CN114318522A - Cooling device of semiconductor cavity and semiconductor process equipment - Google Patents
Cooling device of semiconductor cavity and semiconductor process equipment Download PDFInfo
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- CN114318522A CN114318522A CN202111591828.5A CN202111591828A CN114318522A CN 114318522 A CN114318522 A CN 114318522A CN 202111591828 A CN202111591828 A CN 202111591828A CN 114318522 A CN114318522 A CN 114318522A
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Abstract
The invention discloses a cooling device of a semiconductor chamber and semiconductor process equipment, wherein the cooling device is used for cooling the semiconductor chamber and comprises a shell, a heat exchanger and a gas driving mechanism; the shell encloses to form an accommodating space and an exhaust port communicated with the accommodating space, and the semiconductor cavity is positioned in the accommodating space; the heat exchanger is positioned in the accommodating space and used for exchanging heat for the gas in the accommodating space; the gas driving mechanism is positioned in the accommodating space and used for driving the gas in the accommodating space to be discharged from the gas outlet. The scheme can solve the problem of poor safety of the semiconductor chamber.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a cooling device of a semiconductor cavity and semiconductor process equipment.
Background
The epitaxial wafer is a wafer in which an epitaxial layer is vapor-grown on the surface of a semiconductor wafer. In the related art, a silicon layer is produced by reducing a wafer with hydrogen gas by introducing trichlorosilane into a reaction chamber of a semiconductor chamber.
However, in the production process of the epitaxial wafer, the reaction chamber needs to be cooled, and in the related art, the semiconductor chamber includes an inner quartz tube and an outer quartz tube, the outer quartz tube is sleeved outside the inner quartz tube, the inner quartz tube surrounds the reaction chamber, an interlayer space is formed by the inner side wall of the outer quartz tube and the outer side wall of the inner quartz tube, and cooling water can be introduced into the interlayer space for cooling the reaction chamber.
However, due to the low assembling precision of the inner quartz tube and the outer quartz tube, the cooling water in the interlayer space is easy to overflow into the inner quartz tube, thereby easily causing serious safety accidents of the semiconductor chamber, and thus making the safety of the semiconductor chamber poor.
Disclosure of Invention
The invention discloses a cooling device of a semiconductor cavity and semiconductor process equipment, which aim to solve the problem of poor safety of the semiconductor cavity.
In order to solve the problems, the invention adopts the following technical scheme:
a cooling apparatus for a semiconductor chamber for cooling the semiconductor chamber, the cooling apparatus comprising:
the semiconductor device comprises a shell, a semiconductor cavity and a plurality of semiconductor chips, wherein the shell encloses to form an accommodating space and an exhaust port communicated with the accommodating space, and the semiconductor cavity is positioned in the accommodating space;
the heat exchanger is positioned in the accommodating space and is used for exchanging heat for the gas in the accommodating space;
and the gas driving mechanism is positioned in the accommodating space and is used for driving the gas in the accommodating space to be discharged from the gas outlet.
The semiconductor processing equipment comprises a semiconductor chamber and the cooling device, wherein the semiconductor chamber is located in the accommodating space.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the cooling device disclosed by the invention, the semiconductor chamber is contacted with the gas in the accommodating space, and the gas takes away part of the heat of the semiconductor chamber. The hot gas enters the heat exchanger from the gas inlet of the heat exchanger, is discharged into the accommodating space from the gas outlet after heat exchange in the heat exchanger, the temperature of the gas subjected to heat exchange in the heat exchanger is reduced, and the heat of the hot gas is taken away by the heat exchanger, so that the cooling of the semiconductor cavity is realized. Meanwhile, the gas driving mechanism can drive the gas in the accommodating space to flow, so that the flow rate of the gas in the accommodating space is increased, the hot gas is easier to discharge, and the cooling effect on the semiconductor cavity is further improved. This scheme passes through the heat exchanger and realizes the cooling to the semiconductor cavity with gaseous actuating mechanism, compares in the water-cooled mode of intermediate layer among the correlation technique, does not have the cooling water to spill over in this scheme, is difficult to lead to the semiconductor cavity to intake, is difficult to consequently make the semiconductor cavity take place the safety failure to the security of semiconductor cavity has been improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a semiconductor chamber according to an embodiment of the disclosure;
FIG. 2 is a top view of a semiconductor chamber disclosed in an embodiment of the present invention;
fig. 3 is a sectional view taken along the line a-a in fig. 2.
Description of reference numerals:
110-shell, 111-containing space, 112-air outlet, 113-top plate, 113 a-first plate, 113 b-second plate, 114-barrel, 116-air outlet, 120-heat exchanger, 121-air inlet, 122-air outlet, 130-air driving mechanism, 140-observation window component, 141-transparent plate, 142-frame, 142-top plate, bottom plate, top plate, bottom plate,
200-semiconductor chamber, 210-upper hearth assembly, 220-lower hearth assembly, 230-quartz tube.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 3, the embodiment of the invention discloses a cooling apparatus for a semiconductor chamber, which is used for cooling a semiconductor chamber 200. The disclosed cooling device includes a housing 110, a heat exchanger 120, and a gas driving mechanism 130.
The housing 110 provides a mounting base for other components of the cooling apparatus, while the housing 110 also provides a cooling space for the semiconductor chamber 200. The housing 110 encloses an accommodating space 111 and an exhaust port 112 communicating with the accommodating space 111, and the semiconductor chamber 200 is located in the accommodating space 111. The accommodating space 111 is an installation space for other components of the cooling apparatus, and is also a cooling space of the semiconductor chamber 200. The gas outlet 112 is used to discharge the gas in the accommodating space 111.
The heat exchanger 120 is located in the accommodating space 111, and the heat exchanger 120 is used for exchanging heat for the gas in the accommodating space 111. Specifically, the heat exchanger 120 may be disposed on an inner sidewall of the case 110. The gas in the accommodating space 111 enters the heat exchanger 120 from the gas inlet 121 of the heat exchanger 120 for heat exchange and then is discharged from the gas outlet 122 of the heat exchanger 120. The specific heat exchange process is as follows: the semiconductor chamber 200 is in contact with the gas in the accommodating space 111, and the gas takes away a part of heat of the semiconductor chamber 200. The hot gas enters the heat exchanger 120 from the gas inlet 121 of the heat exchanger 120, exchanges heat in the heat exchanger 120, and is discharged to the accommodating space 111 from the gas outlet 122, the temperature of the gas after heat exchange in the heat exchanger 120 is reduced, and the heat of the hot gas is taken away by the heat exchanger 120, so that the semiconductor chamber 200 is cooled.
The gas driving mechanism 130 is located in the accommodating space 111, and the gas driving mechanism 130 is used for driving the gas in the accommodating space 111 to be discharged from the gas outlet 112. At this time, the gas driving mechanism 130 can drive the flow of the gas in the accommodating space 111, thereby increasing the flow rate of the gas in the accommodating space 111, so that the hot gas is more easily discharged, and the cooling effect of the semiconductor chamber 200 is further improved.
Alternatively, the gas driving mechanism 130 may be an air bag, an air cylinder, or a fan, and of course, other structures for driving the gas flow may be adopted, which is not limited herein.
The embodiment disclosed in the present application uses the heat exchanger 120 and the gas driving mechanism 130 to jointly cool the semiconductor chamber 200, so that the semiconductor chamber 200 has a better cooling effect.
In addition, compared with the interlayer water cooling mode in the related art, no cooling water overflows in the scheme, so that water is not easy to enter the semiconductor chamber 200, the semiconductor chamber 200 is not easy to have safety failure, and the safety of the semiconductor chamber 200 is improved.
In addition, the heat exchanger 120 and the gas driving mechanism 130 are adopted to jointly cool the semiconductor chamber 200, so that the semiconductor chamber 200 does not need to be provided with an interlayer, the semiconductor chamber 200 can be of a single-layer structure, parts for forming the semiconductor chamber are reduced, and the assembly process of the semiconductor chamber is simplified.
In the related art, the semiconductor chamber 200 has a double-layered quartz tube 230 structure, and thus it is necessary to ensure the coaxiality of the inner quartz tube and the outer quartz tube, which makes the assembly difficult. In the present application, since the cooling device employs the heat exchanger 120 and the gas driving mechanism 130, there is no need to provide an interlayer space, and thus the semiconductor chamber 200 may have a single-layer structure, thereby simplifying the assembly difficulty.
In this application, the gas in the accommodation space 111 is discharged after heat exchange of the heat exchanger 120, so that the temperature of the discharged gas is low, and further, the atmospheric environment is not easily polluted.
In the above embodiment, the heat exchanger 120 may exchange heat in a water-cooling manner, specifically, the housing 110 may be provided with a water inlet pipe and a water return pipe, the water inlet pipe and the water return pipe are both communicated with the heat exchanger 120, at this time, the cooling water is introduced into the heat exchanger 120 from the water inlet pipe, and after heat exchange is performed by the heat exchanger 120, the cooling water is discharged from the water return pipe, so that the cooling water circulates in the heat exchanger 120.
It should be noted that the cooling water in the heat exchanger 120 circulates in the heat exchanger 120, the heat exchanger 120 and the semiconductor chamber 200 are two separate parts, and the heat exchanger 120 and the semiconductor chamber 200 are not assembled in an opposite manner, so that the cooling water in the heat exchanger 120 is not easy to enter the semiconductor chamber 200.
Alternatively, the exhaust port 112 may be in communication with a gas collection device at the plant side, with the exhausted gas being collected for processing by the plant side. At this time, the exhausted hot gas is introduced into a gas collecting device at the plant service end for collection, so that the hot gas is not easy to gather around the semiconductor chamber 200, the ambient temperature around the semiconductor chamber 200 is further reduced, and the use of operators is not easy to be influenced.
In the above scheme, the heat exchange efficiency of the heat exchanger 120 can be controlled by controlling the flow rate of the cooling water introduced into the heat exchanger 120, so that the cooling efficiency of the cooling device is adjusted. In addition, the heat exchanger 120 can be switched on and off, so that two heat exchange modes of only the gas driving mechanism 130 for heat exchange and simultaneous heat exchange between the heat exchanger 120 and the gas driving mechanism 130 are realized, and the cooling efficiency of the cooling device is adjusted.
In an alternative embodiment, as shown in FIG. 3, the heat exchanger 120 is disposed near the top of the housing 110, and the exhaust port 112 may open at the bottom of the housing 110. In this scheme, because the volume of gas after being heated expands, the gas with higher temperature floats upwards, so heat exchanger 120 sets up the top position that is close to casing 110 and is more convenient for the gas heat transfer with higher temperature. Since the weight of the gas having a lower temperature is greater than that of the gas having a higher temperature, the gas after heat exchange sinks. The exhaust port 112 is opened at the bottom of the housing 110 to facilitate the gas exhaust.
In addition, the gas after heat exchange can perform secondary cooling on the semiconductor chamber 200 in the sinking process, so that the cooling performance of the cooling device is further improved.
Further, the top of the housing 110 may be opened with a vent 116, the external environment is communicated with the accommodating space 111 through the vent 116, and cold air in the external environment enters the accommodating space 111 through the vent 116. At this time, the cold air in the external environment can enter into the accommodating space 111 through the vent 116, so that the cold air in the external environment and the internal hot gas can be convected, thereby further improving the cooling performance of the cooling device. Meanwhile, after the hot gas in the accommodating space 111 is discharged, the cold air in the environment can be supplemented into the accommodating space 111, so that the pressure in the accommodating space 111 is stable, and further the heat exchange efficiency of the semiconductor chamber 200 is balanced.
To further improve the cooling performance, in an alternative embodiment, the gas driving mechanism 130 may be disposed on the heat exchanger 120 and communicated with the gas outlet 122 of the heat exchanger 120. In this scheme, the gas driving mechanism 130 can accelerate the flow rate of the gas at the gas outlet 122 of the heat exchanger 120, at this time, the flow rate of the gas at the gas outlet 122 is faster, the pressure at the gas outlet 122 is lower, and the pressure at the gas inlet 121 is higher, so that in order to balance the pressures of the gas inlet 121 and the gas outlet 122, the flow rate of the gas at the gas inlet 121 is also accelerated, and therefore, the rate of the gas entering the heat exchanger 120 can be increased, and the cooling efficiency of the cooling device is increased.
In addition, the temperature of the gas after heat exchange by the heat exchanger 120 is low, and the gas driving mechanism 130 drives the gas after heat exchange to flow in the accommodating space 111, so that the gas after heat exchange can absorb the heat of the semiconductor chamber 200 again, thereby further reducing the temperature of the semiconductor chamber 200 and further improving the cooling effect of the semiconductor chamber 200.
In another alternative embodiment, the gas inlet 121 may be disposed toward the semiconductor chamber 200, an axis of the gas inlet 121 may intersect an axis of the gas outlet 122, and the gas outlet 122 may be disposed toward a side of the gas outlet 112. The air intake direction of the heat exchanger 120 is shown by the arrows in fig. 2. In this embodiment, since the gas temperature at the side close to the semiconductor chamber 200 is higher, the gas inlet 121 is disposed toward the semiconductor chamber 200, so that the gas with higher temperature can enter the heat exchanger 120, and thus the gas temperature in the accommodating space 111 can be effectively reduced, thereby improving the cooling effect of the semiconductor chamber.
In addition, the axis of the gas inlet 121 may intersect with the axis of the gas outlet 122, and at this time, the gas in the heat exchanger 120 is not easy to flow back, so that the gas in the heat exchanger 120 is prevented from flowing back, and the cooling performance of the cooling device is improved.
In addition, the gas outlet 122 is disposed toward one side of the gas outlet 112, in which case the gas is more conveniently discharged out of the accommodating space 111.
Alternatively, the number of the exhaust ports 112 may be plural, and the plural exhaust ports 112 may be spaced apart in the circumferential direction of the housing. At this time, the gas discharge rate in the accommodating space 111 is increased.
In order to further improve the cooling performance of the cooling device, in another alternative embodiment, the number of the heat exchangers 120 may be multiple, and the multiple heat exchangers 120 may be distributed at intervals along the circumference of the casing 110. The number of the gas driving mechanisms 130 is plural, and the plural gas driving mechanisms 130 are distributed at intervals along the circumferential direction of the housing 110. The plurality of heat exchangers 120 and the plurality of gas driving mechanisms 130 may be disposed in one-to-one correspondence. In this embodiment, the plurality of heat exchangers 120 and the plurality of gas driving mechanisms 130 can increase the cooling range, and at the same time, can increase the cooling rate, thereby improving the cooling performance of the cooling device.
In order to observe the condition in the accommodating space 111 conveniently and to facilitate an operator to find a problem in the operation process of the semiconductor chamber in time, in another alternative embodiment, the housing 110 may be provided with a through hole, the through hole may be provided with an observation window assembly 140, and the observation window assembly 140 may be used to observe the operation state of the semiconductor chamber 200 in the accommodating space 111. The operating conditions include, but are not limited to, wear conditions of the components of the semiconductor chamber 200, temperature, and other parameters that affect the operation of the semiconductor chamber 200. An operator can observe the operation condition of the components of the semiconductor chamber 200 through the observation assembly, so that the operator can conveniently perform emergency treatment such as shutdown and the like, and the safety and the reliability of the operation of the semiconductor chamber are improved.
Alternatively, the viewing window assembly 140 may be a clear glass, clear plastic, or the like. A transparent glass, a transparent plastic, or the like may cover the through hole, so that the inside of the accommodating space 111 can be observed through the transparent glass, the transparent plastic, or the like.
To facilitate maintenance of the semiconductor chamber 200, in another alternative embodiment, the viewing window assembly 140 may include a transparent plate 141 and a frame 142, the frame 142 may be disposed around the transparent plate 141, and one side of the frame 142 may be hinged with the housing 110. In this scheme, the operating personnel can observe the operating condition of the semiconductor chamber 200 in the accommodating space 111 through the transparent plate 141, when the operating condition is unstable, the operating personnel can rotate the frame 142, and can expose the through hole through rotating the frame 142, and the operating personnel can repair or replace the parts of the semiconductor chamber 200 through the through hole, so that the semiconductor chamber 200 can be repaired conveniently, and the maintainability of the semiconductor process equipment can be improved.
Alternatively, the transparent plate 141 may be made of transparent glass, transparent plastic, or the like, and of course, the transparent plate 141 may also be made of other transparent materials, which is not limited herein. The transparent plate 141 and the frame 142 may be connected by riveting, screwing, bonding, clipping, etc.
Alternatively, the frame 142 and the housing 110 may be hinged by a hinge, and may be hinged by a hinge shaft, and the specific manner of hinging the frame 142 and the housing 110 is not limited herein.
In another alternative embodiment, the housing 110 may further be provided with a lock, the lock may be disposed on a side opposite to the hinge joint of the frame 142 and the housing 110, and the frame 142 and the housing 110 may be locked by the lock, so that when the semiconductor chamber is in normal operation, the lock locks the observation window assembly 140, so that the observation window assembly 140 is not opened, and thus the misoperation of an operator is not easily caused, thereby improving the operation safety of the semiconductor chamber.
In addition, in order to facilitate the operator to open the observation window assembly 140, a handle may be further disposed on the frame 142, and the operator may open the observation window assembly 140 through the handle, so that the operator may open the observation window assembly 140 more conveniently.
In the above embodiment, the housing 110 may be an integrated structure, but the integrated housing 110 is difficult to demold and difficult to manufacture, and meanwhile, the integrated housing 110 is easy to interfere with the semiconductor chamber 200 during the installation process, thereby increasing the difficulty of assembly.
Based on this, in another alternative embodiment, the housing 110 may include a top plate 113 and a cylinder 114, the cylinder 114 may include at least two arc plates, the at least two arc plates may be spliced together, the top plate 113 may cover the top of the cylinder 114, the top plate 113 may be provided with a mounting hole, and a portion of the semiconductor chamber 200 may be located in the mounting hole.
A specific mounting operation may be to first mount the cylinder 114 outside the semiconductor chamber 200 and then mount the top plate 113.
In this scheme, the housing 110 has a split structure, so several parts of the housing 110 are manufactured separately, thereby making the housing 110 less difficult to manufacture.
In addition, the cylinder 114 is formed by splicing a plurality of arc-shaped plates, and during assembly, the cylinder directly moves towards the semiconductor cavity 200 from two sides, so that the semiconductor cavity 200 is sleeved, interference between the cylinder and the semiconductor cavity 200 is not easy to occur, assembly of the cooling device is facilitated, and assembly difficulty of the cooling device is reduced.
Alternatively, the cylinder 114 may include a first arc, a second arc and a third arc, the arc of the first arc may be 180 °, and the arc of the second arc and the third arc may be 90 °. Of course, the cylinder 114 may also include other numbers of arc plates, and the radian of the arc plates may also be other degrees, which is not limited herein.
Further, the top plate 113 may include a first plate 113a and a second plate 113b, the first plate 113a has a first opening, the second plate 113b has a second opening, and the first opening and the second opening enclose the mounting hole. This solution makes the processing and manufacturing of the housing 110 simpler and more convenient.
In the above embodiment, the gas driving mechanism 130 may be an air bag and an air cylinder, both of which are inflated and deflated by inflation, and the air bag and the air cylinder need to be inflated and deflated, so that the air bag and the air cylinder cannot be inflated continuously, resulting in poor cooling effect of the cooling device.
For this reason, in another alternative embodiment, the air driving mechanism 130 may be a fan, and the fan drives the air by rotating the fan blades, so that the fan can provide a continuous driving force, thereby achieving a better cooling effect of the cooling device. Optionally, the fan may be an axial flow fan, and at this time, the fan blades push the air to flow in the same direction as the shaft of the axial flow fan, so that the air can flow in a relatively concentrated direction, and the air is conveniently discharged. Of course, other types of fans are also possible, and are not limited herein.
Based on the cooling device of any one of the above embodiments of the present invention, an embodiment of the present invention further discloses a semiconductor process equipment, and the disclosed semiconductor process equipment has the cooling device of any one of the above embodiments. The semiconductor processing apparatus disclosed herein further includes a semiconductor chamber 200, the semiconductor chamber 200 being located in the accommodating space 111.
The semiconductor chamber 200 is opened with a reaction chamber in which the wafer is grown with an epitaxial layer. The semiconductor chamber 200 may include an upper hearth assembly 210 for sealing an upper end opening of the quartz tube 230, a quartz tube 230, and a lower hearth assembly 220 for sealing a lower end opening of the quartz tube 230, while the lower hearth assembly 220 may also be used to support the quartz tube 230.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A cooling apparatus for a semiconductor chamber, for cooling the semiconductor chamber, the cooling apparatus comprising:
the semiconductor device comprises a shell (110), wherein the shell (110) encloses to form an accommodating space (111) and an exhaust port (112) communicated with the accommodating space (111), and a semiconductor chamber (200) is positioned in the accommodating space (111);
a heat exchanger (120), wherein the heat exchanger (120) is positioned in the accommodating space (111), and the heat exchanger (120) is used for exchanging heat for the gas in the accommodating space (111);
a gas driving mechanism (130), wherein the gas driving mechanism (130) is positioned in the accommodating space (111), and the gas driving mechanism (130) is used for driving the gas in the accommodating space (111) to be discharged from the gas outlet (112).
2. The cooling arrangement according to claim 1, wherein the heat exchanger (120) is arranged close to the top of the housing (110) and the exhaust opening (112) opens at the bottom of the housing (110).
3. The cooling device according to claim 2, wherein a vent (116) is opened at the top of the housing (110), an external environment is communicated with the accommodating space (111) through the vent (116), and cold air in the external environment enters the accommodating space (111) through the vent (116).
4. The cooling device according to claim 2, wherein the gas driving mechanism (130) is disposed on the heat exchanger (120) and is communicated with the gas outlet (122) of the heat exchanger (120).
5. The cooling arrangement according to claim 1, wherein the heat exchanger (120) has a gas inlet (121) and a gas outlet (122), the gas inlet (121) being arranged towards the semiconductor chamber (200), an axis of the gas inlet (121) intersecting an axis of the gas outlet (122), and the gas outlet (122) being arranged towards the gas outlet (112).
6. The cooling device according to any one of claims 1 to 5, wherein the number of the heat exchangers (120) is plural, and the plural heat exchangers (120) are distributed at intervals along the circumferential direction of the housing (110); the number of the gas driving mechanisms (130) is multiple, the gas driving mechanisms (130) are distributed at intervals along the circumferential direction of the shell (110), and the heat exchangers (120) and the gas driving mechanisms (130) are arranged in a one-to-one correspondence mode.
7. The cooling device according to claim 1, wherein the housing (110) is opened with a through hole provided with a viewing window assembly (140), the viewing window assembly (140) being used to observe an operation state of the semiconductor chamber (200) located in the accommodating space (111).
8. The cooling device according to claim 1, wherein the housing (110) comprises a top plate (113) and a cylinder (114), the cylinder (114) comprises at least two arc-shaped plates, the at least two arc-shaped plates are spliced, the top plate (113) covers the top of the cylinder (114), the top plate (113) is provided with a mounting hole, and a part of the semiconductor chamber (200) is located in the mounting hole.
9. A cooling arrangement according to claim 1, wherein the gas driving means (130) is an axial fan.
10. A semiconductor processing apparatus comprising a semiconductor chamber (200) and the cooling device of any one of claims 1 to 9, the semiconductor chamber (200) being located within the accommodation space (111).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111591828.5A CN114318522A (en) | 2021-12-23 | 2021-12-23 | Cooling device of semiconductor cavity and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111591828.5A CN114318522A (en) | 2021-12-23 | 2021-12-23 | Cooling device of semiconductor cavity and semiconductor process equipment |
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| Publication Number | Publication Date |
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| CN114318522A true CN114318522A (en) | 2022-04-12 |
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| CN202111591828.5A Pending CN114318522A (en) | 2021-12-23 | 2021-12-23 | Cooling device of semiconductor cavity and semiconductor process equipment |
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| US20190301018A1 (en) * | 2018-03-29 | 2019-10-03 | Asm International N.V. | Wafer boat cooldown device |
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| WO2021243993A1 (en) * | 2020-06-05 | 2021-12-09 | 隆基绿能科技股份有限公司 | Heat exchange device and single crystal furnace |
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2021
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6334311B1 (en) * | 1999-03-05 | 2002-01-01 | Samsung Electronics Co., Ltd. | Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility |
| US6370897B1 (en) * | 1999-07-02 | 2002-04-16 | Tokyo Electron Limited | Semiconductor manufacturing facility |
| US6427462B1 (en) * | 1999-07-02 | 2002-08-06 | Tokyo Electron Limited | Semiconductor manufacturing facility, semiconductor manufacturing apparatus and semiconductor manufacturing method |
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| US20190180983A1 (en) * | 2016-08-02 | 2019-06-13 | Beijing Naura Microelectronics Equipment Co., Ltd | Plasma source and semiconductor processing apparatus |
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