CN114257230A - Ternary driving circuit of GaN HEMT device - Google Patents

Ternary driving circuit of GaN HEMT device Download PDF

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Publication number
CN114257230A
CN114257230A CN202111582688.5A CN202111582688A CN114257230A CN 114257230 A CN114257230 A CN 114257230A CN 202111582688 A CN202111582688 A CN 202111582688A CN 114257230 A CN114257230 A CN 114257230A
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China
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gan hemt
hemt device
drive
driven
state
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CN202111582688.5A
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Chinese (zh)
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曹国恩
王一波
黄欣科
王环
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Institute of Electrical Engineering of CAS
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Institute of Electrical Engineering of CAS
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Priority to CN202111582688.5A priority Critical patent/CN114257230A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K7/00—Modulating pulses with a continuously-variable modulating signal
    • H03K7/08—Duration or width modulation ; Duty cycle modulation

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Abstract

The invention belongs to the field of power semiconductor device driving, and particularly relates to a GaN HEMT device three-state driving circuit, aiming at solving the problem that the loss in the follow current process in dead time is large due to high reverse conduction voltage drop of the GaN HEMT device. The invention comprises the following steps: the GaN HEMT three-state drive circuit adopts the SR latch to realize the identification of dead time after the GaN HEMT is switched off, and reduces the reverse conduction voltage drop of a GaN HEMT device by controlling the grid drive voltage of the GaN HEMT device in the follow current stage after the GaN HEMT device is switched off, thereby reducing the follow current loss, improving the efficiency, keeping the dead time before the GaN HEMT is switched on in a conventional switching-off state, and improving the reliability and the flexibility of the drive. The invention fundamentally solves the problem of large follow current loss caused by higher reverse conduction voltage drop, has simple structure and is not limited by circuit topology.

Description

Ternary driving circuit of GaN HEMT device
Technical Field
The invention belongs to the field of power semiconductor device driving, and particularly relates to a GaN HEMT device three-state driving circuit.
Background
The GaN HEMT device has excellent performances such as high breakdown field strength and low on-resistance, and has wide application prospect in the field of high-efficiency and high-frequency power conversion. The device characteristics of GaN HEMT devices are greatly different from those of silicon-based MOSFETs, and the gate driving technology thereof has been a research hotspot in recent years in academia and industry.
GaN HEMT devices do not have anti-parallel body diodes unlike silicon-based MOSFETs, however, GaN HEMT devices exhibit higher turn-on voltage drops during dead time with additional efficiency loss, despite the absence of the body diode reverse recovery process. FIG. 1 is a schematic diagram of a prior art Dual Active Bridge (DAB) topology, taking the topology of FIG. 1 as an example, employing conventional single phase shift control, with a typical switching waveform as shown in FIG. 2, during the dead time of the driving signal (shaded portion, t, in FIG. 2)0-t1、t3-t4、t6-t7Time of day), primary side current iLsHas higher current peak value, after the four switching tubes on the primary side are turned off, the current needs to reversely flow through the parasitic diode of the switching tube for follow current, and the reverse conduction voltage drop (V) of the GaN HEMT deviceSD) Higher, leading to larger conduction loss and severe device heating in dead time.
Through the self-adaptive dead time control strategy, although the follow current time can be reduced by adjusting the dead time and the follow current loss can be reduced to a certain extent, the problem of large follow current loss of the GaN HEMT device cannot be fundamentally solved, and the adjustment of the dead time can also influence the working processes of soft switching and the like of the converter and influence the high-efficiency operation of the converter.
Therefore, how to reduce the dead time freewheel loss of the GaN HEMT device becomes one of the key issues for high-efficiency application of the GaN HEMT device.
Disclosure of Invention
In order to solve the above problems in the prior art, namely, the problem that loss in the follow current process is large due to high reverse conduction voltage drop of a GaN HEMT device in dead time, the invention provides a GaN HEMT device three-state drive circuit, which comprises an input end of a PWM1 drive signal, an input end of a PWM2 drive signal, an SR latch, a follow current drive switch tube, a follow current drive power supply, a conduction drive half-bridge, a conduction drive power supply and a follow current drive anti-reverse diode;
the set end of the SR latch is connected with the input end of the PWM1 driving signal, the reset end of the SR latch is connected with the input end of the PWM2 driving signal, and the output end of the SR latch is connected with the gate pole of the follow current driving switch tube;
the drain electrode of the follow current drive switching tube is connected with the anode of the follow current drive power supply, and the source electrode of the follow current drive switching tube is connected to the grid electrode of the GaN HEMT device to be driven through the follow current drive anti-reverse diode;
the conducting driving half bridge comprises a top tube and a bottom tube, wherein the gate electrode of the top tube is connected to the input end of the PWM1 driving signal, the drain electrode of the top tube is connected to the positive electrode of the conducting driving power supply, the gate electrode of the bottom tube is connected to the input end of the PWM2 driving signal, and the source electrode of the top tube and the drain electrode of the bottom tube are connected to the grid electrode of the GaN HEMT device to be driven together;
and the negative electrode of the follow current driving power supply, the negative electrode of the conducting driving power supply and the source electrode of the lower tube are all grounded.
In some preferred embodiments, the PWM1 drive signal and the PWM2 drive signal each have a dead time, and the signals outside the dead time are complementary.
In some preferred embodiments, the SR latch drives the follow current driving switching tube to be turned on in a dead time after the to-be-driven GaN HEMT device is turned off, and keeps the follow current driving switching tube turned off in a dead time before the to-be-driven GaN HEMT device is turned on.
In some preferred embodiments, the PWM1 drive signal, the PWM2 drive signal, and timing signals between the SR latches are used to control the GaN HEMT device to be driven in an off state, an on state, or a freewheeling state.
In some preferred embodiments, the on-drive half-bridge is configured to drive the GaN HEMT device to be driven to be in an on-state or an off-state under the PWM1 drive signal, the PWM2 drive signal and the timing signal between the SR latches; and the follow current driving switch tube is used for driving the to-be-driven GaN HEMT device under the PWM1 driving signal, the PWM2 driving signal and the time sequence signal among the SR latches, so that the to-be-driven GaN HEMT device is in a follow current state.
In some preferred embodiments, the follow current driving switch tube is turned on in a follow current stage after the to-be-driven GaN HEMT device is turned off, and is configured to apply a voltage of the follow current driving power supply to a gate of the to-be-driven GaN HEMT device, so that the to-be-driven GaN HEMT device is kept turned off in a follow current state, and a reverse conduction voltage drop of the to-be-driven GaN HEMT device is reduced.
In some preferred embodiments, the voltage of the freewheel drive supply is less than the gate-on voltage of the GaN HEMT device to be driven.
In some preferred embodiments, the on-drive half-bridge is configured to apply a voltage of the on-drive power supply to a gate of the to-be-driven GaN HEMT device so as to place the to-be-driven GaN HEMT device in an on-state.
In some preferred embodiments, the free-wheeling drive anti-reverse diode has an anode connected to the source of the free-wheeling drive switching tube and a cathode connected to the gate of the to-be-driven GaN HEMT device.
In some preferred embodiments, the freewheel drive anti-reverse diode is used for preventing short circuit caused by the voltage of the on-state drive power supply being applied to the freewheel drive power supply when the to-be-driven GaN HEMT device is in an on-state.
The invention has the beneficial effects that:
(1) according to the tri-state driving circuit of the GaN HEMT device, the driving voltage lower than the turn-on threshold value is applied to the grid electrode of the GaN HEMT device to be driven in the dead time, so that the GaN HEMT device is kept in the turn-off state, meanwhile, the reverse tube voltage drop is reduced, and the problem of large follow current loss caused by high reverse conduction voltage drop is fundamentally solved.
(2) According to the tri-state driving circuit of the GaN HEMT device, the identification of the dead time after the to-be-driven GaN HEMT device is switched off is realized by adopting the SR latch, so that the dead time before the to-be-driven GaN HEMT device is switched on can be kept in a conventional switching-off state, and the reliability and flexibility of driving are improved.
(3) The GaN HEMT device three-state drive circuit does not influence the adjustment of the dead time of the circuit, has no requirement on the modulation strategy of the circuit, is not limited by the circuit topology, is suitable for the circuit topologies of single tubes, half bridges, multilevel and the like, and has rich application scenes.
(4) The tri-state driving circuit of the GaN HEMT device only adds the SR latch and the driving switch tube in the follow current stage on the basis of the driving circuit of the conventional GaN HEMT device, and has the advantages of simple structure, low cost, high reliability and easy realization.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 is a schematic diagram of a prior art Dual Active Bridge (DAB) topology;
FIG. 2 is a typical switching waveform diagram for a prior art Dual Active Bridge (DAB) topology with single phase shift control;
FIG. 3 is a schematic diagram of a driving circuit structure of an embodiment of a tri-state driving circuit of a GaN HEMT device of the present invention;
FIG. 4 is a schematic diagram of a switching waveform of an embodiment of a tri-state drive circuit of a GaN HEMT device of the present invention;
FIG. 5 is a switching waveform diagram of a single phase shift control DAB circuit according to an embodiment of the tri-state driving circuit of the GaN HEMT device of the present invention.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the related invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
The invention provides a GaN HEMT device three-state drive circuit, which reduces the reverse conduction voltage drop of the GaN HEMT device by controlling the grid drive voltage of the GaN HEMT device in the follow current stage after the GaN HEMT device is turned off, thereby reducing the follow current loss of the GaN HEMT device and improving the efficiency.
The invention discloses a GaN HEMT device three-state drive circuit, which comprises an input end of a PWM1 drive signal, an input end of a PWM2 drive signal, an SR latch, a follow current drive switch tube, a follow current drive power supply, a conduction drive half bridge, a conduction drive power supply and a follow current drive anti-reverse diode;
the set end of the SR latch is connected with the input end of the PWM1 driving signal, the reset end of the SR latch is connected with the input end of the PWM2 driving signal, and the output end of the SR latch is connected with the gate pole of the follow current driving switch tube;
the drain electrode of the follow current drive switching tube is connected with the anode of the follow current drive power supply, and the source electrode of the follow current drive switching tube is connected to the grid electrode of the GaN HEMT device to be driven through the follow current drive anti-reverse diode;
the conducting driving half bridge comprises a top tube and a bottom tube, wherein the gate electrode of the top tube is connected to the input end of the PWM1 driving signal, the drain electrode of the top tube is connected to the positive electrode of the conducting driving power supply, the gate electrode of the bottom tube is connected to the input end of the PWM2 driving signal, and the source electrode of the top tube and the drain electrode of the bottom tube are connected to the grid electrode of the GaN HEMT device to be driven together;
and the negative electrode of the follow current driving power supply, the negative electrode of the conducting driving power supply and the source electrode of the lower tube are all grounded.
In order to more clearly explain the tri-state driving circuit of the GaN HEMT device of the present invention, the modules in the embodiment of the present invention are described in detail below with reference to fig. 3.
The GaN HEMT device three-state driving circuit of the first embodiment of the present invention includes an input terminal 1 of a PWM1 driving signal, an input terminal 2 of a PWM2 driving signal, an SR latch 3, a freewheel driving switch tube 5, a freewheel driving power supply 4, a turn-on driving half bridge 7, a turn-on driving power supply 6, and a freewheel driving anti-reverse diode 8, and each module is described in detail as follows:
the set end of the SR latch 3 is connected with the input end 1 of a PWM1 driving signal, the reset end is connected with the input end 2 of a PWM2 driving signal, and the output end is connected with the gate pole of the follow current driving switch tube 5;
the drain electrode of the follow current drive switching tube 5 is connected with the anode of the follow current drive power supply 4, and the source electrode is connected to the grid electrode of the GaN HEMT device 9 to be driven through a follow current drive anti-reverse diode 8;
the conduction driving half-bridge 7 comprises an upper tube and a lower tube, wherein the gate electrode of the upper tube is connected to the input end 1 of the PWM1 driving signal, the drain electrode of the upper tube is connected to the anode of the conduction driving power supply 6, the gate electrode of the lower tube is connected to the input end 2 of the PWM2 driving signal, and the source electrode of the upper tube and the drain electrode of the lower tube are connected to the grid electrode of the to-be-driven GaN HEMT device 9 together;
the negative pole of the freewheeling drive power supply 4, the negative pole of the on drive power supply 6 and the source of the lower tube are all grounded.
Referring to fig. 4, which is a schematic diagram of a switching waveform of an embodiment of the tri-state driving circuit of the GaN HEMT device of the present invention, the two driving signals PWM1 and PWM2 are two driving signals with dead time and complementary signals except for the dead time, and in fig. 4, the dead time is t0-t1、t2-t3For the GaN HEMT device 9 to be driven, t2-t3Time is a follow current phase t0-t1The time is the conventional turn-off phase, therefore, to ensure the reliability and applicability of the drive (such as half-bridge topology), only t is needed2-t3Controlling the grid voltage V of the GaN HEMT device 9 to be driven in timeGSAnd its free-wheeling losses are reduced.
And the SR latch 3 drives the follow current driving switch tube 5 to be switched on in the dead time after the to-be-driven GaN HEMT device 9 is switched off, and keeps the follow current driving switch tube 5 switched off in the dead time before the to-be-driven GaN HEMT device 9 is switched on. Namely, the SR latch 3 drives the GaN HEMT device 9 to be driven for dead time t after the off according to two driving signals PWM1 and PWM22-t3In the method, the follow current drives the switch tube 5 to be turned on, and the dead time t is set before the GaN HEMT device 9 to be driven is turned on0-t1And keeping the follow current driving switch tube 5 off.
The PWM1 drive signal, the PWM2 drive signal, and the timing signals between the SR latches are used to control the GaN HEMT device 9 to be driven in an off state, on state, or freewheeling state.
As shown in fig. 3, the on-state and off-state of the GaN HEMT device 9 to be driven are driven by the on-drive half-bridge 7, and the freewheel state of the GaN HEMT device 9 to be driven is driven by the freewheel drive switching tube 4.
The turn-on driving half bridge 7 is used for driving the to-be-driven GaN HEMT device 9 under the time sequence signals among the PWM1 driving signal, the PWM2 driving signal and the SR latch 3, so that the to-be-driven GaN HEMT device 9 is in a turn-on state or a turn-off state; and the follow current driving switch tube 5 is used for driving the GaN HEMT device 9 to be driven under the PWM1 driving signal, the PWM2 driving signal and the timing signal among the SR latch 3, so that the GaN HEMT device 9 to be driven is in a follow current state.
The follow current drive switching tube 5 is turned on at the follow current stage after the to-be-driven GaN HEMT device 9 is turned off, for applying the voltage of the follow current drive power supply 4 to the gate of the to-be-driven GaN HEMT device 9 (i.e., the gate voltage V applied to the to-be-driven GaN HEMT device 9)GS) The GaN HEMT device 9 to be driven is kept off in the freewheeling state, and the reverse conduction voltage drop of the GaN HEMT device 9 to be driven is reduced.
The gate threshold voltage of a conventional GaN HEMT device (e.g., a GS66516T device from GaN Systems) is low, typically about 1.3V, and in the present invention, the voltage of the freewheel drive power supply 4 needs to be made smaller than the gate-on voltage of the GaN HEMT device 9 to be driven, and in the present embodiment, the freewheel drive power supply 4 is set to 0.9V, so that when the freewheel drive power supply 4 is applied to the gate voltage V of the GaN HEMT device 9 to be driven in a freewheel stateGSIn this case, the GaN HEMT device 9 to be driven is kept off, and its reverse voltage drop is small.
In the embodiment of the invention, in order to make the GaN HEMT device GS66516T completely turned on, the voltage of the turn-on driving power supply 6 is set to be 6V, and the turn-on driving half bridge 7 is used for applying the voltage (6V) of the turn-on driving power supply 6 to the grid electrode of the to-be-driven GaN HEMT device 9Voltage VGSSo that the GaN HEMT device 9 to be driven is in a conducting state; as shown in FIG. 5, a switching waveform diagram of a single phase shift control DAB circuit according to an embodiment of the three-state driving circuit of the GaN HEMT device of the present invention is shown in FIG. 1, and by using the three-state driving circuit of the GaN HEMT device of the present invention, a switching tube Q in the DAB circuit can be realizedH1、QH4Dead time t after shutdown3-t4The follow current driving state is kept in to keep low reverse voltage drop and reduce loss, and other dead time t0-t1、t6-t7Keeping a normal turn-off state; so that the switch tube QH2、QH3Dead time t after shutdown0-t1、t6-t7In a freewheeling driving state, at other dead time t3-t4The normal off state is maintained. Therefore, the reverse pipe voltage drop V of the switch pipe in the free-wheeling driving state can be reducedSDTo reduce the follow current loss and improve the device efficiency. Fig. 2 is a waveform diagram of a typical switch using single phase shift control in a Dual Active Bridge (DAB) topology in the prior art, and it can be seen from comparison between fig. 5 and fig. 2 that the GaN HEMT tri-state driving circuit of the present invention has no influence on the operation mode of the circuit.
In addition, a freewheeling drive anti-reverse diode 8, the anode of which is connected to the source of the freewheeling drive switch 5 and the cathode of which is connected to the gate of the to-be-driven GaN HEMT device 9 (the point is also connected to the midpoint of the conducting drive half-bridge 7), i.e. in series between the freewheeling drive switch 5 and the midpoint of the conducting drive half-bridge 7, prevents the voltage of the conducting drive power supply 6 from being applied to the freewheeling drive power supply 4 when the to-be-driven GaN HEMT device 9 is in the conducting state, thereby causing a short circuit phenomenon.
It should be noted that the GaN HEMT tri-state driving circuit provided by the present invention is not limited to being built by discrete devices, and the tri-state driving method provided by the present invention can also be implemented by an integrated driving chip, which is not described in detail herein.
It should be noted that, the GaN HEMT device tri-state driving circuit provided in the above embodiment is only illustrated by dividing the above functional blocks, and in practical applications, the above function distribution may be completed by different functional blocks according to needs, that is, the blocks in the embodiment of the present invention are further decomposed or combined, for example, the blocks in the above embodiment may be combined into one block, or may be further split into a plurality of sub-blocks, so as to complete all or part of the above described functions. The names of the modules involved in the embodiments of the present invention are only for distinguishing the modules, and are not to be construed as an improper limitation of the present invention.
The terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing or implying a particular order or sequence.
The terms "comprises," "comprising," or any other similar term are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of the present invention is obviously not limited to these specific embodiments. Equivalent changes or substitutions of related technical features can be made by those skilled in the art without departing from the principle of the invention, and the technical scheme after the changes or substitutions can fall into the protection scope of the invention.

Claims (10)

1. The tri-state drive circuit of the GaN HEMT device is characterized by comprising an input end of a PWM1 drive signal, an input end of a PWM2 drive signal, an SR latch, a follow current drive switch tube, a follow current drive power supply, a conduction drive half bridge, a conduction drive power supply and a follow current drive anti-reverse diode;
the set end of the SR latch is connected with the input end of the PWM1 driving signal, the reset end of the SR latch is connected with the input end of the PWM2 driving signal, and the output end of the SR latch is connected with the gate pole of the follow current driving switch tube;
the drain electrode of the follow current drive switching tube is connected with the anode of the follow current drive power supply, and the source electrode of the follow current drive switching tube is connected to the grid electrode of the GaN HEMT device to be driven through the follow current drive anti-reverse diode;
the conducting driving half bridge comprises a top tube and a bottom tube, wherein the gate electrode of the top tube is connected to the input end of the PWM1 driving signal, the drain electrode of the top tube is connected to the positive electrode of the conducting driving power supply, the gate electrode of the bottom tube is connected to the input end of the PWM2 driving signal, and the source electrode of the top tube and the drain electrode of the bottom tube are connected to the grid electrode of the GaN HEMT device to be driven together;
and the negative electrode of the follow current driving power supply, the negative electrode of the conducting driving power supply and the source electrode of the lower tube are all grounded.
2. The GaN HEMT device tri-state drive circuit of claim 1, wherein the PWM1 drive signal and the PWM2 drive signal each have a dead time, and signals outside the dead time are complementary.
3. The GaN HEMT device tri-state drive circuit of claim 2, wherein the SR latch drives the follow current drive switching tube to conduct during a dead time after the GaN HEMT device to be driven is turned off, and keeps the follow current drive switching tube off during the dead time before the GaN HEMT device to be driven is turned on.
4. The GaN HEMT device tri-state drive circuit of claim 1, wherein the PWM1 drive signal, the PWM2 drive signal, and the timing signal between the SR latches are used to control the GaN HEMT device to be driven in an off state, an on state, or a freewheeling state.
5. The GaN HEMT device tri-state drive circuit of claim 1, wherein the on-drive half-bridge is configured to drive the GaN HEMT device to be driven to be in an on-state or an off-state under the timing signals among the PWM1 drive signal, the PWM2 drive signal and the SR latch; and the follow current driving switch tube is used for driving the to-be-driven GaN HEMT device under the PWM1 driving signal, the PWM2 driving signal and the time sequence signal among the SR latches, so that the to-be-driven GaN HEMT device is in a follow current state.
6. The GaN HEMT device three-state drive circuit according to claim 5, wherein the follow current drive switch tube is turned on at a follow current stage after the GaN HEMT device to be driven is turned off, and is used for applying the voltage of the follow current drive power supply to the gate of the GaN HEMT device to be driven, so that the GaN HEMT device to be driven is kept turned off in a follow current state, and the reverse conduction voltage drop of the GaN HEMT device to be driven is reduced.
7. The GaN HEMT device tri-state drive circuit of claim 6, wherein the voltage of the freewheel drive power supply is less than the gate-on voltage of the GaN HEMT device to be driven.
8. The GaN HEMT device tri-state drive circuit of claim 1, wherein the turn-on drive half-bridge is configured to apply the voltage of the turn-on drive power supply to the gate of the to-be-driven GaN HEMT device to place the to-be-driven GaN HEMT device in a turned-on state.
9. The GaN HEMT device three-state drive circuit of claim 1, wherein the freewheeling-driven anti-reverse diode has an anode connected to the source of the freewheeling-driven switching tube and a cathode connected to the gate of the to-be-driven GaN HEMT device.
10. The GaN HEMT device tri-state drive circuit of claim 9, wherein said freewheel drive anti-reverse diode is configured to prevent a short circuit caused by a voltage of said on-state drive power supply being applied to said freewheel drive power supply when the GaN HEMT device to be driven is in an on-state.
CN202111582688.5A 2021-12-22 2021-12-22 Ternary driving circuit of GaN HEMT device Pending CN114257230A (en)

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CN202111582688.5A CN114257230A (en) 2021-12-22 2021-12-22 Ternary driving circuit of GaN HEMT device

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