CN114280009A - Comprehensive defect detection device and method for silicon carbide wafer - Google Patents
Comprehensive defect detection device and method for silicon carbide wafer Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
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Abstract
The invention discloses a device and a method for detecting comprehensive defects of a silicon carbide wafer, which are characterized in that an optical detection method is simply adopted, an automatic focusing function is attached, and multiple defects on the front side, the back side and the inside of the silicon carbide wafer can be detected simultaneously through multi-light combination; and the statistical information of various defects of the silicon carbide wafer is automatically identified and collected by matching with an intelligent algorithm program. The invention can quickly and accurately identify and count various defects of the silicon carbide wafer, and various defects can be accurately positioned, thereby facilitating the quality analysis of the wafer.
Description
Technical Field
The invention relates to the technical field of silicon carbide, in particular to a comprehensive defect detection device and method for a silicon carbide wafer.
Background
Silicon carbide has a wide forbidden band width, high thermal conductivity and high breakdown voltage, so that the silicon carbide can be widely applied to devices which work under high frequency, high power, radiation resistance and extreme conditions. Is a semiconductor material with great potential.
Defect-free silicon carbide wafers are critical to the fabrication of high quality epitaxial wafers, which in turn determine the performance of semiconductor devices. Common defects of the silicon carbide wafer include micropipes, pits, scratches, edge breakage, mixed crystals and wrapping. Therefore, the defect detection of the produced silicon carbide wafer is an important step for ensuring the qualified quality of the silicon carbide product.
In recent years, various methods for detecting defects of silicon carbide wafers have been known, and in general, quality inspection of silicon carbide wafer products is performed by using optical instruments, so that defect information of silicon carbide wafers can be obtained in time. However, most of the optical inspection devices on the market are specific in defect detection, i.e. only one or several defects can be detected. If it is desired to inspect all defects in a silicon carbide wafer, the wafer must be sequentially transported to different optical inspection equipment for separate inspection, which introduces additional time and capital costs and can easily cause scratches to the wafer when the wafer is transferred, thereby degrading wafer quality. Moreover, many optical inspection devices are manual or semi-automatic, that is, after a wafer is placed in an optical instrument, a defect position needs to be manually found, and after the defect is found, manual photographing is needed to record and process data, which undoubtedly reduces the wafer inspection efficiency.
Disclosure of Invention
In view of the above, the present invention provides a device and a method for detecting defects of silicon carbide wafers, which can automatically detect various defects of silicon carbide wafers.
In order to achieve the purpose, the invention provides the following technical scheme:
an integrated defect inspection apparatus for silicon carbide wafers, comprising: the supporting mechanism is arranged on the sample stage, the light generating system and the light collecting system;
the sample table is used for placing a wafer;
the light collection system is positioned on one side of the sample stage; the light collection system includes: a lens and a light source receiver;
the light generating system includes: the multiple light generating mechanisms are positioned on one side or two sides of the sample table; the light source receiver can collect various detection light rays of the light generating mechanism through the lens.
Preferably, the light generating system comprises: the light reflection mechanism is positioned on the first side of the sample table;
the light reflection mechanism includes: a first light source and a first reflector; the light of the first light source can be irradiated to the first side of the wafer through the first reflector and reflected;
the light collection system is located on the first side of the sample stage, and the light source receiver can collect reflected light of the light reflection mechanism through the lens.
Preferably, the light generating system comprises: a light transmission mechanism located on a second side of the sample stage;
the transmitted light mechanism includes: a second light source and a second mirror; the light of the second light source can be transmitted from the second side to the first side of the wafer by the second reflector;
the light collection system is located on the first side of the sample stage, and the light source receiver can collect the transmission light of the light transmission mechanism through the lens.
Preferably, the light generating system further comprises: the light transmission polarization mechanism is positioned on the second side of the sample table; the light transmission mechanism is positioned between the sample stage and the light transmission polarization mechanism;
the light transmission polarization mechanism includes: a polarizer, a third light source and a third reflector;
the light collection system further comprises: a deviation testing device; the polarization analyzer is positioned between the light reflection mechanism and the lens; the light source receiver can collect the transmission polarized light of the light transmission polarization mechanism through the lens.
Preferably, the lens is an automatic focusing objective lens, is provided with a ranging laser sensor and a control program, and has the amplification factor of 1-20 times.
Preferably, the light collection system is located above the sample stage;
the lens can move up and down relative to the sample stage at a moving speed of 0-50mm/s and a single-acquisition visual field of 5-50mm2。
Preferably, the sample stage comprises: a robotic motion stage capable of moving within the wafer plane.
Preferably, the automatic motion platform is a magnetic drive linear motion platform, and the wafer can be translated in two directions of an X axis and a Y axis.
Preferably, the moving speed of the automatic moving platform is 0-100mm/s, and the automatic moving platform can move in a snake shape.
Preferably, the sample stage is provided with a hollow portion for placing a wafer and/or the sample stage has a transparent portion for contacting the wafer.
Preferably, the edges of the hollow portion are notched.
Preferably, the transparent part is a glass wafer arranged at four corners of the hollow part.
Preferably, the support mechanism includes: a base and an equipment housing;
the comprehensive defect detection device for the silicon carbide wafer further comprises: a light shield disposed on the device housing.
Preferably, the method further comprises the following steps: a control unit;
the comprehensive defect detection device for the silicon carbide wafer can automatically test various defects on the front side, the back side and the inside of the wafer through the program setting of the control unit, wherein the defects comprise: front and back scratches, front and back pits, micropipes, mixed crystals and edge breakage.
A silicon carbide wafer comprehensive defect detection method adopts the silicon carbide wafer comprehensive defect detection device to detect the wafer placed on the sample stage, and comprises the following steps:
collecting detection light rays of a plurality of light generating mechanisms through the light collecting system;
and analyzing and identifying the defects according to the collected detection light data.
Preferably, the collecting the detection light of the plurality of light generating mechanisms includes:
collecting reflected light of the light reflection mechanism, transmitted light of the light transmission mechanism and transmitted polarized light of the light transmission polarization mechanism;
the defect is identified according to the analysis of the collected detection light data, which comprises the following steps:
the defects of the front surface of the substrate including the edge breakage of the wafer are detected by using reflected light, the mixed crystals and the internal defects including the wrapping of the wafer are detected by using transmitted light, and the internal stress defects including the micropipes of the wafer are detected by using transmitted polarized light.
Preferably, the condition for identifying edge breakage is: chip edge gap defects;
the conditions for recognizing the mixed crystals are as follows: the block has edge defects in the transmission mode;
the conditions for identifying the package are as follows: a region where point-like defects are gathered in the transmissive mode;
the conditions for identifying the microtubes were: the similarity with butterfly shape is more than 40%, and the brightness is more than 200cd/m2The light transmittance is more than 30%, and the area ratio of the brightest area is more than 25%.
Preferably, the analyzing and identifying the defect according to the collected detection light data further includes:
if the defect is detected in the detection results of the reflected light and the transmitted light at the same time, the defect is on the silicon surface;
if the defect is detected only in the transmitted light detection result and not in the reflected light detection result, the defect is on the carbon surface.
Preferably, before the collecting the detection light rays of the plurality of light generating mechanisms by the light collecting system, the method further comprises:
firstly, recognizing the edge of a wafer, then fitting one edge, and judging the edge breakage position according to whether a black recessed part exists at the edge;
the defect is identified according to the analysis of the collected detection light data, which comprises the following steps:
detecting defects on the front surface of the substrate including the edge breakage of the wafer by utilizing reflected light, judging whether the size of the edge breakage recess exceeds a set value, if so, remaining the edge breakage calculation, and if not, filtering.
Preferably, after analyzing and identifying the defect according to the collected detection light data, the method further includes:
the defects are identified and classified, and each defect is located.
According to the technical scheme, the comprehensive defect detection device and method for the silicon carbide wafer based on optical detection are matched with an intelligent algorithm program to automatically identify and collect the statistical information of various defects of the silicon carbide wafer. The invention can quickly and accurately identify and count various defects of the silicon carbide wafer, and various defects can be accurately positioned, thereby facilitating the quality analysis of the wafer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a silicon carbide wafer comprehensive defect inspection apparatus provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a sample stage according to an embodiment of the present invention.
The device comprises a base 1, a device shell 2, a polarizer 3, a polarizer 4, a sample platform 5, a light shield 6, a polarization analyzer 7, a lens 8, a light source receiver 9, a first light source 10, a first reflector 11, a second light source 12, a second reflector 13, a third light source 14, a third reflector 15, an automatic moving platform 16, a notch 17, a glass wafer 18 and a hollow part.
Detailed Description
The invention has simple structure, high automation degree and strong universality, can accurately and quickly detect various defects in the silicon carbide wafer and automatically collect defect statistics.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention adopts the following technical scheme:
a silicon carbide wafer comprehensive defect detection device adopts an optical detection method simply, is provided with an automatic focusing function, and can simultaneously detect various defects on the front side, the back side and the inside of a silicon carbide wafer by combining a plurality of light sources. From bottom to top, the device comprises a base 1, an equipment shell 2, a sample table 4, three light sources, a lens, a light source receiver and a control unit. The optical system detects the wafer using reflected light, transmitted light, and transmitted polarized light. The detection light source forms an image through the polarization analyzer, the lens and the charge coupled device. The resulting image is then analyzed using an intelligent algorithm program to obtain statistical data about the different types of defects.
The optical equipment below the sample stage comprises a third light source 13, a third reflector 14, a polarizer 3, a second light source 11 and a second reflector 12 from bottom to top in sequence. The optical equipment above the sample stage is respectively a first light source 9 and a first reflector 10 from bottom to top, a polarization analyzer 6, a lens 7 and a light source receiver 8.
The base 1 and the equipment housing 2 are responsible for supporting the silicon carbide wafer integrated defect inspection equipment and are provided with a light shield 5 which is responsible for eliminating interference from an external light source when inspecting the wafer.
The sample stage is additionally provided with a linear automatic motion platform 15 driven by magnetism, the sample stage can translate in the X axis and the Y axis, the motion speed is 0-60mm/s, the sample stage can automatically move horizontally in front, back, left and right directions according to a certain rule, the collected point path is in continuous snake-shaped line-by-line scanning, the collection range covers the whole wafer, and each part of the wafer can be detected. 1. The sample stage occupied space area was 724 x 827 mm.
The middle of the sample table is provided with a circular hollow part 18 for placing a wafer, so that different light sources can detect the defects of the wafer from the upper part of the wafer or the lower part of the wafer; the four corners of the hollow part are respectively provided with a transparent round glass sheet 17 which is responsible for supporting the wafer and can not shield the detection light, and the edge defect of the wafer can be accurately detected. The hollow portion has a notch 16 at its edge to allow an operator to pick and place a test wafer using a suction pen.
The light source adopts a mode of combining three light sources, and the wavelengths of the three light sources are 450 and 480 nm. The first light source is positioned right above the sample table, is a reflection light source and is provided with a reflector, the upper part of the first light source is connected with a polarization analyzer, and the reflected light passes through the polarization analyzer and then upwards is a lens and reaches a light source receiver after passing through the lens; the second light source is positioned under the sample table and is a transmission light source, and transmission light emitted by the second light source firstly penetrates through the sample from bottom to top, then sequentially passes through the polarization analyzer and the lens and finally reaches the light source receiver; the third light source is positioned right below the second light source and is a transmission light source, a polarizer is arranged between the second light source and the third light source, the transmission light emitted by the third light source is firstly changed into polarized transmission light through the polarizer, then the polarized transmission light sequentially passes through the sample, the polarization analyzer and the lens from bottom to top and finally reaches the light source receiver.
As shown in fig. 1, the three-source optical system includes a first light source 9 and a first reflector 10 above the sample stage to provide reflected light to detect the wafer. The light is irradiated onto the wafer through the reflector and reflected upward, so that the defects on the front surface of the substrate including edge breakage of the wafer are detected by the reflected light.
The three-source optical system includes a second light source 11 and a second reflector 12 above the sample stage to provide a transmitted light detection wafer. The light is transmitted from the lower surface of the wafer to the upper side of the wafer through the reflecting mirror, so that the mixed crystal of the wafer and the internal defect wrapped in the wafer are detected by using the transmitted light.
The three-source optical system includes a third light source 13 under the second light source, a third mirror 14, and a polarizer 3, providing a transmitted polarized light detection wafer. The light irradiates towards the lower surface of the wafer through the third reflector 14, forms polarized light in the middle through the polarizer 3 and further transmits the polarized light from the lower surface of the wafer to the upper part of the wafer, so that the internal stress-containing defects of the wafer including microtubes are detected through the transmitted polarized light.
The integrated defect inspection device for silicon carbide wafers performs integrated analysis by combining data of transmitted light and reflected light, and can identify scratches and pits on the front and back sides of the wafers.
There are polarization analyzer, camera lens and light source receiver above the first light source, and three kinds of light sources all produce the ascending detection light of direction: reflected light, transmitted light and transmitted polarized light are used for generating a silicon carbide wafer comprehensive defect detection picture through a polarization analyzer, a lens and a light source receiver.
All detection light sources finally enter the lens 7 and the light source receiver 8 to generate detection pictures, and detection data and results are transmitted to a computer for automatic processing. The lens of the invention does not adopt an ocular lens, the magnification of the used objective lens is 1-20 times, the objective lens can move up and down for automatic focusing when a wafer is tested, the objective lens is focused through a laser displacement sensor equipped with the objective lens and a program equipped with the objective lens, and the objective lens automatically and accurately focuses again when a new visual field is moved, thereby ensuring the detection accuracy. In the automatic focusing process, the sample stage is fixed, the objective lens moves up and down at the moving speed of 0-50mm/s, and the single collection visual field of the lens on the silicon carbide wafer is 5-100mm2. And then, automatically identifying the detected picture by an intelligent identification algorithm program, and finding and classifying various defects.
The device can automatically test the front and back sides and various internal defects of the silicon carbide wafer through the program setting of the control unit without manually switching the light source, wherein the defects comprise: front and back scratches, front and back pits, micropipes, mixed crystals and edge breakage.
The front-back defect testing mechanism is that a first light source and a second light source are used for testing and analyzing together, and if the defects are detected in the detection results of the first light source and the second light source simultaneously, the defects are on the silicon surface; if the defect is detected only in the second light source detection result and not detected in the first light source detection result, the defect is on the carbon surface.
The edge-broken defect only uses a first light source, the micropipe defect only uses a third light source, and the mixed crystal and package defect only uses a second light source.
The edge of the wafer is first identified and then an edge is fitted, and the edge collapse position is determined by whether there is a black recessed portion at the edge. And setting a size of the edge collapse recess in the control unit, and filtering the edge collapse recess which exceeds the set value of the user and is left to calculate the edge collapse recess which does not exceed the set value of the user.
The intelligent algorithm identifies the microtubes under the conditions: the similarity with butterfly shape is more than 40%, the brightness is more than 200cd/m2, the light transmittance is more than 30%, and the area ratio of the brightest area is more than 25%.
And the scratches and pits on the front and back sides of the wafer can be identified by analyzing the detection data of the transmitted light and the reflected light. The intelligent algorithm identifies the pits under the following conditions: appearing as point or bulk defects. The conditions for identifying the scratch are as follows: linear defects in both reflective and transmissive modes.
The intelligent algorithm identifies the conditions of edge breakage as follows: chip edge chipping.
The intelligent algorithm identifies the mixed crystals under the following conditions: the block shape has edge defects in the transmission mode.
The intelligent algorithm identifies the packages under the following conditions: a region where the point defects are concentrated in the transmissive mode.
The invention uses an intelligent recognition algorithm program to recognize and classify various defects, and simultaneously, each defect is accurately positioned and displayed by a graph, thereby having guiding significance for crystal defects and wafer surface defects generated by the prior process.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (20)
1. An integrated defect inspection apparatus for silicon carbide wafers, comprising: the supporting mechanism, and a sample stage (4), a light generating system and a light collecting system which are arranged on the supporting mechanism;
the sample table (4) is used for placing a wafer;
the light collection system is positioned on one side of the sample stage (4); the light collection system includes: a lens (7) and a light source receiver (8);
the light generating system includes: a plurality of light generating mechanisms positioned on one side or two sides of the sample stage (4); the light source receiver (8) can collect various detection light rays of the light generating mechanism through the lens (7).
2. The integrated defect inspection apparatus for silicon carbide wafers of claim 1 wherein the light generating system comprises: a light reflection mechanism positioned at the first side of the sample stage (4);
the light reflection mechanism includes: a first light source (9) and a first reflector (10); the light of the first light source (9) can be irradiated to the first side of the wafer through the first reflector (10) and reflected;
the light collection system is positioned on the first side of the sample stage (4), and the light source receiver (8) can collect the reflected light of the light reflection mechanism through the lens (7).
3. The integrated defect inspection apparatus for silicon carbide wafers as set forth in claim 1 or 2, wherein the light generating system comprises: a light transmission mechanism located on a second side of the sample stage (4);
the transmitted light mechanism includes: a second light source (11) and a second mirror (12); the light of the second light source (11) can be transmitted from the second side to the first side of the wafer by the second mirror (12);
the light collection system is located on the first side of the sample table (4), and the light source receiver (8) can collect the transmission light of the light transmission mechanism through the lens (7).
4. The integrated defect inspection apparatus for silicon carbide wafers of claim 3 wherein the light generating system further comprises: a light transmission polarization mechanism located at the second side of the sample stage (4); and the light transmission mechanism is positioned between the sample stage (4) and the light transmission polarization mechanism;
the light transmission polarization mechanism includes: a polarizer (3), a third light source (13) and a third reflector (14);
the light collection system further comprises: a deviation testing device (6); the polarization analyzer (6) is positioned between the light reflection mechanism and the lens (7); the light source receiver (8) can collect the transmission polarized light of the light transmission polarization mechanism through the lens (7).
5. The integrated defect inspection apparatus for silicon carbide wafers as set forth in claim 1, wherein said lens (7) is an objective lens of auto-focusing equipped with a ranging laser sensor and a control program with an amplification factor of 1-20 times.
6. The integrated defect inspection apparatus of silicon carbide wafers according to claim 5, wherein the light collection system is located above the sample stage (4);
the lens (7) can move up and down relative to the sample stage (4) at a moving speed of 0-50mm/s, and the single-acquisition visual field of the lens (7) is 5-50mm2。
7. The integrated defect inspection apparatus of silicon carbide wafers according to claim 1, wherein the sample stage (4) comprises: a robotic motion stage (15) capable of moving within the wafer plane.
8. The integrated defect inspection apparatus for silicon carbide wafers as set forth in claim 7 wherein said automated motion stage (15) is a magnetically driven linear motion stage capable of translating said wafers in both the X and Y directions.
9. Integrated defect inspection device of silicon carbide wafers according to claim 7 characterized by the fact that the moving speed of the automatic moving platform (15) is 0-100mm/s, able to move in serpentine shape.
10. Comprehensive defect inspection device of silicon carbide wafers according to claim 1 characterized in that the sample stage (4) is provided with a hollow section (18) for placing a wafer and/or the sample stage (4) has a transparent section for contacting the wafer.
11. Integrated defect inspection device of silicon carbide wafers according to claim 10, characterized in that the edges of the hollow part (18) are notched (16).
12. The integrated defect inspection apparatus for silicon carbide wafers as set forth in claim 10, wherein said transparent portions are glass disks (17) provided at four corners of said hollow portion (18).
13. The integrated defect inspection apparatus for silicon carbide wafers of claim 1 wherein the support mechanism comprises: a base (1) and an equipment housing (2);
the comprehensive defect detection device for the silicon carbide wafer further comprises: a light shield (5) arranged on the equipment shell (2).
14. The integrated defect inspection apparatus for silicon carbide wafers as set forth in claim 1, further comprising: a control unit;
the comprehensive defect detection device for the silicon carbide wafer can automatically test various defects on the front side, the back side and the inside of the wafer through the program setting of the control unit, wherein the defects comprise: front and back scratches, front and back pits, micropipes, mixed crystals and edge breakage.
15. A silicon carbide wafer comprehensive defect inspection method characterized by inspecting the wafer placed on the sample stage (4) by using the silicon carbide wafer comprehensive defect inspection apparatus according to any one of claims 1 to 14, comprising the steps of:
collecting detection light rays of a plurality of light generating mechanisms through the light collecting system;
and analyzing and identifying the defects according to the collected detection light data.
16. The silicon carbide wafer comprehensive defect inspection method of claim 15, wherein said collecting a plurality of inspection lights of said light generating means comprises:
collecting reflected light of the light reflection mechanism, transmitted light of the light transmission mechanism and transmitted polarized light of the light transmission polarization mechanism;
the defect is identified according to the analysis of the collected detection light data, which comprises the following steps:
the defects of the front surface of the substrate including the edge breakage of the wafer are detected by using reflected light, the mixed crystals and the internal defects including the wrapping of the wafer are detected by using transmitted light, and the internal stress defects including the micropipes of the wafer are detected by using transmitted polarized light.
17. The silicon carbide wafer comprehensive defect inspection method according to claim 16, wherein the conditions for identifying edge chipping are: chip edge gap defects;
the conditions for recognizing the mixed crystals are as follows: the block has edge defects in the transmission mode;
the conditions for identifying the package are as follows: a region where point-like defects are gathered in the transmissive mode;
the conditions for identifying the microtubes were: the similarity with butterfly shape is more than 40%, the brightness is more than 200cd/m2, the light transmittance is more than 30%, and the area ratio of the brightest area is more than 25%.
18. The silicon carbide wafer integrated defect inspection method of claim 16, wherein said analyzing and identifying defects based on collected inspection light data further comprises:
if the defect is detected in the detection results of the reflected light and the transmitted light at the same time, the defect is on the silicon surface;
if the defect is detected only in the transmitted light detection result and not in the reflected light detection result, the defect is on the carbon surface.
19. The silicon carbide wafer comprehensive defect inspection method according to claim 15, further comprising, before said collecting, by said light collection system, inspection light rays of said plurality of kinds of light generation mechanisms:
firstly, recognizing the edge of a wafer, then fitting one edge, and judging the edge breakage position according to whether a black recessed part exists at the edge;
the defect is identified according to the analysis of the collected detection light data, which comprises the following steps:
detecting defects on the front surface of the substrate including the edge breakage of the wafer by utilizing reflected light, judging whether the size of the edge breakage recess exceeds a set value, if so, remaining the edge breakage calculation, and if not, filtering.
20. The silicon carbide wafer comprehensive defect inspection method of claim 15, further comprising, after said analyzing and identifying defects based on the collected inspection light data:
the defects are identified and classified, and each defect is located.
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