CN114280511A - Topological insulator nanowire magnetic field detector - Google Patents
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- CN114280511A CN114280511A CN202111595777.3A CN202111595777A CN114280511A CN 114280511 A CN114280511 A CN 114280511A CN 202111595777 A CN202111595777 A CN 202111595777A CN 114280511 A CN114280511 A CN 114280511A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 151
- 239000012212 insulator Substances 0.000 title claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 28
- 230000008859 change Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 7
- 230000009471 action Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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Abstract
The invention relates to the technical field of magnetic field detection, in particular to a topological insulator nanowire magnetic field detector which comprises a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostrictive block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostrictive block is arranged on the topological insulator nanowire. During application, the magnetic field detector is placed in an environment to be detected, the topological insulator nanowire is irradiated by light, the galvanometer and the power supply are connected between the first electrode and the second electrode, and magnetic field detection is achieved by measuring the change of the conducting property of the topological insulator nanowire. The invention has the advantages of low cost, small size, easy integration with other devices and the like, and has good application prospect in the field of magnetic field detection.
Description
Technical Field
The invention relates to the technical field of magnetic field detection, in particular to a magnetic field detector for a nanowire of a topological insulator.
Background
The high-precision magnetic field detection technology is an important component of modern detection technology, and is widely applied to the fields of ocean monitoring, aviation exploration, earthquake prediction, geomagnetic matching navigation and the like.
The traditional magnetic field detection technology comprises a moment magnetometer, a fluxmeter, a fluxgate magnetometer, a Hall effect magnetometer, an optical fiber magnetic field detection device and the like. The magnetic field detection based on the optical fiber has the advantage of high sensitivity. Researchers have developed a fiber optic magnetic field detector based on a Mach-Zehnder interferometer, a fiber optic magnetic field detector based on a Michelson interferometer, a fiber optic magnetic field detector based on a Faraday-Perot interferometer, and a magnetic field detector based on a fiber bragg grating. For example, patent CN108957364A discloses a magnetic field sensor, comprising a sensor body, the sensor body comprising: the optical fiber, the fixed sleeve and the magnetostrictive shell; the fixed sleeve is sleeved outside the optical fiber, and the magnetostrictive shell is arranged outside the fixed sleeve. Under the action of a magnetic field, the length of the magnetostrictive shell is extended, the length change of the magnetostrictive shell is transmitted to the optical fiber, and the magnetic field detection is realized through the transmission characteristic change of the optical fiber.
Although the optical fiber-based magnetic field detection has high sensitivity, the overall structure of the device is complex and the cost is high due to the need of a light source, a spectrometer, a light detector and the like.
Disclosure of Invention
In order to solve the above problems, the present invention provides a topological insulator nanowire magnetic field detector, which includes a substrate, a topological insulator nanowire, a first electrode, a second electrode, and a magnetostrictive block, wherein the topological insulator nanowire, the first electrode, and the second electrode are disposed on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostrictive block is disposed on the topological insulator nanowire. During application, the magnetic field detector is placed in an environment to be detected, the topological insulator nanowire is irradiated by light, the galvanometer and the power supply are connected between the first electrode and the second electrode, and the magnetostrictive blocks change stress in the topological insulator nanowire, so that the surface state of the topological insulator nanowire is changed, current in the topological insulator nanowire is changed, and magnetic field detection is realized by measuring the change of the conductive property of the topological insulator nanowire.
Further, the material of the substrate is silicon dioxide. The substrate is an insulating material, and preferably, the material of the substrate is silicon dioxide. Still further, a noble metal film, such as a silver or gold film, is provided on the underside of the substrate, which reflects incident light, thereby placing the topological-insulator nanowires in a stronger optical field. When the magnetostrictive blocks generate the expansion and contraction and change the stress in the topological insulator nanowire, the surface state and the conductive characteristic of the topological insulator nanowire are changed more, and therefore magnetic field detection with higher sensitivity is achieved.
Further, the material of the topological insulator nanowire is bismuth telluride.
Further, the material of the first electrode and the second electrode is platinum.
Further, the magnetostrictive mass has a thickness greater than 2 microns so that the magnetostrictive mass itself generates stress on the topological insulator nanowires. When the magnetostrictive block is expanded or contracted, the surface state of the topological insulator nanowire can be changed more, so that the conductive property of the topological insulator nanowire is changed more, and the magnetic field detection with higher sensitivity is realized.
Still further, the magnetostrictive mass has a width that is greater than the width of the topological insulator nanowire.
Furthermore, the magnetostrictive blocks are provided with through holes on the upper sides of the nanowires of the topological insulator, so that incident light can penetrate through the through holes and irradiate the nanowires of the topological insulator exerting the stretching force, the conductive characteristics of the nanowires of the topological insulator are changed more, and the magnetic field detection with higher sensitivity is realized.
Further, the through-hole is circular.
Further, the through hole is plural.
Further, the diameter of the via is greater than 100 nanometers.
The invention has the beneficial effects that: the invention provides a topological insulator nanowire magnetic field detector which comprises a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostrictive block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostrictive block is arranged on the topological insulator nanowire. During application, the magnetic field detector is placed in an environment to be detected, the topological insulator nanowire is irradiated by light, the galvanometer and the power supply are connected between the first electrode and the second electrode, and the magnetostrictive blocks change stress in the topological insulator nanowire, so that the surface state of the topological insulator nanowire is changed, current in the topological insulator nanowire is changed, and magnetic field detection is realized by measuring the change of the conductive property of the topological insulator nanowire. In the invention, the cost of the topological insulator nanowire and the magnetostrictive block is low, thereby leading to low cost of the whole magnetic field detector; the small size of the topological insulator nanowires and magnetostrictive blocks makes this device small in size; the invention is based on conventional electrical test, is easy to integrate with other devices, and has good application prospect in the field of magnetic field detection.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of a topological-insulator nanowire magnetic field detector.
Figure 2 is a schematic diagram of yet another topological-insulator nanowire magnetic field detector.
Figure 3 is a schematic diagram of yet another topological-insulator nanowire magnetic field detector.
In the figure: 1. a substrate; 2. a topological insulator nanowire; 3. a first electrode; 4. a second electrode; 5. a magnetostrictive block; 6. a through hole; 7. a second topological insulator nanowire.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below by referring to the accompanying drawings and examples.
Example 1
The invention provides a topological insulator nanowire magnetic field detector. As shown in fig. 1, the topological insulator nanowire magnetic field detector comprises a substrate 1, a topological insulator nanowire 2, a first electrode 3, a second electrode 4, and a magnetostrictive block 5. The material of the substrate 1 is an insulating material, and preferably, the material of the substrate 1 is silicon dioxide. The material of the topological insulator nanowire 2 is bismuth telluride. The topological insulator nanowire 2 may also be a topological insulator nanoribbon. The topological insulator can be made of bismuth telluride or other materials. The material of the first electrode 3 and the second electrode 4 is platinum. The topological insulator nanowire 2, the first electrode 3, and the second electrode 4 are disposed on the substrate 1. A first electrode 3 and a second electrode 4 are respectively fixed at two ends of the topological insulator nanowire 2, and the first electrode 3 and the second electrode 4 are also fixed on the substrate 1. That is, the first electrode 3 and the second electrode 4 fix both ends of the topological insulator nanowire 2 to the substrate 1, respectively. Thus, when the magnetostrictive block 5 expands and contracts, both ends of the topological insulator nanowire 2 are not moved. The magnetostrictive blocks 5 are arranged on the topological insulator nanowire 2, specifically, the magnetostrictive blocks 5 are fixed on the topological insulator nanowire 2, and the magnetostrictive blocks 5 are not fixed with the substrate 1. Under the action of the magnetic field, the magnetostrictive mass 5 changes the stress in the topological insulator nanowire 2.
In the present invention, the topological insulator nanowire 2 is used as a photoconductive material, and the first electrode 3 and the second electrode 4 are used as a source and a drain, respectively. In the absence of illumination, a bias voltage is applied to the first electrode 3 and the second electrode 4 through an external power supply, and dark current is generated in the topological insulator nanowire 2; upon illumination, a photocurrent is generated within the topological insulator nanowire 2 when the first electrode 3 and the second electrode 4 are also biased by an external power source. The intensity of the photocurrent, which is much larger than the dark current, strongly depends on the surface state of the topological insulator.
When the magnetic field detector is applied, the magnetic field detector is placed in an environment to be detected, the topological insulator nanowire 2 is irradiated by light, and the wavelength range of incident light is 400 nanometers to 1550 nanometers. Preferably, the incident light is a single wavelength light source, and the wavelength of the incident light is 633 nanometers or 1550 nanometers. The galvanometer and the power supply are connected between the first electrode 3 and the second electrode 4, and the magnetostrictive block 5 changes the stress in the nanowire 2 of the topological insulator, so that the surface state of the nanowire 2 of the topological insulator is changed, the current in the nanowire 2 of the topological insulator is changed, and the magnetic field detection is realized by measuring the change of the conductive characteristic of the nanowire 2 of the topological insulator. In the present invention, the topological insulator nanowires 2 and magnetostrictive blocks 5 are low in cost, resulting in low cost of the entire magnetic field detector; the small size of the topological insulator nanowires 2 and magnetostrictive blocks 5 makes this device small in size; the invention is based on conventional electrical test, is easy to integrate with other devices, and has good application prospect in the field of magnetic field detection.
In the invention, the magnetic field in the environment to be detected not only changes the stress in the nanowire 2 of the topological insulator, but also because the magnetostrictive block 5 is in contact with the nanowire 2 of the topological insulator, the magnetostrictive block 5 also changes the microenvironment on the surface of the nanowire 2 of the topological insulator, and further changes the Fermi level of the nanowire 2 of the topological insulator, thereby changing the conductive characteristics of the nanowire 2 of the topological insulator more and realizing the magnetic field detection with higher sensitivity.
In the present invention, since the first electrode 3 and the second electrode 4 fix both ends of the topological-insulator nanowire 2 on the substrate 1, the magnetostrictive mass 5 changes not only the stress in the topological-insulator nanowire 2, which is covered by it, but also the stress in the topological-insulator nanowire 2, which is not covered by it. Therefore, the present invention can realize magnetic field detection with high sensitivity.
Example 2
On the basis of example 1, the magnetostrictive mass 5 has a thickness greater than 2 μm. The width of the magnetostrictive mass 5 is greater than the width of the topological insulator nanowire 2. The gravity of the magnetostrictive mass 5 presses on the topological insulator nanowire 2. The thickness of the magnetostrictive block 5 is larger than 2 micrometers, the width of the magnetostrictive block 5 is larger than the width of the nanowire 2 of the topological insulator, so that the magnetostrictive block 5 has larger gravity, the force exerted on the nanowire 2 of the topological insulator is larger, the surface state of the nanowire 2 of the topological insulator is changed, and the band gap structure of the nanowire 2 of the topological insulator is changed, so that the light absorption characteristic of the nanowire 2 of the topological insulator is changed, the conductive characteristic of the nanowire 2 of the topological insulator is further changed, and the magnetic field detection with higher sensitivity is realized.
Furthermore, the width of the magnetostrictive mass 5 is larger than the width of the topological insulator nanowire 2. When the magnetostrictive mass 5 expands and contracts, the stress in the topological insulator nanowire 2 is also changed in the direction perpendicular to the topological insulator nanowire 2, and therefore, the stress in the topological insulator nanowire 2 can be changed more, so that the conductive characteristic of the topological insulator nanowire 2 can be changed more, and magnetic field detection with higher sensitivity can be realized.
Example 3
In addition to embodiment 2, as shown in fig. 2, a through hole 6 is provided on the magnetostrictive block 5 on the upper side of the topological insulator nanowire 2. The through-hole 6 is circular so that light of different polarization states can penetrate through the through-hole 6. The through holes 6 are plural, and the plural through holes 6 are distributed along the topological insulator nanowire 2. When the width of the topological insulator nanowire 2 is larger than the diameter of the through-hole 6, it is also possible that a plurality of through-holes 6 are distributed side by side along the topological insulator nanowire 2. The diameter of the through-hole 6 is greater than 100 nm, and further, the diameter of the through-hole 6 is greater than 200 nm so that incident light can penetrate through the through-hole 6. In this way, incident light can be irradiated to a portion of the topological-insulator nanowire 2 having a large stress change, thereby changing the fermi level of the portion more, thereby changing the conductive characteristic of the entire topological-insulator nanowire 2 more, and thus achieving a magnetic field detection with higher sensitivity.
In addition, under the action of a magnetic field to be detected, the magnetostrictive blocks 5 deform, and the size of the through holes 6 is changed, so that the light intensity irradiated on the topological insulator nanowire 2 from the through holes 6 is changed, the photocurrent on the topological insulator nanowire 2 is changed more, and the magnetic field detection with higher sensitivity is realized.
Further, on the topological insulator nanowire 2, the magnetostrictive bulk 5 is thin; outside the topological insulator nanowire 2, the magnetostrictive mass 5 is thick. This both ensures that more light passes through the through-hole 6 and exerts a larger force on the topological insulator nanowire 2 in order to increase the sensitivity even more.
Example 4
On the basis of embodiment 3, as shown in fig. 3, the nanowire device further comprises a second topological insulator nanowire 7, wherein both ends of the second topological insulator nanowire 7 are fixed between the first electrode 3 and the second electrode 4, and the second topological insulator nanowire 7 is parallel to the topological insulator nanowire 2. The magnetostrictive mass 5 fixedly connects the topological insulator nanowire 2 and the second topological insulator nanowire 7. That is, in the present embodiment, the magnetostrictive mass 5 connects the topological-insulator nanowire 2 and the second topological-insulator nanowire 7 together. Under the action of a magnetic field to be detected, the magnetostrictive block 5 extends to push away the nanowire 2 and the nanowire 7 of the topological insulator, so that the nanowire 2 and the nanowire 7 of the second topological insulator are bent, the internal stress of the nanowire 2 and the nanowire 7 of the second topological insulator is changed more, the photocurrent between the first electrode 3 and the second electrode 4 is changed more, and the magnetic field detection with higher sensitivity is realized
Further, the topological insulator nanowire 2 and the second topological insulator nanowire 7 are thin in the middle and thick at both ends. The magnetostrictive mass 5 covers the middle of the topological insulator nanowire 2 and the second topological insulator nanowire 7. Thus, the topological-insulator nanowire 2 and the second topological-insulator nanowire 7 are more easily bent, thereby more changing the conductive characteristics of the topological-insulator nanowire 2 and the second topological-insulator nanowire 7, and thus achieving higher sensitivity of magnetic field detection.
Example 5
In addition to example 4, a noble metal film was provided on the bottom surface of the substrate 1. The noble metal film is a silver film or a gold film. The noble metal film reflects the incident light, thereby leaving the topological insulator nanowire 2 in a stronger optical field. When the magnetostrictive mass 5 contracts and changes the stress in the topological insulator nanowire 2, the surface state and the conductive characteristics of the topological insulator nanowire 2 are more changed, thereby realizing magnetic field detection with higher sensitivity.
Further, on the topological insulator nanowire 2 and the second topological insulator nanowire 7, the magnetostrictive bulk 5 is thin; outside the topological insulator nanowire 2 and the second topological insulator nanowire 7, the magnetostrictive mass 5 is thick. This both ensures that more light passes through the through-hole 6 and exerts a larger force on the topological insulator nanowire 2 and the second topological insulator nanowire 7 in order to increase the sensitivity even more.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the scope of protection of the present application.
Claims (10)
1. A topological insulator nanowire magnetic field detector is characterized by comprising a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostrictive block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostrictive block is arranged on the topological insulator nanowire.
2. The topological-insulator nanowire magnetic field detector of claim 1, wherein: the substrate is made of silicon dioxide.
3. The topological-insulator nanowire magnetic field detector of claim 1, wherein: the topological insulator nanowire is made of bismuth telluride.
4. The topological-insulator nanowire magnetic field detector of claim 1, wherein: the material of the first electrode and the second electrode is platinum.
5. The topological-insulator nanowire magnetic field detector of claim 1, wherein: the magnetostrictive mass has a thickness greater than 2 microns.
6. The topological-insulator nanowire magnetic field detector of claim 1, wherein: the magnetostrictive mass has a width greater than a width of the topological insulator nanowire.
7. The topological-insulator nanowire magnetic field detector of any of claims 1-6, wherein: and through holes are formed in the magnetostrictive blocks on the upper sides of the topological insulator nanowires.
8. The topological-insulator nanowire magnetic field detector of claim 7, wherein: the through hole is circular.
9. The topological-insulator nanowire magnetic field detector of claim 8, wherein: the through holes are multiple.
10. The topological-insulator nanowire magnetic field detector of claim 9, wherein: the diameter of the through hole is larger than 100 nanometers.
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| US20170279035A1 (en) * | 2015-08-11 | 2017-09-28 | International Business Machines Corporation | Magnetic field sensor based on topological insulator and insulating coupler materials |
| US20190148620A1 (en) * | 2017-11-13 | 2019-05-16 | University Of Florida Research Foundation, Inc. | Powerless magnetic field sensing using magnetoelectric nanowires |
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| CN112198466A (en) * | 2020-10-09 | 2021-01-08 | 金华伏安光电科技有限公司 | Magnetic field detection device based on carbon nano tube |
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- 2021-12-24 CN CN202111595777.3A patent/CN114280511B/en active Active
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| ROBERT LUSCHE ET AL.: "Effect of the Wire Width and Magnetic Field on the Intrinsic Detection Efficiency of Superconducting Nanowire Single-Photon Detectors", IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, vol. 23, no. 3, 3 June 2013 (2013-06-03), pages 1 - 4, XP011489859, DOI: 10.1109/TASC.2012.2235515 * |
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