CN114334642A - Film patterning method and preparation method of semiconductor device - Google Patents
Film patterning method and preparation method of semiconductor device Download PDFInfo
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- CN114334642A CN114334642A CN202210229014.5A CN202210229014A CN114334642A CN 114334642 A CN114334642 A CN 114334642A CN 202210229014 A CN202210229014 A CN 202210229014A CN 114334642 A CN114334642 A CN 114334642A
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- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000000059 patterning Methods 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 105
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 70
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 238000004381 surface treatment Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 88
- 239000010408 film Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 37
- 239000007769 metal material Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- -1 nitrogen-containing ions Chemical class 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005457 optimization Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a film layer patterning method and a semiconductor device manufacturing method. In the patterning method of the film layer, plasma surface treatment is carried out on a part needing to be reserved in the film material layer through a mask of the photoresist layer, so that the top surface of the part is passivated to form a passivation layer, the film material below the part can be protected from being removed by the formed passivation layer, and the patterning effect of the film layer is realized. The patterning method provided by the invention can effectively solve the problem of residual photoresist, reduces the defects caused by the patterning process, has a simple process, and realizes further optimization of the patterning process.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a film patterning method and a preparation method of a semiconductor device.
Background
In semiconductor processing, a patterning process is an indispensable and crucial process for achieving the preparation of a specific pattern structure. One conventional patterning method includes: firstly, forming a graphical photoresist layer on a thin film material layer to be patterned so as to cover a part which is not required to be removed by utilizing the photoresist layer; and then, removing the part of the film material layer which is not covered by the photoresist layer, reserving the part of the film material layer which is covered by the photoresist layer to realize the patterning of the film layer, and finally, further removing the photoresist layer. The other patterning method is realized by adopting a stripping process, namely: preferentially forming a patterned photoresist layer on a substrate, wherein the region where a film layer is required to be formed is exposed in the photoresist layer; and then, depositing a film material, and then stripping the photoresist layer to simultaneously remove the film material attached on the photoresist layer, so that the film material in the area where the film layer needs to be formed is reserved, and further the patterned film layer is formed.
However, both of the above-mentioned patterning methods have certain process defects, such as the photoresist is easily remained on the substrate, which results in poor device performance. In addition, for the lift-off process, the process capability is limited by the thickness of the photoresist layer, and thus it is difficult to use the lift-off process for patterning a film layer with a larger thickness.
Disclosure of Invention
The invention aims to provide a film layer patterning method to optimize a patterning effect and reduce defects caused by a patterning process.
In order to solve the above technical problem, the present invention provides a method for patterning a film layer, comprising: forming a film material layer on a substrate; forming a patterned photoresist layer on the thin film material layer, wherein part of the thin film material layer is exposed out of the patterned photoresist layer; performing plasma surface treatment on the exposed part of the thin film material layer to passivate the top of the exposed thin film material layer to form a passivation layer; and removing the photoresist layer and removing the part of the thin film material layer which is not covered with the passivation layer.
Optionally, the plasma surface treatment is performed using oxygen-containing ions to form an oxide layer on top of the thin film material layer.
Optionally, the plasma surface treatment is performed with nitrogen-containing ions to form a nitride layer on top of the thin film material layer.
Optionally, after removing the photoresist layer, etching the thin film material layer by using a wet etching process and/or a dry etching process to remove a portion of the thin film material layer that is not covered by the passivation layer.
Optionally, the material of the thin film material layer includes nickel. After the photoresist layer is removed by using the photoresist stripping liquid, the film material layer can be eroded by using the stripping liquid continuously so as to remove the part, which is not covered by the passivation layer, in the film material layer.
Optionally, the film material layer is a metal material layer. And after removing the part of the thin film material layer which is not covered with the passivation layer, the method further comprises the following steps: and (5) performing a thermal annealing process.
Optionally, the substrate includes a silicon substrate or a silicon carbide substrate.
The invention also provides a preparation method of the semiconductor device, which comprises the patterning method of the film layer.
According to the film layer patterning method provided by the invention, the photoresist layer is formed above the film material layer to be patterned, so that the photoresist layer is prevented from contacting the surface of the substrate, and the risk of photoresist residue on the substrate is reduced. And then, performing plasma surface treatment on the part, which needs to be reserved, of the thin film material layer under the mask of the photoresist layer to passivate the top surface of the part to form a passivation layer, so that the thin film material below the part can be protected from being removed by the formed passivation layer, and only the part, which is not covered by the passivation layer, of the thin film material layer is removed, and the patterning process of the film layer is realized. That is, the patterned photoresist layer covers the portion of the thin film material layer that needs to be removed, so that even if there is photoresist residue when the photoresist layer is stripped, the residual photoresist will be further removed when the thin film material layer is etched, and the photoresist residue is prevented from adhering to the substrate and being difficult to remove. Therefore, the patterning method provided by the invention effectively reduces the defects caused by the patterning process, has a simple process and realizes further optimization of the patterning process.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for patterning a film layer according to an embodiment of the invention.
Fig. 2-5 are schematic structural diagrams of a film layer during a patterning process according to an embodiment of the invention.
Wherein the reference numbers are as follows: 100-a substrate; 200-a layer of thin film material; 210-a passivation layer; 300-photoresist layer.
Detailed Description
The core idea of the present invention is to provide a novel film patterning method, which can be specifically described with reference to fig. 1.
In step S100, a thin film material layer is formed on a substrate.
Step S200, forming a graphical photoresist layer on the film material layer, wherein a part of the film material layer is exposed out of the graphical photoresist layer.
And step S300, carrying out plasma surface treatment on the exposed part of the thin film material layer so as to passivate the top of the exposed thin film material layer to form a passivation layer.
Step S400, removing the photoresist layer and removing the part of the thin film material layer which is not covered with the passivation layer.
That is, in the patterning method provided by the present invention, the plasma surface treatment is performed on the portion of the thin film material layer that needs to be remained under the mask of the photoresist layer, so that the top surface of the portion is passivated to form the passivation layer, and thus the formed passivation layer can protect the thin film material thereunder from being removed, and only the portion of the thin film material layer that is not covered by the passivation layer is removed, thereby implementing the patterning process of the thin film layer.
The following describes the method for patterning a thin film and the method for manufacturing a semiconductor device according to the present invention in further detail with reference to fig. 1 and fig. 2 to fig. 5. Fig. 1 is a schematic flow chart of a method for patterning a film layer according to an embodiment of the present invention, and fig. 2 to 5 are schematic structural diagrams of the film layer during patterning according to an embodiment of the present invention. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. It will be understood that relative terms, such as "above," "below," "top," "bottom," "above," and "below," may be used in relation to various elements shown in the figures. These relative terms are intended to encompass different orientations of the elements in addition to the orientation depicted in the figures. For example, if the device were inverted relative to the view in the drawings, an element described as "above" another element, for example, would now be below that element.
In step S100, and with particular reference to fig. 2, a thin film material layer 200 is formed on a substrate 100.
The substrate 100 may be a silicon substrate, a germanium-silicon substrate, or a silicon carbide substrate; in one example, for example, the substrate 100 is a silicon carbide epitaxial wafer, and the silicon carbide epitaxial wafer has a thickness of, for example, 200um to 500 um.
Further, the material and thickness of the thin-film material layer 200 may be selected based on actual conditions. For example, the thin film material layer 200 may be a conductive material layer, wherein the conductive material includes a metal material. In this embodiment, the thin film material layer 200 is taken as an example of a metal material layer, wherein the metal material may include nickel or titanium, or a combination of the two, and the thickness of the metal material layer is, for example, 50nm to 600 nm.
In step S200, referring specifically to fig. 3, a patterned photoresist layer 300 is formed on the thin film material layer 200. Wherein the photoresist layer 300 covers the portion of the thin film material layer 200 that needs to be removed and exposes the portion of the thin film material layer 200 that needs to be remained.
It should be appreciated that the photoresist layer 300 is formed over the thin film material layer 200 without contacting the surface of the substrate 100, and thus, the photoresist does not remain on the surface of the substrate 100.
In contrast, in the conventional lift-Off process (Liff-Off), a photoresist layer is required to be formed on the surface of the substrate, and the surface of the substrate on which the metal layer is required to be formed is exposed by photolithography and development, and at this time, the photoresist is liable to remain on the exposed surface of the substrate, and when the metal layer is formed subsequently, the problem of poor contact between the metal layer and the substrate is further caused. Moreover, the lift-off process also has certain process limitations, such as the patterning process of the metal layer with a larger thickness is difficult to realize due to the limitation of the thickness of the photoresist layer.
Therefore, compared with the patterning method of the lift-off process, the patterning method provided by the embodiment can effectively avoid the problem that the photoresist is remained on the surface of the substrate, and particularly can correspondingly avoid the problem that the contact performance between the formed metal layer and the substrate is poor due to the residual photoresist when the patterning method faces the metal layer. In addition, the patterning method provided by the implementation is also beneficial to overcoming the process limitation in the stripping process and reducing the difficulty of the patterning process.
In step S300, referring to fig. 4 in particular, the exposed portion of the thin film material layer 200 is subjected to a plasma surface treatment to passivate the top of the exposed thin film material layer 200 to form a passivation layer 210.
Specifically, the film layer property on the top of the thin film material layer 200 is changed by passivating the top of the thin film material layer 200, so that the top passivated portion and the unpassivated portion in the thin film material layer 200 have different etching rates in the subsequent etching process, respectively, for example, the etching selection ratio of the unpassivated portion and the top passivated portion is greater than or equal to 10: 1. That is, the passivation layer 210 in the thin film material layer and the unpassivated portion of the thin film material layer have different etch rates.
It should be noted that, in the present embodiment, the surface treatment is performed on the thin film material layer 200 by using the plasma, so that only the top surface and a small portion near the top surface of the thin film material layer 200 are passivated, and the passivation is not formed on the entire thickness of the thin film material layer 200. That is, the surface-treated thin film material layer 200 still has an unpassivated portion below its top; for example, in the case of a metal material layer, after the metal material layer is subjected to a surface treatment, only the top portion of the metal material layer may be passivated, while the lower portion of the metal material layer is not passivated and still maintains its original performance (e.g., conductivity, etc.).
In an alternative, the plasma surface treatment may be performed using an oxygen-containing plasma, and the exposed top of the thin film material layer 200 may be subjected to an oxygen atmosphere to form an oxide layer, which forms the passivation layer 210. Taking a metal material layer as an example, a metal oxide layer is formed on top of the metal material layer in an oxygen atmosphere, and the metal oxide layer constitutes the passivation layer 210, for example, for a nickel metal layer, the top of the metal oxide layer is passivated to form nickel oxide.
In another alternative, a plasma surface treatment may be performed using a nitrogen-containing plasma, wherein the exposed top portion of the thin film material layer 200 may be subjected to a nitrogen atmosphere to form a nitride layer, and the formed nitride layer constitutes the passivation layer 210. Taking the metal material layer as an example, a metal nitride layer is formed on top of the metal material layer in a nitrogen atmosphere, for example, for a nickel metal layer, the top of the metal material layer is passivated to form nickel nitride.
In step S400, referring to fig. 5 in particular, the photoresist layer is removed, and a portion of the thin film material layer 200 not covered by the passivation layer 210 is removed. That is, the portion of the thin film material layer corresponding to the portion covered by the photoresist layer will continue to be removed.
Wherein the photoresist layer can be removed by using a photoresist stripper. It should be noted that, since the portion of the thin film material layer 200 covered by the photoresist layer corresponds to the portion to be removed subsequently, even if there is photoresist residue after the photoresist layer is stripped, the photoresist residue on the thin film material layer will be removed simultaneously with the further removal of the subsequent thin film material layer, so as to avoid the photoresist residue on the substrate.
In contrast, in the conventional patterning process, a patterned photoresist layer needs to cover a portion of a thin film material layer that needs to be reserved and expose a portion of the thin film material layer that does not need to be reserved, the thin film material layer is etched under a mask based on the photoresist layer so that the portion of the thin film material layer that is covered by the photoresist layer is reserved, and then the photoresist layer is removed.
Compared with the conventional patterning process, in the patterning method provided by the embodiment, when the photoresist layer is removed, the thin film material layer 200 still covers the surface of the substrate 100, so that the photoresist residue or adhesion to the surface of the substrate can be effectively avoided; furthermore, the residual photoresist can be removed easily with the subsequent further etching of the thin film material layer 200.
Specifically, after the photoresist layer is removed, the portion of the thin film material layer 200 that needs to be removed is exposed, and the thin film material layer 200 may be etched by using a wet etching process and/or a dry etching process to remove the portion of the thin film material layer 200 that is not covered by the passivation layer 210. As described above, the passivation layer 210 and the passivated portion of the thin film material layer 200 have different etching selection ratios, so that the portion of the thin film material layer 200 that needs to be retained can be protected by the passivation layer 210 and cannot be removed, and the portion of the thin film material layer 200 that is not covered by the passivation layer is etched.
In a specific embodiment, the etching method and the etchant may be selected according to the material of the thin film material layer 200. For example, for a metal material layer, the metal material layer may be wet-etched by using a metal etchant, and for example, if the thin film material layer 200 is a nickel layer or a titanium layer, the thin film material layer 200 may be etched by using a nickel metal etchant or a titanium metal etchant. In addition, for the nickel metal layer, the photoresist stripping liquid can be directly sampled to etch the thin film material layer 200, so that the process is simplified and the cost is saved. Specifically, the photoresist layer may be removed using an EKC stripping solution, and then the exposed nickel metal layer may be removed using the EKC stripping solution.
Referring to fig. 5, a portion of the thin film material layer not covered by the passivation layer 210 is removed, and the portion covered by the passivation layer 210 is left to form a patterned thin film layer. It should be appreciated that the top of the patterned thin film layer is the passivation layer 210 formed after passivation, while the underlying portions of the passivation layer 210 remain unpassivated. Optionally, the passivation layer 210 may be further removed.
In this embodiment, taking the film material layer as a metal material layer as an example, after patterning the metal material layer, the method may further include: a thermal annealing process is performed. Specifically, through a thermal annealing process, metal in the metal material layer and silicon in the substrate can react to generate metal silicide, and an ohmic contact structure with low contact resistance is formed.
In summary, the method for patterning a film layer provided in this embodiment specifically performs plasma surface treatment on a portion of a thin film material layer that needs to be remained under a mask of a photoresist layer, so as to passivate a top surface of the portion to form a passivation layer, so that the formed passivation layer can protect the thin film material thereunder from being removed, and only a portion of the thin film material layer that is not covered by the passivation layer is removed, thereby implementing a process for patterning the thin film layer. Therefore, the photoresist can be effectively prevented from contacting the surface of the substrate, the risk of photoresist residue on the substrate is reduced, and the defects caused by the patterning process are reduced.
In addition, the method for patterning the film layer is further applied to a method for manufacturing a semiconductor device, and is also beneficial to improving the performance of the manufactured semiconductor device. That is, in a manufacturing method of a semiconductor device, a patterning process can be realized by using the patterning method as described above. For example, the patterning method as described above can be used to fabricate an ohmic contact structure on the substrate, which has a lower contact resistance between the fabricated ohmic contact structure and the substrate, and improves the contact performance.
It should be noted that, although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise.
Claims (10)
1. A method for patterning a film layer, comprising:
forming a film material layer on a substrate;
forming a patterned photoresist layer on the thin film material layer, wherein part of the thin film material layer is exposed out of the patterned photoresist layer;
performing plasma surface treatment on the exposed part of the thin film material layer to passivate the top of the exposed thin film material layer to form a passivation layer; and the number of the first and second groups,
and removing the photoresist layer and removing the part of the thin film material layer which is not covered with the passivation layer.
2. The method of claim 1, wherein the plasma surface treatment is performed using oxygen-containing ions to form an oxide layer on top of the thin film material layer.
3. The method of claim 1, wherein the plasma surface treatment is performed with nitrogen-containing ions to form a nitride layer on top of the thin film material layer.
4. The method for patterning a film according to claim 1, wherein after removing the photoresist layer, the thin film material layer is etched by a wet etching process and/or a dry etching process to remove a portion of the thin film material layer not covered with the passivation layer.
5. The method of claim 1, wherein the material of the thin film material layer comprises nickel.
6. The method for patterning a film according to claim 5, wherein after the photoresist layer is removed by using a photoresist stripper, the film material layer is etched by using the stripper to remove a portion of the film material layer not covered by the passivation layer.
7. The method of claim 1, wherein the thin film material layer is a metal material layer.
8. The method for patterning a film according to claim 7, further comprising, after removing a portion of the thin-film material layer not covered with the passivation layer: and (5) performing a thermal annealing process.
9. The method of patterning a film layer of claim 1, wherein the substrate comprises a silicon substrate or a silicon carbide substrate.
10. A method for manufacturing a semiconductor device, comprising a method for patterning a film layer according to any one of claims 1 to 9.
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| CN202210229014.5A CN114334642B (en) | 2022-03-10 | 2022-03-10 | Film patterning method and preparation method of semiconductor device |
| PCT/CN2022/140333 WO2023169041A1 (en) | 2022-03-10 | 2022-12-20 | Patterning method for film layer and preparation method for semiconductor device |
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| CN202210229014.5A CN114334642B (en) | 2022-03-10 | 2022-03-10 | Film patterning method and preparation method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023169041A1 (en) * | 2022-03-10 | 2023-09-14 | 绍兴中芯集成电路制造股份有限公司 | Patterning method for film layer and preparation method for semiconductor device |
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| CN114334642B (en) * | 2022-03-10 | 2022-06-17 | 绍兴中芯集成电路制造股份有限公司 | Film patterning method and preparation method of semiconductor device |
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2022
- 2022-03-10 CN CN202210229014.5A patent/CN114334642B/en active Active
- 2022-12-20 WO PCT/CN2022/140333 patent/WO2023169041A1/en unknown
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| CN1437237A (en) * | 2002-02-08 | 2003-08-20 | 旺宏电子股份有限公司 | Method of avoid fluorination of metal joint of semiconductor element |
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| US20140213060A1 (en) * | 2013-01-29 | 2014-07-31 | Chia-Ling Kao | Method of patterning a low-k dielectric film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023169041A1 (en) * | 2022-03-10 | 2023-09-14 | 绍兴中芯集成电路制造股份有限公司 | Patterning method for film layer and preparation method for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114334642B (en) | 2022-06-17 |
| WO2023169041A1 (en) | 2023-09-14 |
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