CN116936462A - Preparation method of contact hole - Google Patents
Preparation method of contact hole Download PDFInfo
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- CN116936462A CN116936462A CN202210318048.1A CN202210318048A CN116936462A CN 116936462 A CN116936462 A CN 116936462A CN 202210318048 A CN202210318048 A CN 202210318048A CN 116936462 A CN116936462 A CN 116936462A
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- Prior art keywords
- contact hole
- etching
- semiconductor substrate
- time
- introducing
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 64
- 239000010410 layer Substances 0.000 claims abstract description 57
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000003153 chemical reaction reagent Substances 0.000 claims description 11
- 238000004380 ashing Methods 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 abstract description 30
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000005086 pumping Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 siCOH Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Abstract
The invention provides a preparation method of a contact hole, which comprises the steps of removing a patterned photoresist layer after forming an initial contact hole in an interlayer dielectric layer by using the patterned photoresist layer, and etching a semiconductor substrate by taking the initial contact hole as a window to form the contact hole. In the process of removing the patterned photoresist layer, the polymer generated during the formation of the initial contact hole can be removed, so that the polymer is prevented from adhering to the initial contact hole to affect the next contact hole formation, and the finally formed contact hole is basically free of polymer residues, so that the metal filling effect of the subsequent contact hole is effectively improved, and the purpose of improving the product yield is achieved; in addition, compared with the method for pumping the polymer through a vacuum pump in the prior art, the polymer cleaning process avoids pollution to a reaction chamber and devices, and effectively improves the yield of products.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a preparation method of a contact hole.
Background
In an integrated circuit, a contact hole is a structure for connecting a front-end device and a back-end interconnect metal, and is formed by filling metal after forming a via hole by etching in an interlayer dielectric layer. In the prior art, a vacuum pump is generally adopted to pump the polymer out of the reaction chamber, but in the actual production process, the polymer cannot be completely pumped out by the vacuum pump and remains on the etching cavity wall, so that the pollution of the reaction chamber is caused, even the polymer is attached to the surface of a wafer to form the microparticle pollution of components, and the yield of products is reduced or even scrapped.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a method for manufacturing a contact hole, in which a patterned photoresist layer is used to form an initial contact hole in an interlayer dielectric layer, the patterned photoresist layer is removed, and then a semiconductor substrate is etched with the initial contact hole as a window to form a contact hole. In the process of removing the patterned photoresist layer, the polymer generated during the formation of the initial contact hole can be removed, so that the polymer is prevented from adhering to the initial contact hole to affect the next contact hole formation, and the finally formed contact hole is basically free of polymer residues, so that the metal filling effect of the subsequent contact hole is effectively improved, and the purpose of improving the product yield is achieved; in addition, compared with the method for pumping the polymer through a vacuum pump in the prior art, the polymer cleaning process avoids pollution to a reaction chamber and devices, and effectively improves the yield of products.
To achieve the above and other related objects, the present invention provides a method for manufacturing a contact hole, including the steps of:
s1: providing a semiconductor substrate, wherein an interlayer dielectric layer and a patterned photoresist layer with an opening are sequentially formed on the semiconductor substrate;
s2: etching for the first time, and etching the interlayer dielectric layer by taking the patterned photoresist layer as a mask to expose the surface of the semiconductor substrate, wherein an initial contact hole is formed in the interlayer dielectric layer;
s3: removing the patterned photoresist layer;
s4: and performing second etching, namely etching the semiconductor substrate by taking the interlayer dielectric layer with the initial contact hole as a mask, and forming a contact hole in the semiconductor substrate.
Optionally, the first etching includes the following steps:
setting the temperature in the first reaction chamber to be 10-80 ℃ and the pressure to be 20-60 mtorr;
introducing etching gas C into the first reaction chamber x F y Ar and O 2 Controlling the flow of etching gas to be 1 sccm-300 sccm;
starting the radio frequency and setting the radio frequency power to be 200-2000 w;
and controlling the time of introducing the etching gas so that the time of the first etching is 10-200 s.
Optionally, step S3 includes:
s31: transferring the semiconductor substrate with the initial contact hole to a photoresist removing machine;
s32: ashing the patterned photoresist layer;
s33: and transferring the semiconductor substrate to a cleaning machine, and cleaning the semiconductor substrate for the first time by adopting a solution reagent.
Optionally, step S32 includes the steps of:
setting the temperature in the photoresist stripping machine to 240-260 ℃ and the pressure to 1-10 torr;
introducing etching gas O into the photoresist stripping machine table 2 Controlling the flow rate of the etching gas to be 3800 sccm-4200 sccm;
starting the radio frequency and setting the radio frequency power to 800-1000 w;
and controlling the time of introducing the etching gas so that the ashing time is 55-65 s.
Optionally, the second etching includes the following steps:
setting the temperature in the second reaction chamber to be 50-80 ℃ and the pressure to be 5-25 mtorr;
introducing etching gas C into the second reaction chamber x F y 、Cl 2 And O 2 Controlling the flow of etching gas to be 5 sccm-150 sccm;
starting the radio frequency and setting the radio frequency power to be 200-800 w;
and controlling the time of introducing the etching gas so that the time of the second etching is 5-80 s.
Optionally, step S4 further includes: and cleaning the semiconductor substrate for the second time by adopting a solution reagent.
Optionally, the first cleaning step and the second cleaning step are the same, and each step includes the following steps:
setting the temperature in the cleaning machine to be 20-150 ℃;
introducing solution reagents sulfuric acid, hydrogen peroxide, ammonia water and deionized water into the cleaning machine;
and controlling the time of introducing the solution reagent so that the cleaning time is 100-600 s.
Optionally, the depth of the contact hole is 0.3 μm to 0.4 μm.
The preparation method of the contact hole provided by the invention has at least the following technical effects:
in the preparation method of the contact hole, the patterned photoresist layer is removed, and meanwhile, the polymer generated when the initial contact hole is formed is removed, so that the polymer is prevented from adhering to the initial contact hole to influence the next contact hole, and the finally formed contact hole basically has no polymer residue, thereby effectively improving the metal filling effect of the subsequent contact hole and achieving the purpose of improving the product yield; in addition, compared with the method for pumping the polymer through a vacuum pump in the prior art, the polymer cleaning process avoids pollution to a reaction chamber and devices, and effectively improves the yield of products.
Drawings
Fig. 1 shows a flowchart of a method for manufacturing a contact hole according to an embodiment.
Fig. 2 is a schematic structural diagram of the embodiment formed in step S1.
Fig. 3 is a schematic structural diagram of the embodiment formed in step S2.
Fig. 4 is a schematic structural diagram of the embodiment formed in step S3.
Fig. 5 is a schematic structural diagram of the embodiment formed in step S4.
Description of element reference numerals
10. Substrate and method for manufacturing the same
11. Interlayer dielectric layer
12. Patterning photoresist layer
100. Initial contact hole
200. Contact hole
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be noted that, the illustrations provided in the present embodiment only illustrate the basic concept of the present invention by way of illustration, but only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number, positional relationship and proportion of each component in actual implementation may be changed at will on the premise of implementing the present technical solution, and the layout of the components may be more complex.
Examples
The embodiment provides a method for preparing a contact hole, as shown in fig. 1, including the following steps:
s1: providing a semiconductor substrate, wherein an interlayer dielectric layer and a patterned photoresist layer with an opening are sequentially formed on the semiconductor substrate;
referring to fig. 2, a semiconductor substrate 10 is provided, where the semiconductor substrate 10 may be monocrystalline silicon, polycrystalline silicon or amorphous silicon, or may be silicon, germanium, gallium arsenide or a silicon germanium compound, the semiconductor substrate 10 may also have an epitaxial layer or a silicon-on-insulator structure, and the semiconductor substrate 10 may also be other semiconductor materials, which are not listed here.
Next, an interlayer dielectric layer 11 subjected to planarization treatment is formed on the surface of the semiconductor substrate 10. In this embodiment, the material of the interlayer dielectric layer 11 is SiO 2 Or a low-k material, in other alternative embodiments, the material of the interlayer dielectric layer 12 may be SiOF, siCOH, siO, siCO, siCON, siON, fluorocarbon CF, carbon-nitrogen compound SiCN, phosphosilicate glass PSG, borophosphosilicate glass BPSG, or the like. By way of example, the interlayer dielectric layer 11 may be formed by any conventional vacuum plating technique, such as atomicDeposition (ALD), physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and the like.
Next, a photoresist layer is formed on the surface of the interlayer dielectric layer 11, and then the photoresist layer is patterned to form a patterned photoresist layer 12, and as shown in fig. 2, the patterned photoresist layer 12 defines the positions of the contact holes, thereby obtaining a semiconductor substrate to be etched by the contact holes.
S2: etching for the first time, and etching the interlayer dielectric layer by taking the patterned photoresist layer as a mask to expose the surface of the semiconductor substrate, wherein an initial contact hole is formed in the interlayer dielectric layer;
as shown in fig. 3, the above structure is placed in a first reaction chamber, and the interlayer dielectric layer 11 is etched in the depth direction of the interlayer dielectric layer 11 with the patterned photoresist layer 12 as a mask until the surface of the semiconductor substrate 10 is exposed, thereby forming an initial contact hole 100. In this embodiment, the first etching specifically includes the following steps: setting the temperature in the first reaction chamber to be 10-80 ℃ and the pressure to be 20-60 mtorr, and introducing etching gas C into the first reaction chamber x F y Ar and O 2 Controlling the flow of etching gas to be 1 sccm-300 sccm, starting radio frequency, setting the radio frequency power to be 200 w-2000 w, and controlling the time of introducing the etching gas to enable the time of the first etching to be 10 s-200 s.
S3: removing the patterned photoresist layer;
firstly, the semiconductor substrate with the initial contact hole 100 formed is transferred to a photoresist removing station, and the step of removing the patterned photoresist layer 12 is performed in the photoresist removing station because the etching equipment is expensive, which helps to save the equipment time of the etching equipment and reduce the process cost.
Next, the patterned photoresist layer 12 is ashed, i.e., the patterned photoresist layer 12 is changed into a volatile material and discharged by a plasma photoresist removing process or an oxidation photoresist removing process, to form the structure shown in fig. 4. By way of example, the temperature in the photoresist stripper is set to 240 ℃ to 260 ℃ and the pressure is set to 1torr to 10torr, and the photoresist stripper is moved toIntroducing etching gas O into the stage 2 Controlling the flow of etching gas to 3800 sccm-4200 sccm, starting radio frequency, setting the radio frequency power to 800 w-1000 w, and controlling the time of introducing the etching gas to enable the ashing time to be 55 s-65 s.
In general, a polymer is generated during the first etching process, remains in the initial contact hole 100, and affects the electrical contact characteristics of the semiconductor device, so that the polymer must be cleaned to ensure that the electrical contact characteristics of the semiconductor device are not affected. The ashing process described above can remove not only the patterned photoresist layer, but also a portion of the polymer at the same time.
Then, the structure is transferred to a cleaning machine, and is cleaned for the first time by using a solution reagent. Since a part of the polymer is removed in the ashing process, but some residues may still exist, the solution reagent is adopted to clean the structure for the first time, so that the residual polymer can be further removed, and a contact hole with better contact electrical property is formed. As an example, the temperature in the cleaning machine is set to be 20-150 ℃, solution reagents of sulfuric acid, hydrogen peroxide, ammonia water and deionized water are introduced into the cleaning machine, and the cleaning time is 100-600 s.
S4: and performing second etching, namely etching the semiconductor substrate by taking the interlayer dielectric layer with the initial contact hole as a mask, and forming a contact hole in the semiconductor substrate.
As shown in fig. 5, the above structure is placed in a second reaction chamber, and the semiconductor substrate 10 is etched in the depth direction of the semiconductor substrate 10 with the interlayer dielectric layer 11 having the initial contact hole as a mask, forming a contact hole 200 in the semiconductor substrate 10. As an example, the second etching specifically includes the steps of: setting the temperature in the second reaction chamber to be 50-80 ℃ and the pressure to be 5-25 mtorr, and introducing etching gas C into the second reaction chamber x F y 、Cl 2 And O 2 Controlling the flow of etching gas to be 5-150 sccm, starting the radio frequency, setting the radio frequency power to be 200-800 w, and controlling the time of introducing the etching gas to enable the second etchingThe time of (2) is 5 s-80 s. In this embodiment, the depth of the contact hole 200 is 0.3 μm to 0.4 μm, preferably 0.35 μm. The second etching not only can form the contact hole 200 in the semiconductor substrate, but also can remove the residual polymer in the initial contact hole 100 more thoroughly, and improve the morphology of the contact hole 200, thereby improving the reliability and yield of the semiconductor device.
In this embodiment, the first etching is performed in the first reaction chamber, the second etching is performed in the second reaction chamber, and the first reaction chamber and the second reaction chamber belong to different etching apparatuses. Because the technological parameters adopted by the first etching and the second etching are different, the two etches are carried out in different etching equipment, so that the introduction of impurities caused by the switching of the technological parameters can be avoided, and the yield of products is ensured not to be affected.
And then, transferring the structure to a cleaning machine again, and performing second cleaning to ensure that the contact holes have no residual polymer basically so as to form the contact holes with better contact electrical characteristics. Preferably, the specific steps of the second cleaning are the same as those of the first cleaning, and will not be described here.
The embodiment provides a method for preparing a contact hole, which comprises the steps of removing a patterned photoresist layer after forming an initial contact hole in an interlayer dielectric layer by using the patterned photoresist layer, and etching a semiconductor substrate by taking the initial contact hole as a window to form the contact hole. In the process of removing the patterned photoresist layer, the polymer generated during the formation of the initial contact hole can be removed, so that the polymer is prevented from adhering to the initial contact hole to affect the next contact hole formation, and the finally formed contact hole is basically free of polymer residues, so that the metal filling effect of the subsequent contact hole is effectively improved, and the purpose of improving the product yield is achieved; in addition, compared with the method for pumping the polymer through a vacuum pump in the prior art, the polymer cleaning process avoids pollution to a reaction chamber and devices, and effectively improves the yield of products.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (8)
1. The preparation method of the contact hole is characterized by comprising the following steps:
s1: providing a semiconductor substrate, wherein an interlayer dielectric layer and a patterned photoresist layer with an opening are sequentially formed on the semiconductor substrate;
s2: etching for the first time, and etching the interlayer dielectric layer by taking the patterned photoresist layer as a mask to expose the surface of the semiconductor substrate, wherein an initial contact hole is formed in the interlayer dielectric layer;
s3: removing the patterned photoresist layer;
s4: and performing second etching, namely etching the semiconductor substrate by taking the interlayer dielectric layer with the initial contact hole as a mask, and forming a contact hole in the semiconductor substrate.
2. The method for manufacturing a contact hole according to claim 1, wherein the first etching comprises the steps of:
setting the temperature in the first reaction chamber to be 10-80 ℃ and the pressure to be 20-60 mtorr;
introducing etching gas C into the first reaction chamber x F y Ar and O 2 Controlling the flow of etching gas to be 1 sccm-300 sccm;
starting the radio frequency and setting the radio frequency power to be 200-2000 w;
and controlling the time of introducing the etching gas so that the time of the first etching is 10-200 s.
3. The method of manufacturing a contact hole according to claim 1, wherein step S3 includes:
s31: transferring the semiconductor substrate with the initial contact hole to a photoresist removing machine;
s32: ashing the patterned photoresist layer;
s33: and transferring the semiconductor substrate to a cleaning machine, and cleaning the semiconductor substrate for the first time by adopting a solution reagent.
4. A method of manufacturing a contact hole according to claim 3, wherein step S32 comprises the steps of:
setting the temperature in the photoresist stripping machine to 240-260 ℃ and the pressure to 1-10 torr;
introducing etching gas O into the photoresist stripping machine table 2 Controlling the flow rate of the etching gas to be 3800 sccm-4200 sccm;
starting the radio frequency and setting the radio frequency power to 800-1000 w;
and controlling the time of introducing the etching gas so that the ashing time is 55-65 s.
5. The method for manufacturing a contact hole according to claim 1, wherein the second etching comprises the steps of:
setting the temperature in the second reaction chamber to be 50-80 ℃ and the pressure to be 5-25 mtorr;
introducing etching gas C into the second reaction chamber x F y 、Cl 2 And O 2 Controlling the flow of etching gas to be 5 sccm-150 sccm;
starting the radio frequency and setting the radio frequency power to be 200-800 w;
and controlling the time of introducing the etching gas so that the time of the second etching is 5-80 s.
6. The method for manufacturing a contact hole according to claim 3, further comprising, after step S4: and cleaning the semiconductor substrate for the second time by adopting a solution reagent.
7. The method of manufacturing a contact hole according to claim 6, wherein the first cleaning and the second cleaning are the same, each comprising the steps of:
setting the temperature in the cleaning machine to be 20-150 ℃;
introducing solution reagents sulfuric acid, hydrogen peroxide, ammonia water and deionized water into the cleaning machine;
and controlling the time of introducing the solution reagent so that the cleaning time is 100-600 s.
8. The method for manufacturing a contact hole according to claim 1, wherein the depth of the contact hole is 0.3 μm to 0.4 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210318048.1A CN116936462A (en) | 2022-03-29 | 2022-03-29 | Preparation method of contact hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210318048.1A CN116936462A (en) | 2022-03-29 | 2022-03-29 | Preparation method of contact hole |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116936462A true CN116936462A (en) | 2023-10-24 |
Family
ID=88392741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210318048.1A Pending CN116936462A (en) | 2022-03-29 | 2022-03-29 | Preparation method of contact hole |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116936462A (en) |
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2022
- 2022-03-29 CN CN202210318048.1A patent/CN116936462A/en active Pending
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