CN114211389A - Indium phosphide wafer and preparation method thereof - Google Patents
Indium phosphide wafer and preparation method thereof Download PDFInfo
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- CN114211389A CN114211389A CN202210164144.5A CN202210164144A CN114211389A CN 114211389 A CN114211389 A CN 114211389A CN 202210164144 A CN202210164144 A CN 202210164144A CN 114211389 A CN114211389 A CN 114211389A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/108—Polyethers, i.e. containing di- or higher polyoxyalkylene groups etherified
Abstract
The application relates to the field of semiconductor materials, in particular to an indium phosphide wafer and a preparation method thereof, wherein the preparation method of the indium phosphide wafer comprises the following operation steps: s1, coating a layer of protective solution on the surface of the indium phosphide crystal, cutting the indium phosphide crystal into an indium phosphide wafer, and removing the protective solution after the cutting is finished; s2, carrying out rough grinding and fine grinding on the indium phosphide wafer processed in the step S1 in sequence; s3, thinning the grinded indium phosphide wafer; s4, carrying out chemical mechanical polishing on the thinned indium phosphide wafer by using polishing solution, wherein the polishing solution comprises an oxidant and an abrasive, and the chemical mechanical polishing comprises rough polishing and finish polishing in sequence; and S5, cleaning the indium phosphide wafer after the chemical mechanical polishing to obtain the finished indium phosphide wafer. The method for preparing the indium phosphide wafer can reduce the surface roughness of the indium phosphide wafer.
Description
Technical Field
The application relates to the field of semiconductor materials, in particular to an indium phosphide wafer and a preparation method thereof.
Background
Indium phosphide crystal is an important semiconductor material, and has been widely used as an epitaxial layer substrate material in products such as detectors, lasers, solar cells, and high-speed digital integrated circuits because of its luminescent properties and high electron mobility. With the development of miniaturization of devices, the quality requirement on wafers is higher and higher, and indium phosphide wafers generally need to be processed by cutting, grinding, polishing, cleaning and other processes so as to meet the quality requirement on products.
However, since the texture of the InP wafer is soft and brittle, the InP wafer is easily damaged during the polishing process, and the surface quality of the wafer cannot be improved while controlling the thickness of the InP wafer.
Disclosure of Invention
In order to improve the surface quality of an indium phosphide wafer while controlling the thickness of the indium phosphide wafer, the present application provides an indium phosphide wafer and a method for producing the same.
In a first aspect, the present application provides a method for preparing an indium phosphide wafer, which adopts the following technical scheme:
a preparation method of an indium phosphide wafer comprises the following operation steps:
s1, coating a layer of protective solution on the surface of the indium phosphide crystal, cutting the indium phosphide crystal into an indium phosphide wafer, and removing the protective solution after the cutting is finished;
s2, carrying out coarse grinding and fine grinding on the indium phosphide wafer processed in the step S1 in sequence, wherein the pressure of the coarse grinding is 0.1-0.5N/cm2The thickness after grinding is 20-30 μm; the pressure of the fine grinding is 0.01-0.05N/cm2The thickness after grinding is 5-7 μm;
s3, thinning the grinded indium phosphide wafer;
s4, carrying out chemical mechanical polishing on the thinned indium phosphide wafer by using polishing solution, wherein the polishing solution comprises an oxidant and an abrasive, and the chemical mechanical polishing comprises rough polishing and finish polishing in sequence;
and S5, cleaning the indium phosphide wafer after the chemical mechanical polishing to obtain the finished indium phosphide wafer.
By adopting the technical scheme, the grinding adopts a mode of combining coarse grinding and fine grinding, the coarse grinding pressure is high, the grinding progress can be accelerated, and the surface roughness of the indium phosphide wafer can be quickly reduced; the fine grinding pressure is lower than the coarse grinding pressure, so that the friction force on the indium phosphide wafer is lower, the grinding speed is lower than the coarse grinding speed, the damage to the indium phosphide wafer is smaller, the thickness of the indium phosphide wafer to be removed is smaller, and the surface roughness is lower.
Thinning is to further process the indium phosphide crystal after grinding, so that better flatness and surface roughness performance can be obtained, and the efficiency of the next chemical mechanical polishing can be improved.
During chemical mechanical polishing, a layer of oxide film can be generated on the surface of the wafer by using an oxidant in the polishing solution, so that the surface layer of the wafer is relatively loose, and the existence of the oxide film can offset mechanical acting force during polishing, thereby reducing the mechanical damage on the surface of the wafer. During the whole polishing process, the oxide film is generated and removed by the abrasive, and the wafer is protected while the polishing operation is not influenced. In the application, the rough polishing process is adopted to obtain higher surface roughness, then the fine polishing process is adopted to obtain superfine atomic level surface roughness, and the two processes are combined to obtain the polished indium phosphide wafer with high efficiency and high quality.
Preferably, in the step S2, the first polishing liquid is added during the coarse polishing, and the second polishing liquid is added during the fine polishing.
By adopting the technical scheme, the first grinding fluid and the second grinding fluid are respectively added in the rough grinding and the fine grinding, which is beneficial to reducing the surface roughness of the indium phosphide wafer.
Preferably, the first grinding fluid comprises the following raw materials in parts by weight: 30-50 parts of first ground material, 5-10 parts of lubricant, 5-10 parts of dispersant and 50-70 parts of deionized water; the second grinding fluid comprises the following raw materials in parts by weight: 30-50 parts of second ground material, 5-10 parts of lubricant, 5-10 parts of dispersant and 50-70 parts of deionized water.
Optionally, the first abrasive and the second abrasive may each be selected from at least one of alumina, silicon carbide, and boron carbide.
Further, the first grinding object and the second grinding object are both made of aluminum oxide.
By adopting the technical scheme, the grinding materials are added in the grinding process of the indium phosphide wafer, so that the grinding is more uniform and sufficient, and the surface roughness of the indium phosphide wafer is reduced.
Preferably, the first ground material in step S2 is flake alumina, and the first ground material has a median particle diameter of 8.0 to 9.0 μm and a thickness of 1.5 to 2.0 μm.
Preferably, the second ground material in step S2 is flake alumina, and the second ground material has a median particle diameter of 3.0 to 3.8 μm and a thickness of 0.9 to 1.4 μm.
By adopting the technical scheme, when the first grinding object or the second grinding object is the flaky alumina, compared with the irregular alumina, the flaky alumina is not easy to roll, so that the crystal, the flaky alumina and the grinding disc are not easy to rub, and the wafer is not easy to crack. The flaky alumina can be laid on the surface of the grinding disc, the rough grinding disc provides resistance for the flaky alumina, and the grinding disc and the flaky alumina form temporary fixation, so that the edge of the flaky alumina rubs against the surface of the indium phosphide wafer, and the part of the indium phosphide wafer where the convex part is generated falls off, thereby reducing the surface roughness and the flatness of the indium phosphide wafer. The roughness of the surface of the indium phosphide wafer is different during rough grinding and fine grinding, so that the particle size of the flaky alumina in the selected grinding liquid is different, and the reduction of the surface roughness of the indium phosphide wafer is facilitated.
Preferably, the dispersant in the first grinding fluid and the second grinding fluid is at least one of sodium alkyl benzene sulfonate, oleoyl polypeptide, alkyl sulfate, fatty acid methyl ester sulfonate, polyether and polyethylene glycol fatty acid ester; and the lubricant in the first grinding liquid and the second grinding liquid is at least one of benzenediol, glycerol and triethanolamine.
Further, the dispersant is preferably sodium dodecyl benzene sulfonate, and the lubricant is preferably triethanolamine.
By adopting the technical scheme, the dispersing agent and the lubricating agent can effectively promote the grinding objects to be dispersed on the grinding disc, so that the grinding objects can reduce the surface roughness of the indium phosphide wafer with higher efficiency and high quality.
Preferably, during the thinning process in step S3, the wafer to be processed is fixed by vacuum adsorption, the thinning thickness is set to 10-15 μm, and the rotation speed is 1000-.
By adopting the technical scheme, the thinned thickness and the thinned rotating speed are set, so that the thinning process with high efficiency and high quality is facilitated, and the roughness of the surface of the indium phosphide wafer is reduced.
In a second aspect, the present application provides an indium phosphide wafer prepared by the above-mentioned preparation method.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the preparation method adopts a process combining grinding, thinning and polishing, and can prepare the indium phosphide wafer with low surface roughness more efficiently and with higher quality;
2. the surface roughness of the indium phosphide wafer in the application can reach 0.1nm at most.
Detailed Description
The present application will be described in further detail with reference to specific examples.
The raw materials in the application are all commercially available products, and the sources of the raw materials are intended to fully disclose the application, and cannot limit the technical scheme of the raw materials and the components thereof, and specifically: the surfactant is polyethylene glycol with the average molecular weight of 200; the wetting penetrant is selected from alkynediol of Shanghai cangchong industry Co., Ltd; the defoaming agent is selected from polyether defoaming agents of Federal Fine chemical Co., Ltd in Guangdong; the triethanolamine and the sodium dodecyl benzene sulfonate are both selected from Shanghai Aladdin Biotechnology GmbH; the boron carbide is selected from peony river diamond boron carbide limited company, and the average grain diameter is 10 mu m; alumina having a median particle diameter of 10 μm in an irregular shape, alumina having a flake shape with a median particle diameter of 8 μm and a thickness of 1.5 μm, alumina having a flake shape with a median particle diameter of 9 μm and a thickness of 2 μm, alumina having a flake shape with a median particle diameter of 3 μm and a thickness of 0.9 μm, alumina having a flake shape with a median particle diameter of 3.8 μm and a thickness of 1.4 μm are selected from new Zhengzhou jade materials GmbH; the silica is selected from the group consisting of chemical Limited, Jinan super meaning, and has an average particle size of 20 nm.
Preparation of protective liquid for cutting indium phosphide crystal
Preparation example 1
The protective solution for cutting the indium phosphide crystal is prepared by the following method:
weighing 200g of polyethylene glycol surfactant, 10g of alkynediol wetting penetrant, 1g of polyether defoamer and 600g of deionized water;
and stirring and mixing the weighed raw materials to prepare the protective solution.
Wherein the surfactant can be at least one of polyalcohol, polyether and fatty alcohol-polyoxyethylene ether; the wetting penetrant can be selected from alkynol; one of them was selected in this preparation example.
Preparation of grinding liquid for grinding indium phosphide wafer
Preparation example 2
The first grinding fluid is used for rough grinding of the indium phosphide wafer and is prepared by the following method:
weighing 30g of irregularly-shaped alumina as a first grinding object, 5g of triethanolamine lubricant, 5g of sodium dodecyl benzene sulfonate dispersant and 50g of deionized water;
and stirring and mixing the weighed raw materials to prepare the first grinding fluid.
Preparation example 3
The first polishing liquid of preparation example 3 was prepared in the same manner as in preparation example 2 except that: the raw materials and the mixing amount of the raw materials are different, and the raw materials are respectively 50g of flaky alumina with the median particle size of 8 mu m and the thickness of 1.5 mu m as a first ground material, 10g of triethanolamine lubricant, 10g of sodium dodecyl benzene sulfonate dispersant and 70g of deionized water; the rest is the same as in preparation example 2.
Preparation example 4
The first polishing liquid of preparation example 4 was prepared in the same manner as in preparation example 3 except that: the first ground material is alumina with flaky median particle diameter of 9 μm and thickness of 2 μm; the rest is the same as in preparation example 3.
Preparation example 5
The second grinding liquid is used for fine grinding of the indium phosphide wafer, and the preparation method, the types of raw materials and the mixing amount are the same as those of preparation example 2.
Preparation example 6
The second polishing liquid of preparation example 6 was prepared in the same manner as in preparation example 5 except that: the raw materials are different in types and mixing amounts, and are respectively 50g of flaky alumina with the median particle size of 3 mu m and the thickness of 0.9 mu m as a second grinding material, 10g of triethanolamine lubricant, 10g of sodium dodecyl benzene sulfonate dispersant and 70g of deionized water; the rest is the same as in preparation example 5.
Preparation example 7
The second polishing liquid of preparation example 7 was prepared in the same manner as in preparation example 6 except that: the second ground material is alumina with flaky median particle diameter of 3.8 μm and thickness of 1.4 μm; the rest is the same as in preparation example 6.
Examples
Example 1
An indium phosphide wafer is prepared by the following operation steps:
s1, coating a layer of protective solution on the surface of the indium phosphide crystal, wherein the protective solution is prepared from preparation example 1, and the weight ratio of the indium phosphide crystal to the protective solution is 50: 1, cutting the indium phosphide crystal by using a wire saw, and cleaning the indium phosphide crystal by using deionized water after the cutting is finished to remove the protective solution on the surface of the indium phosphide wafer;
s2, carrying out coarse grinding and fine grinding on the indium phosphide wafer processed in the step S1 in sequence, wherein the grinding comprises coarse grinding and fine grinding, and the pressure of the coarse grinding is 0.1N/cm2The thickness removed by grinding is 20 μm; the pressure of the fine grinding was 0.01N/cm2The thickness removed by grinding is 5 μm;
wherein, grinding liquid is continuously added at the speed of 400mL/min during grinding, and the grinding liquid comprises the following raw materials in parts by weight: 30g of boron carbide ground material, 5g of triethanolamine lubricant, 5g of sodium dodecyl benzene sulfonate dispersant and 50g of deionized water;
s3, thinning the grinded indium phosphide wafer, and vacuum-adsorbing the wafer to be processed on a working disc of a thinning machine, wherein the thinning thickness of the indium phosphide wafer is set to be 5 microns, and the rotating speed of the working disc is 800 rpm;
s4, carrying out chemical mechanical polishing on the thinned indium phosphide wafer by using polishing solution, wherein the polishing solution comprises an oxidant and an abrasive, and the chemical mechanical polishing comprises rough polishing and finish polishing;
wherein, the oxide in the rough polishing is sodium hypochlorite solution with the volume fraction of 15 percent, and the abrasive is silicon dioxide with the weight percent of 5 percent of the polishing solution; the polishing solution is continuously added at the speed of 220mL/min, and the rotating speed of the rotating disc is 55 rpm; the oxide in the fine polishing is hydrogen peroxide with the volume fraction of 20 percent, the abrasive is silicon dioxide with the weight of 4 percent of the polishing solution, the polishing solution is continuously added at the speed of 350mL/min, and the rotating speed of the turntable is 35 rpm;
s5, cleaning the indium phosphide wafer after the chemical mechanical polishing to obtain a finished indium phosphide wafer;
s6, packaging the finished indium phosphide wafer under the protection of nitrogen to obtain the indium phosphide wafer product.
Example 2
The indium phosphide wafer of example 2 differs from that of example 1 in that: the pressure for the rough grinding of step S2 was 0.25N/cm2The thickness removed by grinding is 25 μm; the pressure of the fine grinding is 0.025N/cm2The thickness removed by grinding is 6 μm; the rest is the same as in example 1.
Example 3
Example 3 an indium phosphide wafer differed from example 1 in that: the pressure for the rough grinding of step S2 was 0.5N/cm2The thickness removed by grinding is 30 μm; the pressure of the fine grinding was 0.05N/cm2The thickness removed by grinding is 7 μm; the rest is the same as in example 1.
Example 4
The indium phosphide wafer of example 4 differs from that of example 2 in that: step S2, adding a first polishing solution during rough polishing, the first polishing solution being prepared from preparation example 2; the second grinding fluid is added during fine grinding, and the second grinding fluid is prepared from preparation example 5; the rest is the same as in example 2.
Example 5
The indium phosphide wafer of example 5 differs from that of example 4 in that: the first polishing liquid added in the rough polishing in step S2 was prepared from preparation example 3; the rest is the same as in example 4.
Example 6
The indium phosphide wafer of example 6 differs from that of example 4 in that: the second polishing liquid added in the fine polishing in step S2 was prepared from preparation example 6; the rest is the same as in example 4.
Example 7
The indium phosphide wafer of example 7 differs from that of example 4 in that: the first polishing liquid added in the rough polishing in step S2 was prepared from preparation example 3; the second polishing liquid added in the fine polishing was prepared from preparation example 6; the rest is the same as in example 4.
Example 8
The indium phosphide wafer of example 8 differs from that of example 7 in that: the first polishing liquid added in the rough polishing in step S2 was prepared from preparation example 4; the second polishing liquid added in the fine polishing was prepared from preparation example 7; the rest is the same as in example 7.
Examples 9 to 10
The indium phosphide wafers of examples 9 to 10 were different from those of example 8 in that: step S3, thinning the grinded indium phosphide wafer, and setting the thinned thickness of the indium phosphide wafer to be 10 μm and 15 μm respectively, wherein the rotating speed is 1000rpm and 1500rpm respectively; the rest is the same as in example 8.
Comparative example
Comparative example 1
The indium phosphide wafer of comparative example 1 differs from that of example 1 in that: the thinning processing of the step S3 is not performed; the rest is the same as in example 1.
Comparative example 2
The indium phosphide wafer of comparative example 2 differs from that of example 1 in that: step S1, no protective liquid is coated before cutting; the rest is the same as in example 1.
Comparative example 3
The indium phosphide wafer of comparative example 3 differs from that of example 1 in that: the pressure for rough grinding in step S2 was 1N/cm2The thickness removed by grinding is 20 μm; the rest is the same as in example 1.
Comparative example 4
The indium phosphide wafer of comparative example 4 differs from that of example 1 in that: the pressure of the fine grinding in step S2 was 0.1N/cm2The thickness removed by grinding is 5 μm; the rest is the same as in example 1.
Performance detection
The indium phosphide wafers obtained in examples 1 to 10 and comparative examples 1 to 4 were subjected to performance testing: the prepared indium phosphide wafer is tested by a surface roughness meter and a planometer, and the surface roughness, the flatness and the angularity of the indium phosphide wafer in the examples 1-10 are respectively less than or equal to 0.2nm, less than or equal to 10 mu m and less than or equal to 10 mu m.
The measurement results are shown in table 1.
TABLE 1 results of measurements of the properties of different InP wafers
| Surface roughness/nm | Flatness/μm | Warp degree/mum | Tortuosity/. mu.m | |
| Example 1 | 0.25 | 4.82 | 1.96 | 3.92 |
| Example 2 | 0.23 | 4.78 | 1.87 | 3.87 |
| Example 3 | 0.24 | 4.80 | 1.89 | 3.88 |
| Example 4 | 0.22 | 4.71 | 1.85 | 3.82 |
| Example 5 | 0.19 | 4.68 | 1.81 | 3.77 |
| Example 6 | 0.18 | 4.66 | 1.78 | 3.74 |
| Example 7 | 0.16 | 4.63 | 1.74 | 3.69 |
| Example 8 | 0.15 | 4.60 | 1.72 | 3.67 |
| Example 9 | 0.11 | 4.54 | 1.65 | 3.55 |
| Example 10 | 0.10 | 4.51 | 1.64 | 3.52 |
| Comparative example 1 | 0.33 | 5.12 | 2.02 | 4.22 |
| Comparative example 2 | 0.28 | 5.13 | 2.03 | 4.19 |
| Comparative example 3 | 0.35 | 5.14 | 2.07 | 4.21 |
| Comparative example 4 | 0.32 | 5.13 | 2.12 | 4.16 |
The results in table 1 show that the values of surface roughness, flatness, warp and bow of the indium phosphide wafers of examples 1-10 are respectively less than those of comparative examples 1-4, which shows that examples 1-10 have better performance indexes of surface roughness, flatness, warp and bow than comparative examples 1-4, wherein the lowest surface roughness of the indium phosphide wafer in the examples can reach 0.1nm, and the excellent performance of the indium phosphide wafer is ensured. The result of the comparative example 1 shows that the thinning treatment is combined with grinding and polishing, so that the roughness, the flatness, the warping degree and the bending degree of the prepared indium phosphide wafer are greatly influenced, and the indium phosphide wafer with excellent performance indexes of surface roughness, flatness, warping degree and bending degree can be obtained by sequentially carrying out the grinding, thinning and polishing steps. The result of the comparative example 2 shows that the protective solution is not coated in the step S1, and the surface roughness, flatness, warp and bow of the prepared indium phosphide wafer are increased, which indicates that the surface roughness, flatness, warp and bow parameters of the indium phosphide wafer are reduced, which indicates that the protective solution needs to be added during cutting, and thus the performance parameters of the indium phosphide wafer can be improved.
The results of examples 1-3 in Table 1 show that the surface roughness, flatness, warp and bow of the InP wafers produced therefrom are different depending on the grinding pressure and the grinding removal thickness, and that example 2 has superior performance parameters to examples 1 and 3. Compared with the comparative example 3, the comparison of example 1 shows that exceeding a certain grinding pressure during rough grinding directly results in higher values of surface roughness, flatness, warp and bow of the prepared indium phosphide wafer, and the performance of the indium phosphide wafer is reduced. Compared with the comparative example 4, the example 1 shows that exceeding a certain grinding pressure during fine grinding directly results in higher values of surface roughness, flatness, warpage and bow of the prepared indium phosphide wafer, and the performance of the indium phosphide wafer is reduced; therefore, the grinding pressure is required to be kept within a certain range during grinding, so that the grinding efficiency can be ensured, and the surface roughness, the flatness, the warping degree and the bending degree of the prepared indium phosphide wafer are good.
The results of examples 4 to 8 in table 1 show that the addition of the first polishing liquid and the second polishing liquid to the rough polishing and the fine polishing, respectively, contributes to the reduction of the surface roughness, flatness, warp and bow values of the indium phosphide wafer. The results of example 5 show that when the first abrasive in the first polishing liquid is tabular alumina, it contributes to the reduction of the values of surface roughness, flatness, warp and bow of the indium phosphide wafer. The results of example 6 show that when the second abrasive in the second polishing liquid is tabular alumina, it also contributes to the reduction of the surface roughness, flatness, warp and bow values of the indium phosphide wafer. Meanwhile, the results of examples 7 to 8 show that when both the first abrasive and the second abrasive are plate-shaped alumina, the performance of the indium phosphide wafer can be improved.
The results of examples 9-10 in table 1 show that different thinning thicknesses of the inp wafer during the thinning process have different effects on the performance of the inp wafer, and that suitable thinning thickness and rotation speed are beneficial to improving the surface roughness, flatness, warp and bow properties of the inp wafer.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (8)
1. A method for preparing an indium phosphide wafer is characterized by comprising the following operation steps:
s1, coating a layer of protective solution on the surface of the indium phosphide crystal, cutting the indium phosphide crystal into an indium phosphide wafer, and removing the protective solution after the cutting is finished;
s2, carrying out coarse grinding and fine grinding on the indium phosphide wafer processed in the step S1 in sequence, wherein the pressure of the coarse grinding is 0.1-0.5N/cm2The thickness after grinding is 20-30 μm; the pressure of the fine grinding is 0.01-0.05N/cm2The thickness after grinding is 5-7 μm;
s3, thinning the grinded indium phosphide wafer;
s4, carrying out chemical mechanical polishing on the thinned indium phosphide wafer by using polishing solution, wherein the polishing solution comprises an oxidant and an abrasive, and the chemical mechanical polishing comprises rough polishing and finish polishing in sequence;
and S5, cleaning the indium phosphide wafer after the chemical mechanical polishing to obtain the finished indium phosphide wafer.
2. The method for producing an indium phosphide wafer according to claim 1, characterized in that: in the step S2, the first polishing liquid is added during the rough polishing, and the second polishing liquid is added during the fine polishing.
3. The method for preparing an indium phosphide wafer according to claim 2, wherein the first grinding fluid comprises the following raw materials in parts by weight: 30-50 parts of first ground material, 5-10 parts of lubricant, 5-10 parts of dispersant and 50-70 parts of deionized water; the second grinding fluid comprises the following raw materials in parts by weight: 30-50 parts of second ground material, 5-10 parts of lubricant, 5-10 parts of dispersant and 50-70 parts of deionized water.
4. The method for producing an indium phosphide wafer according to claim 3, characterized in that: the first ground material in the step S2 is flake alumina, and the first ground material has a median particle diameter of 8.0 to 9.0 μm and a thickness of 1.5 to 2.0 μm.
5. The method for producing an indium phosphide wafer according to claim 3, characterized in that: the second ground material in step S2 is flake alumina, and the median particle size of the second ground material is 3.0 to 3.8 μm and the thickness is 0.9 to 1.4 μm.
6. The method for producing an indium phosphide wafer according to claim 3, characterized in that: the dispersing agent in the first grinding liquid and the second grinding liquid is at least one of sodium alkyl benzene sulfonate, oleoyl polypeptide, alkyl sulfate, fatty acid methyl ester sulfonate, polyether and polyethylene glycol fatty acid ester; and the lubricant in the first grinding liquid and the second grinding liquid is at least one of benzenediol, glycerol and triethanolamine.
7. The method for producing an indium phosphide wafer according to claim 1, characterized in that: in the step S3, during the thinning process, the wafer to be processed is fixed by vacuum adsorption, the thinning thickness is set to be 10-15 μm, and the rotation speed is set to be 1000-1500 rpm.
8. An indium phosphide wafer prepared by the preparation method as set forth in any one of claims 1 to 7.
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