CN114280511B - Topological insulator nanowire magnetic field detector - Google Patents
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- CN114280511B CN114280511B CN202111595777.3A CN202111595777A CN114280511B CN 114280511 B CN114280511 B CN 114280511B CN 202111595777 A CN202111595777 A CN 202111595777A CN 114280511 B CN114280511 B CN 114280511B
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- 239000012212 insulator Substances 0.000 title claims abstract description 156
- 239000002070 nanowire Substances 0.000 title claims abstract description 153
- 238000001514 detection method Methods 0.000 claims abstract description 30
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052697 platinum Inorganic materials 0.000 claims description 3
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- 238000010586 diagram Methods 0.000 description 3
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Abstract
The invention relates to the technical field of magnetic field detection, in particular to a topological insulator nanowire magnetic field detector, which comprises a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostriction block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostriction block is arranged on the topological insulator nanowire. When the magnetic field detector is applied, the magnetic field detector is placed in an environment to be detected, meanwhile, the topological insulator nanowire is irradiated by light, a galvanometer and a power supply are connected between the first electrode and the second electrode, and the magnetic field detection is realized by measuring the change of the conductive characteristic of the topological insulator nanowire. The invention has the advantages of low cost, small size, easy integration with other devices, and the like, and has good application prospect in the field of magnetic field detection.
Description
Technical Field
The invention relates to the technical field of magnetic field detection, in particular to a topological insulator nanowire magnetic field detector.
Background
The high-precision magnetic field detection technology is an important component of the modern detection technology, and is widely applied to the fields of ocean monitoring, aviation detection, earthquake prediction, geomagnetic matching navigation and the like.
The traditional magnetic field detection technology comprises a moment magnetometer, a fluxgate magnetometer, a Hall effect magnetometer, an optical fiber magnetic field detection device and the like. The optical fiber-based magnetic field detection has the advantage of high sensitivity. Researchers have developed fiber optic magnetic field detectors based on Mach-Zehnder interferometers, michelson interferometers, faraday-Perot interferometers, fiber optic bragg grating-based magnetic field detectors. For example, patent CN108957364a discloses a magnetic field sensor comprising a sensor body comprising: an optical fiber, a fixed sleeve, and a magnetostrictive housing; the fixed sleeve is sleeved outside the optical fiber, and the magnetostrictive shell is arranged outside the fixed sleeve. Under the action of the magnetic field, the length of the magnetostrictive shell is prolonged, the length change of the magnetostrictive shell is transmitted to the optical fiber, and the magnetic field detection is realized through the propagation characteristic change of the optical fiber.
Although the optical fiber-based magnetic field detection has higher sensitivity, the whole structure of the device is complex and the cost is high due to the need of using a light source, a spectrometer, a light detector and the like.
Disclosure of Invention
In order to solve the problems, the invention provides a topological insulator nanowire magnetic field detector which comprises a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostriction block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostriction block is arranged on the topological insulator nanowire. When the magnetic field detector is applied, the magnetic field detector is placed in an environment to be detected, meanwhile, light is applied to irradiate the topological insulator nanowire, a galvanometer and a power supply are connected between the first electrode and the second electrode, the magnetostrictive block changes the stress in the topological insulator nanowire, so that the surface state of the topological insulator nanowire is changed, the current in the topological insulator nanowire is further changed, and the magnetic field detection is realized by measuring the change of the conductive characteristic of the topological insulator nanowire.
Further, the material of the substrate is silicon dioxide. The substrate is an insulating material, preferably silicon dioxide. Still further, a noble metal film, such as a silver film or a gold film, is provided on the underside of the substrate, the noble metal film reflecting the incident light, thereby placing the topological insulator nanowires in a stronger optical field. When the magnetostrictive mass expands and contracts and changes the stress in the topological insulator nanowire, the surface state and the conductive characteristic of the topological insulator nanowire are changed more, so that the magnetic field detection with higher sensitivity is realized.
Still further, the material of the topological insulator nanowire is bismuth telluride.
Further, the material of the first electrode and the second electrode is platinum.
Still further, the magnetostrictive mass has a thickness greater than 2 microns so that the magnetostrictive mass itself creates pressure on the topological insulator nanowire. When the magnetostrictive block stretches, the surface state of the topological insulator nanowire can be changed more, so that the conductive characteristic of the topological insulator nanowire is changed more, and the magnetic field detection with higher sensitivity is realized.
Still further, the magnetostrictive mass has a width that is greater than the width of the topological insulator nanowire.
Furthermore, through holes are formed in the upper sides of the topological insulator nanowires, incident light can penetrate through the through holes conveniently, the positions of the topological insulator nanowires applying the stretching force are irradiated, the conductive characteristics of the topological insulator nanowires are changed more, and magnetic field detection with higher sensitivity is achieved.
Further, the through hole is circular.
Further, the through holes are multiple.
Still further, the diameter of the through hole is greater than 100 nanometers.
The invention has the beneficial effects that: the invention provides a topological insulator nanowire magnetic field detector which comprises a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostriction block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostriction block is arranged on the topological insulator nanowire. When the magnetic field detector is applied, the magnetic field detector is placed in an environment to be detected, meanwhile, light is applied to irradiate the topological insulator nanowire, a galvanometer and a power supply are connected between the first electrode and the second electrode, the magnetostrictive block changes the stress in the topological insulator nanowire, so that the surface state of the topological insulator nanowire is changed, the current in the topological insulator nanowire is further changed, and the magnetic field detection is realized by measuring the change of the conductive characteristic of the topological insulator nanowire. In the invention, the cost of the topological insulator nanowire and the magnetostriction block is low, thereby leading to low cost of the whole magnetic field detector; the dimensions of the topological insulator nanowires and magnetostrictive masses are small, making the size of this device small; the invention is based on conventional electrical test, is easy to integrate with other devices, and has good application prospect in the field of magnetic field detection.
The present invention will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic diagram of a topological insulator nanowire magnetic field detector.
Fig. 2 is a schematic diagram of yet another topological insulator nanowire magnetic field detector.
Fig. 3 is a schematic diagram of yet another topological insulator nanowire magnetic field detector.
In the figure: 1. a substrate; 2. topological insulator nanowires; 3. a first electrode; 4. a second electrode; 5. a magnetostrictive block; 6. a through hole; 7. a second topological insulator nanowire.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings and examples.
Example 1
The invention provides a topological insulator nanowire magnetic field detector. As shown in fig. 1, the topological insulator nanowire magnetic field detector comprises a substrate 1, topological insulator nanowires 2, a first electrode 3, a second electrode 4 and a magnetostrictive mass 5. The material of the substrate 1 is an insulating material, preferably the material of the substrate 1 is silicon dioxide. The material of the topological insulator nanowire 2 is bismuth telluride. The topological insulator nanowire 2 can also be a topological insulator nanoribbon. The material of the topological insulator can be bismuth telluride or other materials. The material of the first electrode 3 and the second electrode 4 is platinum. The topological insulator nanowire 2, the first electrode 3 and the second electrode 4 are arranged on the substrate 1. The first electrode 3 and the second electrode 4 are respectively fixed at two ends of the topological insulator nanowire 2, and the first electrode 3 and the second electrode 4 are also fixed on the substrate 1. That is, the first electrode 3 and the second electrode 4 fix both ends of the topological insulator nanowire 2 to the substrate 1, respectively. Thus, when the magnetostrictive mass 5 expands and contracts, both ends of the topological insulator nanowire 2 are immobilized. The magnetostrictive mass 5 is disposed on the topological insulator nanowire 2, specifically, the magnetostrictive mass 5 is fixed on the topological insulator nanowire 2, and the magnetostrictive mass 5 is not fixed with the substrate 1. Under the influence of the magnetic field, the magnetostrictive mass 5 changes the stress in the topological insulator nanowire 2.
In the present invention, the topological insulator nanowire 2 is used as a photoconductive material and the first electrode 3 and the second electrode 4 are used as a source and a drain, respectively. When no illumination exists, bias voltage is applied to the first electrode 3 and the second electrode 4 through an external power supply, and dark current is generated in the topological insulator nanowire 2; when the first electrode 3 and the second electrode 4 are biased by an external power supply during illumination, photocurrent is generated in the topological insulator nanowire 2. The intensity of the photocurrent is much greater than the dark current, and the intensity of the photocurrent is strongly dependent on the surface state of the topological insulator.
When in use, the magnetic field detector is placed in an environment to be detected, meanwhile, the topological insulator nanowire 2 is irradiated by using light, and the wavelength range of the incident light is 400-1550 nanometers. Preferably, the incident light is a single wavelength light source, and the wavelength of the incident light is 633 nm or 1550 nm. The galvanometer and the power supply are connected between the first electrode 3 and the second electrode 4, the magnetostrictive block 5 changes the stress in the topological insulator nanowire 2, so that the surface state of the topological insulator nanowire 2 is changed, the current in the topological insulator nanowire 2 is changed, and the magnetic field detection is realized by measuring the change of the conductive characteristic of the topological insulator nanowire 2. In the present invention, the cost of the topological insulator nanowire 2 and magnetostrictive mass 5 is low, resulting in a low cost of the entire magnetic field detector; the dimensions of the topological insulator nanowire 2 and magnetostrictive mass 5 are small, making the size of this device small; the invention is based on conventional electrical test, is easy to integrate with other devices, and has good application prospect in the field of magnetic field detection.
In the invention, the magnetic field in the environment to be measured not only changes the stress in the topological insulator nanowire 2, but also changes the microenvironment of the surface of the topological insulator nanowire 2 due to the contact of the magnetostrictive block 5 and the topological insulator nanowire 2, so that the fermi level of the topological insulator nanowire 2 is changed, the conductive characteristic of the topological insulator nanowire 2 is changed more, and the magnetic field detection with higher sensitivity is realized.
In the present invention, since the first electrode 3 and the second electrode 4 fix both ends of the topological insulator nanowire 2 on the substrate 1, the magnetostrictive mass 5 changes not only the stress in the topological insulator nanowire 2 of which the covered portion is covered but also the stress in the topological insulator nanowire 2 of which the uncovered portion is not covered. Therefore, the present invention can realize high-sensitivity magnetic field detection.
Example 2
On the basis of example 1, the thickness of magnetostrictive mass 5 is greater than 2 microns. The magnetostrictive mass 5 has a width greater than the width of the topological insulator nanowire 2. The weight of magnetostrictive mass 5 presses on topological insulator nanowire 2. The thickness of the magnetostrictive block 5 is larger than 2 micrometers, and the width of the magnetostrictive block 5 is larger than the width of the topological insulator nanowire 2, so that the magnetostrictive block 5 has larger gravity, the force applied to the topological insulator nanowire 2 is larger, the surface state of the topological insulator nanowire 2 is changed, the band gap structure of the topological insulator nanowire 2 is changed, the light absorption characteristic of the topological insulator nanowire 2 is changed, and the conductive characteristic of the topological insulator nanowire 2 is further changed, so that the magnetic field detection with higher sensitivity is realized.
Furthermore, since the width of the magnetostrictive mass 5 is larger than the width of the topological insulator nanowire 2. When the magnetostrictive mass 5 stretches, the stress in the topological insulator nanowire 2 is also changed in the direction perpendicular to the topological insulator nanowire 2, and therefore, the stress in the topological insulator nanowire 2 can be changed more, so that the conductive characteristic of the topological insulator nanowire 2 is changed more, and thus, the magnetic field detection with higher sensitivity is realized.
Example 3
On the basis of example 2, as shown in fig. 2, a through hole 6 is provided in the magnetostrictive mass 5 above the topological insulator nanowire 2. The through holes 6 are circular so that light of different polarization states can penetrate the through holes 6. The number of vias 6 is a plurality, and the plurality of vias 6 are distributed along the topological insulator nanowire 2. When the width of the topological insulator nanowire 2 is larger than the diameter of the via 6, it is also possible that a plurality of vias 6 are distributed side by side along the topological insulator nanowire 2. The diameter of the through hole 6 is greater than 100 nm, and further, the diameter of the through hole 6 is greater than 200 nm so that incident light can penetrate through the through hole 6. In this way, incident light can strike the portion of the topological insulator nanowire 2 with a larger stress change, thereby changing the fermi level of that portion more, thereby changing the conductive properties of the entire topological insulator nanowire 2 more, thereby achieving higher sensitivity magnetic field detection.
In addition, under the effect of the magnetic field to be measured, the magnetostrictive block 5 deforms, and the size of the through hole 6 is changed, so that the light intensity irradiated onto the topological insulator nanowire 2 from the through hole 6 is changed, and the photocurrent on the topological insulator nanowire 2 is changed more, so that the magnetic field detection with higher sensitivity is realized.
Further, on the topological insulator nanowire 2, the magnetostrictive mass 5 is thin; outside the topological insulator nanowire 2, the magnetostrictive mass 5 is thick. This both ensures more light passes through the via 6 and exerts a greater force on the topological insulator nanowire 2 in order to increase the sensitivity even more.
Example 4
On the basis of example 3, as shown in fig. 3, a second topological insulator nanowire 7 is further included, two ends of the second topological insulator nanowire 7 are fixed between the first electrode 3 and the second electrode 4, and the second topological insulator nanowire 7 and the topological insulator nanowire 2 are parallel. The magnetostrictive block 5 is fixedly connected with the topological insulator nanowire 2 and the second topological insulator nanowire 7. That is, in the present embodiment, the magnetostrictive mass 5 connects the topological insulator nanowire 2 and the second topological insulator nanowire 7 together. Under the action of the magnetic field to be measured, the magnetostrictive block 5 stretches to push away the topological insulator nanowire 2 and the second topological insulator nanowire 7, so that the topological insulator nanowire 2 and the second topological insulator nanowire 7 bend, the stress inside the topological insulator nanowire 2 and the second topological insulator nanowire 7 is changed more, the photocurrent between the first electrode 3 and the second electrode 4 is changed more, and the magnetic field detection with higher sensitivity is realized
Further, the topological insulator nanowire 2 and the second topological insulator nanowire 7 are thin in the middle and thick at both ends. The magnetostrictive mass 5 covers the middle of the topological insulator nanowire 2 and the second topological insulator nanowire 7. In this way, the topological insulator nanowire 2 and the second topological insulator nanowire 7 are more likely to bend, thereby changing the conductive properties of the topological insulator nanowire 2 and the second topological insulator nanowire 7 more, and thus achieving a higher sensitivity of magnetic field detection.
Example 5
On the basis of example 4, a noble metal film was provided on the bottom surface of the substrate 1. The noble metal film is a silver film or a gold film. The noble metal film reflects the incident light, so that the topological insulator nanowire 2 is in a stronger optical field. When the magnetostrictive mass 5 expands and contracts and changes the stress in the topological insulator nanowire 2, the surface state and the conductive properties of the topological insulator nanowire 2 are changed more, thereby achieving higher sensitivity of magnetic field detection.
Further, on the topological insulator nanowire 2 and the second topological insulator nanowire 7, the magnetostrictive mass 5 is thin; outside the topological insulator nanowire 2 and the second topological insulator nanowire 7, the magnetostrictive mass 5 is thick. This both ensures more light passes through the via 6 and exerts a larger force on the topological insulator nanowire 2 and the second topological insulator nanowire 7 in order to increase the sensitivity even more.
The foregoing description of the preferred embodiments of the present invention is not intended to limit the invention to the precise form disclosed, and any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. The topological insulator nanowire magnetic field detector is characterized by comprising a substrate, a topological insulator nanowire, a first electrode, a second electrode and a magnetostriction block, wherein the topological insulator nanowire, the first electrode and the second electrode are arranged on the substrate, the first electrode and the second electrode are respectively fixed at two ends of the topological insulator nanowire, the first electrode and the second electrode are also fixed on the substrate, and the magnetostriction block is arranged on the topological insulator nanowire; wherein, a through hole is arranged on the upper side of the topological insulator nanowire; when illumination is carried out, bias voltage is applied to the first electrode and the second electrode through an external power supply, photocurrent is generated in the topological insulator nanowire, the magnetostrictive block deforms under the action of a magnetic field to be detected, the size of the through hole is changed, so that the light intensity irradiated on the topological insulator nanowire is changed, the photocurrent on the topological insulator nanowire is changed more, and magnetic field detection is realized by measuring the change of the conductive characteristic of the topological insulator nanowire.
2. The topological insulator nanowire magnetic field detector of claim 1, wherein: the substrate is made of silicon dioxide.
3. The topological insulator nanowire magnetic field detector of claim 1, wherein: the topological insulator nanowire is made of bismuth telluride.
4. The topological insulator nanowire magnetic field detector of claim 1, wherein: the first electrode and the second electrode are made of platinum.
5. The topological insulator nanowire magnetic field detector of claim 1, wherein: the magnetostrictive mass has a thickness greater than 2 microns.
6. The topological insulator nanowire magnetic field detector of claim 1, wherein: the magnetostrictive mass has a width that is greater than a width of the topological insulator nanowire.
7. The topological insulator nanowire magnetic field detector of claim 6, wherein: the through holes are round.
8. The topological insulator nanowire magnetic field detector of claim 7, wherein: the number of the through holes is multiple.
9. The topological insulator nanowire magnetic field detector of claim 8, wherein: the diameter of the through hole is larger than 100 nanometers.
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| CN103238101A (en) * | 2010-12-07 | 2013-08-07 | 小利兰斯坦福大学理事会 | Electrical and optical devices incorporating topological materials including topological insulators |
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| CN112198466A (en) * | 2020-10-09 | 2021-01-08 | 金华伏安光电科技有限公司 | Magnetic field detection device based on carbon nano tube |
| CN113805116A (en) * | 2021-08-31 | 2021-12-17 | 彭彦莉 | Magnetostrictive magnetic field detection device |
| CN113805117A (en) * | 2021-08-31 | 2021-12-17 | 彭彦莉 | Interface type magnetic field detection device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010120297A1 (en) * | 2009-04-15 | 2010-10-21 | Hewlett-Packard Development Company, L.P | Nanowire sensor having a nanowire and electrically conductive film |
| US9941463B2 (en) * | 2015-08-11 | 2018-04-10 | International Business Machines Corporation | Magnetic field sensor based on topological insulator and insulating coupler materials |
| US10892399B2 (en) * | 2017-11-13 | 2021-01-12 | University Of Florida Research Foundation, Inc. | Powerless magnetic field sensing using magnetoelectric nanowires |
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| CN103238101A (en) * | 2010-12-07 | 2013-08-07 | 小利兰斯坦福大学理事会 | Electrical and optical devices incorporating topological materials including topological insulators |
| CN111856352A (en) * | 2020-07-31 | 2020-10-30 | 西安柯莱特信息科技有限公司 | Magnetic field detector based on local surface plasmon resonance |
| CN112198466A (en) * | 2020-10-09 | 2021-01-08 | 金华伏安光电科技有限公司 | Magnetic field detection device based on carbon nano tube |
| CN113805116A (en) * | 2021-08-31 | 2021-12-17 | 彭彦莉 | Magnetostrictive magnetic field detection device |
| CN113805117A (en) * | 2021-08-31 | 2021-12-17 | 彭彦莉 | Interface type magnetic field detection device |
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| Effect of the Wire Width and Magnetic Field on the Intrinsic Detection Efficiency of Superconducting Nanowire Single-Photon Detectors;Robert Lusche et al.;IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY;20130603;第23卷(第3期);第1-4页 * |
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