CN114188812B - Temperature tuning 9-11 mu m long-wave infrared solid laser - Google Patents
Temperature tuning 9-11 mu m long-wave infrared solid laser Download PDFInfo
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- 239000007787 solid Substances 0.000 title claims abstract description 28
- 230000010287 polarization Effects 0.000 claims abstract description 69
- 238000005086 pumping Methods 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 230000008878 coupling Effects 0.000 claims abstract description 24
- 238000010168 coupling process Methods 0.000 claims abstract description 24
- 238000005859 coupling reaction Methods 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 102
- 229910052788 barium Inorganic materials 0.000 claims description 68
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 56
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 56
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052733 gallium Inorganic materials 0.000 claims description 56
- 229910052711 selenium Inorganic materials 0.000 claims description 56
- 239000011669 selenium Substances 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 16
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- 230000005540 biological transmission Effects 0.000 description 5
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- 239000000919 ceramic Substances 0.000 description 2
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- 239000007924 injection Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1028—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
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Abstract
A temperature-tuning 9-11 mu m long-wave infrared solid laser relates to a solid laser. The method solves the problems that the conversion efficiency from pump light to idler frequency light is low and light beam deviation occurs in the process of tuning wavelength when the laser output of 9-11 mu m is realized by an optical nonlinear frequency conversion method based on the existing short wave pump source. The temperature tuning 9-11 mu m long wave infrared solid laser comprises a first pumping source, a first coupling system, a second pumping source, a second coupling system, a power control system, a pumping light polarization state control system, an optical parametric oscillator and a filtering system. The invention is used for temperature tuning of the long-wave infrared solid laser with the wavelength of 9-11 mu m.
Description
Technical Field
The present invention relates to a solid-state laser.
Background
The 9-11 mu m wave band long wave infrared laser is positioned in an atmosphere transmission window, and has wide and important application value in the fields of space communication, infrared guidance, infrared countermeasure, medical treatment, laser radar and the like. The current effective method for obtaining the laser with the wave band of 9-11 μm is to perform frequency down-conversion on the laser with the wave band of 2 μm through optical nonlinear frequency conversion. However, when the laser output of 9-11 μm is realized by the optical nonlinear frequency conversion method based on the existing short-wave pumping source, the included angle between the injected pumping light wave vector and the nonlinear crystal refractive index main axis is not zero, so that the included angle (walk-off angle) between the signal light and the idler light generated in the nonlinear crystal is not equal to zero, and the negative effects of lower conversion efficiency from the pumping light to the idler light and light beam offset in the process of tuning wavelength are brought.
Disclosure of Invention
The invention aims to solve the problems of low conversion efficiency from pump light to idler frequency light and light beam deviation in the wavelength tuning process when the laser output of 9-11 mu m is realized by an optical nonlinear frequency conversion method based on the existing short-wave pump source, and provides a temperature-tuned 9-11 mu m long-wave infrared solid laser.
The temperature tuning 9-11 mu m long wave infrared solid laser comprises a first pumping source, a first plano-concave lens, a first plano-convex lens, a second pumping source, a second plano-concave lens, a second plano-convex lens, a first 45 DEG polaroid, a first half wave plate, a second 45 DEG polaroid, a second half wave plate, a 0 DEG plane OPO input mirror, selenium-gallium-barium crystals, a semiconductor temperature controller, a 0 DEG plane OPO output mirror, a first 45 DEG long wave infrared filter and a second 45 DEG long wave infrared filter;
the concave surface of the first plano-concave lens is opposite to the convex surface of the first plano-convex lens to form a first coupling system; the concave surface of the second plano-concave lens is opposite to the convex surface of the second plano-convex lens to form a second coupling system; the first 45-degree polaroid is a polarization coupling system; the first half wave plate and the second 45-degree polaroid form a power control system; the second half wave plate is a pump light polarization state control system; the 0-degree plane OPO input mirror, the selenium gallium barium crystal, the semiconductor temperature controller and the 0-degree plane OPO output mirror form an optical parametric oscillator; the selenium gallium barium crystal is fixed on the semiconductor temperature controller; the first 45-degree long-wave infrared filter and the second 45-degree long-wave infrared filter form a filter system;
starting the first pumping source or the second pumping source;
when the first pump source is started, the first pump source emits the horizontal polarized pump light, the horizontal polarized pump light passes through the first coupling system, enters the first 45 DEG polaroid in a direction forming an angle of 45 DEG with the normal line of the first 45 DEG polaroid, enters the power control system, and adjusts the angle of the first half wave plate to change the horizontal polarization state into the vertical polarization stateObtaining vertical polarization state pump light, reflecting the vertical polarization state pump light by a second 45-degree polarizer, then entering a second half wave plate, adjusting the angle of the second half wave plate, and obtaining a crystal n with the polarization direction parallel to selenium gallium barium m Pump light of refractive index principal axis;
when the second pump source is started, the second pump source emits vertical polarized pump light, the vertical polarized pump light passes through the second coupling system and then enters the first 45-degree polaroid in a direction forming a 45-degree angle with the normal line of the first 45-degree polaroid, the vertical polarized pump light is reflected to the power control system through the first 45-degree polaroid, the angle of the first half-wave plate is regulated, the vertical polarized pump light passes through the first half-wave plate and then enters the second half-wave plate after being reflected by the second 45-degree polaroid, the angle of the second half-wave plate is regulated, and the polarization direction is parallel to the selenium gallium barium crystal n m Pump light of refractive index principal axis;
the polarization direction is parallel to the selenium gallium barium crystal n m The pump light with the refractive index main axis passes through the 0-degree plane OPO input mirror and is incident to the selenium gallium barium crystal, and the selenium gallium barium crystal has part of polarization direction parallel to the selenium gallium barium crystal n m Performing optical nonlinear frequency conversion on the pump light with the refractive index spindle to obtain signal light with the wavelength of 2.5-2.65 mu m and idler light with the wavelength of 9-11 mu m;
the signal light with the wavelength of 2.5-2.65 μm is incident to the 0-degree plane OPO output mirror and totally reflected, reversely passes through the selenium gallium barium crystal, then is incident to the 0-degree plane OPO input mirror, is reflected by the 0-degree plane OPO input mirror and passes through the selenium gallium barium crystal again, and then repeatedly oscillates in the cavity without output; idler frequency light with the wavelength of 9-11 μm is output from the optical parametric oscillator through a 0-degree plane OPO output mirror; idler light and residual polarization direction output from the optical parametric oscillator are parallel to selenium gallium barium crystal n m The pump light with the principal refractive index is incident to the filtering system, and the residual polarization direction is parallel to the selenium gallium barium crystal n m The pump light of the refractive index main shaft is output through a first 45 DEG long-wave infrared filter, and the idler frequency light output by the optical parametric oscillator is reflected and output through the first 45 DEG long-wave infrared filter and a second 45 DEG long-wave infrared filter in sequence to obtain 9 mu m-11And mu m long wave infrared laser.
The invention has the advantages that:
the invention provides a new design scheme for obtaining 9-11 mu m long-wave infrared laser under the condition that the nonlinear crystal temperature is 5-45 ℃ and no walk-off effect exists. According to the invention, through a pump light polarization coupling mode, the free switching of different pump sources with the wavelength of 2.02-2.12 mu m is realized, and the 9-11 mu m long-wave infrared laser output from the pump light to the idler light with higher conversion efficiency, no walk-off and wide wavelength tuning range is realized within the nonlinear crystal temperature of 5-45 ℃.
Experiments show that when the wavelength of the pumping light is 2.05 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9393.3nm to 10627.4nm. When the average input pump light power is 4.0W, the highest laser output with the center wavelength of 200mW is 10.2 mu m, the slope efficiency of the conversion from the pump light to the idler frequency light reaches 8.03%, and the light-light conversion efficiency reaches 5%, which shows that the invention successfully improves the conversion efficiency from the pump light to the idler frequency light. When the wavelength of the pumping light is 2.09 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9379.8nm to 11071.7nm. Compared with the scheme of acquiring the 9-11 mu m long-wave infrared band laser by using the nonlinear crystal with the non-zero walk-off angle, the invention can realize the effect of tuning the 9-11 mu m wide wavelength within the temperature range of 5-45 ℃ of the nonlinear crystal.
In the invention, the pumping light wave vector is vertical to the end face of the selenium gallium barium (BGSe) crystal and is parallel to the crystal n g The refractive index principal axis only changes the nonlinear crystal temperature in the process of tuning the idler light, and the generated signal light and the idler light are collinear with the pump light according to the refraction law, so that the light beam deviation can not occur.
Drawings
FIG. 1 is a schematic diagram of a temperature-tuned 9-11 μm long-wave infrared solid laser according to the present invention;
FIG. 2 shows the principal axis n of refractive index of selenium-gallium-barium crystal in a 9 μm-11 μm long-wave infrared solid laser with temperature tuning according to an embodiment g 、n m 、n p The appearance of the direction representation and the relative relation of the pump light injection into the crystal;
FIG. 3 is a graph showing the comparison of the wavelength and linewidth of a nonlinear crystal output long-wave infrared laser at different temperatures when a 2.05 μm nanosecond pulse laser is used as a pump source by a temperature-tuned 9 μm-11 μm long-wave infrared solid laser according to the embodiment;
fig. 4 is a graph of the variation of the output long-wave infrared laser power of nonlinear crystal with the pumping power at different temperatures when the temperature-tuned 9-11 μm long-wave infrared solid laser of the example uses 2.05 μm nanosecond pulse laser as the pumping source, ■ is 5 deg.c, 10 deg.c, 15 deg.c, 20 deg.c,25 ℃, diamond-solid-of-30 ℃, +35 ℃, -40 ℃;
FIG. 5 is a plot of the variation of the long-wave infrared laser power with the crystal temperature under the condition of 4W of pumping power when the 2.05 μm nanosecond pulse laser is used as the pumping source by the temperature-tuned 9 μm-11 μm long-wave infrared solid laser according to the embodiment;
FIG. 6 is a graph showing the comparison of the wavelength and linewidth of the nonlinear crystal output long-wave infrared laser at different temperatures when the 2.09 μm nanosecond pulse laser is used as the pumping source by the second embodiment of the temperature tuning 9 μm to 11 μm long-wave infrared solid laser.
Detailed Description
The first embodiment is as follows: the following description is made with reference to fig. 1, and the temperature tuning 9 μm-11 μm long-wave infrared solid laser of the present embodiment includes a first pump source 1-1, a first plano-concave lens 2-1, a first plano-convex lens 3-1, a second pump source 1-2, a second plano-concave lens 2-2, a second plano-convex lens 3-2, a first 45 ° polarizer 4-1, a first half-wave plate 5-1, a second 45 ° polarizer 4-2, a second half-wave plate 5-2, a 0 ° planar OPO input mirror 6-1, a selenogaba crystal 7, a semiconductor temperature controller 8, a 0 ° planar OPO output mirror 6-2, a first 45 ° long-wave infrared filter 9-1, and a second 45 ° long-wave infrared filter 9-2;
the concave surface of the first plano-concave lens 2-1 is opposite to the convex surface of the first plano-convex lens 3-1, so that a first coupling system is formed; the concave surface of the second plano-concave lens 2-2 is opposite to the convex surface of the second plano-convex lens 3-2, so as to form a second coupling system; the first 45-degree polaroid 4-1 is a polarization coupling system; the first half wave plate 5-1 and the second 45-degree polaroid 4-2 form a power control system; the second half wave plate 5-2 is a pump light polarization state control system; the 0-degree plane OPO input mirror 6-1, the selenium gallium barium crystal 7, the semiconductor temperature controller 8 and the 0-degree plane OPO output mirror 6-2 form an optical parametric oscillator; the selenium gallium barium crystal 7 is fixed on the semiconductor temperature controller 8; the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 form a filter system;
starting the first pump source 1-1 or the second pump source 1-2;
when the first pump source 1-1 is started, the first pump source 1-1 emits a horizontal polarized pump light, the horizontal polarized pump light passes through the first coupling system, enters in a direction forming an angle of 45 degrees with the normal line of the first 45 DEG polaroid 4-1 and passes through the first 45 DEG polaroid 4-1, then enters the power control system, the angle of the first half wave plate 5-1 is regulated so that the horizontal polarized state is changed into a vertical polarized state, a vertical polarized pump light is obtained, the vertical polarized pump light is reflected by the second 45 DEG polaroid 4-2 and enters the second half wave plate 5-2, the angle of the second half wave plate 5-2 is regulated, and the polarization direction is parallel to the selenium-gallium-barium crystal 7n m Pump light of refractive index principal axis;
when the second pump source 1-2 is started, the second pump source 1-2 emits the vertical polarized pump light, the vertical polarized pump light passes through the second coupling system, and then enters the first 45 DEG polaroid 4-1 in the direction forming a 45 DEG angle with the normal line of the first 45 DEG polaroid 4-1, the vertical polarized pump light is reflected to the power control system through the first 45 DEG polaroid 4-1, the angle of the first half wave plate 5-1 is regulated, the vertical polarized pump light passes through the first half wave plate 5-1, then enters the second half wave plate 5-2 after being reflected by the second 45 DEG polaroid 4-2, the angle of the second half wave plate 5-2 is regulated, and the polarization direction is parallel to the selenium-gallium-barium crystal 7n is obtained m Pump light of refractive index principal axis;
the polarization direction is parallel to the selenium gallium barium crystal 7n m The pump light with the principal refractive index axis passes through the 0-degree plane OPO input mirror 6-1 and is incident to the selenium gallium barium crystal 7, and the selenium gallium barium crystal 7 has part of the polarization direction parallel to the selenium gallium barium crystal 7n m Performing optical nonlinear frequency conversion on the pump light with the refractive index spindle to obtain signal light with the wavelength of 2.5-2.65 mu m and idler light with the wavelength of 9-11 mu m;
the signal light with the wavelength of 2.5-2.65 μm is incident to the 0-degree plane OPO output mirror 6-2 and totally reflected, reversely passes through the selenium gallium barium crystal 7, then is incident to the 0-degree plane OPO input mirror 6-1, is reflected by the 0-degree plane OPO input mirror 6-1 and passes through the selenium gallium barium crystal 7 again, and then repeatedly oscillates in the cavity without output; idler frequency light with the wavelength of 9-11 μm is output from the optical parametric oscillator through the 0-degree plane OPO output mirror 6-2; idler light and residual polarization direction outputted from the optical parametric oscillator are parallel to the selenium gallium barium crystal 7n m The pump light with the main refractive index axis is incident to the filtering system, and the residual polarization direction is parallel to the selenium-gallium-barium crystal 7n m The pump light of the refractive index main shaft is output through the first 45-degree long-wave infrared filter 9-1, and the idler frequency light output by the optical parametric oscillator is sequentially reflected and output through the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2, so that the 9-11 mu m long-wave infrared laser is obtained.
In this embodiment, the first half-wave plate 5-1 is a broadband wave plate, and in the process of switching pump sources, only the first half-wave plate 5-1 is slightly rotated to change the pump light in the horizontal polarization state into the vertical polarization state, or the vertical polarization state is directly transmitted and reaches the second half-wave plate 5-2; similarly, the second half 5-2 wave plate is slightly rotated to make the polarization direction of the pumping light parallel to the n of the selenium-gallium-barium crystal 7 fixed on the semiconductor temperature controller 8 m A refractive index principal axis; the second pump source 1-2 optical parametric oscillator and the filtering system are constructed and operate in exactly the same way as when the first pump source 1-1 is used.
The beneficial effects of this concrete implementation are:
the specific embodiment provides a new design scheme for obtaining the 9-11 mu m long-wave infrared laser under the condition that the nonlinear crystal temperature is 5-45 ℃ and no walk-off effect exists. According to the invention, through a pump light polarization coupling mode, the free switching of different pump sources with the wavelength of 2.02-2.12 mu m is realized, and the 9-11 mu m long-wave infrared laser output from the pump light to the idler light with higher conversion efficiency, no walk-off and wide wavelength tuning range is realized within the nonlinear crystal temperature of 5-45 ℃.
Experiments show that when the wavelength of the pumping light is 2.05 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9393.3nm to 10627.4nm. When the average input pump light power is 4.0W, the highest laser output with the center wavelength of 200mW is 10.2 mu m, the slope efficiency of the conversion from the pump light to the idler frequency light reaches 8.03%, and the light-light conversion efficiency reaches 5%, which shows that the invention successfully improves the conversion efficiency from the pump light to the idler frequency light. When the wavelength of the pumping light is 2.09 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9379.8nm to 11071.7nm. Compared with the scheme of acquiring the 9-11 mu m long-wave infrared band laser by using the nonlinear crystal with the non-zero walk-off angle, the invention can realize the effect of tuning the 9-11 mu m wide wavelength within the temperature range of 5-45 ℃ of the nonlinear crystal.
In the specific embodiment, the pumping light wave vector is incident perpendicular to the end face of the selenium gallium barium (BGSe) crystal and parallel to the crystal n g The refractive index principal axis only changes the nonlinear crystal temperature in the process of tuning the idler light, and the generated signal light and the idler light are collinear with the pump light according to the refraction law, so that the light beam deviation can not occur.
The second embodiment is as follows: the first difference between this embodiment and the specific embodiment is that: the first pump source 1-1 is a pulse laser with the wavelength of 2.09 mu m or 2.12 mu m and the pulse width of femtosecond, picosecond or nanosecond; the second pump source 1-2 is a pulse laser with a wavelength of 2.02 μm or 2.05 μm and a pulse width of femtosecond, picosecond or nanosecond. The other is the same as in the first embodiment.
And a third specific embodiment: this embodiment differs from one or both of the embodiments in that: the light transmission surfaces of the first plano-concave lens 2-1, the first plano-convex lens 3-1, the second plano-concave lens 2-2 and the second plano-convex lens 3-2 are plated with 2.02 mu m-2.12 mu m antireflection films; the curvature radius of the first plano-concave lens 2-1 and the curvature radius of the second plano-concave lens 2-2 are respectively-50 mm to-200 mm, and the diameters are respectively 10mm to 100mm; the focal lengths of the first plano-convex lens 3-1 and the second plano-convex lens 3-2 are 50 mm-1000 mm, and the diameters are 10 mm-100 mm. The other is the same as the first or second embodiment.
The specific embodiment IV is as follows: this embodiment differs from one of the first to third embodiments in that: the first 45 DEG polaroid 4-1 is coated with a film with a vertical polarization state laser reflectivity of more than 99% for the wavelength of 2.02 mu m-2.05 mu m and a horizontal polarization state laser reflectivity of less than 70% for the wavelength of 2.02 mu m-2.05 mu m, and is coated with a film with a horizontal polarization state laser transmissivity of more than 99% for the wavelength of 2.09 mu m-2.12 mu m and a vertical polarization state laser transmissivity of less than 20% for the wavelength of 2.09 mu m-2.12 mu m. The other embodiments are the same as those of the first to third embodiments.
Fifth embodiment: this embodiment differs from one to four embodiments in that: the second 45 DEG polaroid 4-2 is coated with a film with the vertical polarization state laser reflectivity of more than 99.5% for the wavelength of 2.02-2.12 mu m and the horizontal polarization state laser transmissivity of more than 99.5% for the wavelength of 2.02-2.12 mu m. The other embodiments are the same as those of the first to fourth embodiments.
Specific embodiment six: this embodiment differs from one of the first to fifth embodiments in that: the first half wave plate 5-1 and the second half wave plate 5-2 are broadband wave plates with the wavelength of 2.02-2.12 mu m, and the light transmission surfaces are plated with antireflection films with the wavelength of 2.02-2.12 mu m. The other embodiments are the same as those of the first to fifth embodiments.
Seventh embodiment: this embodiment differs from one of the first to sixth embodiments in that: one surface of the 0-degree plane OPO input mirror 6-1 and one surface of the 0-degree plane OPO output mirror 6-2 are plated with antireflection films for pump light with the wavelength of 2.02-2.12 mu m and idler light with the wavelength of 9-11 mu m, and the other surface is plated with a dielectric film with the signal light reflectivity of more than 99% for the wavelength of 2.5-2.65 mu m. The other embodiments are the same as those of the first to sixth embodiments.
Eighth embodiment: this embodiment differs from one of the first to seventh embodiments in that: the selenium gallium barium crystal 7 is a crystal n with a light-passing surface perpendicular to the crystal n g Refractive index principal axis. The other is the same as in embodiments one to seven.
Detailed description nine: this embodiment differs from one to eight of the embodiments in that: the semiconductor temperature controller 8 is a TEC temperature controller, the temperature is continuously tunable within the range of 0-45 ℃, the control precision is +/-0.1 ℃, and the control precision is +/-0.1 ℃. The others are the same as in embodiments one to eight.
The TEC temperature controller in the specific embodiment utilizes direct current to generate a hot side phenomenon and a cold side phenomenon on the ceramic electrodes through a P-type pair and an N-type pair clamped between two ceramic electrodes, and places the selenium gallium barium crystal 7 on the cold side, so that the precise control of the temperature of the nonlinear crystal is realized.
Detailed description ten: this embodiment differs from one of the embodiments one to nine in that: the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 are respectively coated with a pumping light antireflection film with the wavelength of 2.02-2.12 mu m on one side and a dielectric film with the idler frequency light reflectivity of more than 95% with the wavelength of 9-11 mu m on the other side. The others are the same as in embodiments one to nine.
The following examples are used to verify the benefits of the present invention:
embodiment one:
a temperature tuning 9-11 μm long wave infrared solid laser comprises a first pump source 1-1, a first plano-concave lens 2-1, a first plano-convex lens 3-1, a second pump source 1-2, a second plano-concave lens 2-2, a second plano-convex lens 3-2, a first 45 DEG polaroid 4-1, a first half wave plate 5-1, a second 45 DEG polaroid 4-2, a second half wave plate 5-2, a 0 DEG plane OPO input mirror 6-1, a selenium-gallium-barium crystal 7, a semiconductor temperature controller 8, a 0 DEG plane OPO output mirror 6-2, a first 45 DEG long wave infrared filter 9-1 and a second 45 DEG long wave infrared filter 9-2;
the concave surface of the first plano-concave lens 2-1 is opposite to the convex surface of the first plano-convex lens 3-1, so that a first coupling system is formed; the concave surface of the second plano-concave lens 2-2 is opposite to the convex surface of the second plano-convex lens 3-2, so as to form a second coupling system; the first 45-degree polaroid 4-1 is a polarization coupling system; the first half wave plate 5-1 and the second 45-degree polaroid 4-2 form a power control system; the second half wave plate 5-2 is a pump light polarization state control system; the 0-degree plane OPO input mirror 6-1, the selenium gallium barium crystal 7, the semiconductor temperature controller 8 and the 0-degree plane OPO output mirror 6-2 form an optical parametric oscillator; the selenium gallium barium crystal 7 is fixed on the semiconductor temperature controller 8; the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 form a filter system;
starting a second pump source 1-2, enabling the second pump source 1-2 to emit vertical polarization state pump light, enabling the vertical polarization state pump light to pass through a second coupling system, enabling the vertical polarization state pump light to enter a first 45-degree polaroid 4-1 in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polaroid 4-1, enabling the vertical polarization state pump light to be reflected to a power control system through the first 45-degree polaroid 4-1, adjusting the angle of a first half wave plate 5-1, enabling the vertical polarization state pump light to pass through the first half wave plate 5-1, enabling the vertical polarization state pump light to enter a second half wave plate 5-2 after being reflected by the second 45-degree polaroid 4-2, adjusting the angle of the second half wave plate 5-2, and obtaining a crystal 7n with the polarization direction parallel to selenium gallium barium crystals m Pump light of refractive index principal axis;
the polarization direction is parallel to the selenium gallium barium crystal 7n m The pump light with the principal refractive index axis passes through the 0-degree plane OPO input mirror 6-1 and is incident to the selenium gallium barium crystal 7, and the selenium gallium barium crystal 7 has part of the polarization direction parallel to the selenium gallium barium crystal 7n m Performing optical nonlinear frequency conversion on the pump light with the refractive index spindle to obtain signal light with the wavelength of 2.5-2.65 mu m and idler light with the wavelength of 9-11 mu m;
the signal light with the wavelength of 2.5-2.65 μm is incident to the 0-degree plane OPO output mirror 6-2 and totally reflected, reversely passes through the selenium gallium barium crystal 7, then is incident to the 0-degree plane OPO input mirror 6-1, is reflected by the 0-degree plane OPO input mirror 6-1 and passes through the selenium gallium barium crystal 7 again, and then repeatedly oscillates in the cavity to obtain the lightNo output; idler frequency light with the wavelength of 9-11 μm is output from the optical parametric oscillator through the 0-degree plane OPO output mirror 6-2; idler light and residual polarization direction outputted from the optical parametric oscillator are parallel to the selenium gallium barium crystal 7n m The pump light with the main refractive index axis is incident to the filtering system, and the residual polarization direction is parallel to the selenium-gallium-barium crystal 7n m The pump light of the refractive index main shaft is output through the first 45-degree long-wave infrared filter 9-1, and the idler frequency light output by the optical parametric oscillator is sequentially reflected and output through the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2, so that the 9-11 mu m long-wave infrared laser is obtained.
The second pump source 1-2 is a pulse laser with a wavelength of 2.05 μm and a pulse width of nanoseconds.
The light transmission surfaces of the first plano-concave lens 2-1, the first plano-convex lens 3-1, the second plano-concave lens 2-2 and the second plano-convex lens 3-2 are plated with 2.02 mu m-2.12 mu m antireflection films; the curvature radius of the first plano-concave lens 2-1 and the curvature radius of the second plano-concave lens 2-2 are both-100 mm, and the diameters are both 20mm; the focal length of the first plano-convex lens 3-1 and the second plano-convex lens 3-2 is 100mm, and the diameters are 20mm.
The first 45 DEG polaroid 4-1 is coated with a film with a vertical polarization state laser reflectivity of more than 99% for the wavelength of 2.02 mu m-2.05 mu m and a horizontal polarization state laser reflectivity of less than 70% for the wavelength of 2.02 mu m-2.05 mu m, and is coated with a film with a horizontal polarization state laser transmissivity of more than 99% for the wavelength of 2.09 mu m-2.12 mu m and a vertical polarization state laser transmissivity of less than 20% for the wavelength of 2.09 mu m-2.12 mu m.
The second 45 DEG polaroid 4-2 is coated with a film with the vertical polarization state laser reflectivity of more than 99.5% for the wavelength of 2.02-2.12 mu m and the horizontal polarization state laser transmissivity of more than 99.5% for the wavelength of 2.02-2.12 mu m.
The first half wave plate 5-1 and the second half wave plate 5-2 are broadband wave plates with the wavelength of 2.02-2.12 mu m, and the light transmission surfaces are plated with antireflection films with the wavelength of 2.02-2.12 mu m.
One surface of the 0-degree plane OPO input mirror 6-1 and one surface of the 0-degree plane OPO output mirror 6-2 are plated with antireflection films for pump light with the wavelength of 2.02-2.12 mu m and idler light with the wavelength of 9-11 mu m, and the other surface is plated with a dielectric film with the signal light reflectivity of more than 99% for the wavelength of 2.5-2.65 mu m.
The selenium gallium barium crystal 7 is a crystal n with a light-passing surface perpendicular to the crystal n g Refractive index principal axis.
The semiconductor temperature controller 8 is a TEC temperature controller, the temperature is continuously tunable within the range of 5-45 ℃, and the control precision is +/-0.1 ℃.
The first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 are respectively coated with a pumping light antireflection film with the wavelength of 2.02-2.12 mu m on one side and a dielectric film with the idler frequency light reflectivity of more than 95% with the wavelength of 9-11 mu m on the other side.
Embodiment two: the first difference between this embodiment and the first embodiment is that: starting a first pump source 1-1, enabling the first pump source 1-1 to emit horizontal polarized pump light, enabling the horizontal polarized pump light to enter in a direction forming an angle of 45 degrees with the normal line of a first 45-degree polaroid 4-1 after passing through a first coupling system, enabling the horizontal polarized pump light to enter through the first 45-degree polaroid 4-1, enabling the horizontal polarized pump light to enter a power control system, adjusting the angle of a first half wave plate 5-1 to enable the horizontal polarized pump light to be changed into a vertical polarized pump light, enabling the vertical polarized pump light to enter a second half wave plate 5-2 after being reflected by a second 45-degree polaroid 4-2, adjusting the angle of the second half wave plate 5-2, and enabling the polarization direction to be parallel to a selenium-gallium-barium crystal 7n m Pump light of refractive index principal axis; the first pump source 1-1 is a pulse laser with a wavelength of 2.09 mu m and a pulse width of nanoseconds. The other is the same as in the first embodiment.
FIG. 2 shows the principal axis n of refractive index of selenium-gallium-barium crystal in a 9 μm-11 μm long-wave infrared solid laser with temperature tuning according to an embodiment g 、n m 、n p The appearance of the direction representation and the relative relation of the pump light injection into the crystal; the graph shows that the light-passing surfaces at two ends of the selenium gallium barium crystal are perpendicular to the principal axis n of refractive index g The direction of the pump light is perpendicular to the crystal light-passing surface, and the polarization direction of the pump light is perpendicular to the refractive index principal axis n m Direction.
FIG. 3 is a graph showing the comparison of the wavelength and linewidth of a nonlinear crystal output long-wave infrared laser at different temperatures when a 2.05 μm nanosecond pulse laser is used as a pump source by a temperature-tuned 9 μm-11 μm long-wave infrared solid laser according to the embodiment; as can be seen from the graph, when the temperature of the selenium-gallium-barium crystal 7 is monotonically reduced from 45 ℃ to 5 ℃, the central wavelength of the long-wave infrared laser is monotonically increased from 9393.3nm to 10627.4nm, and the full width at half maximum of the line width is monotonically increased from 71.8nm to 166.1nm.
Fig. 4 is a graph of the variation of the output long-wave infrared laser power of nonlinear crystal with the pumping power at different temperatures when the temperature-tuned 9-11 μm long-wave infrared solid laser of the example uses 2.05 μm nanosecond pulse laser as the pumping source, ■ is 5 deg.c, 10 deg.c, 15 deg.c, 20 deg.c,25 ℃, diamond-solid-of-30 ℃, +35 ℃, -40 ℃; from the graph, when the temperature of the temperature-tuning selenium gallium barium (BGSe) crystal is 15 ℃, the pumping power is 4.0W, the highest average power of 200mW is realized, the central wavelength is 10.2 mu m long-wave infrared laser output, the slope efficiency is 8.04%, and the light-light conversion efficiency is 5.0%.
FIG. 5 is a plot of the variation of the long-wave infrared laser power with the crystal temperature under the condition of 4W of pumping power when the 2.05 μm nanosecond pulse laser is used as the pumping source by the temperature-tuned 9 μm-11 μm long-wave infrared solid laser according to the embodiment; as can be seen from the graph, the maximum output power of the idler light was 200mW when the nonlinear crystal temperature was 15 ℃.
FIG. 6 is a graph showing the comparison of the wavelength and linewidth of the nonlinear crystal output long-wave infrared laser at different temperatures when the 2.09 μm nanosecond pulse laser is used as the pumping source by the second embodiment of the temperature tuning 9 μm to 11 μm long-wave infrared solid laser. From the graph, when the temperature of the temperature-tuning selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, the central wavelength of the long-wave infrared laser is monotonically increased from 9379.8nm to 11071.7nm, and the full width at half maximum of the line width is reduced from 139.1nm to 85.3nm and then monotonically increased to 484.7nm.
Claims (10)
1. The temperature tuning 9-11 mu m long-wave infrared solid laser is characterized by comprising a first pumping source (1-1), a first plano-concave lens (2-1), a first plano-convex lens (3-1), a second pumping source (1-2), a second plano-concave lens (2-2), a second plano-convex lens (3-2), a first 45 DEG polaroid (4-1), a first half-wave plate (5-1), a second 45 DEG polaroid (4-2), a second half-wave plate (5-2), a 0 DEG plane OPO input mirror (6-1), a selenium-gallium-barium crystal (7), a semiconductor temperature controller (8), a 0 DEG plane OPO output mirror (6-2), a first 45 DEG long-wave infrared filter (9-1) and a second 45 DEG long-wave infrared filter (9-2);
the concave surface of the first plano-concave lens (2-1) is opposite to the convex surface of the first plano-convex lens (3-1), so that a first coupling system is formed; the concave surface of the second plano-concave lens (2-2) is opposite to the convex surface of the second plano-convex lens (3-2), so that a second coupling system is formed; the first 45-degree polaroid (4-1) is a polarization coupling system; the first half-wave plate (5-1) and the second 45-degree polaroid (4-2) form a power control system; the second half wave plate (5-2) is a pump light polarization state control system; the 0-degree plane OPO input mirror (6-1), the selenium gallium barium crystal (7), the semiconductor temperature controller (8) and the 0-degree plane OPO output mirror (6-2) form an optical parametric oscillator; the selenium gallium barium crystal (7) is fixed on the semiconductor temperature controller (8); the first 45-degree long-wave infrared filter (9-1) and the second 45-degree long-wave infrared filter (9-2) form a filter system;
starting the first pump source (1-1) or the second pump source (1-2);
when the first pump source (1-1) is started, the first pump source (1-1) emits horizontal polarized pump light, the horizontal polarized pump light enters the first coupling system in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polaroid (4-1) and passes through the first 45-degree polaroid (4-1), then enters the power control system, the angle of the first half wave plate (5-1) is regulated to enable the horizontal polarization state to be changed into a vertical polarization state, so as to obtain vertical polarized pump light, the vertical polarized pump light enters the second half wave plate (5-2) after being reflected by the second 45-degree polaroid (4-2), the angle of the second half wave plate (5-2) is regulated, and the polarization direction is parallel to the selenium gallium barium crystal (7) n m Pump light of refractive index principal axis;
when the second pump is startedWhen the source (1-2) is in a Pu mode, the second pump source (1-2) emits vertical polarized pump light, the vertical polarized pump light passes through the second coupling system and then enters the first 45-degree polaroid (4-1) in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polaroid (4-1), the vertical polarized pump light is reflected to the power control system through the first 45-degree polaroid (4-1), the angle of the first half wave plate (5-1) is regulated, the vertical polarized pump light passes through the first half wave plate (5-1) and then enters the second half wave plate (5-2) after being reflected by the second 45-degree polaroid (4-2), the angle of the second half wave plate (5-2) is regulated, and the polarized direction is parallel to the selenium gallium barium crystal (7) n-shaped wave is obtained m Pump light of refractive index principal axis;
the polarization direction is parallel to the selenium gallium barium crystal (7) n m The pump light with the principal refractive index passes through the 0-degree plane OPO input mirror (6-1) and is incident to the selenium gallium barium crystal (7), and the selenium gallium barium crystal (7) leads part of the polarization direction to be parallel to the selenium gallium barium crystal (7) n m Performing optical nonlinear frequency conversion on the pump light with the refractive index spindle to obtain signal light with the wavelength of 2.5-2.65 mu m and idler light with the wavelength of 9-11 mu m;
the signal light with the wavelength of 2.5-2.65 μm is incident to the 0-degree plane OPO output mirror (6-2) and totally reflected, reversely passes through the selenium gallium barium crystal (7), then is incident to the 0-degree plane OPO input mirror (6-1), is reflected by the 0-degree plane OPO input mirror (6-1) and passes through the selenium gallium barium crystal (7) again, and then repeatedly oscillates in the cavity without output; idler frequency light with the wavelength of 9-11 μm is output from the optical parametric oscillator through a 0-degree plane OPO output mirror (6-2); idler light and residual polarization direction outputted from the optical parametric oscillator are parallel to the selenium gallium barium crystal (7) n m The pump light with the main refractive index axis is incident to a filtering system, and the residual polarization direction is parallel to the selenium gallium barium crystal (7) n m The pump light of the refractive index main shaft is output through a first 45-degree long-wave infrared filter (9-1), and idler frequency light output by the optical parametric oscillator is sequentially reflected and output through the first 45-degree long-wave infrared filter (9-1) and a second 45-degree long-wave infrared filter (9-2), so that 9-11 mu m long-wave infrared laser is obtained.
2. A temperature-tuned 9-11 μm long-wave infrared solid-state laser according to claim 1, characterized in that said first pump source (1-1) is a pulsed laser with a wavelength of 2.09 μm or 2.12 μm, a pulse width of femtosecond, picosecond or nanosecond; the second pump source (1-2) is a pulse laser with a wavelength of 2.02 μm or 2.05 μm and a pulse width of femtosecond, picosecond or nanosecond.
3. The temperature-tuned 9-11 μm long-wave infrared solid laser according to claim 1, wherein the light-passing surfaces of the first plano-concave lens (2-1), the first plano-convex lens (3-1), the second plano-concave lens (2-2) and the second plano-convex lens (3-2) are coated with an antireflection film of 2.02-2.12 μm; the curvature radius of the first plano-concave lens (2-1) and the curvature radius of the second plano-concave lens (2-2) are-50 mm to-200 mm, and the diameters are 10mm to 100mm; the focal lengths of the first plano-convex lens (3-1) and the second plano-convex lens (3-2) are 50 mm-1000 mm, and the diameters of the first plano-convex lens and the second plano-convex lens are 10 mm-100 mm.
4. A temperature-tuned 9-11 μm long-wave infrared solid-state laser according to claim 1, characterized in that the surface of said first 45 ° polarizer (4-1) is coated with a film having a vertical polarization state laser light reflectance of more than 99% for wavelengths 2.02-2.05 μm and a horizontal polarization state laser light reflectance of less than 70% for wavelengths 2.02-2.05 μm, and simultaneously with a film having a horizontal polarization state laser light transmittance of more than 99% for wavelengths 2.09-2.12 μm and a vertical polarization state laser light transmittance of less than 20% for wavelengths 2.09-2.12 μm.
5. A temperature-tuned 9-11 μm long-wave infrared solid-state laser according to claim 1, characterized in that the surface of said second 45 ° polarizer (4-2) is coated with a film having a vertical polarization laser reflectivity of more than 99.5% for wavelengths 2.02-2.12 μm and a horizontal polarization laser transmissivity of more than 99.5% for wavelengths 2.02-2.12 μm.
6. The temperature-tuned 9-11 μm long-wave infrared solid laser according to claim 1, wherein the first half-wave plate (5-1) and the second half-wave plate (5-2) are broadband wave plates with wavelengths of 2.02-2.12 μm, and the light-transmitting surfaces are plated with antireflection films of 2.02-2.12 μm.
7. The temperature-tuned 9-11 μm long-wave infrared solid laser according to claim 1, wherein one surface of the 0-degree plane OPO input mirror (6-1) and one surface of the 0-degree plane OPO output mirror (6-2) are coated with an antireflection film for pumping light with the wavelength of 2.02-2.12 μm and idler light with the wavelength of 9-11 μm, and the other surface is coated with a dielectric film with the signal light reflectivity of more than 99% for the wavelength of 2.5-2.65 μm.
8. The temperature-tuned 9-11 μm long-wave infrared solid laser according to claim 1, characterized in that said selenium gallium barium crystal (7) has a light-passing surface perpendicular to crystal n g Refractive index principal axis.
9. The temperature-tuned 9-11 μm long-wave infrared solid laser according to claim 1, wherein the semiconductor temperature controller (8) is a TEC temperature controller, the temperature is continuously tunable within the range of 0-45 ℃, and the control precision is +/-0.1 ℃.
10. The temperature-tuned 9-11 μm long-wave infrared solid laser according to claim 1, wherein the first 45 ° long-wave infrared filter (9-1) and the second 45 ° long-wave infrared filter (9-2) are coated with a pumping light antireflection film with the wavelength of 2.02-2.12 μm on one side and a dielectric film with the idler frequency light reflectance of 9-11 μm of more than 95% on the other side.
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