CN114300386A - Reaction chamber tail gas pressure control device and semiconductor process equipment - Google Patents
Reaction chamber tail gas pressure control device and semiconductor process equipment Download PDFInfo
- Publication number
- CN114300386A CN114300386A CN202111553963.0A CN202111553963A CN114300386A CN 114300386 A CN114300386 A CN 114300386A CN 202111553963 A CN202111553963 A CN 202111553963A CN 114300386 A CN114300386 A CN 114300386A
- Authority
- CN
- China
- Prior art keywords
- pressure control
- pipe
- exhaust pipe
- reaction chamber
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title abstract description 59
- 230000008569 process Effects 0.000 title abstract description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 86
- 230000005494 condensation Effects 0.000 claims abstract description 46
- 238000009833 condensation Methods 0.000 claims abstract description 46
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 28
- 230000007704 transition Effects 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 6
- 238000011144 upstream manufacturing Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 60
- 239000001301 oxygen Substances 0.000 description 45
- 229910052760 oxygen Inorganic materials 0.000 description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 33
- 239000007788 liquid Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Landscapes
- Engine Equipment That Uses Special Cycles (AREA)
Abstract
The utility model provides a reaction chamber tail gas pressure control device and semiconductor process equipment, includes the first condensation subassembly, the transverse connection piece, first exhaust pipe, the automatic pressure control valve that connect gradually in reaction chamber's gas vent, second exhaust pipe and locate transverse connection piece's below, and with the water box of first exhaust pipe intercommunication, the automatic pressure control valve still is equipped with pressure detection pipe with transverse connection piece, still includes temperature control component and drain pipe, wherein: the temperature control assembly is used for maintaining the first exhaust pipe and the second exhaust pipe within a preset temperature range so as to stabilize the temperature of tail gas entering and exiting the automatic pressure control valve; the second exhaust pipe is connected with the water box through a drain pipe and is used for being connected with the plant exhaust pipe. According to the embodiment of the invention, the temperature of the tail gas entering and exiting the automatic pressure control valve is stabilized through the temperature control assembly, so that the problem that the volume of the tail gas inside the automatic pressure control valve is changed due to the temperature change of the upstream and downstream of the automatic pressure control valve, and the pressure control effect is influenced is avoided.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a reaction chamber tail gas pressure control device and semiconductor process equipment.
Background
The compactness and uniformity of the silicon dioxide film of the wafer in the process chamber of the oxidation furnace are important indexes for measuring the capacity of the oxidation process equipment. Among the vertical oxidation process equipment, the wet oxygen oxidation process has the advantage of a fast film formation rate, and has been widely used by integrated circuit manufacturers. In such an apparatus, stable pressure control plays a decisive role in the film thickness and uniformity of the oxide film formed in the chamber.
Pure water vapor is an indispensable reaction gas in a wet oxygen oxidation process, along with the development of a process procedure, the requirement of stable pressure control in a process chamber is higher and higher, the duration of the wet oxygen process is longer and longer, and the hydrogen-oxygen ratio of the wet oxygen process is also larger and larger, which means that more and more water vapor passes through a process exhaust end in unit time, and the duration is longer and longer, as shown in a relative pressure control system shown in fig. 1, the water vapor in the process chamber 100 is converted into liquid water under the action of a condensation pipe 500 and a condenser 400, the liquid water is collected into a water box 800 through a transverse connecting block 600, the water condensed inside an automatic pressure control valve 1100 above the transverse connecting block 600 can also be discharged into the water box 800 through an automatic pressure control valve drain pipe 900, and the water in the water box 800 is discharged through a drain pipe. Under the conditions of large hydrogen-oxygen ratio and long-time wet oxygen process, the condenser 400 and the condenser pipe 500 cannot condense water vapor into water along with the increase of the hydrogen-oxygen ratio and the increase of the wet oxygen process time infinitely, the amount of water to be condensed at the automatic pressure control valve 1100 increases along with the increase of the hydrogen-oxygen ratio of the wet oxygen process and the increase of the wet oxygen process time, the drainage capacity of the automatic pressure control valve drainage pipe 900 is not enough to discharge the increased condensed water in time, the increased condensed water is retained in the automatic pressure control valve 1100, the movement of a piston is retarded, the response of the automatic pressure control valve 1100 is slowed, and the pressure control is unstable; in addition, while the variety of process gases in the dry oxygen process is changed more, the volume of process exhaust is also continuously increased, the change of the temperature used in the process is more and more, the change of the temperature can cause the gas with large flow rate to generate an obvious volume change, the difficulty of pressure control is increased, the pressure control fluctuation is further increased, and the pressure control stability requirement is not met.
Therefore, there is a need for a device for controlling the pressure of the exhaust gas from a reaction chamber, which can solve at least one of the above problems.
Disclosure of Invention
The invention aims to provide a reaction chamber tail gas pressure control device and semiconductor process equipment, which can still realize stable pressure control under the condition that the hydrogen-oxygen ratio of a wet oxygen process is continuously increased and the process duration is continuously prolonged.
In order to achieve the above object, the present invention provides a reaction chamber exhaust gas pressure control device, which includes a first condensation assembly, a transverse connection block, a first exhaust pipe, an automatic pressure control valve, a second exhaust pipe, and a water box disposed below the transverse connection block and communicated with the first exhaust pipe, wherein the first condensation assembly, the transverse connection block, the first exhaust pipe, the automatic pressure control valve, the second exhaust pipe, the water box disposed below the transverse connection block are sequentially connected to an exhaust port of a reaction chamber, a pressure detection pipe is further disposed between the automatic pressure control valve and the beam connection block, and the device further includes a temperature control assembly and a drain pipe, wherein:
the temperature control assembly is used for maintaining the first exhaust pipe and the second exhaust pipe within a preset temperature range so as to stabilize the temperature of tail gas entering and exiting the automatic pressure control valve;
the second exhaust pipe is connected with the water box through the drain pipe and is used for being connected with the plant exhaust pipe.
Preferably, the temperature control assembly comprises a controller, a first heating belt, a first temperature sensor, a second heating belt and a second temperature sensor;
first heating band with the second heating band wrap up respectively in first blast pipe with the second blast pipe, first temperature sensor with second temperature sensor is used for gathering respectively first blast pipe with the temperature of second blast pipe, the controller basis first temperature sensor with the temperature control that second temperature sensor gathered first heating band with the operation of second heating band will first blast pipe with the second blast pipe maintains predetermine the temperature range.
Preferably, the preset temperature range is 100-120 ℃.
Preferably, the second exhaust pipe is inverted U-shaped and is connected to the top end of the automatic pressure control valve.
Preferably, the condenser further comprises a second condensation assembly, wherein the second condensation assembly comprises a second condenser and a second condensation pipe arranged in the second condenser;
the second condensation pipe is arranged between the second exhaust pipe and the drain pipe.
Preferably, the second condensation pipe, the drain pipe and the plant exhaust pipe are connected by a tee joint.
Preferably, the gas-liquid separator further comprises a gas exhaust transition pipe, and two ends of the gas exhaust transition pipe are respectively connected with the gas exhaust port of the reaction chamber and the inlet of the first condensation assembly in a sealing manner.
Preferably, the first condensation assembly comprises a first condenser and a first condensation pipe arranged in the first condenser, and one end of the first condensation pipe is connected to the exhaust transition pipe through a first joint.
Preferably, a channel which is obliquely arranged relative to the horizontal direction is arranged in the transverse connecting block;
the first condensation pipe is connected to the higher end of the channel, and the first exhaust pipe and the water box are connected to the lower end of the channel.
The invention also provides semiconductor process equipment which comprises a reaction chamber and the reaction chamber tail gas pressure control device, wherein the reaction chamber tail gas pressure control device is connected to the exhaust port of the reaction chamber.
The invention relates to a reaction chamber tail gas pressure control device, which has the beneficial effects that: reaction chamber's tail gas gets into first exhaust pipe and automatic accuse after through the condensation of first condensation subassembly in proper order and presses the valve, tail gas through temperature control assembly in with first exhaust pipe maintains at predetermineeing the temperature range, the water of avoiding wet oxygen technology to produce presses the inside condensation of valve at automatic accuse, the accumulation, carry out temperature control to tail gas in the second exhaust pipe simultaneously through temperature control assembly, make the tail gas temperature stability that the automatic accuse pressed the valve of business turn over, thereby avoid the temperature variation of the upper reaches and the low reaches that automatic accuse pressed the valve to lead to the volume of the tail gas of automatic accuse pressure valve inside to change, the effect is pressed in the influence accuse.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts throughout.
FIG. 1 illustrates a schematic diagram of a relative pressure control system in the prior art;
fig. 2 shows a schematic structural diagram of a reaction chamber exhaust gas pressure control device according to an exemplary embodiment of the present invention.
Description of reference numerals:
1. the system comprises a reaction chamber, 2, an exhaust transition pipe, 3, a first joint, 4, a first condenser, 5, a first condensation pipe, 6, a transverse connecting block, 7, a water box, 8, a drain pipe, 9, a tee joint, 10, a first exhaust pipe, 11, a first heating belt, 12, a first temperature sensor, 13, a pressure detection pipe, 14, a second temperature sensor, 15, a second exhaust pipe, 16, a second heating belt, 17, an automatic pressure control valve, 18, a second joint, 19, a second condenser, 20, a second condensation pipe, 21 and a third exhaust pipe;
100 process chambers, 200 exhaust transition pipes, 400 condensers, 500 condenser pipes, 600 transverse connecting blocks, 700 water box plugs, 800 water boxes, 900 automatic pressure control valve drain pipes, 1000 exhaust pipes and 1100 automatic pressure control valves.
Detailed Description
Preferred embodiments of the present invention will be described in more detail below. While the following describes preferred embodiments of the present invention, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Fig. 1 shows a relative pressure control system shown in the prior art, wherein, a process chamber 100 is connected with an exhaust transition pipe 200 in a sealing manner, the exhaust transition pipe 200, a condenser pipe 500, a transverse connection block 600, an exhaust pipe 1000, an automatic pressure control valve 1100 and a plant exhaust pipe 1300 are sequentially connected end to end, the condenser pipe 500 is arranged in the condenser 400, a water box 800 is connected below the transverse connection block 600, a water box plug 700 is connected with the water box 800 in a sealing manner, an automatic pressure control drain pipe 900 is respectively connected with the automatic pressure control valve 1100 and the water box 800, and a pressure detection pipe 1200 is respectively connected with the automatic pressure control valve 1100 and the transverse connection block 600. Under the wet oxygen process, the pressure control system can condense most of water vapor into liquid water under the combined action of the condenser 400 and the condenser pipe 500, under the action of gravity, cooling water flows to the transverse connection block 600, then flows into the water box 800, and is finally discharged to the plant along the water discharge pipe, a small part of water vapor is condensed out at the rear end of the transverse connection block 600, and water condensed inside the automatic control valve 1100 can be discharged into the water box 800 through the automatic pressure control valve water discharge pipe 900, and is finally discharged to the plant along the water discharge pipe.
The absolute pressure control system and the relative pressure control system are different in condensate steam and water drainage, and the requirements for the structures of the water boxes are different due to the difference in the performance of the pressure control valves.
The relative pressure control system and the absolute pressure control system can meet the use requirements in a smaller proportion of hydrogen and oxygen and a shorter time, however, under a large hydrogen-oxygen ratio and a long-time wet oxygen process, the condenser 400 and the condenser pipe 500 cannot condense water vapor into water along with the increase of the hydrogen-oxygen ratio and the increase of the wet oxygen process time infinitely, the amount of water to be condensed at the automatic pressure control valve increases along with the increase of the hydrogen-oxygen ratio of the wet oxygen process and the increase of the wet oxygen process time, the drainage capacity of the drainage pipe of the automatic pressure control valve is not enough to discharge the increased condensed water in time, the increased condensed water is retained in the automatic pressure control valve, the movement of a piston is retarded, the response of the automatic pressure control valve is slowed, the pressure control is unstable, the sensitivity of the reaction of the automatic pressure control valve is reduced, the pressure control precision of the pressure control valve is directly influenced, and the pressure in the process chamber generates larger fluctuation in the back process of the wet oxygen process. During the dry oxygen process, because the process temperature of each step is different in the technological process, the process exhaust temperature inside the pressure control valve also changes, when the temperature change is more violent, because the expansion with heat and contraction with cold of gas leads to the pressure control environment of the pressure control valve to change violently, the pressure control degree of difficulty increases to the fluctuation of pressure control also can grow.
In order to solve the problems in the prior art, the invention provides a reaction chamber tail gas pressure control device, as shown in fig. 2, comprising a first condensation component, a transverse connection block 6, a first exhaust pipe 10, an automatic pressure control valve 17, a second exhaust pipe 15, a water box 7 which is arranged below the transverse connection block 6 and communicated with the first exhaust pipe 10, a pressure detection pipe 13 which is arranged between the automatic pressure control valve 17 and the beam connection block 6, a temperature control component and a drain pipe 8, wherein the first condensation component, the transverse connection block 6, the first exhaust pipe 10, the automatic pressure control valve 17 and the second exhaust pipe 15 are sequentially connected with an exhaust port of a reaction chamber 1, the temperature control component and the drain pipe 8 are further included:
the temperature control assembly is used for maintaining the first exhaust pipe 10 and the second exhaust pipe 15 within a preset temperature range so as to stabilize the temperature of the tail gas entering and exiting the automatic pressure control valve 17;
the second exhaust pipe 15 is connected to the water box 7 through a drain pipe 8, and is used for connection to a plant exhaust pipe 21.
According to the tail gas pressure control device of the reaction chamber, tail gas of the reaction chamber is condensed by the first condensing assembly and then sequentially enters the first exhaust pipe 10 and the automatic pressure control valve 17, the temperature control assembly maintains the tail gas in the first exhaust pipe 10 within a preset temperature range, water generated by a wet oxygen process is prevented from being condensed and accumulated inside the automatic pressure control valve 17, the temperature control assembly simultaneously controls the temperature of the tail gas in the second exhaust pipe 15 located at the downstream of the automatic pressure control valve 17, the temperature of the tail gas entering and exiting the automatic pressure control valve 17 is stable, and therefore the problem that the volume of the tail gas inside the automatic pressure control valve 17 is changed due to the temperature change at the upstream and the downstream of the automatic pressure control valve 17, and the pressure control effect is influenced is avoided.
As a preferred aspect of the present application, the temperature control assembly includes a controller, a first heating belt 11, a first temperature sensor 12, a second heating belt 16, and a second temperature sensor 14;
the first heating belt 11 and the second heating belt 16 are respectively wrapped on the first exhaust pipe 10 and the second exhaust pipe 15, the first temperature sensor 12 and the second temperature sensor 14 are respectively used for acquiring the temperatures of the first exhaust pipe 10 and the second exhaust pipe 15, and the controller controls the first heating belt 11 and the second heating belt 16 to operate according to the temperatures acquired by the first temperature sensor 12 and the second temperature sensor 14, so that the first exhaust pipe 10 and the second exhaust pipe 15 are maintained within a preset temperature range.
The first exhaust pipe 10 and the second exhaust pipe 15 are respectively maintained in a preset temperature range through the temperature control assembly, on one hand, the temperature of tail gas condensed by the first condensation assembly can be increased, water generated by a wet oxygen process is prevented from being condensed and accumulated in the automatic pressure control valve 17, condensate water cannot be generated in the automatic pressure control valve 17, on the other hand, the temperature of the tail gas entering and exiting the automatic pressure control valve 17 is maintained within a working temperature required by the pressure control valve, a stable pressure control environment is provided for the automatic pressure control valve 17, the volume change of the tail gas caused by temperature change is avoided, the pressure control effect of the automatic pressure control valve 17 is influenced, and the automatic pressure control valve 17 is not influenced by the hydrogen-oxygen ratio and the duration of the wet oxygen process;
wherein, heat the tail gas in the automatic pressure control valve 17 of business turn over respectively through first heating band 11 and second heating band 16, can avoid the water that the wet oxygen technology produced to press valve inside condensation, accumulation at the accuse, and the controller can feed back according to temperature sensor's monitoring signal, and the control heating band makes the temperature of heating band heating maintain at stable value, avoids the volume that temperature variation leads to the tail gas of automatic pressure control valve 17 inside to change.
The preset temperature range is 100-120 ℃.
As a preferred embodiment of the present application, the preset temperature is 110 ℃. The wet oxygen process is carried out at the temperature, no condensed water is generated in the automatic pressure control valve 17, the temperature of the tail gas entering the automatic pressure control valve 17 is always within the working temperature required by the pressure control valve through the temperature control assembly, and the temperature in the second exhaust pipe 15 at the downstream of the automatic pressure control valve 17 is also maintained in the range, so that the temperature before and after the automatic pressure control valve 17 is not changed or is changed very little, the automatic pressure control valve 17 is in a stable pressure control environment and is not influenced by the hydrogen-oxygen ratio and the time length of the wet oxygen process, for the dry oxygen process, even if the temperature in the reaction chamber 1 is different in different dry oxygen processes, the temperature of the tail gas of the reaction chamber 1 reaching the automatic pressure control valve 17 is always a stable value, namely within the preset temperature range, under the stable value, the volume of the tail gas in the automatic pressure control valve 17 cannot expand due to the change of the temperature, the automatic pressure control valve 17 has a good pressure control effect.
Preferably, the second exhaust pipe 15 is of an inverted U shape and is connected to the top end of the automatic pressure control valve 17. The second heating belt 16 fitted to the second exhaust pipe 15 is also of an inverted U shape to wrap most of the second exhaust pipe 15.
In one embodiment of the present application, the first exhaust pipe 10 is a straight pipe, and the first heating belt 11 is a straight pipe.
The reaction chamber tail gas pressure control device also comprises a second condensation component, wherein the second condensation component comprises a second condenser 19 and a second condensation pipe 20 arranged in the second condenser 19;
the second condensation duct 20 is provided between the second exhaust duct 15 and the drain duct 8.
The second condensation pipe 20, the drain pipe 8 and the plant exhaust pipe 21 are connected by a tee joint 9.
The second condensing assembly is hermetically connected with the second exhaust pipe 15 through a second joint 18, and is configured to further cool and condense the tail gas of the reaction chamber 1 in the second exhaust pipe 15, condense a part of the water vapor in a second condensing pipe 20 into liquid water, discharge the cooled water vapor to a plant through a plant exhaust pipe 21, and collect the liquid water in a water box 7 through a drain pipe 8.
The reaction chamber tail gas pressure control device further comprises an exhaust transition pipe 2, and two ends of the exhaust transition pipe 2 are respectively connected with an exhaust port of the reaction chamber 1 and an inlet of the first condensation component in a sealing mode.
The exhaust transition pipe 2 is used for introducing tail gas of the reaction chamber 1 into the first condensation assembly, one end of the exhaust transition pipe 2 is communicated with an exhaust port of the reaction chamber 1 through a joint, and the other end of the exhaust transition pipe is communicated with the first condensation assembly in a sealing mode.
The first condensation assembly comprises a first condenser 4 and a first condensation pipe 5 arranged in the first condenser 4, and one end of the first condensation pipe 5 is connected to the exhaust transition pipe 2 through a first joint 3.
The existing automatic pressure control valve 17 comprises a relative pressure control valve used in a relative pressure control system and an absolute pressure control valve used in an absolute pressure control system, wherein the maximum temperature of exhaust allowed by the relative pressure control valve is 150 ℃, and the maximum temperature of exhaust allowed by the absolute pressure control valve is 120 ℃, so in the wet oxygen process, the exhaust of the high-temperature process exhausted by the exhaust port of the reaction chamber 1, namely the temperature of the tail gas of the reaction chamber 1 is as high as 800-1000 ℃, and the tail gas of the reaction chamber 1 is reduced to be below 100 ℃ through the first condenser 4 and the first condensation pipe 5, so that the tail gas is used for protecting a rear-end pipeline and the automatic pressure control valve 17; when the wet oxygen process is carried out, part of water vapor is condensed into liquid water in the first condensation pipe 5, and the liquid water flows into the water box 7 along the transverse connecting block 6 and is finally discharged to the plant; the tail gas cooled to below 100 ℃ by the first condenser 4 and the first condenser pipe 5 passes through the transverse connecting block 6, enters the automatic pressure control valve 17 through the first exhaust pipe 10, and is discharged to the plant exhaust pipe 21 through the second exhaust pipe 15. Be equipped with pressure measurement pipe 13 between automatic pressure control valve 17 and the transverse connection piece 6 for the pressure of the tail gas before the automatic pressure control valve 17 that gets into is detected, thereby automatic pressure regulation, this process belong to prior art, no longer describe repeatedly.
A channel which is obliquely arranged relative to the horizontal direction is arranged in the transverse connecting block 6;
In this embodiment, the water discharging pipe 8 is connected to the top of the water box 7 and is communicated with the inside of the water box 7, the lower end of the channel in the transverse connecting block 6 is connected to the water box 7 through a connecting pipe, the top end of the water box 7 of the connecting pipe is inserted into the inside of the water box 7 and is close to the bottom end, the water collected in the water box 7 is discharged through a water pipe, and the water pipe is upwards inserted into the inside of the water box 7 from the bottom end of the water box 7 and is close to the top end.
The invention relates to a reaction chamber tail gas pressure control device, which controls the temperature of tail gas entering and exiting an automatic pressure control valve through a temperature control assembly, avoids water generated by a wet oxygen process from condensing and accumulating in the automatic pressure control valve, and avoids the volume change of the tail gas in the automatic pressure control valve caused by temperature change, and the specific process is as follows: the tail gas discharged from the reaction chamber 1 is cooled by the first condensing assembly, and then the first exhaust pipe 10 is heated by the temperature control assembly, so that the temperature of the tail gas entering the automatic pressure control valve 17 is maintained in a preset temperature range, the problems of liquid water generation and water accumulation in the automatic pressure control valve 17 can be avoided, the water generated after condensation of the first condensing assembly is collected in the water box 7 through the transverse connecting block 6, the tail gas in the automatic pressure control valve 17 is discharged to the second exhaust pipe 15, through temperature control assembly to the heating of second blast pipe 15, make the tail gas temperature stability of business turn over automatic pressure control valve 17, avoid temperature variation and lead to the tail gas volume change, guarantee the stability that automatic pressure control valve 17 accuse was pressed, avoid influencing the accuse pressure effect that automatic pressure control valve 17 pressed, tail gas in the second blast pipe 15 passes through the cooling of second condensation subassembly, make the tail gas of discharging to the exhaust pipe 21 of factory's affair meet the requirements.
The reaction chamber tail gas pressure control device can provide an absolutely stable pressure control environment for the pressure control of the automatic pressure control valve 17 in a wet oxygen process with any temperature, any hydrogen-oxygen ratio and long time, thereby avoiding the accumulation of condensed water in the automatic pressure control valve 17, avoiding the problem that the response speed of the automatic pressure control valve 17 is reduced due to the blockage of the piston of the pressure control valve by the accumulated condensed water, and ensuring the pressure control stability of the automatic pressure control valve 17; meanwhile, in the dry oxygen process at any temperature, an absolutely stable pressure control temperature environment is provided for the pressure control of the automatic pressure control valve 17, the problem of expansion with heat and contraction with cold of the tail gas of the reaction chamber 1 along with the temperature change is solved, the air flow environment inside the automatic pressure control valve 17 is stabilized, the pressure control stability of the automatic pressure control valve 17 is ensured, and the problems of large hydrogen-oxygen ratio and large pressure control fluctuation of a relative pressure control system and an absolute pressure control system wet oxygen process can be solved simultaneously.
The invention also provides semiconductor process equipment which comprises a reaction chamber 1 and the reaction chamber tail gas pressure control device, wherein the reaction chamber tail gas pressure control device is connected with the exhaust port of the reaction chamber 1.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. The utility model provides a reaction chamber tail gas pressure control device, includes the first condensation subassembly, transverse connection piece (6), first exhaust pipe (10), automatic pressure control valve (17), second exhaust pipe (15) that connect gradually in the gas vent of reaction chamber (1) and locates the below of transverse connection piece (6), and with water box (7) of transverse connection piece (6) intercommunication, automatic pressure control valve (17) with still be equipped with pressure detection pipe (13) between crossbeam connecting block (6), its characterized in that still includes temperature control subassembly and drain pipe (8), wherein:
the temperature control assembly is used for maintaining the first exhaust pipe (10) and the second exhaust pipe (15) within a preset temperature range so as to stabilize the temperature of tail gas entering and exiting the automatic pressure control valve (17);
the second exhaust pipe (15) is connected with the water box (7) through the drain pipe (8) and is used for being connected with a plant exhaust pipe (21).
2. The reaction chamber exhaust gas pressure control device according to claim 1, wherein the temperature control assembly comprises a controller, a first heating belt (11), a first temperature sensor (12), a second heating belt (16) and a second temperature sensor (14);
first heating band (11) with second heating band (16) wrap up respectively in first exhaust pipe (10) with second exhaust pipe (15), first temperature sensor (12) with second temperature sensor (14) are used for gathering respectively first exhaust pipe (10) with the temperature of second exhaust pipe (15), the controller basis first temperature sensor (12) with the temperature control that second temperature sensor (14) gathered first heating band (11) with the operation of second heating band (16), will first exhaust pipe (10) with second exhaust pipe (15) maintain in predetermineeing the temperature range.
3. The apparatus of claim 1, wherein the predetermined temperature range is 100 ℃ to 120 ℃.
4. The apparatus for controlling the pressure of exhaust gas from a reaction chamber according to claim 1, wherein the second exhaust pipe (15) is of an inverted U shape and is connected to the top end of the automatic pressure control valve (17).
5. The reaction chamber tail gas pressure control device according to claim 1, further comprising a second condensing assembly, wherein the second condensing assembly comprises a second condenser (19) and a second condensing pipe (20) arranged in the second condenser (19);
the second condensation pipe (20) is arranged between the second exhaust pipe (15) and the drain pipe (8).
6. The reaction chamber offgas pressure control apparatus of claim 5, wherein the second condensation duct (20), the drain duct (8) and the plant vent duct (21) are connected by a tee joint (9).
7. The reaction chamber tail gas pressure control device according to claim 1, further comprising an exhaust transition pipe (2), wherein two ends of the exhaust transition pipe (2) are respectively connected with the exhaust port of the reaction chamber (1) and the inlet of the first condensation assembly in a sealing manner.
8. The reaction chamber tail gas pressure control device according to claim 7, characterized in that the first condensation assembly comprises a first condenser (4) and a first condensation pipe (5) arranged in the first condenser (4), and one end of the first condensation pipe (5) is connected to the exhaust transition pipe (2) through a first joint (3).
9. The reaction chamber tail gas pressure control device according to claim 8, characterized in that a channel which is obliquely arranged relative to the horizontal direction is arranged in the transverse connecting block (6);
the first condensation pipe (5) is connected to the higher end of the passage, and the first exhaust pipe (10) and the water box (7) are connected to the lower end of the passage.
10. Semiconductor processing equipment, characterized in that it comprises a reaction chamber (1) and a reaction chamber off-gas pressure control device according to any one of claims 1 to 9, said reaction chamber off-gas pressure control device being connected to an exhaust of said reaction chamber (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111553963.0A CN114300386A (en) | 2021-12-17 | 2021-12-17 | Reaction chamber tail gas pressure control device and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111553963.0A CN114300386A (en) | 2021-12-17 | 2021-12-17 | Reaction chamber tail gas pressure control device and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114300386A true CN114300386A (en) | 2022-04-08 |
Family
ID=80967711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111553963.0A Pending CN114300386A (en) | 2021-12-17 | 2021-12-17 | Reaction chamber tail gas pressure control device and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114300386A (en) |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293712A (en) * | 1996-04-25 | 1997-11-11 | Nec Corp | Vertical type heat treatment device |
| KR20010058397A (en) * | 1999-12-27 | 2001-07-05 | 박종섭 | Inhibitor device for accumulating impurity in exhausting pipe |
| KR20050065739A (en) * | 2003-12-23 | 2005-06-30 | 동부아남반도체 주식회사 | Exhaust system of furnace |
| KR20060028008A (en) * | 2004-09-24 | 2006-03-29 | 삼성전자주식회사 | Gas exhaust apparatus of semiconductor manufacturing equipment |
| CN1841654A (en) * | 2005-03-31 | 2006-10-04 | 东京毅力科创株式会社 | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
| KR100782484B1 (en) * | 2006-07-13 | 2007-12-05 | 삼성전자주식회사 | Heat treatment equipment |
| CN101459042A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Exhaust system and wafer heat treatment apparatus |
| KR20090068058A (en) * | 2007-12-22 | 2009-06-25 | 주식회사 동부하이텍 | Exhaust gas pressure control apparatus for semiconductor equipment |
| KR20090125936A (en) * | 2008-06-03 | 2009-12-08 | 세메스 주식회사 | Apparatus for exhausting and apparatus for processing a glass including the same |
| WO2010019759A2 (en) * | 2008-08-13 | 2010-02-18 | Advanced Energy Industries. Inc. | System and method for monitoring control status of an exhaust apparatus pressure control system |
| CN102024742A (en) * | 2009-09-16 | 2011-04-20 | 株式会社日立国际电气 | Substrate processing method and substrate processing apparatus |
| KR101347602B1 (en) * | 2013-01-21 | 2014-01-23 | 박호현 | Automatic pressure controller having high stability control valve for semi-conducter process |
| CN106505016A (en) * | 2016-10-21 | 2017-03-15 | 北京七星华创电子股份有限公司 | There is the semiconductor heat treatment equipment and control method of process duct pressure control device |
| CN110931340A (en) * | 2019-12-27 | 2020-03-27 | 苏州芯慧联半导体科技有限公司 | Effectively prevent tail gas crystallization wall built-up's tail gas processing apparatus for dry etching |
| CN113699590A (en) * | 2021-08-27 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Semiconductor heat treatment equipment and control method of pressure in process chamber thereof |
-
2021
- 2021-12-17 CN CN202111553963.0A patent/CN114300386A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293712A (en) * | 1996-04-25 | 1997-11-11 | Nec Corp | Vertical type heat treatment device |
| KR20010058397A (en) * | 1999-12-27 | 2001-07-05 | 박종섭 | Inhibitor device for accumulating impurity in exhausting pipe |
| KR20050065739A (en) * | 2003-12-23 | 2005-06-30 | 동부아남반도체 주식회사 | Exhaust system of furnace |
| KR20060028008A (en) * | 2004-09-24 | 2006-03-29 | 삼성전자주식회사 | Gas exhaust apparatus of semiconductor manufacturing equipment |
| CN1841654A (en) * | 2005-03-31 | 2006-10-04 | 东京毅力科创株式会社 | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
| KR100782484B1 (en) * | 2006-07-13 | 2007-12-05 | 삼성전자주식회사 | Heat treatment equipment |
| CN101459042A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Exhaust system and wafer heat treatment apparatus |
| KR20090068058A (en) * | 2007-12-22 | 2009-06-25 | 주식회사 동부하이텍 | Exhaust gas pressure control apparatus for semiconductor equipment |
| KR20090125936A (en) * | 2008-06-03 | 2009-12-08 | 세메스 주식회사 | Apparatus for exhausting and apparatus for processing a glass including the same |
| WO2010019759A2 (en) * | 2008-08-13 | 2010-02-18 | Advanced Energy Industries. Inc. | System and method for monitoring control status of an exhaust apparatus pressure control system |
| CN102024742A (en) * | 2009-09-16 | 2011-04-20 | 株式会社日立国际电气 | Substrate processing method and substrate processing apparatus |
| KR101347602B1 (en) * | 2013-01-21 | 2014-01-23 | 박호현 | Automatic pressure controller having high stability control valve for semi-conducter process |
| CN106505016A (en) * | 2016-10-21 | 2017-03-15 | 北京七星华创电子股份有限公司 | There is the semiconductor heat treatment equipment and control method of process duct pressure control device |
| CN110931340A (en) * | 2019-12-27 | 2020-03-27 | 苏州芯慧联半导体科技有限公司 | Effectively prevent tail gas crystallization wall built-up's tail gas processing apparatus for dry etching |
| CN113699590A (en) * | 2021-08-27 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Semiconductor heat treatment equipment and control method of pressure in process chamber thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7316205B2 (en) | Steam-heating apparatus | |
| CN114733270B (en) | Reverse flow condensation water separation device and semiconductor process equipment | |
| CN110357046A (en) | A kind of nitrogen circulation purification devices, nitrogen circulation purification system and method | |
| CN114300386A (en) | Reaction chamber tail gas pressure control device and semiconductor process equipment | |
| CN109724426A (en) | Glass furnace controling of the pressure of the oven system | |
| CN110867399B (en) | Pressure control system suitable for negative pressure diffusion furnace | |
| JPS6059541B2 (en) | Equipment for measuring the amount of water vapor in high-temperature gas | |
| CN215492194U (en) | Glass kiln pressure measuring device and glass kiln pressure regulating system | |
| CN114315103B (en) | Kiln pressure control system and kiln assembly | |
| CN112797607B (en) | Heat recovery system, control method and air conditioning unit | |
| JPH093456A (en) | Control over internal pressure of carbonization chamber in coke oven | |
| CN212438235U (en) | Steaming and baking equipment | |
| WO2014130139A1 (en) | Level control in an evaporator | |
| US20020178604A1 (en) | Apparatus for drying solid insulation of an electrical device | |
| JP3700662B2 (en) | Fuel cell system | |
| CN111146517A (en) | Battery formation constant temperature equipment and control method | |
| CN214012956U (en) | Pressure control system and reaction furnace | |
| CN220420531U (en) | Cooling system and silicon carbide high-temperature heat treatment equipment | |
| CN216745567U (en) | Steam heater with novel structure | |
| KR100250504B1 (en) | Heat exchanger auto temperature controlling device and the method | |
| CN218188004U (en) | Double-temperature cold trap device | |
| JP5495378B2 (en) | Method and apparatus for purging exhaust gas piping | |
| CN212524091U (en) | Synthetic cauldron | |
| CN117824164A (en) | Throttle valve control method of low-temperature heat pump EVI water heater | |
| CN217154613U (en) | Compressor temperature control device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |