CN114326332B - Alignment mark for exposure device and alignment method thereof - Google Patents
Alignment mark for exposure device and alignment method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 235000012431 wafers Nutrition 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Abstract
The utility model provides an alignment mark system for an exposure device, wherein a first alignment area comprises a first channel with a width f obtained after alignment of a first polygon and a second polygon; the first polygon and the second polygon are similar polygons and have a radius difference f; the number of the similar polygon edges is even 2n, and n is 3-6; the second alignment area comprises a second channel with a width f, which is obtained by aligning the rectangular alignment mark and the embedded alignment mark; the width of the rectangular alignment mark is a, and the height is b; the embedded alignment mark comprises a transverse part area and a vertical part area, wherein the transverse part area comprises a first rectangle with the width of c and the thickness of d, the vertical part area comprises a second rectangle with the width of e and the height of g, c=a, g=b, and e=a-2 f; so that after alignment a second channel of width f is obtained. The utility model also provides an automatic alignment method and an exposure device. The utility model can realize the rapid alignment between the mask plate and the exposure object, and can be used for a manual exposure machine and an automatic exposure machine.
Description
Technical Field
The present utility model relates to the field of semiconductor manufacturing, and more particularly, to an alignment mark for an exposure apparatus, which can be used for manual and automatic alignment of an exposure machine.
Background
The alignment system is a very important core subsystem of the semiconductor lithography equipment, and the pattern and the precision of the alignment pattern directly determine the alignment precision achieved by the exposure machine. The exposure machine projects the circuit pattern on the mask plate on the surface of an exposure object such as a silicon wafer coated with photoresist by an optical projection method. The photoresist is modified after being irradiated by the light through the mask, and the modified photoresist realizes pattern transfer between the mask and an exposure object through processes such as development, etching and the like. Because the chip is composed of multiple layers of circuitry, integrated circuit chips typically require multiple exposures to complete. To ensure accurate positional relationship between the different circuit layers, accurate alignment of the mask layer (as shown in fig. 1) and the wafer pattern of the completed image transfer layer (as shown in fig. 2) must be achieved by alignment marks during the projection exposure process (as shown in fig. 3).
Currently there are manual alignment and automatic machine vision alignment exposure machines. The manual alignment is realized by aligning the pattern (figure 1) of the mask plate and the pattern (figure 2) of the silicon wafer (figure 3) by using a CCD camera and observing the patterns on the mask plate with two eyes. An automatic machine vision system realizes automatic alignment between a mask plate and an exposure object through a machine vision technology. In the automatic alignment system, the pattern of an alignment mark (figure 1) and the upper pattern of a silicon wafer (figure 2) are acquired through an imaging light path, the position of a mark image in an image coordinate system is obtained through digital image processing and a matching technology with a template image, and then the position of the mark image is converted into the coordinate of the mark in the physical world. The alignment between the mask and the exposure object is achieved by establishing a relative coordinate relationship between the mask and the marks on the exposure object by the coordinate relationship between them (fig. 3).
The prior art has the following problems in application:
(1) The alignment marks have no reference points, and the eyes for manual alignment are difficult to achieve the perfect symmetrical alignment of the figure 1 to the figure 2;
(2) The rotation of the mask plate and the silicon wafer after alignment of the patterns between the alignment marks at a certain angle cannot be identified, as shown in fig. 4.
Based on the above, the present application provides a technical solution to solve the above technical problems.
Disclosure of Invention
A first object of the present utility model is to obtain an alignment mark system for an exposure apparatus.
A second object of the present utility model is to obtain a method for the automatic alignment of wafers.
A third object of the present utility model is to obtain a manual alignment method of wafers.
A fourth object of the present utility model is to obtain an exposure apparatus.
A first aspect of the present utility model provides an alignment mark system for an exposure apparatus, forming a specific alignment pattern,
-the alignment pattern comprises a first alignment area comprising a first channel of width f resulting from alignment of the first polygon and the second polygon;
wherein the first polygon and the second polygon are similar polygons and the radius difference is a distance f; the number of the edges of the similar polygons is even 2n, and n is 3-6;
-the specific alignment pattern further comprises a second alignment area comprising a second channel of width f obtained by alignment of a rectangular alignment mark and a corresponding embedded alignment mark;
the width of the rectangular alignment mark is a, and the height is b;
the embedded alignment mark comprises a transverse part area and a vertical part area, wherein the transverse part area comprises a first rectangle with a width of c and a thickness of d, and the vertical part area comprises a second rectangle with a width of e and a height of g, so that c=a, g=b, and e=a-2 f; thereby, the second channel with the width f is obtained after the embedded alignment mark is aligned with the rectangular alignment mark.
In a preferred embodiment of the present utility model, the lateral and vertical regions of the embedded alignment mark form a T-shape.
In a preferred embodiment of the present utility model, both the first polygon and the second polygon are octagons, and n is 4.
In a specific embodiment of the present utility model, the octagon is a regular octagon.
In a preferred embodiment of the present utility model, the number of the rectangular alignment marks and the embedded alignment marks of the second alignment area is n.
In a preferred embodiment of the present utility model, the n second alignment areas are symmetrically distributed at the periphery of the first alignment area.
In a preferred embodiment of the present utility model, the first polygon of the first alignment area and the rectangular alignment mark of the second alignment area are provided on a reticle unit of the exposure apparatus,
the second polygon of the first alignment area and the embedded alignment mark of the second alignment area are arranged on a wafer unit of the exposure device.
A second aspect of the present utility model provides an automatic wafer alignment method, comprising the steps of:
the alignment mark system is adopted for alignment;
judging whether the alignment pattern is aligned or not by observing whether gaps exist in the alignment pattern or not;
and judging the deviation value of the exposure device after alignment by measuring the f value.
A third aspect of the present utility model provides a manual alignment method of a wafer, comprising the steps of;
the alignment mark system is adopted for alignment;
and judging whether the alignment pattern is aligned or not by observing whether gaps exist in the alignment pattern.
A fourth aspect of the present utility model provides an exposure apparatus, which includes the alignment mark system of the present utility model, and is a manual exposure apparatus or an automatic exposure apparatus.
In a preferred embodiment of the present utility model, the alignment mark system according to the present utility model is incorporated, and the exposure apparatus is a manual exposure apparatus and an automatic exposure apparatus.
The beneficial technical effects of the utility model are as follows:
the utility model can realize the rapid alignment between the mask plate and the exposure object, and can be used for a manual exposure machine and an automatic exposure machine. The manual exposure machine is suitable for quick identification by naked eyes and rotation of an angle, so that the basic requirement of quick alignment is met; for an automatic exposure machine, the offset of the upper layer pattern and the lower layer pattern after exposure can be detected in addition to the basic requirement of rapid alignment.
Drawings
The above features, technical features, advantages and implementation thereof will be further described in the following detailed description of preferred embodiments with reference to the accompanying drawings in a clearly understandable manner.
FIG. 1 is an alignment pattern on a reticle;
FIG. 2 is an alignment pattern on a silicon wafer;
FIG. 3 is a pattern of an exposure machine after aligning a reticle and a silicon wafer;
FIG. 4 is a pattern of deviations after the exposure machine aligns the reticle and the wafer;
FIG. 5 is an alignment pattern on a reticle of the present utility model;
FIG. 6 is an alignment pattern on a silicon wafer of the present utility model;
FIG. 7 is a pattern of an exposure machine of the present utility model after aligning a reticle with a silicon wafer;
FIG. 8 is a pattern of deviations after aligning a reticle with a wafer by the exposure machine of the present utility model.
Detailed Description
In the utility model, the inventor has conducted extensive and intensive experiments, and found that the rapid and accurate positioning can be achieved by the cooperative matching of the mask pattern and the wafer (mainly silicon wafer) pattern, and the patterns can be further skillfully designed, so that the mask pattern can be used for manual and automatic exposure machines. Aiming at the manual exposure machine, whether the alignment is finished or not can be rapidly identified; for an automatic exposure machine, the offset of the upper layer pattern and the lower layer pattern after exposure can be detected.
Therefore, the technical problems to be solved by the utility model are as follows: how to achieve a fast alignment between the reticle and the exposure object and at the same time be applicable to both manual and automatic exposure machines. The manual exposure machine can be suitable for quick visual recognition and can recognize the rotation of angles, so that the basic requirement of quick alignment is met; for an automatic exposure machine, the offset of the upper layer pattern and the lower layer pattern after exposure can be detected in addition to the basic requirement of rapid alignment.
The technical conception of the utility model is as follows: the wafer pattern is obtained after the first pattern of the first mask plate is transferred, and after the second patterns of the second mask plate are sleeved together, the deviation of alignment can be rapidly judged according to the distance f value of the formed patterns.
Secondly, ingenious design figure, rotation alignment deviation in a plurality of directions can be judged to a plurality of f values, and through the setting of second alignment region, the gap is easy to find when alignment has the deviation. While it is difficult to identify objects smaller than 0.01 mm from a microscopic view, the utility model makes the gaps a reverse color result, and reduces the difficulty of visual identification.
Again, it is preferable that the second alignment region be specifically designed (e.g., a mating alignment of the outer rectangle with the inner T-shape) so that the deviations are more easily found.
The alignment patterns of the prior art are difficult to be applied to both manual alignment and automatic counter-rotation of the exposure machine. However, in practical application, this scenario is often happened, and it is very difficult to achieve complete symmetry of the center when manual alignment is required in the prior art, which is time-consuming and laborious.
The term "or" as used herein includes the relationship of "and" unless specifically stated and defined otherwise. The sum corresponds to the boolean logic operator AND, the OR corresponds to the boolean logic operator OR, AND the AND is a subset of OR.
The terms "connected," "connected," and "connected" in this application are to be construed broadly, as they relate to a fixed connection, as well as to an interconnection between two elements via an intermediary, or to an interconnection between two elements, unless explicitly stated or defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element could be termed a second element without departing from the teachings of the present inventive concept.
The following details various aspects of the utility model:
alignment mark system
A first aspect of the present utility model provides an alignment mark system for an exposure apparatus, forming a specific alignment pattern, the alignment pattern including a first alignment region including a first channel having a width f obtained after alignment of a first polygon and a second polygon; wherein the first polygon and the second polygon are similar polygons and the radius difference is a distance f; the number of the edges of the similar polygons is even 2n, and n is 3-6; the specific alignment pattern further comprises a second alignment area, wherein the second alignment area comprises a second channel with the width f, which is obtained by aligning the rectangular alignment mark and the corresponding embedded alignment mark; the width of the rectangular alignment mark is a, and the height is b; the embedded alignment mark comprises a transverse part area and a vertical part area, wherein the transverse part area comprises a first rectangle with a width of c and a thickness of d, and the vertical part area comprises a second rectangle with a width of e and a height of g, so that c=a, g=b, and e=a-2 f; thereby, the second channel with the width f is obtained after the embedded alignment mark is aligned with the rectangular alignment mark.
In the utility model, the positive and negative of the mask plate and the wafer are not limited, and the utility model can be achieved.
In the present utility model, the wafer is not limited to a silicon wafer, and may be various non-silicon wafers.
In the present utility model, the alignment pattern may be rotated by a certain angle (for example, 45 degrees), so long as the alignment can be performed on the X axis and the Y axis, the object of the present utility model can be achieved, and therefore, the present utility model should also be within the scope of protection.
The radius of the first polygon is typically greater than the second polygon by an f width so that the second polygon may be embedded within the first polygon. It should be understood that the first and second designations are for ease of understanding by the skilled artisan. So long as the two can be overprinted to obtain an alignment pattern.
In a preferred embodiment of the present utility model, the lateral and vertical regions of the embedded alignment mark form a T-shape.
In a preferred embodiment of the present utility model, both the first polygon and the second polygon are octagons, and n is 4.
In a specific embodiment of the present utility model, the octagon is a regular octagon.
In a preferred embodiment of the present utility model, the number of the rectangular alignment marks and the embedded alignment marks of the second alignment area is n.
In a preferred embodiment of the present utility model, the n second alignment areas are symmetrically distributed at the periphery of the first alignment area.
In a preferred embodiment of the present utility model, the first polygon of the first alignment area and the rectangular alignment mark of the second alignment area are provided on a reticle unit of the exposure apparatus,
the second polygon of the first alignment area and the embedded alignment mark of the second alignment area are arranged on a wafer unit of the exposure device.
In the utility model, the inventor has conducted extensive and intensive experiments, and found that the rapid and accurate positioning can be achieved by the cooperative matching of the mask pattern and the wafer (mainly silicon wafer) pattern, and the patterns can be further skillfully designed, so that the mask pattern can be used for manual and automatic exposure machines. Aiming at the manual exposure machine, whether the alignment is finished or not can be rapidly identified; for an automatic exposure machine, the offset of the upper layer pattern and the lower layer pattern after exposure can be detected.
Alignment method
The utility model provides an automatic alignment method of a wafer, which comprises the following steps: the alignment mark system is adopted for alignment; judging whether the alignment pattern is aligned or not by observing whether gaps exist in the alignment pattern or not; and judging the deviation value of the exposure device after alignment by measuring the f value.
The utility model also provides a manual alignment method of the wafer, which comprises the following steps of; the alignment mark system is adopted for alignment; and judging whether the alignment pattern is aligned or not by observing whether gaps exist in the alignment pattern.
The above methods can be used simultaneously.
Exposure apparatus
The utility model provides an exposure device, which comprises the alignment mark system, and is a manual exposure device or an automatic exposure device.
In a preferred embodiment of the present utility model, the alignment mark system according to the present utility model is incorporated, and the exposure apparatus is a manual exposure apparatus and an automatic exposure apparatus.
Based on the present application, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the following description will explain the specific embodiments of the present utility model with reference to the accompanying drawings. It is evident that the drawings in the following description are only examples of the utility model, from which other drawings and other embodiments can be obtained by a person skilled in the art without inventive effort.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concepts of the application by way of illustration, and only the components related to the application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details. The terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining a description of "a first," "a second," etc. may explicitly or implicitly include one or more such feature. In the description of the present utility model, unless otherwise indicated, the meaning of "a plurality" is two or more.
It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The words "inner" and "outer" are used to refer to directions toward or away from, respectively, the geometric center of a particular component.
One embodiment of the alignment mark of the present utility model is as follows:
as shown in fig. 5 and 6, an example of an alignment mark system for an exposure apparatus of the present utility model is shown, the alignment marks being provided on a reticle and an underlying silicon wafer, respectively, of the exposure apparatus.
As shown in fig. 5, the pattern on the mask is a first polygon (octagon, i.e., n=4), that is, the middle area is a hollowed-out octagon, and 4 raised hollows are formed in the up-down, left-right directions of the middle octagon. The hollow of the bulge is a rectangular alignment mark, the width is a, and the height is b.
As shown in fig. 6, the pattern on the lower layer silicon wafer is a second polygon (a central octagon), and 4 symmetrical "convex" shapes (different angles can also be regarded as "T" shapes) are made in the up-down, left-right directions.
The first polygon of fig. 5 is similar to the second polygon of fig. 6 and has radii differing by a distance f.
The symmetrical "convex" shape may be embedded in a rectangular alignment mark as shown in fig. 5, thereby achieving alignment. The "convex" shape alignment marks include lateral and vertical regions.
It should be appreciated that in other embodiments, the "convex" shaped embedded alignment marks may be other shapes including a lateral region and a vertical region, so long as the lateral region includes a first rectangle having a width c and a thickness d, and the vertical region includes a second rectangle having a width e and a height g, where c=a, g=b, e=a-2 f, so as to be aligned in the X-axis and the Y-axis.
Fig. 5 and 6 show specific examples of the "convex" shaped embedded alignment marks. The value a of fig. 5 is equal to the value c of fig. 6, the value a of fig. 5 is equal to 3 times the value e of fig. 6, and the value b of fig. 5 is equal to twice the value of fig. 6 d.
As shown in fig. 7, an example of an alignment pattern after the completion of the overlay of the present utility model is shown. The alignment pattern consists of two parts, wherein the first part is a pattern with the width f obtained by aligning a first polygon shown in fig. 5 and a second polygon shown in fig. 6; the second part is a pattern with the width f, which is obtained by aligning the rectangular alignment mark and the corresponding embedded alignment mark. The size of the f-value of the non-pattern area is the same in all directions.
In the manufacturing process, fig. 5 and 6 are performed on two different masks, and the pattern of fig. 6 is performed on a silicon wafer through a first layer of photoetching technology. The latter exposure machine is required to align the figure of the reticle of fig. 5 with the wafer with the pattern of fig. 6 when performing the photolithography of the layer of fig. 5. The pattern of figure 5 of the mask plate on the exposure machine and the pattern of figure 6 on the silicon wafer are sleeved together and aligned in a manual or automatic mode, as shown in figure 7, if alignment is deviated, a gap exists in the outer ring area of figure 8, and the manual and automatic alignment exposure machines can easily find alignment problems. After alignment is completed, the photoetching process is carried out, the pattern of fig. 5 also achieves the effect that the pattern of fig. 7 is presented on the silicon wafer, and the deviation value of the exposure machine after alignment can be judged by measuring the f value of fig. 7.
Discussion of results
As shown in fig. 8, it can be clearly seen that the present utility model improves overlay accuracy. When the alignment is not performed, the alignment gap can be easily observed through a CCD camera to enable the patterns of the mask plate and the silicon wafer to be aligned and overlapped. The alignment pattern of the utility model can stably observe the deviation of the micron level through the matching of the mask plate and the alignment pattern of the wafer.
When the exposure machine is manually aligned, the alignment mark can easily find four raised areas of the positioning chart 6 in the inner 4 raised hollowed-out areas of the chart 5, and as the widths of the two patterns are consistent, the alignment in 4 directions can be easily realized, and when the alignment is deviated, a gap is easily found as in the chart 8, and the readiness or readiness can be easily judged.
In the case of the automatic alignment machine, the alignment mark should be uniform color in all areas of the peripheral area, such as fig. 7, after alignment, and a gap is easily found when alignment is deviated, such as fig. 8, so that the automatic machine vision system can determine whether alignment is accurate.
After alignment, as shown in fig. 7, the f-values of the directions can be measured to determine the alignment deviation. The method can save the space of the silicon wafer without additionally placing marks for measuring alignment deviation.
It should be noted that the above embodiments can be freely combined as needed. The foregoing is merely a preferred embodiment of the present utility model and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present utility model, which are intended to be comprehended within the scope of the present utility model.
Claims (10)
1. An alignment mark system for an exposure apparatus, characterized in that a specific alignment pattern is formed,
the alignment pattern comprises a first alignment area, wherein the first alignment area comprises a first channel with the width f, which is obtained by aligning a first polygon and a second polygon;
wherein the first polygon and the second polygon are similar polygons and the radius difference is a distance f; the number of the edges of the similar polygons is even 2n, and n is 3-6;
the specific alignment pattern further comprises a second alignment area, wherein the second alignment area comprises a second channel with the width f, which is obtained by aligning the rectangular alignment mark and the corresponding embedded alignment mark;
the width of the rectangular alignment mark is a, and the height is b;
the embedded alignment mark comprises a transverse part area and a vertical part area, wherein the transverse part area comprises a first rectangle with a width of c and a thickness of d, and the vertical part area comprises a second rectangle with a width of e and a height of g, so that c=a, g=b, and e=a-2 f; thereby, the second channel with the width f is obtained after the embedded alignment mark is aligned with the rectangular alignment mark.
2. The alignment mark system of claim 1 wherein said lateral and vertical regions of said embedded alignment mark form a T-shape.
3. The alignment mark system of claim 1 wherein said first polygon and said second polygon are each octagons and n is 4.
4. The alignment mark system of any of claims 1-3, wherein the number of said rectangular alignment marks and said embedded alignment marks of said second alignment area is n each.
5. The alignment mark system of claim 4, wherein the n second alignment areas are symmetrically distributed around the periphery of the first alignment area.
6. An alignment mark system as claimed in any one of claims 1-3 wherein,
the first polygon of the first alignment area and the rectangular alignment mark of the second alignment area are arranged on a mask plate unit of the exposure device,
the second polygon of the first alignment area and the embedded alignment mark of the second alignment area are arranged on a wafer unit of the exposure device.
7. A method for automatically aligning a wafer, comprising the steps of:
alignment using the alignment mark system according to any one of claims 1-6;
judging whether the alignment pattern is aligned or not by observing whether gaps exist in the alignment pattern or not;
and judging the deviation value of the exposure device after alignment by measuring the f value.
8. A method for manually aligning a wafer, comprising the steps of;
alignment using the alignment mark system according to any one of claims 1-6;
and judging whether the alignment pattern is aligned or not by observing whether gaps exist in the alignment pattern.
9. An exposure apparatus comprising the alignment mark system according to any one of claims 1 to 6, wherein the exposure apparatus is a manual exposure apparatus or an automatic exposure apparatus.
10. The exposure apparatus according to claim 9, comprising the alignment mark system according to any one of claims 1 to 6, wherein the exposure apparatus is a manual exposure apparatus and an automatic exposure apparatus.
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| CN202210106246.1A CN114326332B (en) | 2022-01-28 | 2022-01-28 | Alignment mark for exposure device and alignment method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0245911A (en) * | 1988-08-08 | 1990-02-15 | Nippon Telegr & Teleph Corp <Ntt> | X-ray exposure mask and manufacture thereof |
| EP1162507A2 (en) * | 2000-06-08 | 2001-12-12 | Kabushiki Kaisha Toshiba | Alignment method, overlay deviation inspection method and photomask |
| KR20040011394A (en) * | 2002-07-30 | 2004-02-05 | 캐논 가부시끼가이샤 | Distortion measurement method and exposure apparatus |
| WO2006044320A2 (en) * | 2004-10-18 | 2006-04-27 | Accent Optical Technologies, Inc. | Overlay measurement target |
| JP2009003381A (en) * | 2007-06-25 | 2009-01-08 | Funai Electric Co Ltd | Electrode connection structure and liquid crystal display unit |
| CN112882358A (en) * | 2020-12-28 | 2021-06-01 | 南通大学 | Alignment mark design for aligning exposure system in PDMS microfluidic chip processing and manufacturing |
-
2022
- 2022-01-28 CN CN202210106246.1A patent/CN114326332B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0245911A (en) * | 1988-08-08 | 1990-02-15 | Nippon Telegr & Teleph Corp <Ntt> | X-ray exposure mask and manufacture thereof |
| EP1162507A2 (en) * | 2000-06-08 | 2001-12-12 | Kabushiki Kaisha Toshiba | Alignment method, overlay deviation inspection method and photomask |
| CN1329357A (en) * | 2000-06-08 | 2002-01-02 | 株式会社东芝 | Aligning method, alignment checking method and photomask |
| KR20040011394A (en) * | 2002-07-30 | 2004-02-05 | 캐논 가부시끼가이샤 | Distortion measurement method and exposure apparatus |
| WO2006044320A2 (en) * | 2004-10-18 | 2006-04-27 | Accent Optical Technologies, Inc. | Overlay measurement target |
| JP2009003381A (en) * | 2007-06-25 | 2009-01-08 | Funai Electric Co Ltd | Electrode connection structure and liquid crystal display unit |
| CN112882358A (en) * | 2020-12-28 | 2021-06-01 | 南通大学 | Alignment mark design for aligning exposure system in PDMS microfluidic chip processing and manufacturing |
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| CN114326332A (en) | 2022-04-12 |
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