CN114260820A - Polishing head and polishing equipment - Google Patents
Polishing head and polishing equipment Download PDFInfo
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- CN114260820A CN114260820A CN202111660083.3A CN202111660083A CN114260820A CN 114260820 A CN114260820 A CN 114260820A CN 202111660083 A CN202111660083 A CN 202111660083A CN 114260820 A CN114260820 A CN 114260820A
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Abstract
The embodiment of the invention discloses a polishing head and polishing equipment, wherein the polishing head comprises: a head main body; a rubber pad attached to a lower surface of the head main body, the rubber pad being configured to be elastically deformable downward based on a working pressure from the head main body; the die pad is positioned between the rubber pad and the silicon wafer to be polished, and the shape of the upper surface of the die pad is set to enable the upper surface of the die pad to be matched with the elastic deformation of the rubber pad when the polishing head polishes the silicon wafer, so that the working pressure borne by the upper surface of the silicon wafer is uniform.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing head and polishing equipment.
Background
In the process of producing silicon wafers, a Final Polishing (FP) process is the last process for controlling the flatness and roughness parameters of the silicon wafers. The final polishing process is to remove the defects of the front-end process and mirror-like polish the surface of the silicon wafer by removing a certain amount of the surface of the silicon wafer.
The most common embodiment during FP operations is the Chemical Mechanical Polishing (CMP) process, in which a silicon wafer is pressed by a Polishing head against a vibrating Polishing table with a Polishing pad while a slurry of abrasive particles is supplied to the Polishing pad. However, since the working pressure from the polishing head tends to be concentrated on the central region of the polishing head, the distribution of the working pressure transmitted to the surface of the silicon wafer to be polished is also uneven, wherein the force received by the central region of the silicon wafer is greater than the force received by the other regions, which causes the polishing removal amount of the central region of the surface of the silicon wafer to be greater than that of the edge region of the surface of the silicon wafer during the polishing of the silicon wafer, thereby causing the surface flatness of the silicon wafer to deteriorate.
Disclosure of Invention
In view of the above, embodiments of the present invention are directed to a polishing head and a polishing apparatus, which can polish a silicon wafer under a uniform working pressure, thereby improving the planarization quality of the silicon wafer.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a polishing head, including: a head main body; a rubber pad attached to a lower surface of the polishing head, the rubber pad being configured to be elastically deformable downward based on a working pressure from the head main body; the die pad is positioned between the rubber pad and the silicon wafer to be polished, and the shape of the upper surface of the die pad is set to enable the upper surface of the die pad to be matched with the elastic deformation of the rubber pad when the polishing head polishes the silicon wafer, so that the working pressure borne by the upper surface of the silicon wafer is uniform.
In a second aspect, an embodiment of the present invention provides a polishing apparatus including the polishing head according to the first aspect.
The embodiment of the invention provides a polishing head and polishing equipment; the polishing head is additionally provided with the die pad between the rubber pad and the silicon wafer, the upper surface of the die pad is in the shape of elastic deformation of the adaptive rubber pad, so that the working pressure can be uniformly transmitted to the whole upper surface of the silicon wafer below the die pad, the silicon wafer is pressed on the polishing pad under uniform working pressure, the uniform polishing removal amount on the surface of the silicon wafer is realized, and the surface flatness of the silicon wafer is improved.
Drawings
FIG. 1 is a schematic view of a conventional polishing apparatus;
FIG. 2 is a graph of the removal profile of a silicon wafer after polishing using conventional polishing equipment;
FIG. 3 is a schematic diagram of a polishing head provided by an embodiment of the present invention;
FIG. 4 is a top and front view of a mold pad provided in accordance with another embodiment of the present invention;
FIG. 5 is a top and front view of a mold pad provided in accordance with another embodiment of the present invention;
FIG. 6 is a top and front view of a mold pad provided in accordance with another embodiment of the present invention;
FIG. 7 is a schematic illustration of a polishing head provided in accordance with another embodiment of the present invention;
fig. 8 is a schematic view of a polishing apparatus provided in an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
After the silicon wafer is processed by the DSP process, fine damage is usually left on the surface. To remove the damage, and to make the wafer mirror-like and to continuously improve the flatness, the FP operation is usually performed. In the conventional FP operation, a Polishing Head (Polishing Head) loaded with a silicon wafer is brought into contact with the surface of a Polishing pad stuck on a lower surface plate, and the surface of the silicon wafer is polished by a chemical reaction between a Colloidal slurry (Colloidal slurry) and chemicals (chemicals) supplied from a slurry Tube (slurry Tube) and by the influence of a physical reaction caused by mechanical pressurization.
Specifically, the silicon wafer which completes the DSP process is placed into a cleaning machine, and then FP operation is required to be performed after the silicon wafer is discharged from the cleaning machine, wherein the complete FP operation flow comprises three polishing operations, which are as follows: firstly, carrying out a first FP step, which can also be called a rough Polishing (Stock Polishing) step, on a silicon wafer, wherein the step is used for removing surface defects of the silicon wafer caused by a previous process and manufacturing the silicon wafer into a mirror surface state; this step is used to adjust the flatness of the abrasive particles (particles) and the entire wafer surface during the operation. The rough polishing step is followed by a second FP step that adjusts the abrasive grains to adjust the roughness of the wafer surface by using a minimum amount of grinding. After the second FP step is completed, a third FP step is performed to adjust micro roughness (micro roughness) and fine particles (fine particles) of the surface of the silicon wafer and to complete the finalizing work. After the FP operation of the above 3 steps is completed, the silicon wafer is subjected to simple surface cleaning in the apparatus, and finally placed in a blanking cassette (unloading cassette), and a waiting process is performed until the blanking cassette is filled with the silicon wafer.
For the first FP step in the above work flow, i.e. the rough polishing step, during the work, a conventional polishing apparatus 10 for performing the step is shown in fig. 1, and the apparatus 10 may include: a polishing table 11, a polishing pad 12 attached to the upper surface of the polishing table 11 by bonding or the like, and a drive shaft 13 provided below the polishing table 11. The polishing table 11 can be rotated by the drive shaft 13, and thus the polishing pad 12 can also be rotated corresponding to the rotation of the polishing table 11. For example, when the drive shaft 13 rotates in the clockwise direction, the polishing table 11 rotates in the clockwise direction together with the polishing pad 12. Further, a polishing head 14 is provided in a space above the polishing table 11, and the polishing head 14 may include at least: a Head main body (Head)141, a rotary driving member 142 connected to the Head main body (Head)141 by a fastening member, an assembly mold 143 below the Head main body 141, a rubber pad 144 and a silicon wafer S to be polished are received in a first receiving cavity CS1 formed by the assembly mold 143, wherein the rubber pad 144 is connected to the Head main body 141, and a vacuum/air tube 145 is used to supply Compressed Dry Air (CDA) into the first receiving cavity CS1 of the assembly mold 143 to form a working pressure, which acts on the rubber pad 144 and is transmitted to the silicon wafer S to be polished via the rubber pad 144. It should be noted that the rotary driving member 142 can rotate the head main body 141, so that the head main body 141 and the silicon wafer S to be polished in the first accommodating cavity CS1 of the assembly mold 143 can also rotate corresponding to the rotation of the head main body 141. For example, when the rotary drive 142 rotates in the counterclockwise direction, the head main body 141 and the silicon wafer S to be polished are rotated in the counterclockwise direction together. It will be appreciated that the directions of rotation of the drive shaft 13 and the rotary drive 142 may or may not be the same. In addition, the apparatus 10 may further include a nozzle 15 disposed in the space above the polishing pad 12 and near the center of the polishing pad 12, and the nozzle 15 may be connected to a storage tank (not shown in fig. 1) for storing the polishing liquid, and the dropping flow rate of the polishing liquid is controlled by a valve.
When a polishing operation is performed, the rotating polishing head 14 is pressed against the rotating polishing pad 12 with a certain working pressure, a polishing solution composed of submicron or nanometer abrasive particles and a chemical solution is dropped onto the polishing pad 12 through the nozzle 15, flows between the surface of the silicon wafer S and the polishing pad 12, and then is uniformly distributed on the polishing pad 12 by the transmission and centrifugal force of the polishing pad 12, thereby forming a polishing solution liquid film between the silicon wafer S and the polishing pad 12. Chemical components in the polishing solution and the surface material of the silicon wafer generate chemical reaction, insoluble substances are converted into soluble substances, or substances with high hardness are softened, then the chemical reactants are removed from the surface of the silicon wafer through the micro-mechanical friction effect of abrasive particles and dissolved in flowing liquid to be taken away, namely, the purpose of planarization is realized in the alternate process of chemical film forming and mechanical film removing.
In addition, in order to facilitate the distribution of the polishing liquid on the polishing pad, the apparatus 10 may further include a vibrator 16 disposed on the polishing table 11, the vibrator 16 being configured to vibrate the polishing table to help adjust the distribution of the polishing liquid. Furthermore, in order to be able to adjust the distribution of the polishing liquid in time as required, the apparatus 10 further comprises a transmission 17 for controlling the rotational speed of the drive shaft 13 to adjust the rotational speed of the polishing table 11.
However, in the above polishing operation, since the working pressure is concentrated on the central region of the rubber pad 144, the entire rubber pad 144 in a stressed state takes a concave arc shape, which results in that the rubber pad 144 cannot uniformly transmit the working pressure to the entire surface, and the edge portion of the rubber pad 144 may not even act on the silicon wafer, that is, cannot transmit the working pressure to the edge region of the silicon wafer, which makes the polishing removal amount of the edge region of the silicon wafer surface smaller than that of the central region of the silicon wafer surface, and the unevenness of the polishing removal amount eventually causes the flatness of the silicon wafer surface to deteriorate. For example, referring to fig. 2, there is shown a removal profile of a silicon wafer polished using a conventional polishing apparatus, wherein a curve represents an approximation of the amount of polishing removal for a corresponding portion of the silicon wafer located below the curve, and the numerical values below the silicon wafer represent the amount of polishing removal for the corresponding portion of the silicon wafer. If the depth of the defect in the incoming material itself is large, the amount of removal of the final polishing process needs to be increased, and the flatness is further deteriorated.
In order to improve the flatness of the polished silicon wafer surface, the embodiment of the present invention proposes to improve the structure of the polishing head to transmit a uniform working pressure to the silicon wafer surface to improve the morphological parameters of the polished silicon wafer, and based on this, referring to fig. 3, it shows a polishing head 20 provided by the embodiment of the present invention, the polishing head 20 can replace the polishing head 14 in fig. 1 and can transmit the uniform working pressure to the silicon wafer, so that the silicon wafer is polished under the uniform working pressure, thereby improving the flatness of the polished silicon wafer.
As shown in fig. 3, the polishing head 20 includes: a head main body 141; a rubber pad 144 attached to a lower surface of the head main body 141, the rubber pad 144 being configured to be elastically deformable downward based on a working pressure from the head main body 141; the die pad 21 is positioned between the rubber pad 144 and the silicon wafer S to be polished, and the upper surface of the die pad 21 is shaped so that when the polishing head 20 polishes the silicon wafer S, the upper surface of the die pad 21 can adapt to the elastic deformation of the rubber pad 144, so that the working pressure borne by the upper surface of the silicon wafer is uniform.
The embodiment of the present invention provides a polishing head 20; unlike the polishing head 14 shown in fig. 1, the polishing head 20 illustrated in fig. 3 adds the mold pad 21 between the rubber pad 144 and the silicon wafer S, and the upper surface of the mold pad 21 has a shape adapted to the elastic deformation of the rubber pad 144, so that the working pressure can be uniformly transmitted to the entire upper surface of the silicon wafer S located below the mold pad 21, whereby the silicon wafer S is pressed against the polishing pad 12 with uniform working pressure, a uniform polishing removal amount of the silicon wafer surface is achieved, and the silicon wafer surface flatness is improved.
As described hereinabove, in the polishing process, in the case where the die pad 21 is not provided, such as the polishing head 14 shown in fig. 1, the rubber pad 144 will act on the silicon wafer S, however, since the rubber pad 144 may not be completely fitted to the surface shape of the silicon wafer S after being elastically deformed, for example, it may happen that only the central portion of the rubber pad 144 acts on the silicon wafer S with a gap between the edge portion of the rubber pad 144 and the silicon wafer S, as shown in fig. 1. In view of this, it is preferable that the upper surface of the die pad 21 has a concave arc shape, referring to fig. 3 and 4, wherein the thickness of the die pad 21 becomes thicker gradually from the center to the edge, whereby the die pad 21 can fill up the gap between the rubber pad 144 after elastic deformation and the silicon wafer S, so that the working pressure can be uniformly transmitted to the entire surface of the silicon wafer S.
For a specific implementation form of the die pad 21, the die pad 21 may be integrally formed according to an embodiment of the present invention, as shown in fig. 4. As another embodiment of the present invention, the die pad 21 may be separately formed and then combined together. For example, referring to fig. 5, the die pad 21 may include a first portion 211 and a second portion 212, wherein the first portion 211 has a ring shape with a flat bottom surface and a thickness gradually increasing from a center to an outer side in a radial direction, the second portion 212 has a solid disk shape, and the first portion 211 may be adhered to one of the circular surfaces of the second portion 212 through the bottom surface to form a whole.
In order to make the polishing head 20 provided by the embodiment of the present invention more cost-effective, preferably, referring to fig. 6, the die pad 21 may have a through hole 213 in the center so that the rubber pad 144 can act on the upper surface of the silicon wafer S at least partially through the through hole 213 when the elastic deformation occurs, and thus, the maximum thickness of the die pad 21 may be set small as long as the die pad 21 can cooperate in shape with the rubber pad 144 after the deformation to together constitute a whole body capable of uniformly transmitting the working pressure to the entire surface of the silicon wafer S.
In order to prevent the silicon wafer S from being displaced relative to the polishing head 20 during the polishing process, it is preferable that the silicon wafer be stuck to the lower surface of the die pad 21.
According to another preferred embodiment of the present invention, referring to fig. 3, the polishing head further includes an annular assembly mold 143 attached to the lower surface of the head body 141, an inner peripheral surface of the assembly mold 143 and the lower surface of the head body 141 together defining a first receiving space CS1, the rubber pad 144, the mold pad 21 and the silicon wafer S being received in the first receiving space CS1 when the polishing head polishes the silicon wafer to ensure that the head body and the silicon wafer are axially aligned.
According to still another preferred embodiment of the present invention, referring to fig. 7, the polishing head 20 further includes an assembly mold 143 attached to the lower surface of the head body 141, the inner peripheral surface of the assembling die 143 and the lower surface of the head main body 141 together define a first receiving space CS1, the rubber pad 144 is received in the first receiving space CS1, the die pad 21 is attached to the lower surface of the assembling die 143, and the die pad 21 has a circumferential flange 214 extending downwardly from the edge of the lower surface of the die pad 21, the inner peripheral surface of the peripheral flange 214 and the lower surface of the die pad 21 together define a second accommodation space CS2, when the polishing head 20 polishes the silicon wafer S, the silicon wafer S is accommodated in the second accommodation space CS2 to ensure that the head body 141 and the silicon wafer S are axially aligned.
To accommodate different applications, the diameter and thickness of the die pad 21 are preferably set according to the magnitude of the working pressure.
Specifically, the die pad 21 may be configured to have different dimensions, such as diameter and thickness, for different operating pressure ranges to better function in transmitting uniform operating pressure to the silicon wafer. As an example of the present invention, when the working pressure of the polishing head is between 3Kpa to 18Kpa, the working pressure may be divided into four ranges, i.e., 3Kpa to 7Kpa, 7Kpa to 11Kpa, 11Kpa to 15Kpa, and 15Kpa to 18Kpa, and different specifications of the die pad may be set for the four ranges, for example, in the case where the working pressure is in the range of 3Kpa to 7Kpa, the overall thickness of the die pad 21 may be set to about 5mm and the width may be set in the range of 50mm to 100 mm.
Since the die pad 21 serves to balance the uneven pressure introduced from the rubber pad 144, it is preferable that the die pad 21 is made of epoxy resin.
Referring to fig. 8, an embodiment of the present invention further provides a polishing apparatus 30, and compared with the polishing apparatus 10 shown in fig. 1, the polishing apparatus 30 includes the polishing head 20 according to the above.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A polishing head, comprising:
a head main body;
a rubber pad attached to a lower surface of the head main body, the rubber pad being configured to be elastically deformable downward based on a working pressure from the head main body;
the die pad is positioned between the rubber pad and the silicon wafer to be polished, and the shape of the upper surface of the die pad is set to enable the upper surface of the die pad to be matched with the elastic deformation of the rubber pad when the polishing head polishes the silicon wafer, so that the working pressure borne by the upper surface of the silicon wafer is uniform.
2. The polishing head as set forth in claim 1 wherein the upper surface of the die pad is concavely curved, wherein the die pad has a thickness that gradually increases from the center to the edge.
3. The polishing head as set forth in claim 2 wherein the die pad has a centrally located through hole such that the rubber pad can act on the upper surface of the silicon wafer at least partially through the through hole when the elastic deformation occurs.
4. The polishing head as set forth in claim 1 wherein the silicon wafer is adhered to a lower surface of the mold pad.
5. The polishing head according to any one of claims 1 to 4, wherein the polishing head further comprises an annular assembly mold attached to the lower surface of the head body, an inner peripheral surface of the assembly mold and the lower surface of the head body collectively defining a first accommodation space in which the rubber pad, the mold pad and the silicon wafer are accommodated to ensure that the head body and the silicon wafer are axially aligned when the polishing head polishes the silicon wafer.
6. The polishing head according to any one of claims 1 to 4, further comprising an annular assembly mold attached to a lower surface of the head body, an inner peripheral surface of the assembly mold and the lower surface of the head body together defining a first accommodation space in which the rubber pad is accommodated,
the die pad is attached to a lower surface of the assembly die, and the die pad has a circumferential flange extending downward from an edge of a lower surface of the die pad, an inner circumferential surface of the circumferential flange and the lower surface of the die pad together defining a second accommodation space,
when the polishing head polishes the silicon wafer, the silicon wafer is accommodated in the second accommodation space to ensure that the head body and the silicon wafer are axially aligned.
7. The polishing head according to claim 2 or 3, wherein the diameter and the thickness of the die pad are set according to the magnitude of the working pressure.
8. The polishing head according to any one of claims 1 to 4, wherein the mold pad is made of epoxy.
9. A polishing apparatus characterized by comprising a polishing head according to any one of claims 1 to 8.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111660083.3A CN114260820A (en) | 2021-12-30 | 2021-12-30 | Polishing head and polishing equipment |
| TW111131443A TWI829299B (en) | 2021-12-30 | 2022-08-22 | Polishing heads and polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111660083.3A CN114260820A (en) | 2021-12-30 | 2021-12-30 | Polishing head and polishing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN114260820A true CN114260820A (en) | 2022-04-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111660083.3A Pending CN114260820A (en) | 2021-12-30 | 2021-12-30 | Polishing head and polishing equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114260820A (en) |
| TW (1) | TWI829299B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114649245A (en) * | 2022-05-19 | 2022-06-21 | 西安奕斯伟材料科技有限公司 | Device for bearing and cleaning silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020039879A1 (en) * | 2000-07-11 | 2002-04-04 | Zuniga Steven M. | Carrier head with flexible membranes to provide controllable pressure and loading area |
| US6494774B1 (en) * | 1999-07-09 | 2002-12-17 | Applied Materials, Inc. | Carrier head with pressure transfer mechanism |
| US20110097974A1 (en) * | 2009-10-28 | 2011-04-28 | Siltronic Ag | Method for polishing a semiconductor wafer |
| CN111590463A (en) * | 2019-02-01 | 2020-08-28 | 株式会社 V 技术 | Polishing head, polishing apparatus, and polishing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101063432B1 (en) * | 2003-02-10 | 2011-09-07 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate Holding Device and Polishing Device |
-
2021
- 2021-12-30 CN CN202111660083.3A patent/CN114260820A/en active Pending
-
2022
- 2022-08-22 TW TW111131443A patent/TWI829299B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6494774B1 (en) * | 1999-07-09 | 2002-12-17 | Applied Materials, Inc. | Carrier head with pressure transfer mechanism |
| US20020039879A1 (en) * | 2000-07-11 | 2002-04-04 | Zuniga Steven M. | Carrier head with flexible membranes to provide controllable pressure and loading area |
| US20110097974A1 (en) * | 2009-10-28 | 2011-04-28 | Siltronic Ag | Method for polishing a semiconductor wafer |
| CN111590463A (en) * | 2019-02-01 | 2020-08-28 | 株式会社 V 技术 | Polishing head, polishing apparatus, and polishing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114649245A (en) * | 2022-05-19 | 2022-06-21 | 西安奕斯伟材料科技有限公司 | Device for bearing and cleaning silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202302277A (en) | 2023-01-16 |
| TWI829299B (en) | 2024-01-11 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710100 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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