CN114203340B - Conductive film - Google Patents
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- CN114203340B CN114203340B CN202111543188.0A CN202111543188A CN114203340B CN 114203340 B CN114203340 B CN 114203340B CN 202111543188 A CN202111543188 A CN 202111543188A CN 114203340 B CN114203340 B CN 114203340B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 241000239290 Araneae Species 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 19
- 229910007667 ZnOx Inorganic materials 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910003087 TiOx Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 219
- 239000010408 film Substances 0.000 description 68
- 239000011248 coating agent Substances 0.000 description 32
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- 238000000151 deposition Methods 0.000 description 22
- 238000007747 plating Methods 0.000 description 10
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- 238000005516 engineering process Methods 0.000 description 3
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- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
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- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- -1 ZnOx Chemical class 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The embodiment of the disclosure provides a conductive film, which comprises a substrate layer, wherein a flat layer, a gradient seed layer, a metal layer, a spider web layer, a seed layer and a color matching layer are sequentially arranged on the substrate layer in a deposition mode, and metal in the metal layer can realize layered growth. The embodiment of the disclosure can realize layered growth of a silver layer, and ensures that the transparent energy, the dew point and the resistivity are taken into account under the condition of ensuring certain solar transmittance under the condition of the same material consumption, so that the production cost is low and the application scene is wide.
Description
Technical Field
The present disclosure relates to the field of conductive devices, and in particular, to a conductive film.
Background
In order to meet the increasing material culture demands of people, the refrigerated display areas in supermarkets are gradually attractive and visual, and transparent conductive films are often arranged in the refrigerated display areas. However, the existing transparent conductive film cannot achieve the characteristics of high transmittance and low energy consumption, which is deviated from the goal of carbon peak; meanwhile, the color reduction degree of the conventional transparent conductive film is low, and color cast can be caused by observing the articles through the conventional transparent conductive film, so that the customer can be influenced in purchasing the articles. Specifically, because the inside temperature of the refrigerated cabinet is low, the content of external water vapor is high, and the door is easy to form condensation when the door is opened and closed to take commodities, the subsequent customer's purchase of the commodities in the display cabinet can be influenced. In the prior art, dew condensation is rapidly removed by electric heating, so that energy is wasted greatly.
In addition, the energy consumption of heating and air conditioning accounts for 20% of the total social energy consumption, and the passive energy-saving building rises to a new height again along with the proposal of the peak of carbon. From the laws of thermodynamics, three ways of energy loss are radiation, convection and conduction, respectively. The global temperate climate zone is characterized in that due to different incident angles of the sun in summer and winter, the requirement of summer on sunshade can be realized through the sunshade, and in other times than summer, especially winter, people hope that the heat of the sun can enter the room as much as possible, and meanwhile, precious heat loss caused by heating or air conditioning is not needed. The application of a hollow or vacuum can greatly reduce convective and conductive energy losses, whereas transparent conductive films can achieve reduced energy losses by radiation. However, the high solar transmittance and low radiant energy loss are contradictory, and merely adding a conductive layer results in a reduction in solar transmittance while reducing radiant energy loss. The structure of the existing conductive film can not realize layered growth of a metal silver (Ag) layer in the conductive film, so that the waste of production materials is caused, and the maximization of the material performance is not achieved.
In addition, today is the age of the internet, with integrated circuits and various components being the basis, and thin film technology being the basis for making chips, sensors, integrated circuits, and the like. With the trend of miniaturization, light weight and the like of devices, more and more strict requirements are put on the purity of film materials, stress and various defects in the growth process. The film growing mode of sputtering mode is generally island-shaped growth, and when the film is in the thickness of tens of nanometers, the roughness of the film can reach tens of nanometers. When such a film layer is used as a base layer, it is far from satisfactory.
In the process technology for manufacturing the conductive film, due to the existence of stress, along with the thickening of the film, the film layer has the risk of cracking or falling off, which greatly influences the application of the thick film, especially in the fields of semiconductor packaging and the like, and if the film layer has microcracks, the service life of the device is seriously influenced. In the fields of tool plating, decorative plating and the like, the performance and the service life of the tool can be affected when the stress of the film layer is not released.
Disclosure of Invention
In order to solve the problems in the prior art, an embodiment of the present disclosure provides a conductive film, which includes a substrate layer, on which a flat layer, a gradient seed layer, a metal layer, a spider web layer, a seed layer and a color matching layer are sequentially disposed by deposition, wherein metal in the metal layer can realize layered growth; the planarization layer comprises a first planarization layer and a second planarization layer, wherein the first planarization layer is made of a material with smaller interface energy with the substrate layer than the metal layer and the substrate layer, and the second planarization layer realizes layered growth of the silver layer by weak chemical bond energy of the second planarization layer relative to the first planarization layer.
In some embodiments, the substrate layer is made of quartz.
In some embodiments, the planarization layer includes a first planarization layer made of nitride or oxide or forming a oxynitride-based combination layer and a second planarization layer made of oxide.
In some embodiments, the first planar layer is made with at least one of SiAlNx, siZrNx, znSnOx; the second flat layer is made of at least one of ZnOx, znAlOx, znSnOx, znSnOx:Sb.
In some embodiments, the thickness of the first planar layer is selected in the range of 10.0-40.0 nm; the thickness of the second planarization layer is selected in the range of 10.0-40.0 nm.
In some embodiments, the graded seed layer is a combined layer based on multiple oxides or a combined layer based on different compositional gradients of a single oxide.
In some embodiments, the gradient seed layer is made using at least one of ZnSnOx-ZnO、ZnSnOx:Sb-ZnO、ZnSnOx-(ZnSnOx:ZnOx)-ZnO、ZnSnOx;Sb-(ZnSnOx:Sb:ZnOx)-ZnO、ZnSnOx-(ZnSnOx:ZnAlOx)-ZnAlO;ZnSnOx;Sb-(ZnSnOx:Sb:ZnAlOx)-ZnAlO.
In some embodiments, the thickness of the gradient seed layer is selected in the range of 10.0-40.0 nm.
In some embodiments, the metal layer is made of silver or a silver alloy.
In some embodiments, the thickness of the metal layer is selected in the range of 10.0-20.0 nm.
In some embodiments, the spider web layer is made of metal or a gradient oxide.
In some embodiments, the spider web layer employs NiCrx, ni, ti, cr; at least one of NiCrOx, tiOx, gradient NiCrx-NiCrOx and gradient Ti-TiOx.
In some embodiments, the thickness of the spider web layer is selected in the range of 0.0-1.5 nm.
In some embodiments, the seed layer is made of an oxide or nitride.
In some embodiments, the seed layer is made of at least one of ZnOx, znAlOx, znSnOx, znSnOx:sb.
In some embodiments, the thickness of the seed layer is selected in the range of 10.0-40.0 nm.
In some embodiments, the toning layer includes a first toning layer and a second toning layer having different refractive indices, the first toning layer and/or the second toning layer being made of nitride or oxide or forming a oxynitride-based combined layer.
In some embodiments, the first and/or second toning layers are made using at least one of SiAlNx, siZrNx, znSnOx, zrOx.
In some embodiments, the thickness of the first and/or second toning layers is selected in the range of 10.0-40.0 nm.
According to the embodiment of the disclosure, the stress and the growth defect of the composite film layer, especially the roughness of the film layer, are improved by arranging the film layer with excessive gradient. The method lays a foundation for further deposition of the core functional layer, and helps the metal layer serving as the core layer to approach layered growth. The resistivity is the lowest and the roughness is the smallest under the condition of realizing the same film thickness.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to a person of ordinary skill in the art.
Fig. 1 is a schematic structural view of a conductive film according to an embodiment of the present disclosure;
FIG. 2 is a schematic illustration of the preparation of a conductive film according to an embodiment of the present disclosure;
fig. 3 is a schematic illustration of the preparation of a conductive film according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed description of known functions and known components.
The disclosed embodiments relate to a conductive film that can be used, for example, in side windows of vehicles, windows of display cases, etc., that is, can be widely used in passive energy-saving building devices.
As shown in fig. 1, the conductive film according to the embodiment of the present disclosure includes a transparent substrate layer as a substrate, where the substrate layer may be quartz, for example; depositing a multilayer film on the substrate layer by adopting a film plating process, specifically, sequentially arranging a flat layer 101, a gradient seed layer 102, a metal layer 103, a spider web layer 104, a seed layer 105 and a color matching layer 106 on the substrate layer; wherein the metal layer 103 is made of silver (Ag) or silver alloy, but other metals such as aluminum are also possible; the thickness of the metal layer is selected to be in the range of 10.0-20.0 nm. The metal here can realize layered growth in the conductive film, thereby making the conductive film have a conductive function. In the embodiment of the present disclosure, the metal layer 103 is made of silver as an example, but is not limited to the conductive film.
Specifically, since the roughness of the substrate layer is generally in the range of several hundred nanometers, and the thickness of the silver layer (as the metal layer 103) made of silver is generally in the range of tens of nanometers, if the growth of the silver layer is directly achieved on the substrate layer, the discontinuity of the film layer is caused, and the resistance of the silver layer is significantly increased or even caused to be nonconductive, for which reason the planarization layer 101 is provided on the substrate layer, where the planarization layer 101 serves to improve the roughness of the substrate layer so as to satisfy the requirement of the layered growth of the silver layer.
Wherein the planarization layer 101 further comprises a first planarization layer 1011 and a second planarization layer 1012, wherein the first planarization layer 1011 is preferably made of a material having a smaller interfacial energy with the substrate layer, and particles can migrate more freely on the surface of the substrate layer due to the smaller adsorption energy, and further can uniformly nucleate on the substrate layer to improve the roughness of the surface of the substrate layer, and can increase the bonding force between the film layer and the substrate layer by forming O-M-O/N (about 300 kJ/mol), wherein the first planarization layer 1011 can be made of nitride or oxide, and can also form a combination layer based on oxynitride, such as SiAlNx, siZrNx, znSnOx, etc.; the thickness of the first planar layer 1011 here is selected to be in the range of 10.0-40.0 nm.
The second flat layer 1012 has wider migration range in film growth, especially annealing process, due to relatively weak chemical bond energy (about 100 kJ/mol), further improves the surface roughness of 1011 layers to achieve layered growth of silver layers, and the second flat layer 1012 is made of oxide, such as ZnOx, znAlOx, znSnOx, znSnOx:Sb, etc.; the thickness of the second planar layer 1012 here is selected in the range of 10.0-40.0 nm.
Further, since the planarization layer 101 is made of a material such as oxide or nitride, and has a different lattice constant from that of the silver layer, if the silver layer is directly disposed on the planarization layer 101, there will be a structural mutation between layers, a serious lattice mismatch, various defects such as dislocation, etc., and as the defects accumulate, the stress between the film layers will become larger, and the film growth will be affected. For this purpose, a graded seed layer 102 is provided on the planarization layer 101, the graded seed layer 102 being a combination layer based on a plurality of oxides or a combination layer based on different composition gradients of a single oxide, for example, using ZnSnOx-ZnO, znSnOx: sb-ZnO; or a combination of oxide composition gradients, such as at least one of ZnSnOx-(ZnSnOx:ZnOx)-ZnO、ZnSnOx;Sb-(ZnSnOx:Sb:ZnOx)-ZnO、ZnSnOx-(ZnSnOx:ZnAlOx)-ZnAlO;ZnSnOx;Sb-(ZnSnOx:Sb:ZnAlOx)-ZnAlO, with a gradient of oxide composition concentration between the gradient seed layers 102. The gradient seed layer 102 herein has a thickness selected in the range of 10.0-40.0 nm.
The graded seed layer 102, which is formed using a combination of ZnSnOx and ZnOx in embodiments of the present disclosure, is explained below as an example. Firstly, materials ZnSnOx and ZnOx serving as the gradient seed layer 102 are placed in the same sputtering compartment, the conductive film provided with the flat layer 101 is sequentially deposited with materials with different components along the running direction of the substrate (for example, znSnOx materials can be arranged at the rear of the running direction of the substrate, znOx materials are arranged at the front of the running direction of the substrate), the gradual transition of two material components is realized by the horizontal linear motion of the substrate so as to realize the ZnSnOx of the bottom layer and the ZnOx of the upper layer, thus, the concentration of ZnSnOx of the bottom layer of the gradient seed layer 102 is gradually changed from 100% to 0% of the concentration of the top part of the ZnOx, the concentration of ZnOx is gradually changed from 0% of the bottom layer to 100% of the concentration of the top part of the ZnOx, and thus, by arranging the gradient seed layer 102, film layer defects such as lattice adaptation, dislocation and the like between film layers can be eliminated, the lattice constant of a hexagonal prism structure realized at the top of the gradient seed layer 102 is just matched with the lattice constant of a silver surface grown in the silver layer, the surface of the hexagonal prism structure realized on the top of the gradient seed layer can preferentially grow on the gradient seed layer 102, the conductive film is greatly increased, and the defect is brought by the conductive film.
In addition, silver is one of solid materials with optimal fluidity, so that the silver layer can be agglomerated in the growth process, particularly in the annealing process, the occurrence of agglomeration can cause the discontinuity of a film structure, the conductivity is seriously influenced, meanwhile, the haze can be generated, the light scattering phenomenon is increased, and the transmittance is influenced. For this reason, a spider web layer 104 is disposed on the metal layer 103, which can firmly lock silver atoms like a spider web during annealing of the film layer, and prevent migration, thereby reducing or even eliminating agglomeration of the metal Ag layer, so that the film layer maintains optimal roughness, and the spider web layer 104 can be made of metal or gradient metal, or can be made of gradient oxide, such as NiCrx, ni, ti, cr; niCrOx, tiOx, gradient NiCrx-NiCrOx, gradient Ti-TiOx, and the like. The thickness of the spider web layer here is in the range of 0.0-1.5 nm.
To further protect the silver layer, the seed layer 105 is provided over the spider web layer 104, the seed layer 105 being made of an oxide or nitride, such as ZnOx, znAlOx, znSnOx, znSnOx: sb or the like. The thickness of the seed layer here is selected in the range of 10.0-40.0 nm.
Furthermore, as the thickness of the metal layer 103 increases due to, for example, the growing of a silver layer, the transmittance will be lower and lower, in order to obtain an optimal transmittance and to make the overall color of the stack more aesthetically pleasing, the color matching layer 106 is provided for this purpose, using the interference principle of light, to achieve an adjustable color of the film.
The color matching layer 106 includes a first color matching layer 1061 and a second color matching layer 1062, wherein refractive indexes of the first color matching layer 1061 and the second color matching layer 1062 are different, the first color matching layer 1061 may be made of nitride or oxide, or an oxynitride combination layer such as SiAlNx, siZrNx, znSnOx, zrOx may be formed. The thickness of the first toner layer 1061 is selected in the range of 10.0 to 40.0 nm; the second toner layer 1062 may be made of nitride or oxide, or may be formed of an oxynitride combination layer such as SiAlNx, siZrNx, znSnOx, zrOx. The thickness of the second toner layer 1062 is selected in the range of 10.0 to 40.0 nm.
The embodiment of the disclosure also provides a preparation method of the conductive film, which can prepare the conductive film of the embodiment of the disclosure, taking the example of realizing the layered growth of the film layer of nano silver,
As shown in fig. 2 and 3, the substrate advances in the arrow direction during the deposition process, wherein materials with different proportions are disposed in the same vacuum cavity of the film plating chamber, oxygen (O2) or argon (Ar) is introduced during the deposition process, and the materials can be pure metals or alloys, pure oxides or oxide combinations with different proportions, such as a combination of ni—cr, a combination of ZnSnOx-ZnAlOx, and the like, according to different layers deposited. The material can be arranged in a plane or in various shapes such as a cylinder; in addition, in order to facilitate deposition, different components may be disposed on the same target, or different components may be disposed on different targets.
Specifically, the preparation method can be adopted, and specifically comprises the following steps:
(1) Cleaning the substrate layer;
(2) The substrate layer is transmitted into a coating chamber for coating, the flat layer 101 is formed by coating, the total power of equipment of a coating device is 20.0-40.0kW, and the deposition thickness of the flat layer 101 is set to be 10.0-40.0nm;
In another embodiment, firstly, the first flat layer 1011 is formed by plating, the total power of equipment of a plating device is controlled in the range of 20.0-40.0kW, and the deposition thickness of the first flat layer 1011 is set to be 10.0-40.0nm; forming the second flat layer 1012 by coating, controlling the total equipment power of a coating device to be in the range of 30.0-40.0kW, and setting the deposition thickness of the second flat layer 1012 to be 10.0-40.0nm;
(4) Forming the gradient seed layer 102 by coating, wherein a gradient deposition process is adopted in the process of forming the gradient seed layer 102, the total power of equipment of a coating device is controlled in the range of 20.0-40.0kW, and the deposition thickness of the gradient seed layer 102 is set to be 10.0-40.0nm;
(5) The metal layer 103 is formed by coating, the total power of equipment of a coating device is controlled in the range of 6-8.0kW, and the deposition thickness of the metal layer 103 is set to be 10.0-20.0nm;
(6) The spider web layer 104 is formed by coating, the total power of equipment of a coating device is controlled in the range of 1.0-5.0kW, and the deposition thickness of the spider web layer 104 is set to be 0.3-1.0nm;
(7) Forming the seed layer 105 by coating, controlling the total power of equipment of a coating device within the range of 10.0-25.0kW, and setting the deposition thickness of the seed layer 105 to be 10-40nm;
(8) Forming the first color matching layer 1061 by coating, controlling the total power of equipment of a coating device in the range of 10.0-35.0kW, and setting the deposition thickness of the first color matching layer 1061 to be 10-40nm;
(9) The second color matching layer 1062 is formed by plating, the total power of equipment of the plating device is controlled in the range of 10.0-35.0kW, and the deposition thickness of the second color matching layer 1062 is set to be 10-20nm.
In a specific embodiment of the method for producing a conductive film, the thickness of the substrate layer formed by using quartz is 1mm, the thickness of the first flat layer 1011 is 20nm, the thickness of the second flat layer 1012 is 30nm, the thickness of the gradient seed layer 102 is 30nm, the thickness of the spider web layer 104 is 15nm, the thickness of the seed layer 105 is 20nm, the thickness of the first color matching layer 1061 is 30nm, and the thickness of the second color matching layer 1062 is 19.0nm.
The specific operation steps for preparing the conductive film are as follows:
(1) Cleaning the substrate layer made of quartz having a thickness of 1 mm;
(2) Transferring the substrate layer into a coating chamber for coating, firstly, forming a first flat layer 1011 by coating, controlling the total power of equipment of a coating device at 27kW, and setting the deposition thickness of the first flat layer 1011 to be 20nm;
(3) Forming the second flat layer 1012 by coating, controlling the total power of equipment of a coating device at 40.0kW, and setting the deposition thickness of the second flat layer 1012 at 40.0nm;
(4) Forming the gradient seed layer 102 by coating, controlling the total power of equipment of a coating device at 40.0kW, and setting the deposition thickness of the gradient seed layer 102 at 40.0nm;
(5) The metal layer 103 is formed by coating, the total equipment power of a coating device is controlled to be 8.0kW, and the deposition thickness of the metal layer 103 is set to be 15nm;
(6) The spider web layer 104 is formed by coating, the total power of equipment of a coating device is controlled to be 1.5kW, and the deposition thickness of the spider web layer 104 is set to be 0.4nm;
(7) Forming the seed layer 105 by coating, controlling the total power of equipment of a coating device to be 15.0kW, and setting the deposition thickness of the seed layer 105 to be 20nm;
(8) Forming the first color matching layer 1061 by coating, controlling the total power of equipment of a coating device at 20kW, and setting the deposition thickness of the first color matching layer 1061 at 25nm;
(9) The second color matching layer 1062 is formed by plating, the total equipment power of the plating device is controlled at 35.0kW, and the deposition thickness of the second color matching layer 1062 is set to be 20nm.
In this embodiment, the transparent conductive film prepared by setting a specific gradient film layer material and a specific film layer structure in combination with a specific film layer thickness was tested, and the result is as follows:
| Solar transmittance | Resistivity of-6 Ω cm | Color rendering index |
| 67％ | 1.587 | 98.9 |
In addition, the non-gradient seed layer can be used as a control test, in this embodiment, a specific gradient film layer material and a specific film layer structure are combined with a specific film layer thickness, and the prepared film is subjected to a bonding force test, so that the bonding force of the conductive film can be improved, and the result is as follows:
| Gradient layer binding force | Non-gradient binding force |
| 147 | 35 |
According to the embodiment of the disclosure, the stress and the growth defect of the composite film layer, especially the roughness of the film layer, are improved by arranging the film layer with excessive gradient. The method lays a foundation for further deposition of the core functional layer, and helps the metal layer serving as the core layer to approach layered growth. The resistivity is the lowest and the roughness is the smallest under the condition of realizing the same film thickness.
The foregoing description is only of the preferred embodiments of the present disclosure and description of the principles of the technology being employed. It will be appreciated by persons skilled in the art that the scope of the disclosure referred to in this disclosure is not limited to the specific combinations of features described above, but also covers other embodiments which may be formed by any combination of features described above or equivalents thereof without departing from the spirit of the disclosure. Such as those described above, are mutually substituted with the technical features having similar functions disclosed in the present disclosure (but not limited thereto).
Moreover, although operations are depicted in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order. In certain circumstances, multitasking and parallel processing may be advantageous. Likewise, while several specific implementation details are included in the above discussion, these should not be construed as limiting the scope of the present disclosure. Certain features that are described in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are example forms of implementing the claims.
While various embodiments of the present disclosure have been described in detail, the present disclosure is not limited to these specific embodiments, and various modifications and embodiments can be made by those skilled in the art on the basis of the concepts of the present disclosure, which modifications and modifications should fall within the scope of the claims of the present disclosure.
Claims (19)
1. The conductive film comprises a substrate layer and is characterized in that a flat layer, a gradient seed layer, a metal layer, a spider web layer, a seed layer and a color matching layer are sequentially arranged on the substrate layer in a deposition mode, and metal in the metal layer can realize layered growth; the planarization layer comprises a first planarization layer and a second planarization layer, wherein the first planarization layer is made of a material with smaller interface energy with the substrate layer than the metal layer and the substrate layer, and the second planarization layer realizes layered growth of the silver layer by weak chemical bond energy of the second planarization layer relative to the first planarization layer.
2. The conductive film of claim 1, wherein the substrate layer is made of quartz.
3. The conductive film according to claim 1, wherein the first flat layer is made of nitride or oxide or forms a combined layer based on oxynitride, and the second flat layer is made of oxide.
4. A conductive film according to claim 3, wherein the first planar layer is made of at least one of SiAlNx, siZrNx, znSnOx; the second flat layer is made of at least one of ZnOx, znAlOx, znSnOx, znSnOx:Sb.
5. A conductive film according to claim 3, wherein the thickness of the first planar layer is selected in the range of 10.0-40.0 nm; the thickness of the second planarization layer is selected in the range of 10.0-40.0 nm.
6. The conductive film according to claim 1, wherein the gradient seed layer is a combination layer based on a plurality of oxides or a combination layer based on different composition gradients of a single oxide.
7. The conductive film of claim 6, wherein the graded seed layer is formed using at least one of ZnSnOx-ZnO、ZnSnOx:Sb-ZnO、ZnSnOx-(ZnSnOx:ZnOx)-ZnO、ZnSnOx;Sb-(ZnSnOx:Sb:ZnOx)-ZnO、ZnSnOx-(ZnSnOx:ZnAlOx)-ZnAlO;ZnSnOx;Sb-(ZnSnOx:Sb:ZnAlOx)-ZnAlO.
8. The conductive film of claim 6, wherein the thickness of the graded seed layer is selected in the range of 10.0-40.0 nm.
9. The conductive film of claim 1, wherein the metal layer is made of silver or a silver alloy.
10. The conductive film of claim 9, wherein the thickness of the metal layer is selected in the range of 10.0-20.0 nm.
11. The conductive film of claim 1, wherein the spider web layer is made of a metal or a gradient oxide.
12. The conductive film of claim 11, wherein the spider web layer employs NiCrx, ni, ti, cr; at least one of NiCrOx, tiOx, gradient NiCrx-NiCrOx and gradient Ti-TiOx.
13. The conductive film of claim 11, wherein the thickness of the spider web layer is selected in the range of 0.0-1.5 nm.
14. The conductive film according to claim 1, wherein the seed layer is made of an oxide or a nitride.
15. The conductive film of claim 14, wherein the seed layer is made of at least one of ZnOx, znAlOx, znSnOx, znSnOx:sb.
16. The conductive film of claim 14, wherein the seed layer has a thickness selected in the range of 10.0-40.0 nm.
17. The conductive film according to claim 1, wherein the toner layer includes a first toner layer and a second toner layer different in refractive index, the first toner layer and/or the second toner layer being made of nitride or oxide or forming a combined layer based on oxynitride.
18. The conductive film of claim 17, wherein the first and/or second toning layers are made using at least one of SiAlNx, siZrNx, znSnOx, zrOx.
19. The conductive film according to claim 17, wherein the thickness of the first and/or second toning layer is selected in the range of 10.0-40.0 nm.
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