CN114248197A - Processing device - Google Patents
Processing device Download PDFInfo
- Publication number
- CN114248197A CN114248197A CN202111073334.8A CN202111073334A CN114248197A CN 114248197 A CN114248197 A CN 114248197A CN 202111073334 A CN202111073334 A CN 202111073334A CN 114248197 A CN114248197 A CN 114248197A
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- Prior art keywords
- processing
- processing tool
- partition plate
- tool
- wafer
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- 238000005192 partition Methods 0.000 claims abstract description 85
- 238000005498 polishing Methods 0.000 claims abstract description 44
- 238000003754 machining Methods 0.000 claims abstract description 32
- 230000007246 mechanism Effects 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract 1
- 239000004575 stone Substances 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Milling, Broaching, Filing, Reaming, And Others (AREA)
Abstract
The invention provides a processing device, which can prevent the processing chips generated in one processing from causing adverse effect on the other processing. When a wafer (100) is processed by a grinding wheel (98), a 1 st partition plate (11) and a 2 nd partition plate (12) vertically partition a processing chamber (20) so as to surround the grinding wheel (98) by a 1 st semicircular recess (111) and a 2 nd semicircular recess (121). Therefore, the polishing pad (93) positioned above the processing chamber (20) can be protected from the processing chips generated by processing the wafer (100) by the front end of the grinding wheel (98) positioned below the processing chamber (20). This can prevent the adhesion of machining chips to the polishing pad (93). Therefore, the rear surface (102) of the wafer (100) polished by the polishing pad (93) can be prevented from being scratched by the processing debris.
Description
Technical Field
The present invention relates to a processing apparatus.
Background
In a TSV wafer having TSVs (Through Silicon vias) as Through electrodes, the back surface is planarized by grinding and CMP (chemical mechanical polishing), and the Through electrodes exposed on the front surface side are planarized by CMP. In recent years, since the wiring of the through electrode is replaced with a copper wiring from an aluminum wiring, the through electrode is planarized by spin cutting with a cutter and CMP. Therefore, the rotary cutting and CMP by the tool can be performed by the processing unit using one processing device as disclosed in patent document 1, thereby downsizing the device and improving productivity.
Patent document 1: japanese patent laid-open publication No. 2016-92281
In the apparatus described in patent document 1, the spin-cutting and the CMP are performed in the same processing chamber. Therefore, the chipping generated by the chipping process adheres to the lower surface of the polishing pad, and the surface to be polished of the wafer may be scratched during CMP.
In addition, when the processing unit can perform grinding and CMP, grinding chips generated by the grinding process adhere to the lower surface of the polishing pad, and the surface to be polished of the wafer may be scratched during CMP.
Disclosure of Invention
Therefore, an object of the present invention is to suppress the machining chips generated when one type of machining is performed from adversely affecting another type of machining performed later.
The processing apparatus (the present processing apparatus) of the present invention includes: a chuck table that holds a wafer by a holding surface; a processing unit having a processing tool for processing the wafer held by the chuck table; a processing and feeding unit which performs processing and feeding on the processing unit in a direction perpendicular to the holding surface; and a processing chamber for accommodating the chuck table and the processing tool, wherein the processing unit comprises: a 1 st mounting base, the upper surface of which is connected with the lower end of the main shaft extending along the vertical direction, and the 1 st processing tool is mounted on the lower surface of the 1 st mounting base; a 2 nd mounting seat having an inner diameter larger than an outer diameter of the 1 st mounting seat, being in an annular shape concentric with the 1 st mounting seat, and having a 2 nd machining tool mounted on a lower surface of the 2 nd mounting seat; and a selection unit which relatively moves the 1 st mounting seat and the 2 nd mounting seat in the vertical direction, thereby selectively bringing the 1 st processing tool or the 2 nd processing tool close to the holding surface, wherein the processing chamber has a partition mechanism which, when the 1 st processing tool is brought closer to the holding surface than the 2 nd processing tool by the selection unit and the wafer held by the holding surface is processed by the 1 st processing tool, partitions the processing chamber up and down around the 1 st processing tool, and protects the 2 nd processing tool from processing chips generated by the 1 st processing tool processing the wafer, the partition mechanism has: a 1 st partition plate extending in the horizontal direction and having a 1 st semicircular recess along the outer surface of the 1 st processing tool; a 2 nd partition plate extending in the horizontal direction and having a 2 nd semicircular recess along the outer surface of the 1 st processing tool and facing the 1 st semicircular recess, and a 1 st horizontal movement mechanism for moving the 1 st partition plate in the horizontal direction; and a 2 nd horizontal moving mechanism for moving the 2 nd partition plate in a horizontal direction, for moving the 1 st partition plate and the 2 nd partition plate away from each other in the horizontal direction from the spindle to allow the 2 nd processing tool to pass between the 1 st semicircular recess and the 2 nd semicircular recess when the 2 nd processing tool is used for processing the wafer held by the holding surface, for moving the 1 st partition plate and the 2 nd partition plate closer to each other in the horizontal direction to the spindle when the 1 st processing tool is used for processing the wafer held by the holding surface, and for surrounding the 1 st processing tool with a circle formed by connecting the 1 st semicircular recess and the 2 nd semicircular recess, thereby protecting the 2 nd processing tool from processing chips generated by the 1 st processing tool when processing the wafer.
In the present processing apparatus, the 1 st processing tool may be a rotary cutter or a grinding wheel, and the 2 nd processing tool may be a polishing pad.
In the present processing apparatus, the 1 st partition plate and the 2 nd partition plate may further have a water discharge port for discharging water toward the 1 st processing tool.
In the processing apparatus, when the wafer is processed by the 1 st processing tool, the 1 st partition plate and the 2 nd partition plate vertically partition the processing chamber so that the 1 st processing tool is surrounded by the 1 st semicircular recess and the 2 nd semicircular recess. Therefore, the 2 nd processing tool located above the processing chamber can be protected from the processing chips generated by processing the wafer by the front end of the 1 st processing tool located below the processing chamber. This can prevent the adhesion of machining chips to the 2 nd machining tool. Therefore, the wafer to be processed by the 2 nd processing tool can be prevented from being scratched by the processing debris.
Drawings
Fig. 1 is a sectional view showing the structure of a processing apparatus.
Fig. 2 is a sectional view showing the structure of the processing apparatus.
Fig. 3 is an explanatory view showing the 1 st partition plate and the 2 nd partition plate coupled to each other.
Fig. 4 is a sectional view showing the structure of the processing apparatus.
Fig. 5 is an explanatory view showing the 1 st partition plate and the 2 nd partition plate which are distant from each other.
Fig. 6 is an explanatory view showing the 1 st partition plate and the 2 nd partition plate having water ejection outlets.
Description of the reference symbols
1: a processing device; 3: a column; 5: a control unit; 100: a wafer; 101: a front side; 102: a back side; 103: protecting the belt; 10: a separation mechanism; 11: 1 st partition plate; 12: a 2 nd partition plate; 111: 1 st semicircular concave part; 121: a 2 nd semicircular recess; 13: the 1 st horizontal moving mechanism; 14: a 2 nd horizontal movement mechanism; 16: a water spray outlet; 20: a processing chamber; 21: an upper plate; 22: a side plate; 23: a front plate; 24: a back plate; 211: machining an appliance lead-in hole; 30: a holding unit; 31: a chuck table; 32: a holding surface; 36: a frame body; 33: a support member; 34: a rotation unit; 35: a support column; 37: a cover plate; 39: an air supply source; 60: an air flow path; 40: a Y-axis direction moving unit; 50: a processing feeding unit; 70: a processing unit; 71: a spindle unit; 72: a main shaft; 73: a spindle motor; 74: a housing; 721: 1 st shaft part; 722: a thrust plate; 723: a 2 nd shaft portion; 724: a cylindrical large diameter portion; 725: a cylindrical small diameter portion; 80: an advancing and retreating mechanism; 81: a storage chamber; 82: a piston; 83: a piston rod; 84: a guide section; 85: a regulator; 86: an air source; 90: an annular plate; 91: an annular mounting seat; 92: pressing a plate; 93: a polishing pad; 95: a circular plate mounting base; 96: grinding the grinding wheel; 97: a grinding wheel base station; 98: and grinding the grinding tool.
Detailed Description
As shown in fig. 1, a processing apparatus 1 according to the present embodiment is an apparatus for grinding and polishing a wafer 100 as a workpiece, and includes a control unit 5 for controlling each component of the processing apparatus 1.
The wafer 100 is, for example, a circular semiconductor wafer. The front surface 101 of the wafer 100 holds a plurality of devices, and the front surface 101 is protected by pasting a protective tape 103. The back surface 102 of the wafer 100 is a surface to be processed to be ground or polished.
The machining device 1 includes a holding unit 30 for holding a workpiece. The holding unit 30 includes a chuck table 31, a support member 33 that supports the chuck table 31, and a rotating unit 34 that rotates the chuck table 31.
The chuck table 31 has a holding surface 32 for holding the wafer 100 and a frame 36 surrounding the holding surface 32. In the present embodiment, the upper surface of the frame 36 is formed substantially flush with the holding surface 32, and has the same height as the holding surface 32.
The holding surface 32 of the chuck table 31 is made of, for example, a porous material, and communicates with a suction source (not shown), thereby sucking and holding the wafer 100 through the protective tape 103. That is, the chuck table 31 holds the wafer 100 by the holding surface 32.
The chuck table 31 can be rotated by the rotating unit 34 provided below around a central axis extending in the Z-axis direction passing through the center of the holding surface 32 while the wafer 100 is held by the holding surface 32. Therefore, the wafer 100 is held by the holding surface 32 and rotated about the center of the holding surface 32.
A cover plate 37 is provided around the support member 33. Further, bellows covers (not shown) that extend and contract in the Y axis direction are connected to the + Y side and the-Y side of the cover plate 37. Further, a Y-axis direction moving unit 40 is disposed below the holding unit 30. The Y-axis direction moving unit 40 moves the holding unit 30 in the Y-axis direction.
The Y-axis direction moving unit 40 relatively moves the holding unit 30 and the processing unit 70 in the Y-axis direction parallel to the holding surface 32. In the present embodiment, the Y-axis direction moving unit 40 is configured to move the holding unit 30 in the Y-axis direction with respect to the processing unit 70.
Instead of the Y-axis direction moving unit 40, the machining device 1 may include a turntable as a horizontal moving unit, the turntable including a plurality of holding units 30.
The Y-axis direction moving unit 40 includes: a Y-axis guide rail 42 parallel to the Y-axis direction; a Y-axis moving table 45 sliding on the Y-axis guide rail 42; a Y-axis ball screw 43 parallel to the Y-axis guide rail 42; a Y-axis motor 44 connected to the Y-axis ball screw 43; and a holding table 41 for holding them.
The Y-axis moving table 45 is slidably provided on the Y-axis guide rail 42 via a slide member 451. A nut portion 401 is fixed to the lower surface of the Y-axis moving table 45. The nut portion 401 is screwed with the Y-axis ball screw 43. The Y-axis motor 44 is coupled to one end of the Y-axis ball screw 43.
In the Y-axis direction moving unit 40, the Y-axis motor 44 rotates the Y-axis ball screw 43, and the Y-axis moving table 45 moves in the Y-axis direction along the Y-axis guide rail 42. The support member 33 of the holding unit 30 is placed on the Y-axis moving table 45 via the support column 35. Therefore, the holding unit 30 including the chuck table 31 moves in the Y-axis direction along with the movement of the Y-axis moving table 45 in the Y-axis direction.
In the present embodiment, the holding unit 30 is moved in the Y-axis direction between the machining position at the rear (+ Y-direction side) and the carrying-in/out position at the front (-Y-direction side) by the Y-axis direction moving unit 40.
In addition, as shown in fig. 1, a column 3 is provided upright on the rear side (+ Y direction side) of the holding unit 30. A processing unit 70 that processes the wafer 100 and a processing feed unit 50 are provided on the front surface of the column 3.
The machining feed unit 50 is a vertical movement unit that relatively moves the holding unit 30 and the machining unit 70 in a Z-axis direction (machining feed direction) perpendicular to the holding surface 32. In the present embodiment, the machining-and-feeding unit 50 is configured to machine and feed the machining unit 70 to the holding unit 30 in the Z-axis direction perpendicular to the holding surface 32.
The processing and feeding unit 50 includes: a Z-axis guide 51 parallel to the Z-axis direction; a Z-axis moving table 53 that slides on the Z-axis guide rail 51; a Z-axis ball screw 52 parallel to the Z-axis guide 51; a Z-axis motor 54; a Z-axis encoder 55 for detecting a rotation angle of the Z-axis motor 54; a storage unit 57 for storing the detection result of the Z-axis encoder 55; and a bracket 56 mounted on the front surface (front surface) of the Z-axis moving table 53. The holder 56 holds the processing unit 70.
The Z-axis moving table 53 is slidably provided on the Z-axis guide 51 via a slide member 531. A nut portion 501 is fixed to the rear surface side (back surface side) of the Z-axis moving table 53. The nut portion 501 is screwed with the Z-axis ball screw 52. The Z-axis motor 54 is coupled to one end of the Z-axis ball screw 52.
In the machining-feed unit 50, the Z-axis motor 54 rotates the Z-axis ball screw 52, and the Z-axis moving table 53 moves in the Z-axis direction along the Z-axis guide 51. Thereby, the lug 56 attached to the Z-axis moving table 53 and the machining unit 70 held by the lug 56 also move in the Z-axis direction together with the Z-axis moving table 53.
The machining unit 70 has a spindle unit 71. The spindle unit 71 includes: a main shaft 72 extending in a direction perpendicular to the holding surface 32; a spindle motor 73 for rotating the spindle 72; and a housing 74 surrounding the spindle 72 and the spindle motor 73.
The main shaft 72 has a 1 st shaft portion 721 and a 2 nd shaft portion 723 formed to have a larger diameter than the 1 st shaft portion 721. A thrust plate 722 is disposed between the 1 st shaft part 721 and the 2 nd shaft part 723. The main shaft 72 also has a cylindrical large diameter portion 724 formed below the 2 nd shaft portion 723 and a cylindrical small diameter portion 725 formed below the cylindrical large diameter portion 724.
An air flow path 60 is formed inside the casing 74. The air flow path 60 is connected to the air supply source 39. The air flow path 60 is branched into a plurality of branch paths inside the casing 74. The air flow path 60 communicates with openings in the upper surface 61, the side surface 62, and the lower surface 63 of the casing 74.
The air supplied from the air supply source 39 is ejected from the openings of the upper surface 61, the side surface 62, and the lower surface 63 of the casing 74 to the outside of the casing 74 through the air flow path 60 of the casing 74.
Air is ejected from upper surface 61, side surface 62, and lower surface 63 of housing 74, thereby forming gaps between thrust plate 722 of main shaft 72 and housing 74, between 2 nd shaft portion 723 of main shaft 72 and housing 74, and between cylindrical large diameter portion 724 of main shaft 72. Thus, bearings for supporting the main shaft 72 in a non-contact manner by air so as to be rotatable are formed in these gaps.
The upper surface of a disk mounting base 95 as the 1 st mounting base is connected to the lower end of a cylindrical small diameter portion 725 at the lower end of the main shaft 72. Further, a guide portion 84 for coupling the lower surface of the cylindrical large diameter portion 724 of the main shaft 72 and the disk mounting base 95 is disposed therebetween.
A grinding wheel 96 is attached to the lower surface of the disk mounting base 95. The grinding wheel 96 includes a wheel base 97 and a plurality of grinding stones 98 arranged in a substantially rectangular parallelepiped shape at a lower end of the wheel base 97 in a ring shape.
The grinding wheel 98 is rotatable by the spindle motor 73 via the spindle 72, the disk mounting base 95, and the grinding wheel base 97.
Further, the advancing-retreating mechanism 80 is disposed in the cylindrical large diameter portion 724 and the cylindrical small diameter portion 725 of the main shaft 72. The advancing-retreating mechanism 80 has a housing chamber 81 disposed in the cylindrical large-diameter portion 724 of the main shaft 72. The housing chamber 81 houses a piston 82.
A plurality of piston rods 83 are connected to the lower portion of the piston 82. The plurality of piston rods 83 are provided at equal intervals in the circumferential direction of the piston 82. In fig. 1, only one piston rod 83 is shown.
An annular plate 90 is connected to the lower end of the piston rod 83. Further, the annular plate 90 is formed with a through hole 901 through which the guide portion 84 described above passes.
An annular mounting seat 91 as a 2 nd mounting seat is coupled to a lower surface of the annular plate 90. An annular polishing pad 93 as a 2 nd processing tool for polishing a workpiece is attached to the lower surface of the annular attachment base 91 via a platen 92.
The annular mounting seat 91, the pressure plate 92, and the polishing pad 93 have an inner diameter larger than the outer diameters of the disk mounting seat 95 and the grinding wheel 96, and are formed in an annular shape concentric with the disk mounting seat 95.
The polishing pad 93 is rotatable about the center by a spindle motor 73 via a spindle 72, an annular plate 90, an annular mount 91, and a pressure plate 92.
The polishing pad 93 and the grinding whetstone 98 are examples of processing tools for processing the wafer 100 held by the chuck table 31. The grinding wheel 98 is an example of a 1 st processing tool provided on the inner side, and the polishing pad 93 is an example of a 2 nd processing tool provided on the outer side.
An air source 86 is connected to the housing chamber 81 of the advancing-retreating mechanism 80 via a regulator 85. In the advancing-retreating mechanism 80, by supplying air from the air source 86 to the housing chamber 81 from above via the regulator 85, a pressing force in the-Z direction is applied to the piston 82, and the piston 82 can be lowered in the Z-axis direction.
Further, by supplying air to the housing chamber 81 from below, a pressing force in the + Z direction is applied to the piston 82, and the piston 82 can be raised in the Z-axis direction.
When the piston 82 moves up and down in the Z-axis direction, the annular plate 90 connected to the piston 82 via the piston rod 83 moves up and down while being guided by the guide portion 84. Along with this, the polishing pad 93 attached to the annular plate 90 moves up and down. Thus, the polishing pad 93 and the grinding stone 98 relatively advance and retreat in the Z-axis direction.
In this way, the advancing/retreating mechanism 80 functions as a selection means for selectively bringing the grindstone 98 or the polishing pad 93 close to the holding surface 32 by relatively moving the disk mounting base 95 and the annular mounting base 91 in the Z-axis direction, which is a direction perpendicular to the holding surface 32.
As described above, the annular mounting seat 91, the pressure plate 92, and the polishing pad 93 have inner diameters larger than the outer diameters of the disk mounting seat 95 and the grinding wheel 96. Therefore, the disk mounting base 95 and the grinding wheel 96 are accommodated inside the annular mounting base 91, the pressure plate 92, and the grinding pad 93 so as not to contact each other, and the grinding pad 93 is movable relative to the grinding wheel 98 in the vertical direction.
As shown in fig. 1 and 2 (a cross-sectional view of the processing apparatus 1 along the Y-axis direction), the processing apparatus 1 has a processing chamber 20 having a substantially housing shape below the processing unit 70. The processing chamber 20 is configured to accommodate the chuck table 31 of the holding unit 30 for holding the wafer 100, and the grinding wheel 98 and the polishing pad 93 as processing tools of the processing unit 70 when processing the wafer 100.
As shown in fig. 1 and 2, the processing chamber 20 has an upper plate 21, and the upper plate 21 has a processing tool introduction hole 211. The tool introduction hole 211 is provided to allow the grinding stone 98 and the polishing pad 93, which are tools of the processing unit 70, to be introduced into the processing chamber 20. The processing chamber 20 is configured to include the upper plate 21, the side plate 22, the front plate 23 on the-Y side, the rear plate 24 on the + Y side, and a cover plate 37 of the holding unit 30 as a bottom plate. The front plate 23 is provided to hang down from the upper plate 21 by a length that the holding unit 30 can move in the Y-axis direction into the processing chamber 20.
Further, the machining tool has a bellows cover which can connect the upper plate 21 of the machining chamber 20 and the lower surface of the bracket 56 and which is extended and contracted in the vertical direction in a tubular shape which seals the machining tool introduction hole 211, thereby preventing the machining tool from being ejected from the machining tool introduction hole 211.
As shown in fig. 1 and 2, the processing chamber 20 has a partition mechanism 10. The partition mechanism 10 partitions the processing chamber 20 vertically around the grinding whetstone 98 when the grinding whetstone 98 is moved closer to the holding surface 32 than the grinding pad 93 by the advancing and retreating mechanism 80 and the wafer 100 held by the holding surface 32 is processed by the grinding whetstone 98, and protects the grinding pad 93 from the processing dust generated by the processing of the wafer 100 by the grinding whetstone 98.
As shown in fig. 2, the partition mechanism 10 has a 1 st partition plate 11 and a 2 nd partition plate 12 each extending in the horizontal direction.
The process chamber 20 and the partition mechanism 10 are shown from above in fig. 3. As shown in fig. 3, the 1 st partition plate 11 has a 1 st semicircular recess 111 along the outer side surface of the grinding stone 98. The 2 nd partition plate has a 2 nd semicircular recess 121 along the outer surface of the grinding wheel 98 and facing the 1 st semicircular recess 111.
As shown in fig. 2, the partition mechanism 10 includes a 1 st horizontal movement mechanism 13 for moving the 1 st partition plate 11 in the horizontal direction along the X-axis direction, and a 2 nd horizontal movement mechanism 14 for moving the 2 nd partition plate 12 in the horizontal direction along the X-axis direction.
These 1 st and 2 nd horizontal moving mechanisms 13 and 14 are installed on the lower surface of the upper plate 21 in the processing chamber 20.
As shown in fig. 3, the 1 st horizontal movement mechanism 13 and the 2 nd horizontal movement mechanism 14 respectively have an arm 201 coupled to the 1 st partition plate 11 and the 2 nd partition plate 12, and a driving device 200 for moving the arm 201 in the X-axis direction. In the 1 st horizontal movement mechanism 13 and the 2 nd horizontal movement mechanism 14, the arm 201 is moved in the X axis direction by the driving device 200, whereby the 1 st partition plate 11 and the 2 nd horizontal movement mechanism 14 are moved in the horizontal direction in the X axis direction, and can be brought close to and coupled to each other.
That is, in the partition mechanism 10, the 1 st partition plate 11 and the 2 nd partition plate 12 are brought close to and coupled to each other by the 1 st horizontal movement mechanism 13 and the 2 nd horizontal movement mechanism 14, whereby the 1 st partition plate 11 and the 2 nd partition plate 12 partition the processing chamber 20 vertically so as to surround the grinding whetstone 98 by the 1 st semicircular recess 111 and the 2 nd semicircular recess 121. At this time, the 1 st semicircular recess 111 and the 2 nd semicircular recess 121 are coupled to each other to form a circle smaller than the outer diameter of the polishing pad 93 shown by a dotted line in fig. 3, the circle surrounding the grinding stone 98. Therefore, the partition mechanism 10 can protect the polishing pad 93 from the processing dust generated by processing the wafer 100 with the grinding stone 98.
In addition, in order to facilitate the movement of the 1 st partition plate 11 and the 2 nd partition plate 12, a guide rail extending in the X-axis direction may be provided.
In the processing apparatus 1 having such a configuration, when the wafer 100 held by the holding surface 32 is polished by the polishing pad 93, the controller 5 horizontally separates the 1 st partition plate 11 and the 2 nd partition plate 12 from each other with respect to the spindle 72 as shown in fig. 4 and 5. Thus, the polishing pad 93 can pass between the 1 st semicircular recess 111 of the 1 st partition plate 11 and the 2 nd semicircular recess 121 of the 2 nd partition plate 12. The controller 5 controls the advancing and retreating mechanism 80 so that the polishing pad 93 is closer to the holding surface 32 than the grindstone 98. In this state, the control unit 5 performs polishing processing of the wafer 100 held by the holding surface 32 by the polishing pad 93.
On the other hand, when the wafer 100 held by the holding surface 32 is ground by the grinding wheel 98, the control unit 5 controls the advancing/retreating mechanism 80 to bring the grinding wheel 98 closer to the holding surface 32 than the polishing pad 93 as shown in fig. 2 and 3. Then, the controller 5 horizontally moves the 1 st partition plate 11 and the 2 nd partition plate 12 closer to each other on the main shaft, and surrounds the grinding wheel 98 by a circle formed by connecting the 1 st semicircular recess 111 and the 2 nd semicircular recess 121. In this state, the control unit 5 performs grinding processing of the wafer 100 held by the holding surface 32 by the grinding whetstone 98.
As described above, in the present embodiment, when the wafer 100 is processed by grinding the grindstone 98, the 1 st partition plate 11 and the 2 nd partition plate 12 vertically partition the processing chamber 20 so as to surround the grinding grindstone 98 by the 1 st semicircular recess 111 and the 2 nd semicircular recess 121. Therefore, the polishing pad 93 located above the processing chamber 20 can be protected from the machining chips generated by machining the wafer 100 with the front end (lower surface) of the grinding stone 98 located below the processing chamber 20. This can suppress adhesion of the machining chips to the polishing pad 93. Therefore, the rear surface 102 of the wafer 100 polished by the polishing pad 93 can be prevented from being scratched by the processing debris.
In the present embodiment, as shown in fig. 6, a plurality of water discharge ports 16 for discharging water toward the grinding stone 98 may be provided on the upper surfaces of the 1 st partition plate 11 and the 2 nd partition plate 12. The water jetting port 16 jets the machining water from a water source, not shown, from a side surface toward the grinding wheel 98 as indicated by an arrow in fig. 6 in the machining of the grinding wheel 98 that couples the 1 st partition plate 11 and the 2 nd partition plate 12.
In this configuration, by spraying the processing water from the side surface to the grinding whetstone 98 during the processing of the grinding whetstone 98, it is possible to prevent the processing chips generated by the processing of the wafer 100 by the grinding whetstone 98 from reaching the polishing pad 93 from the gaps between the 1 st partition plate 11 and the 2 nd partition plate 12 and the grinding whetstone 98. Therefore, the polishing pad 93 can be more favorably protected from the machining chips.
In addition, water ejection ports 16 may be provided on the lower surfaces or inside of the 1 st partition plate 11 and the 2 nd partition plate 12 instead of the upper surfaces of the 1 st partition plate 11 and the 2 nd partition plate 12 so as to be able to eject water toward the grindstone 98.
Further, the water ejection port 16 may be provided on the inner surface of the 1 st semicircular recess 111 of the 1 st partition plate 11 and the inner surface of the 2 nd semicircular recess 121 of the 2 nd partition plate 12.
In the present embodiment, the processing apparatus 1 includes a grinding wheel 98 as an inner 1 st processing tool and a polishing pad 93 as an outer 2 nd processing tool. The polishing pad 93 may be any polishing pad for CMP polishing or dry polishing.
The combination of the 1 st and 2 nd tools that can be realized in the processing apparatus 1 is not limited to the combination of the grindstone 98 and the polishing pad 93. For example, the processing device 1 may have a rotary cutter as the 1 st processing tool on the inner side and a polishing pad 93 as the 2 nd processing tool on the outer side. Alternatively, the processing apparatus 1 may have the grindstone 98 as the inner 1 st processing tool and the rotary cutter or grindstone 98 as the outer 2 nd processing tool. Alternatively, the machining device 1 may have a rotary cutter as the inner 1 st machining tool and a grindstone 98 as the outer 2 nd machining tool. Alternatively, the processing apparatus 1 may have the polishing pad 93 as the inner 1 st processing tool and the rotary cutter, the grinding stone 98, or the polishing pad 93 as the outer 2 nd processing tool.
Claims (3)
1. A processing apparatus, comprising:
a chuck table that holds a wafer by a holding surface;
a processing unit having a processing tool for processing the wafer held by the chuck table;
a processing and feeding unit which performs processing and feeding on the processing unit in a direction perpendicular to the holding surface; and
a processing chamber for accommodating the chuck worktable and the processing tool,
wherein,
the processing unit has:
a 1 st mounting base, the upper surface of which is connected with the lower end of the main shaft extending along the vertical direction, and the 1 st processing tool is mounted on the lower surface of the 1 st mounting base;
a 2 nd mounting seat having an inner diameter larger than an outer diameter of the 1 st mounting seat, being in an annular shape concentric with the 1 st mounting seat, and having a 2 nd machining tool mounted on a lower surface of the 2 nd mounting seat; and
a selection unit which relatively moves the 1 st mounting seat and the 2 nd mounting seat in the vertical direction, thereby selectively making the 1 st processing tool or the 2 nd processing tool approach the holding surface,
the processing chamber is provided with a partition mechanism which surrounds the 1 st processing tool and partitions the processing chamber up and down to protect the 2 nd processing tool from processing chips generated by the 1 st processing tool processing the wafer when the 1 st processing tool is closer to the holding surface than the 2 nd processing tool is through the selection unit and the wafer held by the holding surface is processed through the 1 st processing tool,
the partition mechanism has:
a 1 st partition plate extending in the horizontal direction and having a 1 st semicircular recess along the outer surface of the 1 st processing tool;
a 2 nd partition plate extending in the horizontal direction and having a 2 nd semicircular recess along the outer surface of the 1 st processing tool and opposed to the 1 st semicircular recess,
a 1 st horizontal movement mechanism for moving the 1 st partition plate in a horizontal direction; and
a 2 nd horizontal moving mechanism for moving the 2 nd partition plate in a horizontal direction,
when the 2 nd processing tool processes the wafer held by the holding surface, the 1 st partition plate and the 2 nd partition plate are horizontally separated from each other from the spindle, so that the 2 nd processing tool can pass between the 1 st semicircular recess and the 2 nd semicircular recess,
when the wafer held by the holding surface is processed by the 1 st processing tool, the 1 st partition plate and the 2 nd partition plate are horizontally close to the spindle, and the 1 st processing tool is surrounded by a circle formed by connecting the 1 st semicircular recess and the 2 nd semicircular recess, thereby protecting the 2 nd processing tool from processing chips generated by processing the wafer by the 1 st processing tool.
2. The processing device according to claim 1,
the 1 st processing tool is a rotary cutter or a grinding wheel, and the 2 nd processing tool is a polishing pad.
3. The processing device according to claim 1,
the 1 st partition plate and the 2 nd partition plate are further provided with water spray outlets for spraying water toward the 1 st processing tool.
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JP2020159551A JP7544547B2 (en) | 2020-09-24 | 2020-09-24 | Processing Equipment |
JP2020-159551 | 2020-09-24 |
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KR (1) | KR20220040984A (en) |
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JP2001322056A (en) | 2000-05-16 | 2001-11-20 | Nippei Toyama Corp | One-side grinding device and one-side grinding method |
US6905398B2 (en) | 2001-09-10 | 2005-06-14 | Oriol, Inc. | Chemical mechanical polishing tool, apparatus and method |
JP2004090128A (en) | 2002-08-30 | 2004-03-25 | Nippei Toyama Corp | Semiconductor wafer grinder |
JP5936963B2 (en) | 2012-09-05 | 2016-06-22 | 株式会社ディスコ | Processing equipment |
JP2016092281A (en) | 2014-11-07 | 2016-05-23 | 株式会社ディスコ | Surface machining device |
JP2018001290A (en) | 2016-06-28 | 2018-01-11 | 株式会社ディスコ | Machining device |
JP7068098B2 (en) | 2018-08-15 | 2022-05-16 | 株式会社ディスコ | Grinding device |
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JP2022052988A (en) | 2022-04-05 |
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