CN114279280B - Ink-jet printing microstructure transduction element and preparation method thereof - Google Patents
Ink-jet printing microstructure transduction element and preparation method thereof Download PDFInfo
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- 230000026683 transduction Effects 0.000 title claims abstract description 54
- 238000010361 transduction Methods 0.000 title claims abstract description 54
- 238000007641 inkjet printing Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000005245 sintering Methods 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 51
- 238000007639 printing Methods 0.000 claims description 24
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910001882 dioxygen Inorganic materials 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000009210 therapy by ultrasound Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 6
- 230000002596 correlated effect Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 description 44
- 239000004332 silver Substances 0.000 description 44
- 239000002360 explosive Substances 0.000 description 8
- 230000000977 initiatory effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The invention discloses an ink-jet printing microstructure transduction element and a preparation method thereof, wherein conductive ink is deposited on a substrate material according to a designed transduction element pattern by using ink-jet printing, and the microstructure transduction element can be obtained through sintering.
Description
Technical Field
The invention belongs to the field of initiating explosive device ignition devices, and relates to an inkjet printing microstructure transduction element and a preparation method thereof.
Background
In recent years, the rapid development of national defense technology drives the technical innovation of modern weapon systems, conventional weapon equipment is changed to high-tech weapon equipment, the volume of the weapon systems is changed to microminiaturization, the space reserved for a initiating explosive device in the weapon is reduced, and higher requirements are put forward on microminiaturization and intellectualization of initiating explosive devices, so that the initiating explosive device systems are also continuously developed, and at present, china has developed into fourth-generation initiating explosive devices: MEMS initiating explosive device. Typical MEMS initiating explosive devices comprise three parts, namely a microstructure transducer, a micro-energetic chip, and a micro-safety mechanism (micro-safety chip), which together form a micro-initiation sequence or micro-ignition sequence.
For MEMS initiating explosive devices, the microstructure transducer is the core part thereof. The current preparation process of the microstructure transduction element is an MEMS process, and the preparation process involves complex process flows of substrate cleaning, resistance target sputtering, photoresist coating, exposure and development, etching, photoresist removing, testing and the like. The film deposition and the energy conversion element forming are performed in two steps, so that the method has the advantages of long time consumption, high cost, low material utilization rate and complex process, and industrial wastewater generated in the process also increases the burden of the environment. Therefore, the development of a microstructure transduction element technology with simple preparation process, low cost, high material utilization rate and controllable forming pattern has important significance.
Disclosure of Invention
The invention aims to provide an inkjet printing microstructure transduction element and a preparation method thereof.
The technical solution for realizing the purpose of the invention is as follows:
the invention relates to a microstructure transduction element which is prepared by using an ink-jet printing technology and comprises a base material and a bridge film layer, preferably, conductive ink is deposited on the base material in an ink-jet printing mode, a plurality of transduction elements can be printed by a printing array method, and the formation speed of the transduction elements is high. The ink jet printed microstructure is made by the following process: the conductive ink of the transduction element is deposited on a substrate material in an ink-jet printing mode, and the transduction element is obtained through sintering; the resistance calculation formula of the transducer is R=ρl/s, the resistivity ρ value is certain when the sintering process is fixed, the sectional area s is the product of the bridge area thickness and the width, l is the bridge area length, the thickness is positively correlated with the printing layer number, the printing layer number is increased, the thickness is increased, therefore, the resistance of the transducer is directly proportional to the aspect ratio of the bridge area pattern, and is negatively correlated with the printing layer number, the printing layer number is increased, the resistance is reduced, and the transducer with different resistance values is obtained by adjusting the printing layer number and the size of the transducer.
Preferably, the base material is a silicon dioxide wafer, a ceramic substrate, a glass substrate, or a polyimide material.
Preferably, the bridge material is silver, copper, carbon.
A preparation method of an ink-jet printing microstructure transduction element comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the substrate material in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: surface treatment is carried out on the substrate material, so that the binding force between the transduction element film and the substrate material is improved;
step 3: adding conductive ink into a printer ink box, and performing ink-jet printing on the transducer film according to a designed pattern;
step 4: sintering the printed transduction element at 100-1000 ℃ for 0.5-2 h to obtain the microstructure transduction element.
Preferably, the surface treatment method of the base material is ultraviolet ozone treatment.
Preferably, the heating temperature of the substrate is set at 0-60 ℃, the ink jet interval is set at 5-45 mu m, the temperature of the nozzle is set at 20-65 ℃, the piezoelectric waveforms are double waves, the piezoelectric voltage is set at 10-40V, the number of printing layers is 1-5, the printing interval between layers is 0-30 min, and the pre-curing time is 10-50 min.
Preferably, the resistivity of the conductive ink is 2-20 mu omega cm, and the content of the conductive material is 10-65%.
Preferably, the microstructure transducer has a bridge film thickness of 2-10 μm, a bridge film size of 1.8x1.5mm, a bridge region portion length of 100-400 μm and a width of 100-150 μm.
Compared with the prior art, the invention has the following advantages:
(1) The invention prepares the transduction element by using the ink-jet printing technology, the film deposition and the transduction element forming can be completed in one step, and compared with the MEMS technology, the preparation method is simple and efficient and has high material utilization rate.
(2) The shape control of the transducer is completed by the printed pattern design, and compared with the MEMS technology, the change of the size and the shape of the transducer is easier to carry out.
(3) The invention can print multi-layer bridge film material by ink jet printing, and the bridge film thickness is more convenient to control than physical vapor deposition and chemical vapor deposition methods.
(4) The invention can print the array of the transduction elements by using the ink-jet printing technology, can obtain a large number of transduction elements at one time, and has high integration degree.
(5) The conductive ink for ink-jet printing provided by the invention comprises nano silver ink, nano copper ink and carbon-based ink, and can be used for preparing various transduction elements.
Drawings
Fig. 1 is a schematic structural diagram of a silver film bridge transducer according to embodiment 1 of the present invention.
Fig. 2 is a pattern of a print size of a transducer provided in embodiment 1 of the present invention.
Fig. 3 is a physical diagram of a silver film bridge transducer provided in example 1 of the present invention.
(a) Silver film ignition bridge; (b) a 50-fold bridge plot; (c) 100 bridge plot.
Fig. 4 is a pattern of the print size of the transducer provided in embodiment 2 of the present invention.
Fig. 5 is a pattern of the print size of the transducer provided in embodiment 3 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the specific embodiments of the present invention will be provided.
Example 1
The silver film bridge transduction element is prepared by ink-jet printing, wherein fig. 1 is a structural schematic diagram of a silver film bridge, fig. 2 is a pattern printed by the silver film transduction element, fig. 3 is a silver film bridge physical diagram and a picture under a bridge area microscope, and the silver film bridge prepared by ink-jet printing is uniform in surface and good in pattern forming condition.
To obtain a 1 Ω silver film bridge, the number of print layers was set to 2 and the bridge zone pattern aspect ratio was 1:1.2. The preparation of the silver film transducer comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the dioxygen silicon wafer in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: placing the dioxygen silicon wafer into an ultraviolet cleaning machine for 15min for surface treatment;
step 3: adding nano silver ink into a printer ink box, fixing a dioxygen silicon chip on a printer substrate, setting the heating temperature of the substrate to 55 ℃, setting the ink-jet interval to 25 mu m, setting the temperature of a spray head to 35 ℃, setting the piezoelectric waveform to double waves, setting the piezoelectric voltage to 20V, setting the number of printing layers to 2, setting the printing interval between layers to 5min, setting the pre-curing time to 30min, and performing ink-jet printing on a transducer film according to a designed pattern (I shape, bridge area length-width ratio is 1:1.2 and shown in figure 2);
step 4: and sintering the printed transduction element for 1h at 150 ℃ to obtain the microstructure transduction element.
The bridge region and the electrode region of the silver film transduction element are both obtained by an ink-jet printing mode, and the silver film transduction element is assembled in the ceramic plug to obtain a silver film bridge, and the structure of the silver film bridge is shown in figure 1. The silver film bridge resistance is 1+/-0.1 omega, the ignition experiment is carried out by dipping the lead stefenate, and the total ignition voltage is 7.115V.
Example 2
As shown in FIG. 4, the pattern of the transducer print is double V-shaped, in order to design a silver film bridge with 0.8Ω, the number of print layers is set to 2, and the aspect ratio of the bridge area pattern is 2:1. The preparation of the silver film transducer comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the dioxygen silicon wafer in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: placing the dioxygen silicon wafer into an ultraviolet cleaning machine for 15min for surface treatment;
step 3: adding nano silver ink into a printer ink box, fixing a dioxygen silicon chip on a printer substrate, setting the heating temperature of the substrate to 55 ℃, setting the ink-jet interval to 25 mu m, setting the temperature of a spray head to 35 ℃, setting the piezoelectric waveform to double waves, setting the piezoelectric voltage to 20V, setting the number of printing layers to 2, setting the printing interval between layers to 5min, setting the pre-curing time to 30min, and performing ink-jet printing on a transducer film according to a designed pattern (the length-width ratio of a double V-shaped bridge area is 2:1 as shown in figure 4);
step 4: and sintering the printed transduction element for 1h at 150 ℃ to obtain the microstructure transduction element.
The bridge region and the electrode region of the silver film transduction element are both obtained by an ink-jet printing mode, and the silver film transduction element is assembled in the ceramic plug to obtain a silver film bridge, and the structure of the silver film bridge is shown in figure 1. The silver film bridge resistance is 0.8+/-0.2 omega, the ignition experiment is carried out by dipping the lead stefenate, and the total ignition voltage is 8.345V.
Example 3
As shown in FIG. 5, the pattern of the transducer is I-shaped, in order to design a silver film bridge with 0.8Ω, the number of printing layers is set to 1 layer, and the aspect ratio of the pattern of the bridge area is set to 2:1. The preparation of the silver film transducer comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the dioxygen silicon wafer in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: placing the dioxygen silicon wafer into an ultraviolet cleaning machine for 15min for surface treatment;
step 3: adding nano silver ink into a printer ink box, fixing a dioxygen silicon chip on a printer substrate, setting the heating temperature of the substrate to 55 ℃, setting the ink jet interval to 25 mu m, setting the temperature of a spray head to 35 ℃, setting the piezoelectric waveforms to double waves, setting the piezoelectric voltage to 20V, setting the number of printing layers to 2, setting the pre-curing time to 30min, and performing ink jet printing on a transduction element film according to a designed pattern (I shape, the length-width ratio of a bridge area is 2:1 and shown in figure 5);
step 4: and sintering the printed transduction element for 1h at 150 ℃ to obtain the microstructure transduction element.
The bridge region and the electrode region of the silver film transduction element are both obtained by an ink-jet printing mode, and the silver film transduction element is assembled in the ceramic plug to obtain a silver film bridge, and the structure of the silver film bridge is shown in figure 1. The silver film bridge resistance is 0.8+/-0.1 omega, and the ignition experiment is carried out by dipping the lead stefenate, and the total ignition voltage is 8.150V.
Example 4
The pattern of the transducer print is H-shaped like that of the embodiment 3, and in order to design a silver film bridge with the dimension of 1.5 omega, the number of print layers is set to be 1, and the aspect ratio of the pattern of the bridge area is set to be 2:1. The preparation of the silver film transducer comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the dioxygen silicon wafer in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: placing the dioxygen silicon wafer into an ultraviolet cleaning machine for 15min for surface treatment;
step 3: adding nano silver ink into a printer ink box, fixing a dioxygen silicon chip on a printer substrate, setting the heating temperature of the substrate to 55 ℃, setting the ink jet interval to 25 mu m, setting the temperature of a spray head to 35 ℃, setting the piezoelectric waveforms to double waves, setting the piezoelectric voltage to 20V, setting the number of printing layers to 1, setting the pre-curing time to 30min, and performing ink jet printing on a transduction element film according to a designed pattern (I shape, the length-width ratio of a bridge area is 2:1 and shown in figure 5);
step 4: and sintering the printed transduction element for 1h at 200 ℃ to obtain the microstructure transduction element.
The bridge region and the electrode region of the silver film transduction element are both obtained by an ink-jet printing mode, and the silver film transduction element is assembled in the ceramic plug to obtain a silver film bridge, and the structure of the silver film bridge is shown in figure 1. The silver film bridge resistance is 1.5+/-0.1 omega, and the ignition experiment is carried out by dipping the lead stefenate, and the total ignition voltage is 6.150V.
Example 5
The pattern of the transducer print is H-shaped like the embodiment 1, and in order to design a silver film bridge with 2 omega, the number of print layers is set to 1 layer, and the length-width ratio of the pattern of the bridge area is 1:1.2. The preparation of the silver film transducer comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the dioxygen silicon wafer in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: placing the dioxygen silicon wafer into an ultraviolet cleaning machine for 15min for surface treatment;
step 3: adding nano silver ink into a printer ink box, fixing a dioxygen silicon chip on a printer substrate, setting the heating temperature of the substrate to 55 ℃, setting the ink jet interval to 25 mu m, setting the temperature of a spray head to 35 ℃, setting the piezoelectric waveform to double waves, setting the piezoelectric voltage to 20V, setting the number of printing layers to 1, setting the pre-curing time to 30min, and performing ink jet printing on a transducer film according to a designed pattern (I shape, the length-width ratio of a bridge area is 1:1.2 and shown in figure 2);
step 4: and sintering the printed transduction element for 1h at 200 ℃ to obtain the microstructure transduction element.
The bridge region and the electrode region of the silver film transduction element are both obtained by an ink-jet printing mode, and the silver film transduction element is assembled in the ceramic plug to obtain a silver film bridge, and the structure of the silver film bridge is shown in figure 1. The silver film bridge resistance is 2.0+/-0.1 omega, the ignition experiment is carried out by dipping the lead stefenate, and the total ignition voltage is 5.865V.
Claims (3)
1. A preparation method of an ink-jet printing microstructure transduction element is characterized by comprising the following steps of: the method comprises the following steps:
step 1: respectively carrying out ultrasonic treatment on the substrate material in deionized water and ethanol liquid for 15min, taking out and drying;
step 2: surface treatment is carried out on the substrate material, so that the binding force between the transduction element film and the substrate material is improved;
step 3: adding conductive ink into a printer ink box, and performing ink-jet printing on the transducer film according to a designed pattern;
step 4: sintering the printed transduction element for 0.5-2 hours at the temperature of 100-1000 ℃ to obtain the microstructure transduction element;
the thickness of the bridge film of the microstructure transducer is 2-10 mu m, the size of the bridge film is 1.8 x 1.5mm, the length of the bridge area is 100-400 mu m,
The width is 100-150 mu m; the substrate heating temperature is set at 0-60 ℃, the ink jet interval is set at 5-45 mu m, the nozzle temperature is set at 20-65 ℃, the piezoelectric waveforms are double waves, the piezoelectric voltage is set at 10-40V, the number of printing layers is 1-5, the printing interval between layers is 0-30 min, and the pre-curing time is 10-50 min;
the ink jet printed microstructure is made by the following process: the conductive ink of the transduction element is deposited on a substrate material in an ink-jet printing mode, and the transduction element is obtained through sintering; the resistance calculation formula of the transducer is R=ρl/s, the resistivity ρ value is certain when the sintering process is fixed, the sectional area s is the product of the bridge area thickness and the width, l is the bridge area length, the thickness is positively correlated with the printing layer number, the printing layer number is increased, the thickness is increased, therefore, the resistance of the transducer is directly proportional to the aspect ratio of the bridge area pattern, is negatively correlated with the printing layer number, the printing layer number is increased, the resistance is reduced, and the transducer with different resistance values is obtained by adjusting the printing layer number and the size of the transducer; the conductive ink comprises nano silver ink, nano copper ink or carbon-based ink; the substrate material is a dioxygen silicon wafer, a ceramic substrate, a glass sheet or a polyimide material.
2. The method of preparing an inkjet printed microstructure transducer according to claim 1, wherein: the resistivity of the conductive ink is 2-20 mu omega cm, and the content of the conductive material is 10% -65%.
3. The method of preparing an inkjet printed microstructure transducer according to claim 1, wherein: the resistance of the microstructure transduction element is adjusted according to the design of the printing pattern, and the resistance range is 1-10Ω.
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| US7834295B2 (en) * | 2008-09-16 | 2010-11-16 | Alexza Pharmaceuticals, Inc. | Printable igniters |
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