CN114220734A - Manufacturing method of trench gate - Google Patents
Manufacturing method of trench gate Download PDFInfo
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- CN114220734A CN114220734A CN202111514005.2A CN202111514005A CN114220734A CN 114220734 A CN114220734 A CN 114220734A CN 202111514005 A CN202111514005 A CN 202111514005A CN 114220734 A CN114220734 A CN 114220734A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 35
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 239000007772 electrode material Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
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Abstract
The invention discloses a manufacturing method of a trench gate, which comprises the following steps: step one, forming a groove on the surface of the semiconductor substrate. And step two, forming a first oxidation layer, wherein the top of the groove needs to be kept in an opening state after the first oxidation layer is formed. And step three, depositing a second dielectric layer, wherein after the second dielectric layer is formed, the top opening of the groove is required to be closed, and a cavity surrounded by the second dielectric layer is formed in the groove. And fourthly, carrying out the first back-etching on the second dielectric layer to remove the second dielectric layer exposed outside the cavity and ensure that the second dielectric layer at the sealing position of the top of the cavity is reserved. And fifthly, carrying out second etching on the first oxidation layer from the top to the bottom by taking the second dielectric layer on the periphery of the cavity as a mask to form a grid bottom oxidation layer. And sixthly, removing the second dielectric layer. And step seven, growing the gate oxide layer. The invention can simplify the formation process of BTO, thereby reducing the process cost.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for manufacturing a trench gate.
Background
In the MOS transistor, a gate structure includes a gate oxide layer and a polysilicon gate formed on the surface of the gate oxide layer, the polysilicon gate usually covers a channel region and is used for forming a channel connecting a source and a drain on the surface of the channel region, and a thinner gate oxide layer is generally required in order to provide high controllability of the gate; but again a thick gate oxide is required for high gate reliability, and small miller capacitance. The thinner gate oxide layer is beneficial to controlling the opening of a channel, but the etching performance of the thinner gate oxide layer is reduced, and meanwhile, the Miller capacitance is increased.
The gate structure includes a planar gate and a trench gate, and the trench gate can obtain larger current density and smaller on-resistance and is often applied to a power device.
For trench gates, it is common to include a trench, a gate oxide layer formed on the inside surface of the trench, including the bottom surface and the sides, and a polysilicon gate completely filling the trench. The trench gate needs to pass through the channel region so that the polysilicon gate can laterally cover the channel region so that a channel can be formed on the surface of the channel region that is laterally covered by the polysilicon gate when the gate is opened.
As can be seen from the above description, there is a conflict between the requirements of the gate oxide thickness for gate controllability and reliability and miller capacitance, for trench gates, in order to compromise this conflict. It is often necessary to use a trench Bottom Thick Oxide (BTO) process in the trench gate, where BTO is referred to as gate Bottom Oxide in this specification, and "Thick" in the trench Bottom Thick Oxide means thicker in thickness than the gate Oxide.
Thus, there are two types of post-oxide layers in the trench gate, one BTO and one gate oxide. The oxide layer between the polysilicon gate and the channel region is a thinner gate oxide layer, so that the original gate control force can be ensured. And a thick oxide layer, BTO, is used at the bottom and bottom corners (corners) where reliability problems are likely to occur to ensure high reliability of the device.
However, the BTO process increases the process flow and thus the manufacturing cost. How to realize this structure at low cost is very important. There are two mainstream methods for achieving BTO in the prior art.
The existing first method is as follows: the trench is filled with a High Density Plasma (HDP) Oxide layer (Oxide) and then planarized and etched back by Chemical Mechanical Polishing (CMP), which is very expensive.
The second conventional method is: firstly, forming a thicker BTO layer, wherein the BTO layer is positioned on the whole inner side surface of the groove and the outer surface of the groove after being formed; at this time, the whole groove is completely filled by coating photoresist, and the photoresist can be filled to the surface outside the groove at the same time; adjusting the exposure amount through the thickness difference of the photoresist on the outer surface of the groove and the inner part of the groove to ensure that the surface is completely exposed and the exposure in the groove is insufficient, so that the photoresist with the required thickness can be reserved in the groove after development; protecting a thick gate oxide (BTO) layer formed in advance by using the photoresist reserved in the groove, and removing the thick gate oxide in other areas by using a wet process; after that, the thin gate oxide in the channel region, i.e., the gate oxide layer described above, is formed again. As can be seen from the above, the second method requires an additional photolithography, and the cost is also high. Moreover, this method is difficult to implement for low aspect ratio trench structures due to the coating characteristics of the photoresist.
Fig. 1 is a schematic diagram of a trench gate with BTO formed by a conventional method; it can be seen that a thicker BTO layer 102 is formed at the bottom of the trench 101, a thinner gate oxide layer 103 is formed on the sides of the trench 101 at the top of the BTO layer 102, and finally a polysilicon gate 104 completely fills the trench 101.
Fig. 2 is a schematic diagram illustrating a photoresist pattern after a second conventional method for forming a trench gate with BTO is performed; it can be seen that the trench 201 has a smaller aspect ratio, i.e., a shallower depth and a wider width, and the photoresist 203 is coated after the thicker oxide layer 202 for forming the BTO layer is formed, and it can be seen that, because the aspect ratio of the trench 201 is smaller, the photoresist 203 has a poor filling form for the trench 201, and a recess as shown by a dotted line 204 is formed at the top of the trench 201, which is not favorable for the subsequent exposure and development of the photoresist 203 and the subsequent wet etching of the oxide layer 202.
Disclosure of Invention
The present invention provides a method for manufacturing a trench gate, which can simplify the formation process of a gate bottom oxide layer, i.e., BTO, thereby reducing the process cost.
In order to solve the above technical problem, the method for manufacturing a trench gate provided by the present invention comprises the following steps:
step one, forming a groove on the surface of the semiconductor substrate.
And step two, forming a first oxidation layer on the bottom surface and the side surface of the groove and the surface outside the groove.
The growth rate of the first oxide layer at the top corner of the trench is greater than that at the side face of the trench, and the top of the trench needs to be kept in an open state after the first oxide layer is formed.
And thirdly, depositing a second dielectric layer on the surface of the first oxide layer.
The growth rate of the second dielectric layer at the top corner of the trench is greater than that at the side face of the trench, the top opening of the trench needs to be closed after the second dielectric layer is formed, and the second dielectric layer forms a cavity surrounded by the second dielectric layer in the trench.
And fourthly, carrying out first back etching on the second dielectric layer.
And removing the second dielectric layer exposed outside the cavity by the first etching back, and ensuring that the second dielectric layer at the sealing position of the top of the cavity is reserved, so that the cavity is still enclosed and sealed by the second dielectric layer.
And fifthly, carrying out second etching on the first oxide layer, wherein after the second etching, the first oxide layer is only reserved on the bottom surface of the groove and the bottom area of the side face and forms a grid bottom oxide layer, and the second etching takes the second medium layer on the periphery side of the cavity as a mask to realize the etching of the first oxide layer from the top to the bottom.
And sixthly, removing the second dielectric layer.
And seventhly, growing a gate oxide layer, wherein the gate oxide layer is positioned on the side face of the groove at the top of the oxide layer at the bottom of the grid electrode, and the thickness of the gate oxide layer is smaller than that of the oxide layer at the bottom of the grid electrode.
The further improvement is that the method also comprises the following steps:
and step eight, filling a gate electrode material layer in the groove.
In a further improvement, the gate electrode material layer is a polysilicon gate.
In a further improvement, the semiconductor substrate is a silicon substrate.
In a further improvement, the first oxide layer is silicon oxide, and the gate oxide layer is silicon oxide.
In a further improvement, the process for forming the first oxide layer in the second step adopts a thermal oxidation process or a chemical vapor deposition process or a thermal oxidation process plus a chemical vapor deposition process.
In a further improvement, in the seventh step, a thermal oxidation process is used to form the gate oxide layer.
In a further improvement, in the second step, after the first oxide layer is formed, the width of the top opening of the trench is
The further improvement is that after the deposition in the third step is finished, the thickness of the second dielectric layer on the surface of the first oxide layer outside the groove is
In a further improvement, the material of the second dielectric layer comprises silicon nitride.
The further improvement is that the first etching back in the fourth step adopts dry etching.
In a further improvement, in the sixth step, the second dielectric layer is removed by wet etching.
In a further improvement, in the fifth step, the second etching is wet etching.
The further improvement is that the trench gate is a gate structure of the MOS transistor, and the method further comprises the following steps:
step nine, forming a channel region, wherein the depth of the channel region is smaller than that of the gate oxide layer; the gate electrode material layer covers the channel region through the side face of the gate oxide layer, and the surface of the channel region covered by the side face of the gate electrode material layer is used for forming a channel; the semiconductor substrate is doped with a first conductivity type, and the channel region is doped with a second conductivity type.
And step ten, forming a source region with the first conductive type heavy doping on the surface of the channel region.
And eleventh, forming a first conductive type heavily doped drain region on the back surface of the semiconductor substrate.
The MOS transistor is an NMOS transistor, the first conduction type is an N type, and the second conduction type is a P type; the MOS transistor is a PMOS transistor, the first conduction type is a P type, and the second conduction type is an N type.
The invention utilizes the characteristics that the growth rate at the top corner of the groove is greater than the growth rate of the side face of the groove when the medium layer is filled in the groove and the sealing is generated at the top of the groove along with the increase of the thickness of the medium layer, after the first oxidation layer which does not seal the top of the groove is formed, a second medium layer is formed to seal the top of the groove and a cavity which is surrounded by the second medium layer is formed in the groove, then the second medium layer is etched back to remove the second medium layer on the surface of the first oxidation layer outside the cavity, thus the exposed first oxidation layer can realize the etching from the top to the bottom by using the residual second medium layer which surrounds the cavity as a mask, namely the second etching is the etching from the top to the bottom, thus the needed grid bottom oxidation layer can be obtained, and the invention does not need to adopt a photoetching process to define the mask of the second etching of the first oxidation layer, the method can be realized by adding the second dielectric layer which can seal the groove once and carrying out the first back etching on the second dielectric layer, and compared with the photoetching process, the method has the advantages that the process is simpler, so the method can simplify the forming process of the oxide layer at the bottom of the grid, and the process cost can be reduced.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic diagram of a trench gate with BTO formed by a prior art method;
FIG. 2 is a schematic diagram of a second prior art method for forming a trench gate with BTO after photoresist patterning;
FIG. 3 is a flow chart of a method of fabricating a trench gate in accordance with an embodiment of the present invention;
fig. 4A to 4G are schematic structural diagrams of devices in the method for manufacturing a trench gate according to the embodiment of the invention.
Detailed Description
Fig. 3 is a flowchart illustrating a method for manufacturing a trench gate according to an embodiment of the present invention; as shown in fig. 4A to 4G, which are schematic structural diagrams of devices in the method for manufacturing a trench gate according to the embodiment of the present invention, the method for manufacturing a trench gate according to the embodiment of the present invention includes the following steps:
in step one, as shown in fig. 4A, a trench 302 is formed in a surface of a semiconductor substrate 301.
In the method according to the embodiment of the present invention, the semiconductor substrate 301 is a silicon substrate.
Step two, as shown in fig. 4A, a first oxide layer 303 is formed on the bottom surface and the side surface of the trench 302 and the surface outside the trench 302.
The growth rate of the first oxide layer 303 at the top corner of the trench 302 is greater than that at the side face of the trench 302, and the top of the trench 302 needs to be kept in an open state after the first oxide layer 303 is formed.
In the method of the embodiment of the invention, the first oxide layer 303 is silicon oxide.
The first oxide layer 303 is formed by a thermal oxidation process, a chemical vapor deposition process, or a thermal oxidation process plus a chemical vapor deposition process.
Preferably, after the first oxide layer 303 is formed, the width of the top opening of the trench 302 is set to be
One typical value is
. The thicker the thickness of the first oxide layer 303, the smaller the top opening of the trench 302.
Step three, as shown in fig. 4B, depositing a second dielectric layer 304 on the surface of the first oxide layer 303.
The growth rate of the second dielectric layer 304 at the top corner of the trench 302 is greater than the growth rate at the side of the trench 302, the top opening of the trench 302 needs to be closed after the second dielectric layer 304 is formed, and the second dielectric layer 304 forms a cavity 305 surrounded by the second dielectric layer 304 inside the trench 302.
In the method of the embodiment of the invention, after the deposition in the third step is completed, the thickness of the second dielectric layer 304 on the surface of the first oxide layer 303 outside the trench 302 is set to be
One typical value is
To ensure that the top opening of the trench 302 can be closed.
The material of the second dielectric layer 304 includes silicon nitride.
Step four, as shown in fig. 4C, the second dielectric layer 304 is etched back for the first time.
The first etching back removes the second dielectric layer 304 exposed outside the cavity 305 and ensures that the second dielectric layer 304 at the top seal of the cavity 305 remains, so that the cavity 305 is still enclosed by the second dielectric layer 304.
In the method of the embodiment of the invention, the first etching back in the fourth step adopts dry etching.
Step five, as shown in fig. 4D, performing second etching on the first oxide layer 303, where after the second etching, the first oxide layer 303 is only remained on the bottom surface and the bottom area of the side surface of the trench 302 and forms a gate bottom oxide layer 303a, and the second etching uses the second dielectric layer 304 on the periphery side of the cavity 305 as a mask to realize etching of the first oxide layer 303 from the top to the bottom.
In the method of the embodiment of the invention, the second etching is wet etching.
Step six, as shown in fig. 4E, the second dielectric layer 304 is removed.
In the method of the embodiment of the invention, the second dielectric layer 304 is removed by wet etching.
Seventhly, as shown in fig. 4F, growing a gate oxide layer 306, wherein the gate oxide layer 306 is located on the side surface of the trench 302 at the top of the gate bottom oxide layer 303a, and the thickness of the gate oxide layer 306 is smaller than that of the gate bottom oxide layer 303 a.
In the method of the embodiment of the present invention, the gate oxide layer 306 is silicon oxide.
Preferably, the gate oxide layer 306 is formed by a thermal oxidation process.
Before the gate oxide layer 306 is formed, a step of forming a sacrificial oxide layer and then removing the sacrificial oxide layer is further included to eliminate defects on the side surface of the trench 302.
Step eight, as shown in fig. 4F, filling the trench 302 with a gate electrode material layer 307.
In the method of the embodiment of the present invention, the gate electrode material layer 307 is a polysilicon gate.
The trench gate is a gate structure of the MOS transistor, and further comprises the following steps:
step nine, as shown in fig. 4G, forming a channel region 308, wherein the depth of the channel region 308 is smaller than the depth of the gate oxide layer 306; the gate electrode material layer 307 covers the channel region 308 through the side surface of the gate oxide layer 306, and the surface of the channel region 308 covered by the side surface of the gate electrode material layer 307 is used for forming a channel; the semiconductor substrate 301 is doped with a first conductivity type and the channel region 308 is doped with a second conductivity type.
Step ten, as shown in fig. 4G, a source region 309 with a heavy doping of the first conductivity type is formed on the surface of the channel region 308.
Step eleven, forming a first conduction type heavily doped drain region on the back surface of the semiconductor substrate 301.
In the embodiment of the invention, the MOS transistor is an NMOS transistor, the first conduction type is an N type, and the second conduction type is a P type. In other embodiments can also be: the MOS transistor is a PMOS transistor, the first conduction type is a P type, and the second conduction type is an N type.
The embodiment of the invention utilizes the characteristics that the growth rate at the top corner of the trench 302 is greater than the growth rate of the side face of the trench 302 when the trench 302 is filled with the dielectric layer and the top of the trench 302 is sealed along with the increase of the thickness of the dielectric layer, after the first oxide layer 303 which does not seal the top of the trench 302 is formed, the second dielectric layer 304 is formed to seal the top of the trench 302 and the cavity 305 surrounded by the second dielectric layer 304 is formed inside the trench 302, and then the second dielectric layer 304 is etched back to remove the second dielectric layer 304 on the surface of the first oxide layer 303 outside the cavity 305, so that the exposed first oxide layer 303 can be etched from the top to the bottom by using the remaining second dielectric layer 304 which surrounds the cavity 305 as a mask, i.e. the second etching is the etching from the top to the bottom, so as to obtain the required gate bottom oxide layer 303a, as can be seen from the above, in the embodiment of the present invention, the mask for the second etching of the first oxide layer 303 is not required to be defined by using the photolithography process, but the second dielectric layer 304 capable of sealing the trench 302 is added once and the first etching back is performed on the second dielectric layer 304.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (15)
1. A method for manufacturing a trench gate is characterized by comprising the following steps:
step one, forming a groove on the surface of a semiconductor substrate;
step two, forming a first oxidation layer on the bottom surface and the side surface of the groove and the surface outside the groove;
the growth rate of the first oxide layer at the top corner of the trench is greater than that at the side face of the trench, and the top of the trench needs to be kept in an open state after the first oxide layer is formed;
depositing a second dielectric layer on the surface of the first oxide layer;
the growth rate of the second dielectric layer at the vertex angle of the groove is greater than that at the side face of the groove, the top opening of the groove needs to be closed after the second dielectric layer is formed, and the second dielectric layer forms a cavity surrounded by the second dielectric layer in the groove;
fourthly, carrying out first back etching on the second medium layer;
the first etching back removes the second dielectric layer exposed outside the cavity and ensures that the second dielectric layer at the sealing position of the top of the cavity is reserved, so that the cavity is still enclosed and sealed by the second dielectric layer;
fifthly, performing second etching on the first oxide layer, wherein the first oxide layer is only reserved on the bottom surface and the bottom area of the side face of the groove after the second etching and forms a grid bottom oxide layer, and the second etching takes the second medium layer on the periphery of the cavity as a mask to realize the etching of the first oxide layer from the top to the bottom;
sixthly, removing the second dielectric layer;
and seventhly, growing a gate oxide layer, wherein the gate oxide layer is positioned on the side face of the groove at the top of the oxide layer at the bottom of the grid electrode, and the thickness of the gate oxide layer is smaller than that of the oxide layer at the bottom of the grid electrode.
2. The method of manufacturing a trench gate of claim 1, further comprising the steps of:
and step eight, filling a gate electrode material layer in the groove.
3. The method of manufacturing a trench gate as claimed in claim 2, wherein: the gate electrode material layer is a polysilicon gate.
4. The method of manufacturing a trench gate as claimed in claim 1, wherein: the semiconductor substrate is a silicon substrate.
5. The method of manufacturing a trench gate as claimed in claim 4, wherein: the first oxide layer is silicon oxide, and the gate oxide layer is silicon oxide.
6. The method of manufacturing a trench gate as claimed in claim 5, wherein: and step two, the process for forming the first oxide layer adopts a thermal oxidation process or a chemical vapor deposition process or a thermal oxidation process plus a chemical vapor deposition process.
7. The method of manufacturing a trench gate as claimed in claim 5, wherein: and step seven, forming the gate oxide layer by adopting a thermal oxidation process.
8. The method of manufacturing a trench gate as claimed in claim 1, wherein: in the second step, after the first oxide layer is formed, the width of the top opening of the trench is
9. The method of manufacturing a trench gate as claimed in claim 8, wherein: after the deposition in the third step is finished, the thickness of the second dielectric layer on the surface of the first oxide layer outside the groove is
10. The method of manufacturing a trench gate as claimed in claim 1, wherein: the material of the second dielectric layer comprises silicon nitride.
11. The method of manufacturing a trench gate as claimed in claim 10, wherein: and step four, dry etching is adopted for the first etching back.
12. The method of manufacturing a trench gate as claimed in claim 10, wherein: and sixthly, removing the second dielectric layer by wet etching.
13. The method of manufacturing a trench gate as claimed in claim 1, wherein: and fifthly, wet etching is adopted for the second etching.
14. The method of manufacturing a trench gate as claimed in claim 2, wherein: the trench gate is a gate structure of the MOS transistor, and further comprises the following steps:
step nine, forming a channel region, wherein the depth of the channel region is smaller than that of the gate oxide layer; the gate electrode material layer covers the channel region through the side face of the gate oxide layer, and the surface of the channel region covered by the side face of the gate electrode material layer is used for forming a channel; the semiconductor substrate is doped with a first conductive type, and the channel region is doped with a second conductive type;
tenth, forming a source region with heavily doped first conductivity type on the surface of the channel region;
and eleventh, forming a first conductive type heavily doped drain region on the back surface of the semiconductor substrate.
15. The method of manufacturing a trench gate as claimed in claim 14, wherein: the MOS transistor is an NMOS transistor, the first conduction type is an N type, and the second conduction type is a P type; the MOS transistor is a PMOS transistor, the first conduction type is a P type, and the second conduction type is an N type.
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| CN202111514005.2A CN114220734A (en) | 2021-12-13 | 2021-12-13 | Manufacturing method of trench gate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117276346A (en) * | 2023-10-17 | 2023-12-22 | 深圳芯能半导体技术有限公司 | Shielded gate field effect transistor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117276346A (en) * | 2023-10-17 | 2023-12-22 | 深圳芯能半导体技术有限公司 | Shielded gate field effect transistor and preparation method thereof |
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