CN114242709A - Light-emitting diode (LED) -integrated light-enhanced silicon carbide power device - Google Patents
Light-emitting diode (LED) -integrated light-enhanced silicon carbide power device Download PDFInfo
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- CN114242709A CN114242709A CN202111437948.XA CN202111437948A CN114242709A CN 114242709 A CN114242709 A CN 114242709A CN 202111437948 A CN202111437948 A CN 202111437948A CN 114242709 A CN114242709 A CN 114242709A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 47
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
A light-enhanced silicon carbide power device integrated with an LED relates to a silicon carbide power semiconductor. The cell structure is formed by connecting a plurality of cells in parallel, and each cell structure comprises: the P-type doped collector region, the N-type doped field termination layer positioned above the P-type doped collector region, the N-type doped drift region positioned above the N-type doped field termination layer, the P-type doped well region positioned above the N-type drift region, the N-type doped source region and the P-type doped base region positioned inside the P-type doped well region, the oxide layer positioned above the N-type drift region and the P-type doped well region, and the gate electrode positioned above the oxide layer; the integrated LED is positioned above the JFET area and in the gate electrode; the emitter electrode is positioned above the N-type doped source region and the P-type doped base region; the collector is located below the P-type doped collector region. And the LED is integrated on the top grid, and the light emitted by the LED is utilized to enable the JFET area to generate electron-hole pairs, so that the resistivity of the JFET area and the drift area is reduced.
Description
Technical Field
The invention belongs to the field of silicon carbide power semiconductors, and particularly relates to a light-enhanced silicon carbide power device integrated with an LED.
Background
Silicon carbide (SiC) has excellent physical and electrical properties as an emerging third generation semiconductor material. The method has wide application prospect in the fields of electric vehicles, rail transit, smart grids, green energy and the like.
The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has a simple driving circuit and a high switching speed, and has wide application potential in the scene of less than ten thousand volts. The Insulated Gate Bipolar Transistor (IGBT) has the advantages of simple MOSFET drive circuit, high switching speed and low conduction resistance of Bipolar Junction Transistor (BJT) conductance modulation, and has wide application prospect in the field of power electronics.
However, due to the characteristics of the silicon carbide material, the forbidden band is wide, and carriers generated by intrinsic excitation are few, so that compared with the silicon material IGBT, the carrier concentration generated by conductance modulation of the silicon carbide IGBT is small, and the conduction of the device is not facilitated. For the silicon carbide MOSFET, since the resistance is linear, the silicon carbide MOSFET cannot generate a conductance modulation effect, and thus the silicon carbide MOSFET has a large resistance in a high-voltage application environment.
By using a proper light source, electron-hole pairs are generated in the silicon carbide body, so that the conductivity modulation effect of the silicon carbide device can be enhanced, and the conduction characteristic of the device can be enhanced. If the auxiliary light source is used for regulating and controlling the conduction of the silicon carbide device, an additional circuit is needed, and the complexity of a device driving circuit is increased.
Disclosure of Invention
The invention aims to provide the light-enhanced silicon carbide power device integrating the LED, which combines the characteristics of the silicon carbide material, improves the conduction characteristic of the silicon carbide power device, integrates the LED into the corresponding power device and improves the integration level of the device.
The invention is formed by connecting a plurality of cells in parallel, and each cell structure comprises: the LED comprises a P-type doped collector region, an N-type doped field stop layer, an N-type doped drift region, a P-type doped well region, an N-type doped source region, a P-type doped base region, an oxide layer, a grid electrode, an integrated LED, an emitter electrode and a collector electrode; the N-type doped field stop layer is positioned above the P-type doped collector region, and the N-type doped drift region is positioned above the N-type doped field stop layer; the P-type doped well region is positioned above the N-type drift region; the N-type doped source region and the P-type doped base region are positioned inside the P-type doped well region; the oxide layer is positioned above the N-type doped drift region; the grid electrode is positioned above the oxide layer; the integrated LED is positioned above the JFET area and in the gate electrode; the emitter electrode is positioned above the N-type doped source region and the P-type doped base region; the collector is located below the P-type doped collector region.
Preferably, the doping concentration of the P-type doped collector region is 1 × 1018cm-3～5×1020cm-3The thickness is 0.1-20 μm, and the doping concentration of the N-type doped field stop layer is 1 × 1014cm-3～5×1020cm-3The thickness is 0.1 to 10 μm. The doping concentration of the N-type doped drift region is 1 multiplied by 1013cm-3～1×1018cm-3The thickness is set to 5 to 200 μm according to the required blocking voltage.
Preferably, the doping concentration of the P-type doped well region is 1 × 1015cm-3～5×1019cm-3. The depth of the N-type doped source region is 0.2-0.8 μm, and the doping concentration of the N-type doped source region is 1 × 1017cm-3The above; the depth of the P-type doped base region is 0.2-1.5 mu m, and the doping concentration of the P-type doped base region is 1 multiplied by 1017cm-3The above.
Preferably, the light emitted by the integrated LED is in the ultraviolet band.
Preferably, the width of the integrated LED is 0.5-20 μm, and the length of the integrated LED is 0.5-20 μm.
Preferably, the number of the LEDs integrated in each unit cell is 1-5000.
Preferably, the integrated LED can be any shape such as a circle, a square, a triangle, etc.
Compared with the conventional silicon carbide power device, the invention has the following advantages:
1. the silicon carbide semiconductor device can be applied to the field of high voltage of more than 600V, and the preparation process of the device is compatible with the existing silicon carbide device process.
2. According to the invention, the LED is integrated above the oxide layer of the JFET area, and the ultraviolet wave band emitted by the LED can enable the silicon carbide material to generate electron-hole pairs, so that the conductivity modulation effect is increased, and the on-resistance of the device can be effectively reduced.
3. According to the invention, the LED is integrated above the cell of the device, so that the integration level of the device is increased.
Drawings
Fig. 1 is a structural diagram of a light-enhanced silicon carbide power device according to the present invention.
Fig. 2 is a top view of a light-enhanced silicon carbide power device according to the present invention.
Fig. 3 is a graph comparing the turn-on characteristics of the silicon carbide IGBT of the present invention with that of the conventional silicon carbide IGBT at a gate voltage of 20V.
Fig. 4 is a current density profile of a JFET region for a silicon carbide IGBT at the same gate and collector voltages. Wherein, (a) is the silicon carbide IGBT of the invention, and (b) is the traditional silicon carbide IGBT.
Detailed Description
In order to improve the conduction characteristic of a silicon carbide power device, the invention provides a light-enhanced silicon carbide power device integrating an LED. The device provided by the invention has good conduction and blocking characteristics.
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The embodiment of the invention provides an LED-integrated light-enhanced silicon carbide IGBT which is formed by connecting a plurality of cells in parallel, and FIG. 1 is a schematic diagram of a cell structure of the embodiment of the invention. As shown in fig. 1, the cell structure includes a P-type doped collector region 1, an N-type doped field stop layer 2 located above the P-type doped collector region 1, and an N-type doped drift region 3 located above the N-type doped field stop layer 2. The P-type doped well region 4 is located above the N-type drift region 3. An N-doped source region 5 is located inside the P-doped well region 4. The P-doped base region 6 is located inside the P-doped well region 4. An oxide layer 7 is located above the drift region 4. A gate electrode 8 is located above the oxide layer 7. The integrated LED9 is located above the JFET region, inside the gate electrode 8. The emitter electrode 10 is located above the N-doped source region 5 and the P-doped base region 6. The collector 11 is located below the P-doped collector region 1.
The doping concentration of the P-type doped collector region 1 of the embodiment of the invention is 1 multiplied by 1018cm-3～5×1020cm-3The thickness is 0.1-20 μm, and the doping concentration of the N-type doped field stop layer 2 (buffer layer) is 1 × 1014cm-3～5×1020cm-3The thickness is 0.1 to 10 μm. The doping concentration of the N-type doped drift region 3 is 1 multiplied by 1013cm-3～1×1018cm-3The thickness is set to 5 to 200 μm according to the required blocking voltage.
The doping concentration of the P-type doped well region 4 of the embodiment of the invention is 1 × 1015cm-3～5×1019cm-3. The depth of the N-type doped source region 5 is 0.2-0.8 μm, and the doping concentration of the N-type doped source region 5 is 1 × 1017cm-3The above. The depth of the P-type doped base region 6 is 0.2-1.5 mu m, and the doping concentration of the P-type doped base region 6 is 1 multiplied by 1017cm-3The above.
The light wave band emitted by the integrated LED is an ultraviolet wave band.
In the embodiment of the invention, the effect of an integrated LED emission light source is achieved by adding the incidence of ultraviolet light above the JFET area of the device.
In the embodiment of the invention, the width of the integrated LED is 0.5-20 μm, and the length of the integrated LED is 0.5-20 μm.
In the embodiment of the invention, the number of the LEDs integrated in each unit cell is 1 to 5000.
Fig. 2 gives a top view of an embodiment of the invention. As shown in fig. 2, each unit cell may integrate a plurality of LEDs, and the LEDs are located inside the gate.
Fig. 3 is a graph showing a comparison of the turn-on characteristics of the silicon carbide IGBT of the present invention and the conventional silicon carbide IGBT at a gate voltage of 20V. It can be seen that the slope of the curve of the device in the embodiment is obviously greater than that of the traditional SiC IGBT, and the device in the embodiment has better conduction characteristics because the ultraviolet rays emitted by the LED are excited in the JFET region and the drift region of the device in the embodiment to generate a large number of electron-hole pairs, thereby effectively reducing the conduction resistance of the JFET region and the drift region of the device in the embodiment.
Fig. 4 shows the current density distribution of JFET regions for the silicon carbide igbts (a) of the present invention and for the conventional silicon carbide igbts (b) at the same gate and collector voltages. It can be seen that the current density of the example device in the JFET region is greater than that of the conventional SiC IGBT structure because the LED-integrated IGBT generates a large number of electron-hole pairs by absorbing light in the ultraviolet band emitted by the LED.
The above embodiments are further described in detail to illustrate the objects, technical solutions and advantages of the present invention, and it should be understood that the above embodiments are only examples of the present invention, and are not intended to limit the present invention, which is not limited to IGBTs, but also applicable to other silicon carbide power devices, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An LED-integrated light-enhanced silicon carbide power device is characterized by being formed by connecting a plurality of unit cells in parallel, wherein each unit cell structure comprises: the LED comprises a P-type doped collector region, an N-type doped field stop layer, an N-type doped drift region, a P-type doped well region, an N-type doped source region, a P-type doped base region, an oxide layer, a grid electrode, an integrated LED, an emitter electrode and a collector electrode; the N-type doped field stop layer is positioned above the P-type doped collector region, and the N-type doped drift region is positioned above the N-type doped field stop layer; the P-type doped well region is positioned above the N-type drift region; the N-type doped source region and the P-type doped base region are positioned inside the P-type doped well region; the oxide layer is positioned above the N-type doped drift region; the grid electrode is positioned above the oxide layer; the integrated LED is positioned above the JFET area and in the gate electrode; the emitter electrode is positioned above the N-type doped source region and the P-type doped base region; the collector is located below the P-type doped collector region.
2. The LED integrated photoreinforced silicon carbide power device of claim 1, wherein the P-type doped collector region has a doping concentration of 1 x 1018cm-3～5×1020cm-3The thickness is 0.1-20 μm, and the doping concentration of the N-type doped field stop layer is 1 × 1014cm-3～5×1020cm-3The thickness is 0.1 to 10 μm.
3. The LED integrated optically enhanced silicon carbide power device of claim 1 wherein said N-doped drift region is doped at a concentration of 1 x 1013cm-3～1×1018cm-3The thickness is set to 5 to 200 μm according to the required blocking voltage.
4. The LED integrated photo-enhanced silicon carbide power device of claim 1, wherein said P-type doped well region has a doping concentration of 1 x 1015cm-3～5×1019cm-3。
5. The LED-integrated, photo-enhanced silicon carbide power device as claimed in claim 1, wherein the depth of said N-type doped source region is 0.2-0.8 μm, and the doping concentration of said N-type doped source region is 1 x 1017cm-3The above.
6. The LED-integrated photo-enhanced silicon carbide power device as claimed in claim 1, wherein the depth of the P-type doped base region is 0.2-1.5 μm, and the doping concentration of the P-type doped base region is 1 x 1017cm-3The above.
7. The LED-integrated, optically enhanced, silicon carbide power device of claim 1, wherein the number of LEDs integrated per cell is 1-5000.
8. The LED integrated light-activated silicon carbide power device as claimed in claim 1, wherein the wavelength band of the light emitted from the LED integrated with each cell is ultraviolet.
9. The LED-integrated, optically enhanced silicon carbide power device of claim 1, wherein each cell integrates an LED having a width of 0.5-20 μm and a length of 0.5-20 μm.
10. The LED-integrated, light-enhanced silicon carbide power device of claim 1, wherein each cell integrates LEDs having a circular, square, or triangular shape.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111437948.XA CN114242709A (en) | 2021-11-30 | 2021-11-30 | Light-emitting diode (LED) -integrated light-enhanced silicon carbide power device |
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| CN202111437948.XA CN114242709A (en) | 2021-11-30 | 2021-11-30 | Light-emitting diode (LED) -integrated light-enhanced silicon carbide power device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100301335A1 (en) * | 2009-06-02 | 2010-12-02 | Sei-Hyung Ryu | High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter |
| CN104064529A (en) * | 2013-03-22 | 2014-09-24 | 英飞凌科技股份有限公司 | Semiconductor component, semiconductor module and methods for producing a semiconductor component and a semiconductor module |
| CN104241348A (en) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | Low-on-resistance SiC IGBT and manufacturing method thereof |
| CN112466954A (en) * | 2020-11-30 | 2021-03-09 | 长江存储科技有限责任公司 | Semiconductor device and manufacturing method thereof |
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- 2021-11-30 CN CN202111437948.XA patent/CN114242709A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100301335A1 (en) * | 2009-06-02 | 2010-12-02 | Sei-Hyung Ryu | High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter |
| CN104064529A (en) * | 2013-03-22 | 2014-09-24 | 英飞凌科技股份有限公司 | Semiconductor component, semiconductor module and methods for producing a semiconductor component and a semiconductor module |
| CN104241348A (en) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | Low-on-resistance SiC IGBT and manufacturing method thereof |
| CN112466954A (en) * | 2020-11-30 | 2021-03-09 | 长江存储科技有限责任公司 | Semiconductor device and manufacturing method thereof |
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