CN114270547A - 全光谱白色发光装置 - Google Patents
全光谱白色发光装置 Download PDFInfo
- Publication number
- CN114270547A CN114270547A CN202080058371.9A CN202080058371A CN114270547A CN 114270547 A CN114270547 A CN 114270547A CN 202080058371 A CN202080058371 A CN 202080058371A CN 114270547 A CN114270547 A CN 114270547A
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- light
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- white light
- emitting device
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N5/0613—Apparatus adapted for a specific treatment
- A61N5/0618—Psychological treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962872227P | 2019-07-09 | 2019-07-09 | |
US62/872,227 | 2019-07-09 | ||
US16/517,524 | 2019-07-19 | ||
US16/517,524 US10685941B1 (en) | 2019-07-09 | 2019-07-19 | Full spectrum white light emitting devices |
PCT/US2020/040801 WO2021007121A1 (en) | 2019-07-09 | 2020-07-03 | Full spectrum white light emitting devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114270547A true CN114270547A (zh) | 2022-04-01 |
Family
ID=71075134
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080058372.3A Pending CN114270511A (zh) | 2019-07-09 | 2020-07-03 | 全光谱白色发光装置 |
CN202080058371.9A Pending CN114270547A (zh) | 2019-07-09 | 2020-07-03 | 全光谱白色发光装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CN202080058372.3A Pending CN114270511A (zh) | 2019-07-09 | 2020-07-03 | 全光谱白色发光装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US10685941B1 (zh) |
EP (2) | EP3997732A1 (zh) |
JP (2) | JP2022539889A (zh) |
CN (2) | CN114270511A (zh) |
WO (1) | WO2021007121A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10371325B1 (en) | 2018-06-25 | 2019-08-06 | Intematix Corporation | Full spectrum white light emitting devices |
US10685941B1 (en) | 2019-07-09 | 2020-06-16 | Intematix Corporation | Full spectrum white light emitting devices |
US11887973B2 (en) | 2019-07-09 | 2024-01-30 | Intematix Corporation | Full spectrum white light emitting devices |
JP7174266B2 (ja) * | 2020-06-30 | 2022-11-17 | 日亜化学工業株式会社 | 発光装置 |
KR20220094290A (ko) | 2020-12-28 | 2022-07-06 | 삼성전자주식회사 | 백색 발광장치 및 조명 장치 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4116260B2 (ja) | 2001-02-23 | 2008-07-09 | 株式会社東芝 | 半導体発光装置 |
WO2005004202A2 (en) * | 2003-06-24 | 2005-01-13 | Gelcore Llc | Full spectrum phosphor blends for white light generation with led chips |
TW200525779A (en) * | 2004-01-27 | 2005-08-01 | Super Nova Optoelectronics Corp | White-like light emitting device and its manufacturing method |
KR100927154B1 (ko) | 2005-08-03 | 2009-11-18 | 인터매틱스 코포레이션 | 실리케이트계 오렌지 형광체 |
KR101258227B1 (ko) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
WO2008087404A1 (en) | 2007-01-18 | 2008-07-24 | Brandon Medical Company Limited | Illumination device |
US8740400B2 (en) | 2008-03-07 | 2014-06-03 | Intematix Corporation | White light illumination system with narrow band green phosphor and multiple-wavelength excitation |
DE102008050643B4 (de) | 2008-10-07 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtmittel |
US20100289044A1 (en) | 2009-05-12 | 2010-11-18 | Koninklijke Philips Electronics N.V. | Wavelength conversion for producing white light from high power blue led |
JP5410342B2 (ja) | 2010-03-12 | 2014-02-05 | 星和電機株式会社 | 発光装置 |
JP4974310B2 (ja) | 2010-10-15 | 2012-07-11 | 三菱化学株式会社 | 白色発光装置及び照明器具 |
US9004705B2 (en) | 2011-04-13 | 2015-04-14 | Intematix Corporation | LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
JP5737096B2 (ja) | 2011-09-13 | 2015-06-17 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
EP3483496B1 (en) | 2011-11-07 | 2020-07-29 | Kabushiki Kaisha Toshiba | White light source and white light source system including the same |
US8884508B2 (en) | 2011-11-09 | 2014-11-11 | Cree, Inc. | Solid state lighting device including multiple wavelength conversion materials |
US8663502B2 (en) | 2011-12-30 | 2014-03-04 | Intematix Corporation | Red-emitting nitride-based phosphors |
DE202013012940U1 (de) | 2012-05-04 | 2023-01-19 | Soraa, Inc. | LED-Lampen mit verbesserter Lichtqualität |
US8597545B1 (en) | 2012-07-18 | 2013-12-03 | Intematix Corporation | Red-emitting nitride-based calcium-stabilized phosphors |
US8679367B2 (en) | 2012-08-09 | 2014-03-25 | Intematix Corporation | Green-emitting (oxy)nitride-based phosphors and light-emitting device using the same |
US10381527B2 (en) | 2014-02-10 | 2019-08-13 | Consumer Lighting, Llc | Enhanced color-preference LED light sources using yag, nitride, and PFS phosphors |
TWI599745B (zh) * | 2013-09-11 | 2017-09-21 | 晶元光電股份有限公司 | 可撓式發光二極體組件及發光二極體燈泡 |
JP2015126160A (ja) | 2013-12-27 | 2015-07-06 | サンケン電気株式会社 | 発光装置 |
KR102184381B1 (ko) | 2014-03-21 | 2020-11-30 | 서울반도체 주식회사 | 자외선 발광 다이오드를 이용한 발광 소자 및 이를 포함하는 조명장치 |
KR20160017849A (ko) | 2014-08-06 | 2016-02-17 | 서울바이오시스 주식회사 | 고출력 발광 장치 및 그 제조 방법 |
EP3194530A1 (en) | 2014-09-09 | 2017-07-26 | GE Lighting Solutions, LLC | Enhanced color-preference led light sources using yag, nitride, and pfs phosphors |
US9590149B2 (en) | 2014-10-10 | 2017-03-07 | Seoul Semiconductor Co., Ltd. | Lighting emitting device |
JP2016219519A (ja) * | 2015-05-18 | 2016-12-22 | サンケン電気株式会社 | 発光装置 |
KR102390624B1 (ko) | 2015-06-05 | 2022-04-26 | 오스텐도 테크놀로지스 인코포레이티드 | 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체 |
EP4243096A3 (en) * | 2015-06-24 | 2023-09-20 | Seoul Semiconductor Co., Ltd. | White light source system |
WO2017044380A1 (en) | 2015-09-10 | 2017-03-16 | Intematix Corporation | Phosphor converted white light emitting devices and photoluminescence compounds for general lighting and display backlighting |
US10479937B2 (en) | 2015-10-09 | 2019-11-19 | Intematix Corporation | Narrow band red phosphor |
WO2017131714A1 (en) | 2016-01-28 | 2017-08-03 | Ecosense Lighting Inc | Methods for generating melatonin-response-tuned white light with high color rendering |
KR20170109899A (ko) | 2016-03-22 | 2017-10-10 | 엘지이노텍 주식회사 | 발광소자 및 조명장치 |
TWI743622B (zh) * | 2017-06-26 | 2021-10-21 | 財團法人工業技術研究院 | 光源裝置 |
US10546843B2 (en) * | 2017-11-03 | 2020-01-28 | Ideal Industries Lighting Llc | White light emitting devices having high luminous efficiency and improved color rendering that include pass-through violet emissions |
US10685941B1 (en) | 2019-07-09 | 2020-06-16 | Intematix Corporation | Full spectrum white light emitting devices |
US10371325B1 (en) * | 2018-06-25 | 2019-08-06 | Intematix Corporation | Full spectrum white light emitting devices |
-
2019
- 2019-07-19 US US16/517,524 patent/US10685941B1/en active Active
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US10685941B1 (en) | 2020-06-16 |
EP3997733A1 (en) | 2022-05-18 |
CN114270511A (zh) | 2022-04-01 |
US11127721B2 (en) | 2021-09-21 |
US20210013185A1 (en) | 2021-01-14 |
US11574896B2 (en) | 2023-02-07 |
WO2021007121A1 (en) | 2021-01-14 |
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