CN114242835A - Method for thinning silicon-based photosensitive chip - Google Patents
Method for thinning silicon-based photosensitive chip Download PDFInfo
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- CN114242835A CN114242835A CN202111491478.5A CN202111491478A CN114242835A CN 114242835 A CN114242835 A CN 114242835A CN 202111491478 A CN202111491478 A CN 202111491478A CN 114242835 A CN114242835 A CN 114242835A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 117
- 239000010703 silicon Substances 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000012188 paraffin wax Substances 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000012634 fragment Substances 0.000 abstract description 4
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for thinning a silicon-based photosensitive chip, which comprises the following steps: evaporating aluminum on the back of the silicon chip, photoetching a mask, corroding aluminum phosphate, locally etching and thinning, performing subsequent processes and scribing and separating the silicon chip to obtain the photosensitive chip. The method is different from the traditional method for thinning a single photosensitive chip at a chip level, and adopts a mode of combining front protection and back local thinning for the silicon chip at a wafer level, thereby not only ensuring the thinning process of the silicon-based photosensitive chip, but also ensuring the mechanical strength of the local thinned silicon chip and supporting the subsequent processing process. The method simplifies the subsequent process flow of chip-level thinning, reduces the fragment rate of the photosensitive chip in the process of manufacturing, improves the yield of chip preparation, and reduces the process cost.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a method for thinning a silicon-based photosensitive chip.
Background
The photosensitive chip is a core component of a photoelectric detector, and mainly has the main functions of detecting and receiving a laser echo signal returned after a laser irradiates a target to be detected or a specific area, converting the detected optical signal into an electric signal through photon absorption and photoelectric conversion, and then obtaining various target characteristic information such as the direction, distance, speed, displacement, vibration, shape, morphology, material and the like of the target to be detected or the specific area and physical and chemical characteristics and changes, and is widely applied to the fields of military affairs and national economy such as ray measurement and detection, automatic process control, photometric measurement, missile guidance, infrared thermal imaging, infrared remote sensing and the like.
Due to the advantages of low cost, mature semiconductor manufacturing process, fit with CMOS process and the like, the silicon-based photosensitive chip enables the photoelectric detector of the silicon material to become the mainstream in the fields of visible light and near infrared light. With the rapid development of the field of photoelectric detection, higher requirements are put forward on various photoelectric parameters such as working voltage, responsivity and response time of a photoelectric detection device, and accordingly, for the design of a silicon-based photosensitive chip, an ultrathin photosensitive chip (the thickness of which is less than 150 μm) is required.
Disclosure of Invention
Objects of the invention
The purpose of the invention is: the method for thinning the silicon-based photosensitive chip is used for solving the problems that the existing silicon-based ultrathin photosensitive chip is high in fragment rate and not easy to produce in quantity in the preparation process.
(II) technical scheme
In order to solve the technical problem, the invention provides a method for thinning a silicon-based photosensitive chip, which comprises the following steps:
s1, evaporating an aluminum film on the back of the silicon wafer;
s2, forming a mask pattern of a photoresist layer on the back of the silicon wafer by photoetching;
s3, etching the aluminum layer outside the mask pattern by phosphoric acid to expose the local area to be thinned;
s4, locally thinning the exposed area on the back of the silicon wafer by adopting an etching process;
s5, carrying out subsequent processing on the thinned silicon wafer;
and S6, scribing and separating the silicon wafer to obtain the ultrathin (60-150 mu m) photosensitive chip.
Further, in step S1, the evaporated aluminum film layer is a mask layer in the thinning process;
further, in step S2, forming a mask pattern to be used for removing the photoresist layer in the photosensitive chip region by photolithography;
further, in the step S3, etching the exposed aluminum film with phosphoric acid, and cleaning away the residual photoresist to form a silicon wafer using the aluminum film as a mask material;
further, in the step S3, the local area to be thinned is the area where the photosensitive chip is located;
further, in the step S4, the etching process is wet etching, and the etching solution is a mixed solution of nitric acid, hydrofluoric acid, and acetic acid;
further, in the step S4, the front process layer of the photo chip needs to be protected in the etching process, and the protection method is that the front surface and the edge of the silicon chip are wrapped by paraffin wax and fixed on the carrier substrate in a direction that the front surface faces downward, so as to ensure that the front process layer and the side surface of the silicon chip are not corroded in the etching process;
further, in the step S5, the subsequent processes include back doping layer preparation, electrode preparation, and surface passivation, and the subsequent processes are used for completing chip structure processing of photon absorption and photoelectric conversion of the photosensitive chip;
further, in step S6, a dicing saw is used to dice and separate the silicon wafer, so as to obtain the ultra-thin silicon-based photosensitive chip.
(III) advantageous effects
The method for thinning the silicon-based photosensitive chip provided by the technical scheme is different from the traditional method for thinning a single photosensitive chip at a chip level, but the photosensitive chip is locally thinned at a silicon wafer level, and the thinned silicon wafer still has good mechanical strength and can support subsequent process machining; the whole process flow is carried out at the silicon wafer level, so that the thinning operation at the photosensitive chip level is avoided, the preparation efficiency and the yield of the ultrathin photosensitive chip are greatly improved, and the mass production of the ultrathin photosensitive chip can be realized.
Drawings
FIG. 1 is a flow chart of a method for thinning a silicon-based photosensitive chip in an embodiment of the present invention;
fig. 2 is a schematic diagram of an aluminum film evaporation process in the present embodiment example;
FIG. 3 is a schematic view of a photomask process in this example of implementation;
FIG. 4 is a schematic diagram of an aluminum phosphate etching process in the present example;
FIG. 5 is a schematic view of a back side etching process in the present embodiment;
FIG. 6 is a schematic view showing a process performed subsequently to the silicon wafer in this embodiment example;
fig. 7 is a schematic diagram of a silicon wafer dicing to obtain an ultra-thin photosensitive chip in this embodiment example.
Detailed Description
In order to make the objects, contents and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
The conventional method for thinning the photosensitive chip is mainly used for thinning a single photosensitive chip, and a conventional physical thinning mode, namely a mode of using a polishing machine or a thinning machine, is limited by equipment conditions, generally thins the single photosensitive chip to 200 mu m at most, and has risks of fragments and the like. In addition, the thinned photosensitive chip also needs to be subjected to related process flows such as chemical corrosion thinning, back doping layer preparation, electrode manufacturing, surface passivation and the like. For the processing of a single photosensitive chip, the process operation difficulty is high, the labor cost is high, the processing mechanical strength of the thinned photosensitive chip is weak, the fragment rate in the process is high, the preparation efficiency and the yield of the ultrathin photosensitive chip are seriously influenced, and the mass production of the ultrathin photosensitive chip cannot be realized. The invention optimizes the thinning process of the silicon-based ultrathin photosensitive chip and greatly improves the preparation efficiency and the yield of the ultrathin photosensitive chip.
Referring to fig. 1, the present invention is implemented by the following steps:
step one, evaporating and plating an aluminum film on the back of a silicon wafer
The specific process is as follows: firstly, ultrasonically cleaning a silicon wafer for 10 minutes by using acetone, alcohol and deionized water in sequence, and placing the silicon wafer in a drying box for drying; putting the silicon wafer into an evaporation coating machine, bombarding the back surface of the silicon wafer with oxygen for 3-5 minutes, and then evaporating a layer of aluminum film with the thickness of 1.5-2.5 microns on the back surface of the silicon wafer, as shown in figure 1. The aluminum film is used as a mask material during subsequent etching.
Step two, forming a mask pattern of the photoresist layer by adopting a photoetching process
The specific process is as follows: uniformly coating photoresist on the back of the silicon wafer through a spin coater, and baking the photoresist for 1 hour at 80-90 ℃; then, photoetching exposure is carried out by adopting a photoetching plate, and a photoetching area designed by the photoetching plate is a photosensitive chip area; developing and rinsing the exposed photoresist, removing the exposed photoresist, placing the silicon wafer into an oven for baking and shaping, and finally forming a mask pattern with the photoresist layer as shown in fig. 3.
Etching the aluminum layer outside the mask pattern by using phosphoric acid to expose the local area to be thinned
The specific process is as follows: putting the silicon chip obtained in the previous step into a phosphoric acid solution for corrosion, wherein the corrosion temperature is 80-90 ℃, and the corrosion depth is the thickness of an aluminum film; taking out the silicon wafer when the back surface is corroded to the silicon layer, wherein the corroded silicon wafer is shown in figure 4; washing residual phosphoric acid solution on the surface of the silicon wafer by using deionized water, and then soaking the silicon wafer in acetone to remove residual photoresist; and finally, cleaning the silicon wafer by using alcohol and deionized water to obtain the silicon wafer to be thinned, wherein the back surface of the silicon wafer takes aluminum as a mask.
Step four, locally thinning the exposed area on the back of the silicon chip by adopting an etching process
The specific process is as follows: melting paraffin into liquid, and uniformly coating on carrier baseThe front side of the silicon wafer is downwards tightly attached to paraffin, the silicon wafer is fixed on a carrier substrate, and then the paraffin is coated on the edge of the silicon wafer; as shown in fig. 5, paraffin completely wraps the front side and the edge of the silicon wafer, and serves to protect the front side doping layer and the silicon side wall of the prepared photosensitive chip on the silicon wafer from being corroded in the etching process; thinning the exposed area of the aluminum mask on the back of the silicon chip by adopting a wet etching process, wherein the covered area does not need to be thinned; putting a carrier for fixing a silicon wafer into corrosive liquid for local etching and thinning, wherein the corrosive liquid is nitric acid HNO with the volume of 8-1231-2 volume hydrofluoric acid HF and 2-4 volume fraction acetic acid CH3The optional depth range of the COOH mixed solution for corroding the deep groove is 30-120 mu m; after the corrosion is finished, taking the carrier out of the corrosive liquid, cleaning the carrier by using deionized water, and heating the carrier to take down the silicon wafer; finally, sequentially cleaning the silicon wafer by using acetone, alcohol and deionized water to ensure that the corrosive liquid and the paraffin are completely cleaned, and obtaining a locally thinned silicon wafer;
step five, carrying out subsequent process processing on the thinned silicon wafer
The specific process is as follows: as shown in fig. 6, the fabrication of the back doping layer, the photo chip electrode, and the passivation layer is part of the subsequent processes. The back doping layer can be prepared by ion implantation doping on the back of the locally thinned silicon wafer; preparing electrodes of a photosensitive chip on the front side and the back side of the silicon wafer respectively; and finally, passivating the front surface of the silicon wafer by adopting a silicon nitride or polyimide material, preparing a passivation layer and other subsequent processes.
Step six, scribing and separating the silicon chip to obtain the ultrathin photosensitive chip
The specific process is as follows: as shown in FIG. 7, a dicing saw can be used for dicing and separating the photosensitive chip from the silicon wafer, the distance between the dicing line and the edge of the etched deep groove is 30-60 μm, and the influence of wet etching on the flatness of the photosensitive chip due to side etching can be reduced. And finally, obtaining the ultrathin silicon-based photosensitive chip.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for thinning a silicon-based photosensitive chip is characterized by comprising the following steps:
s1, evaporating an aluminum film on the back of the silicon wafer;
s2, forming a mask pattern of a photoresist layer on the back of the silicon wafer by photoetching;
s3, etching the aluminum layer outside the mask pattern by phosphoric acid to expose the local area to be thinned;
s4, locally thinning the exposed area on the back of the silicon wafer by adopting an etching process;
s5, carrying out subsequent processing on the thinned silicon wafer;
and S6, scribing and separating the silicon wafer to obtain the ultrathin photosensitive chip.
2. The method for thinning the silicon-based photosensitive chip according to claim 1, wherein in the step S1, the process of vapor plating the aluminum film on the back surface of the silicon wafer comprises: firstly, ultrasonically cleaning a silicon wafer for 10 minutes by using acetone, alcohol and deionized water in sequence, and placing the silicon wafer in a drying box for drying; putting the silicon wafer into an evaporation coating machine, bombarding the back surface of the silicon wafer with oxygen for 3-5 minutes, and evaporating a layer of aluminum film with the thickness of 1.5-2.5 microns on the back surface of the silicon wafer.
3. The method for silicon-based photosensitive chip thinning according to claim 2, wherein in step S2, the photoresist mask layer is formed by: uniformly coating photoresist on the back of the silicon wafer through a spin coater, and baking the photoresist for 1 hour at 80-90 ℃; then, photoetching exposure is carried out by adopting a photoetching plate, and a photoetching area designed by the photoetching plate is a photosensitive chip area; and developing and rinsing the exposed photoresist, removing the exposed photoresist, putting the silicon wafer into an oven for baking and shaping, and finally forming a mask pattern of the photoresist layer on the silicon wafer.
4. The method for silicon-based photosensitive chip thinning according to claim 3, wherein in step S3, the process of exposing the thinning local area is as follows: putting the silicon wafer obtained in the step S2 into a phosphoric acid solution for corrosion, wherein the corrosion temperature is 80-90 ℃, and the corrosion depth is the thickness of an aluminum film; taking out the silicon wafer when the back side is corroded to the silicon layer; washing residual phosphoric acid solution on the surface of the silicon wafer by using deionized water, and then soaking the silicon wafer in acetone to remove residual photoresist; and finally, cleaning the silicon wafer by using alcohol and deionized water to obtain the silicon wafer to be thinned, wherein the back surface of the silicon wafer takes aluminum as a mask.
5. The method for thinning the silicon-based photosensitive chip according to claim 4, wherein in the step S4, the etching process is wet etching, and the etching solution is a mixed solution of nitric acid, hydrofluoric acid and acetic acid.
6. The method for thinning the silicon-based photosensitive chip according to claim 5, wherein in the step S4, the front process layer of the photosensitive chip is protected during etching in a manner that: and the front surface and the edge of the silicon wafer are wrapped by paraffin in the direction that the front surface faces downwards and are fixed on a carrier substrate, so that a process layer on the front surface of the silicon wafer and the side surface of the silicon wafer are prevented from being corroded in an etching process.
7. The method for silicon-based photosensitive chip thinning according to claim 6, wherein in step S4, the etching process comprises: melting paraffin into liquid, uniformly coating the liquid on the surface of a carrier substrate, tightly attaching the front side of a silicon wafer to the paraffin downwards, fixing the silicon wafer on the carrier substrate, and coating the paraffin to the edge of the silicon wafer; the paraffin completely wraps the front side and the edge of the silicon wafer; thinning the exposed area of the aluminum mask on the back of the silicon chip by adopting a wet etching process, wherein the covered area does not need to be thinned; placing a carrier for fixing the silicon wafer into a corrosive liquid for local etching and thinning, wherein the depth range of a corrosion deep groove is 30-120 mu m; after the corrosion is finished, taking the carrier out of the corrosive liquid, cleaning the carrier by using deionized water, and heating the carrier to take down the silicon wafer; and finally, sequentially cleaning the silicon wafer by using acetone, alcohol and deionized water to ensure that the corrosive liquid and the paraffin are completely cleaned, thereby obtaining the locally thinned silicon wafer.
8. The method for thinning the silicon-based photosensitive chip according to claim 7, wherein in the step S4, the etching solution is 8-12 parts by volume of nitric acid HNO31-2 parts by volume of hydrofluoric acid HF and 2-4 parts by volume of acetic acid CH3A mixture of COOH.
9. The method for silicon-based photosensitive chip thinning according to claim 8, wherein in step S5, the subsequent processing comprises preparing a back doping layer, a photosensitive chip electrode, and a passivation layer, and performing ion implantation doping on the back of the partially thinned silicon wafer to prepare the back doping layer; preparing electrodes of the photosensitive chip on the front side and the back side of the silicon wafer respectively; and finally, passivating the front surface of the silicon wafer by adopting a silicon nitride or polyimide material to prepare a passivation layer.
10. The method for thinning the silicon-based photosensitive chip according to claim 9, wherein in step S6, a dicing saw is used to scribe and separate the photosensitive chip from the silicon wafer, the scribe line is 30-60 μm away from the edge of the etched deep groove, so as to reduce the influence of wet etching on the flatness of the photosensitive chip due to side etching, and obtain an ultrathin silicon-based photosensitive chip of 60-150 μm.
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| CN113299538A (en) * | 2021-04-22 | 2021-08-24 | 重庆工程职业技术学院 | Method for thinning chip |
-
2021
- 2021-12-08 CN CN202111491478.5A patent/CN114242835A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1949477A (en) * | 2006-11-10 | 2007-04-18 | 北京大学 | Body silicon MEMS and CMOS circuit integrating method capable of removing residual silicon |
| CN101276740A (en) * | 2007-03-30 | 2008-10-01 | 万国半导体股份有限公司 | Method of forming ultra thin chips of power devices |
| CN102403217A (en) * | 2011-11-11 | 2012-04-04 | 华中科技大学 | Preparation method for ultrathin chip |
| CN110690322A (en) * | 2019-09-30 | 2020-01-14 | 南开大学 | Preparation method of self-supporting high-gain flexible silicon-based photoelectric detector |
| CN111206245A (en) * | 2020-02-17 | 2020-05-29 | 江苏友润微电子有限公司 | Preparation method of nickel-chromium-aluminum electrode pattern for flexible humidity sensor |
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