CN114267940A - A millimeter-wave end-fire broadband circularly polarized double-ring array based on substrate-integrated waveguide - Google Patents

A millimeter-wave end-fire broadband circularly polarized double-ring array based on substrate-integrated waveguide Download PDF

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CN114267940A
CN114267940A CN202111472995.8A CN202111472995A CN114267940A CN 114267940 A CN114267940 A CN 114267940A CN 202111472995 A CN202111472995 A CN 202111472995A CN 114267940 A CN114267940 A CN 114267940A
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metal surface
metal
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millimeter
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CN114267940B (en
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王柯
张长虹
邵羽
雒江涛
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Chongqing University of Post and Telecommunications
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Abstract

本发明属于天线技术领域,具体涉及一种基于基片集成波导的毫米波端射宽带圆极化双环阵列;该双环阵列包括:上层金属面、介质基板、下层金属面以及开环辐射单元组,介质基板设置在上层金属面和下层金属面之间;在上层金属面上设置有金属面开槽;开环辐射单元组通过锥形平行双线分别与上层金属面和下层金属面连接;在毫米波端射宽带圆极化双环阵列上设置有第一金属化过孔和第二金属化过孔;将上层金属面、介质基板和下层金属面从右向左依次划分为GCPW结构、GCPW‑SIW结构和SIW结构;本发明为单层介质板结构,加工难度简单,成本低;对比现有技术,在结构简单的基础上保持了宽3dB轴比带宽和高增益,具有良好的经济效益。

Figure 202111472995

The invention belongs to the technical field of antennas, and in particular relates to a millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide; the double-ring array comprises: an upper metal surface, a dielectric substrate, a lower metal surface and an open-loop radiation unit group, The dielectric substrate is arranged between the upper metal surface and the lower metal surface; a metal surface slot is arranged on the upper metal surface; the open-loop radiation unit group is respectively connected with the upper metal surface and the lower metal surface through a conical parallel double line; The end-fire broadband circularly polarized double-ring array is provided with a first metallized via hole and a second metallized via hole; the upper metal surface, the dielectric substrate and the lower metal surface are sequentially divided into GCPW structure, GCPW‑SIW structure from right to left Structure and SIW structure; the invention is a single-layer dielectric plate structure, with simple processing difficulty and low cost; compared with the prior art, on the basis of a simple structure, it maintains a wide 3dB axial ratio bandwidth and high gain, and has good economic benefits.

Figure 202111472995

Description

Millimeter wave end-fire broadband circular polarization double-ring array based on substrate integrated waveguide
Technical Field
The invention belongs to the technical field of antennas, and particularly relates to a millimeter wave end-fire broadband circularly polarized double-ring array based on substrate integrated waveguide.
Background
Circularly polarized antennas have advantages in mobility, flexibility, weather penetration, and reduction of multipath interference. Millimeter waves have attracted much attention in many 5G applications because of their characteristics of short wavelength, high frequency, wide frequency band, etc. The planar endfire antenna has the characteristics of radiation characteristics parallel to the substrate, low profile and the like, and has huge application requirements in the fields of handheld RFID readers, Unmanned Aerial Vehicles (UAVs), automatic driving and the like. Therefore, in recent years, millimeter wave end-fire circular polarization antennas have received much attention from domestic and foreign scholars.
However, since the millimeter wave has the disadvantages of large propagation loss, short coverage distance, and the like, a high-gain millimeter wave antenna is urgently required. While planar endfire antennas typically suffer from low gain while achieving circular polarization. Therefore, how to realize a high-gain planar end-fire circular polarization antenna in a millimeter wave frequency band is a difficult problem facing today. An existing method for improving the gain of a millimeter wave end-fire circularly polarized antenna is to introduce an additional structure. The gain of the antenna was increased to 12dBic by introducing three dielectric rods, but the profile height of the antenna was increased. Another simpler and straightforward approach is widely adopted, namely to compose antenna arrays. The gain of the antenna is significantly improved by composing the antenna array, but the complex feed network occupies much space. In addition, the gain of the antenna is improved by introducing the reflecting metal block on the basis of a complex and huge feed network, but the overall height of the antenna is further increased. In summary, the existing schemes for increasing the gain of the millimeter wave end-fire circular polarization antenna, or introducing additional structures, or increasing the profile height and the complexity of the antenna, or using a large and complex feed network to form the antenna array, are not favorable for the simplification, miniaturization and integration of the millimeter wave end-fire circular polarization antenna.
Disclosure of Invention
In view of the above, the present invention provides a millimeter wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide, the double-ring array comprising: the radiation unit comprises an upper metal surface, a dielectric substrate, a lower metal surface and an open-loop radiation unit group, wherein the dielectric substrate is arranged between the upper metal surface and the lower metal surface; a metal surface slot is arranged on the upper metal surface; the open-loop radiation unit group is respectively connected with the upper layer metal surface and the lower layer metal surface through conical parallel double lines; a first metalized through hole and a second metalized through hole are formed in the millimeter wave end-fire broadband circular polarization double-ring array; the first metalized through hole penetrates through the upper-layer metal surface, the dielectric substrate and the lower-layer metal surface; the second metal via hole penetrates through the dielectric substrate.
Preferably, the upper metal surface slotting comprises a first upper metal surface strip and a second upper metal surface strip, the first upper metal surface strip and the second upper metal surface strip both comprise a straight line metal surface strip and an oblique line metal surface strip, and the straight line metal surface strip is connected with the oblique line metal surface strip.
Further, the upper-layer metal surface, the medium substrate and the lower-layer metal surface are sequentially divided into a GCPW structure, a GCPW-SIW structure and an SIW structure from right to left; the GCPW structure consists of a linear metal surface open strip with a groove on the upper metal surface, the upper metal surface of the corresponding part, a dielectric substrate, the lower metal surface and a first metalized through hole; the GCPW-SIW structure consists of an oblique line metal surface open strip of an upper layer metal surface groove, an upper layer metal surface of a corresponding part, a medium substrate, a lower layer metal surface and a first metalized through hole; the SIW structure consists of an upper layer metal surface which is not provided with an upper layer metal surface slot and corresponds to the upper layer metal surface, a dielectric substrate, a lower layer metal surface and a first metalized through hole which corresponds to the lower layer metal surface.
Preferably, the open-loop radiating element group comprises at least 1 open-loop radiating element, and the open-loop radiating element consists of two offset metal printing strips, two open-loop metal printing strips, two metal printing strips and two third metalized via holes; the upper offset metal printing strip is connected with the upper open-circuit metal printing strip, and the lower offset metal printing strip is connected with the lower open-circuit metal printing strip; one third metallized through hole penetrates through the joint of the upper metal printing strip and the upper open-circuit metal printing strip and the lower metal printing strip, and the other third metallized through hole penetrates through the joint of the lower metal printing strip and the lower open-circuit metal printing strip and the upper metal printing strip.
Furthermore, the open-loop radiating elements of the open-loop radiating element group are connected in series through a phase delay line.
Furthermore, the open-loop radiating unit group is rotationally symmetrical about the y axis by taking the central point of the open-loop radiating unit group as a fixed point, and the rotation angle is 180 degrees.
Furthermore, the upper metal surface and the lower metal surface are T-shaped.
Further, the first metal via holes are divided into an upper row of first metal via holes and a lower row of first metal via holes, wherein the first metal via holes on the left side of the upper row are located on the upper edges of the upper layer metal surface and the lower layer metal surface, and the first metal via holes on the right side of the upper row are arranged along the metal surface in a groove manner; the positions of the first metal through holes in the following rows are horizontally symmetrical to the positions of the first metal through holes in the upper rows.
Further, the second metal via holes are arranged on two sides of the conical parallel double lines.
Further, the millimeter wave end-fire broadband circularly polarized double-ring array further comprises a dielectric rod, and the shape of the dielectric rod is a round-corner cone or a triangular cone; the media bar is positioned substantially to the left of the media.
The invention has the beneficial effects that: the invention is a single-layer dielectric slab structure, the processing difficulty is simple, and the cost is low; the antenna array is of a single feed structure, and a series feed mode is adopted between two open-loop radiation units, compared with a feed network formed by cascading power dividers or a Butler matrix, the feed mode is simple, and the feed structure is compact; compared with the prior art, the broadband-3 dB axial ratio bandwidth and high gain are kept on the basis of simple structure, the working frequency band of the invention covers a millimeter wave communication frequency band (24.25-29.25GHz) distributed by the third generation partnership project (3GPP), and the broadband-3 dB axial ratio bandwidth-29.25 GHz millimeter wave broadband-based millimeter wave planar circuit has the advantages of simple structure, low section, wide axial ratio bandwidth and impedance bandwidth, simple feed network, convenience for manufacturing and integrating into a millimeter wave planar circuit and the like, and has good economic benefit.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention without limiting the invention in which:
FIG. 1 is a schematic perspective view of a bicyclic array of the present invention;
FIG. 2 is a top view of a dual ring array of the present invention;
FIG. 3 is a bottom view of the dual ring array of the present invention;
FIG. 4 is a graph of port reflection coefficient versus frequency for a preferred embodiment of the present invention;
FIG. 5 is a graph of axial ratio versus gain as a function of frequency for a preferred embodiment of the present invention;
FIG. 6 is a radiation pattern at a frequency of 26GHz according to a preferred embodiment of the present invention;
FIG. 7 is a radiation pattern at 28GHz according to a preferred embodiment of the present invention;
FIG. 8 is a radiation pattern at a frequency of 30GHz in accordance with a preferred embodiment of the present invention;
in the figure: 1. an upper metal surface; 2. a dielectric substrate; 3. a lower metal surface; 4. a GCPW port; 5. slotting the upper metal surface; 51. stripping a first upper metal surface; 52. stripping the second upper metal surface; 6. tapered parallel double lines; 7. a phase delay line; 8. offsetting the metal print bar; 9. an open metal print bar; 10. a metal printing bar; 11. a first metallized via; 12. a second metallized via; 13. a third metallized via; 14. a dielectric rod.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a millimeter wave end-fire broadband circular polarization double-ring array based on a substrate integrated waveguide, as shown in figure 1, the array comprises: the radiation device comprises an upper-layer metal surface 1, a dielectric substrate 2, a lower-layer metal surface 3 and an open-loop radiation unit group, wherein the dielectric substrate 2 is arranged between the upper-layer metal surface 1 and the lower-layer metal surface 3; a metal surface slot 5 is arranged on the upper metal surface 1; the open-loop radiation unit group is respectively connected with the upper-layer metal surface 1 and the lower-layer metal surface 3 through conical parallel double lines 6; a first metalized through hole 11 and a second metalized through hole 12 are arranged on the millimeter wave end-fire broadband circular polarization double-ring array; the first metalized through hole 11 penetrates through the upper-layer metal surface 1, the dielectric substrate 2 and the lower-layer metal surface 3; the second metal via hole 12 penetrates through the dielectric substrate 2; .
Preferably, the upper metal surface groove 5 includes a first upper metal surface open strip 51 and a second upper metal surface open strip 52, both the first upper metal surface open strip 51 and the second upper metal surface open strip 52 include a straight metal surface open strip and an oblique line metal surface open strip, wherein the straight metal surface open strip is connected with the oblique line metal surface open strip; the upper layer metal surface slot 5 is in a splayed shape, the GCPW port 4 is positioned between the first upper layer metal surface open strip 51 and the second upper layer metal surface open strip 52, and the GCPW port 4 is used for feeding the double-ring array.
Further, the upper metal surface 1, the dielectric substrate 2 and the lower metal surface 3 are sequentially divided into a GCPW structure, a GCPW-SIW structure and an SIW structure from right to left; the GCPW structure consists of a linear metal surface open strip of an upper metal surface slot 5, an upper metal surface 1, a dielectric substrate 2, a lower metal surface 3 and a first metalized through hole 11 which correspond to the linear metal surface open strip; the GCPW-SIW structure consists of an oblique line metal surface open strip of an upper layer metal surface slot 5, an upper layer metal surface 1 of a corresponding part, a medium substrate 2, a lower layer metal surface 3 and a first metalized through hole 11; the SIW structure is composed of an upper metal surface 1 which is not provided with an upper metal surface slot 5 and corresponds to the upper metal surface, a dielectric substrate 2, a lower metal surface 3 and a first metalized through hole 11 which corresponds to the lower metal surface.
Preferably, the open-loop radiating element group comprises at least 1 open-loop radiating element, and the open-loop radiating element comprises two offset metal printing strips 8, two open-loop metal printing strips 9, two metal printing strips 10 and two third metalized via holes 13; the upper offset metal printing strip 8 is connected with the upper open circuit metal printing strip 9, and the lower offset metal printing strip 8 is connected with the lower open circuit metal printing strip 9; one third metalized via 13 penetrates through the joint of the upper metal printing strip 8 and the upper open-circuit metal printing strip 9 and the lower metal printing strip 10, and the other third metalized via 13 penetrates through the joint of the lower metal printing strip 8 and the lower open-circuit metal printing strip 9 and the upper metal printing strip 10.
Further, the open-loop radiating elements of the open-loop radiating element group are connected in series through a phase delay line 7.
Furthermore, the open-loop radiating unit group is rotationally symmetrical about the y axis by taking the central point of the open-loop radiating unit group as a fixed point, and the rotation angle is 180 degrees.
Further, the upper metal surface 1 and the lower metal surface 3 are T-shaped.
Further, the first metal via 11 is divided into an upper row of first metal vias and a lower row of first metal vias, wherein the first metal vias on the left side of the upper row are located at the upper edges of the upper layer metal surface 1 and the lower layer metal surface 3, and the first metal vias on the right side of the upper row are arranged along the metal surface open groove 5; the positions of the first metal through holes in the following rows are horizontally symmetrical to the positions of the first metal through holes in the upper rows.
Further, second metal vias 12 are arranged on both sides of the tapered parallel double lines 6; because the through hole is provided with a metal ring with the diameter of about 0.2mm, the second metal through hole 12 is used for shielding parasitic radiation from the substrate integrated waveguide SIW structure and the open end of the tapered parallel double-wire 6, and the axial ratio characteristic of the double-ring antenna array is improved.
Further, the millimeter wave end-fire broadband circularly polarized double-ring array further comprises a dielectric rod 14, and the shape of the dielectric rod 14 is a round-corner cone shape or a triangular cone shape; the media bar 14 is positioned to the left of the media base 2; optionally, the dielectric rod 14 and the dielectric substrate 2 are made of the same material; the dielectric rods are arranged in the end-fire direction of the double-ring array and used for improving the gain of the end-fire antenna array. Optionally, the thickness of the dielectric substrate 2 is 1.5-1.6 mm; preferably, the dielectric substrate 2 has a thickness of 1.575 mm.
The top view and the bottom view of the present invention are shown in fig. 2 and 3, respectively, and preferably, the dimensions of a preferred embodiment of the present invention are as follows:
Figure BDA0003388125520000061
simulation results of the preferred embodiment are shown in fig. 4-8, where fig. 4 shows that the impedance bandwidth of the antenna of the present invention is 8GHz relative to the center frequency of 27GHz relative to the bandwidth of 29.6%, and the frequency range is 23.7GHz to 31.7 GHz; FIG. 5 shows that the 3dB axial ratio bandwidth of the antenna array of the present invention is 6.7GHz relative to the center frequency 27GHz relative bandwidth is 24.8%, with the frequency range from 23.8GHz to 30.5 GHz. The radiation gain was 10.5dBi at 26GHz, 10.9dBi at 28GHz, and 11.2dBi at 30 GHz; fig. 6, 7 and 8 show that the main polarization modes of the antenna array of the invention are left-handed circular polarizations at three frequency points, 26GHz, 28GHz and 30 GHz. And the 3dB lobe widths of 3 frequency points of the far-field radiation directional diagram of the antenna array in an XOY plane are respectively as follows: 37.2 °, 32.4 °, and 28.5 °; the 3dB lobe widths of 3 frequency points in the YOZ plane are respectively as follows: 57.8 °, 45.2 °, and 40.2 °.
The invention is a single-layer dielectric slab structure, the processing difficulty is simple, and the cost is low; the antenna array is of a single feed structure, and a series feed mode is adopted between two open-loop radiation units, compared with a feed network formed by cascading power dividers or a Butler matrix, the feed mode is simple, and the feed structure is compact; compared with the prior art, the broadband-3 dB axial ratio bandwidth and high gain are kept on the basis of simple structure, the working frequency band of the invention covers a millimeter wave communication frequency band (24.25-29.25GHz) distributed by the third generation partnership project (3GPP), and the broadband-3 dB axial ratio bandwidth-29.25 GHz millimeter wave broadband-based millimeter wave planar circuit has the advantages of simple structure, low section, wide axial ratio bandwidth and impedance bandwidth, simple feed network, convenience for manufacturing and integrating into a millimeter wave planar circuit and the like, and has good economic benefit.
In the description of the present invention, it is to be understood that the terms "left", "right", "upper", "lower", "both sides", "center", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
The above-mentioned embodiments, which further illustrate the objects, technical solutions and advantages of the present invention, should be understood that the above-mentioned embodiments are only preferred embodiments of the present invention, and should not be construed as limiting the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1.一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,包括:上层金属面(1)、介质基板(2)、下层金属面(3)以及开环辐射单元组,介质基板(2)设置在上层金属面(1)和下层金属面(3)之间;在上层金属面(1)上设置有金属面开槽(5);开环辐射单元组通过锥形平行双线(6)分别与上层金属面(1)和下层金属面(3)连接;在毫米波端射宽带圆极化双环阵列上设置有第一金属化过孔(11)和第二金属化过孔(12);其中,第一金属化过孔(11)贯穿上层金属面(1)、介质基板(2)以及下层金属面(3);第二金属过孔(12)贯穿介质基板(2)。1. A millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide, is characterized in that, comprising: upper metal surface (1), dielectric substrate (2), lower metal surface (3) and open-loop radiation In the unit group, the dielectric substrate (2) is arranged between the upper metal surface (1) and the lower metal surface (3); the upper metal surface (1) is provided with a metal surface slot (5); the open-loop radiation unit group passes through Conevant parallel dual -line (6) connects to the upper metal surface (1) and the lower metal surface (3); the first metalized over -metal over -metal overcire array is set on the millimeter -end -end radio round polarization double array (11) and the first one (11) and first Two metallized vias (12); wherein the first metallized vias (11) penetrate the upper metal surface (1), the dielectric substrate (2) and the lower metal surface (3); the second metal vias (12) penetrate through A dielectric substrate (2). 2.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,上层金属面开槽(5)包括第一上层金属面开条(51)和第二上层金属面开条(52),第一上层金属面开条(51)和第二上层金属面开条(52)均包括直线金属面开条和斜线金属面开条,其中直线金属面开条与斜线金属面开条连接。2. a kind of millimeter-wave end-fire broadband circularly polarized double-ring array based on substrate integrated waveguide according to claim 1, is characterized in that, the upper metal surface slot (5) comprises the first upper metal surface slot (51 ) and the second upper metal surface strip (52), the first upper metal surface strip (51) and the second upper metal surface strip (52) both include straight metal surface strips and oblique metal surface strips, wherein The straight metal surface openings are connected with the oblique metal surface openings. 3.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,将上层金属面(1)、介质基板(2)和下层金属面(3)从右向左依次划分为GCPW结构、GCPW-SIW结构和SIW结构;其中,GCPW结构由上层金属面开槽(5)的直线金属面开条与其对应部分的上层金属面(1)、介质基板(2)、下层金属面(3)以及第一金属化过孔(11)共同组成;GCPW-SIW结构由上层金属面开槽(5)的斜线金属面开条与其对应部分的上层金属面(1)、介质基板(2)、下层金属面(3)以及第一金属化过孔(11)共同组成;SIW结构由未设置上层金属面开槽(5)所对应的上层金属面(1)、介质基板(2)以及下层金属面(3)和该部分对应的第一金属化过孔(11)组成。3. A kind of millimeter-wave end-fire broadband circularly polarized double-ring array based on substrate-integrated waveguide according to claim 1, wherein the upper metal surface (1), the dielectric substrate (2) and the lower metal surface ( 3) It is divided into GCPW structure, GCPW-SIW structure and SIW structure in turn from right to left; wherein, the GCPW structure is divided into the upper metal surface (1), The dielectric substrate (2), the lower metal surface (3) and the first metallized via hole (11) are composed together; the GCPW-SIW structure is composed of the slanted metal surface slits of the upper metal surface slot (5) and the corresponding part of the upper layer The metal surface (1), the dielectric substrate (2), the lower metal surface (3) and the first metallized via hole (11) are composed together; the SIW structure is composed of the upper metal surface corresponding to the upper metal surface slot (5) is not provided (1), a dielectric substrate (2), a lower metal surface (3) and a first metallized via hole (11) corresponding to the part. 4.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,开环辐射单元组包括至少1个开环辐射单元,开环辐射单元由两条偏移金属印刷条(8)、两条开路金属印刷条(9)、两条金属印刷条(10)以及两个第三金属化过孔(13)组成;上偏移金属印刷条(8)与上开路金属印刷条(9)连接,下偏移金属印刷条(8)与下开路金属印刷条(9)连接;一个第三金属化过孔(13)贯穿上金属印刷条(8)与上开路金属印刷条(9)的连接处和下金属印刷条(10),另一个第三金属化过孔(13)贯穿下金属印刷条(8)与下开路金属印刷条(9)的连接处和上金属印刷条(10)。4. A millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide according to claim 1, wherein the open-loop radiating element group comprises at least one open-loop radiating element, and the open-loop radiating element It consists of two offset metal printing strips (8), two open metal printing strips (9), two metal printing strips (10) and two third metallized vias (13); the upper offset metal printing strip (8) is connected to the upper open-circuit metal printing strip (9), and the lower offset metal printing strip (8) is connected to the lower open-circuit metal printing strip (9); a third metallized via hole (13) penetrates the upper metal printing strip ( 8) The connection with the upper open metal printing strip (9) and the lower metal printing strip (10), another third metallized via (13) penetrates the lower metal printing strip (8) and the lower open metal printing strip (9) ) and the upper metal printing strip (10). 5.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,开环辐射单元组的开环辐射单元之间通过相位延迟线(7)串行连接。5. a kind of millimeter-wave end-fire broadband circularly polarized double-ring array based on substrate integrated waveguide according to claim 1, is characterized in that, between the open-loop radiation units of the open-loop radiation unit group, the phase delay line (7 ) serial connection. 6.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,开环辐射单元组以开环辐射单元组中心点为定点,关于y轴旋转对称,旋转角为180度。6. A kind of millimeter-wave end-fire broadband circularly polarized double-ring array based on substrate integrated waveguide according to claim 1, it is characterized in that, the open-loop radiation unit group takes the center point of the open-loop radiation unit group as a fixed point, and about y The axis is rotationally symmetrical, and the rotation angle is 180 degrees. 7.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,上层金属面(1)和下层金属面(3)为T形。7. A millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide according to claim 1, wherein the upper metal surface (1) and the lower metal surface (3) are T-shaped. 8.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,第一金属过孔(11)分为上列第一金属过孔和下列第一金属过孔,其中上列左侧的第一金属过孔位于上层金属面(1)和下层金属面(3)的上边沿,上列右侧的第一金属过孔沿着金属面开槽(5)设置;下列第一金属过孔位置与上列第一金属过孔的位置水平对称。8. A millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide according to claim 1, wherein the first metal via (11) is divided into the first metal via and the The following first metal vias, where the first metal vias on the left side of the upper row are located on the upper edges of the upper metal surface (1) and the lower metal surface (3), and the first metal vias on the right side of the upper row are located along the metal surface Slots (5) are provided; the positions of the following first metal vias are horizontally symmetrical with the positions of the above first metal vias. 9.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,第二金属过孔(12)排列在锥形平行双线(6)两侧。9. A millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate-integrated waveguide according to claim 1, wherein the second metal vias (12) are arranged on the tapered parallel double lines (6) sides. 10.根据权利要求1所述的一种基于基片集成波导的毫米波端射宽带圆极化双环阵列,其特征在于,毫米波端射宽带圆极化双环阵列还包括介质棒(14),介质棒(14)的形状为圆角锥形或三角锥形;将介质棒(14)设置在介质基板(2)的左侧。10. A millimeter-wave end-fire broadband circularly polarized double-ring array based on a substrate integrated waveguide according to claim 1, wherein the millimeter-wave end-fire broadband circularly polarized double-ring array further comprises a dielectric rod (14), The shape of the dielectric rod (14) is a rounded pyramid or a triangular pyramid; the dielectric rod (14) is arranged on the left side of the dielectric substrate (2).
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