CN114243453A - Wave-locking optical path of semiconductor laser - Google Patents

Wave-locking optical path of semiconductor laser Download PDF

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Publication number
CN114243453A
CN114243453A CN202210170743.8A CN202210170743A CN114243453A CN 114243453 A CN114243453 A CN 114243453A CN 202210170743 A CN202210170743 A CN 202210170743A CN 114243453 A CN114243453 A CN 114243453A
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laser
wave
locking
reflector
light
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CN114243453B (en
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周少丰
黄良杰
丁亮
欧阳春宝
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Shenzhen Xinghan Laser Technology Co Ltd
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Shenzhen Xinghan Laser Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention relates to a wave-locking light path of a semiconductor laser, which comprises a light path shaping unit, at least one first wave-locking module and an optical fiber, wherein the first wave-locking module comprises a first wave-locking unit, a first laser unit and a first steering unit, the first wave-locking unit emits first guide laser with single wavelength which is divided into two light areas in the fast axis direction, one light area penetrates through the first steering unit and irradiates to the first laser unit, so that the first laser unit emits the first wave-locking laser, the first wave-locking laser irradiates to the light path shaping unit after being steered by the first steering unit, the other light area of the first guide laser directly irradiates to the light path shaping unit after being steered by the first steering unit, and the light path shaping unit focuses and couples the laser of the first wave-locking laser into the optical fiber; according to the wave-locking optical path, the other row of laser chips can be subjected to wave-locking simultaneously by only performing wave-locking treatment on one row of laser chips, the using number of the VBG wave-locking devices is reduced, and the wave-locking optical path is stable in work.

Description

Wave-locking optical path of semiconductor laser
Technical Field
The invention relates to the field of lasers, in particular to a wave-locking optical path of a semiconductor laser.
Background
The laser is a device capable of emitting laser, a common semiconductor laser is widely applied to the fields of industrial processing, military, medical treatment, security protection and the like due to the advantages of high efficiency, long service life and the like, in order to improve the quality of output laser, the internal optical path of the semiconductor laser is subjected to wave locking treatment, and the current wave locking mode of the semiconductor laser is divided into single-path wave locking and multi-path wave locking.
Please refer to the patent document CN20338897U, which discloses a semiconductor laser adopting a single optical path wavelength-locked mode, wherein each laser chip is correspondingly provided with a integrated bragg grating (VBG), but as the output power of the semiconductor increases, the number of the laser chips increases, so that the number of the needed integrated bragg gratings increases, the product cost and the volume of the housing increase, and the output power of the semiconductor laser is affected by energy loss after the laser emitted from each chip irradiates the integrated bragg grating.
Please refer to the patent document CN203071399U, which discloses a semiconductor laser adopting a multi-optical path wave-locking mode, wherein a plurality of laser chips are wave-locked by an integral bragg grating, so that the energy density per unit area of the integral bragg grating is large, and the integral bragg grating is easily burned out, which seriously affects the service life and the wave-locking quality of the semiconductor laser.
Disclosure of Invention
The invention aims to provide a wave-locking optical path of a semiconductor laser, which can lock the other row of laser chips at the same time by only locking one row of laser chips, reduce the using number of VBG wave-locking devices, avoid the problem that the VBG wave-locking devices are burnt out due to overlarge laser energy density emitted to the VBG wave-locking devices and ensure the working stability of the wave-locking optical path.
In a first aspect, the invention provides a wave-locking optical path of a semiconductor laser, which comprises an optical path shaping module and at least one wave-locking module, wherein the wave-locking module comprises a wave-locking unit, a laser unit and a steering unit;
the wave locking unit comprises a guide chip and a VBG wave locker, the guide chip emits guide laser, the guide laser after collimation emits to the VBG wave locker to complete wave locking, the guide laser after wave locking comprises a first light area and a second light area in the fast axis direction, the first light area emits to the light path shaping module after passing through the steering unit, and the second light area emits to the laser unit after passing through the steering unit;
the laser unit comprises a laser chip, and the height of the step where the laser chip is located is lower than that of the step where the guide chip is located;
the first light area enters the optical fiber after being focused by the light path shaping module;
the second light area induces the laser chip to emit wave locking laser with a single wavelength, the wave locking laser and the guide laser have the same wavelength, the wave locking laser irradiates the steering unit, the wave locking laser steered by the steering unit irradiates the light path shaping module, and the steered wave locking laser enters an optical fiber after being focused by the light path shaping module.
In one embodiment of the invention, the steering unit comprises a first mirror and a second mirror arranged oppositely;
the first light zone is located below the second light zone;
the vertical height of the top surface of the first reflector is not less than that of the top surface of the second reflector;
the first light area is emitted to the first reflector, and the first light area which is turned by the first reflector is emitted to the light path shaping module;
the second light area sequentially passes through the upper parts of the first reflector and the second reflector and is shot to the laser unit;
the laser chip emits wave-locking laser with fixed wavelength to the second reflector, and the wave-locking laser after being deflected by the second reflector is emitted to the light path shaping module.
In one embodiment of the invention, the steering unit comprises a first mirror, a second mirror, and a third mirror;
the first light area is located above the second light area;
the first reflector is arranged in the light path direction of the guided laser, the second reflector is arranged in the light emergent direction of the laser unit, the third reflector is arranged in the light path reflecting direction of the first reflector, the third reflector is aligned with the second reflector, the vertical height of the top surface of the first reflector is greater than that of the top surface of the third reflector, and the vertical height of the top surface of the third reflector is greater than that of the top surface of the second reflector;
the first light zone turned by the first reflector passes through the upper part of the third reflector and is emitted to the light path shaping module;
the second light area deflected by the first reflecting mirror is emitted to the third reflecting mirror and deflected by the third reflecting mirror to be emitted to the laser unit from the upper part of the second reflecting mirror;
the laser chip emits wave-locking laser with fixed wavelength to the second reflector, and the wave-locking laser after being deflected by the second reflector is emitted to the light path shaping module.
In one embodiment of the present invention, the wave-locking module comprises a first wave-locking module and a second wave-locking module, and the third mirror in the first wave-locking module is aligned with the first mirror in the second wave-locking module.
In one embodiment of the present invention, the wave-locking module includes a first wave-locking module and a second wave-locking module, and the third mirrors in the first wave-locking module are staggered with the first mirrors in the second wave-locking module.
In another aspect, the present invention provides a wave-locking optical path of a semiconductor laser, including an optical path shaping module and a first wave-locking module, where the first wave-locking module includes a first wave-locking unit, a first laser unit, and a first steering unit;
the first wave locking unit comprises a first guide chip and a second guide chip which are arranged in a stepped manner, the vertical height of a step where the first guide chip is located is larger than that of a step where the second guide chip is located, the first guide chip emits first guide laser with a single wavelength after being locked by a first VBG wave locker, the second guide chip emits second guide laser with a single wavelength after being locked by a second VBG wave locker, and the second guide laser after being collimated is emitted to the first steering unit;
the first laser unit comprises a first laser chip, and the vertical height of a step where the first laser chip is located is lower than that of a step where the first guide chip is located;
the first steering unit comprises a first reflector, a second reflector and a first double-sided reflector, the first reflector is arranged in the light emitting direction of the first guide laser, the first double-sided reflector comprises a first reflecting surface and a second reflecting surface, the first reflecting surface is positioned in the light path reflecting direction of the first reflector, the second reflecting surface is positioned in the light emitting direction of the second guide laser, the second reflector is arranged in the light emitting direction of the first laser unit, the vertical height of the top surface of the first reflector is greater than that of the top surface of the first double-sided reflector, and the vertical height of the top surface of the first double-sided reflector is greater than that of the top surface of the second reflector;
the first guided laser comprises a first light area and a second light area in the direction of a fast axis, and the first light area is positioned above the second light area;
the first light zone steered by the first reflector passes through the upper part of the first double-sided reflector and is emitted to the light path shaping module, and the first light zone is focused by the light path shaping module and then enters an optical fiber;
the second light area reflected by the first reflector is emitted to the first reflecting surface, is deflected by the first reflecting surface, passes through the upper part of the second reflector and is emitted to the first laser unit;
the first laser chip emits first wave-locking laser with fixed wavelength, the first wave-locking laser irradiates the second reflector, is deflected by the second reflector, irradiates the light path shaping module, is focused by the light path shaping module and enters an optical fiber;
the second guide laser is emitted to the second reflecting surface, is emitted to the light path shaping module after being turned by the second reflecting surface, and enters the optical fiber after being focused by the light path shaping module.
In one embodiment of the present invention, the wave-locking optical path further includes a second wave-locking module, and the second wave-locking module includes a second wave-locking unit, a second laser unit, and a second steering unit;
the second wave locking unit comprises a third guide chip, the third guide chip emits third guide laser with a single wavelength after being locked by a third VBG wave locker, and the collimated third guide laser emits to the second steering unit;
the second laser unit comprises a second laser chip, and the vertical height of the step where the second laser chip is located is smaller than that of the step where the second guide chip is located;
the second steering unit comprises a second double-sided reflector and a fourth reflector, the second double-sided reflector comprises a third reflecting surface and a fourth reflecting surface, the third reflecting surface is positioned in the direction of a reflecting light path of the second reflecting surface, the fourth reflecting surface is positioned in the light emitting direction of the third guided laser, the fourth reflector is arranged in the light emitting direction of the second laser unit, the vertical height of the top surface of the second double-sided reflector is smaller than that of the top surface of the first double-sided reflector, and the vertical height of the top surface of the second double-sided reflector is larger than that of the top surface of the fourth reflector;
the second guided laser comprises a third light region and a fourth light region in the direction of a fast axis, and the third light region is positioned above the fourth light region;
the third light area which is turned by the second reflecting surface passes through the upper part of the second double-sided reflecting mirror and is emitted to the light path shaping module, and the third light area enters an optical fiber after being focused by the light path shaping module;
the fourth light zone turned by the second reflecting surface is emitted to the third reflecting surface, the fourth light zone turned by the third reflecting surface passes through the upper part of the fourth reflecting mirror and is emitted to the second laser unit, so that the second laser chip emits second wave-locking laser with fixed wavelength, the second wave-locking laser is turned by the fourth reflecting mirror and is emitted to the light path shaping module, and the second wave-locking laser is focused and coupled into an optical fiber through the light path shaping module;
and the third guide laser is directed to the light path shaping module after being deflected by the fourth reflecting surface, and enters an optical fiber after being focused by the light path shaping module.
In an embodiment of the present invention, the optical path shaping module includes a fast axis focusing lens and a slow axis focusing lens, and the laser emitted to the optical path shaping module sequentially passes through the fast axis focusing lens and the slow axis focusing lens and then is focused into the optical fiber.
The invention has the beneficial effects that: compared with the prior art, the device can lock the other row of laser chips simultaneously by only locking the one row of laser chips, greatly reduces the using quantity of the VBG wave locking device, ensures that the laser of the shot-in VBG wave locking device is single laser shot out by a single chip, avoids the problem that the shot-in VBG wave locking device is burnt out due to overlarge laser energy density, and ensures the working stability of a wave locking light path.
Drawings
Fig. 1 is a schematic diagram of an integrated wave-locked optical path according to a first embodiment of the present invention.
Fig. 2 is a schematic diagram of a first guided laser in the fast axis direction according to a first embodiment of the present invention.
Fig. 3 is a schematic diagram of an integrated wave-locking optical path according to a second embodiment of the present invention.
Fig. 4 is a schematic diagram of the first guided laser in the fast axis direction according to the second embodiment of the present invention.
Fig. 5 is a schematic diagram of an integrated wave-locked optical path according to a third embodiment of the present invention.
Fig. 6 is a schematic diagram of the first guided laser in the fast axis direction according to the third embodiment of the present invention.
Fig. 7 is a schematic diagram of an integrated wave-locked optical path according to a fourth embodiment of the present invention.
Fig. 8 is a schematic diagram of a second guided laser in the fast axis direction according to the fourth embodiment of the present invention.
In the figure, the position of the upper end of the main shaft,
A. an optical path shaping unit; B. a first wave-locking module; C. an optical fiber;
100. a first wave-locking unit; 110. a first boot chip; 120. a first collimating lens; 130. a first VBG wave locker; 140. a first guide laser; 141. a first light region; 142. a second light region; 150. a second boot chip; 160. a third collimating lens; 170. a second VBG wave locker; 180. a second guided laser; 181. a third light region; 182. a fourth light region;
200. a first laser unit; 210. a first laser chip; 211. a first wave-locked laser; 220. a second collimating lens;
300. a first steering unit; 310. a first reflector; 320. a second reflector; 330. a first double-sided mirror; 331. a first reflective surface; 332. a second reflective surface; 340. a third reflector;
400. a fast axis focusing lens;
500. a slow axis focusing lens;
600. a second wave locking unit; 610. a third boot chip; 620. a fourth collimating lens; 630. a third VBG wave locker; 640. a third guided laser;
700. a second laser unit; 710. a second laser chip; 720. a fifth collimating lens;
800. a second steering unit; 810. a second double-sided mirror; 811. a third reflective surface; 812. a fourth reflective surface; 820. a fourth mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following describes a wave-locking optical path of a semiconductor laser in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "central," "longitudinal," "lateral," "upper," "lower," "left," "right," "inner," "outer," "front," "rear," "head," "tail," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the indicated orientations and positional relationships based on the orientation shown in the drawings for ease of describing the invention and to simplify the description, but do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example one
Referring to fig. 1-2, a wave-locking optical path of a semiconductor laser mainly includes an optical path shaping unit a for focusing coupling, at least a first wave-locking module B for outputting laser with fixed wavelength, and an optical fiber C, the first wave-locking module B comprises a first wave-locking unit 100, a first laser unit 200 and a first steering unit 300, wherein the first wave-locking unit 100 emits a first guide laser 140 with a single wavelength which is divided into two light regions in the fast axis direction, one of which passes from above the first turning unit 300 and is directed to the first laser unit 200, so that the first laser unit 200 emits the first lock laser light 211, the first wave-locked laser 211 is deflected by the first deflecting unit 300 and then emitted to the optical path shaping unit a, the other light area of the first guiding laser 140 is deflected by the first deflecting unit 300 and then directly emitted to the optical path shaping unit a, and the optical path shaping unit a focuses and couples the emitted laser into the optical fiber C.
Specifically, the first wave-locking unit 100 includes a first guiding chip 110, a first collimating lens 120, and a first VBG wave-locking device 130, where the first VBG wave-locking device 130 forms an external cavity resonance with the first guiding chip 110, so that the first guiding chip 110 is wave-locked to emit a first guiding laser 140 with a single wavelength, the first guiding laser 140 is collimated by the first collimating lens 120 and then emitted to the first steering unit 300, the first guiding laser 140 includes a first optical region 141 and a second optical region 142 in the fast axis direction after being collimated by the first collimating lens 120, and the first optical region 141 is located below the second optical region 142.
The first laser unit 200 includes a first laser chip 210 and a second collimating lens 220, and the first laser chip 210 is located at a vertical height lower than that of the first guide chip 110.
The first deflecting unit 300 includes a first reflecting mirror 310 and a second reflecting mirror 320, the first reflecting mirror 310 and the second reflecting mirror 320 are aligned, a vertical height of a top surface of the first reflecting mirror 310 is greater than a vertical height of a top surface of the second reflecting mirror 320, the first light region 141 is directed to the first reflecting mirror 310, the first light region 141 reflected by the first reflecting mirror 310 is directed to the optical path shaping unit a, a vertical height of the second light region 142 is greater than that of the first reflecting mirror 310, therefore, the second light region 142 sequentially passes above the first reflector 310 and the second reflector 320 and is emitted to the fifth collimating lens 720, the second light region 142 is focused and emitted to the light emitting surface of the first laser chip 210, the first laser chip 210 is induced to emit the first lock laser light 211 with a single wavelength, the first lock laser light 211 has the same wavelength as the first guide laser light 140, the first lock laser light 211 is emitted to the second mirror 320, and the first lock laser light 211 is deflected by the second mirror 320 and emitted to the optical path shaping unit a.
The optical path shaping unit a includes a fast axis focusing lens 400 and a slow axis focusing lens 500, and the first light region 141 reflected by the first reflecting mirror 310 and the first lock laser 211 steered by the second reflecting mirror 320 are sequentially and parallelly directed to the fast axis focusing lens 400 and the slow axis focusing lens 500, focused in the fast axis direction and the slow axis direction, and then directed into the optical fiber C.
It should be noted that, in this embodiment, the description is only given for the case that the wave-locking optical path includes a wave-locking module, the wave-locking optical path may further include two or more wave-locking modules, the wave-locking modules are distributed in an array, the guide chips in each wave-locking unit are arranged in a ladder manner, and the laser chips in each laser unit are arranged in a ladder manner.
This embodiment one compares prior art and realizes only locking ripples to one row of laser chip and handle and can realize locking ripples to one row other laser chip simultaneously, has reduced VBG wave locker's use quantity by a wide margin, and the laser of a directive VBG wave locker is the single laser that the single chip jetted out moreover, does not have the too big problem that burns out VBG wave locker of laser energy density of directive VBG wave locker, has guaranteed the stability of locking ripples light path work.
Example two
Referring to fig. 3-4, the difference from the first embodiment is:
(1) the first steering unit 300 includes a first reflecting mirror 310, a second reflecting mirror 320, and a third reflecting mirror 340, the first reflecting mirror 310 and the second reflecting mirror 320 are disposed in a staggered manner, the third reflecting mirror 340 is disposed in a direction of a reflected light path of the first reflecting mirror 310 and aligned with the second reflecting mirror 320, and a vertical height of a top surface of the third reflecting mirror 340 is greater than a vertical height of a top surface of the second reflecting mirror 320 and less than a vertical height of a top surface of the first reflecting mirror 310.
(2) The first guided laser light 140 is collimated by the first collimating lens 120 and includes a first light region 141 and a second light region 142 in the fast axis direction, and the first light region 141 is located above the second light region 142.
The first light region 141 is deflected by the first reflecting mirror 310 and then directly emitted to the optical path shaping unit a from above the third reflecting mirror 340, the second light region 142 is deflected by the first reflecting mirror 310 and then emitted to the third reflecting mirror 340, the second light region 142 deflected by the third reflecting mirror 340 passes above the second reflecting mirror 320 and is emitted to the first deflecting unit 300, so that the first laser chip 210 emits the first lock laser light 211 with a fixed wavelength, the wavelength of the first lock laser light 211 is equal to that of the first guided laser light 140, the first lock laser light 211 is emitted to the second reflecting mirror 320, and the first lock laser light 211 is deflected by the second reflecting mirror 320 and then emitted to the optical path shaping unit a.
The first light region 141 reflected by the first reflecting mirror 310 and the first lock laser light 211 deflected by the second reflecting mirror 320 are sequentially emitted to the fast axis focusing lens 400 and the slow axis focusing lens 500 in parallel, focused in the fast axis and slow axis directions, and then emitted into the optical fiber C.
It should be noted that, in this embodiment, the description is only given for the case that the wave-locking optical path includes a wave-locking module, and the wave-locking optical path may further include two or more wave-locking modules, and in order to ensure that no problem of laser shielding occurs between any two modules, the third reflecting mirror 340 in one wave-locking module and the first reflecting mirror 310 in another module may be aligned up and down or staggered.
EXAMPLE III
Referring to fig. 5-6, a wave-locking optical path of a semiconductor laser mainly includes an optical path shaping module a for focusing coupling, a first wave-locking module B for outputting laser light with a fixed wavelength, and an optical fiber C, where the first wave-locking module B includes a first wave-locking unit 100, a first laser unit 200, and a first steering unit 300.
Specifically, the first wave locking unit 100 includes a first guiding chip 110 and a second guiding chip 150 that are arranged in a step manner, the first guiding chip 110 and the second guiding chip 150 have the same model, the vertical height of the step where the first guiding chip 110 is located is greater than the height of the step where the second guiding chip 150 is located, a first collimating lens 120 is arranged in the light-emitting direction of the first guiding chip 110, a first VBG wave locker 130 is arranged in the light-emitting direction of the first collimating lens 120, a third collimating lens 160 is arranged in the light-emitting direction of the second guiding chip 150, and a second VBG wave locker 170 is arranged in the light-emitting direction of the third collimating lens 160.
The first guide chip 110 and the first VBG wave-locker 130 form external cavity resonance, so that the first guide chip 110 is wave-locked to emit first guide laser 140 with a single wavelength, the first guide laser 140 is collimated by the first collimating lens 120 and then emitted to the rear first steering unit 300, the collimated first guide laser 140 includes a first light region 141 and a second light region 142 in the fast axis direction, and the first light region 141 is located above the second light region 142; the second guiding chip 150 and the second VBG locker 170 form an external cavity resonance, so that the second guiding chip 150 is locked to emit two guiding laser beams 180 with a single wavelength, and the second guiding laser beams 180 are collimated by the third collimating lens 160 and then emitted to the first steering unit 300.
The first laser unit 200 includes a first laser chip 210 and a fifth collimating lens 720, and the first laser chip 210 is located at a vertical height lower than that of the first guide chip 110.
The first steering unit 300 includes a first reflecting mirror 310, a second reflecting mirror 320, and a first double-sided reflecting mirror 330, the first reflecting mirror 310 is disposed in the optical path direction of the collimated first guided laser light 140, the first double-sided reflecting mirror 330 includes a first reflecting surface 331 and a second reflecting surface 332, the first reflecting surface 331 is disposed in the reflecting optical path propagation direction of the first reflecting mirror 310, the second reflecting surface 332 is disposed in the propagation direction of the collimated second guided laser light 180, the second reflecting mirror 320 is disposed in the light emitting direction of the first laser chip 210, the top vertical height of the first reflecting mirror 310 is greater than the top vertical height of the first double-sided reflecting mirror 330, and the top vertical height of the first double-sided reflecting mirror 330 is greater than the top vertical height of the second reflecting mirror 320.
The first light region 141 is reflected by the first reflector 310, then emitted to the light path shaping module a from above the first double-sided reflector 330, focused and then enters the optical fiber C; the second light region 142 is reflected by the first reflector 310 and then emitted to the first reflection surface 331, and after being redirected again by the first reflection surface 331, the second light region 142 passes above the second reflector 320 and is emitted to the fifth collimating lens 720, due to the reversibility of light, the fifth collimating lens 720 of the second light region 142 redirected by the first reflection surface 331 focuses and emits to the light emitting surface of the first laser chip 210, the first laser chip 210 and the second light region 142 which emits to the first laser chip 210 with fixed wavelength form external cavity resonance, so that the first laser chip 210 emits the first lock laser light 211 with single wavelength, the wavelength of the first lock laser light 211 is equal to that of the first guide laser light 140, the first lock laser light emits to the second reflector 211, the first lock laser light 211 redirected by the second reflector 320 emits to the optical path shaping module a, and enters into the optical fiber C after being focused.
The second guiding laser 180 is emitted to the second reflecting surface 332, and the second guiding laser 180 which is deflected by the second reflecting surface 332 is emitted to the optical path shaping module a, focused and enters the optical fiber C.
The optical path structure of the optical path shaping module a has already been described in the first embodiment, and is not described herein again.
Example four
Referring to fig. 7-8, in the third embodiment, the wave-locking optical path of the semiconductor laser further includes a second wave-locking module D, and the second wave-locking module D includes a second wave-locking unit 600, a second laser unit 700, and a second steering unit 800.
Specifically, the second wave-locking unit 600 includes a third guiding chip 610, a fourth collimating lens 620 and a third VBG wave-locker 630, the vertical height of the step where the third guiding chip 610 is located is lower than the vertical height of the second guiding chip 150, the third guiding chip 610 and the third VBG wave-locker 630 form an external cavity resonance, so that the third guiding chip 610 is wave-locked to emit a third guiding laser 640 with a single wavelength, and the third guiding laser 640 is collimated by the fourth collimating lens 620 and then emitted to the second steering unit 800.
The second laser unit 700 includes a second laser chip 710 and a fifth collimating lens 720, and the second laser chip 710 is located at a vertical height lower than that of the second guide chip 150.
The second steering unit 800 includes a second double-sided mirror 810 and a fourth mirror 820, the second double-sided mirror 810 includes a third reflecting surface 811 and a fourth reflecting surface 812, the third reflecting surface 811 is located in the direction of the reflected light path of the second reflecting surface 332, the fourth reflecting surface 812 is located in the light-emitting direction of the collimated third guided laser light 640, the fourth mirror 820 is located in the light-emitting direction of the fifth collimating lens 720, the vertical height of the top surface of the second double-sided mirror 810 is smaller than that of the first double-sided mirror 330, and the vertical height of the top surface of the second double-sided mirror 810 is greater than that of the top surface of the fourth mirror 820.
The collimated second guide laser 180 comprises a third light area 181 and a fourth light area 182 in the fast axis direction, the third light area 181 is located above the fourth light area 182, the third light area 181 is reflected by a second reflecting surface 332, then emitted to the light path shaping module a from above the second double-sided reflector 810, and enters the optical fiber C after being focused; the fourth light region 182 is reflected by the second reflecting surface 332 and then emitted to the third reflecting surface 811, and after being deflected again by the third reflecting surface 811, the fourth light region 182 deflected by the third reflecting surface 811 is focused by the fourth collimating lens 620 and emitted to the light emitting surface of the second laser chip 710, due to the light reversibility, the second laser chip 710 and the fourth light region 182 which is emitted to the second laser chip with fixed wavelength form an external cavity resonance, so that the second laser chip 710 emits the second wave-locking laser 711 with a single wavelength, the wavelength of the second wave-locking laser 711 is equal to that of the second guide laser 180, the second wave-locking laser 711 is emitted to the fourth reflecting surface 820, and the second wave-locking laser 711 deflected by the fourth reflecting surface 820 is emitted to the optical path shaping module a and enters the optical fiber C after being focused.
It should be mentioned that, in this embodiment, only for the case that the wave-locking optical path includes two wave-locking modules, in order to increase the output power of the semiconductor laser, more wave-locking modules may be disposed on the wave-locking optical path, and the added wave-locking module has the same internal optical path structure as the second wave-locking module D, as long as it is ensured that the added wave-locking module and the adjacent last wave-locking module are in a stepped arrangement, and the vertical height of the top surface of the double-sided mirror in the same wave-locking module is greater than the vertical height of the top surface of the other mirror.
In the first to fourth embodiments, the focusing structure of the optical path shaping module a is not limited to the combination of the fast axis focusing lens 400 and the slow axis focusing lens 500, and for example, the following methods may be adopted:
(1) the off-axis parabolic reflector and the fast-axis focusing lens 400 are added, the off-axis parabolic reflector can not only turn to but also realize focusing in the slow-axis direction, and the combined mode can also realize focusing and coupling of laser emitted to the light path shaping module A in the fast-axis and slow-axis directions into the optical fiber C.
(2) The off-axis hyperbolic reflector is directly adopted, the off-axis hyperbolic reflector not only can be turned but also can realize focusing in the directions of a slow axis and a fast axis, and laser emitted to the light path shaping module A is directly focused and coupled in the directions of the fast axis and the slow axis to enter the optical fiber C.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (8)

1. A wave-locking optical path of a semiconductor laser is characterized by comprising an optical path shaping module and at least one wave-locking module, wherein the wave-locking module comprises a wave-locking unit, a laser unit and a steering unit;
the wave locking unit comprises a guide chip and a VBG wave locker, the guide chip emits guide laser, the guide laser after collimation emits to the VBG wave locker to complete wave locking, the guide laser after wave locking comprises a first light area and a second light area in the fast axis direction, the first light area emits to the light path shaping module after passing through the steering unit, and the second light area emits to the laser unit after passing through the steering unit;
the laser unit comprises a laser chip, and the height of the step where the laser chip is located is lower than that of the step where the guide chip is located;
the first light area enters the optical fiber after being focused by the light path shaping module;
the second light area induces the laser chip to emit wave locking laser with a single wavelength, the wave locking laser and the guide laser have the same wavelength, the wave locking laser irradiates the steering unit, the wave locking laser steered by the steering unit irradiates the light path shaping module, and the steered wave locking laser enters an optical fiber after being focused by the light path shaping module.
2. The wave-locking optical path of a semiconductor laser as claimed in claim 1 wherein the turning unit comprises a first mirror and a second mirror disposed opposite to each other;
the first light zone is located below the second light zone;
the vertical height of the top surface of the first reflector is not less than that of the top surface of the second reflector;
the first light area is emitted to the first reflector, and the first light area which is turned by the first reflector is emitted to the light path shaping module;
the second light area sequentially passes through the upper parts of the first reflector and the second reflector and is shot to the laser unit;
the laser chip emits wave-locking laser with fixed wavelength to the second reflector, and the wave-locking laser after being deflected by the second reflector is emitted to the light path shaping module.
3. The wave-locking optical path of a semiconductor laser as claimed in claim 1 wherein the steering unit comprises a first mirror, a second mirror and a third mirror;
the first light area is located above the second light area;
the first reflector is arranged in the light path direction of the guided laser, the second reflector is arranged in the light emergent direction of the laser unit, the third reflector is arranged in the light path reflecting direction of the first reflector, the third reflector is aligned with the second reflector, the vertical height of the top surface of the first reflector is greater than that of the top surface of the third reflector, and the vertical height of the top surface of the third reflector is greater than that of the top surface of the second reflector;
the first light zone turned by the first reflector passes through the upper part of the third reflector and is emitted to the light path shaping module;
the second light area deflected by the first reflecting mirror is emitted to the third reflecting mirror and deflected by the third reflecting mirror to be emitted to the laser unit from the upper part of the second reflecting mirror;
the laser chip emits wave-locking laser with fixed wavelength to the second reflector, and the wave-locking laser after being deflected by the second reflector is emitted to the light path shaping module.
4. A wave-locking optical path of a semiconductor laser as claimed in claim 3 wherein the wave-locking module comprises a first wave-locking module and a second wave-locking module, and the third mirror of the first wave-locking module is aligned with the first mirror of the second wave-locking module.
5. A wave-locking optical path of a semiconductor laser as claimed in claim 3 wherein the wave-locking module comprises a first wave-locking module and a second wave-locking module, and the third reflector in the first wave-locking module is staggered with the first reflector in the second wave-locking module.
6. A wave-locking optical path of a semiconductor laser is characterized by comprising an optical path shaping module and a first wave-locking module, wherein the first wave-locking module comprises a first wave-locking unit, a first laser unit and a first steering unit;
the first wave locking unit comprises a first guide chip and a second guide chip which are arranged in a stepped manner, the vertical height of a step where the first guide chip is located is larger than that of a step where the second guide chip is located, the first guide chip emits first guide laser with a single wavelength after being locked by a first VBG wave locker, the second guide chip emits second guide laser with a single wavelength after being locked by a second VBG wave locker, and the second guide laser after being collimated is emitted to the first steering unit;
the first laser unit comprises a first laser chip, and the vertical height of a step where the first laser chip is located is lower than that of a step where the first guide chip is located;
the first steering unit comprises a first reflector, a second reflector and a first double-sided reflector, the first reflector is arranged in the light emitting direction of the first guide laser, the first double-sided reflector comprises a first reflecting surface and a second reflecting surface, the first reflecting surface is positioned in the light path reflecting direction of the first reflector, the second reflecting surface is positioned in the light emitting direction of the second guide laser, the second reflector is arranged in the light emitting direction of the first laser unit, the vertical height of the top surface of the first reflector is greater than that of the top surface of the first double-sided reflector, and the vertical height of the top surface of the first double-sided reflector is greater than that of the top surface of the second reflector;
the first guided laser comprises a first light area and a second light area in the direction of a fast axis, and the first light area is positioned above the second light area;
the first light zone steered by the first reflector passes through the upper part of the first double-sided reflector and is emitted to the light path shaping module, and the first light zone is focused by the light path shaping module and then enters an optical fiber;
the second light area reflected by the first reflector is emitted to the first reflecting surface, is deflected by the first reflecting surface, passes through the upper part of the second reflector and is emitted to the first laser unit;
the first laser chip emits first wave-locking laser with fixed wavelength, the first wave-locking laser irradiates the second reflector, is deflected by the second reflector, irradiates the light path shaping module, is focused by the light path shaping module and enters an optical fiber;
the second guide laser is emitted to the second reflecting surface, is emitted to the light path shaping module after being turned by the second reflecting surface, and enters the optical fiber after being focused by the light path shaping module.
7. The wave-locking optical path of a semiconductor laser as claimed in claim 6, characterized by comprising a second wave-locking module, wherein the second wave-locking module comprises a second wave-locking unit, a second laser unit and a second steering unit;
the second wave locking unit comprises a third guide chip, the third guide chip emits third guide laser with a single wavelength after being locked by a third VBG wave locker, and the collimated third guide laser emits to the second steering unit;
the second laser unit comprises a second laser chip, and the vertical height of the step where the second laser chip is located is smaller than that of the step where the second guide chip is located;
the second steering unit comprises a second double-sided reflector and a fourth reflector, the second double-sided reflector comprises a third reflecting surface and a fourth reflecting surface, the third reflecting surface is positioned in the direction of a reflecting light path of the second reflecting surface, the fourth reflecting surface is positioned in the light emitting direction of the third guided laser, the fourth reflector is arranged in the light emitting direction of the second laser unit, the vertical height of the top surface of the second double-sided reflector is smaller than that of the top surface of the first double-sided reflector, and the vertical height of the top surface of the second double-sided reflector is larger than that of the top surface of the fourth reflector;
the second guided laser comprises a third light region and a fourth light region in the direction of a fast axis, and the third light region is positioned above the fourth light region;
the third light area which is turned by the second reflecting surface passes through the upper part of the second double-sided reflecting mirror and is emitted to the light path shaping module, and the third light area enters an optical fiber after being focused by the light path shaping module;
the fourth light zone turned by the second reflecting surface is emitted to the third reflecting surface, the fourth light zone turned by the third reflecting surface passes through the upper part of the fourth reflecting mirror and is emitted to the second laser unit, so that the second laser chip emits second wave-locking laser with single wavelength, the wavelength of the second wave-locking laser is the same as that of the second guided laser, and the second wave-locking laser is turned by the fourth reflecting mirror, emitted to the light path shaping module, focused and coupled by the light path shaping module and enters an optical fiber;
and the third guide laser is directed to the light path shaping module after being deflected by the fourth reflecting surface, and enters an optical fiber after being focused by the light path shaping module.
8. The wave-locking optical path of a semiconductor laser as claimed in any one of claims 1 to 7 wherein the optical path shaping module comprises a fast axis focusing lens and a slow axis focusing lens, and the laser emitted to the optical path shaping module passes through the fast axis focusing lens and the slow axis focusing lens in sequence and then is focused into the optical fiber.
CN202210170743.8A 2022-02-24 2022-02-24 Wave-locking optical path of semiconductor laser Active CN114243453B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114185A (en) * 2009-11-27 2011-06-09 Seiko Epson Corp Laser light source device, method for manufacturing laser light source device, projector, and monitoring device
CN105449524A (en) * 2015-12-21 2016-03-30 长春理工大学 Multiple pairs of single-tube beam-combining semiconductor laser devices of sharing multiple groups of beam splitters in plane configuration
CN106410608A (en) * 2016-11-18 2017-02-15 上海高意激光技术有限公司 Laser array and laser beam combining device
JP2021034531A (en) * 2019-08-23 2021-03-01 株式会社フジクラ Laser module and fiber laser device
CN112652950A (en) * 2020-11-26 2021-04-13 苏州长光华芯光电技术股份有限公司 Wavelength locking semiconductor laser system
US20210305780A1 (en) * 2020-03-25 2021-09-30 Mieng Pai High-power high-beam-quality laser diode systems using coupled large laser cores

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114185A (en) * 2009-11-27 2011-06-09 Seiko Epson Corp Laser light source device, method for manufacturing laser light source device, projector, and monitoring device
CN105449524A (en) * 2015-12-21 2016-03-30 长春理工大学 Multiple pairs of single-tube beam-combining semiconductor laser devices of sharing multiple groups of beam splitters in plane configuration
CN106410608A (en) * 2016-11-18 2017-02-15 上海高意激光技术有限公司 Laser array and laser beam combining device
JP2021034531A (en) * 2019-08-23 2021-03-01 株式会社フジクラ Laser module and fiber laser device
US20210305780A1 (en) * 2020-03-25 2021-09-30 Mieng Pai High-power high-beam-quality laser diode systems using coupled large laser cores
CN112652950A (en) * 2020-11-26 2021-04-13 苏州长光华芯光电技术股份有限公司 Wavelength locking semiconductor laser system

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