CN114203924A - Functional device and method for manufacturing functional device - Google Patents

Functional device and method for manufacturing functional device Download PDF

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Publication number
CN114203924A
CN114203924A CN202110951603.XA CN202110951603A CN114203924A CN 114203924 A CN114203924 A CN 114203924A CN 202110951603 A CN202110951603 A CN 202110951603A CN 114203924 A CN114203924 A CN 114203924A
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CN
China
Prior art keywords
layer
lyophobic
functional
functional device
low
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CN202110951603.XA
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Chinese (zh)
Inventor
中谷修平
吉田英博
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8428Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention provides a functional device and a method of manufacturing the functional device. A functional device (100) is provided with: a bank (130) having a lyophobic section (132) and a low lyophobic section (134) having less lyophobicity than the lyophobic section (132) on a surface section (131); a 1 st functional layer (140) that is located in a region defined by the bank (130) and is in contact with the liquid-repellent section (132); and a 2 nd functional layer (150) that is in contact with the low lyophobic portion (134) and covers the 1 st functional layer (140).

Description

Functional device and method for manufacturing functional device
Technical Field
The present disclosure relates to a functional device and a method of manufacturing the functional device.
Background
In recent years, studies for forming various electronic devices by a printing method have been actively conducted. Since the printing method is a method of applying a necessary amount of ink only to a necessary position, the use efficiency of the material is high as compared with a method of vacuum deposition, sputtering, or the like.
Among printing methods, attention is paid to an ink jet method which can form a desired pattern as required without contacting a printing object.
Examples of electronic devices formed by a printing method include wiring using conductive ink, transistors using semiconductor ink, and display devices using light-emitting materials.
Patent document 1 discloses an organic EL device as an example of an electronic device. The bank included in the organic EL device of patent document 1 has relatively large liquid repellency to hold ink, which is a material of the hole transport layer and the organic light-emitting layer, in a region defined by the bank.
Prior art documents
Patent document
Patent document 1: japanese patent No. 4990415
Disclosure of Invention
A functional device according to an aspect of the present disclosure includes: a bank having a liquid-repellent section and a low liquid-repellent section having less liquid repellency than the liquid-repellent section on a surface portion; a 1 st functional layer located in a region defined by the bank and in contact with the liquid-repellent section; and a 2 nd functional layer which is in contact with the low lyophobic part and covers the 1 st functional layer.
A method for manufacturing a functional device according to an aspect of the present disclosure includes: forming banks on a substrate; forming a 1 st functional layer, the 1 st functional layer being located in a region defined by the bank and being in contact with a lyophobic portion of a surface portion of the bank; forming a low lyophobic portion on a portion of the surface portion, the low lyophobic portion having relatively less lyophobicity than the lyophobic portion; and a step of forming a 2 nd functional layer, the 2 nd functional layer being in contact with the low lyophobic portion and covering the 1 st functional layer.
Drawings
Fig. 1 is a sectional view showing the structure of the organic EL device disclosed in patent document 1.
Fig. 2 is a sectional view showing the configuration of a functional device according to an embodiment of the present disclosure.
Fig. 3 is a cross-sectional view showing an intermediate product according to the embodiment in a state where an electrode layer and a bank are formed on a substrate.
FIG. 4 is a view showing that the intermediate product according to the embodiment is irradiated with CF4Pattern of plasma.
Fig. 5 is a cross-sectional view showing an intermediate product according to the embodiment in a state where ink is stored in a light-emitting region.
Fig. 6 is a cross-sectional view showing an intermediate product according to an embodiment in a state where a light-emitting layer is formed.
FIG. 7 shows an intermediate product according to an embodiment irradiated with O through a shadow mask2Pattern of plasma.
Fig. 8 is a cross-sectional view showing an intermediate product according to the embodiment in a state where an electrode layer is formed.
Fig. 9A is a cross-sectional view showing the structure of a functional device according to modification 1 of the present disclosure.
Fig. 9B is a sectional view showing the structure of a functional device having another structure according to modification 1 of the present disclosure.
Fig. 10 is a cross-sectional view showing the structure of a functional device according to modification 2 of the present disclosure.
Fig. 11 is a cross-sectional view showing the structure of a functional device according to modification 3 of the present disclosure.
Fig. 12 is a cross-sectional view showing an intermediate product according to example 1 in a state where an electrode layer and banks are formed on a substrate.
Fig. 13 is a cross-sectional view showing the intermediate manufactured article according to example 1 in a state where a red light-emitting layer is formed.
FIG. 14 shows an intermediate product according to example 1 irradiated with O through a shadow mask2Pattern of plasma.
Fig. 15 is a sectional view showing the structure of a functional device according to embodiment 1.
Fig. 16 is a cross-sectional view showing an intermediate product according to example 2 in a state where an electrode layer and banks are formed on a substrate.
FIG. 17 is a view showing that the intermediate product according to example 2 is irradiated with CF4Pattern of plasma.
Fig. 18 is a cross-sectional view showing an intermediate manufactured article according to example 2 in a state where a red light-emitting layer is formed.
Fig. 19 is a sectional view showing an intermediate manufactured article in a state of being accommodated in a vacuum dryer.
Fig. 20 is a sectional view showing the structure of a functional device according to embodiment 2.
Description of the symbols
1 an organic EL device;
10 TFT panel;
12 an anode;
13 a hole injection layer;
14 a hole transport layer;
15 an organic light-emitting layer;
16 banks;
18 an electron injection layer;
20 a transparent cathode;
22 a transparent sealing film;
70 light;
100 functional devices;
a 110 substrate;
120 electrode layers;
121 a gate electrode layer;
122 a gate insulating layer;
130 banks;
131 surface portion;
132 a lyophobic part;
133 a surface of the lyophobic portion;
134 low lyophobic part;
135 surface of the low lyophobic portion;
136 of the inner portion;
140 functional layer 1;
141 a light-emitting layer;
141R red light emitting layer;
141G green light emitting layer;
141B blue light emitting layer;
41 ink;
41R red emitting ink;
41G red-green emitting ink;
41B blue light-emitting ink;
142 a hole injection layer;
143 a hole transport layer;
144 an electron injection layer;
145 an organic semiconductor layer;
150 a functional layer 2;
151 an electrode layer;
152 a source electrode;
153 a drain electrode;
156 a sealing layer;
157 a protective layer;
158 an inorganic layer;
210 vacuum dryer;
211 an accommodating part;
212 an exhaust pump;
310 CF4plasma;
320 O2plasma;
330 a shadow mask;
and 400 contact holes.
Detailed Description
In this specification, the term "functional device" is a general term for a device that outputs a function to be a target by utilizing a physical phenomenon. For example, as the functional device, an organic EL device, a quantum dot light emitting device, a color conversion filter device, an organic transistor device, a sensor device, and the like can be cited.
(technical background)
Since a functional material such as a light-emitting material and a conductive material, which are materials used for manufacturing a functional device, particularly a light-emitting device, is very expensive, it is preferable to minimize loss of the material.
The printing method is a method capable of applying a required amount of ink only at a required position, and therefore, the utilization efficiency of the material is high as compared with methods such as vacuum deposition and sputtering. Further, the printing method can form a film in the atmosphere rather than in a vacuum. Therefore, the printing method does not require energy consumed for the operation of the vacuum equipment, and is therefore preferable also from the viewpoint of reducing the operation energy. In the present specification, the ink refers to a material of a predetermined layer and is in a liquid state.
Examples of the printing method include screen printing, relief printing, gravure printing, and inkjet printing. In particular, attention is paid to an ink jet method, and development of a method for forming a display device such as a color filter, an organic EL display, and a quantum dot display by the ink jet method is actively carried out.
As next-generation displays, there are displays using quantum dot materials, which are inorganic materials, as light emitting layers. The development of such displays is being prevalent.
The quantum dots are special semiconductors having a very small size, specifically, a diameter of 2 to 10nm (in other words, about 10 to 50 atoms). Thus, a substance of a minute size differs from the properties shown in the case of a comparatively large size.
In the quantum dot, the size of the band gap can be controlled only by changing the particle diameter of the quantum. The emission wavelength of the quantum dot depends on the size of the band gap, and thus the emission wavelength of the quantum dot can be very finely adjusted. That is, the emission wavelength of the quantum dot can be changed by only changing the particle size of the quantum. More specifically, the smaller the quantum particle size, the more the emission wavelength of the quantum dot shifts to the blue side, and the larger the quantum particle size, the more the emission wavelength of the quantum dot shifts to the red side.
The half-value width of the emission wavelength is extremely small, and is several tens of nm or less. Since the half-value widths of the emission wavelengths of red, blue, and green are small, the emission wavelengths show high color gamut characteristics. As a result, the performance as a display device is significantly improved.
Quantum dots comprise a core, a layer called a shell formed around the core, and a ligand formed around the shell. Typical examples of the material of the core include inorganic materials such as cadmium selenium-based, indium phosphorus-based, copper indium sulfide-based, and silver indium sulfide-based materials, and inorganic materials having a perovskite structure. A representative material of the shell is zinc sulfide or the like.
The quantum dots achieve stability as an ink by forming ligands around the shell. The light emitting device formed of such a quantum dot material includes a photoluminescent device in which electrons of the quantum dot material are excited by optical energy to emit light, and an electroluminescent device in which electrons of the quantum dot material are excited by electric energy to emit light.
A photoluminescent device is used as a color filter of a micro LED display as an example of a quantum dot display.
An electroluminescent device is an example of a quantum dot display, and is used for a quantum dot display in which a quantum dot material is formed into a thin film between an anode and a cathode.
A quantum dot display using a photoluminescent device or an electroluminescent device has very high luminance and excellent visibility outdoors as compared with an organic EL display. Therefore, flexible applications to mobile phones, displays for in-vehicle use, head-mounted displays, and the like are expected. These displays are expected to require pixel resolutions above 200ppi (pixels per inch).
Light emitting materials forming light emitting devices such as photoluminescent devices and electroluminescent devices are deteriorated in light emitting performance under the influence of moisture in the atmosphere. Thus, in manufacturing these devices, it is necessary to form a sealing film after forming a light emitting layer. The sealing film is often formed of a silicon nitride film and a laminated film of an acrylic resin film, an epoxy resin film, or the like. The silicon nitride film is formed by a vacuum process such as CVD (Chemical Vapor Deposition). The laminated film is formed by an inkjet method.
For the following reasons (1) to (3), development of a method for forming a layer or a film by a coating process such as an ink-jet method is actively carried out for all functional devices without using a vacuum process.
(1) Loss of material
When a functional device is manufactured by a vacuum process such as vapor deposition, sputtering, or CVD, a large amount of material is consumed. The material of the film constituting the functional device is very expensive, and therefore, it is preferable to minimize the loss of the material.
(2) Cost of
Since the vacuum equipment has a high operation cost, the cost required for manufacturing a functional device becomes high in the case of using a vacuum process.
(3) Manufacture at low temperature
Development of a method for forming a functional device on a flexible substrate such as a plastic film is actively carried out. Since the flexible substrate has low heat resistance, when the flexible substrate is used as a substrate, it is necessary to manufacture a functional device at a low temperature.
For the purpose of improving the use efficiency of materials, reducing the manufacturing cost by manufacturing functional devices under atmospheric pressure, and manufacturing functional devices at a temperature to such an extent that a plastic film can withstand, studies for forming all layers of functional devices by a coating process are being conducted.
< problems of coating Process >
Fig. 1 is a cross-sectional view showing the structure of an organic EL device 1 (an example of a functional device) disclosed in patent document 1.
The organic EL device 1 includes a TFT panel 10, an anode 12, a hole injection layer 13, a hole transport layer 14, an organic light-emitting layer 15, banks 16, an electron injection layer 18, a transparent cathode 20, and a transparent sealing film 22.
In the manufacture of the organic EL device 1, the functional layer such as the organic light emitting layer 15 is formed by an ink jet method. Specifically, the organic EL device 1 is manufactured by the following process.
(1) An anode (electrode) 12 and a hole injection layer 13 are formed on the TFT panel 10.
(2) Banks 16 defining a pixel region are formed on the hole injection layer 13.
(3) The hole transport layer 14 and the organic light-emitting layer 15 are formed in the region defined by the bank 16 by an ink-jet method.
(4) The electron injection layer 18 and the transparent cathode 20 are formed on the organic light emitting layer 15 by a vacuum process.
(5) A transparent sealing film 22 is formed so as to cover the electron injection layer 18 and the transparent cathode 20.
The banks 16 need to have a liquid repellency of a certain value or more in order to retain ink, which is a material of the hole transport layer 14 and the organic light-emitting layer 15, in a predetermined region. Therefore, bank 16 has relatively large liquid repellency.
In the case of manufacturing an organic EL device including a bank having a large liquid repellency, if a functional layer such as a transparent cathode and a transparent sealing film is formed on the upper side of a light-emitting layer by a coating process such as an ink-jet method, uniformity of the film thickness of the functional layer is reduced.
Similarly, in the case of manufacturing an organic transistor device including banks having a large liquid repellency, if a functional layer such as a source electrode, a drain electrode, and a protective film is formed by a coating process such as an ink jet method, the uniformity of the film thickness of the functional layer is reduced.
If a film having high uniformity is not formed, the quality of a functional device such as an organic EL device or an organic transistor device is degraded.
For example, in the case where the transparent cathode 20 and the transparent sealing film 22 are formed by an inkjet method in manufacturing the organic EL device 1 having the structure shown in fig. 1, the film forming properties of the transparent cathode 20 and the transparent sealing film 22 are significantly reduced.
Specifically, since the banks 16 have relatively large liquid repellency, the coating film formed of ink is repelled by the banks 16, which reduces the uniformity of the film thicknesses of the transparent cathode 20 and the transparent sealing film 22 and reduces the coverage of the transparent sealing film 22.
In particular, when the uniformity of the film thickness of the transparent cathode 20 is reduced, the resistance value of the organic EL device 1 varies, and the electrical characteristics deteriorate. As a result, the light emission characteristics of the organic EL device 1 may be degraded. In addition, when the coverage of the transparent sealing film 22 is reduced, moisture or the like in the atmosphere enters the organic EL device 1 from a thin portion of the transparent sealing film 22, and adversely affects the organic light-emitting layer 15. As a result, the light emission characteristics of the organic EL device 1 are degraded with time.
Other functional devices are explained. When an organic transistor device includes a bank having a relatively large liquid repellency, ink applied to the functional layer on the bank is repelled when the functional layer such as a source electrode, a drain electrode, and a protective film is formed by an ink jet method. Thus, the uniformity of the functional layer is degraded. As a result, the quality of the organic transistor device is degraded.
In this way, when a functional device is formed by an ink jet method, the bank has relatively large liquid repellency, and the quality of the functional device may be degraded.
The functional device of the present disclosure can manufacture many functional layers of the functional device by a coating process while ensuring quality.
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
(embodiment mode)
Fig. 2 is a sectional view showing the configuration of the functional device 100 according to the embodiment of the present disclosure. The cross-sectional view in this specification is a cross-sectional view of the functional device 100 based on a vertical plane. In this embodiment, the functional device 100 is an organic EL device that emits light.
The functional device 100 includes a substrate 110, an electrode layer 120, banks 130, a 1 st functional layer 140, and a 2 nd functional layer 150. Although details will be described later, in the present embodiment, the 1 st functional layer 140 is composed of the light-emitting layer 141. In addition, the functional device 100 is a top emission structure in which light emitted from the light-emitting layer 141 is emitted from the upper side of the functional device 100 to the outside.
< substrate 110>
Various layers are laminated on one surface of the substrate 110. The material of the substrate 110 may be any material having insulating properties, and may be a transparent material or an opaque material. The substrate 110 may be a flexible resin sheet such as glass or polyimide.
< electrode layer 120>
In this embodiment mode, the electrode layer 120 is formed of a reflective electrode. The electrode layer 120 is formed on the substrate 110. The material of the electrode layer 120 is a metal material having high optical reflectivity, such as silver-palladium-copper alloy or aluminum. Therefore, the functional device 100 can efficiently emit light emitted from the light-emitting layer 141 to the outside of the functional device 100.
< Barrier 130>
The bank 130 is formed to cover a part of the electrode 102. Bank 130 defines a region where functional layer 1 140 is formed.
In general, bank 130 is formed to have relatively large liquid repellency in many cases. In addition, inks applied by an application process such as an inkjet method are often low in viscosity. The low viscosity of the ink liquid means that the concentration of the solid component contained in the ink liquid is low. That is, in order to dry the solvent of the ink and then form a layer having a thickness equal to or greater than a certain thickness, it is necessary to apply the ink in a corresponding amount.
For example, in the case of ink 41 (see fig. 5) to which light-emitting layer 141 is applied by an application process, it is necessary to store ink 41 in a region (hereinafter referred to as a light-emitting region) defined by bank 130 in order to use the applied ink for forming light-emitting layer 141. If the liquid repellency of bank 130 is relatively small, applied ink 41 may overflow from the light-emitting region. If the liquid repellency of bank 130 is relatively high, a necessary amount of ink 41 can be stored in the light-emitting region. Therefore, from the viewpoint of making the thickness of light-emitting layer 141 sufficiently thick, bank 130 preferably has a large liquid repellency, that is, a small wettability. Here, a small wettability means a large lyophobicity, and a large wettability means a small lyophobicity.
However, when the liquid repellency of bank 130 is relatively high and functional layer 2 150 covering bank 130 is formed by an application process such as an ink jet method or screen printing, the applied ink of functional layer 2 150 is repelled by bank 130. As a result, the uniformity of the 2 nd functional layer 150 is degraded. Therefore, in order to increase the uniformity of the 2 nd functional layer 150, which is a layer on the upper side of the light-emitting layer 141, the liquid repellency of the bank 130 is preferably small, that is, the wettability is preferably high.
Therefore, bank 130 of functional device 100 according to the embodiment of the present disclosure has a portion with large liquid repellency and a portion with small liquid repellency. Bank 130 will be described in detail below.
Bank 130 has surface portion 131 and inner portion 136. The surface portion 131 covers the interior portion 136 and a portion of the electrode layer 120.
The surface portion 131 has a lyophobic portion 132 and a low lyophobic portion 134. The lyophobic portion 132 is a portion of the surface portion 131 where the 1 st functional layer 140 is in contact. The low lyophobic portion 134 is a portion of the surface portion 131 other than the lyophobic portion 132, and is a portion where the 2 nd functional layer 150 meets.
The material of the lyophobic part 132 is a photosensitive resin material. The liquid-repellent portion 132 contains a fluorine compound as a liquid-repellent component. The material of the low lyophobic portion 134 is a photosensitive resin material, similarly to the lyophobic portion 132. The low lyophobic portion 134 may or may not contain a fluorine compound. Specifically, the photosensitive resin material is a resin material such as an acrylic resin, an epoxy resin, or a polyimide.
The concentration of fluorine atoms in the lyophobic parts 132 is higher than that of the fluorine atoms in the lower lyophobic parts 134. Specifically, the concentration of fluorine atoms in the lyophobic part 132 is 5 atom% or more and 10 atom% or less, and the concentration of fluorine atoms in the low lyophobic part 134 is 0 atom% or more and less than 5 atom%. The fluorine atom concentration can be measured by an X-ray photoelectron spectroscopy apparatus (also referred to as XPS or ESCA).
Thus, since the concentration of the lyophobic component in the low lyophobic portion 134 is lower than that in the lyophobic portion 132, the lyophobicity of the low lyophobic portion 134 is lower than that of the lyophobic portion 132.
The contact angle of the lyophobic parts 132 with respect to the ink of the 1 st functional layer 140 is 20 degrees or more and 70 degrees or less, and preferably 30 degrees or more and 60 degrees or less. The contact angle of the low lyophobic portion 134 with respect to the ink of the 2 nd functional layer 150 is 0 degree or more and 30 degrees or less, and preferably 0 degree or more and 20 degrees or less. Here, the contact angle is a value indicating wettability with respect to a liquid, and the wettability is smaller as the contact angle is larger, and the wettability is larger as the contact angle is smaller. The contact angle of the lyophobic portion 132 and the contact angle of the low lyophobic portion 134 are not contact angles with the same ink, but values with respect to inks containing different substances. Therefore, the functional device 100 according to the embodiment cannot be considered to have the low lyophobic portion 134 having a liquid repellency larger than that of the lyophobic portion 132.
The roughness of the surface 135 of the low lyophobic portion 134, which is the surface in contact with the 1 st functional layer 140, is larger than the roughness of the surface 133 of the lyophobic portion 132. The smaller the roughness, the smaller the coefficient of friction of the surface, and the larger the roughness, the larger the coefficient of friction of the surface.
The material of the inner portion 136 is a photosensitive resin material, specifically, a resin material such as acrylic resin, epoxy resin, or polyimide.
< 1 st functional layer 140>
The 1 st functional layer 140 is located in a region defined by the bank 130 on the electrode layer 120, and is in contact with the lyophobic part 132.
In the present embodiment, the 1 st functional layer 140 is composed of the light-emitting layer 141.
The light-emitting layer 141 includes a red light-emitting layer 141R that emits red light, a green light-emitting layer 141G that emits green light, and a blue light-emitting layer 141B that emits blue light.
The thickness of the light-emitting layer 141 is, for example, several 10 nm. The thickness of the light-emitting layer 141 varies depending on the type of material and the optical design of the device to be manufactured, but is generally 20nm to 100 nm.
The material of the light-emitting layer 141 is a fluorene-based polymer organic compound. The fluorene-based polymer organic compound is, for example, poly (9, 9-dioctylfluorene-alt-benzothiadiazole) (poly (9, 9-dioctyl fluoride-alt-benzothiazodiazole)), so-called F8 BT.
< 2 nd functional layer 150>
The 2 nd functional layer 150 is in contact with the low lyophobic parts 134 and covers the 1 st functional layer 140.
In the present embodiment, the 2 nd functional layer 150 is composed of the electrode layer 151 and the sealing layer 156.
The electrode layer 151 is formed of a transparent electrode. Electrode layer 151 is formed to cover a part of bank 130 and light-emitting layer 141. The material of the electrode layer 151 is Indium Tin Oxide (ITO). Since the electrode layer 151 has high optical transmittance, light emitted from the light-emitting layer 141 can be efficiently emitted to the outside of the functional device 100.
Sealing layer 156 is formed to cover at least a part of bank 130 and electrode layer 151. It goes without saying that the sealing layer 156 covers the light-emitting layer 141 located below the electrode layer 151. As shown in fig. 2, in the present embodiment, sealing layer 156 is formed as a so-called full coat layer so as to span a plurality of regions defined by banks 130.
The sealing layer 156 is made of a photosensitive resin material such as epoxy resin or acrylic resin.
The light-emitting layer 141 of the functional device 100 is easily deteriorated by the influence of moisture. The sealing layer 156 protects the light emitting layer 141 from moisture in the atmosphere.
Sealing layer 156 may cover only a part of bank 130 as long as it can protect light-emitting layer 141 from moisture in the atmosphere.
The materials of the layers and the banks 130 are examples, and are not limited to these materials.
< method for manufacturing functional device 100 >
A method for manufacturing the functional device 100 according to the present embodiment will be described with reference to fig. 2 to 8. In the following description, the entirety of the product formed during the production of the functional device 100 is referred to as an intermediate product. The method of manufacturing the functional device 100 includes steps S1 to S5 as follows.
First, the electrode layer 120 is formed on the substrate 110 (step S1). The electrode layer 120 is formed using a material such as aluminum or silver-palladium-copper alloy by a vacuum film formation method such as a sputtering method.
Next, bank 130 is formed to cover a part of electrode layer 120 (step S2). Step S2 includes step S21 of forming banks 130 having relatively small liquid repellency, and step S22 of forming liquid repellent sections 132 on surface sections 131 of the banks 130. Here, bank 130 having relatively small liquid repellency means bank 130 having no liquid repellent section 132 on surface 131 and having relatively small liquid repellency on inner portion 136.
In step S21, bank 130 having low liquid repellency is formed by photolithography using a photosensitive resin material. As described above, the photosensitive resin material is a resin material such as an acrylic resin, an epoxy resin, or a polyimide. Step S21 includes steps S211 to S214 described below.
First, a photosensitive resin material cured by exposure to ultraviolet light is applied on the substrate 110 by a spin coating method as an example of a coating process (step S211). The rotation speed in the spin coating method as a coating condition can be adjusted according to the height of bank 130 as needed.
Next, prebaking of the coating layer is performed by a hot plate or the like, and the coated material is dried to remove the solvent component (step S212). Then, exposure with ultraviolet light is performed through a photomask having a desired pattern formed thereon (step S213). Here, the photosensitive resin material includes a negative material cured in an exposed portion to which ultraviolet light is irradiated and a positive material cured in an unexposed portion to which ultraviolet light is not irradiated. The uncured portion is removed using a suitable developer according to the type of material. Then, the remaining pattern is subjected to main baking in a curing oven or the like (step S214). These steps S211 to S214 form banks 130 having relatively small liquid repellency. As a result, the intermediate product is in the state shown in fig. 3, and fig. 3 is a cross-sectional view showing the intermediate product in a state where electrode layer 120 and bank 130 having relatively small liquid repellency are formed on substrate 110. The intermediate product shown in fig. 3 has banks 130 having a relatively small liquid repellency.
Next, in the intermediate product of fig. 2, liquid repellent section 132 is formed on surface 131 of bank 130 (step S22). In this embodiment, in step S22, plasma irradiation is performed using a fluorocarbon gas. The fluorocarbon gas is, for example, carbon tetrafluoride (CF)4) And the like fluorine compounds. In the following description, the fluorocarbon gas is described as carbon tetrafluoride (CF)4). In this case, as shown in FIG. 4, by CF4The plasma 310 is irradiated with a fluorocarbon gas toward the surface portion 131. FIG. 4 is a view showing an intermediate artefact being irradiated with CF4A map of the plasma 310 behavior.
By being irradiated with fluorocarbon gas toward the surface portion 131, thereby being based on CF4The fluorine compound of the plasma 310 is introduced into the surface portion 131, and the liquid repellency of the surface portion 131 is increased. In other words, surface portion 131 of bank 130 has reduced wettability. Thereby, the lyophobic part 132 is formed on the surface part 131 (see fig. 4).
Next, the ink of the 1 st functional layer 140 is applied to the light emitting region, thereby forming the 1 st functional layer 140 which is located in the region defined by the bank 130 and is in contact with the lyophobic parts 132 of the surface part 131 of the bank 130 (step S3). In this embodiment, since the 1 st functional layer 140 is formed only of the light-emitting layer 141, step S3 includes only step S31 of forming the light-emitting layer 141. Step S31 includes the following steps S311 to S313.
An ink in which a high molecular compound and a low molecular compound having light-emitting characteristics are dissolved is applied to a light-emitting region by an ink jet method (step S311). The inks applied in step S311 are the ink 41R for the red light-emitting layer 141R, the ink 41G for the green light-emitting layer 141G, and the ink 41B for the blue light-emitting layer 141B.
In the ink 41, the polymer compound and the low-molecular compound are dispersed using an organic solvent as a dispersion medium. Here, the concentration of the high molecular compound and the low molecular compound with respect to the organic solvent (hereinafter, may be simply referred to as a solvent) is 0.5 weight percent or more and 10 weight percent or less.
Since the lyophobic parts 132 are located on the surface parts 131 of the banks 130, when the ink 41 is applied to the light-emitting regions, the ink 41 protrudes in the light-emitting regions as shown in fig. 5. Therefore, a relatively large amount of ink 41 can be stored in the light-emitting region. Fig. 5 is a cross-sectional view showing the intermediate product in a state where the ink 41 is stored in the light-emitting region.
After the ink 41 is applied, vacuum drying is performed on the substrate 110 to which the ink 41 is applied (step S312). The vacuum drying is performed by a vacuum dryer 210 (see fig. 19). The vacuum dryer 210 includes a housing 211 capable of housing the intermediate product, and an exhaust pump 212 for reducing the degree of vacuum in the housing 211.
Vacuum drying is a method of promoting evaporation of a solvent by reducing the pressure in the housing portion 211 housing the substrate 110 by the exhaust pump 212. In the ink 41 applied by the inkjet method, a solvent having a relatively high boiling point is often used in order to suppress drying of the solvent in the nozzle. Therefore, vacuum drying is often used to dry the resin early.
The vacuum drying conditions are, for example, several Pa for the container 211 to reach a vacuum degree and several tens of minutes for a holding time. However, since the conditions of the reaching vacuum degree and the holding time are different depending on the boiling point of the solvent contained in the ink 41 of the light-emitting layer 141, the conditions of the vacuum drying are not limited to the reaching vacuum degree of several Pa and the holding time of several tens of minutes.
After the vacuum drying is performed, the ink 41 is heated (step S313). Since step S313 may be performed as needed, step S31 may not include step S313.
As a result, as shown in fig. 6, light-emitting layers 141R, 141G, and 141B are formed, respectively. Fig. 6 is a diagram illustrating an intermediate manufactured product in a state where the light emitting layers 141R, 141G, and 141B are formed. The thickness of the light-emitting layers 141R, 141G, and 141B shown in fig. 6 is set to a thickness corresponding to the amount of the ink 41R, 41G, and 41B stored in the light-emitting regions.
Next, the low lyophobic portion 134 is formed on a part of the surface portion 131 (step S4). In the present embodiment, the concentration of the lyophobic component in a part of the lyophobic part 132 is reduced, and the low lyophobic part 134 is formed by the part.
Specifically, in step S4, as shown in fig. 7, oxygen (O) is used for a part of the surface portion 131 via the shadow mask 3302) Plasma irradiation is performed. FIG. 7 shows an intermediate product irradiated with O through a shadow mask 3302A map of the plasma 320 behavior. The reason why the shadow mask 330 is used is that O is not irradiated to the light-emitting layer 1412The plasma 320. The part of the surface portion 131 refers to a part of the lyophobic portion 132 occupying most of the surface portion 131 except for a part in contact with the light-emitting layer 141.
Is irradiated with O2The portion of the plasma 320 is ashed, and the fluorine compound is removed from the portion. Thereby, the surface portion 131 is irradiated with O2The concentration of fluorine atoms at the site of the plasma 320 decreases. I.e. is irradiated with O2The liquid repellency of the portion of the plasma 320 becomes small and the wettability becomes large. Thereby, as shown in fig. 7, O is irradiated to the lyophobic parts 132 occupying most of the surface part 1312Plasma with a plasma chamberThe portion 320 serves as the low lyophobic portion 134 (see fig. 7). Here, the lyophobic parts 132 are only the parts of the surface part 131 that are in contact with the light-emitting layer 141.
Further, by being irradiated with O2The plasma 320 so that the surface 135 of the low lyophobic portion 134 becomes rougher than the surface 133 of the lyophobic portion 132.
Next, the 2 nd functional layer 150 is formed in contact with the low lyophobic parts 134 and covering the light emitting layer 141 (step S5). In this embodiment, the step S5 includes a step S51 of forming the electrode layer 151 and a step S52 of forming the sealing layer 156.
In step S51, electrode layer 151 is formed to cover at least a part of bank 130 and light-emitting layer 141. Here, an ink in which nanoparticles of indium tin oxide are dispersed is applied by an inkjet method, a solvent of the applied ink is dried by a method such as vacuum drying, and the ink is heated at about 200 ℃. Fig. 8 is a diagram illustrating an intermediate manufactured product in a state where the electrode layer 151 is formed.
In step S51, the amount of ink applied is determined as: the thickness of the electrode layer 151 after drying the ink is a predetermined thickness.
In step S52, sealing layer 156 covering at least a part of bank 130 and electrode layer 151 is formed by applying ink of sealing layer 156. Step S52 includes steps S521 to S524.
First, an ink containing an epoxy resin material or an acrylic resin material is applied by an inkjet method (step S521).
After the ink is applied, the applied ink is left for a certain time (step S522). Thereby forming a layer. Next, the formed layer is leveled to make the thickness of the layer uniform (step S523).
Next, the homogenized layer is irradiated with ultraviolet light to cure the layer (step S524). In step S524, the wavelength of the ultraviolet light to be irradiated is about 350nm to 400 nm. In step S524, a metal halide lamp may be used, or an LED capable of emitting ultraviolet light of a single wavelength may be used. Of ultraviolet lightThe irradiation dose is, for example, 200mJ/cm2Above and 1000mJ/cm2The following.
Since the low lyophobic parts 134 are formed in the banks 130, the ink of the 2 nd functional layer 150 can be uniformly applied without being repelled by the banks 130 in step S5.
As a result of the execution of step S5, the functional device 100 shown in fig. 2 is completed.
As described above, according to the present embodiment, functional device 100 includes bank 130, and bank 130 includes lyophobic portion 132 and low lyophobic portion 134 having less lyophobicity than lyophobic portion 132 on surface 131. The 1 st functional layer 140 is in contact with the lyophobic parts 132, and the 2 nd functional layer 150 is in contact with the low lyophobic parts 134.
Therefore, when the 2 nd functional layer 150 covering the 1 st functional layer 140 is formed by the coating process, the ink of the 2 nd functional layer 150 is not repelled by the banks 130. Thus, the uniformity of the thickness of the layer of the 2 nd functional layer 150 can be ensured. Therefore, a degradation of the quality of the functional device 100 caused by a degradation of the uniformity of the 2 nd functional layer 150 can be prevented. As a result, even in the case where the 2 nd functional layer 150 is formed using a coating process, the high-quality functional device 100 can be manufactured. Therefore, the material of each layer can be used effectively, and high quality can be ensured.
Further, since the ink of the 2 nd functional layer 150 is not repelled by the banks 130, the 2 nd functional layer 150 can be easily formed without pinholes. Therefore, the coating property of the sealing layer 156 of the 2 nd functional layer 150 can be improved, and the penetration of moisture into the 1 st functional layer 140 due to the decrease in the coating property of the sealing layer 156 can be prevented. Thus, reliability of the functional device 100 over time can be ensured.
Further, since bank 130 has liquid-repellent section 132, a sufficient amount of ink of functional layer 1 140 can be stored in the region defined by bank 130 when functional layer 1 140 is formed. Thus, the 1 st functional layer 140 of a desired thickness is easily formed. Further, since it is not necessary to form the relatively high bank 130 for storing the ink of the 1 st functional layer 140, the 1 st functional layer 140 having a desired thickness can be easily formed without increasing the size of the functional device 100, and the quality of the functional device 100 can be ensured. Further, since it is not necessary to form relatively high bank 130, the risk of deterioration of the coverage of functional layer 2 150 is reduced.
By forming the 2 nd functional layer 150 using a coating process, the operating energy can be reduced as compared with the case of forming using a vacuum process, and therefore the cost required for manufacturing the functional device 100 can be reduced.
Further, since the functional device 100 can be manufactured at a lower temperature than in the vacuum process by forming the 2 nd functional layer 150 using the coating process, the functional device 100 can be manufactured using a substrate having low heat resistance, such as a glass substrate or a plastic substrate. Thus, a wider variety of functional devices 100 can be manufactured.
Further, the roughness of the surface 135 of the low lyophobic portion 134 is relatively large. More specifically, the roughness of the surface 135 of the low lyophobic part 134 is greater than the roughness of the surface 133 of the lyophobic part 132. Therefore, the adhesion of the 2 nd functional layer 150 formed in contact with the surface 135 of the low lyophobic portion 134 to the surface 135 is improved. This improves the sealing performance by the 2 nd functional layer 150, and therefore, it is possible to prevent moisture from entering the 1 st functional layer 140 from the outside, and to ensure reliability of the functional device 100 over time.
The inner part 136 of the bank 130 may be made of the same material as the liquid repellent section 132. That is, the interior 136 of the bank 130 may contain a fluorine compound as a liquid-repellent component. In this case, the liquid-repellency of the inner portion 136 is relatively high. In step S21, bank 130 is formed using an ink containing an acrylic resin material containing a fluorine compound. In step S21, when ink containing an acrylic resin material containing a fluorine compound is used, bank 130 formed by executing step S21 is in a state in which the entire range of surface 131 is occupied by lyophobic sections 132. That is, the lyophobic part 132 is already formed on the surface part 131. Thus, in the case where the ink including the fluorine compound-containing acrylic resin material is used in step S21, step S2 does not include step S22.
Furthermore, in an embodiment, the functional device 100 may not necessarily have a top emission configuration.
(modification 1)
Next, modification 1 will be mainly described with reference to fig. 9A, which is different from the above-described embodiment. Fig. 9A is a cross-sectional view of a functional device 100 according to modification 1.
The sealing layer 156 included in the functional device 100 according to modification 1 is divided for each region defined by the bank 130. Among the layers constituting the functional device 100, the sealing layer 156 is a portion occupying most of the thickness of the layer. Therefore, when a deformation stress (for example, a bending stress) is applied to the functional device 100, the stress applied to the sealing layer 156 increases, and the sealing layer 156 may break. However, if the sealing layer 156 is separated as in the functional device 100 according to modification 1, a stress is exerted in this place, and the breakage of the sealing layer 156 can be suppressed.
In step S521 of the method for manufacturing functional device 100 according to modification 1, the ink of sealing layer 156 is applied to a region corresponding to the light-emitting region on part of bank 130 and electrode layer 151. In other respects, the method for manufacturing the functional device 100 according to modification 1 is the same as the method for manufacturing the functional device 100 according to the embodiment.
According to the functional device 100 according to modification 1, the same effects as those of the functional device 100 according to the embodiment can be obtained.
In modification 1, as shown in fig. 9B, the 2 nd functional layer 150 may include an inorganic layer 158 on the sealing layer 156 in addition to the electrode layer 151 and the sealing layer 156. More specifically, sealing layers 156 and inorganic layers 158 may be alternately stacked on electrode layer 151 and bank 130. Here, when the combination of the sealing layer 156 and the inorganic layer 158 is set to one pair, the 2 nd functional layer 150 may include the combination of N pairs. N is an integer of 1 or more. The sealing layer 156 and the inorganic layer 158 are thinner in the layer above the bank 130 than in the layer above the light-emitting layer 141.
The material of the inorganic layer 158 is an inorganic compound.
As shown in fig. 9B, when the functional device 100 includes the inorganic layer 158, step S52 includes step S525 in addition to steps S521 to S524. Step S525 is a step of forming the inorganic layer 158 on the sealing layer 156 by an inkjet method. Further, the operation of forming the sealing layer 156 on the inorganic layer 158 and forming the inorganic layer 158 on the formed sealing layer 156 is performed until N pairs of the sealing layer 156 and the inorganic layer 158 are formed.
As shown in fig. 9B, when the 2 nd functional layer 150 includes the inorganic layer 158, the moisture permeability of the 2 nd functional layer 150 can be reduced. Thus, the reliability of the functional device 100 over time can be ensured more reliably.
In addition, as shown in fig. 9B, when the 2 nd functional layer 150 includes a plurality of pairs of the sealing layer 156 and the inorganic layer 158, the sealing layer does not need to be divided for each region defined by the bank 130, and may be connected.
(modification 2)
Next, modification 2 will be mainly described about differences from the above-described embodiment with reference to fig. 10. Fig. 10 is a sectional view of a functional device 100 according to modification 2.
The functional device 100 according to modification 2 has the functional layer 140 of the 1 st layer including the light-emitting layer 141, the hole injection layer 142, the hole transport layer 143, and the electron injection layer 144.
< hole injection layer 142>
The hole injection layer 142 is located on the electrode layer 120. The hole injection layer 142 is a layer that injects holes into the light-emitting layer 141. The material of the hole injection layer 142 is an organic material such as a polythiophene-based material. Specifically, the material of the hole injection layer 142 is poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonate) (poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonate)), the so-called PEDOT: PSS. PEDOT: PSS is conductive polymer material.
< hole transport layer 143>
A hole transport layer 143 is formed on the hole injection layer 142 to cover the hole injection layer 142. The hole transport layer 143 is a layer that transports holes injected from the hole injection layer 142 to the light emitting layer 141. Further, the hole transport layer 143 is also a layer for preventing electrons injected from the electron injection layer 144 from entering the hole injection layer 142. The material of the hole transport layer 143 is, for example, poly (9, 9-dioctylfluorene-co-N- (4-butylphenyl) -diphenylamine) (poly (9, 9-dioctyl fluoride-co-N- (4-butyl phenyl) -diphenylamine)), so-called TFB.
< Electron injection layer 144>
The electron injection layer 144 is formed to cover the light emitting layer 141. The material of the electron injection layer 144 is a transparent oxide semiconductor such as zinc oxide.
Next, a method for manufacturing the functional device 100 according to modification 2 will be described.
Step S3 includes steps S301, S302, and S321 in addition to step S31 described above. Step S301 is a step of forming the hole injection layer 142 in the light-emitting region after completion of step S2. Step S302 is a step of forming the hole transport layer 143 so as to cover the hole injection layer 142 after step S301 is completed. Step S321 is a step of forming the electron injection layer 144 so as to cover the light emitting layer 141 after step S31 is completed.
In steps S301, S302, and S321, the ink of each layer is applied to the light-emitting region, the solvent of the applied ink is dried by a method such as vacuum drying, and the substrate 110 is heated as necessary. Thereby, the hole injection layer 142, the hole transport layer 143, and the electron injection layer 144 are formed.
In modification 2, in step S4, O is irradiated through the shadow mask 3302 Plasma 320, thereby preventing the light-emitting layer 141, the hole injection layer 142, the hole transport layer 143, and the electron injection layer 144 from being irradiated with O2The plasma 320.
Except for this, the method for manufacturing the functional device 100 according to modification 2 is the same as the method for manufacturing the functional device 100 according to the embodiment. In modification 2, by executing step S4, the portions of the surface portion 131 other than the portions in contact with the light-emitting layer 141, the hole injection layer 142, the hole transport layer 143, and the electron injection layer 144 become the low lyophobic portions 134.
According to the functional device 100 according to modification 2, the same effects as those of the functional device 100 according to the embodiment can be obtained.
(modification 3)
Next, modification 3 will be mainly described about differences from the above-described embodiment with reference to fig. 11. Fig. 11 is a sectional view of a functional device 100 according to modification 3.
The functional device 100 according to modification 3 is an organic transistor device. The functional device 100 shown in fig. 11 is an organic transistor device having a bottom gate configuration and a top contact configuration.
The electrode layer 120 of the functional device 100 is composed of a gate electrode layer 121 and a gate insulating layer 122. Furthermore, the 1 st functional layer 140 of the functional device 100 is formed by an organic semiconductor layer 145. The 2 nd functional layer 150 includes an electrode layer 151 and a protective layer 157, and the electrode layer 151 includes a source electrode 152 and a drain electrode 153.
< Gate electrode layer 121>
The gate electrode layer 121 is located on the substrate 110, and the material of the gate electrode layer 121 is, for example, molybdenum.
< Gate insulating layer 122>
The gate insulating layer 122 is a layer covering the gate electrode layer 121, and the material of the gate insulating layer 122 is, for example, an olefin polymer.
< organic semiconductor layer 145>
The organic semiconductor layer 145 covers the gate insulating layer 122 and is located in a region defined by the bank 130 in contact with the lyophobic section 132. The material of the organic semiconductor layer 145 is pentacene. The material of the organic semiconductor layer 145 may be, in addition to pentacene, a low molecular organic semiconductor material such as tetracene and phthalocyanine compounds, a high molecular organic semiconductor material such as polythiophene and polystyrene, a carbon nanotube, or the like.
< Source electrode 152 and Drain electrode 153>
The source electrode 152 and the drain electrode 153 are electrodes for forming a channel. Source electrode 152 and drain electrode 153 are located directly above organic semiconductor layer 145 so as to cover at least a portion of bank 130 and organic semiconductor layer 145. The source electrode 152 and the drain electrode 153 are disposed to face each other with a predetermined distance (for example, several μm) therebetween. In addition, carriers flow between the source electrode 152 and the drain electrode 153, so that the functional device 100 exhibits semiconductor characteristics. In order to ensure a long carrier path, the source electrode 152 and the drain electrode 153 may be formed in a comb-tooth shape. The source electrode 152 and the drain electrode 153 are made of gold, for example.
In the organic transistor device having the top-contact structure as in modification 3, since the source electrode 152 and the drain electrode 153 are disposed directly above the organic semiconductor layer 145, stable semiconductor characteristics are exhibited.
The protective layer 157 covers at least a portion of the bank 130, the source electrode 152, the drain electrode 153, and the organic semiconductor layer 145. The protective layer 157 has a contact hole 400 formed therein. The contact hole 400 penetrates the protective layer 157 from the end of the protective layer 157 on the side farthest from the substrate 110 to the drain electrode 153. By forming the contact hole 400, the drain electrode 153 can be electrically connected to an electrode of another functional device. Thus, for example, the drain electrode 153 of the functional device 100 according to modification 3 and the electrode of the organic EL device can be electrically connected, and light emission of the organic EL device can be controlled by the functional device 100 according to modification 3.
In modification 3, inner part 136 of bank 130 is made of the same material as liquid repellent section 132. The material of inner portion 136 of bank 130 and liquid repellent portion 132 contains a photosensitive resin material and a fluorine compound as a liquid repellent component. Thus, the liquid repellency of the inner portion 136 is relatively high.
< method for manufacturing functional device 100 >
The method of manufacturing the functional device 100 according to modification 3 includes the steps S1 to S5 described above, but differs in the content of the difference between the organic EL device and the organic transistor device and the difference between the materials constituting the inner portion 136.
In step S1 of modification 3, the gate electrode layer 121 is formed by forming a layer over the substrate 110 by sputtering using molybdenum as a material and patterning the layer into a desired pattern by photolithography. Further, a layer of an olefin polymer is applied to the substrate 110 and the gate electrode layer 121 by a spin coating method, and the layer is heated to form the gate insulating layer 122.
Step S2 of modification 3 is the same as step S2 of the embodiment except that bank 130 having relatively large liquid repellency is formed using ink containing a photosensitive acrylic resin material containing a fluorine compound and step S22 is not included.
In step S3 of modification 3, an ink produced by dissolving pentacene in an organic solvent is applied to a region defined by bank 130 by an inkjet method, and vacuum drying and heating treatment are performed on the applied ink to form organic semiconductor layer 145.
Step S4 of modification 3 is the same as step S4 of the embodiment.
In step S5 of modification 3, first, the source electrode 152 and the drain electrode 153 are formed in contact with the low liquid-repellent region 134 so as to cover the organic semiconductor layer 145. More specifically, an ink in which gold nanoparticles are dispersed is applied to a part of the low liquid-repellent portion 134 and the organic semiconductor layer 145 by an ink jet method, thereby forming the source electrode 152 and the drain electrode 153. Here, the source electrode 152 and the drain electrode 153 are formed to face each other with a predetermined distance therebetween. Next, a protective layer 157 covering the source electrode 152, the drain electrode 153, and the low lyophobic portion 134 is formed. Next, a contact hole 400 for exposing the drain electrode 153 is formed in the protective layer 157.
According to the functional device 100 according to modification 3, the same effects as those of the functional device 100 according to the embodiment can be obtained.
In addition, the contact hole 400 may not be formed in the protective layer 157. In this case, in step S5, the contact hole 400 is not formed.
(other modification example)
The liquid-repellent component may be a compound containing a fluorine atom or a silicon atom. That is, a silicon compound may be used as the liquid-repellent component instead of the fluorine compound. In this case, the concentration of silicon atoms in the lyophobic parts 132 is higher than the concentration of silicon atoms in the low lyophobic parts 134. Specifically, the concentration of silicon atoms in the lyophobic parts 132 is 5 atom% or more and 10 atom% or less, and the concentration of silicon atoms in the low lyophobic parts 134 is 0 atom% or more and less than 5 atom%. When a silicon compound is used as the lyophobic component instead of the fluorine compound, the contact angle of the lyophobic part 132 with respect to the ink of the 1 st functional layer 140 is 20 degrees or more and 70 degrees or less, preferably 30 degrees or more and 60 degrees or less. In the same case, the contact angle of the low liquid-repellent portion 134 with respect to the ink of the 2 nd functional layer 150 is 0 degrees or more and 30 degrees or less, and preferably 0 degrees or more and 20 degrees or less.
Even in the case where the liquid-repellent component contained in the liquid-repellent portion 132 and the low liquid-repellent portion 134 is a silicon compound, the same effect as that in the case where the liquid-repellent component is a fluorine compound can be obtained.
In step S4, the concentration of the lyophobic component contained in the lyophobic part 132 may be reduced so that the low lyophobic part 134 may be formed by a part of the lyophobic part 132, and the following processes (a) to (C) may be performed instead of the plasma irradiation.
(A) In step S4, substrate 110 having banks 130 and functional layer 1 140 formed thereon may be accommodated in accommodating unit 211 of vacuum dryer 210 (see fig. 19), and the degree of vacuum in accommodating unit 211 may be reduced while heating banks 130. For example, the vacuum degree of the housing portion 211 is reduced to 10 Pa.
CF4The fluorine compound generated by the plasma 310 is bonded to the carbon atoms of the surface portion 131 and introduced into the surface portion 131. By CF4The fluorine compound introduced into surface portion 131 of bank 130 by plasma 310 is weakly bonded to the carbon atoms of surface portion 131, and is unstable. Thus, the fluorine compound is released from the surface portion 131 (lyophobic portion 132) with time. This detachment phenomenon can be accelerated by heating bank 130 and reducing the pressure of the atmosphere around bank 130.
(B) In step S4, ultraviolet light may be irradiated to a part of the liquid-repellent section 132.
(C) In step S4, part of lyophobic section 132 may be cut away to expose inner part 136 of bank 130. Thus, inner portion 136 having low liquid repellency is located on surface portion 131 of bank 130, and a portion having low liquid repellency is formed on surface portion 131. That is, the low lyophobic portion 134 is formed on the surface portion 131.
When a part of the lyophobic part 132 is shaved, blasting, mechanical polishing, or the like may be performed.
In step S4, when either of the processes (B) and (C) is performed, the roughness of the surface 135 of the low lyophobic parts 134 is larger than the roughness of the surface 133 of the lyophobic parts 132. In particular, the surface roughness is greatly changed by the treatment (C). Therefore, since the adhesion of the 2 nd functional layer 150 to the surface 135 is improved and the sealing property by the 2 nd functional layer 150 is improved, the penetration of moisture from the outside can be prevented, and the reliability of the functional device 100 over time can be ensured.
In step S4, the processes (a) and (C) are performed on the assumption that the liquid repellency of the interior 136 of bank 130 is relatively small. As in the embodiment, when an ink containing a resin material that does not contain a lyophobic component such as a fluorine compound or a silicon compound is used as the material of bank 130 in step S21, the lyophobic property of inner portion 136 of bank 130 becomes relatively small.
In step S4, the plasma irradiation or the ultraviolet irradiation may be performed at a low intensity to the extent that the 1 st functional layer 140 is not damaged. In this case, the process of step S4 is performed without using the shadow mask 330.
In step S211, the photosensitive resin material may be applied by slit coating as another application process. In this case, the scanning speed of slit coating as the coating condition is adjusted according to the height of bank 130 as necessary.
CF may be irradiated on surface 131 of bank 1304Before plasma 310, O is used2The electrode layer 120 is ashed by plasma or atmospheric pressure plasma. The advantage of ashing the electrode layer 120 is the following 2 points.
(I) In use of O2When ashing is performed by plasma or atmospheric plasma, carbon atoms on the electrode layer 120 are extremely small. CF (compact flash)4The fluorine compound generated by the plasma 310 is bonded to the carbon atoms of the surface portion 131 and introduced into the surface portion 131. Therefore, by ashing the electrode layer 120, the fluorine compound is less likely to be introduced into the electrode layerConversely, the surface of electrode layer 120 is easily introduced into surface 131 of bank 130 made of a resin material.
(II) when a fluorine compound is introduced into the surface of the electrode layer 120, the liquid repellency of the surface of the electrode layer 120 increases, and the ink of the 1 st functional layer 140 is repelled when applied to the surface of the electrode layer 120, so that the light-emitting layer 141 with high uniformity cannot be formed. In other words, by ashing the electrode layer 120, the number of carbon atoms on the surface of the electrode layer 120 is reduced in advance, and CF is performed4Even when the plasma 310 is irradiated, the increase in the liquid repellency of the surface of the electrode layer 120 can be suppressed, and therefore the 1 st functional layer 140 having high uniformity can be formed.
The functional device 100 may also be a quantum dot light emitting device. In this case, the material of the light-emitting layer 141 is an inorganic compound in which a cadmium-selenium compound is quantum dots, or the like. The quantum dot material emits light of a different color depending on the particle diameter, and emits light of a red color as the particle diameter increases. Therefore, the inks 41R, 41G, and 41B of the red, green, and blue light-emitting layers 141R, 141G, and 141B respectively include materials (i.e., quantum dot materials) having different particle diameters.
In step S311, the ink 41 in which the inorganic compound in a quantum dot state is dispersed is applied by an application process such as an inkjet method. Here, the ink 41 includes an inorganic material of cadmium selenium system or the like. These inks 41 are prepared by dispersing a cadmium-selenium-based inorganic material or the like in an organic solvent as a dispersion medium, and the concentration of the material is 0.5 weight% or more and 10 weight% or less.
As the ink 41 of the light-emitting layer 141, an ink in which any of indium phosphorus-based, copper indium sulfide-based, silver indium sulfide-based, and other materials, inorganic materials having a perovskite structure, and the like are dispersed may be used.
Further, the functional device 100 may be a color conversion filter device that converts a luminescent color. In this case, the 1 st functional layer 140 of the functional device 100 comprises a layer formed of a quantum dot material. The layer formed of the quantum dot material can be formed by an inkjet method.
Furthermore, the functional device 100 may also be a sensing device. In this case, the 1 st functional layer 140 of the functional device 100 comprises a layer formed of a piezoelectric material. It goes without saying that when the functional device 100 is a sensor device, the functional device 100 has the electrode layer 151 functioning as an electrode. The electrode layer 151 and the layer formed of a piezoelectric material can be formed by an inkjet method.
In the embodiment, modification 1, and modification 2, a thin film may be formed over the electrode layer 151 using silicon nitride, and then the sealing layer 156 may be formed.
The 1 st functional layer 140 is not limited to the layers shown in the embodiment and the modifications 1 to 3, and may include one or more layers selected from the light-emitting layer 141, the hole injection layer 142, the hole transport layer 143, the electron injection layer 144, and the organic semiconductor layer 145.
The 2 nd functional layer 150 is not limited to the layers shown in the embodiment and the modifications 1 to 3, and may include one or more layers among the electrode layer 151, the sealing layer 156, and the protective layer 157.
(example 1)
The inventors manufactured a functional device 100 as an organic EL device by any of the manufacturing methods of the above-described embodiment and modifications 1 to 3 and other modifications. Hereinafter, the production of the functional device 100 (i.e., the organic EL device) will be described with reference to fig. 12 to 15.
First, AGC glass having a thickness of 0.5mm was prepared as the substrate 110. Then, the electrode layer 120 is formed by forming a layer on the substrate 110 by sputtering using a silver-palladium-copper alloy as a material and patterning the layer into a desired pattern by photolithography.
Next, an ink containing a photosensitive acrylic resin material containing a fluorine compound and made of AGC is applied on the substrate 110 by a spin coating method, the applied ink is prebaked at 100 ℃ to form a layer, ultraviolet light having a wavelength of 365nm is irradiated to the layer to form a rectangular pattern, and then main baking is performed. Thereby, bank 130 is formed. In example 1, bank 130 was formed so that the height became 1 μm. As a result, an intermediate product shown in fig. 12 is formed. Fig. 12 is a cross-sectional view showing an intermediate product in a state where electrode layer 120 and bank 130 are formed on substrate 110.
In the intermediate product shown in fig. 12, fluorine compounds segregate on surface 131 of bank 130. The surface portion 131 has a large liquid repellency and a small wettability. That is, it can be said that the surface portion 131 is occupied by the lyophobic portion 132. The contact angle of the lyophobic parts 132 of the banks 130 with respect to the ink 41R is 20 degrees or more and 70 degrees or less, and preferably 30 degrees or more and 60 degrees or less. The liquid repellency of the inner portion 136 is relatively high.
Next, ink 41R, which is a material of red light-emitting layer 141R, is applied by an ink jet method to light-emitting regions which are regions defined by banks 130.
Then, the intermediate product was dried by vacuum drying. More specifically, the pressure of the atmosphere surrounding the ink 41R is reduced to dry the solvent of the applied ink 41R. As a result, as shown in fig. 13, the red light-emitting layer 141R is formed. Fig. 13 is a sectional view showing the intermediate manufactured article in a state where the red light emitting layer 141R is formed.
FIG. 14 shows an intermediate product irradiated with O through a shadow mask2Pattern of plasma.
After red light-emitting layer 141R is formed, bank 130 is irradiated with O2The plasma 320. At this time, O is irradiated through the shadow mask 3302 Plasma 320 so that the red light emitting layer 141R is not irradiated with O2The plasma 320. By this treatment, the fluorine compound is removed from surface portions 131 of banks 130 not in contact with red light-emitting layer 141R, and the density of fluorine atoms present is reduced and the concentration of fluorine atoms is reduced as compared with surface portions 131 of banks 130 in contact with red light-emitting layer 141R. As a result, as shown in fig. 14, a portion of the lyophobic section 132 not in contact with the red light emitting layer 141R becomes the low lyophobic section 134. The lyophobic portion 132 is only a portion of the surface portion 131 that contacts the red light emitting layer 141R. The contact angle of the low lyophobic parts 134 with respect to the ink of the 2 nd functional layer 150 is 0 degree or more and 30 degrees or less, and preferably 0 degree or more and 20 degrees or less.
Next, an ink in which nanoparticles of Indium Tin Oxide (ITO) are dispersed is applied to a part of banks 130 and red light-emitting layer 141R by an ink jet method, and the solvent of the applied ink is evaporated by vacuum drying, thereby heating the ink at about 200 ℃. This forms electrode layer 151 covering at least a part of bank 130 and red light-emitting layer 141R.
Next, ink containing a photosensitive acrylic resin material (i.e., ink of sealing layer 156) is applied to a part of bank 130 and electrode layer 151 by an inkjet method. The height (i.e., thickness) of the ink when applied is about 4 μm. Then, the irradiation time was adjusted so that the dose became 1000mJ/cm by using an LED lamp2Ultraviolet light having a wavelength of 395nm is irradiated to the ink of the sealing layer 156 to cure the acrylic resin material. As a result, the sealing layer 156 is formed, and as shown in fig. 15, the functional device 100 as an organic EL device is completed. Fig. 15 is a sectional view showing the configuration of the functional device 100 according to embodiment 1.
By setting the device structure of the functional device 100 to the device structure described in any of the above-described embodiment, and modifications 1 to 3 and other modifications, the electrode layer 151 and the sealing layer 156 having high uniformity are formed by an inkjet method.
Therefore, it can be said that the quality of the manufactured functional device 100 can be ensured even when not only the 1 st functional layer 140 but also the 2 nd functional layer 150 is formed by the coating process. Further, it can be said that the cost required for manufacturing the functional device 100 can be reduced as compared with the case of forming by a vacuum process, and the functional device 100 can be manufactured at a relatively low temperature. The functional device 100 can be manufactured at a low temperature, which means that a substrate having low heat resistance, such as a glass substrate or a plastic substrate, can be used as the substrate 110, and thus the substrate 110 can be made flexible.
(example 2)
The inventors manufactured a functional device 100 as an organic EL device by a method different from example 1 among the manufacturing methods of any of the above-described embodiment and modifications 1 to 3 and other modifications. Hereinafter, referring to fig. 16 to 20, the manufacturing of the functional device 100 (i.e., the organic EL device) will be mainly described as different from embodiment 1.
First, a substrate 110 is prepared, and an electrode layer 120 is formed on the substrate 110.
Next, an ink containing a photosensitive acrylic resin material made of commodity chemicals was applied onto the substrate 110 by a spin coating method, the applied ink was prebaked at 100 ℃ to form a layer, ultraviolet light having a wavelength of 365nm was irradiated to the layer to form a rectangular pattern, and main baking was further performed. Thereby, bank 130 is formed. In example 2, bank 130 was formed so that the height became 1 μm. As a result, an intermediate product shown in fig. 16 is formed. Fig. 16 is a cross-sectional view showing an intermediate product in a state where electrode layer 120 and bank 130 are formed on substrate 110.
The ink for forming banks 130 mainly contains an acrylic resin material, and banks 130 formed have relatively low liquid repellency in both surface portion 131 and inner portion 136.
Next, bank 130 is irradiated with O2The plasma 320. Then, CF4The plasma 310 is irradiated to the bank 130, and a fluorine compound is introduced into the surface portion 131 of the bank 130. FIG. 17 is a view showing that the intermediate manufactured article is irradiated with CF4A map of the plasma 310 behavior. By CF4The irradiation of plasma 310 increases the concentration of fluorine atoms in surface portion 131, and increases the liquid repellency of most of surface portion 131. That is, as shown in fig. 17, the lyophobic portion 132 is formed on the surface portion 131.
Next, ink 41R as a material of red light-emitting layer 141R is applied by an ink jet method to light-emitting regions which are regions defined by banks 130, and the applied ink 41R is vacuum-dried. As a result, as shown in fig. 18, the red light-emitting layer 141R is formed. Fig. 18 is a sectional view showing the intermediate manufactured article in a state where the red light emitting layer 141R is formed.
Next, as shown in fig. 19, the intermediate product of fig. 17 is stored in the storage section 211 of the vacuum dryer 210. Fig. 19 is a sectional view showing an intermediate manufactured article in a state of being accommodated in the vacuum dryer 210. The vacuum dryer 210 includes a housing 211 and an exhaust pump 212.
After the intermediate product is accommodated in accommodating unit 211, the air in accommodating unit 211 is exhausted by exhaust pump 212, so that the degree of vacuum of accommodating unit 211 is reduced, and bank 130 is heated at 60 degrees.
CF4The fluorine compound generated by the plasma 310 is bonded to the carbon atoms of the surface portion 131 and introduced into the surface portion 131. By CF4The fluorine compound introduced into surface portion 131 of bank 130 by plasma 310 is weakly bonded to the carbon atoms of surface portion 131, and is unstable. Thus, the fluorine compound is released from the surface portion 131 (lyophobic portion 132) with time. This detachment phenomenon is accelerated by heating bank 130 and reducing the pressure of the atmosphere around bank 130.
This removes the fluorine compound from the portion of the lyophobic section 132 not in contact with the red light-emitting layer 141R, and the density of fluorine atoms present in this portion decreases. Therefore, the liquid repellency of the portion is reduced, and the wettability is increased. That is, as shown in fig. 19, the portion of the surface portion 131 serves as the low lyophobic portion 134.
On the other hand, the fluorine compound is not removed from the portion of the lyophobic portion 132 in contact with the red light-emitting layer 141R.
Next, the electrode layer 151 and the sealing layer 156 were formed in the same manner as in example 1. As a result, as shown in fig. 20, the functional device 100 as an organic EL device is completed. Fig. 20 is a sectional view showing the structure of a functional device according to embodiment 2.
Therefore, by setting the device structure of the functional device 100 to any of the device structures of the above-described embodiment, and modifications 1 to 3 and other modifications, the electrode layer 151 and the sealing layer 156 having high uniformity are formed by an inkjet method.
Therefore, it can be said that the quality of the manufactured functional device 100 can be ensured even when not only the 1 st functional layer 140 but also the 2 nd functional layer 150 is formed by the coating process. Further, it can be said that the functional device 100 can be manufactured at low cost and at a comparatively low temperature as compared with the case of being formed by a vacuum process. The functional device 100 can be manufactured at a low temperature, which means that the substrate 110 can be made flexible.
(example 3)
The inventors manufactured a functional device 100 as a quantum dot light emitting device by any of the manufacturing methods of the above-described embodiment and modifications 1 to 3 and other modifications. Hereinafter, the manufacturing of the functional device 100 (i.e., the quantum dot light emitting device) will be mainly described as a point different from embodiment 1.
As the quantum dot light-emitting material, a cadmium-selenium-based inorganic compound having a particle diameter of several 10nm is used.
In the manufacture of a quantum dot light-emitting device, an ink in which an inorganic compound of cadmium selenium is dispersed in an aromatic organic solvent and which has a particle diameter of several 10nm is applied to a light-emitting region by an ink jet method to form a light-emitting layer.
In addition, a functional device 100 as a quantum dot light emitting device was formed by the same manufacturing process as in example 1 except for dots made of a different material for the light emitting layer 141.
Thus, according to any of the above-described embodiment and modifications 1 to 3 and other modifications, not only the organic EL device but also the quantum dot light emitting device can be manufactured in the same manner.
(example 4)
The inventors manufactured a functional device 100 as an organic transistor device by any of the manufacturing methods of the above-described embodiment and modifications 1 to 3 and other modifications.
First, AGC glass having a thickness of 0.5mm was prepared as the substrate 110. Then, a layer is formed over the substrate 110 using molybdenum as a material and a sputtering method, and the layer is patterned into a desired pattern by photolithography, thereby forming the gate electrode layer 121.
Next, a layer was formed by applying an olefin polymer to the substrate 110 and the gate electrode layer 121 by a spin coating method, and the layer was heated at 130 degrees to be cured. Thereby, the gate insulating layer 122 covering the gate electrode layer 121 is formed.
Next, an ink containing a photosensitive acrylic resin material containing a fluorine compound and made of AGC is applied to the substrate 110, the applied ink is prebaked at 100 ℃ to form a layer, ultraviolet light having a wavelength of 365nm is irradiated to the layer to form a rectangular pattern, and main baking is performed. Thereby, bank 130 is formed. In example 4, bank 130 was formed so that the height became 0.3 μm or more and 1 μm or less.
Fluorine compounds segregate in surface portion 131 of bank 130, and surface portion 131 has high liquid repellency and low wettability. That is, the surface portion 131 is occupied by the lyophobic portion 132. The contact angle of the lyophobic portion 132 with respect to the ink of the organic semiconductor layer 145 is 20 degrees or more and 70 degrees or less, and preferably 30 degrees or more and 60 degrees or less. Further, the liquid repellency of the inner portion 136 is relatively high.
Next, an ink produced by dissolving pentacene in an organic solvent is applied to the region defined by bank 130 by an ink jet method.
Then, the solvent of the applied ink was dried by vacuum drying, and the ink was heated at 100 ℃. As a result, the organic semiconductor layer 145 is formed.
Next, bank 130 was irradiated with O in the same manner as in example 12The plasma 320. This removes the fluorine compound from the portion of the liquid-repellent portion 132 of the bank 130 where the organic semiconductor layer 145 does not contact, and this portion has a small liquid-repellent property and a large wettability. That is, the portion of the surface portion 131 serves as the low lyophobic portion 134. The contact angle of the low lyophobic parts 134 with respect to the ink of the 2 nd functional layer 150 is 0 degree or more and 30 degrees or less, and preferably 0 degree or more and 20 degrees or less.
Next, an ink in which gold nanoparticles are dispersed is applied to a part of the low liquid-repellent portion 134 and the organic semiconductor layer 145 by an ink jet method, thereby forming a source electrode 152 and a drain electrode 153. Here, the source electrode 152 and the drain electrode 153 are formed to face each other with a predetermined distance therebetween.
Next, a protective layer 157 covering the source electrode 152, the drain electrode 153, and the low lyophobic portion 134 is formed. Then, a contact hole 400 is formed to expose the drain electrode 153. As a result, the functional device 100 as an organic transistor device shown in fig. 11 is completed.
Therefore, according to any one of the above-described embodiment and modifications 1 to 3 and other modifications, it can be said that an organic transistor device can be manufactured in the same manner.
According to the present disclosure, a functional device and a manufacturing method of the functional device, which can efficiently use materials and can ensure high quality, can be provided.
Industrial applicability
The functional device and the method for manufacturing the functional device according to the present disclosure can be suitably used for functional devices such as an organic EL device, a quantum dot light emitting device, a color conversion filter device, an organic transistor device, and a sensor device.

Claims (17)

1. A functional device is provided with:
a bank having a liquid-repellent section and a low liquid-repellent section having less liquid repellency than the liquid-repellent section on a surface portion;
a 1 st functional layer located in a region defined by the bank and in contact with the liquid-repellent section; and
and a 2 nd functional layer which is in contact with the low lyophobic part and covers the 1 st functional layer.
2. The functional device of claim 1,
the concentration of fluorine atoms in the lyophobic part is higher than that of fluorine atoms in the low lyophobic part.
3. The functional device of claim 2,
the fluorine atom concentration in the lyophobic part is more than 5 atom% and less than 10 atom%,
the concentration of fluorine atoms in the low lyophobic part is more than 0 atom% and less than 5 atom%.
4. The functional device of claim 1,
the concentration of silicon atoms in the lyophobic part is higher than that of silicon atoms in the low lyophobic part.
5. The functional device of claim 4,
the concentration of silicon atoms in the lyophobic part is more than 5 atom% and less than 10 atom%,
the concentration of silicon atoms in the low lyophobic part is more than 0 atom% and less than 5 atom%.
6. The functional device of any one of claims 1 to 5,
the contact angle of the lyophobic part with respect to the ink as the material of the 1 st functional layer is more than 20 degrees and less than 70 degrees,
the contact angle of the low lyophobic part with respect to the ink as the material of the 2 nd functional layer is 0 degree or more and 30 degrees or less.
7. The functional device of any one of claims 1 to 6,
the roughness of the surface of the low lyophobic portion is greater than the roughness of the surface of the lyophobic portion.
8. The functional device of any one of claims 1 to 7,
the 1 st functional layer includes one or more layers among a light emitting layer, a hole injection layer, a hole transport layer, an electron injection layer, and an organic semiconductor layer.
9. The functional device of any one of claims 1 to 8,
the 2 nd functional layer includes one or more layers among an electrode layer, a sealing layer, and a protective layer.
10. A method of manufacturing a functional device, comprising:
forming banks on a substrate;
forming a 1 st functional layer, the 1 st functional layer being located in a region defined by the bank and being in contact with a lyophobic portion of a surface portion of the bank;
forming a low lyophobic portion on a portion of the surface portion, the low lyophobic portion having relatively less lyophobicity than the lyophobic portion; and
a step of forming a 2 nd functional layer, the 2 nd functional layer being in contact with the low lyophobic portion and covering the 1 st functional layer.
11. The method of manufacturing a functional device according to claim 10,
the lyophobic part contains a lyophobic component containing fluorine atoms or silicon atoms,
the step of forming the low lyophobic portion is a step of reducing a concentration of a lyophobic component contained in the lyophobic portion to generate the low lyophobic portion from a part of the lyophobic portion.
12. The method of manufacturing a functional device according to claim 11,
the step of forming the low lyophobic portion is a step of irradiating a part of the lyophobic portion with plasma.
13. The method of manufacturing a functional device according to claim 11,
the step of forming the low lyophobic portion is a step of irradiating a part of the lyophobic portion with ultraviolet light.
14. The method of manufacturing a functional device according to claim 11,
the step of forming the bank includes a step of forming the lyophobic part on the surface part,
the step of forming the low lyophobic portion is a step of accommodating the substrate on which the bank and the 1 st functional layer are formed in an accommodating portion, and heating the bank to reduce a degree of vacuum of the accommodating portion.
15. The method of manufacturing a functional device according to claim 10,
the step of forming the bank includes a step of forming the lyophobic part on the surface part,
the step of forming the low lyophobic portion is a step of cutting off a part of the lyophobic portion to expose the inside of the bank.
16. The method of manufacturing a functional device according to claim 15,
the step of forming the low lyophobic portion is a step of shaving a part of the lyophobic portion by sand blasting.
17. The method of manufacturing a functional device according to claim 15,
the step of forming the low lyophobic portion is a step of scraping a part of the lyophobic portion by mechanical grinding.
CN202110951603.XA 2020-09-17 2021-08-18 Functional device and method for manufacturing functional device Pending CN114203924A (en)

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JP2020-156387 2020-09-17
JP2020156387A JP2022050029A (en) 2020-09-17 2020-09-17 Functional device, and manufacturing method of functional device

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