CN114245587B - Method for improving half-hole flash of system package module by wet film coating and application - Google Patents
Method for improving half-hole flash of system package module by wet film coating and application Download PDFInfo
- Publication number
- CN114245587B CN114245587B CN202111594403.XA CN202111594403A CN114245587B CN 114245587 B CN114245587 B CN 114245587B CN 202111594403 A CN202111594403 A CN 202111594403A CN 114245587 B CN114245587 B CN 114245587B
- Authority
- CN
- China
- Prior art keywords
- hole
- wet film
- film coating
- flash
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 68
- 239000007888 film coating Substances 0.000 title claims abstract description 41
- 238000009501 film coating Methods 0.000 title claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000007747 plating Methods 0.000 claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 claims abstract description 17
- 238000005553 drilling Methods 0.000 claims abstract description 12
- 239000002253 acid Substances 0.000 claims abstract description 10
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims abstract description 7
- 230000002265 prevention Effects 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 28
- 238000003756 stirring Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- OPKBDFURTUPNBF-UHFFFAOYSA-N n,n-diethyl-3-methyloxiran-2-amine Chemical compound CCN(CC)C1OC1C OPKBDFURTUPNBF-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- -1 aminoethylaminopropyl Chemical group 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 6
- 239000003431 cross linking reagent Substances 0.000 claims description 5
- 230000010365 information processing Effects 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000006872 improvement Effects 0.000 claims description 4
- LRWZZZWJMFNZIK-UHFFFAOYSA-N 2-chloro-3-methyloxirane Chemical compound CC1OC1Cl LRWZZZWJMFNZIK-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 3
- 239000003085 diluting agent Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000012074 organic phase Substances 0.000 claims description 3
- 238000000016 photochemical curing Methods 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 3
- 239000013557 residual solvent Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052802 copper Inorganic materials 0.000 abstract description 12
- 239000010949 copper Substances 0.000 abstract description 12
- 230000002950 deficient Effects 0.000 abstract description 4
- 230000008439 repair process Effects 0.000 abstract description 4
- 238000003754 machining Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention belongs to the technical field of half-hole tinning treatment of SIP module boards, and discloses a method for improving half-hole flash of a system packaging module by wet film coating and application thereof. The method for improving the half-hole flash of the system packaging module by wet film coating comprises the following steps of pre-working, drilling, electroplating, outer layer circuit, welding prevention, printing selective plating oil, half-hole wet film coating, half-hole dragging, acid etching, writing, surface treatment and post-working. The invention adopts a method of double protection of plug ink and wet film coating, the anti-plating oil plug hole ensures the hardness of the wall of the half-hole, avoids the large flash generated by high-ductility electroplated copper in the machining process, and the wet film coating anti-plating oil half-hole which is not fully covered by the anti-plating oil, thereby providing safer protection measures for the half-hole and the hole ring in the process of etching and removing the flash. Solves the problem of half hole wall burrs from root, avoids the manual repair cost of half hole burrs, and solves the problem that the defective repair causes the stripping of hole copper or the defective board is lost to the client side to cause higher rejection.
Description
Technical Field
The invention belongs to the technical field of SIP module board half-hole tinning treatment, and discloses a method for improving half-hole flash of a system packaging module by wet film coating, a 5G system packaging module board, a half-hole HDI electronic product and a 5G data information processing terminal.
Background
At present, according to the outer layer line grade design, the main stream technology is manufactured according to the following flow, and the specific contents are as follows:
(1) The linewidth of the outer layer is more than or equal to 3/3mil, a positive tinning is adopted to protect half holes, and alkaline etching is performed after half holes are fished out; the manufacturing process comprises the following steps: pre-process (all processes from opening to last press-fit), drilling (laser before drilling including blind hole design), electroplating (hole to be filled with blind hole), outer layer graph, graph electricity, half-hole fishing, outer layer circuit (alkaline etching, half-hole flash removing in the process), anti-welding, characters, surface treatment and post-process.
(2) The line spacing of the outer layer line width is less than 3/3mil, and the process capability requirement of a positive process is exceeded, only negative film production can be adopted, and half holes in the process are not etched, so that burrs and burrs on the hole walls caused by the half hole dragging process can remain, and bad problems such as soldering tin short circuit and the like are caused; the manufacturing process comprises the following steps: the method comprises the following steps of pre-working procedures (all procedures from opening to last pressing), drilling (including laser drilling for blind hole design), electroplating (including hole filling for blind hole), outer layer circuits, welding prevention, characters, half-hole dragging (half-hole burr residue is serious, double-edge drag-out knife processing is needed, certain improvement is needed), surface treatment and post working procedures.
(3) The method is an improvement of the method (2), the hole is plugged and covered by adopting selective printing ink before the half hole is fished, and then the etching line is etched, so that burrs and burrs on the hole wall are removed by rapid etching; the manufacturing process comprises the following steps: the method comprises the following steps of pre-working procedures (all procedures from opening to last pressing), drilling (including laser drilling for blind hole design), electroplating (including hole filling for blind hole design), outer layer circuit, anti-welding, printing plating oil, half-hole fishing, acid etching (flash can be removed, but part of hole wall anti-welding ink is not 100% covered, punctiform hole breaking exists in etching), characters, surface treatment and post working procedures.
Through the above analysis, the problems and defects existing in the prior art are as follows: (1) The method 1 can only be applied to the traditional low-end half-hole module board, mainly 2-4G SIP, and has the advantages of less I/O quantity and line width and line spacing of more than 3/3 mil. (2) method 2 fails to radically remove half-hole wall burrs. And (3) the method 3 cannot solve the point-shaped hole breaking problem of the half hole wall. (4) The inner and outer layers of the 5G system package (SIP) module board are 2 to 2.5mil line width line spacing, which exceeds the line capacity of the alkaline etching mode, and cannot be manufactured by adopting the flow of the method 1.
The difficulty of solving the problems and the defects is as follows: in order to meet the line processing capacity, the SIP module board of the fine line must adopt a negative film flow, but the disadvantage of the negative film flow is that the half hole wall burrs are fished in a forming mode, because the hole wall electroplated copper has good ductility and soft characteristics, the fine hole wall copper skin cannot be effectively removed in the forming and half hole fishing process, which is called burrs, and once the burrs are longer, network short circuit is caused between half holes in the soldering process. At present, selective ink plug holes and surface coverage are adopted, acid etching lines are adopted after half holes are formed and fished, burrs and burrs on the hole walls are removed by rapid etching, but partial selective ink on the hole walls is not 100% covered, and punctiform hole breaks are formed by etching
The meaning of solving the problems and the defects is as follows: after finishing the oil plating, the method adopts a wet film to coat in a tiny gap between the wall of the half hole and the oil plating, and has better sealing effect on the hole wall of the hole and the gap of the oil plating because the wet film has good flowing filling property, the copper of the half hole is protected in a double-layer manner, the flash is removed by acid etching after the half hole is fished, and meanwhile, the copper of the hole can not be corroded by liquid medicine penetrating into the gap.
Disclosure of Invention
In order to overcome the problems in the related art, the disclosed embodiments of the present invention provide a method for improving half-hole flash of a system package module by wet film coating, a 5G system package module board, a half-hole HDI electronic product, and a 5G data information processing terminal. A method for improving half-hole flash of a 5G system packaging module by wet film coating.
The technical scheme is as follows: a method of wet film coating to improve half-hole flash of a system in package module, comprising: after the fine circuit of the system packaging module is printed with the selective plating oil, a half-hole wet film is coated with a protective layer to serve as an acid etching resist, a half-hole is plugged, and then the half-hole is fished.
In the invention, the oil-plated plug hole is selected to play a main role, and the wet film coating plays a role of patching. And in the process of removing burrs by etching after the oil plating hole is selected, the oil plating cannot ensure the whole and nonporous broken of the half hole wall, and a layer of wet film is covered on the basis of oil plating resistance by virtue of the fluidity and the easily-removed characteristic of the wet film, so that the effect of protecting the hole wall by 100% is achieved, and the problem of broken hole wall caused by half hole etching is avoided.
In one embodiment, the half-hole wet film coating protective layer adopts wet film coating plating resist oil to plug holes of the half-holes. The plating-resistant oil coated by the wet film consists of, by weight, 50-60 parts of main photo-curing resin, 30-35 parts of filler, 30-50 parts of cage-type silsesquioxane cross-linking agent, 10-15 parts of reactive diluent, 5-7 parts of photoinitiator, 3-6 parts of pigment and 15-20 parts of solvent;
The preparation method for coating the plating oil resistance by adopting the wet film comprises the following steps:
Adding deionized water, tetrabutylammonium hydroxide and isopropanol into a round-bottom flask, continuously stirring at a mass ratio of 15-25:0.50-0.80:35-45 and a speed of 200-400 RPM, heating to 35-45 ℃, slowly dropwise adding aminoethylaminopropyl trimethoxysilane, continuously stirring at a speed of 200-400 RPM for 2-3 hours, heating to 85-90 ℃, reacting for 24-30 hours, filtering to obtain white powder, and vacuum drying for 10-18 hours to obtain solid aminoethylaminopropyl cage-type silsesquioxane;
Step two, adding epoxy chloropropane and diethylamine in a molar mass ratio of 1:3-4 into a flask, slowly dripping 10g-20g of deionized water, reacting for 1 h-2 h at 35-40 ℃, then cooling to 25-35 ℃, dissolving sodium hydroxide in water to prepare a solution, adding the solution into a reaction bottle, and continuously stirring at a speed of 200-400 RPM for 30-50 min; separating out an organic phase by using a separating funnel, and performing water washing, extraction and drying treatment to obtain N, N-diethylamino-1, 2-epoxypropane;
Step three, taking N, N-diethylamino-1, 2-epoxypropane in a four-necked flask, heating to 75-85 ℃, dissolving the synthesized aminoethylaminopropyl cage-type silsesquioxane in methanol, slowly dropwise adding the solution into the four-necked flask filled with the N, N-diethylamino-1, 2-epoxypropane under continuous stirring at the speed of 200-400 RPM, and carrying out reflux reaction for 2-6 h at the temperature of 75-85 ℃; after stopping the reaction, evaporating the solvent, and drying the residual solvent at 75-85 ℃ to obtain yellow viscous liquid, namely the liquid cage-type silsesquioxane, wherein in one embodiment, the wet film coating plating oil resistance does not cover the hole wall by 100%.
In one embodiment, the fine line is less than 3/mil in linewidth.
In one embodiment, the method for improving half-hole flash of system in package module by wet film coating further comprises
The method comprises the following steps: because the 5G SIP module is a high-order (2-order) HDI, the flow is longer, so the flow before the last pressing is collectively called a pre-procedure.
Drilling (laser blind holes and mechanical drilling, and 5G SIP module is accurate wiring, and design fool generally contains laser blind holes).
Electroplating (electroplating is a conventional process and can meet the copper specification of the copper hole of the client surface).
The outer layer of circuit (the outer layer is usually fine circuit, the line width of the minimum 50um is 50 um), and the outer layer is etched on the plate edge to make the half hole wall and the hole ring electrically connected with the plate edge.
Solder resist (conventional process, like ordinary PCB, board edge is required to be tin plated at the edge position and solder resist ink cannot be covered entirely).
Printing and plating oil (screen printing with a screen of a blocking point is similar to the flow of a solder mask plug hole).
Half-hole wet film coating (inner layer wet film coating line operation is adopted, the wet film is a photosensitive etching resist, and the thickness is about 10 um).
Half-hole fishing (adopting molding equipment, and one time before and after rough fishing and finish fishing).
Acid etching (etching lines on the outer layer, etching speed of 4-5m/min is common, and etching spray pressure is unchanged).
Film stripping (the alkaline solution spraying of the dry film stripping line is completed, and the speed is about 1-1.5 m/min).
Text (conventional process, same as ordinary PCB, does not make special treatment).
Surface treatment (corresponding surface treatment is carried out according to the design requirements of customers).
Post-processing (molding, testing, FQC, packaging, etc.).
Another object of the present invention is to provide a 5G system-in-package module board manufactured according to the method of improving half-hole flash of a system-in-package module by wet film coating.
Another objective of the present invention is to provide a half-hole HDI electronic product, where the half-hole HDI electronic product is mounted with the 5G system package module board.
Another object of the present invention is to provide a 5G data information processing terminal, in which the 5G system package module board is mounted.
By combining all the technical schemes, the invention has the advantages and positive effects that:
According to the invention, in the fine circuit (line width is within 3/mil) half-hole module board adjusting process, the method of double protection of plugging ink and wet film coating is adopted, the oil-resistant plugged holes ensure the hardness of the walls of the half-hole, the high-ductility electroplated copper is prevented from generating larger burrs in the machining process, and the wet film coating oil-resistant half-holes which are not fully covered by the oil-resistant half-hole module board is used for providing safer protection measures for the half-holes and hole rings in the process of etching and deburring. Solves the problem of half hole wall burrs from root, avoids the manual repair cost of half hole burrs, and solves the problem that the defective repair causes the stripping of hole copper or the defective board is lost to the client side to cause higher rejection.
In a word, the invention can effectively solve the problem of half-hole wall flash of the 5G system packaging module board, and is mainly a half-hole HDI product with fine lines on the outer layer.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure of the invention as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
Fig. 1 is a flowchart of a method for improving half-hole flash of a system in package module by wet film coating according to an embodiment of the present invention.
FIG. 2 is a graph showing the half-hole fishing effect after ink is not plugged in the prior art and a graph showing the half-hole fishing effect after ink is plugged by the method according to the invention.
Wherein, fig. 2 (a) is a diagram showing the effect of half-hole fishing after ink is not plugged in the prior art; FIG. 2 (b) is a graph showing the effect of half-hole fishing after ink plugging in the method of the present invention.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit or scope of the invention, which is therefore not limited to the specific embodiments disclosed below.
The technical terms related to the invention include:
The SIP (SYSTEM IN PACKAGE, system packaging module) is mainly used for the Internet of things and the Internet of vehicles.
HDI is an abbreviation for high density interconnect (HIGH DENSITY Interconnector), a technique for producing printed circuit boards, a circuit board with a relatively high line distribution density using micro-blind buried via technology. HDI is a compact product designed specifically for small-volume users.
The method for improving half-hole flash of the system packaging module by wet film coating provided by the invention comprises the following steps: after the fine circuit of the system packaging module is printed with the selective plating oil, a half-hole wet film is coated with a protective layer to serve as an acid etching resist, a half-hole is plugged, and then the half-hole is fished. The oil-plating plug hole is selected to play a main role, and the wet film coating plays a role in patching. And in the process of removing burrs by etching after the oil plating hole is selected, the oil plating cannot ensure the whole and nonporous broken of the half hole wall, and a layer of wet film is covered on the basis of oil plating resistance by virtue of the fluidity and the easily-removed characteristic of the wet film, so that the effect of protecting the hole wall by 100% is achieved, and the problem of broken hole wall caused by half hole etching is avoided.
In a preferred embodiment, the half-hole wet film coating protective layer adopts wet film coating plating resist oil to plug holes of the half-holes.
In a preferred embodiment, the wet film coated plating resist does not cover the pore walls by 100%.
In a preferred embodiment, the fine line is line-width-to-line spacing less than 3/mil.
Specifically, taking a 5G system packaging module as an example, as shown in fig. 1, the method for improving half-hole flash of the system packaging module by wet film coating provided by the invention comprises the following steps:
In a preferred embodiment, the method for improving half-hole flash of a system in package module by wet film coating further comprises: the method comprises the following steps: because the 5G SIP module is a high-order (2-order) HDI, the flow is longer, so the flow before the last pressing is collectively called a pre-procedure.
Drilling (laser blind holes and mechanical drilling, and 5G SIP module is accurate wiring, and design fool generally contains laser blind holes).
Electroplating (electroplating is a conventional process and can meet the copper specification of the copper hole of the client surface).
The outer layer of circuit (the outer layer is usually fine circuit, the line width of the minimum 50um is 50 um), and the outer layer is etched on the plate edge to make the half hole wall and the hole ring electrically connected with the plate edge.
Solder resist (conventional process, like ordinary PCB, board edge is required to be tin plated at the edge position and solder resist ink cannot be covered entirely).
Printing and plating oil (screen printing with a screen of a blocking point is similar to the flow of a solder mask plug hole).
Half-hole wet film coating (inner layer wet film coating line operation is adopted, the wet film is a photosensitive etching resist, and the thickness is about 10 um).
Half-hole fishing (adopting molding equipment, and one time before and after rough fishing and finish fishing).
Acid etching (etching lines on the outer layer, etching speed of 4-5m/min is common, and etching spray pressure is unchanged).
Film stripping (the alkaline solution spraying of the dry film stripping line is completed, and the speed is about 1-1.5 m/min).
Text (conventional process, same as ordinary PCB, does not make special treatment).
Surface treatment (corresponding surface treatment is carried out according to the design requirements of customers).
Post-processing (molding, testing, FQC, packaging, etc.).
In the preferred embodiment of the invention, the half-hole wet film coating can be made on an inner layer wet film line commonly used in the existing industry or a small roll coater is purchased for independent operation, so that other working procedures are prevented from being influenced.
In the preferred embodiment of the invention, the plating resist oil coated by adopting the wet film consists of 50-60 parts by weight of main photo-curing resin, 30-35 parts by weight of filler, 30-50 parts by weight of cage-type silsesquioxane cross-linking agent, 10-15 parts by weight of reactive diluent, 5-7 parts by weight of photoinitiator, 3-6 parts by weight of pigment and 15-20 parts by weight of solvent;
The preparation method for coating the plating oil resistance by adopting the wet film comprises the following steps:
Adding deionized water, tetrabutylammonium hydroxide and isopropanol into a round-bottom flask, continuously stirring at a mass ratio of 15-25:0.50-0.80:35-45 and a speed of 200-400 RPM, heating to 35-45 ℃, slowly dropwise adding aminoethylaminopropyl trimethoxysilane, continuously stirring at a speed of 200-400 RPM for 2-3 hours, heating to 85-90 ℃, reacting for 24-30 hours, filtering to obtain white powder, and vacuum drying for 10-18 hours to obtain solid aminoethylaminopropyl cage-type silsesquioxane;
Step two, adding epoxy chloropropane and diethylamine in a molar mass ratio of 1:3-4 into a flask, slowly dripping 10g-20g of deionized water, reacting for 1 h-2 h at 35-40 ℃, then cooling to 25-35 ℃, dissolving sodium hydroxide in water to prepare a solution, adding the solution into a reaction bottle, and continuously stirring at a speed of 200-400 RPM for 30-50 min; separating out an organic phase by using a separating funnel, and performing water washing, extraction and drying treatment to obtain N, N-diethylamino-1, 2-epoxypropane;
Step three, taking N, N-diethylamino-1, 2-epoxypropane in a four-necked flask, heating to 75-85 ℃, dissolving the synthesized aminoethylaminopropyl cage-type silsesquioxane in methanol, slowly dropwise adding the solution into the four-necked flask filled with the N, N-diethylamino-1, 2-epoxypropane under continuous stirring at the speed of 200-400 RPM, and carrying out reflux reaction for 2-6 h at the temperature of 75-85 ℃; and (3) evaporating to remove the solvent after stopping the reaction, and drying the residual solvent at 75-85 ℃ to obtain yellow viscous liquid, namely the liquid cage-type silsesquioxane.
The positive effects of the present invention are further described below in conjunction with experimental results.
FIG. 2 is a graph showing the half-hole fishing effect after ink is not plugged in the prior art and a graph showing the half-hole fishing effect after ink is plugged by the method according to the invention. In fig. 2: (a) fishing out a half-hole effect graph after ink is not plugged in the prior art; (b) the half-hole effect diagram is fished after the ink is plugged by the method.
Experiments show that: the liquid cage type silsesquioxane cross-linking agent prepared by the invention has good compatibility and dispersibility, and the ultraviolet light curing solder resist ink prepared by adding the cage type silsesquioxane has the characteristics of high temperature resistance and high hardness, and the high temperature resistance reaches more than 280 ℃, and is mainly suitable for the welding process of printed circuit boards. The test analysis shows that the temperature of the sample prepared by the invention is 400 ℃ when the thermal weight loss is 5% -8%, the glass transition temperature is 145 ℃, the tensile strength is 60-70 MPa, the breaking elongation is 50-80%, and the toughness is 1227Pa. The heat resistance of the ink provided by the invention is obviously improved by adding the cage-type silsesquioxane as a cross-linking agent.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It is to be understood that the present disclosure is not limited to the precise arrangements and instrumentalities shown in the drawings, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the present disclosure should be limited by the attached claims.
Claims (6)
1. A method for improving half-hole flash of a system in package by wet film coating, the method comprising:
After printing selective plating oil on a fine circuit of a system packaging module, coating a protection layer on a half-hole wet film, taking the protection layer as an acid etching resist, plugging a half-hole, and then fishing the half-hole;
the half-hole wet film coating protective layer adopts wet film coating plating oil resistance, and the half-hole is plugged;
The wet film coating plating-resistant oil does not cover the hole wall by 100 percent;
The plating-resistant oil coated by the wet film consists of, by weight, 50-60 parts of main photo-curing resin, 30-35 parts of filler, 30-50 parts of cage-type silsesquioxane cross-linking agent, 10-15 parts of reactive diluent, 5-7 parts of photoinitiator, 3-6 parts of pigment and 15-20 parts of solvent;
The preparation method for coating the plating oil resistance by adopting the wet film comprises the following steps:
Adding deionized water, tetrabutylammonium hydroxide and isopropanol into a round-bottom flask, continuously stirring at a mass ratio of 15-25:0.50-0.80:35-45 and a speed of 200-400 RPM, heating to 35-45 ℃, slowly dropwise adding aminoethylaminopropyl trimethoxysilane, continuously stirring at a speed of 200-400 RPM for 2-3 hours, heating to 85-90 ℃, reacting for 24-30 hours, filtering to obtain white powder, and vacuum drying for 10-18 hours to obtain solid aminoethylaminopropyl cage-type silsesquioxane;
Step two, adding epoxy chloropropane and diethylamine in a molar mass ratio of 1:3-4 into a flask, slowly dripping 10g-20g of deionized water, reacting for 1 h-2 h at 35-40 ℃, then cooling to 25-35 ℃, dissolving sodium hydroxide in water to prepare a solution, adding the solution into a reaction bottle, and continuously stirring at a speed of 200-400 RPM for 30-50 min; separating out an organic phase by using a separating funnel, and performing water washing, extraction and drying treatment to obtain N, N-diethylamino-1, 2-epoxypropane;
Step three, taking N, N-diethylamino-1, 2-epoxypropane in a four-necked flask, heating to 75-85 ℃, dissolving the synthesized aminoethylaminopropyl cage-type silsesquioxane in methanol, slowly dropwise adding the solution into the four-necked flask filled with the N, N-diethylamino-1, 2-epoxypropane under continuous stirring at the speed of 200-400 RPM, and carrying out reflux reaction for 2-6 h at the temperature of 75-85 ℃; and (3) evaporating to remove the solvent after stopping the reaction, and drying the residual solvent at 75-85 ℃ to obtain yellow viscous liquid, namely the wet film coating anti-plating oil.
2. The method of wet film coating improvement system in packaging a half-hole flash of a module of claim 1, wherein the fine line has a linewidth spacing of less than 3/3mil.
3. The method of wet film coating improvement system in packaging module half-hole flash as set forth in claim 1, further comprising: drilling holes; electroplating; an outer layer line; welding prevention; printing and plating oil; half-hole wet film coating, namely, inner-layer wet film coating wires are adopted, and the wet film thickness is 10um; fishing out a half hole; acid etching, namely etching the outer layer, wherein the etching speed is 4-5 m/min; film stripping; characters; and (5) surface treatment.
4. A 5G system-in-package module board, wherein the 5G system-in-package module board is manufactured according to the method of improving a half-hole flash of a system-in-package module by wet film coating according to any one of claims 1 to 3.
5. A half-hole HDI electronic product, wherein the half-hole HDI electronic product is mounted with the 5G system package module board of claim 4.
6. A 5G data information processing terminal, wherein the 5G data information processing terminal is mounted with the 5G system package module board according to claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111594403.XA CN114245587B (en) | 2021-12-23 | 2021-12-23 | Method for improving half-hole flash of system package module by wet film coating and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111594403.XA CN114245587B (en) | 2021-12-23 | 2021-12-23 | Method for improving half-hole flash of system package module by wet film coating and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114245587A CN114245587A (en) | 2022-03-25 |
| CN114245587B true CN114245587B (en) | 2024-05-10 |
Family
ID=80762397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111594403.XA Active CN114245587B (en) | 2021-12-23 | 2021-12-23 | Method for improving half-hole flash of system package module by wet film coating and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114245587B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117082746B (en) * | 2023-10-12 | 2024-01-23 | 四川英创力电子科技股份有限公司 | Processing method of half-etched copper characters |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160121291A (en) * | 2015-04-10 | 2016-10-19 | (주)영진프로텍 | Half hole of pcb machining method and the pcb manufactured from the same |
| CN108575058A (en) * | 2017-03-07 | 2018-09-25 | 惠州中京电子科技有限公司 | A kind of half bore plate producing process |
| CN112533399A (en) * | 2020-12-17 | 2021-03-19 | 惠州市润众供应链管理有限公司 | PCB metallization half-hole manufacturing process |
-
2021
- 2021-12-23 CN CN202111594403.XA patent/CN114245587B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160121291A (en) * | 2015-04-10 | 2016-10-19 | (주)영진프로텍 | Half hole of pcb machining method and the pcb manufactured from the same |
| CN108575058A (en) * | 2017-03-07 | 2018-09-25 | 惠州中京电子科技有限公司 | A kind of half bore plate producing process |
| CN112533399A (en) * | 2020-12-17 | 2021-03-19 | 惠州市润众供应链管理有限公司 | PCB metallization half-hole manufacturing process |
Non-Patent Citations (1)
| Title |
|---|
| 液态感光成像抗电镀、抗蚀刻油墨应用;李学魁;;网印工业;20060715(07);33-35 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114245587A (en) | 2022-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100521868C (en) | Multilayer printed wiring board and method of producing multilayer printed wiring board | |
| CN101652401B (en) | Epoxy resin composition, prepreg, laminate, multilayer printed wiring board, semiconductor device, insulating resin sheet, and method for manufacturing multilayer printed wiring board | |
| US20090027864A1 (en) | Printed circuit board and manufacturing method thereof | |
| US6555762B2 (en) | Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition | |
| KR100430203B1 (en) | Semiconductor device and manufacturing method of the same | |
| KR102082641B1 (en) | Method for manufacturing wiring board | |
| CN101583489A (en) | Insulating resin sheet multilayer body, multilayer printed wiring board obtained by laminating the insulating resin sheet multilayer bodies | |
| CN114245587B (en) | Method for improving half-hole flash of system package module by wet film coating and application | |
| WO2002044274A1 (en) | Liquid thermosetting resin composition, printed wiring boards and process for their production | |
| KR20020022533A (en) | Semiconductor device and manufacturing method the same and mounting structure of semiconductor device | |
| CN101826496A (en) | Printed wiring board and manufacturing method thereof | |
| CN108200721A (en) | A kind of production method of printed circuit board | |
| CN101925260A (en) | multilayer printed circuit board | |
| CN101584259A (en) | Multilayer body, method for producing substrate, substrate and semiconductor device | |
| CN106535482A (en) | Resin-filled back drilling hole processing method of PCB (Printed Circuit Board) | |
| US20160135297A1 (en) | Via in a printed circuit board | |
| CN108575058A (en) | A kind of half bore plate producing process | |
| WO2009099065A1 (en) | Resist ink and method for manufacturing multilayer printed wiring board | |
| JP4259510B2 (en) | Epoxy resin inorganic composite sheet, circuit board, 3D circuit board | |
| CN101977480A (en) | Manufacturing process of fine circuits of printed circuit board | |
| CN1893765B (en) | Multilayer printed wiring board, solder resist composition, method for manufacturing multilayer printed wiring board, and semiconductor device | |
| CN101765341B (en) | Molding structure and method for laser-assisting base plate line | |
| CN101870449B (en) | Multilayer line manufacturing process of wafer-level micro electromechanical system chip encapsulation technology | |
| KR20080092783A (en) | Printed circuit board and method of manufacturing the same | |
| US20190345325A1 (en) | Resin composition for printed circuit board and integrated circuit package, and product using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |