CN114334729A - Flange device and semiconductor manufacturing system - Google Patents
Flange device and semiconductor manufacturing system Download PDFInfo
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- CN114334729A CN114334729A CN202111617994.8A CN202111617994A CN114334729A CN 114334729 A CN114334729 A CN 114334729A CN 202111617994 A CN202111617994 A CN 202111617994A CN 114334729 A CN114334729 A CN 114334729A
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- wall
- annular
- louver
- diffusion
- diffuser
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 66
- 238000012546 transfer Methods 0.000 claims abstract description 56
- 238000010926 purge Methods 0.000 claims abstract description 26
- 238000012545 processing Methods 0.000 claims abstract description 18
- 235000012431 wafers Nutrition 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 25
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 71
- 230000004888 barrier function Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000005494 condensation Effects 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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Abstract
The invention discloses a flange device which is connected between a processing cavity and a transfer cavity. The apparatus includes a body having a first annular inner wall and a wafer transfer channel defined by the first annular inner wall. The first annular inner wall is defined by a top surface, a pair of side surfaces and a bottom surface, wherein the top surface of the first annular inner wall is provided with a plurality of diffusion holes for supplying purge gas toward the wafer passage. In addition, the invention also discloses a semiconductor manufacturing system.
Description
Technical Field
The present invention relates to semiconductor manufacturing equipment technology, and more particularly, to a flange device (flange device) disposed between a process chamber (PM chamber) and a transfer chamber (TM chamber) and a semiconductor manufacturing system.
Background
Cluster tool (cluster) has been widely used in semiconductor manufacturing, and mainly includes a front-end interface (e.g., a load lock chamber) for performing environment transfer, a transfer chamber (TM chamber) for moving a wafer with a robot finger, and a plurality of process chambers (PM chambers) for performing different processes. Process chambers are known that receive wafers to be processed through a wafer transfer port and eject processed wafers. During the process, although the wafer transfer port is closed by the valve, the space covered by the wafer transfer port is not the reaction region, so the temperature of the space is usually lower than the process temperature of the reaction region.
In order to prevent the process gas from flowing to the low temperature wafer transfer port excessively during the process reaction, it is necessary to develop a special solution to overcome this problem, so as to prevent the process gas from condensing at the relatively low temperature wafer transfer port, thereby forming contaminant particles or causing uneven deposition.
Disclosure of Invention
The invention aims to provide a flange device and a semiconductor manufacturing system, which are used for avoiding the problems of gas condensation and pollution at a wafer transfer port.
The invention provides a flange device, which is used for connecting a processing cavity and a transfer cavity, and comprises: a body having a first annular inner wall and a wafer transfer channel defined by the first annular inner wall, the first annular inner wall having a top surface, a pair of side surfaces and a bottom surface, the top surface of the first annular inner wall being provided with a plurality of diffusion holes for supplying purge gas toward the wafer channel.
The flange device provided by the invention has the beneficial effects that: the top surface of the first annular inner wall is provided with a plurality of diffusion holes for supplying purified gas to the wafer channel, so that condensation of the gas at the wafer transfer port and generation of pollution particles are avoided.
Optionally, the body is provided with a gas inlet for receiving purge gas, an annular diffusion channel is formed in the body and extends between the gas inlet and the plurality of diffusion holes for distributing purge gas from the gas inlet to the plurality of diffusion holes, and the annular diffusion channel surrounds the wafer channel.
Optionally, the body is composed of a louver and an outer frame, the louver has the first annular inner wall and an annular outer wall, an annular groove is formed in the annular outer wall of the louver and extends along the annular outer wall of the louver, the outer frame has a second annular inner wall, and when the annular outer wall of the louver and the second annular inner wall of the outer frame are combined, the groove and the second annular inner wall of the outer frame form the annular diffusion channel.
Optionally, the body comprises a transom and an outer frame, the transom has an annular outer wall, an annular slot and a rectangular slit, the annular slot form in the annular outer wall of transom and along the annular outer wall of transom extends, rectangular slit form in the top surface of first annular inner wall, make rectangular slit with the slot communicates with each other, the outer frame is provided with a diffusion tube, the diffusion tube is formed with a plurality of diffusion holes, when the diffusion tube is located the transom with when the outer frame, a plurality of diffusion holes of diffusion tube via rectangular slit expose in the wafer passageway.
Optionally, the diffusion tube is configured to be detachably inserted into the body, when the diffusion tube is inserted into the body, the plurality of diffusion holes of the diffusion tube correspond to the elongated slits of the air window, the diffusion tube, the outer frame and the air window define the annular diffusion channel, and purge gas can enter the wafer channel through the annular diffusion channel and the plurality of diffusion holes.
Optionally, a gap is formed at each of two ends of the diffuser, and when the diffuser is inserted into the body, the gap is in fluid communication with the groove of the louver, so that the purge gas can enter the diffuser through the gap.
Optionally, one end of the diffuser pipe is connected to a rotating means, so that the diffuser pipe can rotate with its insertion direction as a rotating axis, thereby changing the direction of the plurality of diffusion holes.
In addition, the present invention provides a semiconductor manufacturing system comprising: a processing chamber for performing a fabrication process, the processing chamber having a first wafer transfer port; a transfer chamber for transferring wafers between stations, having a second wafer transfer port; the flange device is connected between the processing cavity and the transfer cavity, and the wafer channel corresponds to the first wafer transfer port and the second wafer transfer port; and a gas source connected to and supplying a purge gas to the flange apparatus.
The semiconductor manufacturing system adopts the flange device, the gas source is connected with and supplies purge gas to the flange device, the top surface of the first annular inner wall of the flange device is provided with a plurality of diffusion holes, the purge gas can enter the wafer channel downwards through the diffusion holes and form the gas barrier at the wafer transfer port of the reaction cavity, and the problems of condensation and pollution of the gas at the transfer port are avoided.
Drawings
FIG. 1 is a plan view showing the flange apparatus of the present invention coupled between a process chamber and a transfer chamber, wherein the flange apparatus and process chamber are shown in cross-section.
FIG. 2 is a perspective view showing the flange apparatus of the present invention coupled between a process chamber and a transfer chamber, wherein the flange apparatus and process chamber are shown in cross-section.
Fig. 3 shows the association of the flange device of the present invention with a gas source.
Fig. 4 shows a first embodiment of the flange device according to the invention.
Fig. 5A to 5C show a second embodiment of the flange device according to the present invention, wherein the cross-sections of fig. 5A and 5B and the cross-section of fig. 5C are orthogonal planes to each other.
Fig. 6A to 6B show front and sectional views of the diffuser tube.
Fig. 7A to 7B show other embodiments of the diffuser tube.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which specific exemplary embodiments are shown by way of illustration. The claimed subject matter may, however, be embodied in many different forms and should not be construed as limited to any example embodiments set forth herein; the exemplary embodiments are merely illustrative. As such, this invention is intended to provide a reasonably broad scope of coverage to the claimed subject matter as claimed or as covered thereby.
The use of the phrase "in one embodiment" in this specification does not necessarily refer to the same embodiment, and the use of "in other embodiment(s)" in this specification does not necessarily refer to different embodiments. It is intended that, for example, claimed subject matter include all or a portion of the exemplary embodiments in combination.
Fig. 1 and 2 show that the flange device 1 of the present invention is connected to a processing chamber 2 and a transfer chamber 3, and particularly, the processing chamber 2 and the transfer chamber 3 are part of a cluster processing apparatus. More specifically, the flange device 1 of the present invention is connected between the wafer transfer port 20 of the process chamber 2 and the wafer transfer port 30 of the transfer chamber 3. Although the processing chamber 2 shown in the drawings has various components omitted and not shown, including a lid and a hotplate, those skilled in the art will appreciate that this is a dual chamber and is typically used to perform the same process, but the invention is not so limited. As is well known to those skilled in the art, the processing region for processing the wafer is generally the region surrounded by the pumping ring 21, and the space below the pumping ring 21 to the wafer transfer port 20 is the non-reactive region, which is also the region where the process gas should be prevented from entering as much as possible to prevent condensation of the process gas. The space below the pumping ring 21 to the wafer transfer port 20 is a flat channel extending laterally from the cylindrical space.
As can be seen, the bottom of the inventive flange device 1 is further connected to a gas supply line 4, which is further connected to a gas source 5, in particular a purge gas source. Thus, the flange device 1 of the present invention can supply purge gas to the wafer transfer port 20 of the processing chamber 2 and control the pressure, flow rate, temperature and flow direction of the gas. Although the gas source 5 is shown as an additional gas box (gas box), it should be understood by those skilled in the art that the gas source 5 can also be a gas source provided in the cluster tool, i.e., a gas source used by original service equipment can further pull the gas supply line 4 to the flange apparatus 1. The purge gas is an inert gas in the working examples of the invention. It is to be understood that the gas source 5 described herein is not limited to a plant-owned gas source or an additional configuration of gas sources. Fig. 1 shows, by means of arrows, purge gas entering the flange device 1 from the gas supply line 4 and being supplied from the flange device 1 toward the wafer transfer opening 20, the purge gas being discharged via the gas ring 21. Thus, the space at the wafer transfer port 20 is filled with purge gas to form a gas barrier (gas barrier), which can effectively prevent the process gas from entering the non-reaction region.
Fig. 3 shows a flange device 1 according to the invention and a gas supply line 4, wherein the gas supply line 4 can be configured to supply purge gas to both flange devices 1 at the same temperature, flow rate and pressure. The gas supply line 4 may include components such as a heating jacket, a filter, a Mass Flow Controller (MFC), a pressure valve, and a manual valve, but the present invention is not limited thereto, and these components may also be implemented by the gas source 5. As before, the gas source 5 may be a gas source that is used by the transfer chamber 3, i.e. the flange device 1 and the transfer chamber 3 may share the same gas source. Furthermore, the flange device 1 according to the invention has two opposite connection interfaces, which can be connected in a suitable manner to the outside of the process chamber 2 and to the outside of the transfer chamber 3, respectively. The connection interface may be any combination of mechanisms for connection of the mechanical interface. In view of the practical design of the processing chamber and the transfer chamber, the connection interface of the flange device of the present invention can be configured by different mechanisms, and is not limited to the appearance disclosed in the figures.
Fig. 4 shows a first embodiment of the flange device of the present invention, which is a main body mainly composed of a louver 10 and an outer frame 15.
The louver 10 is an elongated ring having a first annular inner wall 101 and an opposing annular outer wall 102. The first annular inner wall 101 includes a top surface 101A, a pair of side surfaces 101B and a bottom surface 101C, thereby defining a wafer passage having a width and a height corresponding to the wafer transfer ports 20, 30 shown in FIG. 1. The wafer may be passed from the transfer chamber into the processing chamber or back out of the processing chamber through the passage.
The annular outer wall 102 of the louver 10 is formed with an annular groove 103 that extends along the annular outer wall 102 and around the wafer passage, but does not penetrate the wall. The top surface 101A is formed with a plurality of diffusion holes 104 in regions corresponding to the annular trenches 103, and the diffusion holes 104 are uniformly arranged along the length direction of the louver 10.
The outer frame 15 has a second annular inner wall 151 including a top surface 151A, a pair of side surfaces 151B and a bottom surface 151C, which are substantially flat surfaces to define a receiving space for receiving the louver 10. Specifically, the second annular inner wall 151 is configured to mate with the annular outer wall 102 of the louver 10, meaning that when the louver 10 and the outer frame 15 are assembled together, the annular outer wall 102 and the second annular inner wall 151 almost fit with only a slight gap therebetween, which can be sealed using known means without exposure. The second annular inner wall 151 may be provided with a stop mechanism that cooperates with the annular outer wall 102 to ensure that the louver 10 is in place within the outer frame 15, or to limit the assembly and disassembly of the louver 10 and the outer frame 15 to only a particular orientation.
The second annular inner wall 151 is formed with a gas inlet 152 extending between the bottom surface 151C and the bottom of the outer frame 15 for connecting the gas supply line 4 as shown in FIG. 3. Purge gas enters the flange apparatus via inlet 152. In other embodiments, more air inlets 152 may be formed on the bottom surface 151C of the second annular inner wall 151.
When the louver 10 and the outer frame 15 are assembled, the annular groove 103 of the annular outer wall 102 and the second annular inner wall 151 of the outer frame 15 together define an annular diffuser channel. When assembled, the position of the air inlet 152 of the second annular inner wall 151 corresponds to the position of the annular groove 103, so that the annular diffusion channel formed after assembly is communicated with the air inlet 152. The purge gas enters the annular diffusion channel from the gas inlet 152, diffuses to both sides (width direction of the wafer channel) and flows upward to the top of the annular diffusion channel, i.e., the section where the diffusion holes 104 are distributed. Finally, the purge gas may enter the wafer passage down through the diffusion holes 104 and form the gas barrier at the wafer transfer port of the reaction chamber.
Fig. 5A to 5C are views showing a second embodiment of the flange device of the present invention, wherein fig. 5A and 5B show the internal structure based on the same cross-section, and the cross-section of fig. 5C is orthogonal to the cross-sections of the first two and is located at the center of the flange device. Specifically, the cross-sections of fig. 5A and 5B are parallel to the connection interface of the flange device, and the cross-section of fig. 5C is orthogonal to the connection interface, so that fig. 5A and 5B can see the complete annular diffusion channel path, while fig. 5C can see the cross-sectional detail of the annular diffusion channel, where H is the height of the wafer channel, i.e., the distance between the top surface 101A and the bottom surface 101C.
The main difference between the second embodiment of the flange device according to the invention and the first embodiment is that the diffusion holes provided by the first annular inner wall of the second embodiment are adjustable. More specifically, the diffusion hole provided in the first annular inner wall of the second embodiment is a diffusion hole provided in a movable member, as described in detail below.
Fig. 5A to 5C show the louver 10 assembled to the outer frame 15. Although a separate louver 10 is not shown in fig. 5A-5C, as in the first embodiment shown in fig. 4, the louver 10 of the second embodiment also has the same annular outer wall 102 and annular groove 103 formed therein, so that the louver 10 and the outer frame 15 are combined to form a diffuser channel extending laterally and upwardly from both sides of the air inlet 152.
However, the louver 10 of the second embodiment is formed with an elongated slit 105 in the top surface 101A of its inner wall. Specifically, the louver 10 of the second embodiment does not have the plurality of diffusion holes 104 as shown in fig. 4, but instead has the elongated slits 105, and the annular outer wall and the top surface 101A are penetrated through the annular groove 103 and the elongated slits 105. The cross-section of the fifth C shows that the louver 10 has the annular groove 103 and elongated slits 105 from the outer wall 102 to the top surface 101A of the inner wall, and the elongated slits 105 also form a diffusion funnel structure near the top surface 101A.
The outer frame 15 is formed with an insertion hole, into which a diffusion pipe 6 is inserted, at a position close to the elongated slit 105 of the louver 10. The sixth A shows an embodiment of the diffuser 6, and the sixth B shows a cross-sectional structure according to line AA. The diffuser 6 is basically a tube having an end 61 and a coupling end 62. The end 61 has a configuration matching the end of the receptacle and the coupling end 62 is adapted to be connected to a rotating means, in this embodiment a motor 7. The length of the diffuser pipe 6 is appropriately selected so that the coupling end 62 of the diffuser pipe 6 inserted into the insertion hole can be connected to the motor 7 located outside the outer frame 15. As the rotational operation, the motor 7 can force the diffuser 6 to rotate relative to the outer frame 15 about the insertion direction (shown by a dotted line in fig. 5A). The diameter of the diffuser 6 is suitably selected so that the portion of the diffuser 6 inserted into the insertion hole is received in the annular groove 103, as shown in fig. 5C, and may even slightly enter the elongated slit 105. In addition, both sides of the annular groove 103 may be chamfered for the purpose of smooth rotation to reduce friction when the diffusion hole 6 rotates.
The diffuser 6 is formed with a notch 63 near the distal end 61 and the coupling end 62, respectively, and a plurality of diffuser holes 64 between the two notches 63. The diffusion holes 64 are substantially linearly aligned along the length of the tube, although the invention is not so limited. According to the sixth view B, the passages in the diffuser tube 6 fluidly connect the notches 63 and the diffuser holes 64, allowing gas to enter the tube from the notches 63 and be released out of the tube through the diffuser holes 64.
Fig. 7A and 7B show other embodiments of the diffuser tube, respectively. Unlike the cylindrical holes (or tapered holes) of fig. 6A, the diffusion holes may be replaced with a plurality of slot-shaped diffusion holes 64' or a single slit-shaped diffusion hole 64 ".
Referring back to fig. 5A to 5C, when the diffusion tube 6 is inserted into the insertion hole, the tube wall contacts the outer wall of the louver 10, so that the two upper ends of the diffusion channel are not directly in fluid communication with the space of the wafer channel, and the two notches 63 on the tube body are respectively located above the two upper ends of the diffusion channel, thereby forming an annular diffusion channel between the diffusion channel and the inner channel of the diffusion tube 6. Specifically, the louver 10 has a pair of shoulders 106, the elongated slot 105 is defined between the shoulders 106, and the shoulders 106 contact the surface of the diffuser 6 to form a barrier that prevents gas from flowing directly from the diffuser into the wafer passages, but is forced into the tube from the notch 63.
When the diffusion tube 6 is inserted between the louver 10 and the outer frame 15, the top surface 101A of the first annular inner wall is provided with diffusion holes 64 of the diffusion tube 6, which are exposed to the wafer passage through the annular groove 103 and the elongated slits 105, as shown in fig. 5C. The purge gas diffuses through diffusion holes 64 into the wafer path to form a gas barrier.
The diffuser 6 is rotated about the insertion direction by the rotation means provided by the motor 7, as described above. Thereby, the direction of the diffusion holes 64 is deflected. As shown in fig. 5C, the direction of the diffuser holes 64 may be deflected clockwise or counterclockwise to allow the gas barrier to selectively approach the wafer transfer port of the process chamber or the wafer transfer port of the transfer chamber. In other words, the second embodiment of the flange device according to the present invention has a mechanism for adjusting the direction of the diffusion holes 64 and a control of the displacement of the gas barrier.
In the cluster tool equipped with the flange apparatus according to the first or second embodiment, the gas barrier is formed in the space near the wafer transfer port of the processing chamber, and the gas barrier is maintained at a specific temperature, pressure and flow rate by the heating means and the control means. Therefore, during the process, the temperature of the wafer transfer port can be consistent with that of the reaction area, and the reaction gas is blocked by the gas barrier and is difficult to flow to the wafer transfer port, so that the condensation and the generation of pollution particles of the reaction gas at the wafer transfer port are avoided.
Claims (8)
1. A flange apparatus for coupling between a process chamber and a transfer chamber, the apparatus comprising: a body having a first annular inner wall and a wafer transfer channel defined by said first annular inner wall, said first annular inner wall having a top surface, a pair of side surfaces and a bottom surface, wherein: the top surface of the first annular inner wall is provided with a plurality of diffusion holes for supplying purge gas toward the wafer passage.
2. The flange apparatus of claim 1, wherein the body is provided with a gas inlet for receiving a purge gas, an annular diffusion channel is formed in the body and extends between the gas inlet and the plurality of diffusion holes for distributing the purge gas from the gas inlet to the plurality of diffusion holes, and the annular diffusion channel surrounds the wafer channel.
3. The flange apparatus according to claim 2, wherein the body is composed of a louver and an outer frame, the louver having the first annular inner wall and an annular outer wall, an annular groove being formed in and extending along the annular outer wall of the louver, and the outer frame having a second annular inner wall, the groove and the second annular inner wall of the outer frame forming the annular diffusion channel when the annular outer wall of the louver and the second annular inner wall of the outer frame are combined.
4. The flange apparatus according to claim 2, wherein the body is composed of a louver and an outer frame, the louver has an annular outer wall, an annular groove formed in and extending along the annular outer wall of the louver, and an elongated slit formed in a top surface of the first annular inner wall so that the elongated slit communicates with the groove, the outer frame is provided with a diffuser pipe formed with a plurality of diffusion holes, and the plurality of diffusion holes of the diffuser pipe are exposed to the wafer passage through the elongated slit when the diffuser pipe is positioned between the louver and the outer frame.
5. The flange apparatus of claim 4, wherein the diffuser pipe is configured to be removably inserted into the body, when the diffuser pipe is inserted into the body, the plurality of diffuser holes of the diffuser pipe correspond to the elongated slots of the louvers, the diffuser pipe, the outer frame and the louvers define the annular diffuser channel, and purge gas is allowed to enter the wafer passage through the annular diffuser channel and the plurality of diffuser holes.
6. A flange apparatus according to claim 5, wherein the diffuser pipe is formed with a notch at each end thereof, and the notch is in fluid communication with the groove of the louver when the diffuser pipe is inserted into the body, so that purge gas can enter the diffuser pipe through the notch.
7. The flange apparatus according to claim 5, wherein one end of the diffuser pipe is connected to a rotating means so that the diffuser pipe can be rotated about its insertion direction as a rotation axis to change the direction of the plurality of diffusion holes.
8. A semiconductor manufacturing system, comprising: a processing chamber for performing a fabrication process, the processing chamber having a first wafer transfer port; a transfer chamber for transferring wafers between stations, having a second wafer transfer port; the flange apparatus of any one of claims 1 to 7, coupled between a process chamber and a transfer chamber, and the wafer passage corresponds to the first wafer transfer port and the second wafer transfer port; and a gas source connected to and supplying a purge gas to the flange apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111617994.8A CN114334729A (en) | 2021-12-27 | 2021-12-27 | Flange device and semiconductor manufacturing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111617994.8A CN114334729A (en) | 2021-12-27 | 2021-12-27 | Flange device and semiconductor manufacturing system |
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| Publication Number | Publication Date |
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| CN114334729A true CN114334729A (en) | 2022-04-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111617994.8A Pending CN114334729A (en) | 2021-12-27 | 2021-12-27 | Flange device and semiconductor manufacturing system |
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| CN (1) | CN114334729A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214317A (en) * | 1998-01-27 | 1999-08-06 | Kokusai Electric Co Ltd | Treatment apparatus and method for substrate |
| US20030159780A1 (en) * | 2002-02-22 | 2003-08-28 | Carpenter Craig M. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
| CN105603391A (en) * | 2014-11-13 | 2016-05-25 | 东京毅力科创株式会社 | Film forming apparatus |
| CN107921659A (en) * | 2015-07-23 | 2018-04-17 | 瑞尼斯豪公司 | Increasing material manufacturing equipment and the gas flow means for this kind equipment |
| KR101875305B1 (en) * | 2017-01-09 | 2018-07-05 | 에스케이실트론 주식회사 | Slit Purge Apparatus for Between Chamber and High Temperature Atmospheric Pressure Vapor Growth Device Including the Same |
-
2021
- 2021-12-27 CN CN202111617994.8A patent/CN114334729A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214317A (en) * | 1998-01-27 | 1999-08-06 | Kokusai Electric Co Ltd | Treatment apparatus and method for substrate |
| US20030159780A1 (en) * | 2002-02-22 | 2003-08-28 | Carpenter Craig M. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
| CN105603391A (en) * | 2014-11-13 | 2016-05-25 | 东京毅力科创株式会社 | Film forming apparatus |
| CN107921659A (en) * | 2015-07-23 | 2018-04-17 | 瑞尼斯豪公司 | Increasing material manufacturing equipment and the gas flow means for this kind equipment |
| KR101875305B1 (en) * | 2017-01-09 | 2018-07-05 | 에스케이실트론 주식회사 | Slit Purge Apparatus for Between Chamber and High Temperature Atmospheric Pressure Vapor Growth Device Including the Same |
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