CN114221134A - Super-surface stealth device of multi-layer frame structure based on achromatism - Google Patents
Super-surface stealth device of multi-layer frame structure based on achromatism Download PDFInfo
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- CN114221134A CN114221134A CN202111550465.0A CN202111550465A CN114221134A CN 114221134 A CN114221134 A CN 114221134A CN 202111550465 A CN202111550465 A CN 202111550465A CN 114221134 A CN114221134 A CN 114221134A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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Abstract
The invention discloses a super-surface stealth device based on an achromatic multilayer frame structure, which comprises a frame area and a stealth area, wherein the frame area is a frame; the frame area is a diamond frame; the hidden layer of the hidden area is respectively a layer I, a layer II and a layer III super surface from bottom to top, the hidden layer is vertical to the bottom surface of the rhombic frame, and the layer I super surface is cut at the lower edge of the frame; the third layer of super surface is cut on the upper edge of the frame; the second layer of super surface is positioned on two sides of the prismatic frame and is connected with the edge in the middle of the prismatic frame; the stealth layers on the two sides of the frame area have opposite phase gradients; the structures of the super surfaces of the I and III layers are the same; the lattice unit structures are arranged on the stealth layer of each layer so that the phase gradient d phi/dx of the stealth layer of each layer in the direction perpendicular to the incident wave direction satisfies
Linear dispersion d phi/d omega satisfies
Hair brushThe structure is simple, the volume is small, and the processing and the integration are easy; the material has low manufacturing cost and is beneficial to wide application; opens up a new road for realizing achromatic stealth.
Description
Technical Field
The invention relates to the field of optics, in particular to a super-surface stealth device based on an achromatic multilayer frame structure.
Background
The rapid development of metamaterial and super-surface technologies makes stealth a realistic possibility. The metamaterial stealth technology is limited by problems of rigorous material parameters, heavy volume, difficulty in processing and integration and the like in the development process, so that the development of the metamaterial stealth technology is hindered. The super surface is an artificial layered material with the thickness smaller than the wavelength, and compared with the wavelength of the working frequency, the super surface has the advantages of negligible thickness, small physical space, simple preparation process, convenience for large-scale integration, low loss and the like. By designing geometric or electromagnetic parameters on a micro size, the characteristics of electromagnetic wave polarization, amplitude, phase, polarization mode, propagation mode and the like can be flexibly and effectively regulated and controlled, and further controllable and specific electromagnetic characteristics are obtained. The terahertz switch has wide application in many fields, such as terahertz switches, vortex beam generation, electromagnetic super-surface stealth technology and the like, and the appearance of the terahertz switch opens a brand-new gate for realizing stealth of scientific research personnel.
However, the bandwidth corresponding angle of the current super-surface stealth technology is narrow, so that the use of the super-surface stealth technology is limited.
Disclosure of Invention
It is an object of the present invention to provide a super-surface hider based on an achromatic multi-layer frame structure, which solves one or more of the above mentioned technical problems.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a super-surface stealth device based on an achromatic multilayer frame structure comprises a frame area and a stealth area;
the rhombic frame area is a rhombic frame;
the stealth area comprises a stealth layer, the stealth layer is respectively a first layer super surface, a second layer super surface and a third layer super surface from bottom to top,
the stealth layer is vertical to the bottom surface of the rhombic frame, and the super surface of the layer I is cut at the lower edge of the rhombic frame; the third layer of super surface is cut at the upper edge of the rhombic frame; the second-layer super surface is positioned on two sides of the prismatic frame and connected with the edges in the middle of the prismatic frame;
the layer I super surface splits vertically incident plane incident waves, the incident waves are incident on the layer II super surface after changing the direction, and the layer II super surface deflects the incident waves to be incident on the layer III super surface, so that the vertically incident plane incident waves are transmitted around the rhombic frame area;
the invisible layers on the two sides of the diamond-shaped frame area have opposite phase gradients;
the structure of the I-layer super surface is the same as that of the III-layer super surface;
defining the center of the rhombic frame as an original point, wherein a Y axis is superposed with the central axis of the rhombic frame, an X axis is parallel to the stealth layer, and a Z axis is perpendicular to the stealth layer;
the stealth layer of each layer is provided with a micron-sized lattice unit structure, and the lattice unit structures are periodically arranged along the x direction and are arranged in the same direction along the y direction;
the lattice unit structures are arranged on the stealth layers of each layer so that the phase gradient d phi/dx of the stealth layers of each layer in the direction perpendicular to the incident wave direction satisfies
Linear dispersion d phi/d omega satisfies
Wherein x is the horizontal distance between each lattice unit structure and the origin, phi is the transmission phase of the lattice unit structure, omega is the incident wave angular velocity, f is the incident light frequency, C is the light velocity in vacuum, and thetatIs the angle of refraction of the beam.
Preferably, the lattice unit structure is composed of a silicon dielectric.
Preferably, the lattice unit structure comprises a first lattice unit structure; the first unit structure comprises a first substrate and a first column, wherein the length of the first substrate is 100 micrometers, the width of the first substrate is 100 micrometers, and the thickness z of the first substrate is 80 micrometers; the two first columns are arranged on the first substrate in parallel, the central point of each first column is equidistant from the central axis of the first substrate, and the length and the width of each first column are parallel to those of the first substrate; each first column is 2-30 microns in length, 100 microns in width and 200 microns in height, and the distance between two identical silicon columns is 5-30 microns.
Preferably, the lattice unit structure further comprises a second lattice unit structure, the second unit structure comprises a second substrate, and the second substrate has a length of 100 micrometers, a width of 100 micrometers, and a height of 50 micrometers to 120 micrometers.
Preferably, the lattice cell structure further comprises a third lattice cell structure; the third grid unit structure comprises a third substrate and a third column, wherein the third substrate and the third column are concentric with a central axis, and the length and the width of the third substrate and the third column are parallel to each other; the third substrate has a length of 100 micrometers, a width of 100 micrometers, and a thickness of 80 micrometers; the third column has a length of 80-100 micrometers, a width of 1-30 micrometers, and a height of 200 micrometers.
Preferably, the phase gradients of the super surface of the layer I on two sides of the diamond-shaped frame area are-27 degrees and 27 degrees respectively; the phase gradients of the third-layer super surface on the two sides of the diamond-shaped frame area are-27 degrees and 27 degrees respectively; the phase gradients of the second-layer super surface on the two sides of the diamond-shaped frame area are 54 degrees and-54 degrees respectively.
Preferably, the incident wave is split by the super surface of the layer I, so that the light beam is deflected by 30 degrees and is incident on the super surface of the layer II; and the second-layer super surface deflects the received incident wave by 60 degrees and then irradiates the third-layer super surface.
The invention has the technical effects that:
(1) the invention has simple structure, small volume and easy processing and integration.
(2) The material of the invention has low manufacturing cost and is beneficial to wide application.
(3) The design method and the device structure not only enrich the variety of the terahertz functional device, but also open up a new way for realizing achromatic stealth.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention.
In the drawings:
FIG. 1 is a schematic diagram of a super-surface cloaking device according to an embodiment.
Fig. 2 is a schematic diagram of a super-surface cloaking device design according to an embodiment.
FIG. 3 is a schematic diagram of the structure of an achromatic super surface unit according to an embodiment.
Wherein in fig. 2, r denotes a first lattice unit structure; representing a second lattice unit structure; and third shows a third cell unit structure.
FIG. 4 is a top view of an achromatic super surface unit structure according to an embodiment.
FIG. 5 is a schematic diagram of linear dispersion of the first lattice unit structure of the achromatic super surface of the example.
Wherein in fig. 5, the abscissa is the frequency; the ordinate is the phase (degrees).
FIG. 6 is a schematic diagram of linear dispersion of the second lattice cell structure and the third lattice cell structure of the achromatic super surface of the embodiment.
Wherein in fig. 6, the abscissa is the frequency; the ordinate is the phase (degrees).
FIG. 7 is a schematic phase gradient diagram of the achromatic super surface unit structure of the example at 0.45THz and 0.9THz frequencies.
Wherein in fig. 7, the abscissa is the horizontal distance (micrometers) of the lattice unit structure from the origin; the ordinate is the phase (degrees).
FIG. 8 is the electric field of a plane wave of example 0.45THz passing through the left half of the achromatic metasurface of layer I, layer II and layer III (the scale shows the distribution of the electric field energy).
FIG. 9 is a graph of the electric field of the planar wave of example 0.9THz passing through the left half of the achromatic super surface of layer I, layer II and layer III (the scale indicates the distribution of the electric field energy).
FIG. 10 is a graph of the near field distribution (scale shows the distribution of electric field energy) of the super-surface stealth device at 0.45THz and 0.9THz frequencies, respectively, for an embodiment.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions are provided only for the purpose of illustrating the present invention and are not to be construed as unduly limiting the invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
As shown in figures 1 and 2, the super-surface stealth device based on the achromatic multi-layer framework structure comprises a framework area and a stealth area.
The diamond-shaped frame area is adjusted according to the size and the shape of the hidden object.
The rhombic frame area is a rhombic frame.
The stealth area comprises a stealth layer, the stealth layer is respectively a layer I super surface, a layer II super surface and a layer III super surface from bottom to top, and the layer I super surface is cut at the lower edge of the rhombic frame; the third layer of super surface is cut at the upper edge of the rhombic frame; and two sides of the second layer of super-surface prismatic frame are connected with the edge in the middle of the prismatic frame.
The third-layer super surface splits a vertically incident plane incident wave, the incident wave is incident on the second-layer super surface after changing the direction, and the second-layer super surface deflects the incident wave to be incident on the third-layer super surface, so that the vertically incident plane incident wave is transmitted around the rhombic frame area;
the invisible layers on the two sides of the diamond-shaped frame area have opposite phase gradients;
the structure of the I-layer super surface is the same as that of the III-layer super surface;
defining the center of the rhombic frame as an original point, wherein a Y axis is superposed with the central axis of the rhombic frame, an X axis is parallel to the stealth layer, and a Z axis is perpendicular to the stealth layer;
and the stealth layer of each layer is provided with a micron-sized lattice unit structure, and the lattice unit structures are periodically arranged along the x direction and are arranged in the same way along the y direction.
The lattice unit structures are arranged on the stealth layers of each layer so that the phase gradient d phi/dx of the stealth layers of each layer in the direction perpendicular to the incident wave direction satisfies
Linear dispersion d phi/d omega satisfies
Wherein x is the horizontal distance between each lattice unit structure and the origin, phi is the transmission phase of the lattice unit structure, omega is the incident wave angular velocity, f is the incident light frequency, C is the light velocity in vacuum, and thetatIs the angle of refraction of the beam.
Preferably, the lattice unit structure is composed of a silicon dielectric.
The invention simultaneously regulates and controls the phase gradient and the linear dispersion under the broadband frequency of 0.45 THz-0.9 THz, so that the propagation direction of the light beam is constant and cannot be changed along with the difference of the frequency of the light beam, thereby reducing the influence of chromatic aberration on the super surface and obtaining the achromatic function.
As shown in fig. 3, the lattice unit structure includes a first lattice unit structure; the first unit structure comprises a first substrate and a first column, wherein the first substrate is a cuboid with a square bottom surface, the side length of the bottom surface is P, and P is 100 micrometers; the thickness of the substrate was Z, which is 80 microns.
The number of the first cylinders is two, and the two first cylinders are arranged on the first substrate in parallel; each first column has a length a of 2 to 30 micrometers, a width e of 100 micrometers, a height L of 200 micrometers, and a distance b between two identical silicon columns of 5 to 30 micrometers.
As shown in fig. 3, the lattice unit structure further includes a second lattice unit structure, where the second unit structure includes a second substrate, the second substrate is a rectangular solid whose bottom surface is square, the side length of the bottom surface is P, and P is 100 micrometers; the height h is 50-120 microns.
As shown in fig. 3, the lattice cell structure further includes a third lattice cell structure; the third lattice unit structure comprises a third substrate and a third column, wherein the third substrate is a cuboid with a square bottom surface, the side length of the bottom surface is P, and P is 100 micrometers; the thickness of the substrate is Z, and Z is 80 micrometers; the third column has a length c of 80-100 micrometers, a width d of 1-30 micrometers, and a height L of 200 micrometers.
In some embodiments, the phase gradient of the layer i super-surface is-27 ° and 27 ° on both sides of the diamond-shaped frame region, respectively; the phase gradients of the third-layer super surface on the two sides of the diamond-shaped frame area are-27 degrees and 27 degrees respectively; the phase gradients of the second-layer super surface on the two sides of the diamond-shaped frame area are 54 degrees and-54 degrees respectively.
In some embodiments, the first-layer super-surface splits an incident wave to deflect the beam by 30 degrees and then the beam is incident on the second-layer super-surface; and the second-layer super surface deflects the received incident wave by 60 degrees and then irradiates the third-layer super surface.
Example one
As shown in fig. 1 and 2, the frame region is a diamond frame with a length of 1400 microns, a width of 1400 microns and a height of 4849.74 microns.
Wherein, the super surface of the I th layer is located the bottom in rhombus frame district, the super surface of the II th layer is located the middle part in rhombus frame district, the super surface of the III th layer is located the top in rhombus frame district.
The phase gradients of the stealth layers on the two sides of the diamond-shaped frame area are opposite, and the super surface structure of the third layer is the same as that of the third layer.
The institute of each layerMicron-scale lattice unit structures are arranged on the stealth layers and are arranged on the stealth layers of each layer, so that the phase gradient d phi/dx of the stealth layers of each layer in the direction perpendicular to the incident wave direction meets the requirement
Linear dispersion d phi/d omega satisfies
Wherein x is the horizontal distance between each lattice unit structure and the origin, phi is the transmission phase of the lattice unit structure, omega is the incident wave angular velocity, f is the incident light frequency, C is the light velocity in vacuum, and thetatIs the angle of refraction of the beam.
The propagation directions of the beams of the first super surface layer and the third super surface layer are constant at 30 degrees, and the propagation direction of the beam of the second achromatic super surface layer is constant at 60 degrees.
Therefore, the phase gradients of the left and right parts of the super-surface of the layer I and the super-surface of the layer III are respectively 27 degrees and 27 degrees, and the phase gradients of the left and right parts of the super-surface of the layer II are respectively 54 degrees and 54 degrees.
Preferably, the lattice unit structure is composed of a silicon dielectric.
As shown in fig. 3, the left and right portions of the I-th and iii-th super surfaces are composed of 28 × 14 unit structures in which 7 first unit lattice structures, 5 second unit lattice structures, and 2 third unit lattice structures are periodically arranged along the length direction.
As shown in table 1 below, data of lattice unit structures on the I-th layer super surface and the iii-th layer super surface and arrangement of the lattice unit structures:
as shown in fig. 3, the left and right parts of the second-layer super-surface are composed of 14 × 14 unit structures in which 3 first unit lattice structures, 3 second unit lattice structures, and 1 third unit lattice structure are periodically arranged along the length direction.
FIG. 4 is a top view of an achromatic super surface unit structure according to an embodiment.
As shown in table 2 below, the data on the lattice unit structures on the second-layer super-surface and the arrangement of the lattice unit structures:
the designed unit structures are arranged according to an achromatic formula, phase gradient and linear dispersion under the broadband frequency of 0.45 THz-0.9 THz are regulated and controlled simultaneously, the first-layer super surface, the second-layer super surface and the third-layer super surface respectively have the functions of beam splitting, deflecting and synthesizing, and hiding of an object is achieved within the broadband frequency range of 0.45 THz-0.9 THz.
FIG. 2 is a schematic diagram of an embodiment of a super-surface cloaking device design;
FIG. 5 is a diagram showing linear dispersion of a first unit structure of an achromatic super surface according to an embodiment;
FIG. 6 is a schematic diagram of linear dispersion of second and third cell structures of an achromatic super-surface according to an embodiment;
FIG. 7 is a schematic diagram of the phase gradient of the super-surface unit structure of the embodiment at the frequency of 0.45THz and 0.9 THz;
FIG. 8 is a graph of the electric field of a plane wave of example 0.45THz passing through the super surface of the layer I, the super surface of the layer II and the super surface of the left half part of the super surface of the layer III (the scale indicates the distribution of the energy of the electric field);
FIG. 9 is a graph of the electric field of the plane wave of example 0.9THz passing through the super surface of the layer I, the super surface of the layer II and the super surface of the left half part of the super surface of the layer III (the scale indicates the distribution of the energy of the electric field);
FIG. 10 is a diagram showing the near field distribution of the super-surface stealth device at 0.45THz and 0.9THz frequencies (scale bar shows the distribution of electric field energy) for the example.
The invention realizes the simultaneous regulation and control of the phase gradient and the linear dispersion under the broadband frequency of 0.45 THz-0.9 THz, so that the propagation direction of the light beam is constant and can not change along with the difference of the frequency of the light beam, thereby reducing the influence of chromatic aberration on the super surface and obtaining the function of achromatism; the whole structure is simple, the manufacturing cost is low, and the wide application is facilitated.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A super surface stealth ware based on multilayer frame construction of achromatism which characterized in that: comprises a frame area and a stealth area;
the rhombic frame area is a rhombic frame,
the stealth area comprises a stealth layer, the stealth layer is respectively a first layer super surface, a second layer super surface and a third layer super surface from bottom to top,
the stealth layer is vertical to the bottom surface of the rhombic frame, and the super surface of the layer I is cut at the lower edge of the rhombic frame; the third layer of super surface is cut at the upper edge of the rhombic frame; the second-layer super surface is positioned on two sides of the prismatic frame and connected with the edges in the middle of the prismatic frame;
the layer I super surface splits vertically incident plane incident waves, the incident waves are incident on the layer II super surface after changing the direction, and the layer II super surface deflects the incident waves to be incident on the layer III super surface, so that the vertically incident plane incident waves are transmitted around the rhombic frame area;
the invisible layers on the two sides of the diamond-shaped frame area have opposite phase gradients;
the structure of the I-layer super surface is the same as that of the III-layer super surface;
defining the center of the rhombic frame as an original point, wherein a Y axis is superposed with the central axis of the rhombic frame, an X axis is parallel to the stealth layer, and a Z axis is perpendicular to the stealth layer;
micron-scale lattice unit structures are arranged on the stealth layer of each layer,
the lattice unit structures are arranged on the stealth layers of each layer so that the phase gradient d phi/dx of the stealth layers of each layer in the direction perpendicular to the incident wave direction satisfies
Linear dispersion d phi/d omega satisfies
Wherein x is the horizontal distance between each lattice unit structure and the origin, phi is the transmission phase of the lattice unit structure, omega is the incident wave angular velocity, f is the incident light frequency, C is the light velocity in vacuum, and thetatIs the angle of refraction of the beam.
2. The achromatic multi-layer frame structure-based super surface stealth device according to claim 1, wherein the lattice unit structure is composed of a silicon medium.
3. The ultra-surface stealth device based on an achromatic multi-layer frame structure according to claim 2,
the lattice unit structure comprises a first lattice unit structure;
the first unit structure includes a first base and a first pillar,
the first substrate has a length of 100 microns, a width of 100 microns, and a thickness z of 80 microns;
the number of the first cylinders is two, and the two first cylinders are arranged on the first substrate in parallel;
each first column is 2-30 microns in length, 100 microns in width and 200 microns in height, and the distance between two identical silicon columns is 5-30 microns.
4. The ultra-surface stealth device based on an achromatic multi-layer frame structure according to claim 2,
the lattice unit structure further comprises a second lattice unit structure, the second unit structure comprises a second substrate, and the second substrate is 100 micrometers in length, 100 micrometers in width and 50 micrometers-120 micrometers in height.
5. The ultra-surface stealth device based on an achromatic multi-layer frame structure according to claim 2,
the lattice cell structure further includes a third lattice cell structure;
the third lattice cell structure includes a third substrate and a third pillar;
the third substrate has a length of 100 micrometers, a width of 100 micrometers, and a thickness of 80 micrometers;
the third column has a length of 80-100 micrometers, a width of 1-30 micrometers, and a height of 200 micrometers.
6. The ultra-surface stealth device based on an achromatic multi-layer frame structure according to claim 1,
the phase gradients of the super surface of the layer I on the two sides of the diamond-shaped frame area are-27 degrees and 27 degrees respectively;
the phase gradients of the third-layer super surface on the two sides of the diamond-shaped frame area are-27 degrees and 27 degrees respectively;
the phase gradients of the second-layer super surface on the two sides of the diamond-shaped frame area are 54 degrees and-54 degrees respectively.
7. The ultra-surface stealth device based on an achromatic multi-layer frame structure according to claim 1,
splitting incident waves by the super surface of the layer I to deflect the light beams by 30 degrees and then to be incident on the super surface of the layer II;
and the second-layer super surface deflects the received incident wave by 60 degrees and then irradiates the third-layer super surface.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114721072A (en) * | 2022-05-05 | 2022-07-08 | 中国计量大学 | Oblique incidence super-surface stealth device based on achromatic multilayer frame structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114721072A (en) * | 2022-05-05 | 2022-07-08 | 中国计量大学 | Oblique incidence super-surface stealth device based on achromatic multilayer frame structure |
| CN114721072B (en) * | 2022-05-05 | 2024-01-02 | 中国计量大学 | Oblique incidence super-surface stealth device based on achromatic multi-layer frame structure |
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