CN114203859A - Processing method of CIGS thin-film solar cell module with customizable size - Google Patents
Processing method of CIGS thin-film solar cell module with customizable size Download PDFInfo
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- CN114203859A CN114203859A CN202111541123.2A CN202111541123A CN114203859A CN 114203859 A CN114203859 A CN 114203859A CN 202111541123 A CN202111541123 A CN 202111541123A CN 114203859 A CN114203859 A CN 114203859A
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- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000005520 cutting process Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 238000013084 building-integrated photovoltaic technology Methods 0.000 abstract 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 29
- 239000002994 raw material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a processing method of a CIGS thin-film solar cell module with a customizable size, which is characterized in that large-size glass is used as a substrate, a back electrode, a PN junction and a transparent conducting layer are firstly manufactured on the large-size glass substrate, then a plurality of CIGS solar cells with different sizes are cut by adopting a method of cutting firstly and then connecting in series, and finally edge cleaning, laminating, packaging and testing are carried out to obtain the CIGS thin-film solar cell modules with different sizes, so that the requirements of the BIPV market on different cell sizes are met, when the cells with different sizes are processed, reasonable cutting can be carried out according to the size requirements, waste of invalid regions such as edge materials and the like is reduced, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of thin film solar cells, in particular to a processing method of a CIGS thin film solar cell module with a customizable size.
Background
The Copper Indium Gallium Selenide (CIGS) thin-film solar cell is more and more widely applied to the field of Building Integrated Photovoltaics (BIPV) due to the advantages of attractive appearance, low raw material consumption, high low-light performance and the like, and a Building adopting the BIPV technology can meet the self power consumption requirement, can also transmit power to a power grid and has good social benefits.
As CIGS battery modules are increasingly used in buildings, problems such as the size of the battery module is becoming more and more important to practitioners. After the traditional CIGS solar cell module is produced, the size of the module is fixed, mass production and adjustment cannot be performed, and if secondary cutting processing is performed on the cell in the production process, the defects of high product rejection rate, cell effective area waste and the like are easily caused, so that the production cost is greatly increased, and the popularization and application of the CIGS solar cell are hindered.
In order to meet the requirements of BIPV buildings on the sizes of various CIGS solar cells, the processing links of the conventional CIGS solar cells need to be adjusted and optimized, and a method for customizing the sizes of the components according to the requirements is provided.
Disclosure of Invention
The invention aims to provide a processing method of a CIGS thin-film solar cell module with a customizable size.
The invention adopts the following technical scheme: a processing method of a CIGS thin-film solar cell module with a customizable size comprises the following steps:
(1) preparing a back electrode on a glass substrate by adopting a magnetron sputtering method;
(2) sequentially preparing a CIGS film layer, a buffer layer and a high-resistance layer on the back electrode by using a magnetron sputtering method, an evaporation method or a chemical water bath method to form a PN junction of the CIGS solar cell;
(3) preparing a transparent conductive layer by using a magnetron sputtering method to prepare the CIGS solar cell panel;
(4) according to the size requirement, cutting the prepared CIGS solar cell panel by adopting a glass cutting method to obtain CIGS solar cells with different sizes;
(5) the steps of scribing a film layer, filling insulating glue and metal grid lines are utilized to carry out internal series connection of the battery;
(6) and carrying out edge cleaning, laminating, packaging and testing to obtain CIGS solar cell modules with different sizes.
Furthermore, the width of the glass substrate is 0.5-3.5 m, and the length of the glass substrate is 1.0-4.5 m.
Further, the glass cutting method is knife wheel cutting, laser cutting or water jet cutting.
Specifically, the step (5) is to remove part of the transparent conducting layer and the PN junction layer by using a mechanical scribing method, and scribe a first scribing line with the width of 150-300 μm; then, the back electrode is scribed at the bottom of the first scribing by using a laser scribing method, the back electrode is separated, and a second scribing is formed, wherein the width of the second scribing is 20-100 mu m; filling the insulating glue into the second scribing line by using ink-jet, photoresist and other methods, wherein the back electrode on one side of the insulating glue is exposed, and the back electrode on the other side of the insulating glue is not exposed; and finally, depositing metal grid lines on the surface of the transparent conducting layer by using methods such as screen printing and the like, wherein one end of each metal grid line is disconnected at the edge of the transparent conducting layer, the other end of each metal grid line is in contact with a back electrode at the bottom of the first scribing line of the adjacent battery, the metal grid lines are not in contact with PN junctions of the adjacent batteries and the conductive transparent conducting layer, and the distance between every two adjacent metal grid lines is 1-10 mm.
Compared with the prior art, the invention has the advantages and effects that:
1. optimizing the cell processing step, namely manufacturing and cutting a plurality of CIGS solar cells with different sizes on the same glass substrate by using a large-size glass substrate, and meeting the requirements of the BIPV market on different cell sizes;
2. the utilization rate of raw materials of the battery is improved, when the batteries with different sizes are processed, reasonable planning can be carried out according to the size requirement, waste of invalid areas such as leftover materials is reduced, and the production cost can be reduced.
Drawings
Fig. 1 is a schematic diagram of the structure of a CIGS thin-film solar cell of the present invention.
Fig. 2 and 3 are schematic views of cutting of a CIGS solar panel.
Fig. 4 is a schematic diagram of a series configuration of the CIGS thin-film solar cell module of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
With reference to fig. 1, fig. 2, fig. 3, and fig. 4, a method for processing a CIGS thin-film solar cell module with a customizable size includes the following steps:
(1) preparing a back electrode 2 on a glass substrate 1 with 2.0 gamma of 3.0m by adopting a magnetron sputtering method;
(2) sequentially preparing a CIGS film layer 3, a buffer layer and a high resistance layer 4 on the back electrode by using a magnetron sputtering method, an evaporation method or a chemical water bath method to form a PN junction of the CIGS solar cell;
(3) preparing a transparent conductive layer 5, namely a front electrode, by using a magnetron sputtering method to prepare the CIGS solar cell panel;
(4) cutting the prepared CIGS solar panel by using a glass cutting method, and cutting CIGS solar cells with different sizes according to the size requirement, for example, four cells 6a, 6b, 6c and 6d with the same size can be cut according to the requirement, as shown in FIG. 2; batteries of different sizes 7a, 7b, 7c, 7d, 7e, etc. may also be cut out as desired, as shown in fig. 3. The glass cutting method may be cutter wheel cutting (mechanical cutting), laser cutting, water jet cutting, and the like.
(5) As shown in fig. 4, a mechanical scribing method is used to remove part of the transparent conductive layer 5 and the PN junction layer, and a first scribing line 1a is scribed with a width of 150-300 μm; then, the back electrode 2 is scribed at the bottom of the first scribing line 1a by using a laser scribing method, the back electrode 2 is separated, and a second scribing line 2a is formed, wherein the width of the second scribing line 2a is 20-100 μm; then, filling the insulating glue 2c into the second scribing line 2a by using methods such as ink jet, photoresist and the like, wherein the back electrode 2 on the left side of the insulating glue 2c is not exposed, and the back electrode 2 on the right side of the insulating glue 2c is exposed; depositing a metal grid line 3a on the surface of the transparent conducting layer 5 by using methods such as screen printing and the like, wherein one end of the metal grid line 3a is disconnected at the edge of the transparent conducting layer 5, the other end of the metal grid line 3a is contacted with a back electrode 2 at the bottom of a first scribing line 1a of an adjacent battery, the metal grid line is not contacted with a PN junction of the adjacent sub-battery and the conducting transparent conducting layer, the distance between every two adjacent metal grid lines is 1-10 mm, and the internal series connection of the batteries is completed;
(6) and carrying out edge cleaning, laminating, packaging and testing to obtain CIGS solar cell modules with different sizes.
According to the invention, large-size glass is used as a substrate, a plurality of CIGS solar cells with different sizes are prepared by adopting a method of cutting firstly and then connecting in series, the requirements of the BIPV market on the sizes of the cells are met, the series connection step is placed behind the cutting step, the utilization rate of raw materials of the cells is improved, when the cells with different sizes are processed, reasonable cutting can be carried out according to the size requirements, the waste of invalid regions such as leftover materials and the like is reduced, and the production cost is reduced.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
Claims (7)
1. A processing method of a CIGS thin-film solar cell module with a customizable size is characterized by comprising the following steps:
(1) preparing a back electrode on a glass substrate by adopting a magnetron sputtering method;
(2) sequentially preparing a CIGS film layer, a buffer layer and a high-resistance layer on the back electrode by using a magnetron sputtering method, an evaporation method or a chemical water bath method to form a PN junction layer of the CIGS solar cell;
(3) preparing a transparent conductive layer by using a magnetron sputtering method to prepare the CIGS solar cell panel;
(4) according to the size requirement, cutting the prepared CIGS solar cell panel by adopting a glass cutting method to obtain CIGS solar cells with different sizes;
(5) the steps of scribing a film layer, filling insulating glue and metal grid lines are utilized to carry out internal series connection of the battery;
(6) and performing edge cleaning, laminating, packaging and testing to obtain CIGS thin-film solar cell modules with different sizes.
2. The method for processing CIGS thin-film solar cell modules with customizable dimensions as defined in claim 1, wherein: the width of the glass substrate is 0.5-3.5 m, and the length of the glass substrate is 1.0-4.5 m.
3. The method for processing a CIGS thin-film solar cell module with customizable dimensions as claimed in claim 1 or 2, wherein: the glass cutting method is knife wheel cutting, laser cutting or water jet cutting.
4. The method for processing CIGS thin-film solar cell modules with customizable dimensions as defined in claim 1, wherein: and (5) removing part of the transparent conducting layer and the PN junction layer by using a mechanical scribing method, scribing a first scribing line, and then scribing the back electrode at the bottom of the first scribing line by using a laser scribing method to separate the back electrode to form a second scribing line.
5. The method for processing CIGS thin-film solar cell modules with customizable dimensions as recited in claim 4, wherein: the width of the first scribe line is 150-300 μm, and the width of the second scribe line is 20-100 μm.
6. The method for processing a CIGS thin-film solar cell module with customizable dimensions according to claim 4 or 5, characterized in that: and (5) filling the insulating glue into the second scribing line by using an ink-jet or photoresist method, wherein the back electrode on one side of the insulating glue is exposed, and the back electrode on the other side of the insulating glue is not exposed.
7. The method for processing CIGS thin-film solar cell modules with customizable dimensions as defined in claim 6, wherein: and (5) depositing metal grid lines on the surface of the transparent conducting layer by using a screen printing method, wherein one end of each metal grid line is disconnected at the edge of the transparent conducting layer, the other end of each metal grid line is in contact with a back electrode at the bottom of the first scribing line of the adjacent battery, the metal grid lines are not in contact with PN junctions of the adjacent batteries and the conductive transparent conducting layer, and the distance between every two adjacent metal grid lines is 1-10 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111541123.2A CN114203859A (en) | 2021-12-16 | 2021-12-16 | Processing method of CIGS thin-film solar cell module with customizable size |
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| CN202111541123.2A CN114203859A (en) | 2021-12-16 | 2021-12-16 | Processing method of CIGS thin-film solar cell module with customizable size |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817759A (en) * | 2018-12-25 | 2019-05-28 | 北京铂阳顶荣光伏科技有限公司 | Thinfilm solar cell assembly and preparation method thereof |
| CN112786737A (en) * | 2021-01-26 | 2021-05-11 | 凯盛光伏材料有限公司 | CIGS thin-film solar cell module and scribing method thereof |
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- 2021-12-16 CN CN202111541123.2A patent/CN114203859A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817759A (en) * | 2018-12-25 | 2019-05-28 | 北京铂阳顶荣光伏科技有限公司 | Thinfilm solar cell assembly and preparation method thereof |
| CN112786737A (en) * | 2021-01-26 | 2021-05-11 | 凯盛光伏材料有限公司 | CIGS thin-film solar cell module and scribing method thereof |
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