-drain electrode layer may include a source electrode 22 and a drain electrode 23, a first flat layer 24 disposed on a side of the first source-drain electrode layer away from the substrate 10 and covering the source electrode 22 and the drain electrode 23, and a second source-drain electrode layer disposed on a side of the first flat layer 24 away from the substrate 10; the second source-drain electrode layer may include a connection electrode 25, a second planarization layer 26 disposed on a side of the second source-drain electrode layer away from the substrate 10 and covering the connection electrode 25, an anode 27 disposed on a side of the second planarization layer 26 away from the substrate 10, a pixel defining layer 28 disposed on a side of the anode 27 away from the substrate 10, a pixel opening in the pixel defining layer 28 exposing the anode 27, a light emitting layer (not shown in fig. 1) disposed on a side of the anode 27 away from the substrate 10, a cathode (not shown in fig. 1) disposed on a side of the light emitting layer away from the substrate 10, an encapsulation layer (not shown in fig. 1) disposed on a side of the cathode away from the substrate 10, a support layer 29 disposed on a side of the pixel defining layer 28 away from the substrate 10, and a cover plate disposed on a side of the support layer 29 away from the substrate 10. A first through hole is formed in the interlayer dielectric layer 21 and extends to the active layer 14, and the drain electrode 23 is connected with the active layer 14 through the first through hole; a second through hole is formed in the first flat layer 24, the second through hole extends to the drain electrode 23, and the connection electrode 25 is connected with the drain electrode 23 through the second through hole; a third via hole is opened in the second planarization layer 26, the third via hole extends to the connection electrode 25, and the anode 27 is connected to the connection electrode 25 through the third via hole.

The principle of fingerprint identification of the display substrate of the embodiment is as follows: when fingerprint identification is carried out, the finger of a user can press the cover plate, and light emitted by the light emitting layer irradiates the cover plate. Because the valleys of the finger are not actually contacted with the cover plate, the critical angles of total reflection of the light at the valleys and the ridges of the fingerprint are different, and the light intensity of the light received by the photosensitive device 18 is different, so that electric signals with different intensities are generated, the valleys and the ridges of the fingerprint can be judged, and the fingerprint pattern is generated.

In the present embodiment display substrate, the active layer 14, the first gate electrode 16, the second gate electrode 17, the source electrode 22, and the drain electrode 23 constitute a thin film transistor, which is electrically connected to the anode 27. The thin film transistor may form a driving circuit of the display substrate of this embodiment.

In an exemplary embodiment, the thin film transistor may be a top gate structure, but is not limited thereto. In some embodiments, the thin film transistor may be a bottom gate structure.

In the display substrate of the present embodiment, the anode 27, the light-emitting layer, the cathode, and the encapsulation layer form a light-emitting device of the display substrate.

In an exemplary embodiment, the substrate 10 may be a flexible substrate. The flexible substrate may be made of Polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer film.

In an exemplary embodiment, each of the first and second buffer layers 11 and 13 may employ silicon nitride SiNx, silicon oxide SiOx, or the like, may be a single layer, or may be a multi-layer structure of silicon nitride/silicon oxide.

In an exemplary embodiment, the light shielding layer 12 is located on a side of the active layer 14 close to the substrate 10, an orthographic projection of at least a portion of the light shielding layer 12 on the substrate 10 overlaps with an orthographic projection of the active layer 14 on the substrate 10, and the light shielding layer 12 shields the active layer 14 from external light or internal light.

In an exemplary embodiment, the active layer 14 includes a semiconductor. For example, the semiconductor may include polycrystalline silicon, single crystal silicon, amorphous silicon, or a non-silicon based material such as an oxide semiconductor.

In an exemplary embodiment, the first gate insulating layer 15, the second gate insulating layer 19, and the interlayer dielectric layer 21 may each employ an inorganic insulating material. For example, any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON) may be a single layer, a multilayer, or a composite layer.

In an exemplary embodiment, the first gate metal layer, the second gate metal layer, the first source drain electrode layer, and the second source drain electrode layer may be made of a metal material, such as any one or more of copper (Cu), aluminum (Al), titanium (Ti), molybdenum (Mo), chromium (Cr), and tungsten (W), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and may be a single-layer structure or a multi-layer composite structure, such as MoNb/Cu/MoNb.

In an exemplary embodiment, the first and second planarization layers 24 and 26 may each employ an organic insulating material, for example, resin.

The display substrate of the embodiment further includes a light shielding structure 30, the light shielding structure 30 is located on the periphery of the light sensing device 18, the light shielding structure 30 is at least configured to shield the light emitted by the light emitting device towards the light sensing device 18, and the light emitted by the light emitting device and the external ambient light directly emitted by the light emitting device are prevented from being received by the light sensing device 18, especially the transverse light of the light emitting device and the reflected light of the light emitting device, so that noise light is reduced, the signal-to-noise ratio of the light sensing device 18 is improved, the intensity of finger reflected light is further improved, and fingerprint identification is facilitated.

In an exemplary embodiment, the orthographic projection of the light shielding structure 30 on the substrate 10 does not overlap the orthographic projection of the light-sensitive device 18 on the substrate 10, so that the reflected light of the finger is prevented from being shielded by the light shielding structure 30 and the reflected light of the finger is prevented from being received by the light-sensitive device 18.

In an exemplary embodiment, the light shielding structure 30 is annular in cross section in a direction parallel to the substrate 10, and the light shielding structure 30 is disposed around the periphery of the light-sensing device 18 to ensure that the light shielding structure 30 can completely shield light emitted from the light-emitting devices around the light-sensing device 18.

In an exemplary embodiment, in a direction perpendicular to the substrate 10, a cross section of the surface of the light shielding structure 30 on a side away from the photosensitive device 18 is in a gathering shape along a direction away from the substrate 10, so that a certain inclination angle is formed between the surface of the light shielding structure 30 on the side away from the photosensitive device 18 and the surface of the substrate 10, and the light shielding effect of the light shielding structure 30 is improved.

In an exemplary embodiment, a first trench is provided in the second gate insulating layer 19, the first trench being located on the peripheral side of the photosensitive device 18. Illustratively, the first slot is disposed around the circumference of the photosensitive device 18. The first slot includes a first side wall 31a and a second side wall 31b opposite to each other, the first side wall 31a is located on a side of the second side wall 31b close to the photosensitive device 18, and the light shielding structure 30 is disposed on a surface of the first side wall 31a far from the photosensitive device 18.

In an exemplary embodiment, the light shielding structure 30 may employ a metal material, such as any one or more of copper (Cu), aluminum (Al), titanium (Ti), molybdenum (Mo), chromium (Cr), and tungsten (W), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and may be a single layer structure, or a multi-layer composite structure, such as MoNb/Cu/MoNb, and the like.

In an exemplary embodiment, the bottom of the first trench may extend to a surface of the first gate insulating layer 15 on a side away from the substrate 10, exposing the first gate insulating layer 15. The bottom of the light shielding structure 30 on the first sidewall 31a extends to the surface of the first gate insulating layer 15 away from the substrate 10, so that the side of the photosensitive device 18 can be completely wrapped, and the light shielding effect of the light shielding structure 30 is improved.

In some embodiments, the bottom of the first trench may be located in the second gate insulating layer, and the bottom of the light shielding structure 30 on the first sidewall 31a extends into the second gate insulating layer; alternatively, the bottom of the first trench may extend into the first gate insulating layer, and the bottom of the light shielding structure 30 on the first sidewall 31a extends into the first gate insulating layer; alternatively, the bottom of the first trench may extend to the second buffer layer 13, and the bottom of the light shielding structure 30 on the first sidewall 31a extends to the second buffer layer 13. The present disclosure is not described in detail herein.

The display substrate of the embodiment of the present disclosure may prepare the light blocking structure pattern by using the metal film layer of the Back Plate (BP) process segment. In an exemplary embodiment, the light shielding structure 30 and the first source drain electrode layer in the embodiment of the disclosure are made of the same material by the same preparation process. That is, the light-shielding structure 30 is prepared from the same material as the source electrode 22 and the drain electrode 23 by the same preparation process. The preparation process of the display substrate is simplified, and the production cost is reduced.

In an exemplary embodiment, a second slot is disposed in the interlayer dielectric layer 21, the second slot is communicated with the first slot, and at least a part of the orthographic projection of the second slot on the substrate overlaps with the orthographic projection of the first slot on the substrate. The second trench includes a third sidewall 32a and a fourth sidewall 32b, the third sidewall 32a is located on a side of the fourth sidewall 32b close to the photo-sensor 18, and the light shielding structure 30 is disposed on a surface of the third sidewall 32a far from the photo-sensor 18.

In an exemplary embodiment, the third sidewall 32a is connected to the first sidewall 31a, and the light shielding structure 30 on the third sidewall 32a and the light shielding structure 30 on the first sidewall 31a may be integrally formed using the same material. The first open groove and the second open groove can be prepared by adopting the same etching process.

In an exemplary embodiment, the display substrate of the embodiment of the disclosure further includes a light-gathering structure, the light-gathering structure is located on a side of the photosensitive device 18 away from the base 10, an orthographic projection of at least a part of the light-gathering structure on the base 10 overlaps with an orthographic projection of the photosensitive device 18 on the base 10, the light-gathering structure is configured to gather light rays incident from the side of the light-gathering structure away from the base 10, and the gathered light rays at least partially face the photosensitive device 18. Light emitted by the light-emitting device is reflected by fingers and enters the light-gathering structure, and the light is gathered by the light-gathering structure and then enters the photosensitive device 19. The display substrate of the embodiment of the disclosure collects light by using the light-gathering structure, so that the intensity of light entering the photosensitive device 19 can be enhanced, the sensitivity of fingerprint detection is improved, and the contrast of a fingerprint image is improved.

In an exemplary embodiment, the light-focusing structure includes a first material layer 33a and a second material layer 33b, the first material layer 33a is located on a side of the second material layer 33b close to the substrate 10, a refractive index of the first material layer 33a is greater than a refractive index of the second material layer 33b, and a surface of the first material layer 33a away from the substrate 10 is provided with a concave-convex structure 34, and an orthographic projection of at least a portion of the concave-convex structure 34 on the substrate 10 overlaps an orthographic projection of the light-sensing device 18 on the substrate 10. The concave-convex structure 34 has a convex lens function to realize that the light-gathering structure gathers the large-angle light reflected by the finger. The interface of the relief structure 34 and the second material layer 33b is configured to concentrate light incident from the side of the relief structure 34 remote from the substrate 10, and the concentrated light is at least partially directed towards the light-sensitive device 18.

In an exemplary embodiment, the first material layer 33a and the first flat layer 24 may be integrally formed by using the same material, that is, the first material layer 33a and the first flat layer 24 may be prepared by using the same material through the same preparation process, so that the preparation process is simplified, and the production cost is reduced.

In an exemplary embodiment, the second material layer 33b and the second flat layer 26 may be integrally formed by using the same material, that is, the second material layer 33b and the second flat layer 26 may be prepared by using the same material through the same preparation process, so that the preparation process is simplified, and the production cost is reduced.

The embodiment of the invention also provides a display device which comprises the display substrate. The display device includes a mobile phone, a tablet computer, an intelligent wearable product (such as a smart watch, a bracelet, etc.), a Personal Digital Assistant (PDA), an in-vehicle computer, etc. The embodiment of the present application does not particularly limit the specific form of the foldable display device.

The following is an exemplary explanation through the manufacturing process of the light shielding structure. The "patterning process" referred to in the present disclosure includes processes of coating a photoresist, mask exposure, development, etching, stripping a photoresist, and the like, for a metal material, an inorganic material, or a transparent conductive material, and processes of coating an organic material, mask exposure, development, and the like, for an organic material. The deposition can be any one or more of sputtering, evaporation and chemical vapor deposition, the coating can be any one or more of spraying, spin coating and ink-jet printing, and the etching can be any one or more of dry etching and wet etching, and the disclosure is not limited. "thin film" refers to a layer of a material deposited, coated, or otherwise formed on a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. If the "thin film" requires a patterning process during the entire fabrication process, it is referred to as "thin film" before the patterning process and "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern". The term "a and B are disposed in the same layer" in the present disclosure means that a and B are formed simultaneously by the same patterning process, and the "thickness" of the film layer is the dimension of the film layer in the direction perpendicular to the driving backplane. In the exemplary embodiments of the present disclosure, the phrase "the orthographic projection of a includes the orthographic projection of B" means that the boundary of the orthographic projection of B falls within the boundary range of the orthographic projection of a, or the boundary of the orthographic projection of a overlaps with the boundary of the orthographic projection of B.

Fig. 2 to 9 are schematic views showing a process of manufacturing a light shielding structure in a substrate. In an exemplary embodiment, the process of preparing the light blocking structure in the display substrate may include the following operations.

(1) A first slot and a second slot pattern are formed. In an exemplary embodiment, forming the first and second slotting patterns comprises: sequentially forming a first buffer layer 11 on a substrate 10, forming a light shielding layer 12 on the side of the first buffer layer 11 far away from the substrate 10, forming a second buffer layer 13 on the side of the light shielding layer 12 far away from the substrate 10, forming an active layer 14 on the side of the second buffer layer 13 far away from the substrate 10, forming a first gate insulating layer 15 on the side of the active layer 14 far away from the substrate 10, and forming a first gate metal layer on the side of the first gate insulating layer 15 far away from the substrate 10; the first gate metal layer may include a first gate electrode 16, a second gate electrode 17, and a photosensitive device 18; forming a second gate insulating layer 19 on the side of the first gate metal layer far away from the substrate 10, and forming a second gate metal layer on the side of the second gate insulating layer 19 far away from the substrate 10; the second gate metal layer may include a third gate electrode 20, and an orthographic projection of the third gate electrode 20 on the substrate 10 overlaps with an orthographic projection of the second gate electrode 17 on the substrate 10 to form a capacitor; forming an interlayer dielectric layer 21 on one side of the third gate electrode 20 far away from the substrate 10; through the same etching process, a second groove is formed in the interlayer dielectric layer 21, a first groove is formed in the second gate insulating layer 19, the second groove is communicated with the first groove, and the bottom of the first groove can extend to the surface of one side, away from the substrate 10, of the first gate insulating layer 15 to expose the first gate insulating layer 15. Wherein the first trench and the second trench are both disposed around the periphery of the photosensor 18. The first slot includes a first sidewall 31a and a second sidewall 31b, and the first sidewall 31a is located on a side of the second sidewall 31b adjacent to the photo-sensor 18. The second slot comprises a third sidewall 32a and a fourth sidewall 32b, the third sidewall 32a being located on the fourth sidewall 32b on the side close to the photo-sensor 18, and the first sidewall 31a being connected to the third sidewall 32a, as shown in fig. 2 and 3. Fig. 3 is a top view of a portion a in fig. 2.

(2) And forming a light shielding structure pattern. In an exemplary embodiment, forming the light blocking structure pattern includes: depositing a metal film on the substrate 10 with the pattern, wherein the side, far away from the substrate 10, of the interlayer dielectric layer 21, patterning the metal film through a patterning process, and forming a first source drain electrode layer on the interlayer dielectric layer 21; the first source-drain electrode layer may include a source electrode 22, a drain electrode 23, and a light shielding structure 30, the light shielding structure 30 is disposed on a side surface of the first sidewall 31a of the first trench away from the photosensitive device 18, and the light shielding structure 30 is disposed on a side surface of the third sidewall 32a of the second trench away from the photosensitive device 18, and the light shielding structure 30 on the third sidewall 32a and the light shielding structure 30 on the first sidewall 31a may be integrally formed by using the same material, as shown in fig. 4 and 5. Fig. 5 is a top view of a portion a in fig. 4.

(3) A first planarization layer pattern is formed. In an exemplary embodiment, forming the first planarization layer pattern includes: depositing a first material film covering a first source drain electrode layer on the substrate 10 with the pattern formed thereon on the interlayer dielectric layer 21 far away from the substrate 10, patterning the first material film by a patterning process to form a first flat layer 24 and a first material layer 33a, wherein at least part of the first material layer 33a overlaps with the orthographic projection of the photosensitive device 18 on the substrate 10; then, a concave-convex structure 34 is formed on the surface of the first material layer 33a on the side away from the substrate 10, as shown in fig. 6 and 7. Fig. 7 is a top view of a portion a in fig. 6.

(4) And forming a light-gathering structure pattern. In an exemplary embodiment, forming the light concentrating structure pattern includes: depositing a second material film on the first flat layer 24 and the first material layer 33a far away from the substrate 10 on the substrate 10 with the patterns, patterning the second material film through a patterning process to form a second flat layer 26 and a second material layer 33b, wherein at least part of the orthographic projection of the second material layer 33b on the substrate 10 is overlapped with the orthographic projection of the photosensitive device 18 on the substrate 10 and the orthographic projection of the first material layer 33a on the substrate 10; the refractive index of the first material layer 33a is greater than that of the second material layer 33b, as shown in fig. 8 and 9. Fig. 8 is a top view of fig. 9 at a.

In an exemplary embodiment, a light-condensing structure is formed at a portion where an orthogonal projection of the first material layer 33a on the substrate 10 and an orthogonal projection of the second material layer 33b on the substrate 10 overlap. The concave-convex structure 34 of the first material layer 33a has a convex lens function to realize the light gathering structure to gather the large-angle light reflected by the finger. The interface of the relief structure 34 and the second material layer 33b is configured to concentrate light incident from the side of the relief structure 34 remote from the substrate 10, and the concentrated light is at least partially directed towards the light-sensitive device 18.

The drawings in this disclosure relate only to the structures to which this disclosure relates and other structures may be referred to in the general design. Without conflict, features of embodiments of the present disclosure, i.e., embodiments, may be combined with each other to arrive at new embodiments.

It will be understood by those skilled in the art that various modifications and equivalent arrangements may be made in the present disclosure without departing from the spirit and scope of the present disclosure, and the scope of the appended claims should be accorded the full scope of the disclosure.

Claims (15)

1. A display substrate is characterized by comprising a substrate, a light-emitting device, a photosensitive device and a shading structure, wherein the light-emitting device, the photosensitive device and the shading structure are arranged on the substrate, the shading structure is located on the periphery of the photosensitive device, and the shading structure is at least configured to shade light rays emitted by the light-emitting device towards the photosensitive device.

2. The display substrate of claim 1, wherein an orthographic projection of the light shielding structure on the substrate does not overlap with an orthographic projection of the photosensitive device on the substrate.

3. The display substrate of claim 1, wherein the light blocking structure is disposed around the periphery of the photosensitive device.

4. The display substrate according to claim 1, wherein a cross section of a surface of the light shielding structure on a side away from the light-sensitive device in a direction perpendicular to the base is in a converging shape along the direction away from the base.

5. The display substrate of claim 1, further comprising an active layer disposed on the substrate, a first gate insulating layer disposed on a side of the active layer away from the substrate, and a first gate metal layer disposed on a side of the first gate insulating layer away from the substrate, the first gate metal layer comprising the photoactive device.

6. The display substrate according to claim 5, further comprising a second gate insulating layer disposed on a side of the first gate metal layer away from the substrate, wherein a first trench is disposed in the second gate insulating layer, the first trench is located on a peripheral side of the photosensitive device, the first trench includes a first sidewall and a second sidewall, the first sidewall is located on a side of the second sidewall close to the photosensitive device, and the light shielding structure is disposed on a surface of the first sidewall away from the photosensitive device.

7. The display substrate according to claim 6, wherein the bottom of the first trench extends to a surface of the first gate insulating layer on a side away from the base.

8. The display substrate according to claim 6, further comprising an interlayer dielectric layer disposed on a side of the second gate insulating layer away from the substrate, wherein a second trench is disposed in the interlayer dielectric layer, the second trench is communicated with the first trench, the second trench includes a third sidewall and a fourth sidewall, the third sidewall is disposed on a side of the fourth sidewall close to the photosensitive device, and the light shielding structure is disposed on a surface of the third sidewall away from the photosensitive device.

9. The display substrate according to claim 8, wherein the third sidewall is connected to the first sidewall, and the light shielding structure on the third sidewall and the light shielding structure on the first sidewall are integrally formed by using the same material.

10. The display substrate according to claim 6, further comprising an interlayer dielectric layer disposed on a side of the second gate insulating layer away from the substrate, and a source drain electrode layer disposed on a side of the interlayer dielectric layer away from the substrate, wherein the light shielding structure and the source drain electrode layer are made of the same material.

11. The display substrate according to claim 5, further comprising a light shielding layer disposed on the substrate, wherein the light shielding layer is located on a side of the active layer close to the substrate, and an orthographic projection of at least a portion of the light shielding layer on the substrate overlaps with an orthographic projection of the active layer on the substrate.

12. The display substrate according to any one of claims 1 to 11, further comprising a light-gathering structure, wherein the light-gathering structure is located on a side of the photosensitive device away from the substrate, an orthographic projection of at least a part of the light-gathering structure on the substrate overlaps with an orthographic projection of the photosensitive device on the substrate, the light-gathering structure is configured to gather light rays incident from the side of the light-gathering structure away from the substrate, and the gathered light rays at least partially face the photosensitive device.

13. The display substrate according to claim 12, wherein the light converging structure comprises a first material layer and a second material layer, the first material layer is located on one side, close to the substrate, of the second material layer, the refractive index of the first material layer is greater than that of the second material layer, a concave-convex structure is arranged on the surface of one side, away from the substrate, of the first material layer, an interface between the concave-convex structure and the second material layer is configured to converge light incident from one side, away from the substrate, of the concave-convex structure, and at least part of the converged light faces the photosensitive device.

14. The display substrate of claim 13, further comprising a first flat layer and a second flat layer on a side of the photosensitive device away from the substrate, wherein the first flat layer is located on a side of the second flat layer close to the substrate, the first flat layer and the first material layer are integrally formed from the same material, and the second flat layer and the second material layer are integrally formed from the same material.

15. A display device comprising the display substrate according to any one of claims 1 to 14.

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