CN114284126A - Reaction chamber cleaning method - Google Patents
Reaction chamber cleaning method Download PDFInfo
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- CN114284126A CN114284126A CN202111543131.0A CN202111543131A CN114284126A CN 114284126 A CN114284126 A CN 114284126A CN 202111543131 A CN202111543131 A CN 202111543131A CN 114284126 A CN114284126 A CN 114284126A
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Abstract
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for cleaning a reaction cavity. The reaction chamber is used for processing each batch of wafers, each batch of wafers comprises a plurality of groups of wafers, and each group of wafers comprises a plurality of wafers; the processing technology of the reaction cavity to each wafer in the same batch of wafers is the same, and the cleaning method of the reaction cavity comprises the following steps: before the processing technology is carried out on a batch of wafers, a polymer pretreatment technology is carried out on the reaction cavity, and polymers accumulated in the reaction cavity after the processing technology of the previous batch of wafers is finished are removed; before each wafer in a group of wafers is subjected to the treatment process, removing polymers accumulated in the reaction cavity after the front wafer treatment process is finished; and after all wafers in one group of wafers are subjected to the treatment process, removing polymers accumulated in the reaction chamber after the treatment process of all wafers in the previous group is finished, and pumping out the polymers falling in the reaction chamber.
Description
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for cleaning a reaction cavity.
Background
Defects (defects) are an important factor affecting the yield of wafer products, and particularly in some front-stage processes such as shallow trench isolation structure etching or polysilicon etching, the wafer defects may cause the pattern not to be completely and correctly transferred to the target layer, thereby adversely affecting the electrical property and yield of the products.
Usually, the front-stage processes such as shallow trench isolation structure etching or polysilicon etching are performed in a reaction chamber, a communication opening is formed in the wall of the reaction chamber, some reaction gas can flow through the communication opening when the reaction chamber works, and in the past, polymer stacked layer by layer can be gradually accumulated on the wall of the communication opening, and if the polymer falls onto the surface of a wafer in the subsequent wafer processing process, serious wafer defects can be formed.
Due to the complicated composition of the stacked polymers, the related art chamber cleaning method is difficult to clean.
Disclosure of Invention
The application provides a reaction chamber cleaning method, which can solve the problem that the polymer stacked in a communication hole of a reaction chamber is difficult to completely remove in the related art.
In order to solve the technical problems in the background art, the application provides a method for cleaning a reaction chamber, wherein the reaction chamber is used for processing each batch of wafers, each batch of wafers comprises a plurality of groups of wafers, and each group of wafers comprises a plurality of wafers;
the processing technology of the reaction cavity to each wafer in the same batch of wafers is the same, and the cleaning method of the reaction cavity comprises the following steps:
before the processing technology is carried out on a batch of wafers, a polymer pretreatment technology is carried out on the reaction cavity, and polymers accumulated in the reaction cavity after the processing technology of the previous batch of wafers is finished are removed;
before each wafer in a group of wafers is subjected to the treatment process, removing polymers accumulated in the reaction cavity after the front wafer treatment process is finished;
and after all wafers in one group of wafers are subjected to the treatment process, removing polymers accumulated in the reaction chamber after the treatment process of all wafers in the previous group is finished, and pumping out the polymers falling in the reaction chamber.
Optionally, before the batch of wafers is subjected to the processing process, a polymer pretreatment process is performed on the reaction chamber, and the step of removing the polymer accumulated in the reaction chamber after the previous batch of wafers is subjected to the processing process includes:
judging whether the processing technology of the reaction cavity for the batch of wafers is an etching processing technology or not;
after the processing technology of the reaction cavity for the batch of wafers is determined to be an etching processing technology, before the reaction cavity performs the etching processing technology for the batch of wafers, the reaction cavity is subjected to a polymer pretreatment strengthening technology to clean polymers accumulated in the reaction cavity.
Optionally, the polymer pretreatment strengthening process comprises the following steps in sequence:
introducing oxygen into the reaction cavity, wherein the oxygen reacts with the organic polymer to remove the organic polymer;
and introducing mixed gas of nitrogen trifluoride and oxygen into the reaction chamber, so that the mixed gas reacts with the organic polymer and the inorganic polymer, and the organic polymer and the inorganic polymer are removed from reaction.
Optionally, before the treatment process is performed on each wafer in the group of wafers, the step of removing the polymer accumulated in the reaction chamber after the front-sheet wafer treatment process is finished comprises:
improving the working power of the reaction cavity;
introducing oxygen into the communicating hole of the reaction cavity, and removing the organic polymer accumulated in the communicating hole of the reaction cavity after the front wafer treatment process is finished;
and introducing nitrogen trifluoride gas into the reaction chamber to remove inorganic polymer accumulated in the reaction chamber.
Optionally, the step of introducing oxygen into the communication hole of the reaction chamber to remove the polymer accumulated in the communication hole of the reaction chamber after the front wafer processing process is finished includes:
and introducing oxygen with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing the polymer accumulated in the communicating hole of the reaction cavity after the front wafer treatment process is finished.
Optionally, after all the wafers in the group of wafers have completed the processing process, the step of removing the polymer accumulated in the reaction chamber after the processing process of all the wafers in the previous group has completed, and pumping away the polymer dropped in the reaction chamber includes:
introducing oxygen with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing organic polymers accumulated in the reaction cavity after all wafer processing processes of the former group are finished;
introducing nitrogen trifluoride gas with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing inorganic polymers accumulated in the reaction cavity after all wafer treatment processes in the former group are finished;
introducing argon gas with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s so that the removed polymer is loosened and falls into the reaction cavity;
drawing off the polymer falling in the reaction chamber.
The technical scheme at least comprises the following advantages: during the processing process of a batch of wafers, the reaction chamber is cleaned in multiple stages, and accumulated polymers can be removed more effectively.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart illustrating a method for cleaning a reaction chamber according to an embodiment of the present disclosure;
FIG. 2 shows a schematic view of a batch of wafers;
FIG. 3 is a schematic diagram of a processing chamber of the batch of wafers of FIG. 2 according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a flow chart of a method for cleaning a reaction chamber for performing a processing process on a lot of wafers according to an embodiment of the present disclosure is shown.
Referring to fig. 2, which illustrates a schematic diagram of a batch of wafers, as can be seen from fig. 2, the batch of wafers 200 includes a plurality of groups of wafers, such as a first group of wafers 210 and a second group of wafers 220 … nth group of wafers, and if the first group of wafers 210 and the second group of wafers 220 … nth group of wafers include a plurality of wafers, for example, the first group of wafers 210 includes a first wafer 211 and a second group of wafers 212 … mth wafer, the processing process of the reaction chamber for each wafer in the same batch of wafers 200 is the same.
Referring to FIG. 3, a schematic diagram of a processing chamber processing the batch of wafers of FIG. 2 according to an embodiment of the present disclosure is shown. As can be seen from fig. 3, the reaction chamber 300 forms a passage 310 for allowing the batch of wafers 100 to pass through, and the batch of wafers 100 sequentially enters the reaction chamber 300, i.e., the first group of wafers 210 first enters the reaction chamber 300 for processing, and then the second group of wafers 220 enters the reaction chamber 300 for processing, until the nth group of wafers enters the reaction chamber 300 for processing. The arrows in fig. 3 point in the direction of the process execution sequence for the batch of wafers 200.
As can be seen from fig. 1, the reaction chamber cleaning method includes the following steps S1 to S3 performed in sequence:
step S1: and before the processing process is carried out on a batch of wafers, carrying out a polymer pretreatment process on the reaction cavity, and removing polymers accumulated in the reaction cavity after the processing process of the previous batch of wafers is finished.
Optionally, the length of time of the polymer pretreatment process is 5000 to 6000 s.
With continued reference to FIG. 3, the reaction chamber 300 is formed with a communication hole 320, and the polymer 321 formed after the previous batch of wafer processing is completed is accumulated on the inner wall of the communication hole 320.
Therefore, before the batch of wafers 100 is processed in the reaction chamber 300 shown in FIG. 3, a polymer pretreatment process is performed on the reaction chamber 300 to remove the polymer accumulated in the reaction chamber after the previous batch of wafers is processed.
Alternatively, the step S1 includes the following steps S11 and S12 performed in this order:
step S11: and judging whether the processing technology of the reaction cavity on the batch of wafers is an etching processing technology on the organic matter layer.
Step S12: and after determining that the processing technology of the reaction cavity on the batch of wafers is an etching processing technology on an organic matter layer, before the reaction cavity performs the etching processing technology on the batch of wafers, performing a polymer pretreatment strengthening technology on the reaction cavity, and cleaning polymers accumulated in the reaction cavity.
Alternatively, in order to improve the cleaning effect, the steps S11 to S12 may be selectively performed in a cycle of multiple times according to the type of the processing process performed on the batch of wafers 100 by the processing chamber 300, so as to more thoroughly clean the polymer accumulated in the processing chamber after the previous batch of wafers is processed.
For example, if the processing of the batch of wafers 100 by the reaction chamber 300 is an etching process of an organic layer (such as a photoresist layer or an organic anti-reflective layer), the steps S11 to S12 are required to be performed in a cycle for a plurality of times, so as to more thoroughly clean the polymer accumulated in the reaction chamber after the previous batch of wafers is processed.
If the processing of the batch of wafers 100 by the reaction chamber 300 is an etching process for an inorganic layer (e.g., a hard mask layer), the steps S11 to S12 may be performed only once.
If the polymer pretreatment process is not performed before the batch of wafers 100 enters the reaction chamber 300 shown in fig. 3 and the processing process performed on the batch of wafers 100 in the reaction chamber 300 is an etching process, the etching gas in the etching process will attack the polymer 321, so that the polymer 321 will easily fall off on the wafer, and the wafer will have defects.
Therefore, after determining that the processing process of the batch of wafers 100 performed by the reaction chamber 300 is an etching process of an organic layer (such as a photoresist layer or an organic anti-reflective layer), the reaction chamber 300 is subjected to a polymer pre-treatment strengthening process to clean the polymer accumulated in the reaction chamber 300 before the reaction chamber 300 performs the etching process of the batch of wafers 100.
The polymer pretreatment strengthening process comprises the following steps S121 and S122 which are sequentially carried out:
step S121: and introducing oxygen into the reaction cavity, wherein the oxygen reacts with the organic polymer to remove the organic polymer.
Step S122: and introducing mixed gas of nitrogen trifluoride and oxygen into the reaction chamber, so that the mixed gas reacts with the organic polymer and the inorganic polymer, and the organic polymer and the inorganic polymer are removed from reaction.
Step S2: and before each wafer in a group of wafers is subjected to the treatment process, removing polymers accumulated in the reaction cavity after the front wafer treatment process is finished.
Using the reaction chamber 300 shown in fig. 3, before each wafer in the first group of wafers 210 shown in fig. 2 is processed, for example, after the first wafer 211 is processed, before the second wafer is processed, the reaction chamber 300 needs to be cleaned, and the polymer accumulated in the reaction chamber 300 after the first wafer 211 is processed is cleaned.
Alternatively, the step S2 may include the steps S21 and S22 performed in this order as follows:
step S21: and introducing oxygen into the communicating hole of the reaction cavity, and removing the organic polymer accumulated in the communicating hole of the reaction cavity after the front wafer treatment process is finished.
In step S21, the duration of the oxygen gas may be 20S to 40S, and the flow rate may be 40sccm to 60 sccm.
Step S3: and after all wafers in one group of wafers are subjected to the treatment process, removing polymers accumulated in the reaction chamber after the treatment process of all wafers in the previous group is finished, and pumping out the polymers falling in the reaction chamber.
For example, when all the wafers of the first group of wafers 210 shown in FIG. 2 are processed using the reaction chamber 300 shown in FIG. 3, a polymer 321 is formed at positions including the communication holes 320 of the reaction chamber 300, and the polymer 321 includes organic polymers and inorganic polymers. Therefore, after all the wafers in the first group of wafers 210 are processed, the polymer in the reaction chamber 300 needs to be cleaned and the polymer dropped in the reaction chamber needs to be pumped out.
Alternatively, the step S3 may include steps S31 to S34 performed in this order as follows:
step S31: introducing oxygen with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing organic polymers accumulated in the reaction cavity after all wafer processing processes of the former group are finished;
step S32: introducing nitrogen trifluoride gas with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing inorganic polymers accumulated in the reaction cavity after all wafer treatment processes in the former group are finished;
step S33: introducing argon gas with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s so that the removed polymer is loosened and falls into the reaction cavity;
step S34: drawing off the polymer falling in the reaction chamber.
Optionally, in order to improve the cleaning effect, the steps S31 to S34 may be performed in sequence in a plurality of cycles, so as to clean the polymer accumulated in the reaction chamber after all wafer processing processes in the front group are completed and to pump away the polymer dropped in the reaction chamber.
In the embodiment, the reaction chamber is cleaned in multiple stages in the processing process of a batch of wafers, so that accumulated polymers can be removed more effectively.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (7)
1. A method for cleaning a reaction chamber is used for processing each batch of wafers, wherein each batch of wafers comprises a plurality of groups of wafers, and each group of wafers comprises a plurality of wafers;
the reaction chamber has the same processing technology for each wafer in the same batch of wafers, and is characterized in that the reaction chamber cleaning method comprises the following steps:
before the processing technology is carried out on a batch of wafers, a polymer pretreatment technology is carried out on the reaction cavity, and polymers accumulated in the reaction cavity after the processing technology of the previous batch of wafers is finished are removed;
before each wafer in a group of wafers is subjected to the treatment process, removing polymers accumulated in the reaction cavity after the front wafer treatment process is finished;
and after all wafers in one group of wafers are subjected to the treatment process, removing polymers accumulated in the reaction chamber after the treatment process of all wafers in the previous group is finished, and pumping out the polymers falling in the reaction chamber.
2. The method of claim 1, wherein the step of performing a polymer pre-treatment process on the chamber before the batch of wafers is subjected to the treatment process to remove polymer accumulated in the chamber after the batch of wafers is subjected to the treatment process comprises:
judging whether the processing technology of the reaction cavity on the batch of wafers is an etching processing technology on an organic matter layer;
and after determining that the processing technology of the reaction cavity on the batch of wafers is an etching processing technology on an organic matter layer, before the reaction cavity performs the etching processing technology on the batch of wafers, performing a polymer pretreatment strengthening technology on the reaction cavity, and cleaning polymers accumulated in the reaction cavity.
3. The method of claim 2, wherein the polymer pre-treatment intensification process comprises the following steps in sequence:
introducing oxygen into the reaction cavity, wherein the oxygen reacts with the organic polymer to remove the organic polymer;
and introducing mixed gas of nitrogen trifluoride and oxygen into the reaction chamber, so that the mixed gas reacts with the organic polymer and the inorganic polymer, and the organic polymer and the inorganic polymer are removed from reaction.
4. The method of claim 1, wherein the step of removing polymer accumulated in the reaction chamber after the front wafer processing process is completed before the processing process is performed on each wafer in the set of wafers comprises:
improving the working power of the reaction cavity;
introducing oxygen into the communicating hole of the reaction cavity, and removing the organic polymer accumulated in the communicating hole of the reaction cavity after the front wafer treatment process is finished;
and introducing nitrogen trifluoride gas into the reaction chamber to remove inorganic polymer accumulated in the reaction chamber.
5. The method of claim 4, wherein the step of introducing oxygen into the communication hole of the reaction chamber to remove the polymer accumulated in the communication hole of the reaction chamber after the front wafer processing process is finished comprises:
and introducing oxygen with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing the polymer accumulated in the communicating hole of the reaction cavity after the front wafer treatment process is finished.
6. The method of claim 1, wherein the step of removing polymer accumulated in the reaction chamber after the processing of all wafers in the group of wafers is completed and removing polymer dropped in the reaction chamber comprises:
and introducing oxygen with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing the organic polymer accumulated in the reaction cavity after the treatment process of all the wafers in the former group is finished.
7. The method of claim 6, wherein the step of removing polymer accumulated in the reaction chamber after the processing of all wafers in the group of wafers is completed and removing polymer dropped in the reaction chamber after the processing of all wafers in the group of wafers is completed further comprises:
introducing nitrogen trifluoride gas with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s, and removing inorganic polymers accumulated in the reaction cavity after all wafer treatment processes in the former group are finished;
introducing argon gas with the flow rate of 40sccm to 60sccm into the communicating hole of the reaction cavity for 20s to 40s so that the removed polymer is loosened and falls into the reaction cavity;
drawing off the polymer falling in the reaction chamber.
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