CN114295205B - Photosensitive circuit, photosensitive control method, photosensitive module and display device - Google Patents
Photosensitive circuit, photosensitive control method, photosensitive module and display device Download PDFInfo
- Publication number
- CN114295205B CN114295205B CN202111648918.3A CN202111648918A CN114295205B CN 114295205 B CN114295205 B CN 114295205B CN 202111648918 A CN202111648918 A CN 202111648918A CN 114295205 B CN114295205 B CN 114295205B
- Authority
- CN
- China
- Prior art keywords
- control
- photosensitive
- nth
- conversion
- reset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 127
- 230000003287 optical effect Effects 0.000 claims description 44
- 238000005286 illumination Methods 0.000 claims description 22
- 238000004891 communication Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 206010070834 Sensitisation Diseases 0.000 claims 3
- 230000008313 sensitization Effects 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 210000005252 bulbus oculi Anatomy 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 101100191136 Arabidopsis thaliana PCMP-A2 gene Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 101100048260 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UBX2 gene Proteins 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 101150018075 sel-2 gene Proteins 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The invention provides a photosensitive circuit, a photosensitive control method, a photosensitive module and a display device. The photosensitive circuit comprises N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit and a reading control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N; the nth transfer control circuit controls the output end of the nth photosensitive element to be communicated with the conversion control end under the control of the nth transfer control signal; the conversion circuit controls the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end; the read control circuit controls the output voltage signal to be transmitted to the reset read line under the control of the read control signal. The invention improves the light-sensitive area and the photoelectric conversion efficiency.
Description
Technical Field
The present invention relates to the field of photosensitive technologies, and in particular, to a photosensitive circuit, a photosensitive control method, a photosensitive module, and a display device.
Background
The related photosensitive circuits adopt a large number of transistors and signal lines, so that the photosensitive area is small, and the photoelectric conversion efficiency is low for weak photosensitive environments.
Disclosure of Invention
The invention mainly aims to provide a photosensitive circuit, a photosensitive control method, a photosensitive module and a display device, and solves the problems of small photosensitive area and low photoelectric conversion efficiency of the conventional photosensitive circuit.
In order to achieve the above object, an embodiment of the present invention provides a photosensitive circuit, including N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit, and a read control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N;
the n-th photosensitive element is used for sensing optical signals, converting the optical signals into corresponding charge signals and outputting the charge signals through an output end of the n-th photosensitive element;
the n-th transfer control circuit is respectively and electrically connected with the n-th transfer control line, the output end of the n-th photosensitive element and the conversion control end and is used for controlling the communication between the output end of the n-th photosensitive element and the conversion control end under the control of an n-th transfer control signal provided by the n-th transfer control line;
the reset circuit is electrically connected with the reset reading line and the conversion control end and is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
The conversion circuit is respectively and electrically connected with the conversion control end, the first voltage line and the conversion output end and is used for controlling the conversion output end to output corresponding output voltage signals under the control of the potential of the conversion control end;
the reading control circuit is respectively and electrically connected with the reading control line, the conversion output end and the reset reading line and is used for controlling the output voltage signal to be transmitted to the reset reading line under the control of the reading control signal provided by the reading control line.
Optionally, the optical signal is an infrared optical signal or an ambient optical signal.
Optionally, the nth photosensitive element is an nth photodiode;
the anode of the nth photodiode is electrically connected with the second voltage end, and the cathode of the nth photodiode is the output end of the nth photosensitive element;
the nth photodiode is used for sensing an infrared light signal or an ambient light signal.
Optionally, the nth transfer control circuit includes an nth first transistor;
the control electrode of the nth first transistor is electrically connected with the nth transfer control line, the first electrode of the nth first transistor is electrically connected with the output end of the nth photosensitive element, and the second electrode of the nth first transistor is electrically connected with the conversion control end.
Optionally, the conversion circuit includes a second transistor;
the control electrode of the second transistor is electrically connected with the conversion control end, the first electrode of the second transistor is electrically connected with the first voltage line, and the second electrode of the second transistor is electrically connected with the conversion output end.
Optionally, the read control circuit includes a third transistor;
the control electrode of the third transistor is electrically connected to the read control line, the first electrode of the third transistor is electrically connected to the conversion output terminal, and the second electrode of the third transistor is electrically connected to the reset read line.
Optionally, the reset circuit includes a fourth transistor;
the control electrode of the fourth transistor and the first electrode of the fourth transistor are electrically connected with the reset reading line, and the second electrode of the fourth transistor is electrically connected with the conversion control end.
The embodiment of the invention provides a photosensitive control method which is applied to a photosensitive circuit, wherein a photosensitive period comprises N photosensitive stages which are sequentially arranged, and an nth photosensitive stage comprises an nth reset time period, an nth first reading time period, an nth transferring time period and an nth second reading time period which are sequentially arranged; the photosensitive control method comprises the following steps:
In the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by a reset reading line;
in the nth first reading period, the conversion circuit controls the output of a corresponding reference voltage signal through the conversion output terminal under the control of the potential of the conversion control terminal; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of the nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end, so that the potential of the conversion control end is changed;
an nth second reading time period, wherein the conversion circuit controls the output of a corresponding output voltage signal through the conversion output end under the control of the potential of the conversion control end; the read control circuit controls the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by a read control line; and obtaining the illumination intensity of the light signal according to the output voltage signal and the reference voltage signal.
The embodiment of the invention provides a photosensitive module, which comprises a plurality of rows and a plurality of columns of photosensitive circuits.
Optionally, two adjacent columns of photosensitive circuits are electrically connected with the same column of first voltage line, and the two adjacent columns of photosensitive circuits are arranged on two sides of the first voltage line in a mirror image mode.
The embodiment of the invention provides a display device, which comprises a display panel and the photosensitive module;
the photosensitive module is arranged in the peripheral area of the display panel.
The photosensitive circuit, the photosensitive control method, the photosensitive module and the display device share the reset circuit, the conversion circuit and the reading control circuit through the N photosensitive units, so that the number of the adopted transistors is reduced while the number of the adopted photosensitive elements is ensured, the number of the adopted signal lines is reduced, the photosensitive area can be increased, and the photoelectric conversion efficiency is improved.
Drawings
FIG. 1 is a block diagram of a photosensitive circuit according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a photosensitive circuit according to at least one embodiment of the invention;
FIG. 3 is a timing diagram illustrating operation of at least one embodiment of the photosensitive circuit shown in FIG. 2 according to the present invention;
fig. 4 is a circuit diagram of a photosensitive module including two rows and two columns of photosensitive circuits according to at least one embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The transistors used in all embodiments of the present invention may be transistors, thin film transistors or field effect transistors or other devices having the same characteristics. In the embodiment of the invention, in order to distinguish the two poles of the transistor except the control pole, one pole is called a first pole, and the other pole is called a second pole.
In actual operation, when the transistor is a thin film transistor or a field effect transistor, the first electrode may be a drain electrode, and the second electrode may be a source electrode; alternatively, the first pole may be a source and the second pole may be a drain.
The photosensitive circuit comprises N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit and a reading control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N;
The n-th photosensitive element is used for sensing optical signals, converting the optical signals into corresponding charge signals and outputting the charge signals through an output end of the n-th photosensitive element;
the n-th transfer control circuit is respectively and electrically connected with the n-th transfer control line, the output end of the n-th photosensitive element and the conversion control end and is used for controlling the communication between the output end of the n-th photosensitive element and the conversion control end under the control of an n-th transfer control signal provided by the n-th transfer control line;
the reset circuit is electrically connected with the reset reading line and the conversion control end and is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
the conversion circuit is respectively and electrically connected with the conversion control end, the first voltage line and the conversion output end and is used for controlling the output of corresponding output voltage signals through the conversion output end under the control of the potential of the conversion control end;
the reading control circuit is respectively and electrically connected with the reading control line, the conversion output end and the reset reading line and is used for controlling the output voltage signal to be transmitted to the reset reading line under the control of the reading control signal provided by the reading control line.
In the photosensitive circuit provided by the embodiment of the invention, the reset circuit, the conversion circuit and the reading control circuit are shared by the N photosensitive units, so that the number of the adopted photosensitive elements is ensured, the number of the adopted transistors is reduced, the number of the adopted signal lines is reduced, the photosensitive area is increased, and the photoelectric conversion efficiency is improved.
In the embodiment of the invention, the multiplexed reset read line is used for reset control and signal reading, so that the number of adopted signal lines is reduced.
When the photosensitive circuit disclosed by the embodiment of the invention works, the photosensitive period can comprise N photosensitive stages which are sequentially arranged, and the nth photosensitive stage comprises an nth reset time period, an nth first reading time period, an nth transferring time period and an nth second reading time period which are sequentially arranged;
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by a reset reading line;
in the nth first reading period, the conversion circuit controls the output of a corresponding reference voltage signal through the conversion output terminal under the control of the potential of the conversion control terminal; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
In the nth transfer period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of the nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end, so that the potential of the conversion control end is changed;
an nth second reading time period, wherein the conversion circuit controls the output of a corresponding output voltage signal through the conversion output end under the control of the potential of the conversion control end; the read control circuit controls the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by a read control line; and obtaining the illumination intensity of the light signal according to the output voltage signal and the reference voltage signal.
In a specific implementation, the illumination intensity of the optical signal can be obtained according to the voltage value of the output voltage signal and the voltage value of the reference voltage signal.
In at least one embodiment of the present invention, the optical signal is an infrared optical signal or an ambient optical signal.
In the related art, in a silicon-based display panel integrated with an infrared light sensing circuit, tracking recognition of an eyeball can be performed by an infrared sensing device provided in a peripheral region of the display panel. However, due to the lower photosensitivity of the conventional photosensitive circuit, the photo-generated current is low under the condition that the luminous flux of the infrared light is low after the infrared light is reflected by the eyeball. The related photosensitive circuits comprise a photosensitive device and four transistors, the four photosensitive circuits are electrically connected with six rows of control lines and four columns of signal lines, the number of the transistors and the number of the signal lines adopted by the related photosensitive circuits are large, the photosensitive area is small, and the photoelectric conversion efficiency is low for weak photosensitive environments. Based on this, the photosensitive circuit in the embodiment of the invention shares the reset circuit, the conversion circuit and the read control circuit by the N photosensitive units, so as to reduce the number of the adopted transistors, reduce the number of the adopted signal lines, improve the photosensitive area and improve the photoelectric conversion efficiency while guaranteeing the number of the adopted photosensitive elements.
In at least one embodiment of the present invention, N is equal to 4, but not limited thereto. In actual operation, N may be an integer greater than 1.
As shown in fig. 1, the photosensitive circuit according to at least one embodiment of the present invention includes a first photosensitive element 11, a second photosensitive element 12, a third photosensitive element 13, a fourth photosensitive element 14, a first transfer control circuit 21, a second transfer control circuit 22, a third transfer control circuit 23, a fourth transfer control circuit 24, a reset circuit 31, a conversion circuit 32, and a read control circuit 33;
the first photosensitive element 11 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the first photosensitive element 11;
the second photosensitive element 12 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the second photosensitive element 12;
the third photosensitive element 13 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the third photosensitive element 13;
the fourth photosensitive element 14 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the fourth photosensitive element 14;
The first transfer control circuit 21 is electrically connected to the first transfer control line TG1, the output end of the first photosensitive element 11, and the transfer control end FD, and is configured to control communication between the output end of the first photosensitive element 11 and the transfer control end FD under the control of a first transfer control signal provided by the first transfer control line TG 1;
the reset circuit 31 is electrically connected to the reset read line CR and the switching control terminal FD, and is configured to reset the potential of the switching control terminal FD under the control of a reset control signal provided by the reset read line CR;
the switching circuit 32 is electrically connected to the switching control terminal FD, the first voltage line V1, and the switching output terminal O1, respectively, and is configured to control outputting a corresponding output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD;
the read control circuit 33 is electrically connected to the read control line SEL, the switching output FD, and the reset read line CR, respectively, and is configured to control the output voltage signal to be transmitted to the reset read line CR under the control of a read control signal provided by the read control line SEL.
In at least one embodiment of the present invention, the first voltage line may be a high voltage line, but is not limited thereto.
In operation, at least one embodiment of the photosensitive circuit shown in fig. 1 of the present invention may include a first photosensitive stage, a second photosensitive stage, a third photosensitive stage, and a fourth photosensitive stage that are sequentially disposed, where the first photosensitive stage includes a first reset period, a first read period, a first transfer period, and a first second read period that are sequentially disposed; the second photosensitive stage comprises a second reset time period, a second first reading time period, a second transfer time period and a second reading time period which are sequentially arranged; the third photosensitive stage comprises a third reset time period, a third first reading time period, a third transfer time period and a third second reading time period which are sequentially arranged; the fourth photosensitive stage comprises a fourth reset time period, a fourth first reading time period, a fourth transfer time period and a fourth second reading time period which are sequentially arranged;
in the photosensitive period, the first photosensitive element 11 senses an optical signal and converts the optical signal into a corresponding charge signal, the second photosensitive element 12 senses an optical signal and converts the optical signal into a corresponding charge signal, the third photosensitive element 13 senses an optical signal and converts the optical signal into a corresponding charge signal, and the fourth photosensitive element 14 senses an optical signal and converts the optical signal into a corresponding charge signal;
In the first reset period, the reset circuit 31 resets the potential of the switching control terminal FD under the control of the reset control signal supplied from the reset read line CR;
in the first reading period, the switching circuit 32 controls the output of the first reference voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transmission of the first reference voltage signal to the reset read line CR under the control of a read control signal;
in the first transfer period, the first transfer control circuit 21 controls communication between the output terminal of the first photosensitive element 11 and the transfer control terminal FD under the control of the first transfer control signal supplied from the first transfer control line TG1 to transfer the corresponding charge signal output from the first photosensitive element 11 through the output terminal thereof to the transfer control terminal FD to change the potential of the transfer control terminal FD;
a first second reading period, the switching circuit 32 controlling the output of the first output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the first output voltage signal to the reset read line CR under the control of a read control signal supplied from the control line SEL; the illumination intensity of the light signal sensed by the first photosensitive element 11 can be obtained according to the first output voltage signal and the first reference voltage signal;
In the second reset period, the reset circuit 31 resets the potential of the switching control terminal FD under the control of the reset control signal supplied from the reset read line CR;
in the second first reading period, the switching circuit 32 controls the output of the second reference voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the second reference voltage signal to the reset read line CR under the control of a read control signal;
in the second transfer period, the second transfer control circuit 22 controls communication between the output terminal of the second photosensitive element 12 and the switching control terminal FD under the control of the second transfer control signal supplied from the second transfer control line TG2 to transfer the corresponding charge signal output from the second photosensitive element 12 through the output terminal thereof to the switching control terminal FD to change the potential of the switching control terminal FD;
a second reading period, the switching circuit 32 controlling the output of the second output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the second output voltage signal to the reset read line CR under the control of a read control signal supplied from the control line SEL; the illumination intensity of the optical signal sensed by the second photosensitive element 12 can be obtained according to the second output voltage signal and the second reference voltage signal;
In the third reset period, the reset circuit 31 resets the potential of the switching control terminal FD under the control of the reset control signal supplied from the reset read line CR;
in a third first reading period, the switching circuit 32 controls the output of a third reference voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the third reference voltage signal to be transmitted to the reset read line CR under the control of a read control signal;
in the third transfer period, the third transfer control circuit 23 controls communication between the output terminal of the third photosensitive element 13 and the switching control terminal FD under the control of the third transfer control signal supplied from the third transfer control line TG3 to transfer the corresponding charge signal output from the third photosensitive element 12 through the output terminal thereof to the switching control terminal FD to change the potential of the switching control terminal FD;
a third second reading period, the switching circuit 32 controlling the output of a third output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the third output voltage signal to the reset read line CR under the control of a read control signal supplied from the control line SEL; the illumination intensity of the light signal sensed by the third photosensitive element 13 can be obtained according to the third output voltage signal and the third reference voltage signal;
In the fourth reset period, the reset circuit 31 resets the potential of the switching control terminal FD under the control of the reset control signal supplied from the reset read line CR;
in a fourth first reading period, the switching circuit 32 controls the output of a fourth reference voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the fourth reference voltage signal to be transmitted to the reset read line CR under the control of a read control signal;
in the first transfer period, the fourth transfer control circuit 24 controls communication between the output terminal of the fourth photosensitive element 14 and the transfer control terminal FD under the control of the fourth transfer control signal supplied from the fourth transfer control line TG4 to transfer the corresponding charge signal output from the fourth photosensitive element 14 through the output terminal thereof to the transfer control terminal FD to change the potential of the transfer control terminal FD;
a fourth second reading period, the switching circuit 32 controlling the output of a fourth output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the fourth output voltage signal to be transmitted to the reset read line CR under the control of a read control signal supplied from the control line SEL; the illumination intensity of the light signal sensed by the fourth photosensitive element 14 can be obtained according to the fourth output voltage signal and the fourth reference voltage signal.
In operation of at least one embodiment of the photosensitive circuit of the present invention as shown in fig. 1, when the reset circuit 31 resets the potential of the conversion control terminal FD to the same reset voltage (which can turn on the transistor included in the conversion circuit 32) in the first reset period, the second reset period, the third reset period, and the fourth reset period, the voltage value of the first reference voltage signal, the voltage value of the second reference voltage signal, the voltage value of the third reference voltage signal, and the voltage value of the fourth reference voltage signal may be the same.
Optionally, the nth photosensitive element is an nth photodiode;
the anode of the nth photodiode is electrically connected with the second voltage end, and the cathode of the nth photodiode is the output end of the nth photosensitive element;
the nth photodiode is used for sensing an infrared light signal or an ambient light signal.
In at least one embodiment of the present invention, the second voltage terminal may be a ground terminal or a low voltage terminal, but is not limited thereto.
Optionally, the nth transfer control circuit includes an nth first transistor;
the control electrode of the nth first transistor is electrically connected with the nth transfer control line, the first electrode of the nth first transistor is electrically connected with the output end of the nth photosensitive element, and the second electrode of the nth first transistor is electrically connected with the conversion control end.
Optionally, the conversion circuit includes a second transistor;
the control electrode of the second transistor is electrically connected with the conversion control end, the first electrode of the second transistor is electrically connected with the first voltage line, and the second electrode of the second transistor is electrically connected with the conversion output end.
Optionally, the read control circuit includes a third transistor;
the control electrode of the third transistor is electrically connected to the read control line, the first electrode of the third transistor is electrically connected to the conversion output terminal, and the second electrode of the third transistor is electrically connected to the reset read line.
Optionally, the reset circuit includes a fourth transistor;
the control electrode of the fourth transistor and the first electrode of the fourth transistor are electrically connected with the reset reading line, and the second electrode of the fourth transistor is electrically connected with the conversion control end.
As shown in fig. 2, in at least one embodiment of the photosensitive circuit shown in fig. 1, the first photosensitive element is a first photodiode PD1, the second photosensitive element is a second photodiode PD2, the third photosensitive element is a third photodiode PD3, and the fourth photosensitive element is a fourth photodiode PD4;
The anode of the first photodiode PD1 is electrically connected with the ground, and the cathode of the first photodiode PD1 is the output end of the first photosensitive element;
the anode of the second photodiode PD2 is electrically connected to the ground, and the cathode of the second photodiode PD2 is the output end of the second photosensitive element;
the anode of the third photodiode PD3 is electrically connected to the ground, and the cathode of the third photodiode PD3 is the output end of the third photosensitive element;
the anode of the fourth photodiode PD4 is electrically connected to the ground, and the cathode of the fourth photodiode PD4 is the output end of the fourth photosensitive element;
the first photodiode PD1 is used for sensing infrared light signals, the second photodiode PD2 is used for sensing infrared light signals, the third photodiode PD3 is used for sensing infrared light signals, and the fourth photodiode PD4 is used for sensing infrared light signals;
the first transfer control circuit 21 includes a first transistor T1-1;
the gate of the first transistor T1-1 is electrically connected to the first transfer control line TG1, the source of the first transistor T1-1 is electrically connected to the cathode of the first photodiode PD1, and the drain of the first transistor T1-1 is electrically connected to the transfer control terminal FD;
The second transfer control circuit 22 includes a second first transistor T1-2;
the grid electrode of the second first transistor T1-2 is electrically connected with the second transfer control line TG2, the source electrode of the second first transistor T1-2 is electrically connected with the cathode electrode of the second photodiode PD2, and the drain electrode of the second first transistor T1-2 is electrically connected with the transfer control end FD;
the third transfer control circuit 23 includes a third first transistor T1-3;
the gate of the third first transistor T1-3 is electrically connected to the third transfer control line TG3, the source of the third first transistor T1-3 is electrically connected to the cathode of the third photodiode PD3, and the drain of the third first transistor T1-3 is electrically connected to the transfer control terminal FD;
the fourth transfer control circuit 24 includes fourth first transistors T1-4;
the gate of the fourth first transistor T1-4 is electrically connected to the fourth transfer control line TG4, the source of the fourth first transistor T1-4 is electrically connected to the cathode of the fourth photodiode PD4, and the drain of the fourth first transistor T1-4 is electrically connected to the transfer control terminal FD;
the conversion circuit 32 includes a second transistor T2;
The gate of the second transistor T2 is electrically connected to the switching control terminal FD, the drain of the second transistor T2 is electrically connected to the high voltage line Vd, and the source of the second transistor T2 is electrically connected to the switching output terminal O1; the high voltage line Vd is used for providing a high voltage VDD;
the read control circuit 33 includes a third transistor T3;
a gate of the third transistor T3 is electrically connected to the read control line SEL, a source of the third transistor T3 is electrically connected to the conversion output terminal O1, and a drain of the third transistor T3 is electrically connected to the reset read line CR;
the reset circuit 31 includes a fourth transistor T4;
the gate of the fourth transistor T4 and the source of the fourth transistor T4 are electrically connected to the reset read line CR, and the drain of the fourth transistor T4 is electrically connected to the switching control terminal FD.
In at least one embodiment of the photosensitive circuit shown in fig. 2, all the transistors are NMOS (N-type metal-oxide-semiconductor) transistors, but not limited thereto. In practical operation, the transistor may be a p-type transistor, or may be another type of transistor (e.g., a thin film transistor), but is not limited thereto.
At least one embodiment of the photosensitive circuit of the present invention shown in fig. 2 includes four photodiodes and seven transistors, and at least one embodiment of the photosensitive circuit of the present invention shown in fig. 2 employs seven signal lines; compared with the related art, at least one embodiment of the photosensitive circuit shown in fig. 2 of the present invention reduces the number of transistors and signal lines used while guaranteeing the number of photodiodes used, and can increase the photosensitive area and photoelectric conversion efficiency by increasing the size of the photodiodes.
In an implementation, the photodiode is fabricated on the silicon substrate, and at least one embodiment of the invention can make the size of the photodiode larger by reducing the space occupied by the transistor and the signal line, so as to increase the photosensitive area and further increase the photoelectric conversion efficiency.
As shown in fig. 3, in operation, at least one embodiment of the photosensitive circuit shown in fig. 2 of the present invention may include a first photosensitive stage S1, a second photosensitive stage S2, a third photosensitive stage S3, and a fourth photosensitive stage S4 sequentially disposed, where the first photosensitive stage S1 includes a first reset period S11, a first read period S12, a first transfer period S13, and a first second read period S14 sequentially disposed; the second photosensitive stage S2 includes a second reset period S21, a second first read period S22, a second transfer period S23, and a second read period S24, which are sequentially set; the third photosensitive stage S3 includes a third reset period S31, a third first reading period S32, a third transfer period S33, and a third second reading period S34, which are sequentially set; the fourth photosensitive stage S4 includes a fourth reset period S41, a fourth first reading period S42, a fourth transfer period S43, and a fourth second reading period S44, which are sequentially set;
Providing high voltage signals at the first, second, third and fourth photosensitive stages S1, S2, S3 and S4, SEL, and turning on the T3 to prepare for signal reading, so as to avoid signal noise caused by clock feedthrough when the T3 is turned on during signal reading;
in the first photosensitive stage S1, the second photosensitive stage S2, the third photosensitive stage S3 and the fourth photosensitive stage S4, the PD1 senses an infrared light signal to obtain a corresponding first charge signal, the PD2 senses an infrared light signal to obtain a corresponding second charge signal, the PD3 senses an infrared light signal to obtain a corresponding third charge signal, and the PD4 senses an infrared light signal to obtain a corresponding fourth charge signal;
in the first reset period S11, CR supplies a high voltage signal to reset the potential of FD; for example, CR may provide a high voltage VDD to reset the potential of FD to VDD-Vth, which is the threshold voltage of T4;
in the first reading period S12, the potential control T2 of FD is turned on to output the first reference voltage signal through the transfer output terminal O1;
in the first transfer period S13, TG1 provides a high voltage signal, T1-1 is turned on to transfer the first charge signal converted by PD1 to FD to change the potential of FD (the higher the illumination intensity of the optical signal sensed by PD1, the higher the degree of potential drop of FD, the lower the potential of FD, the lower the illumination intensity of the optical signal sensed by PD1, the lower the degree of potential drop of FD, the higher the potential of FD);
In the first transfer period S13, TG2, TG3 and TG4 all supply low voltage signals, T1-2, T1-3 and T1-4 all turn off;
in the first second reading period S14, TG1 provides a low voltage signal, and T1-1 is turned off; due to the effect of the gate-source parasitic capacitance Cgs1 of T1-1, the potential of FD is correspondingly reduced, at this time, T2 works in the saturation region, the potential of FD is related to the turn-on degree of T2 (when the potential of FD is lower, the turn-on degree of T2 is lower, when the potential of FD is higher, the turn-on degree of T2 is higher), and a first output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, wherein the voltage value of the first output voltage signal is related to the potential of FD (when the potential of FD is lower, the voltage value of the first output voltage signal is lower, and when the potential of FD is higher, the voltage value of the first output voltage signal is higher); according to the difference value between the voltage value of the first output voltage signal and the voltage value of the first reference voltage signal, the illumination intensity of the optical signal sensed by the PD1 can be obtained;
in the second reset period S21, CR supplies a high voltage signal to reset the potential of FD;
in the second first reading period S22, the potential control T2 of FD is turned on to output the second reference voltage signal through the transfer output terminal;
In the second transfer period S23, TG2 provides a high voltage signal, T1-2 is turned on to transfer the second charge signal converted by PD2 to FD to change the potential of FD (the higher the illumination intensity of the optical signal sensed by PD2, the higher the degree of potential drop of FD, the lower the potential of FD, the lower the illumination intensity of the optical signal sensed by PD2, the lower the degree of potential drop of FD, the higher the potential of FD);
in the second transfer period S23, TG1, TG3 and TG4 all supply low voltage signals, T1-1, T1-3 and T1-4 all turn off;
during a second read period S24, TG2 provides a low voltage signal, and T1-2 is turned off; due to the gate-source parasitic capacitance Cgs2 of T1-2, the potential of FD is correspondingly reduced, where T2 works in the saturation region, the potential of FD is related to the turn-on level of T2 (when the potential of FD is lower, the turn-on level of T2 is lower, and when the potential of FD is higher, the turn-on level of T2 is higher), and a second output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, the voltage value of the second output voltage signal is related to the potential of FD (when the potential of FD is lower, the voltage value of the second output voltage signal is lower, and when the potential of FD is higher, the voltage value of the second output voltage signal is higher); according to the difference value between the voltage value of the second output voltage signal and the voltage value of the second reference voltage signal, the illumination intensity of the optical signal sensed by the PD2 can be obtained;
In the third reset period S31, CR supplies a high voltage signal to reset the potential of FD;
in the third first reading period S32, the potential control T2 of FD is turned on to output a third reference voltage signal through the transfer output terminal;
in the third transfer period S33, TG3 provides a high voltage signal, and T1-3 is turned on to transfer the third charge signal converted by PD3 to FD to change the potential of FD (the higher the illumination intensity of the optical signal sensed by PD3, the higher the degree of potential drop of FD, the lower the potential of FD, the lower the illumination intensity of the optical signal sensed by PD3, the lower the degree of potential drop of FD, the higher the potential of FD);
in the third transfer period S33, TG1, TG2 and TG4 all supply low voltage signals, T1-1, T1-2 and T1-4 all turn off;
in the third second reading period S34, TG3 provides a low voltage signal, and T1-3 is turned off; due to the gate-source parasitic capacitance Cgs3 of T1-3, the potential of FD is correspondingly reduced, where T2 works in the saturation region, the potential of FD is related to the turn-on level of T2 (when the potential of FD is lower, the turn-on level of T2 is lower, and when the potential of FD is higher, the turn-on level of T2 is higher), and a third output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, the voltage value of the third output voltage signal is related to the potential of FD (when the potential of FD is lower, the voltage value of the third output voltage signal is lower, and when the potential of FD is higher, the voltage value of the third output voltage signal is higher); according to the difference value between the voltage value of the third output voltage signal and the voltage value of the third reference voltage signal, the illumination intensity of the optical signal sensed by the PD3 can be obtained;
In the fourth reset period S41, CR supplies a high voltage signal to reset the potential of FD;
in the fourth first reading period S42, the potential control T2 of FD is turned on to output the fourth reference voltage signal through the transfer output terminal;
in the fourth transfer period S43, TG4 provides a high voltage signal, T1-4 is turned on to transfer the fourth charge signal converted by PD4 to FD to change the potential of FD (the higher the illumination intensity of the optical signal sensed by PD4, the higher the degree of potential drop of FD, the lower the potential of FD, the lower the illumination intensity of the optical signal sensed by PD4, the lower the degree of potential drop of FD, the higher the potential of FD);
in the fourth transfer period S43, TG1, TG2 and TG3 all supply low voltage signals, T1-1, T1-2 and T1-3 all turn off;
in the fourth second reading period S44, TG4 provides a low voltage signal, and T1-4 is turned off; due to the gate-source parasitic capacitance Cgs4 of T1-4, the potential of FD is correspondingly reduced, where T2 works in the saturation region, the potential of FD is related to the turn-on level of T2 (when the potential of FD is lower, the turn-on level of T2 is lower, and when the potential of FD is higher, the turn-on level of T2 is higher), and a fourth output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, where the voltage value of the fourth output voltage signal is related to the potential of FD (when the potential of FD is lower, the voltage value of the fourth output voltage signal is lower, and when the potential of FD is higher, the voltage value of the fourth output voltage signal is higher); and according to the difference value between the voltage value of the fourth output voltage signal and the voltage value of the fourth reference voltage signal, the illumination intensity of the optical signal sensed by the PD4 can be obtained.
The photosensitive control method is applied to the photosensitive circuit, the photosensitive period comprises N photosensitive stages which are sequentially arranged, and the nth photosensitive stage comprises an nth reset time period, an nth first reading time period, an nth transfer time period and an nth second reading time period which are sequentially arranged; the photosensitive control method comprises the following steps:
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by a reset reading line;
in the nth first reading period, the conversion circuit controls the output of a corresponding reference voltage signal through the conversion output terminal under the control of the potential of the conversion control terminal; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of the nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end, so that the potential of the conversion control end is changed;
An nth second reading time period, wherein the conversion circuit controls the output of a corresponding output voltage signal through the conversion output end under the control of the potential of the conversion control end; the read control circuit controls the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by the read control line; and obtaining the illumination intensity of the light signal according to the output voltage signal and the reference voltage signal.
The photosensitive module of the embodiment of the invention comprises a plurality of rows and a plurality of columns of the photosensitive circuits.
In at least one embodiment of the present invention, two adjacent columns of photosensitive circuits are electrically connected to a first voltage line of the same column, and the two adjacent columns of photosensitive circuits are disposed in mirror images on two sides of the first voltage line.
Fig. 4 shows two rows and two columns of photosensitive circuits included in a photosensitive module according to at least one embodiment of the invention.
In fig. 4, a first transfer control line denoted by TG1, a second transfer control line denoted by TG2, a third transfer control line denoted by TG3, a fourth transfer control line denoted by TG4, a fifth transfer control line denoted by TG5, a sixth transfer control line denoted by TG6, a seventh transfer control line denoted by TG7, and an eighth transfer control line denoted by TG 8;
In fig. 4, a first photodiode included in the first-row first-column photosensitive circuit is denoted by a reference numeral PD11, a second photodiode included in the first-row first-column photosensitive circuit is denoted by a reference numeral PD12, a third photodiode included in the first-row first-column photosensitive circuit is denoted by a reference numeral PD13, and a fourth photodiode included in the first-row first-column photosensitive circuit is denoted by a reference numeral PD 14; a first photodiode included in the first-row second-column photosensitive circuit denoted by PD21, a second photodiode included in the first-row second-column photosensitive circuit denoted by PD22, a third photodiode included in the first-row second-column photosensitive circuit denoted by PD23, and a fourth photodiode included in the first-row second-column photosensitive circuit denoted by PD 24; a first photodiode included in the second-row first-column photosensitive circuit denoted by the reference numeral PD31, a second photodiode included in the second-row first-column photosensitive circuit denoted by the reference numeral PD32, a third photodiode included in the second-row first-column photosensitive circuit denoted by the reference numeral PD33, and a fourth photodiode included in the second-row first-column photosensitive circuit denoted by the reference numeral PD 34; a first photodiode included in the second-row and second-column photosensitive circuit denoted by PD41, a second photodiode included in the second-row and second-column photosensitive circuit denoted by PD42, a third photodiode included in the second-row and second-column photosensitive circuit denoted by PD43, and a fourth photodiode included in the second-row and second-column photosensitive circuit denoted by PD 44;
In fig. 4, reference numeral T11-1 is a first transistor included in the first-row first-column photosensitive circuit, T11-2 is a second first transistor included in the first-row first-column photosensitive circuit, reference numeral T11-3 is a third first transistor included in the first-row first-column photosensitive circuit, and T11-4 is a fourth first transistor included in the first-row first-column photosensitive circuit; a second transistor included in the first-row first-column photosensitive circuit denoted by T12, a third transistor included in the first-row first-column photosensitive circuit denoted by T13, and a fourth transistor included in the first-row first-column photosensitive circuit denoted by T14; the reference number FD1-1 is a first conversion control end;
the reference number T21-1 is a first transistor included in the first row and second column photosensitive circuits, the reference number T21-2 is a second first transistor included in the first row and second column photosensitive circuits, the reference number T21-3 is a third first transistor included in the first row and second column photosensitive circuits, and the reference number T21-4 is a fourth first transistor included in the first row and second column photosensitive circuits; a second transistor included in the first-row second-column photosensitive circuit denoted by T22, a third transistor included in the first-row second-column photosensitive circuit denoted by T23, and a fourth transistor included in the first-row second-column photosensitive circuit denoted by T24; the reference number FD1-2 is a second conversion control terminal;
The reference number T31-1 is a first transistor included in the second row first column photosensitive circuit, the reference number T31-2 is a second first transistor included in the second row first column photosensitive circuit, the reference number T31-3 is a third first transistor included in the second row first column photosensitive circuit, and the reference number T31-4 is a fourth first transistor included in the second row first column photosensitive circuit; a second transistor included in the second-row first-column photosensitive circuit denoted by T32, a third transistor included in the second-row first-column photosensitive circuit denoted by T33, and a fourth transistor included in the second-row first-column photosensitive circuit denoted by T34; the reference number FD1-3 is a third conversion control terminal;
the first transistor of the second row and second column light sensing circuit is denoted by T41-1, the second first transistor of the second row and second column light sensing circuit is denoted by T41-2, the third first transistor of the second row and second column light sensing circuit is denoted by T41-3, and the fourth first transistor of the second row and second column light sensing circuit is denoted by T41-4; a second transistor included in the second-row second-column photosensitive circuit denoted by T42, a third transistor included in the second-row second-column photosensitive circuit denoted by T43, and a fourth transistor included in the second-row second-column photosensitive circuit denoted by T44; the reference numbers FD1-4 are fourth conversion control ends;
A first read control line labeled SEL1 and a second read control line labeled SEL 2;
a first reset read line denoted by CR1, a second reset read line denoted by CR2, and a high voltage line denoted by Vd;
the first row and first column photosensitive circuits and the first row and second column photosensitive circuits are arranged on two sides of the high voltage line Vd in a mirror image mode;
the second row first column photosensitive circuits and the second row second column photosensitive circuits are arranged on two sides of the high voltage line Vd in a mirror image mode.
In at least one embodiment as shown in fig. 4, each photo-sensing circuit is provided with four photo-sensing units, and the four photo-sensing units can save 9 transistors by multiplexing the second transistor, the third transistor and the fourth transistor in a time-division manner;
in terms of walking lines, each photosensitive circuit is electrically connected with four rows of transfer control lines respectively, but only one row of read control lines is needed due to multiplexing transistors, so that 5 walking lines are needed for each photosensitive circuit; in the aspect of column wiring, since reset and reading are multiplexed by a reset reading line and only one high voltage line is needed, each photosensitive circuit only needs to adopt two column wirings; in summary, each photosensitive circuit can save 4 wiring lines.
And, as shown in fig. 4, the first row and first column photosensitive circuits and the first row and second column photosensitive circuits are disposed at both sides of the high voltage line Vd in a mirror image manner; the second row first column photosensitive circuits and the second row second column photosensitive circuits are arranged on two sides of the high voltage line Vd in a mirror image mode; in this way, in the two-row and two-column photosensitive circuits, the number of column wirings can be saved from 8 to 3.
The display device provided by the embodiment of the invention comprises a display panel and the photosensitive module;
the photosensitive module is arranged in the peripheral area of the display panel.
In a specific implementation, the photosensitive module may be disposed on at least one of the left side, the right side, the upper side, and the lower side of the display panel.
The display device according to at least one embodiment of the present invention may be a silicon-based display device, but is not limited thereto.
The display device provided by the embodiment of the invention can be any product or component with a display function, such as a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (9)
1. The photosensitive module is characterized by comprising a plurality of rows and columns of photosensitive circuits, wherein the photosensitive circuits comprise N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit and a reading control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N;
the n-th photosensitive element is used for sensing optical signals, converting the optical signals into corresponding charge signals and outputting the charge signals through an output end of the n-th photosensitive element;
the n-th transfer control circuit is respectively and electrically connected with the n-th transfer control line, the output end of the n-th photosensitive element and the conversion control end and is used for controlling the communication between the output end of the n-th photosensitive element and the conversion control end under the control of an n-th transfer control signal provided by the n-th transfer control line;
the reset circuit is electrically connected with the reset reading line and the conversion control end and is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
the conversion circuit is respectively and electrically connected with the conversion control end, the first voltage line and the conversion output end and is used for controlling the conversion output end to output corresponding output voltage signals under the control of the potential of the conversion control end;
The reading control circuit is respectively and electrically connected with the reading control line, the conversion output end and the reset reading line and is used for controlling the output voltage signal to be transmitted to the reset reading line under the control of a reading control signal provided by the reading control line;
adjacent two columns of photosensitive circuits are electrically connected with a first voltage line of the same column, and the adjacent two columns of photosensitive circuits are arranged on two sides of the first voltage line in a mirror image mode;
the sensitization period comprises N sensitization stages which are sequentially arranged, and the nth sensitization stage comprises an nth reset time period, an nth first reading time period, an nth transfer time period and an nth second reading time period which are sequentially arranged;
the nth photosensitive element is used for sensing an optical signal in the photosensitive period and converting the optical signal into a corresponding charge signal;
the reset circuit is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line in an nth reset time period;
the conversion circuit is used for controlling the output of a corresponding reference voltage signal through the conversion output end under the control of the potential of the conversion control end in the nth first reading time period;
The reading control circuit is used for controlling the reference voltage signal to be transmitted to the reset reading line under the control of the reading control signal in the nth first reading time period;
the n-th transfer control circuit is used for controlling the communication between the output end of the n-th photosensitive element and the conversion control end under the control of the n-th transfer control signal provided by the n-th transfer control line in the n-th transfer time period so as to transfer the corresponding charge signal output by the n-th photosensitive element through the output end of the n-th photosensitive element to the conversion control end, so that the potential of the conversion control end is changed;
the conversion circuit is used for controlling the output of a corresponding output voltage signal through the conversion output end under the control of the potential of the conversion control end in the nth second reading time period;
the reading control circuit is used for controlling the output voltage signal to be transmitted to the reset reading line under the control of a reading control signal provided by the reading control line in an nth second reading time period;
and obtaining the illumination intensity of the light signal according to the output voltage signal and the reference voltage signal.
2. The photosensitive module of claim 1, wherein the light signal is an infrared light signal or an ambient light signal.
3. The photosensitive module of claim 1, wherein the nth photosensitive element is an nth photodiode;
the anode of the nth photodiode is electrically connected with the second voltage end, and the cathode of the nth photodiode is the output end of the nth photosensitive element;
the nth photodiode is used for sensing an infrared light signal or an ambient light signal.
4. A photosensitive module as claimed in any one of claims 1 to 3, wherein the nth transfer control circuit comprises an nth first transistor;
the control electrode of the nth first transistor is electrically connected with the nth transfer control line, the first electrode of the nth first transistor is electrically connected with the output end of the nth photosensitive element, and the second electrode of the nth first transistor is electrically connected with the conversion control end.
5. A photosensitive module as claimed in any one of claims 1 to 3, wherein said conversion circuit comprises a second transistor;
the control electrode of the second transistor is electrically connected with the conversion control end, the first electrode of the second transistor is electrically connected with the first voltage line, and the second electrode of the second transistor is electrically connected with the conversion output end.
6. A photosensitive module as claimed in any one of claims 1 to 3, wherein said read control circuit comprises a third transistor;
the control electrode of the third transistor is electrically connected to the read control line, the first electrode of the third transistor is electrically connected to the conversion output terminal, and the second electrode of the third transistor is electrically connected to the reset read line.
7. A photosensitive module as claimed in any one of claims 1 to 3, wherein said reset circuit comprises a fourth transistor;
the control electrode of the fourth transistor and the first electrode of the fourth transistor are electrically connected with the reset reading line, and the second electrode of the fourth transistor is electrically connected with the conversion control end.
8. A photosensitive control method applied to the photosensitive module according to any one of claims 1 to 7, wherein a photosensitive period comprises N photosensitive stages which are sequentially arranged, and an nth photosensitive stage comprises an nth reset time period, an nth first reading time period, an nth transfer time period and an nth second reading time period which are sequentially arranged; the photosensitive control method comprises the following steps:
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
In the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by a reset reading line;
in the nth first reading period, the conversion circuit controls the output of a corresponding reference voltage signal through the conversion output terminal under the control of the potential of the conversion control terminal; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of the nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end, so that the potential of the conversion control end is changed;
an nth second reading time period, wherein the conversion circuit controls the output of a corresponding output voltage signal through the conversion output end under the control of the potential of the conversion control end; the read control circuit controls the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by a read control line; and obtaining the illumination intensity of the light signal according to the output voltage signal and the reference voltage signal.
9. A display device comprising a display panel and the photosensitive module according to any one of claims 1 to 7;
the photosensitive module is arranged in the peripheral area of the display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111648918.3A CN114295205B (en) | 2021-12-30 | 2021-12-30 | Photosensitive circuit, photosensitive control method, photosensitive module and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111648918.3A CN114295205B (en) | 2021-12-30 | 2021-12-30 | Photosensitive circuit, photosensitive control method, photosensitive module and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114295205A CN114295205A (en) | 2022-04-08 |
| CN114295205B true CN114295205B (en) | 2023-11-24 |
Family
ID=80973011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111648918.3A Active CN114295205B (en) | 2021-12-30 | 2021-12-30 | Photosensitive circuit, photosensitive control method, photosensitive module and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114295205B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180949A (en) * | 2005-12-28 | 2007-07-12 | Konica Minolta Holdings Inc | Solid-state imaging device |
| CN101101911A (en) * | 2006-07-06 | 2008-01-09 | 株式会社理光 | Temperature detecting method, temperature detecting circuit and semiconductor device |
| CN201255663Y (en) * | 2008-09-26 | 2009-06-10 | 中国科学院西安光学精密机械研究所 | Intelligent visible light sensor |
| CN101989152A (en) * | 2009-07-29 | 2011-03-23 | 瀚宇彩晶股份有限公司 | Embedded optical induction input device and method |
| CN103051846A (en) * | 2011-10-11 | 2013-04-17 | 全视科技有限公司 | Multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination |
| CN207232950U (en) * | 2017-07-19 | 2018-04-13 | 重庆蓝岸通讯技术有限公司 | Time-sharing multiplex is connected in series circuit |
| JP2018098772A (en) * | 2016-12-13 | 2018-06-21 | ソニーセミコンダクタソリューションズ株式会社 | Image pickup device and electronic device |
| CN112532898A (en) * | 2020-12-03 | 2021-03-19 | 北京灵汐科技有限公司 | Bimodal infrared bionic vision sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005026751A1 (en) * | 2003-09-05 | 2005-03-24 | Blake James N | Time division multiplexed optical measuring system |
| US9247170B2 (en) * | 2012-09-20 | 2016-01-26 | Semiconductor Components Industries, Llc | Triple conversion gain image sensor pixels |
| WO2020139505A2 (en) * | 2018-12-26 | 2020-07-02 | Apple Inc. | Optical-fingerprint detection system |
-
2021
- 2021-12-30 CN CN202111648918.3A patent/CN114295205B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180949A (en) * | 2005-12-28 | 2007-07-12 | Konica Minolta Holdings Inc | Solid-state imaging device |
| CN101101911A (en) * | 2006-07-06 | 2008-01-09 | 株式会社理光 | Temperature detecting method, temperature detecting circuit and semiconductor device |
| CN201255663Y (en) * | 2008-09-26 | 2009-06-10 | 中国科学院西安光学精密机械研究所 | Intelligent visible light sensor |
| CN101989152A (en) * | 2009-07-29 | 2011-03-23 | 瀚宇彩晶股份有限公司 | Embedded optical induction input device and method |
| CN103051846A (en) * | 2011-10-11 | 2013-04-17 | 全视科技有限公司 | Multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination |
| JP2018098772A (en) * | 2016-12-13 | 2018-06-21 | ソニーセミコンダクタソリューションズ株式会社 | Image pickup device and electronic device |
| CN207232950U (en) * | 2017-07-19 | 2018-04-13 | 重庆蓝岸通讯技术有限公司 | Time-sharing multiplex is connected in series circuit |
| CN112532898A (en) * | 2020-12-03 | 2021-03-19 | 北京灵汐科技有限公司 | Bimodal infrared bionic vision sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114295205A (en) | 2022-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10389958B2 (en) | Signal processing device, controlling method, image sensing device, and electronic device | |
| Aw et al. | A 128/spl times/128-pixel standard-cmos image sensor with electronic shutter | |
| TW201911855A (en) | Detection circuit of photo sensor with stacked substrates | |
| US10805565B2 (en) | CMOS image sensor, pixel circuit and driving method thereof | |
| KR102211899B1 (en) | Solid-state imaging element, and imaging device | |
| KR20160040139A (en) | Imaging device and electronic device | |
| JP2010011224A (en) | Solid-state imaging apparatus | |
| WO2014196433A1 (en) | Solid state imaging apparatus | |
| US20180295303A1 (en) | Imaging element | |
| KR20160040173A (en) | Conversion device, imaging device, electronic device, and conversion method | |
| CN108777772B (en) | Image sensor | |
| JP2011135515A (en) | Solid-state imaging apparatus | |
| CN109327666B (en) | Pixel sensing circuit, driving method thereof, image sensor and electronic equipment | |
| US8367998B2 (en) | Image sensor having a charge pump circuit and a drive transistor | |
| US10873716B2 (en) | Dual row control signal circuit for reduced image sensor shading | |
| CN110460786B (en) | Pixel sensing circuit, first bias voltage determining method and electronic equipment | |
| JP2018011272A (en) | Solid-state imaging device, driving method for solid-state imaging device, and electronic apparatus | |
| US7196726B2 (en) | CMOS sensor circuit having a voltage control circuit controlling a gate potential of a photodiode reset transistor to a potential other than power source potentials | |
| CN114295205B (en) | Photosensitive circuit, photosensitive control method, photosensitive module and display device | |
| JP5363237B2 (en) | Photoelectric conversion circuit and photoelectric conversion element used therefor | |
| JP2008124229A (en) | Solid-state imaging element | |
| WO2018082563A1 (en) | Driver circuit, driving method, active pixel sensor, image sensor, and electronic device | |
| TW202215838A (en) | Image sensor with configurable pixel circuit and method | |
| CN114500893B (en) | Image sensor, control method thereof and display panel | |
| US20210075984A1 (en) | Imaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |