CN114295205A - Photosensitive circuit, photosensitive control method, photosensitive module and display device - Google Patents
Photosensitive circuit, photosensitive control method, photosensitive module and display device Download PDFInfo
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- CN114295205A CN114295205A CN202111648918.3A CN202111648918A CN114295205A CN 114295205 A CN114295205 A CN 114295205A CN 202111648918 A CN202111648918 A CN 202111648918A CN 114295205 A CN114295205 A CN 114295205A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 162
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- 206010070834 Sensitisation Diseases 0.000 description 12
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- 230000003071 parasitic effect Effects 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 230000036211 photosensitivity Effects 0.000 description 1
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Abstract
The invention provides a photosensitive circuit, a photosensitive control method, a photosensitive module and a display device. The photosensitive circuit comprises N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit and a reading control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N; the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of the nth transfer control signal; the conversion circuit controls the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end; the read control circuit controls the output voltage signal to be transmitted to the reset read line under the control of the read control signal. The invention improves the photosensitive area and the photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of sensitization, in particular to a sensitization circuit, a sensitization control method, a sensitization module and a display device.
Background
The number of transistors and signal lines adopted by the related photosensitive circuit is large, so that the photosensitive area is small, and the photoelectric conversion efficiency is low in a weak photosensitive environment.
Disclosure of Invention
The invention mainly aims to provide a photosensitive circuit, a photosensitive control method, a photosensitive module and a display device, and solves the problems that the conventional photosensitive circuit is small in photosensitive area and low in photoelectric conversion efficiency.
In order to achieve the above object, an embodiment of the present invention provides a photosensitive circuit, which includes N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit, and a read control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N;
the nth photosensitive element is used for sensing an optical signal, converting the optical signal into a corresponding charge signal and outputting the charge signal through the output end of the nth photosensitive element;
the nth transfer control circuit is respectively electrically connected with the nth transfer control line, the output end of the nth photosensitive element and the conversion control end and is used for controlling the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line;
the reset circuit is electrically connected with the reset reading line and the conversion control end and is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
the conversion circuit is respectively electrically connected with the conversion control end, the first voltage wire and the conversion output end and is used for controlling the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end;
the read control circuit is electrically connected with a read control line, the conversion output end and the reset read line respectively, and is used for controlling the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by the read control line.
Optionally, the optical signal is an infrared optical signal or an ambient optical signal.
Optionally, the nth photosensitive element is an nth photodiode;
the anode of the nth photodiode is electrically connected with a second voltage end, and the cathode of the nth photodiode is the output end of the nth photosensitive element;
the nth photodiode is used for sensing an infrared light signal or an ambient light signal.
Optionally, the nth transfer control circuit includes an nth first transistor;
the control electrode of the nth first transistor is electrically connected with the nth transfer control line, the first electrode of the nth first transistor is electrically connected with the output end of the nth photosensitive element, and the second electrode of the nth first transistor is electrically connected with the conversion control end.
Optionally, the conversion circuit includes a second transistor;
the control electrode of the second transistor is electrically connected with the conversion control end, the first electrode of the second transistor is electrically connected with the first voltage line, and the second electrode of the second transistor is electrically connected with the conversion output end.
Optionally, the read control circuit includes a third transistor;
a control electrode of the third transistor is electrically connected to the read control line, a first electrode of the third transistor is electrically connected to the conversion output terminal, and a second electrode of the third transistor is electrically connected to the reset read line.
Optionally, the reset circuit includes a fourth transistor;
a control electrode of the fourth transistor and a first electrode of the fourth transistor are electrically connected to the reset readout line, and a second electrode of the fourth transistor is electrically connected to the conversion control terminal.
The embodiment of the invention provides a photosensitive control method, which is applied to the photosensitive circuit, wherein a photosensitive cycle comprises N photosensitive stages which are sequentially arranged, and an nth photosensitive stage comprises an nth resetting time period, an nth first reading time period, an nth transferring time period and an nth second reading time period which are sequentially arranged; the photosensitive control method comprises the following steps:
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
in the nth first reading time period, the conversion circuit controls the output of a corresponding reference voltage signal through a conversion output end under the control of the potential of the conversion control end; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer time period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end to change the potential of the conversion control end;
in the nth second reading time period, the conversion circuit controls the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end; the reading control circuit controls to transmit the output voltage signal to the reset reading line under the control of a reading control signal provided by a reading control line; and obtaining the illumination intensity of the optical signal according to the output voltage signal and the reference voltage signal.
The embodiment of the invention provides a photosensitive module, which comprises a plurality of rows and a plurality of columns of the photosensitive circuit.
Optionally, two adjacent columns of photosensitive circuits are electrically connected to the same column of first voltage line, and two adjacent columns of photosensitive circuits are arranged on two sides of the first voltage line in a mirror image manner.
The embodiment of the invention provides a display device, which comprises a display panel and the photosensitive module;
the photosensitive module is arranged in the peripheral area of the display panel.
The photosensitive circuit, the photosensitive control method, the photosensitive module and the display device of the embodiment of the invention share the reset circuit, the conversion circuit and the reading control circuit through the N photosensitive units, so that the number of adopted photosensitive elements is ensured, the number of adopted transistors is reduced, the number of adopted signal lines is reduced, the photosensitive area is increased, and the photoelectric conversion efficiency is improved.
Drawings
FIG. 1 is a block diagram of a photosensitive circuit according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a photosensitive circuit according to at least one embodiment of the present disclosure;
FIG. 3 is a timing diagram illustrating operation of the photosensitive circuit shown in FIG. 2 according to at least one embodiment of the present invention;
fig. 4 is a circuit diagram of two rows and two columns of photosensitive circuits included in the photosensitive module according to at least one embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The transistors used in all embodiments of the present invention may be transistors, thin film transistors, or field effect transistors or other devices with the same characteristics. In the embodiment of the present invention, in order to distinguish two poles of the transistor except the control pole, one pole is called a first pole, and the other pole is called a second pole.
In practical operation, when the transistor is a thin film transistor or a field effect transistor, the first electrode may be a drain electrode, and the second electrode may be a source electrode; alternatively, the first pole may be a source and the second pole may be a drain.
The photosensitive circuit comprises N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit and a reading control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N;
the nth photosensitive element is used for sensing an optical signal, converting the optical signal into a corresponding charge signal and outputting the charge signal through the output end of the nth photosensitive element;
the nth transfer control circuit is respectively electrically connected with the nth transfer control line, the output end of the nth photosensitive element and the conversion control end and is used for controlling the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line;
the reset circuit is electrically connected with the reset reading line and the conversion control end and is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
the conversion circuit is respectively electrically connected with the conversion control end, the first voltage wire and the conversion output end and is used for controlling the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end;
the read control circuit is electrically connected with a read control line, the conversion output end and the reset read line respectively, and is used for controlling the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by the read control line.
In the photosensitive circuit according to the embodiment of the invention, the reset circuit, the conversion circuit and the read control circuit are shared by the N photosensitive units, so that the number of the adopted photosensitive elements is ensured, the number of the adopted transistors is reduced, the number of the adopted signal lines is reduced, the photosensitive area is increased, and the photoelectric conversion efficiency is improved.
In the embodiment of the invention, the multiplexing reset reading line is used for reset control and signal reading, and the number of the adopted signal lines is reduced.
When the photosensitive circuit works, a photosensitive cycle can comprise N photosensitive stages which are sequentially arranged, wherein the nth photosensitive stage comprises an nth reset time period, an nth first reading time period, an nth transfer time period and an nth second reading time period which are sequentially arranged;
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
in the nth first reading time period, the conversion circuit controls the conversion output end to output a corresponding reference voltage signal under the control of the potential of the conversion control end; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer time period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end to change the potential of the conversion control end;
in the nth second reading time period, the conversion circuit controls the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end; the reading control circuit controls to transmit the output voltage signal to the reset reading line under the control of a reading control signal provided by a reading control line; and obtaining the illumination intensity of the optical signal according to the output voltage signal and the reference voltage signal.
In specific implementation, the illumination intensity of the optical signal can be obtained according to the voltage value of the output voltage signal and the voltage value of the reference voltage signal.
In at least one embodiment of the present invention, the optical signal is an infrared optical signal or an ambient optical signal.
In the related art, in a silicon-based display panel integrated with an infrared sensor circuit, the tracking recognition of the eyeball may be performed by an infrared sensor device disposed in a peripheral area of the display panel. However, because the traditional photosensitive circuit has a low photosensitivity, the photo-generated current is low under the condition that the luminous flux is low after infrared light is reflected by eyeballs. The related photosensitive circuit comprises a photosensitive device and four transistors, the four photosensitive circuits need to be electrically connected with six rows of control lines and four columns of signal lines, the number of the transistors and the number of the signal lines adopted by the related photosensitive circuit are large, the photosensitive area is small, and the photoelectric conversion efficiency is low in a weak photosensitive environment. Based on this, the photosensitive circuit described in the embodiment of the present invention uses N photosensitive units to share the reset circuit, the conversion circuit, and the read control circuit, so as to reduce the number of transistors and the number of signal lines while ensuring the number of photosensitive elements used, thereby increasing the photosensitive area and improving the photoelectric conversion efficiency.
In at least one embodiment of the present invention, N is equal to 4 for illustration, but not limited thereto. In practical operation, N may be an integer greater than 1.
As shown in fig. 1, the photosensitive circuit according to at least one embodiment of the present invention includes a first photosensitive element 11, a second photosensitive element 12, a third photosensitive element 13, a fourth photosensitive element 14, a first transfer control circuit 21, a second transfer control circuit 22, a third transfer control circuit 23, a fourth transfer control circuit 24, a reset circuit 31, a conversion circuit 32, and a read control circuit 33;
the first photosensitive element 11 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the first photosensitive element 11;
the second photosensitive element 12 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the second photosensitive element 12;
the third photosensitive element 13 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the third photosensitive element 13;
the fourth photosensitive element 14 is configured to sense an optical signal, convert the optical signal into a corresponding charge signal, and output the charge signal through an output end of the fourth photosensitive element 14;
the first transfer control circuit 21 is respectively electrically connected with a first transfer control line TG1, an output end of the first photosensitive element 11 and a conversion control end FD, and is used for controlling the communication between the output end of the first photosensitive element 11 and the conversion control end FD under the control of a first transfer control signal provided by the first transfer control line TG 1;
the reset circuit 31 is electrically connected to a reset readout line CR and the conversion control terminal FD, and is configured to reset the potential of the conversion control terminal FD under the control of a reset control signal provided by the reset readout line CR;
the conversion circuit 32 is electrically connected to the conversion control terminal FD, the first voltage line V1 and the conversion output terminal O1, respectively, and is configured to control output of a corresponding output voltage signal through the conversion output terminal O1 under control of a potential of the conversion control terminal FD;
the read control circuit 33 is electrically connected to a read control line SEL, the conversion output FD, and the reset read line CR, respectively, and controls the output voltage signal to be transmitted to the reset read line CR under the control of a read control signal provided by the read control line SEL.
In at least one embodiment of the present invention, the first voltage line may be a high voltage line, but is not limited thereto.
When at least one embodiment of the photosensitive circuit shown in fig. 1 works, a photosensitive cycle may include a first photosensitive stage, a second photosensitive stage, a third photosensitive stage, and a fourth photosensitive stage, which are sequentially arranged, where the first photosensitive stage includes a first reset time period, a first reading time period, a first transfer time period, and a first second reading time period, which are sequentially arranged; the second photosensitive stage comprises a second reset time period, a second first reading time period, a second transfer time period and a second reading time period which are sequentially arranged; the third photosensitive stage comprises a third reset time period, a third first reading time period, a third transfer time period and a third second reading time period which are sequentially arranged; the fourth photosensitive stage comprises a fourth reset time period, a fourth first reading time period, a fourth transfer time period and a fourth second reading time period which are sequentially arranged;
in the light sensing period, the first light sensing element 11 senses a light signal and converts the light signal into a corresponding charge signal, the second light sensing element 12 senses a light signal and converts the light signal into a corresponding charge signal, the third light sensing element 13 senses a light signal and converts the light signal into a corresponding charge signal, and the fourth light sensing element 14 senses a light signal and converts the light signal into a corresponding charge signal;
in the first reset period, the reset circuit 31 resets the potential of the conversion control terminal FD under the control of the reset control signal supplied from the reset readout line CR;
in the first reading period, the conversion circuit 32 controls the output of the first reference voltage signal through the conversion output terminal O1 under the control of the potential of the conversion control terminal FD; the read control circuit 33 controls the transfer of the first reference voltage signal to the reset read line CR under the control of a read control signal;
in the first transfer period, the first transfer control circuit 21 controls communication between the output terminal of the first photosensitive element 11 and the conversion control terminal FD under the control of a first transfer control signal supplied from a first transfer control line TG1 to transfer the corresponding charge signal output from the output terminal of the first photosensitive element 11 to the conversion control terminal FD to change the potential of the conversion control terminal FD;
in the first second reading period, the switching circuit 32 controls the output of the first output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the first output voltage signal to the reset read line CR under the control of a read control signal provided by the control line SEL; the illumination intensity of the optical signal sensed by the first photosensitive element 11 can be obtained according to the first output voltage signal and the first reference voltage signal;
in the second reset period, the reset circuit 31 resets the potential of the conversion control terminal FD under the control of the reset control signal supplied from the reset readout line CR;
in the second first reading period, the conversion circuit 32 controls the output of the second reference voltage signal through the conversion output terminal O1 under the control of the potential of the conversion control terminal FD; the read control circuit 33 controls the transfer of the second reference voltage signal to the reset read line CR under the control of a read control signal;
in the second transfer period, the second transfer control circuit 22 controls the communication between the output terminal of the second photosensitive element 12 and the conversion control terminal FD under the control of the second transfer control signal supplied by the second transfer control line TG2 to transfer the corresponding charge signal output from the output terminal of the second photosensitive element 12 to the conversion control terminal FD to change the potential of the conversion control terminal FD;
in the second reading period, the switching circuit 32 controls to output the second output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the second output voltage signal to the reset read line CR under the control of a read control signal provided by the control line SEL; the illumination intensity of the optical signal sensed by the second photosensitive element 12 can be obtained according to the second output voltage signal and the second reference voltage signal;
in the third reset period, the reset circuit 31 resets the potential of the conversion control terminal FD under the control of the reset control signal supplied from the reset readout line CR;
in the third first reading period, the conversion circuit 32 controls the output of the third reference voltage signal through the conversion output terminal O1 under the control of the potential of the conversion control terminal FD; the read control circuit 33 controls the transfer of the third reference voltage signal to the reset read line CR under the control of a read control signal;
in a third transfer period, the third transfer control circuit 23 controls the communication between the output terminal of the third photosensitive element 13 and the conversion control terminal FD under the control of a third transfer control signal supplied by a third transfer control line TG3 to transfer the corresponding charge signal output from the output terminal of the third photosensitive element 12 to the conversion control terminal FD to change the potential of the conversion control terminal FD;
in the third second reading period, the switching circuit 32 controls the output of the third output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the third output voltage signal to the reset read line CR under the control of a read control signal provided by the control line SEL; the illumination intensity of the optical signal sensed by the third photosensitive element 13 can be obtained according to the third output voltage signal and the third reference voltage signal;
in the fourth reset period, the reset circuit 31 resets the potential of the conversion control terminal FD under the control of the reset control signal supplied from the reset readout line CR;
in the fourth first reading period, the conversion circuit 32 controls the output of the fourth reference voltage signal through the conversion output terminal O1 under the control of the potential of the conversion control terminal FD; the read control circuit 33 controls to transmit the fourth reference voltage signal to the reset read line CR under the control of a read control signal;
in the first transfer period, the fourth transfer control circuit 24 controls the communication between the output terminal of the fourth photosensitive element 14 and the conversion control terminal FD under the control of a fourth transfer control signal supplied from a fourth transfer control line TG4 to transfer the corresponding charge signal output from the output terminal of the fourth photosensitive element 14 to the conversion control terminal FD to change the potential of the conversion control terminal FD;
in the fourth second reading period, the switching circuit 32 controls the output of the fourth output voltage signal through the switching output terminal O1 under the control of the potential of the switching control terminal FD; the read control circuit 33 controls the transfer of the fourth output voltage signal to the reset read line CR under the control of a read control signal provided by the control line SEL; the illumination intensity of the optical signal sensed by the fourth photosensitive element 14 can be obtained according to the fourth output voltage signal and the fourth reference voltage signal.
When at least one embodiment of the photosensitive circuit shown in fig. 1 of the present invention is in operation, when the reset circuit 31 resets the potential of the conversion control terminal FD to the same reset voltage (the reset voltage can turn on the transistor included in the conversion circuit 32) in the first reset period, the second reset period, the third reset period, and the fourth reset period, the voltage value of the first reference voltage signal, the voltage value of the second reference voltage signal, the voltage value of the third reference voltage signal, and the voltage value of the fourth reference voltage signal may be the same.
Optionally, the nth photosensitive element is an nth photodiode;
the anode of the nth photodiode is electrically connected with a second voltage end, and the cathode of the nth photodiode is the output end of the nth photosensitive element;
the nth photodiode is used for sensing an infrared light signal or an ambient light signal.
In at least one embodiment of the present invention, the second voltage terminal may be a ground terminal or a low voltage terminal, but not limited thereto.
Optionally, the nth transfer control circuit includes an nth first transistor;
the control electrode of the nth first transistor is electrically connected with the nth transfer control line, the first electrode of the nth first transistor is electrically connected with the output end of the nth photosensitive element, and the second electrode of the nth first transistor is electrically connected with the conversion control end.
Optionally, the conversion circuit includes a second transistor;
the control electrode of the second transistor is electrically connected with the conversion control end, the first electrode of the second transistor is electrically connected with the first voltage line, and the second electrode of the second transistor is electrically connected with the conversion output end.
Optionally, the read control circuit includes a third transistor;
a control electrode of the third transistor is electrically connected to the read control line, a first electrode of the third transistor is electrically connected to the conversion output terminal, and a second electrode of the third transistor is electrically connected to the reset read line.
Optionally, the reset circuit includes a fourth transistor;
a control electrode of the fourth transistor and a first electrode of the fourth transistor are electrically connected to the reset readout line, and a second electrode of the fourth transistor is electrically connected to the conversion control terminal.
As shown in fig. 2, in at least one embodiment of the light sensing circuit shown in fig. 1, the first light sensing element is a first photodiode PD1, the second light sensing element is a second photodiode PD2, the third light sensing element is a third photodiode PD3, and the fourth light sensing element is a fourth photodiode PD 4;
the anode of the first photodiode PD1 is electrically connected with the ground terminal, and the cathode of the first photodiode PD1 is the output terminal of the first photosensitive element;
the anode of the second photodiode PD2 is electrically connected with the ground terminal, and the cathode of the second photodiode PD2 is the output terminal of the second photosensitive element;
the anode of the third photodiode PD3 is electrically connected with the ground terminal, and the cathode of the third photodiode PD3 is the output terminal of the third photosensitive element;
the anode of the fourth photodiode PD4 is electrically connected with the ground terminal, and the cathode of the fourth photodiode PD4 is the output terminal of the fourth photosensitive element;
the first photodiode PD1 is used for sensing infrared light signals, the second photodiode PD2 is used for sensing infrared light signals, the third photodiode PD3 is used for sensing infrared light signals, and the fourth photodiode PD4 is used for sensing infrared light signals;
the first transfer control circuit 21 includes a first transistor T1-1;
a gate of the first transistor T1-1 is electrically connected to the first transfer control line TG1, a source of the first transistor T1-1 is electrically connected to a cathode of the first photodiode PD1, and a drain of the first transistor T1-1 is electrically connected to the conversion control terminal FD;
the second transfer control circuit 22 includes a second first transistor T1-2;
a gate of the second first transistor T1-2 is electrically connected to the second transfer control line TG2, a source of the second first transistor T1-2 is electrically connected to a cathode of the second photodiode PD2, and a drain of the second first transistor T1-2 is electrically connected to the conversion control terminal FD;
the third transfer control circuit 23 includes a third first transistor T1-3;
a gate of the third first transistor T1-3 is electrically connected to the third transfer control line TG3, a source of the third first transistor T1-3 is electrically connected to a cathode of the third photodiode PD3, and a drain of the third first transistor T1-3 is electrically connected to the conversion control terminal FD;
the fourth transfer control circuit 24 includes a fourth first transistor T1-4;
a gate of the fourth first transistor T1-4 is electrically connected to the fourth transfer control line TG4, a source of the fourth first transistor T1-4 is electrically connected to a cathode of the fourth photodiode PD4, and a drain of the fourth first transistor T1-4 is electrically connected to the conversion control terminal FD;
the conversion circuit 32 includes a second transistor T2;
a gate of the second transistor T2 is electrically connected to the conversion control terminal FD, a drain of the second transistor T2 is electrically connected to a high voltage line Vd, and a source of the second transistor T2 is electrically connected to the conversion output terminal O1; the high voltage line Vd is used to supply a high voltage VDD;
the read control circuit 33 includes a third transistor T3;
a gate of the third transistor T3 is electrically connected to the read control line SEL, a source of the third transistor T3 is electrically connected to the conversion output terminal O1, and a drain of the third transistor T3 is electrically connected to the reset read line CR;
the reset circuit 31 includes a fourth transistor T4;
a gate of the fourth transistor T4 and a source of the fourth transistor T4 are electrically connected to the reset read line CR, and a drain of the fourth transistor T4 is electrically connected to the conversion control terminal FD.
In at least one embodiment of the photosensitive circuit shown in fig. 2, all the transistors are NMOS (N-type metal-oxide-semiconductor) transistors, but not limited thereto. In practical operation, the transistor may be a p-type transistor, and may also be another type of transistor (e.g., a thin film transistor), but is not limited thereto.
At least one embodiment of the light sensing circuit of the present invention as shown in FIG. 2 includes four photodiodes and seven transistors, and at least one embodiment of the light sensing circuit of the present invention as shown in FIG. 2 employs seven signal lines; compared with the related art, at least one embodiment of the light sensing circuit shown in fig. 2 of the present invention reduces the number of transistors and signal lines while ensuring the number of photodiodes to be used, and can increase the light sensing area and the photoelectric conversion efficiency by increasing the size of the photodiodes.
In a specific implementation, the photodiode is fabricated on the silicon substrate, and in at least one embodiment of the invention, the size of the photodiode can be made larger by reducing the space occupied by the transistor and the signal line, so as to increase the photosensitive area and further increase the photoelectric conversion efficiency.
As shown in fig. 3, when the at least one embodiment of the photosensitive circuit shown in fig. 2 of the present invention is in operation, the photosensitive cycle may include a first photosensitive stage S1, a second photosensitive stage S2, a third photosensitive stage S3, and a fourth photosensitive stage S4, where the first photosensitive stage S1 includes a first reset period S11, a first reading period S12, a first transfer period S13, and a first second reading period S14, which are sequentially arranged; the second light sensing stage S2 includes a second reset period S21, a second first reading period S22, a second transfer period S23, and a second reading period S24, which are sequentially set; the third photosensitive stage S3 includes a third reset period S31, a third first reading period S32, a third transfer period S33, and a third second reading period S34, which are sequentially set; the fourth photosensitive stage S4 includes a fourth reset period S41, a fourth first reading period S42, a fourth transfer period S43, and a fourth second reading period S44, which are sequentially set;
in the first sensitization stage S1, the second sensitization stage S2, the third sensitization stage S3 and the fourth sensitization stage S4, SEL provides a high voltage signal, and T3 is turned on to prepare for signal reading, so as to avoid signal noise caused by clock feed-through due to T3 being turned on in the signal reading process;
in the first sensitization stage S1, the second sensitization stage S2, the third sensitization stage S3 and the fourth sensitization stage S4, the PD1 induces an infrared light signal to obtain a corresponding first charge signal, the PD2 induces an infrared light signal to obtain a corresponding second charge signal, the PD3 induces an infrared light signal to obtain a corresponding third charge signal, and the PD4 induces an infrared light signal to obtain a corresponding fourth charge signal;
in the first reset period S11, CR supplies a high voltage signal to reset the potential of the FD; for example, CR may provide a high voltage VDD to reset the potential of FD to VDD-Vth, Vth being the threshold voltage of T4;
in the first read period S12, the potential control T2 of the FD is turned on to output the first reference voltage signal through the transfer output terminal O1;
in the first transfer period S13, the TG1 provides a high voltage signal, and the T1-1 is turned on to transfer the first charge signal converted by the PD1 to the FD to change the potential of the FD (the higher the light intensity of the light signal sensed by the PD1, the higher the degree of potential drop of the FD, the lower the potential of the FD, the lower the light intensity of the light signal sensed by the PD1, the lower the degree of potential drop of the FD, the higher the potential of the FD);
in the first transition period S13, TG2, TG3 and TG4 all provide low voltage signals, and T1-2, T1-3 and T1-4 are all turned off;
in the first second read period S14, the TG1 provides a low voltage signal, and T1-1 is turned off; the potential of the FD is also lowered correspondingly due to the gate-source parasitic capacitance Cgs1 of T1-1, when T2 operates in a saturation region, the potential of the FD is related to the on-level of T2 (the lower the potential of the FD, the lower the on-level of T2, and the higher the potential of the FD, the higher the on-level of T2), a first output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, the voltage value of the first output voltage signal is related to the potential of the FD (the lower the voltage value of the first output voltage signal is when the potential of the FD is lower; the voltage value of the first output voltage signal is higher when the potential of the FD is higher); according to the difference value between the voltage value of the first output voltage signal and the voltage value of the first reference voltage signal, the illumination intensity of the optical signal sensed by the PD1 can be obtained;
in the second reset period S21, CR supplies a high voltage signal to reset the potential of the FD;
in the second first read period S22, the potential control T2 of the FD is turned on to output the second reference voltage signal through the transfer output terminal;
in the second transfer period S23, the TG2 provides a high voltage signal, and the T1-2 is turned on to transfer the second charge signal converted by the PD2 to the FD to change the potential of the FD (the higher the light intensity of the light signal sensed by the PD2, the higher the degree of potential drop of the FD, the lower the potential of the FD, the lower the light intensity of the light signal sensed by the PD2, the lower the degree of potential drop of the FD, the higher the potential of the FD);
in the second transition period S23, the TG1, the TG3 and the TG4 all provide low voltage signals, and the T1-1, the T1-3 and the T1-4 are all turned off;
in the second read period S24, the TG2 provides a low voltage signal, and T1-2 is turned off; the potential of the FD is also lowered correspondingly due to the gate-source parasitic capacitance Cgs2 of T1-2, when T2 operates in a saturation region, the potential of the FD is related to the on-level of T2 (the lower the potential of the FD, the lower the on-level of T2, and the higher the potential of the FD, the higher the on-level of T2), a second output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, the voltage value of the second output voltage signal is related to the potential of the FD (the lower the voltage value of the second output voltage signal is when the potential of the FD is lower, the higher the voltage value of the second output voltage signal is when the potential of the FD is higher); according to the difference value between the voltage value of the second output voltage signal and the voltage value of the second reference voltage signal, the illumination intensity of the optical signal sensed by the PD2 can be obtained;
in the third reset period S31, CR supplies a high voltage signal to reset the potential of the FD;
in the third first read period S32, the potential control T2 of the FD is turned on to output a third reference voltage signal through the transfer output terminal;
in the third transfer period S33, the TG3 provides a high voltage signal, and the T1-3 is turned on to transfer the third charge signal converted by the PD3 to the FD to change the potential of the FD (the higher the light intensity of the light signal sensed by the PD3, the higher the degree of potential drop of the FD, the lower the potential of the FD, the lower the light intensity of the light signal sensed by the PD3, the lower the degree of potential drop of the FD, the higher the potential of the FD);
in the third transition period S33, TG1, TG2 and TG4 all provide low voltage signals, and T1-1, T1-2 and T1-4 are all turned off;
in the third second read period S34, the TG3 provides a low voltage signal, and T1-3 is off; the potential of the FD is also lowered correspondingly due to the gate-source parasitic capacitance Cgs3 of T1-3, when T2 operates in a saturation region, the potential of the FD is related to the on-level of T2 (the lower the potential of the FD, the lower the on-level of T2, and the higher the potential of the FD, the higher the on-level of T2), a third output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, the voltage value of the third output voltage signal is related to the potential of the FD (the lower the voltage value of the third output voltage signal is when the potential of the FD is lower; the voltage value of the third output voltage signal is higher when the potential of the FD is higher); according to the difference value between the voltage value of the third output voltage signal and the voltage value of the third reference voltage signal, the illumination intensity of the optical signal sensed by the PD3 can be obtained;
in the fourth reset period S41, CR supplies a high voltage signal to reset the potential of the FD;
in the fourth first read period S42, the potential control T2 of the FD is turned on to output a fourth reference voltage signal through the transfer output terminal;
in the fourth transfer period S43, the TG4 provides a high voltage signal, and the T1-4 is turned on to transfer the fourth charge signal converted by the PD4 to the FD to change the potential of the FD (the higher the light intensity of the light signal sensed by the PD4, the higher the degree of potential drop of the FD, the lower the potential of the FD, the lower the light intensity of the light signal sensed by the PD4, the lower the degree of potential drop of the FD, the higher the potential of the FD);
in the fourth transition period S43, TG1, TG2 and TG3 all provide low voltage signals, and T1-1, T1-2 and T1-3 all turn off;
in the fourth second read period S44, the TG4 provides a low voltage signal, and T1-4 is off; the potential of the FD is also lowered correspondingly due to the gate-source parasitic capacitance Cgs4 of T1-4, when T2 operates in a saturation region, the potential of the FD is related to the on-level of T2 (the lower the potential of the FD, the lower the on-level of T2, and the higher the potential of the FD, the higher the on-level of T2), a fourth output voltage signal is provided to the reset read line CR through O1 and the turned-on T3, the voltage value of the fourth output voltage signal is related to the potential of the FD (the lower the voltage value of the fourth output voltage signal is when the potential of the FD is lower; the higher the voltage value of the fourth output voltage signal is when the potential of the FD is higher); according to the difference between the voltage value of the fourth output voltage signal and the voltage value of the fourth reference voltage signal, the illumination intensity of the optical signal sensed by the PD4 can be obtained.
The photosensitive control method is applied to the photosensitive circuit, the photosensitive cycle comprises N photosensitive stages which are arranged in sequence, and the nth photosensitive stage comprises an nth reset time period, an nth first reading time period, an nth transfer time period and an nth second reading time period which are arranged in sequence; the photosensitive control method comprises the following steps:
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
in the nth first reading time period, the conversion circuit controls the output of a corresponding reference voltage signal through a conversion output end under the control of the potential of the conversion control end; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer time period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end to change the potential of the conversion control end;
in the nth second reading time period, the conversion circuit controls the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end; the reading control circuit controls the output voltage signal to be transmitted to the reset reading line under the control of a reading control signal provided by the reading control line; and obtaining the illumination intensity of the optical signal according to the output voltage signal and the reference voltage signal.
The photosensitive module provided by the embodiment of the invention comprises a plurality of rows and a plurality of columns of the photosensitive circuit.
In at least one embodiment of the present invention, two adjacent columns of the photosensitive circuits are electrically connected to the same column of the first voltage line, and the two adjacent columns of the photosensitive circuits are arranged on two sides of the first voltage line in a mirror image manner.
FIG. 4 illustrates two rows and two columns of photosensitive circuits included in the photosensitive module according to at least one embodiment of the present invention.
In fig. 4, a first transfer control line is denoted by TG1, a second transfer control line is denoted by TG2, a third transfer control line is denoted by TG3, a fourth transfer control line is denoted by TG4, a fifth transfer control line is denoted by TG5, a sixth transfer control line is denoted by TG6, a seventh transfer control line is denoted by TG7, and an eighth transfer control line is denoted by TG 8;
in fig. 4, a first photodiode included in a first row and first column photosensitive circuit denoted by PD11, a second photodiode included in a first row and first column photosensitive circuit denoted by PD12, a third photodiode included in a first row and first column photosensitive circuit denoted by PD13, and a fourth photodiode included in a first row and first column photosensitive circuit denoted by PD 14; a first photodiode designated as PD21 and included in the first-row second-column photosensitive circuit, a second photodiode designated as PD22 and included in the first-row second-column photosensitive circuit, a third photodiode designated as PD23 and included in the first-row second-column photosensitive circuit, and a fourth photodiode designated as PD24 and included in the first-row second-column photosensitive circuit; a first photodiode which is marked by PD31 and is included by the photosensitive circuit of the second row and the first column, a second photodiode which is marked by PD32 and is included by the photosensitive circuit of the second row and the first column, a third photodiode which is marked by PD33 and is included by the photosensitive circuit of the second row and the first column, and a fourth photodiode which is marked by PD34 and is included by the photosensitive circuit of the second row and the first column; a first photodiode designated as PD41 and included in the second row and second column photosensitive circuit, a second photodiode designated as PD42 and included in the second row and second column photosensitive circuit, a third photodiode designated as PD43 and included in the second row and second column photosensitive circuit, and a fourth photodiode designated as PD44 and included in the second row and second column photosensitive circuit;
in FIG. 4, reference numeral T11-1 is the first transistor included in the first row and first column of photo-sensing circuits, T11-2 is the second first transistor included in the first row and first column of photo-sensing circuits, reference numeral T11-3 is the third first transistor included in the first row and first column of photo-sensing circuits, and T11-4 is the fourth first transistor included in the first row and first column of photo-sensing circuits; a second transistor labeled T12 and included in the first row and first column photosensitive circuit, a third transistor labeled T13 and included in the first row and first column photosensitive circuit, and a fourth transistor labeled T14 and included in the first row and first column photosensitive circuit; the label FD1-1 is the first conversion control end;
a first transistor which is marked as T21-1 and is included by the first row and second column photosensitive circuit, a second first transistor which is marked as T21-2 and is included by the first row and second column photosensitive circuit, a third first transistor which is marked as T21-3 and is included by the first row and second column photosensitive circuit, and a fourth first transistor which is marked as T21-4 and is included by the first row and second column photosensitive circuit; a second transistor denoted by T22 and included in the first row and second column photo sensing circuit, a third transistor denoted by T23 and included in the first row and second column photo sensing circuit, and a fourth transistor denoted by T24 and included in the first row and second column photo sensing circuit; the label FD1-2 is the second conversion control end;
a first transistor which is contained in the photosensitive circuit in the first column and the second row is marked as T31-1, a second first transistor which is contained in the photosensitive circuit in the first column and the second row is marked as T31-2, a third first transistor which is contained in the photosensitive circuit in the first column and the second row is marked as T31-3, and a fourth first transistor which is contained in the photosensitive circuit in the first column and the second row is marked as T31-4; a second transistor labeled T32 and included in the second row and first column photosensitive circuit, a third transistor labeled T33 and included in the second row and first column photosensitive circuit, and a fourth transistor labeled T34 and included in the second row and first column photosensitive circuit; the label FD1-3 is the third conversion control end;
a first transistor which is included in the second row and second column photosensitive circuit and is marked as T41-1, a second first transistor which is included in the second row and second column photosensitive circuit and is marked as T41-2, a third first transistor which is included in the second row and second column photosensitive circuit and is marked as T41-3, and a fourth first transistor which is included in the second row and second column photosensitive circuit and is marked as T41-4; a second transistor labeled T42 and included in the second row and second column photosensitive circuit, a third transistor labeled T43 and included in the second row and second column photosensitive circuit, and a fourth transistor labeled T44 and included in the second row and second column photosensitive circuit; the label FD1-4 is the fourth conversion control end;
a first read control line denoted SEL1 and a second read control line denoted SEL 2;
a first reset read line labeled CR1, a second reset read line labeled CR2, and a high voltage line labeled Vd;
the first row and first column photosensitive circuits and the first row and second column photosensitive circuits are arranged on two sides of the high voltage wire Vd in a mirror image mode;
the first row and the first column of photosensitive circuits and the second row and the second column of photosensitive circuits are arranged on two sides of the high voltage wire Vd in a mirror image mode.
In at least one embodiment shown in fig. 4, each of the light sensing circuits has four light sensing units, and the four light sensing units can save 9 transistors by time-division multiplexing the second transistor, the third transistor and the fourth transistor;
in the aspect of row wiring, each photosensitive circuit is electrically connected with four rows of transfer control lines respectively, but only one row of reading control lines is needed due to multiplexing transistors, so that each photosensitive circuit needs to adopt 5 row wirings; in the aspect of column wiring, because the reset reading line is used for resetting and reading again and only one high-voltage line is needed, each photosensitive circuit only needs two column wirings; in summary, each photo sensor circuit can save 4 traces.
Moreover, as shown in fig. 4, the first row and first column photosensitive circuits and the first row and second column photosensitive circuits are arranged on two sides of the high voltage line Vd in a mirror image manner; the second row first column photosensitive circuit and the second row second column photosensitive circuit are arranged on two sides of the high voltage wire Vd in a mirror image mode; thus, in the two rows and two columns of photosensitive circuits, the number of the column wires can be saved from 8 to 3.
The display device comprises a display panel and the photosensitive module;
the photosensitive module is arranged in the peripheral area of the display panel.
In specific implementation, the photosensitive module can be disposed on at least one side of the left side, the right side, the upper side, and the lower side of the display panel.
The display device according to at least one embodiment of the present invention may be a silicon-based display device, but is not limited thereto.
The display device provided by the embodiment of the invention can be any product or component with a display function, such as a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (11)
1. A photosensitive circuit is characterized by comprising N photosensitive elements, N transfer control circuits, a reset circuit, a conversion circuit and a reading control circuit; n is an integer greater than 1; n is a positive integer less than or equal to N;
the nth photosensitive element is used for sensing an optical signal, converting the optical signal into a corresponding charge signal and outputting the charge signal through the output end of the nth photosensitive element;
the nth transfer control circuit is respectively electrically connected with the nth transfer control line, the output end of the nth photosensitive element and the conversion control end and is used for controlling the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line;
the reset circuit is electrically connected with the reset reading line and the conversion control end and is used for resetting the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
the conversion circuit is respectively electrically connected with the conversion control end, the first voltage wire and the conversion output end and is used for controlling the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end;
the read control circuit is electrically connected with a read control line, the conversion output end and the reset read line respectively, and is used for controlling the output voltage signal to be transmitted to the reset read line under the control of a read control signal provided by the read control line.
2. The light sensing circuit of claim 1, wherein the light signal is an infrared light signal or an ambient light signal.
3. The light sensing circuit of claim 1, wherein the nth light sensing element is an nth photodiode;
the anode of the nth photodiode is electrically connected with a second voltage end, and the cathode of the nth photodiode is the output end of the nth photosensitive element;
the nth photodiode is used for sensing an infrared light signal or an ambient light signal.
4. A light sensing circuit as claimed in any one of claims 1 to 3, wherein the nth transfer control circuit comprises an nth first transistor;
the control electrode of the nth first transistor is electrically connected with the nth transfer control line, the first electrode of the nth first transistor is electrically connected with the output end of the nth photosensitive element, and the second electrode of the nth first transistor is electrically connected with the conversion control end.
5. A light sensing circuit as claimed in any one of claims 1 to 3, wherein the conversion circuit comprises a second transistor;
the control electrode of the second transistor is electrically connected with the conversion control end, the first electrode of the second transistor is electrically connected with the first voltage line, and the second electrode of the second transistor is electrically connected with the conversion output end.
6. A light sensing circuit as claimed in any one of claims 1 to 3, wherein the read control circuit comprises a third transistor;
a control electrode of the third transistor is electrically connected to the read control line, a first electrode of the third transistor is electrically connected to the conversion output terminal, and a second electrode of the third transistor is electrically connected to the reset read line.
7. A light sensing circuit as claimed in any one of claims 1 to 3, wherein the reset circuit comprises a fourth transistor;
a control electrode of the fourth transistor and a first electrode of the fourth transistor are electrically connected to the reset readout line, and a second electrode of the fourth transistor is electrically connected to the conversion control terminal.
8. A photosensitive control method is applied to the photosensitive circuit as claimed in any one of claims 1 to 7, wherein the photosensitive cycle includes N photosensitive stages which are successively arranged, and the nth photosensitive stage includes an nth reset time period, an nth first reading time period, an nth transfer time period and an nth second reading time period which are successively arranged; the photosensitive control method comprises the following steps:
in the photosensitive period, the nth photosensitive element senses a light signal and converts the light signal into a corresponding charge signal;
in the nth reset time period, the reset circuit resets the potential of the conversion control end under the control of a reset control signal provided by the reset reading line;
in the nth first reading time period, the conversion circuit controls the output of a corresponding reference voltage signal through a conversion output end under the control of the potential of the conversion control end; the reading control circuit controls the reference voltage signal to be transmitted to the reset reading line under the control of a reading control signal;
in the nth transfer time period, the nth transfer control circuit controls the communication between the output end of the nth photosensitive element and the conversion control end under the control of an nth transfer control signal provided by the nth transfer control line so as to transfer the corresponding charge signal output by the nth photosensitive element through the output end of the nth photosensitive element to the conversion control end to change the potential of the conversion control end;
in the nth second reading time period, the conversion circuit controls the conversion output end to output a corresponding output voltage signal under the control of the potential of the conversion control end; the reading control circuit controls to transmit the output voltage signal to the reset reading line under the control of a reading control signal provided by a reading control line; and obtaining the illumination intensity of the optical signal according to the output voltage signal and the reference voltage signal.
9. A photosensitive module comprising a plurality of rows and columns of the photosensitive circuit of any one of claims 1 to 7.
10. The photosensitive module of claim 9, wherein two adjacent columns of photosensitive circuits are electrically connected to a same column of the first voltage line, and the two adjacent columns of photosensitive circuits are disposed on two sides of the first voltage line in a mirror image manner.
11. A display device comprising a display panel and the photosensitive module according to claim 9 or 10;
the photosensitive module is arranged in the peripheral area of the display panel.
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