CN114310495A - Sapphire optical element processing method based on lower-swinging machine - Google Patents
Sapphire optical element processing method based on lower-swinging machine Download PDFInfo
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Abstract
The invention provides a sapphire optical element processing method based on a lower swinging machine, which comprises the following steps: carrying out disc grinding on the first large surface of the sapphire blank to obtain a ground surface; with the frosted surface as a reference surface, sequentially milling, grinding and polishing the second large surface of the sapphire blank into a disc to obtain a third polished surface; taking the third polished surface as a reference surface, and carrying out dishing polishing on the frosted surface of the sapphire blank to obtain a fifth polished surface; wherein the lapping is done on a downswing machine. The method ensures the processing precision of the sapphire optical element; because the polishing procedure adopts the disc processing mode, the production efficiency of processing the sapphire optical element on the lower pendulum machine can be effectively improved.
Description
Technical Field
The invention relates to the technical field of optical element processing, in particular to a sapphire optical element processing method based on a lower-swinging machine.
Background
Sapphire belongs to a trigonal system and has a hexagonal structure and a lattice constant of: a, b, c, 12.991 a. Sapphire has hardness second to diamond, and has good optical, thermal and dielectric properties, and excellent mechanical properties, as well as excellent chemical stability, thermal stability and radiation resistance. Therefore, sapphire is widely used as a multifunctional crystal material with excellent comprehensive performance in precision instruments, laser windows, reflectors, semiconductor epitaxial substrate materials, integrated chips and the like.
With the development of high-precision photoelectric fields and devices, higher requirements are put on the precision of sapphire optical elements. However, when the existing or traditional processing technology is adopted to perform sapphire processing, the processing efficiency is low, the processing precision of sapphire is low, and the processed sapphire optical element cannot meet the application requirement of a precision infrared detection system.
Disclosure of Invention
The invention provides a sapphire optical element processing method based on a lower swinging machine, which is used for solving or improving the problems of low processing efficiency and low processing precision of the existing sapphire processing technology.
The invention provides a sapphire optical element processing method based on a lower swinging machine, which comprises the following steps:
carrying out disc grinding on the first large surface of the sapphire blank to obtain a ground surface;
with the frosted surface as a reference surface, sequentially milling, grinding and polishing the second large surface of the sapphire blank into a disc to obtain a third polished surface;
taking the third polished surface as a reference surface, and carrying out dishing polishing on the frosted surface of the sapphire blank to obtain a fifth polished surface; wherein the lapping is done on a downswing machine.
According to the sapphire optical element processing method based on the lower swinging machine, the step of dishing and frosting the first large surface of the sapphire blank comprises the following steps:
hanging a plurality of sapphire blanks on a tray forming die;
under the condition of assistance of the abrasive, a sanding die is adopted to perform sanding processing on the first large surfaces of the sapphire blanks, and sanding parameters of the sanding processing are controlled to reach a sanding set range;
detecting the frosted surface shape;
the sanding parameters comprise center thickness, center thickness error and surface roughness and edge thickness difference of sanding surfaces.
According to the sapphire optical element processing method based on the pendulum machine, provided by the invention, under the condition of being assisted by abrasive materials, the step of carrying out sanding processing on the first large surfaces of a plurality of sapphire blanks by using a sanding die comprises the following steps:
carrying out at least three times of sanding processing on the first large surface of the sapphire blank;
in the first grinding processing, the grinding material is boron carbide with the granularity of W40, and the grinding thickness is 0.1-0.15 mm;
in the second grinding processing, the grinding material is boron carbide with the granularity of W20, and the grinding thickness is 0.03-0.05 mm;
in the third grinding processing, the grinding material is boron carbide with the granularity of W10, and the grinding thickness is 0.02-0.04 mm.
According to the sapphire optical element processing method based on the lower swinging machine, the step of milling and grinding the second large surface of the sapphire blank comprises the following steps:
milling and grinding the second large surface of the sapphire blank at least once by adopting a single milling and grinding mode to obtain a milled and ground surface, and controlling milling and grinding parameters of milling and grinding to reach a milling and grinding set range;
detecting the milled surface shape;
the milling parameters comprise the center thickness, the center thickness error and the surface roughness and the edge thickness difference of a milling surface.
According to the sapphire optical element processing method based on the lower swinging machine provided by the invention, the step of finely grinding the second large surface of the sapphire blank comprises the following steps:
carrying out at least two times of fine grinding on the milled and ground surface obtained by milling in a single piece fine grinding or disc fine grinding mode to obtain a fine ground surface, and controlling the fine grinding parameters of the fine grinding processing to reach a fine grinding set range;
detecting the surface shape processed by fine grinding;
wherein, the milling and grinding scale is larger than the fine grinding scale, and the fine grinding scale is reduced in sequence according to the fine grinding processing sequence; the accurate grinding parameters comprise the center thickness, the center thickness error and the surface roughness and the edge thickness difference of the accurate grinding surface.
According to the sapphire optical element processing method based on the lower swinging machine, the step of carrying out disc polishing on the second large surface of the sapphire blank comprises the following steps:
hanging a plurality of sapphire blanks on a tray forming die;
under the condition of assistance of the first polishing solution, polishing the fine grinding surface obtained by fine grinding for at least three times by using a polishing mould covered with a first polishing layer;
the first polishing solution is a mixed solution containing white corundum; the first polishing layer comprises: a polyurethane layer.
According to the sapphire optical element processing method based on the lower swinging machine provided by the invention, the step of carrying out disc polishing on the second large surface of the sapphire blank further comprises the following steps:
the first polishing step, white corundum with the granularity of 3.0 mu m and the concentration of 1.05g/cm is selected3The first polishing solution removes the sand holes on the finish ground surface in the polishing process, and controls the polishing parameters of the first polishing to reach a first polishing set range to obtain a first polished surface; detecting the surface shape and surface defects of the first polished surface;
a second polishing step, white corundum with the granularity of 0.5 mu m and the concentration of 1.05g/cm is selected3The first polishing solution corrects the surface shape of the first polishing surface in the polishing process, and controls the polishing parameters of the second polishing to reach a second polishing set range to obtain a second polishing surface; detecting the surface shape and surface defects of the second polished surface;
the third polishing step, white corundum with the granularity of 0.5 mu m and the concentration of 1.03g/cm is selected3The first polishing liquid of (1), in polishingCorrecting the smoothness of the second polished surface in the machining process, and controlling the polishing parameter of the third polishing to reach a third polishing set range to obtain a third polished surface; detecting the surface shape and surface defects of the third polished surface;
wherein, the polishing parameters for polishing the second large surface comprise the central thickness, the diaphragm number, the local error and the surface defect of the polished surface obtained by polishing.
According to the sapphire optical element processing method based on the lower swinging machine, provided by the invention, the first polishing solution comprises: 8000-12000 parts of water, 350-450 parts of white corundum and 100-200 parts of silica sol.
According to the sapphire optical element processing method based on the lower pendulum machine, the step of carrying out dishing polishing on the frosted surface of the sapphire blank comprises the following steps:
hanging a plurality of sapphire blanks on a tray forming die;
under the condition of assistance of second polishing liquid, performing disk polishing on the frosted surface at least twice by using a polishing mould covered with a second polishing layer;
wherein the second polishing solution is a mixed solution containing white corundum; the second polishing layer comprises: a polyurethane layer or an asphalt layer.
According to the sapphire optical element processing method based on the lower pendulum machine, the step of carrying out dishing polishing treatment on the frosted surface of the sapphire blank further comprises the following steps:
a rough polishing step, white corundum with the granularity of 0.8 mu m and the concentration of 1.05g/cm is selected3The second polishing solution is used for polishing the frosted surface in a disc mode by adopting a polishing mould covered with a polyurethane layer, and the polishing parameters of rough polishing are controlled to reach a fourth polishing set range to obtain a fourth polished surface; detecting the surface shape and surface defects of the fourth polished surface;
fine polishing, white corundum with granularity of 0.5 micron and concentration of 1.03g/cm3The second polishing solution adopts a polishing mould or an asphalt rubber plate covered with an asphalt layer to repair the fourth polishing surfaceControlling the polishing parameters of the finish polishing to reach a fifth polishing set range to obtain a fifth polished surface; detecting the surface shape and surface defects of the fifth polished surface;
wherein, the polishing parameters for polishing the frosted surface comprise the f-number, the local error and the surface defect of the polished surface obtained by polishing.
According to the sapphire optical element processing method based on the lower pendulum machine, when the third polishing surface is processed, the frosted surface obtained by pre-processing is used as the reference surface, after the third polishing surface is processed on the lower pendulum machine, the frosted surface is polished on the lower pendulum machine by using the third polishing surface as the reference surface to obtain the fifth polishing surface, and the processing precision of the sapphire optical element is ensured in the whole processing procedure; because the grinding and polishing processes are both in the form of disc forming processing, particularly the polishing process is implemented on a lower swinging machine by disc forming processing, the processing efficiency of the sapphire optical element can be effectively improved.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart of a sapphire optical element processing method based on a pendulum machine provided by the invention;
FIG. 2 is a schematic cross-sectional structure diagram of a bonding mold for dishing up a sapphire blank according to the present invention;
fig. 3 is a cross-sectional view of a ZYGO interferometer of a sapphire optical component obtained by the sapphire optical element processing method based on the pendulum machine shown in fig. 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The method for processing a sapphire optical element based on a skirt machine according to the present invention is described below with reference to fig. 1-2.
As shown in fig. 1, the present embodiment provides a sapphire optical element processing method based on a pendulum machine, including the following steps:
110, performing disc grinding on the first large surface of the sapphire blank to obtain a ground surface;
and step 130, taking the third polished surface as a reference surface, and performing disc polishing on the frosted surface of the sapphire blank to obtain a fifth polished surface.
Specifically, in the present embodiment, when the third polished surface is processed, the frosted surface obtained by pre-processing is used as a reference surface, a special bonding mold is designed on the lower swing machine to complete the disc-forming polishing processing of the third polished surface, and the frosted surface is used as the reference surface to be disc-formed polished on the lower swing machine to obtain a fifth polished surface, so that the processing precision of the sapphire optical element is ensured in the whole processing procedure; the grinding and polishing processes are all in a disc forming processing mode, particularly the polishing process is implemented on a lower swinging machine in a disc forming processing mode, and the processing efficiency of the sapphire optical element can be effectively improved.
It should be noted that the sapphire optical element shown in the present embodiment is an optical component made of sapphire, and can be obtained by processing based on the sapphire blank shown in the above embodiments.
In the present embodiment, both the grinding and polishing steps involved in processing the sapphire optical element are in the form of disc processing. Here, the dishing process in this embodiment refers to sticking and dishing a plurality of sapphire blanks on a bonding die as shown in fig. 2 to fix the sapphire blanks, and then polishing the sapphire blanks by a polishing die on a lower swing machine. In the process of dishing, the spherical surface of the bonding die shown in fig. 2 faces downward and corresponds to a polishing die of a lower-swing machine arranged on the lower side, and the polishing die swings back and forth to polish the sapphire blank fixed on the upper bonding die.
Here, in the present embodiment, the purpose of sanding the first large surface of the sapphire blank is to sand the first large surface of the sapphire blank into a frosted surface, so that the second large surface of the sapphire blank is processed using the frosted surface as a reference surface, thereby obtaining a third polished surface. Accordingly, when the frosted surface is polished in a disc, a third polished surface obtained by processing the second large surface of the sapphire blank may be used as the reference surface.
The first large surface and the second large surface of the sapphire blank are two surfaces which are respectively arranged at the opposite end parts of the sapphire blank. The surface shapes of the third polishing surface and the fifth polishing surface shown in this embodiment may be both flat surfaces, or convex surfaces or concave surfaces with spherical shapes.
In the case that one of the third polished surface and the fifth polished surface is a plane, and the other is a plane or a spherical surface, the sapphire optical element processed in the embodiment may be a plano-convex lens, a plane window, a plano-concave lens, and the like, which is not limited herein.
In some embodiments, the step of pan sanding the first large face of the sapphire blank comprises: carrying out disc feeding on a plurality of sapphire blanks on a disc forming die of a flat grinding machine;
specifically, this embodiment chooses unipolar lens to grind and throw the machine, becomes a set dull polish to the first big face of sapphire blank. During the process of hanging the disc, the disc can be hung on the white wax, and according to the disc forming number and the size parameter of the sapphire optical element, for example, the size parameter of the sapphire optical element can be the diameter or the radius, the disc forming mold and the frosted grinding tool with corresponding specifications are selected. Among them, the frosted grinding tool is preferably a fine grinding die.
Further, when disc grinding is carried out, under the assistance of grinding materials, a flat grinding die is adopted to carry out grinding processing on the first large surfaces of the sapphire blanks, and grinding parameters are controlled to reach a grinding set range; and detecting the surface shape of the frosted surface by adopting a dial indicator under the matching of the measuring ring.
The sanding parameters shown in the embodiment include center thickness, center thickness error, and surface roughness and edge thickness difference of the sanded surface.
In actual detection, the center thickness error of the frosting can be controlled and controlled to reach 0.01mm, the f-number of the frosting surface reaches +/-0.5, and the edge thickness difference of the frosting surface is smaller than 0.005 mm.
Further, the first large surface of the sapphire blank can be selectively sanded at least three times by the embodiment so as to control the sanding parameters of the sanded surface.
In the first grinding processing, the grinding material is boron carbide with the granularity of W40, and the grinding thickness is 0.1-0.15 mm; in the second grinding processing, the grinding material is boron carbide with the granularity of W20, and the grinding thickness is 0.03-0.05 mm; in the third grinding processing, the grinding material is boron carbide with the granularity of W10, and the grinding thickness is 0.02-0.04 mm.
Wherein, dull polish thickness can be according to sapphire optical element's finished product size and sapphire blank's blank size setting, for example, dull polish thickness is less than 0.25mm, and the dull polish thickness that processes at the cubic dull polish reduces in proper order.
After the disc grinding is finished, each sapphire blank can be subjected to disc setting in a heating mode, and then, the sapphire blanks are cleaned for one time to remove dust attached to the sapphire blanks.
In some embodiments, the step of milling the second large surface of the sapphire blank includes:
and (3) milling and grinding the second large surface of the sapphire blank at least once by adopting a single milling and grinding mode, and controlling milling and grinding parameters of milling and grinding to reach a milling and grinding set range to obtain a milled and ground surface.
In order to ensure that the milling and grinding effect can reach the expected milling and grinding effect, the embodiment can adopt the dial indicator to detect the surface shape of the milled and ground surface in the process of milling and grinding under the cooperation of the measuring ring, so that the milling and grinding parameters of the milled and ground surface meet the set range of milling and grinding; the milling parameters comprise the center thickness of milling, the center thickness error, the surface roughness of a milling surface and the edge thickness difference.
In this embodiment, the error of the center thickness of the milling and grinding process can be specifically controlled to be 0.03mm, and the edge thickness difference of the milling and grinding surface is less than 0.03 mm; in the case that the milling surface is spherical, the present embodiment also controls the height loss accuracy of the milling surface to be-1 to-3 μm.
It should be noted here that the purpose of milling the second large face of the sapphire blank in this embodiment is to remove the center thickness of the sapphire blank on a large scale. Therefore, in the case where the surface of the third polished surface of the sapphire optical element is a plane, the second large surface of the sapphire blank may be milled by using a disk milling method, and in the case where the surface of the third polished surface is a spherical surface, in order to ensure the milling effect, the second large surfaces of the sapphire blanks may be milled one by one preferably by using a single milling method.
After finishing milling and grinding, the edges of the grinding surface and the milling and grinding surface of the sapphire blank can be respectively chamfered, and the size of the chamfer is controlled to be 0.6+0.1 mm.
In some embodiments, the step of lapping the second major face of the sapphire blank comprises:
and carrying out at least two times of fine grinding on the milled and ground surface obtained by milling by adopting a single piece fine grinding or disc fine grinding mode, and controlling the fine grinding parameters of the fine grinding processing to reach a fine grinding set range to obtain a fine ground surface.
In order to ensure that the accurate grinding achieves the expected accurate grinding effect, the embodiment can adopt a dial indicator to detect the surface shape of the accurate grinding processing under the matching of the measuring ring in the process of the accurate grinding processing.
Wherein the milling dimension shown in this embodiment is larger than the refining dimension, and the dimension of each refining decreases in turn in the order of refining. In the process of milling and grinding, the edge thickness difference of the finish grinding surface can be specifically controlled to be less than 0.06 mm.
In a preferred embodiment, the milling and grinding surface body is subjected to twice fine grinding, and the center thickness error of the fine grinding is controlled to be 0.01mm in both the first fine grinding and the second fine grinding. In the case of a spherical refining surface, the present embodiment also controls the loss of precision of the refining surface to 0 to-2 μm.
In the case that the surface of the third polishing surface of the sapphire optical element is a plane, the embodiment may adopt a disc-forming fine grinding manner to perform fine grinding on the milled surface of the second large surface of the sapphire blank so as to ensure the efficiency of the fine grinding; in the case where the surface shape of the third polished surface is a spherical surface, in order to ensure the finish grinding effect, the present embodiment preferably performs finish grinding on the milled surfaces of the second large surfaces of the plurality of sapphire blanks one by one in a single piece finish grinding manner.
In some embodiments, the step of dishing the second large face of the sapphire blank comprises:
carrying out plate feeding on a plurality of sapphire blanks on a plate forming die of a lower swing machine;
under the condition of assistance of the first polishing solution, polishing the fine grinding surface obtained by fine grinding for at least three times by using a polishing mould covered with a first polishing layer;
wherein the first polishing solution is a mixed solution containing water, silica sol and white corundum; the first polishing layer comprises: a polyurethane layer.
Here, the first polishing liquid shown in this embodiment includes: 8000-12000 parts of water, 350-450 parts of white corundum and 100-200 parts of silica sol.
In order to better improve the polishing effect of the polishing solution on the part, the polyurethane layer shown in the embodiment is preferably prepared by using polyurethane with model number LP 57.
In a preferred embodiment, in order to further ensure the precision of the disk polishing of the second large surface of the sapphire blank, the present embodiment performs the disk polishing process on the second large surface of the sapphire blank specifically three times as follows:
the first polishing step, white corundum with grain size of 3.0 μm is selectedAt a concentration of 1.05g/cm3The first polishing solution is polished by a polishing mold based on a lower swinging machine, sand holes on a finish ground surface are removed, the polishing parameters of the first polishing are controlled to reach a first polishing set range, for example, the size of the center thickness is controlled to be 0.005-0.01 mm, the f-number reaches-5- +0.5, the local error is less than 0.3fr, and the surface defect of the first polished surface is controlled to obtain the first polished surface. And after polishing the lower disc, detecting the surface shape by adopting a sample plate, and detecting surface defects by adopting an interferometer.
A second polishing step, white corundum with the granularity of 0.5 mu m and the concentration of 1.05g/cm is selected3The first polishing solution is used for polishing by adopting a polishing mould based on a lower swinging machine, the surface shape of the first polished surface is repaired, the polishing parameters of the second polishing are controlled to reach a second polishing set range, for example, the size of the center thickness is controlled to be 0.005-0.01 mm, the f-number reaches-5- +0.5, the local error reaches 0.3fr, and the surface defect of the second polished surface is controlled, so that the second polished surface is obtained; and after polishing the lower disc, detecting the surface shape by adopting a sample plate, and detecting surface defects by adopting an interferometer.
The third polishing step, white corundum with the granularity of 0.5 mu m and the concentration of 1.03g/cm is selected3The first polishing solution is polished on a lower swing machine by adopting a disc polishing mould, the smoothness of the second polishing surface is corrected, the polishing parameter of the third polishing surface is controlled to reach a third polishing set range, for example, the thickness of the center is controlled to be 0.005-0.01 mm, the diaphragm number is controlled to be-5- +0.5, the local error is controlled to be 0.3fr, and the grade of the surface defect of the second polishing surface is controlled to be 1 multiplied by 0.063, so that the third polishing surface is obtained. In the polishing process, a sample plate is adopted to detect the surface shape, and an interferometer is adopted to detect surface defects.
After the third polished surface is finished, the respective sapphire blanks may be subjected to the dishing and the cleaning in sequence, and then the polishing of the frosted surface as shown in the above embodiment is performed with the third polished surface as a reference, thereby finishing the processing of the fifth polished surface.
In some embodiments, the step of polishing the frosted surface of the sapphire blank by dishing shown in the present embodiment includes:
and (4) hanging a plurality of sapphire blanks on a tray forming die.
Specifically, before the upper disc operation is carried out, disc forming molds with corresponding specifications are selected according to the disc forming number and size parameters of the sapphire optical element; and then, gluing balls on the coiling mold, and then, carrying out disc pasting and coiling on the basis of a third polished surface of the sapphire blank.
And then, with the aid of a second polishing solution, performing dishing polishing on the frosted surface of the sapphire blank at least twice by using a polishing mold covered with a second polishing layer.
The second polishing solution shown in this embodiment is a mixed solution including water, silica sol, and white corundum, and 8000 to 12000 parts by weight of water, 350 to 450 parts by weight of white corundum, and 100 to 200 parts by weight of silica sol may also be used as the second polishing solution; the second polishing layer shown in this example comprises: a polyurethane layer or an asphalt layer.
Further, the step of performing the dishing polishing process on the frosted surface of the sapphire blank shown in this embodiment includes:
a rough polishing step, white corundum with the granularity of 0.8 mu m and the concentration of 1.05g/cm is selected3The polishing surface is polished in a disc mode through a polyurethane layer covered on the polishing mold, the polishing parameter of rough polishing is controlled to reach a fourth polishing set range, for example, the polishing parameter is that the f-number of the fourth polishing surface reaches +/-0.3, the local error is small by 0.3fr, and the surface defect of the fourth polishing surface is controlled to obtain a fourth polishing surface; during polishing, an interferometer is used to detect surface defects.
Fine polishing, white corundum with granularity of 0.5 micron and concentration of 1.03g/cm3The second polishing solution is subjected to disc polishing processing on a lower swing machine by using a polishing mold or an asphalt cement plate, wherein the second polishing layer on the polishing mold is an asphalt layer, and the frosted surface is preferably subjected to disc polishing through the asphalt cement plate. During the finish polishing, the polishing parameters of the finish polishing are controlled to reach a fifth polishing set range, for example, light is controlledThe number of turns reaches ± 0.3, the local error is small by 0.3fr, and the surface defect grade of the fifth polished surface reaches 1 × 0.063, to obtain a fifth polished surface. During polishing, an interferometer is used to detect surface defects.
And after the fifth polishing surface is processed, obtaining the sapphire optical element, and cleaning the lower disc of the sapphire optical element.
It should be noted here that, in the polishing of the frosted surface of the first large surface and the polished surface of the second large surface of the sapphire optical element, a mixed liquid containing diamond powder may be used as the first polishing liquid or the second polishing liquid.
Based on the embodiments described above, the present invention will be specifically described below by taking the processing of a sapphire optical element having a diameter of 13mm as an example.
Example 1
The sapphire optical element shown in this embodiment is a planar window, and the third polished surface and the fifth polished surface of the sapphire optical element are two parallel planes respectively. Here, the processing of the sapphire optical element may refer to the following steps:
Step 2, sanding and treading a plane: selecting a fine grinding mold as the grinding mold; in the first sanding process, boron carbide with the granularity of W40 is selected, and the thickness of the sanding process is 0.1 mm; in the second grinding processing, the grinding material is boron carbide with the granularity of W20, and the thickness of the grinding processing is 0.03 mm; in the third grinding processing, the grinding material is boron carbide with the granularity of W10, and the thickness of the grinding processing is 0.02 mm.
Through the three-time sanding, the center thickness of the sanding is controlled to be 2.98+0.01mm, the f-number is controlled, the f-number N reaches +/-0.5, and the edge thickness difference delta t of the sanding surface is less than 0.005 mm. And detecting the roughness of the frosted surface by adopting a dial indicator under the matching of the measuring ring.
And 4, cleaning the sapphire blank of the lower disc for the 1 st time.
And 5, selecting a mirror disc with corresponding specification according to the number and specification of the sapphire optical elements, fixing the frosted surface of the sapphire optical elements with the mirror disc, and finishing the disc feeding operation of the plurality of sapphire optical elements again.
And 6, milling the second large surface of the sapphire blank, removing the center thickness in a large size, controlling the edge thickness difference, controlling the milling center thickness to be 2.3+0.03mm, and strictly controlling the edge thickness difference delta t of the milled surface to be less than 0.03 mm.
And 7, chamfering the blank: chamfering two sides of the chamfering die: 0.6+0.1 mm.
And 8, carrying out primary disc forming and fine grinding: the small size removes the center thickness, and the fine grinding center thickness is controlled to be 2.155 +/-0.01 mm.
And 9, secondary disc forming fine grinding: the center thickness is removed in a finer size, the thickness of the fine grinding center is controlled to be 2.15 +/-0.01 mm, and the edge thickness difference delta t of the fine grinding surface is controlled to be less than 0.06mm, so that the edge thickness difference delta t of a single sapphire blank is smaller than or equal to 0.48 mm.
And step 10, performing bottom wall washing, and performing 2 nd-time washing on the sapphire blank of the bottom wall.
And 11, polishing the fine grinding surface obtained by fine grinding for the first time in a disc polishing mode, controlling the central thickness of the first polishing surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5, and controlling the local error to be 0.3fr to obtain the first polishing surface.
In the first polishing process, the selected polishing solution is as follows: 8000 parts of water, 350 parts of white corundum and 100 parts of silica sol. Wherein, white corundum with the granularity of 3 mu m and a polishing mould covered with an LP57 polyurethane layer are selected for polishing.
And step 12, polishing the first polished surface for the second time to correct the surface shape of the first polished surface, controlling the central thickness of the second polished surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5 and controlling the local error to be 0.3fr, and thus obtaining the second polished surface.
In the second polishing process, the adopted polishing solution is as follows: 8000 parts of water, 350 parts of white corundum and 100 parts of silica sol. Wherein, the white corundum with the granularity of 0.5 μm and the polishing mould covered with the LP57 polyurethane layer are selected for polishing.
And step 13, carrying out third polishing on the second polished surface to correct the smoothness of the second polished surface, controlling the central thickness of the third polished surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5, controlling the local error to be 0.3fr, controlling the grade of surface defects to be 1 x 0.063, and obtaining the P4 polished grade to obtain the third polished surface.
In the third polishing process, the adopted polishing solution is as follows: 8000 parts of water, 350 parts of white corundum and 100 parts of silica sol. Wherein, the white corundum with the granularity of 0.5 μm and the polishing mould covered with the LP57 polyurethane layer are selected for polishing.
And step 14, after the surface shape and the smoothness of the third polished surface are obtained, carrying out rubber ball hanging plate, and carrying out dish polishing on the frosted surface.
And step 15, selecting a mirror plate with a corresponding specification according to the number and the specification of the sapphire optical elements, gluing balls on the mirror plate, and fixing the third polishing surface of the sapphire optical element and the mirror plate to realize the plate feeding operation.
And step 16, roughly polishing to obtain a surface shape, roughly polishing the frosted surface by adopting a disk polishing mode, controlling the f-number of the fourth polished surface to be +/-0.3, and controlling the local error to be 0.3fr to obtain the fourth polished surface.
In the polishing process, the selected polishing solution is as follows: 8000 parts of water, 350 parts of white corundum and 100 parts of silica sol. Wherein, the white corundum with the granularity of 0.8 μm and the polishing mould covered with the LP57 polyurethane layer are selected for rough polishing.
Step 17, fine polishing to obtain a smooth finish; repairing the fourth polishing surface by a disk polishing mode, controlling the f-number of the fifth polishing surface to be +/-0.3, controlling the local error to be 0.3fr, and controlling the finish grade to be 1 multiplied by 0.063 to obtain the fifth polishing surface.
In the fine polishing process, the selected polishing solution is as follows: 8000 parts of water, 350 parts of white corundum and 100 parts of silica sol. Wherein the white corundum with the granularity of 0.5 mu m and the asphalt slab rubber are selected for polishing.
Example 2
The sapphire optical element shown in this embodiment is a plano-convex lens, the third polished surface of the sapphire optical element is a spherical convex surface, and the fifth polished surface is a plane. Here, the processing of the sapphire optical element may refer to the following steps:
Step 2, sanding and treading a plane: the bonding die is a fine grinding die; in the first sanding process, boron carbide with the granularity of W40 is selected, and the thickness of the sanding process is 0.15 mm; in the second grinding processing, the grinding material is boron carbide with the granularity of W20, and the thickness of the grinding processing is 0.05 mm; in the third grinding processing, the grinding material is boron carbide with the granularity of W10, and the thickness of the grinding processing is 0.04 mm.
Through the three-time sanding, the center thickness of the sanding is controlled to be 2.98+0.01mm, the f-number N reaches +/-0.5, and the edge thickness difference delta t of the sanding surface is less than 0.005 mm. And detecting the roughness of the frosted surface by adopting a dial indicator under the matching of the measuring ring.
And 4, cleaning the sapphire blank of the lower disc for the 1 st time.
And 5, milling the second large surface of the sapphire blank in a single milling mode, removing the center thickness in a large size, and controlling the edge thickness difference.
Wherein, the spherical radius of milling is + SR27, milling center thickness: 2.3+0.03mm, strictly controlling the edge thickness difference delta t of the milled surface to be less than 0.03mm, controlling the height loss precision to be-1 to-3 mu m, and measuring the surface shape of the milled surface by matching a phi 10 measuring ring with a dial indicator.
And 7, chamfering the blank: chamfering two sides of the chamfering die: 0.6+0.1 mm.
And 8, carrying out primary fine grinding in a single-piece fine grinding mode: removing the central thickness in a small size; the radius of the spherical surface for controlling the fine grinding is + SR27mm, and the specification of the fine grinding die is as follows: -SR24.5 × Φ 26.1mm, 2; the standard die has the following specifications: SR 27X phi 53.5mm, 1 pair, the reference die is used for correcting the fine grinding die; fine grinding jacket: 2 x phi 13mm, 8; thickness of the fine grinding center: 2.155 plus or minus 0.01 mm; the precision of the precision grinding surface is controlled to be 0 to-2 mu m.
And 9, performing secondary fine grinding in a single-piece fine grinding mode: finer dimensions remove center thickness; the radius of the spherical surface for controlling the fine grinding is + SR27mm, and the fine grinding mold: -SR24.5 × Φ 26.1mm, 2; fine grinding jacket: 2 x phi 13mm, 8; thickness of the fine grinding center: 2.15 mm plus or minus 0.01 mm; the height loss precision of the finish grinding surface is controlled to be 0 to-2 mu m, and the edge thickness difference delta t of the finish grinding surface is controlled to be less than 0.06mm, so that the edge thickness difference delta t of the single sapphire blank is less than or equal to 0.48 mm.
And step 10, performing bottom wall washing, and performing 2 nd-time washing on the sapphire blank of the bottom wall.
And 11, polishing the fine grinding surface obtained by fine grinding for the first time in a disc polishing mode, controlling the central thickness of the first polishing surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5, and controlling the local error to be 0.3fr to obtain the first polishing surface. In the first polishing process, the selected first polishing solution is: 12000 parts by weight of water, 450 parts by weight of white corundum and 200 parts by weight of silica sol. Wherein, the white corundum with the granularity of 3 μm and the bonding mould covered with the LP57 polyurethane layer are selected for polishing.
In the first polishing process, a high polishing base die is adopted: -SR26.7 × Φ 51mm, 2; adopting a finished disc correction die: + SR29.5 × Φ 52.5mm, 1; 3 disk forming jackets + SR29 x phi 37 x 12.7mm/4 holes are adopted; and (3) adopting a sample plate with the specification of-SR 27.029 multiplied by phi 25mm to carry out surface shape detection, and adopting an interferometer to detect surface defects.
Here, if the finish grinding surface obtained by the finish grinding is roughly ground by adopting a single-piece polishing mode to obtain a first polishing surface, the specification of the single-piece correcting die is selected as follows: + SR29.5 × Φ 28.2mm, 1; selecting a monomer jacket: + SR30 × Φ 13 × 2mm, 12.
And step 12, polishing the first polished surface for the second time to correct the surface shape of the first polished surface, controlling the central thickness of the second polished surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5 and controlling the local error to be 0.3fr, and thus obtaining the second polished surface. In the second polishing process, the adopted first polishing solution is as follows: 12000 parts by weight of water, 450 parts by weight of white corundum and 200 parts by weight of silica sol. Wherein, the white corundum with the granularity of 0.5 μm and the polishing mould covered with the LP57 polyurethane layer are selected for polishing.
In the process of secondary polishing, a high-polishing base die is adopted: -SR26.7 × Φ 51mm, 2; a high-throwing jacket is adopted: + phi 13 × 2mm, 8; and (3) adopting a sample plate with the specification of-SR 27.029 multiplied by phi 25mm to carry out surface shape detection, and adopting an interferometer to detect surface defects.
And step 13, carrying out third polishing on the second polished surface, controlling the central thickness of the third polished surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5, controlling the local error to be 0.3fr, controlling the grade of surface defects to be 1 multiplied by 0.063, and controlling the polishing grade of P4 to correct the smoothness of the second polished surface to obtain the third polished surface.
In the third polishing process, the adopted polishing solution is as follows: 12000 parts by weight of water, 450 parts by weight of white corundum and 200 parts by weight of silica sol. Wherein, the white corundum with the granularity of 0.5 μm and the polishing mould covered with the LP57 polyurethane layer are selected for polishing.
In the third polishing process, a high polishing base die is selected: -SR26.7 × Φ 51mm, 2; a high-throwing jacket is adopted: + Φ 13 × 2mm, 8. And (3) adopting a sample plate with the specification of-SR 27.029 multiplied by phi 25mm to carry out surface shape detection, and adopting an interferometer to detect surface defects.
And step 14, after the surface shape and the smoothness of the third polished surface are obtained, carrying out rubber ball hanging plate, and carrying out dish polishing on the frosted surface.
And step 15, selecting a mirror plate with a corresponding specification according to the number and the specification of the sapphire optical elements, gluing balls on the mirror plate, and fixing the third polishing surface of the sapphire optical element and the mirror plate to realize the plate feeding operation.
And step 16, roughly polishing to obtain a surface shape, roughly polishing the frosted surface by adopting a disk polishing mode, controlling the f-number of the fourth polished surface to be +/-0.3, and controlling the local error to be 0.3fr to obtain the fourth polished surface.
In the course of rough polishing, the selected polishing solution is: 12000 parts by weight of water, 450 parts by weight of white corundum and 200 parts by weight of silica sol. Wherein, the white corundum with the granularity of 0.8 μm and the polishing mould covered with the LP57 polyurethane layer are selected for rough polishing.
Step 17, fine polishing to obtain a smooth finish; repairing the fourth polishing surface by a disk polishing mode, controlling the f-number of the fifth polishing surface to be +/-0.3, controlling the local error to be 0.3fr, and controlling the finish grade to be 1 multiplied by 0.063 to obtain the fifth polishing surface.
In the fine polishing process, the selected polishing solution is as follows: 12000 parts by weight of water, 450 parts by weight of white corundum and 200 parts by weight of silica sol. Wherein the white corundum with the granularity of 0.5 mu m and the asphalt slab rubber are selected for polishing.
Example 3
The sapphire optical element shown in this embodiment is a plano-concave lens, the third polished surface of the sapphire optical element is a spherical concave surface, and the fifth polished surface is a flat surface. Here, the processing of the sapphire optical element may refer to the following steps:
Step 2, sanding and treading a plane: the bonding die is a fine grinding die; in the first sanding process, boron carbide with the granularity of W40 is selected, and the thickness of the sanding process is 0.12 mm; in the second grinding processing, the grinding material is boron carbide with the granularity of W20, and the thickness of the grinding processing is 0.04 mm; in the third grinding processing, the grinding material is boron carbide with the granularity of W10, and the thickness of the grinding processing is 0.03 mm.
And through the three-time sanding, the f-number is controlled to enable the f-number N to reach +/-0.5, the edge thickness difference delta t of the sanded surface is less than 0.005mm, and the center thickness of the sanded surface is 2.98+0.01 mm. And detecting the roughness of the frosted surface by adopting a dial indicator under the matching of the measuring ring.
And 4, cleaning the sapphire blank of the lower disc for the 1 st time.
And 5, milling the second large surface of the sapphire blank in a single milling mode, removing the center thickness in a large size, and controlling the edge thickness difference.
Wherein, the spherical radius of milling is-SR 27, the milling center thickness: 2.3+0.03mm, strictly controlling the edge thickness difference delta t of the milled surface to be less than 0.03mm, controlling the height loss precision to be-1 to-3 mu m, and measuring the surface shape of the milled surface by matching a phi 10 measuring ring with a dial indicator.
And 7, chamfering the blank: chamfering two sides of the chamfering die: 0.6+0.1 mm.
And 8, carrying out primary fine grinding in a single-piece fine grinding mode: removing the central thickness in a small size; the radius of the spherical surface for controlling the fine grinding is-SR 27mm, and the specification of the fine grinding die is as follows: + SR24.5 × Φ 26.1mm, 2; the standard die has the following specifications: SR 27X phi 53.5mm, 1 pair, the reference die is used for correcting the fine grinding die; fine grinding jacket: 2 x phi 13mm, 8; thickness of the fine grinding center: 2.155 plus or minus 0.01 mm; the precision of the precision grinding surface is controlled to be 0 to-2 mu m.
And 9, performing secondary fine grinding in a single-piece fine grinding mode: finer dimensions remove center thickness; the radius of the spherical surface for controlling the fine grinding is-SR 27mm, and the fine grinding mold: + SR24.5 × Φ 26.1mm, 2; fine grinding jacket: 2 x phi 13mm, 8; thickness of the fine grinding center: 2.15 mm plus or minus 0.01 mm; the height loss precision of the finish grinding surface is controlled to be 0 to-2 mu m, and the edge thickness difference delta t of the finish grinding surface is controlled to be less than 0.06mm, so that the edge thickness difference delta t of the single sapphire blank is less than or equal to 0.48 mm.
And step 10, performing bottom wall washing, and performing 2 nd-time washing on the sapphire blank of the bottom wall.
And 11, polishing the fine grinding surface obtained by fine grinding for the first time in a disc polishing mode to obtain a first polishing surface. In the first polishing process, the selected polishing solution is as follows: 10000 parts of water, 400 parts of white corundum and 150 parts of silica sol. Wherein, the white corundum with the granularity of 3 μm and the bonding mould covered with the LP57 polyurethane layer are selected for polishing.
In the first polishing process, the central thickness of the first polishing surface is controlled to be 0.005-0.01 mm, the f-number reaches-5- +0.5, the local error reaches 0.3fr, and a high polishing base die is adopted: + SR26.7 × Φ 51mm, 2; adopting a finished disc correction die: -SR29.5 × Φ 52.5mm, 1; adopting a disc forming jacket: SR 29X phi 37X 12.7mm, 4 holes, 3; and (3) adopting a sample plate with the specification of + SR27.029 multiplied by phi 25mm to carry out surface shape detection, and adopting an interferometer to detect surface defects.
Here, if the finish grinding surface obtained by the finish grinding is roughly ground by adopting a single-piece polishing mode to obtain a first polishing surface, the specification of the single-piece correcting die is selected as follows: -SR29.5 × Φ 28.2mm, 1; selecting a monomer jacket: SR30 × Φ 13 × 2mm, 12.
And step 12, polishing the first polished surface for the second time to correct the surface shape of the first polished surface, controlling the central thickness of the second polished surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5 and controlling the local error to be 0.3fr, and thus obtaining the second polished surface. In the second polishing process, the adopted polishing solution is as follows: 10000 parts of water, 400 parts of white corundum and 150 parts of silica sol. Wherein, the white corundum with the granularity of 0.5 μm and the polishing mould covered with the LP57 polyurethane layer are selected for polishing.
In the process of secondary polishing, a high-polishing base die is adopted: + SR26.7 × Φ 51mm, 2; a high-throwing jacket is adopted: phi 13 multiplied by 2mm, 8; and (3) adopting a sample plate with the specification of + SR27.029 multiplied by phi 25mm to carry out surface shape detection, and adopting an interferometer to detect surface defects.
And step 13, carrying out third polishing on the second polished surface to correct the smoothness of the second polished surface, controlling the central thickness of the third polished surface to be 0.005-0.01 mm, controlling the f-number to be-5- +0.5, controlling the local error to be 0.3fr, controlling the grade of surface defects to be 1 x 0.063, and obtaining the P4 polished grade to obtain the third polished surface. In the third polishing process, the adopted polishing solution is as follows: 12000 parts by weight of water, 450 parts by weight of white corundum and 200 parts by weight of silica sol. Wherein, the white corundum with the granularity of 0.5 μm and the polishing mould covered with the LP57 polyurethane layer are selected for polishing.
In the third polishing process, a high polishing base die is selected: + SR26.7 × Φ 51mm, 2; high throwing jacket: phi 13X 2mm, 8. And (3) adopting a sample plate with the specification of + SR27.029 multiplied by phi 25mm to carry out surface shape detection, and adopting an interferometer to detect surface defects.
And step 14, after the surface shape and the smoothness of the third polished surface are obtained, carrying out rubber ball hanging plate, and carrying out dish polishing on the frosted surface.
And step 15, selecting a mirror plate with a corresponding specification according to the number and the specification of the sapphire optical elements, gluing balls on the mirror plate, and fixing the third polishing surface of the sapphire optical element and the mirror plate to realize the plate feeding operation.
And step 16, roughly polishing to obtain a surface shape, roughly polishing the frosted surface by adopting a disk polishing mode, controlling the f-number of the fourth polished surface to be +/-0.3, and controlling the local error to be 0.3fr to obtain the fourth polished surface.
In the course of rough polishing, the selected polishing solution is: 10000 parts of water, 400 parts of white corundum and 150 parts of silica sol. Wherein, the white corundum with the granularity of 0.8 μm and the polishing mould covered with the LP57 polyurethane layer are selected for rough polishing.
Step 17, fine polishing to obtain a smooth finish; repairing the fourth polishing surface by a disk polishing mode, controlling the f-number of the fifth polishing surface to be +/-0.3, controlling the local error to be 0.3fr, and controlling the finish grade to be 1 multiplied by 0.063 to obtain the fifth polishing surface.
In the fine polishing process, the selected polishing solution is as follows: 10000 parts of water, 400 parts of white corundum and 150 parts of silica sol. Wherein the white corundum with the granularity of 0.5 mu m and the asphalt slab rubber are selected for polishing.
Preferably, the present embodiment further provides a sapphire optical element, and the sapphire optical element is prepared by using the sapphire optical element processing method based on a pendulum machine as described in any one of the above.
Based on the processing steps shown in the above embodiments, the surface shape accuracy parameters of the third polished surface and the fifth polished surface of the sapphire optical element can be obtained to PV equal to 0.273fr and rms equal to 0.023 λ, see fig. 3.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A sapphire optical element processing method based on a lower-swinging machine is characterized by comprising the following steps: carrying out disc grinding on the first large surface of the sapphire blank to obtain a ground surface;
with the frosted surface as a reference surface, sequentially milling, grinding and polishing the second large surface of the sapphire blank into a disc to obtain a third polished surface;
taking the third polished surface as a reference surface, and carrying out dishing polishing on the frosted surface of the sapphire blank to obtain a fifth polished surface;
wherein the lapping is done on a downswing machine.
2. The method of claim 1, wherein the step of pan sanding the first major surface of the sapphire blank comprises: hanging a plurality of sapphire blanks on a tray forming die;
under the condition of assistance of the abrasive, a sanding die is adopted to perform sanding processing on the first large surfaces of the sapphire blanks, and sanding parameters of the sanding processing are controlled to reach a sanding set range;
detecting the frosted surface shape;
the sanding parameters comprise center thickness, center thickness error and surface roughness and edge thickness difference of sanding surfaces.
3. The method of claim 2, wherein the step of sanding the first large surface of the plurality of sapphire blanks with a sanding die with abrasive assistance comprises:
carrying out at least three times of sanding processing on the first large surface of the sapphire blank;
in the first grinding processing, the grinding material is boron carbide with the granularity of W40, and the grinding thickness is 0.1-0.15 mm;
in the second grinding processing, the grinding material is boron carbide with the granularity of W20, and the grinding thickness is 0.03-0.05 mm;
in the third grinding processing, the grinding material is boron carbide with the granularity of W10, and the grinding thickness is 0.02-0.04 mm.
4. The method for machining a sapphire optical element based on a pendulous machine according to claim 1, wherein the step of milling the second large surface of the sapphire blank comprises the following steps: milling and grinding the second large surface of the sapphire blank at least once by adopting a single milling and grinding mode to obtain a milled and ground surface, and controlling milling and grinding parameters of milling and grinding to reach a milling and grinding set range;
detecting the milled surface shape;
the milling parameters comprise the center thickness, the center thickness error and the surface roughness and the edge thickness difference of a milling surface.
5. The method of claim 1, wherein the step of lapping the second major surface of the sapphire blank comprises: carrying out at least two times of fine grinding on the milled and ground surface obtained by milling in a single piece fine grinding or disc fine grinding mode to obtain a fine ground surface, and controlling the fine grinding parameters of the fine grinding processing to reach a fine grinding set range;
detecting the surface shape processed by fine grinding;
wherein, the milling and grinding scale is larger than the fine grinding scale, and the fine grinding scale is reduced in sequence according to the fine grinding processing sequence; the accurate grinding parameters comprise the center thickness, the center thickness error and the surface roughness and the edge thickness difference of the accurate grinding surface.
6. The method for processing the sapphire optical element based on the pendulous machine according to any one of claims 1 to 5, wherein the step of polishing the second large surface of the sapphire blank by dishing comprises:
hanging a plurality of sapphire blanks on a tray forming die;
under the condition of assistance of the first polishing solution, polishing the fine grinding surface obtained by fine grinding for at least three times by using a polishing mould covered with a first polishing layer;
the first polishing solution is a mixed solution containing white corundum; the first polishing layer includes a polyurethane layer.
7. The method of claim 6, wherein the step of polishing the second large surface of the sapphire blank by dishing further comprises:
the first polishing step, white corundum with the granularity of 3.0 mu m and the concentration of 1.05g/cm is selected3The first polishing solution removes the sand holes on the finish ground surface in the polishing process, and controls the polishing parameters of the first polishing to reach a first polishing set range to obtain a first polished surface;
detecting the surface shape and surface defects of the first polished surface;
a second polishing step, white corundum with the granularity of 0.5 mu m and the concentration of 1.05g/cm is selected3First polishing ofThe liquid corrects the surface shape of the first polishing surface in the polishing process, and controls the polishing parameters of the second polishing to reach a second polishing set range to obtain a second polishing surface;
detecting the surface shape and surface defects of the second polished surface;
the third polishing step, white corundum with the granularity of 0.5 mu m and the concentration of 1.03g/cm is selected3The first polishing solution corrects the smoothness of the second polished surface in the polishing process, and controls the polishing parameter of the third polishing to reach a third polishing set range to obtain a third polished surface;
detecting the surface shape and surface defects of the third polished surface;
wherein, the polishing parameters for polishing the second large surface comprise the central thickness, the diaphragm number, the local error and the surface defect of the polished surface obtained by polishing.
8. The sapphire optical element processing method based on a skirt machine according to claim 6, wherein the first polishing solution comprises: 8000-12000 parts of water, 350-450 parts of white corundum and 100-200 parts of silica sol.
9. The method for processing a sapphire optical element based on a skirt machine according to any one of claims 1 to 5, wherein the step of polishing the frosted surface of the sapphire blank by dishing comprises:
hanging a plurality of sapphire blanks on a tray forming die;
under the condition of assistance of second polishing liquid, performing disk polishing on the frosted surface at least twice by using a polishing mould covered with a second polishing layer;
wherein the second polishing solution is a mixed solution containing white corundum; the second polishing layer comprises: a polyurethane layer or an asphalt layer.
10. The method of claim 9, wherein the step of performing a dishing polishing process on the frosted surface of the sapphire blank further comprises:
a rough polishing step, white corundum with the granularity of 0.8 mu m and the concentration of 1.05g/cm is selected3The second polishing solution is used for polishing the frosted surface in a disc mode by adopting a polishing mould covered with a polyurethane layer, and the polishing parameters of rough polishing are controlled to reach a fourth polishing set range to obtain a fourth polished surface;
detecting the surface shape and surface defects of the fourth polished surface;
fine polishing, white corundum with granularity of 0.5 micron and concentration of 1.03g/cm3The fourth polishing surface is corrected by adopting a polishing mold or an asphalt rubber plate covered with an asphalt layer, and the polishing parameters of finish polishing are controlled to reach a fifth polishing set range to obtain a fifth polishing surface;
detecting the surface shape and surface defects of the fifth polished surface;
wherein, the polishing parameters for polishing the frosted surface comprise the f-number, the local error and the surface defect of the polished surface obtained by polishing.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118219069A (en) * | 2024-04-28 | 2024-06-21 | 北京创思工贸有限公司 | Processing method of monocrystalline silicon optical part |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09117853A (en) * | 1995-10-26 | 1997-05-06 | Dainippon Printing Co Ltd | Fine pattern partial grinding device |
| CN102490103A (en) * | 2011-12-16 | 2012-06-13 | 北京创思工贸有限公司 | Meniscus lens and processing method therefor |
| CN102729116A (en) * | 2012-06-20 | 2012-10-17 | 大连淡宁实业发展有限公司 | Machining process for batched machining in multi-surface polishing of sapphire single-crystal cuboid window |
| CN105834859A (en) * | 2016-04-13 | 2016-08-10 | 中国科学院光电技术研究所光学元件厂 | Cold-machining technology for high-precision optical lenses |
| TWI574298B (en) * | 2015-11-10 | 2017-03-11 | Crystalwise Tech Inc | Semiconductor wafer surface processing method |
| JP6844733B1 (en) * | 2020-05-21 | 2021-03-17 | 信越半導体株式会社 | Substrate wafer manufacturing method and substrate wafer |
-
2021
- 2021-12-31 CN CN202111665415.7A patent/CN114310495B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09117853A (en) * | 1995-10-26 | 1997-05-06 | Dainippon Printing Co Ltd | Fine pattern partial grinding device |
| CN102490103A (en) * | 2011-12-16 | 2012-06-13 | 北京创思工贸有限公司 | Meniscus lens and processing method therefor |
| CN102729116A (en) * | 2012-06-20 | 2012-10-17 | 大连淡宁实业发展有限公司 | Machining process for batched machining in multi-surface polishing of sapphire single-crystal cuboid window |
| TWI574298B (en) * | 2015-11-10 | 2017-03-11 | Crystalwise Tech Inc | Semiconductor wafer surface processing method |
| CN105834859A (en) * | 2016-04-13 | 2016-08-10 | 中国科学院光电技术研究所光学元件厂 | Cold-machining technology for high-precision optical lenses |
| JP6844733B1 (en) * | 2020-05-21 | 2021-03-17 | 信越半導体株式会社 | Substrate wafer manufacturing method and substrate wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118219069A (en) * | 2024-04-28 | 2024-06-21 | 北京创思工贸有限公司 | Processing method of monocrystalline silicon optical part |
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