CN114188812A - Temperature-tuned 9-11-micrometer long-wave infrared solid laser - Google Patents
Temperature-tuned 9-11-micrometer long-wave infrared solid laser Download PDFInfo
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 58
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 58
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 58
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- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1028—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
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Abstract
A temperature tuning 9-11 mu m long-wave infrared solid laser relates to a solid laser. The problems that when 9-11 mu m laser output is realized through an optical nonlinear frequency conversion method based on the existing short wave pumping source, the conversion efficiency from pumping light to idler frequency light is low and light beam deviation occurs in the wavelength tuning process are solved. The temperature-tuned 9-11 μm long-wave infrared solid laser comprises a first pump source, a first coupling system, a second pump source, a second coupling system, a power control system, a pump light polarization state control system, an optical parametric oscillator and a filter system. The invention is used for temperature tuning of a 9-11 mu m long-wave infrared solid laser.
Description
Technical Field
The present invention relates to a solid laser.
Background
The long-wave infrared laser with the wave band of 9-11 microns is positioned in an atmosphere transmission window, and has wide and important application value in the fields of space communication, infrared guidance, infrared countermeasure, medical treatment, laser radar and the like. The currently effective method for obtaining 9-11 μm band laser is to perform frequency down-conversion on 2 μm band laser by optical nonlinear frequency conversion. However, on the basis of the existing short-wave pump source, when 9-11 μm laser output is realized by an optical nonlinear frequency conversion method, the included angle between the injected pump light wave vector and the principal axis of the refractive index of the nonlinear crystal is not zero, so that the included angle (walk-off angle) between signal light and idler light generated in the nonlinear crystal is not equal to zero, and the adverse effects of low conversion efficiency from the pump light to the idler light and beam offset in the process of tuning the wavelength are brought.
Disclosure of Invention
The invention aims to solve the problems of low conversion efficiency from pump light to idler frequency light and beam deviation in the wavelength tuning process when the output of 9-11 mu m laser is realized by an optical nonlinear frequency conversion method based on the existing short wave pumping source, and provides a temperature tuning 9-11 mu m long-wave infrared solid laser.
A temperature-tuned 9-11 mu m long-wave infrared solid laser comprises a first pumping source, a first plano-concave lens, a first plano-convex lens, a second pumping source, a second plano-concave lens, a second plano-convex lens, a first 45-degree polaroid, a first one-half wave plate, a second 45-degree polaroid, a second one-half wave plate, a 0-degree plane OPO input mirror, a selenium gallium barium crystal, a semiconductor temperature controller, a 0-degree plane OPO output mirror, a first 45-degree long-wave infrared filter and a second 45-degree long-wave infrared filter;
the concave surface of the first plano-concave lens is opposite to the convex surface of the first plano-convex lens to form a first coupling system; the concave surface of the second plano-concave lens is opposite to the convex surface of the second plano-convex lens to form a second coupling system; the first 45-degree polaroid is a polarization coupling system; the first quarter-wave plate and the second 45-degree polaroid form a power control system; the second half wave plate is a pumping light polarization state control system; the 0-degree plane OPO input mirror, the selenium-gallium-barium crystal, the semiconductor temperature controller and the 0-degree plane OPO output mirror form an optical parametric oscillator; the selenium-gallium-barium crystal is fixed on a semiconductor temperature controller; the first 45-degree long wave infrared filter and the second 45-degree long wave infrared filter form a filter system;
starting the first pump source or the second pump source;
when the first pump source is started, the first pump source emits horizontal polarization state pump light, the horizontal polarization state pump light passes through the first coupling system, enters the first 45-degree polarizer in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polarizer, enters the power control system, the angle of the first half wave plate is adjusted, the horizontal polarization state is changed into a vertical polarization state, the vertical polarization state pump light is obtained, the vertical polarization state pump light is reflected by the second 45-degree polarizer, enters the second half wave plate, the angle of the second half wave plate is adjusted, and the polarization direction parallel to the selenium gallium barium crystal n is obtainedmPump light of the principal axis of refractive index;
when the second pump source is started, the second pump source emits pumping light in a vertical polarization state, the pumping light in the vertical polarization state passes through the second coupling system, enters the first 45-degree polaroid in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polaroid, is reflected to the power control system through the first 45-degree polaroid, the angle of the first half wave plate is adjusted, the pumping light in the vertical polarization state passes through the first half wave plate, is reflected by the second 45-degree polaroid, enters the second half wave plate, the angle of the second half wave plate is adjusted, and the fact that the polarization direction is parallel to the selenium gallium barium crystal n is obtainedmPump light of the principal axis of refractive index;
the polarization direction is parallel to the selenium gallium barium crystal nmThe pump light of the main axis of the refractive index is input into the selenium gallium barium crystal through the 0-degree plane OPO input mirror and is incident to the selenium gallium barium crystal, and the partial polarization direction of the selenium gallium barium crystal is parallel to the n-degree plane OPO input mirrormPerforming optical nonlinear frequency conversion on the pump light of the refractive index main shaft to obtain signal light with the wavelength of 2.5-2.65 μm and idler light with the wavelength of 9-11 μm;
the signal light with the wavelength between 2.5 mu m and 2.65 mu m is incident to a 0-degree plane OPO output mirror and totally reflected, reversely passes through the selenium-gallium-barium crystal and then is incident toThe 0-degree plane OPO input mirror is reflected by the 0-degree plane OPO input mirror and passes through the selenium-gallium-barium crystal again, so that the crystal is repeatedly oscillated in the cavity without output; the idler frequency light with the wavelength between 9 mu m and 11 mu m is output from the optical parametric oscillator through a 0-degree plane OPO output mirror; the idler frequency and the residual polarization direction output from the optical parametric oscillator are parallel to the selenium gallium barium crystal nmThe pump light with the main axis of refractive index is incident to the filter system, and the residual polarization direction is parallel to the selenium-gallium-barium crystal nmThe pump light of the refractive index main shaft is output through the first 45-degree long wave infrared filter, and the idle frequency light output by the optical parametric oscillator is reflected and output through the first 45-degree long wave infrared filter and the second 45-degree long wave infrared filter in sequence to obtain 9-11 mu m long wave infrared laser.
The invention has the advantages that:
the invention provides a new design scheme for obtaining 9-11 mu m long-wave infrared laser under the condition that the temperature of a nonlinear crystal is 5-45 ℃ and the walk-off effect is avoided. According to the invention, free switching of different pump sources with wavelengths between 2.02 and 2.12 microns is realized in a pump light polarization coupling mode, and 9-11 micron long-wave infrared laser output with high conversion efficiency from pump light to idler frequency light, no walk-off and wide wavelength tuning range is realized within the temperature range of 5-45 ℃ of the nonlinear crystal.
Experiments show that when the wavelength of the pump light is 2.05 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9393.3nm to 10627.4 nm. When the average input pump light power is 4.0W, the laser output with the central wavelength of 10.2 μm of 200mW is obtained at most, the conversion slope efficiency from the pump light to the idler frequency light reaches 8.03 percent, and the light-light conversion efficiency reaches 5 percent, which shows that the conversion efficiency from the pump light to the idler frequency light is successfully improved. When the wavelength of the pump light is 2.09 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9379.8nm to 11071.7 nm. Therefore, compared with the scheme of obtaining the long-wave infrared band laser with the wavelength of 9-11 microns by using the nonlinear crystal with the non-zero walk-off angle, the method can realize the effect of tuning the wavelength of 9-11 microns within the range of 5-45 ℃ of the nonlinear crystal.
In the invention, pumping light wave vector is incident perpendicular to the end face of a selenium gallium barium (BGSe) crystal and parallel to a crystal ngThe refractive index main shaft only changes the temperature of the nonlinear crystal in the process of tuning the idler frequency light, and the generated signal light, the idler frequency light and the pump light can be known to be collinear according to the law of refraction, so that beam deviation cannot occur.
Drawings
FIG. 1 is a schematic structural diagram of a long-wave infrared solid-state laser with temperature tuned to 9 μm-11 μm according to the present invention;
FIG. 2 shows the temperature tuned 9-11 μm long-wave infrared solid laser device with the selenium, gallium and barium crystals according to the principal axis n of refractive indexg、nm、npThe appearance of the direction representation and the relative relationship of the pump light injected into the crystal;
FIG. 3 is a graph showing the comparison between the wavelength and the line width of a long-wavelength infrared laser with a temperature tuned 9 μm to 11 μm, when a 2.05 μm nanosecond pulse laser is used as a pumping source, at different temperatures, a nonlinear crystal outputs a long-wavelength infrared laser;
FIG. 4 is a graph showing the variation of the output power of a nonlinear crystal at different temperatures with pumping power when a 9 μm-11 μm long-wave infrared solid-state laser tuned to a temperature is used as a pumping source and 2.05 μm nanosecond pulse laser, wherein ■ is 5 ℃, ● is 10 ℃, tangle-solidup is 15 ℃ and t is 20 ℃,
at 25 deg.C, at 30 deg.C, + 35 deg.C, and-40 deg.C;
FIG. 5 is a scattergram of the power of a long-wave infrared laser with a pump power of 4W as a function of the temperature of a crystal, when a temperature-tuned 9 μm-11 μm long-wave infrared solid-state laser of the embodiment uses 2.05 μm nanosecond pulse laser as a pump source;
FIG. 6 is a graph showing the wavelength and the line width of the long-wavelength infrared laser with wavelength tuned to 9 μm to 11 μm in the second embodiment when the 2.09 μm nanosecond pulse laser is used as the pumping source, the nonlinear crystal outputs the long-wavelength infrared laser at different temperatures.
Detailed Description
The first embodiment is as follows: referring to fig. 1, a temperature-tuned 9 μm to 11 μm long-wave infrared solid-state laser according to this embodiment includes a first pump source 1-1, a first plano-concave lens 2-1, a first plano-convex lens 3-1, a second pump source 1-2, a second plano-concave lens 2-2, a second plano-convex lens 3-2, a first 45 ° polarizer 4-1, a first one-half wave plate 5-1, a second 45 ° polarizer 4-2, a second one-half wave plate 5-2, a 0 ° plane OPO input lens 6-1, a selenium gallium barium crystal 7, a semiconductor temperature controller 8, a 0 ° plane OPO output lens 6-2, a first 45 ° long-wave infrared filter 9-1, and a second 45 ° long-wave infrared filter 9-2;
the concave surface of the first plano-concave lens 2-1 and the convex surface of the first plano-convex lens 3-1 are oppositely arranged to form a first coupling system; the concave surface of the second plano-concave lens 2-2 and the convex surface of the second plano-convex lens 3-2 are oppositely arranged to form a second coupling system; the first 45-degree polaroid 4-1 is a polarization coupling system; the first quarter-wave plate 5-1 and the second 45-degree polaroid 4-2 form a power control system; the second half wave plate 5-2 is a pumping light polarization state control system; the 0-degree plane OPO input mirror 6-1, the selenium gallium barium crystal 7, the semiconductor temperature controller 8 and the 0-degree plane OPO output mirror 6-2 form an optical parametric oscillator; the selenium-gallium-barium crystal 7 is fixed on a semiconductor temperature controller 8; the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 form a filter system;
starting a first pump source 1-1 or a second pump source 1-2;
when the first pump source 1-1 is started, the first pump source 1-1 emits horizontal polarization state pump light, the horizontal polarization state pump light passes through the first coupling system, enters in the direction forming an angle of 45 degrees with the normal line of the first 45-degree polaroid 4-1, passes through the first 45-degree polaroid 4-1, enters the power control system, the angle of the first half wave plate 5-1 is adjusted, the horizontal polarization state is changed into a vertical polarization state, the vertical polarization state pump light is obtained, the vertical polarization state pump light is reflected by the second 45-degree polaroid 4-2, enters the second half wave plate 5-2, the angle of the second half wave plate 5-2 is adjusted, and the selenium gallium barium crystal 7n with the polarization direction parallel to the selenium gallium barium crystal 7n is obtainedmPump with refractive index spindleLight is projected;
when the second pump source 1-2 is started, the second pump source 1-2 emits pumping light in a vertical polarization state, the pumping light in the vertical polarization state passes through the second coupling system, enters the first 45-degree polarizer 4-1 in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polarizer 4-1, is reflected to the power control system through the first 45-degree polarizer 4-1, the angle of the first half-wave plate 5-1 is adjusted, the pumping light in the vertical polarization state passes through the first half-wave plate 5-1, is reflected by the second 45-degree polarizer 4-2 and then enters the second half-wave plate 5-2, the angle of the second half-wave plate 5-2 is adjusted, and the fact that the polarization direction is parallel to the selenium gallium barium crystal 7n is obtainedmPump light of the principal axis of refractive index;
the polarization direction is parallel to the selenium gallium barium crystal 7nmThe pump light of the main axis of the refractive index passes through a 0-degree plane OPO input mirror 6-1 and enters the selenium gallium barium crystal 7, and the selenium gallium barium crystal 7 enables part of the polarization direction to be parallel to the selenium gallium barium crystal 7nmPerforming optical nonlinear frequency conversion on the pump light of the refractive index main shaft to obtain signal light with the wavelength of 2.5-2.65 μm and idler light with the wavelength of 9-11 μm;
the signal light with the wavelength between 2.5 and 2.65 mu m is incident to a 0-degree plane OPO output mirror 6-2 and is totally reflected, reversely passes through a selenium gallium barium crystal 7, then is incident to a 0-degree plane OPO input mirror 6-1, is reflected by the 0-degree plane OPO input mirror 6-1 and passes through the selenium gallium barium crystal 7 again, and then repeatedly oscillates in the cavity without being output; idler frequency light with the wavelength of 9-11 mu m is output from the optical parametric oscillator through a 0-degree plane OPO output mirror 6-2; the idler frequency and the residual polarization direction output from the optical parametric oscillator are parallel to the selenium gallium barium crystal 7nmThe pump light with the main axis of refractive index is incident to the filter system, and the residual polarization direction is parallel to the selenium-gallium-barium crystal 7nmThe pump light of the main shaft of the refractive index is output through a first 45-degree long-wave infrared filter 9-1, and the idle-frequency light output by the optical parametric oscillator is reflected and output through the first 45-degree long-wave infrared filter 9-1 and a second 45-degree long-wave infrared filter 9-2 in sequence to obtain long-wave infrared laser of 9-11 microns.
In this embodiment, the first one-half wave plate 5-1 is a broadband wave plate, and only the first one-half wave plate needs to be slightly rotated in the process of switching the pump sourceThe pumping light in the horizontal polarization state can be completely changed into the vertical polarization state by the angle of the half wave plate 5-1, or the vertical polarization state is directly transmitted and reaches the second half wave plate 5-2; similarly, by slightly rotating the second half 5-2 wave plate angle, the polarization direction of the pumping light can be made parallel to n of the selenium gallium barium crystal 7 fixed on the semiconductor temperature controller 8mA principal axis of refractive index; the second pump source 1-2 optical parametric oscillator and the filtering system are constructed and operate in exactly the same manner as when the first pump source 1-1 is used.
The beneficial effects of the embodiment are as follows:
the specific embodiment provides a new design scheme for obtaining 9-11 mu m long-wave infrared laser under the condition that the temperature of the nonlinear crystal is 5-45 ℃ and the walk-off effect is avoided. According to the invention, free switching of different pump sources with wavelengths between 2.02 and 2.12 microns is realized in a pump light polarization coupling mode, and 9-11 micron long-wave infrared laser output with high conversion efficiency from pump light to idler frequency light, no walk-off and wide wavelength tuning range is realized within the temperature range of 5-45 ℃ of the nonlinear crystal.
Experiments show that when the wavelength of the pump light is 2.05 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9393.3nm to 10627.4 nm. When the average input pump light power is 4.0W, the laser output with the central wavelength of 10.2 μm of 200mW is obtained at most, the conversion slope efficiency from the pump light to the idler frequency light reaches 8.03 percent, and the light-light conversion efficiency reaches 5 percent, which shows that the conversion efficiency from the pump light to the idler frequency light is successfully improved. When the wavelength of the pump light is 2.09 mu m, the temperature of the selenium gallium barium (BGSe) crystal is monotonically reduced from 45 ℃ to 5 ℃, and the central wavelength of the long-wave infrared laser is monotonically increased from 9379.8nm to 11071.7 nm. Therefore, compared with the scheme of obtaining the long-wave infrared band laser with the wavelength of 9-11 microns by using the nonlinear crystal with the non-zero walk-off angle, the method can realize the effect of tuning the wavelength of 9-11 microns within the range of 5-45 ℃ of the nonlinear crystal.
In this embodiment, the pumping light wave vector is incident perpendicular to the end face of the selenium gallium barium (BGSe) crystal and parallel to the n crystalgThe refractive index main shaft only changes the temperature of the nonlinear crystal in the process of tuning the idler frequency light, and the generated signal light, the idler frequency light and the pump light can be known to be collinear according to the law of refraction, so that beam deviation cannot occur.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the first pumping source 1-1 is a pulse laser with the wavelength of 2.09 μm or 2.12 μm and the pulse width of femtosecond, picosecond or nanosecond; the second pump source 1-2 is a pulse laser with a wavelength of 2.02 μm or 2.05 μm and a pulse width of femtosecond, picosecond or nanosecond. The rest is the same as the first embodiment.
The third concrete implementation mode: this embodiment is different from the first or second embodiment in that: the light transmission surfaces of the first plano-concave lens 2-1, the first plano-convex lens 3-1, the second plano-concave lens 2-2 and the second plano-convex lens 3-2 are plated with antireflection films of 2.02-2.12 mu m; the curvature radiuses of the first plano-concave lens 2-1 and the second plano-concave lens 2-2 are both-50 mm to-200 mm, and the diameters of the first plano-concave lens and the second plano-concave lens are both 10mm to 100 mm; the focal length of the first plano-convex lens 3-1 and the focal length of the second plano-convex lens 3-2 are both 50 mm-1000 mm, and the diameter of the first plano-convex lens is both 10 mm-100 mm. The other is the same as in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: the surface of the first 45-degree polaroid 4-1 is plated with a film with the vertical polarization state laser reflectivity of 2.02-2.05 mu m of wavelength more than 99% and the horizontal polarization state laser reflectivity of 2.02-2.05 mu m of wavelength less than 70%, and simultaneously plated with a film with the horizontal polarization state laser transmissivity of 2.09-2.12 mu m of wavelength more than 99% and the vertical polarization state laser transmissivity of 2.09-2.12 mu m of wavelength less than 20%. The others are the same as the first to third embodiments.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: the surface of the second 45-degree polaroid 4-2 is plated with a film with the vertical polarization state laser reflectivity of 2.02-2.12 mu m of wavelength being more than 99.5 percent and the horizontal polarization state laser transmissivity of 2.02-2.12 mu m of wavelength being more than 99.5 percent. The rest is the same as the first to fourth embodiments.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is: the first half wave plate 5-1 and the second half wave plate 5-2 are broadband wave plates with the wavelength of 2.02-2.12 mu m, and the light transmission surfaces are both plated with antireflection films with the wavelength of 2.02-2.12 mu m. The rest is the same as the first to fifth embodiments.
The seventh embodiment: the difference between this embodiment and one of the first to sixth embodiments is: one side of the 0-degree plane OPO input mirror 6-1 and the 0-degree plane OPO output mirror 6-2 is plated with an idler frequency light reflection reducing coating for pumping light with the wavelength of 2.02-2.12 mu m and for signal light with the wavelength of 9-11 mu m, and the other side is plated with a dielectric film with the reflectivity of more than 99 percent for signal light with the wavelength of 2.5-2.65 mu m. The others are the same as the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment differs from one of the first to seventh embodiments in that: the selenium gallium barium crystal 7 is a crystal n with a light-passing surface vertical to the crystal ngThe principal axis of the refractive index. The rest is the same as the first to seventh embodiments.
The specific implementation method nine: the present embodiment differs from the first to eighth embodiments in that: the semiconductor temperature controller 8 is a TEC temperature controller, the temperature can be continuously adjusted within the range of 0-45 ℃, the control precision is +/-0.1 ℃, and the control precision is +/-0.1 ℃. The other points are the same as those in the first to eighth embodiments.
In the TEC temperature controller according to this embodiment, direct current is used to generate the phenomena of the "hot" side and the "cold" side on the ceramic electrodes through the P-type and N-type pairs sandwiched between the two ceramic electrodes, and the selenium gallium barium crystal 7 is placed on the "cold" side, so that the temperature of the nonlinear crystal is accurately controlled.
The detailed implementation mode is ten: the present embodiment differs from one of the first to ninth embodiments in that: the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 are respectively coated with a pumping light antireflection film with the wavelength of 2.02-2.12 mu m on one surface and a dielectric film with the idle frequency light reflectivity of 9-11 mu m on the other surface, wherein the reflectivity of the idle frequency light is more than 95%. The other points are the same as those in the first to ninth embodiments.
The following examples were used to demonstrate the beneficial effects of the present invention:
the first embodiment is as follows:
a temperature-tuned 9-11 mu m long-wave infrared solid laser comprises a first pumping source 1-1, a first plano-concave lens 2-1, a first plano-convex lens 3-1, a second pumping source 1-2, a second plano-concave lens 2-2, a second plano-convex lens 3-2, a first 45-degree polaroid 4-1, a first one-second wave plate 5-1, a second 45-degree polaroid 4-2, a second one-second wave plate 5-2, a 0-degree plane OPO input lens 6-1, a selenium gallium barium crystal 7, a semiconductor temperature controller 8, a 0-degree plane OPO output lens 6-2, a first 45-degree long-wave infrared filter 9-1 and a second 45-degree long-wave infrared filter 9-2;
the concave surface of the first plano-concave lens 2-1 and the convex surface of the first plano-convex lens 3-1 are oppositely arranged to form a first coupling system; the concave surface of the second plano-concave lens 2-2 and the convex surface of the second plano-convex lens 3-2 are oppositely arranged to form a second coupling system; the first 45-degree polaroid 4-1 is a polarization coupling system; the first quarter-wave plate 5-1 and the second 45-degree polaroid 4-2 form a power control system; the second half wave plate 5-2 is a pumping light polarization state control system; the 0-degree plane OPO input mirror 6-1, the selenium gallium barium crystal 7, the semiconductor temperature controller 8 and the 0-degree plane OPO output mirror 6-2 form an optical parametric oscillator; the selenium-gallium-barium crystal 7 is fixed on a semiconductor temperature controller 8; the first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 form a filter system;
starting a second pump source 1-2, emitting vertical polarization state pump light from the second pump source 1-2, allowing the vertical polarization state pump light to pass through a second coupling system, then allowing the vertical polarization state pump light to enter a first 45-degree polaroid 4-1 in a direction forming an angle of 45 degrees with a normal line of the first 45-degree polaroid 4-1, reflecting the vertical polarization state pump light to a power control system through the first 45-degree polaroid 4-1, adjusting the angle of a first half wave plate 5-1, allowing the vertical polarization state pump light to pass through the first half wave plate 5-1, then reflecting the vertical polarization state pump light through a second 45-degree polaroid 4-2, allowing the vertical polarization state pump light to enter a second half wave plate 5-2, adjusting the angle of the second half wave plate 5-2, and obtaining a pump light with the polarization direction parallel to the selenium gallium barium crystal 7 nGaba crystal 7nmPump light of the principal axis of refractive index;
method of polarizationTo be parallel to the selenium gallium barium crystal 7nmThe pump light of the main axis of the refractive index passes through a 0-degree plane OPO input mirror 6-1 and enters the selenium gallium barium crystal 7, and the selenium gallium barium crystal 7 enables part of the polarization direction to be parallel to the selenium gallium barium crystal 7nmPerforming optical nonlinear frequency conversion on the pump light of the refractive index main shaft to obtain signal light with the wavelength of 2.5-2.65 μm and idler light with the wavelength of 9-11 μm;
the signal light with the wavelength between 2.5 and 2.65 mu m is incident to a 0-degree plane OPO output mirror 6-2 and is totally reflected, reversely passes through a selenium gallium barium crystal 7, then is incident to a 0-degree plane OPO input mirror 6-1, is reflected by the 0-degree plane OPO input mirror 6-1 and passes through the selenium gallium barium crystal 7 again, and then repeatedly oscillates in the cavity without being output; idler frequency light with the wavelength of 9-11 mu m is output from the optical parametric oscillator through a 0-degree plane OPO output mirror 6-2; the idler frequency and the residual polarization direction output from the optical parametric oscillator are parallel to the selenium gallium barium crystal 7nmThe pump light with the main axis of refractive index is incident to the filter system, and the residual polarization direction is parallel to the selenium-gallium-barium crystal 7nmThe pump light of the main shaft of the refractive index is output through a first 45-degree long-wave infrared filter 9-1, and the idle-frequency light output by the optical parametric oscillator is reflected and output through the first 45-degree long-wave infrared filter 9-1 and a second 45-degree long-wave infrared filter 9-2 in sequence to obtain long-wave infrared laser of 9-11 microns.
The second pump source 1-2 is a pulse laser with a wavelength of 2.05 μm and a pulse width of nanosecond.
The light transmission surfaces of the first plano-concave lens 2-1, the first plano-convex lens 3-1, the second plano-concave lens 2-2 and the second plano-convex lens 3-2 are plated with antireflection films of 2.02-2.12 mu m; the curvature radiuses of the first plano-concave lens 2-1 and the second plano-concave lens 2-2 are both-100 mm, and the diameters of the first plano-concave lens and the second plano-concave lens are both 20 mm; the focal length of the first plano-convex lens 3-1 and the focal length of the second plano-convex lens 3-2 are both 100mm, and the diameters thereof are both 20 mm.
The surface of the first 45-degree polaroid 4-1 is plated with a film with the vertical polarization state laser reflectivity of 2.02-2.05 mu m of wavelength more than 99% and the horizontal polarization state laser reflectivity of 2.02-2.05 mu m of wavelength less than 70%, and simultaneously plated with a film with the horizontal polarization state laser transmissivity of 2.09-2.12 mu m of wavelength more than 99% and the vertical polarization state laser transmissivity of 2.09-2.12 mu m of wavelength less than 20%.
The surface of the second 45-degree polaroid 4-2 is plated with a film with the vertical polarization state laser reflectivity of 2.02-2.12 mu m of wavelength being more than 99.5 percent and the horizontal polarization state laser transmissivity of 2.02-2.12 mu m of wavelength being more than 99.5 percent.
The first half wave plate 5-1 and the second half wave plate 5-2 are broadband wave plates with the wavelength of 2.02-2.12 mu m, and the light transmission surfaces are both plated with antireflection films with the wavelength of 2.02-2.12 mu m.
One side of the 0-degree plane OPO input mirror 6-1 and the 0-degree plane OPO output mirror 6-2 is plated with an idler frequency light reflection reducing coating for pumping light with the wavelength of 2.02-2.12 mu m and for signal light with the wavelength of 9-11 mu m, and the other side is plated with a dielectric film with the reflectivity of more than 99 percent for signal light with the wavelength of 2.5-2.65 mu m.
The selenium gallium barium crystal 7 is a crystal n with a light-passing surface vertical to the crystal ngThe principal axis of the refractive index.
The semiconductor temperature controller 8 is a TEC temperature controller, the temperature can be continuously tunable within the range of 5-45 ℃, and the control precision is +/-0.1 ℃.
The first 45-degree long-wave infrared filter 9-1 and the second 45-degree long-wave infrared filter 9-2 are respectively coated with a pumping light antireflection film with the wavelength of 2.02-2.12 mu m on one surface and a dielectric film with the idle frequency light reflectivity of 9-11 mu m on the other surface, wherein the reflectivity of the idle frequency light is more than 95%.
Example two: the difference between the present embodiment and the first embodiment is: starting a first pump source 1-1, emitting a horizontal polarization state pump light from the first pump source 1-1, after passing through a first coupling system, entering the horizontal polarization state pump light in a direction forming an angle of 45 degrees with a normal line of a first 45-degree polaroid 4-1, passing through the first 45-degree polaroid 4-1, then entering a power control system, adjusting the angle of a first half wave plate 5-1 to enable the horizontal polarization state to be changed into a vertical polarization state to obtain a vertical polarization state pump light, reflecting the vertical polarization state pump light through a second 45-degree polaroid 4-2, then entering a second half wave plate 5-2, adjusting the angle of the second half wave plate 5-2 to obtain a pump light with the polarization direction parallel to a selenium gallium barium crystal 7nmPump light of the principal axis of refractive index; the first pump source 1-1 has a wavelength of 2.09 μm, pulse width nanosecond. The rest is the same as the first embodiment.
FIG. 2 shows the temperature tuned 9-11 μm long-wave infrared solid laser device with the selenium, gallium and barium crystals according to the principal axis n of refractive indexg、nm、npThe appearance of the direction representation and the relative relationship of the pump light injected into the crystal; as can be seen from the figure, the light-passing surfaces at two ends of the selenium-gallium-barium crystal are vertical to the principal axis n of the refractive indexgThe direction of pump light injected perpendicular to the light passing surface of the crystal and the polarization direction of pump light perpendicular to the principal axis n of refractive indexmAnd (4) direction.
FIG. 3 is a graph showing the comparison between the wavelength and the line width of a long-wavelength infrared laser with a temperature tuned 9 μm to 11 μm, when a 2.05 μm nanosecond pulse laser is used as a pumping source, at different temperatures, a nonlinear crystal outputs a long-wavelength infrared laser; as can be seen from the figure, when the temperature of the selenium gallium barium crystal 7 is monotonically reduced from 45 ℃ to 5 ℃, the central wavelength of the long-wave infrared laser is monotonically increased from 9393.3nm to 10627.4nm, and the full width at half maximum of the line width is monotonically increased from 71.8nm to 166.1 nm.
FIG. 4 is a graph showing the variation of the output power of a nonlinear crystal at different temperatures with pumping power when a 9 μm-11 μm long-wave infrared solid-state laser tuned to a temperature is used as a pumping source and 2.05 μm nanosecond pulse laser, wherein ■ is 5 ℃, ● is 10 ℃, tangle-solidup is 15 ℃ and t is 20 ℃,
at 25 deg.C, at 30 deg.C, + 35 deg.C, and-40 deg.C; it can be seen from the figure that when the temperature of the temperature tuned selenium gallium barium (BGSe) crystal is 15 ℃ and the pumping power is 4.0W, the maximum average power of 200mW, the central wavelength of 10.2 μm long-wavelength infrared laser output is realized, the slope efficiency is 8.04%, and the light-light conversion efficiency is 5.0%.
FIG. 5 is a scattergram of the power of a long-wave infrared laser with a pump power of 4W as a function of the temperature of a crystal, when a temperature-tuned 9 μm-11 μm long-wave infrared solid-state laser of the embodiment uses 2.05 μm nanosecond pulse laser as a pump source; as can be seen from the graph, the maximum output power of the idler light is 200mW when the temperature of the nonlinear crystal is 15 ℃.
FIG. 6 is a graph showing the wavelength and the line width of the long-wavelength infrared laser with wavelength tuned to 9 μm to 11 μm in the second embodiment when the 2.09 μm nanosecond pulse laser is used as the pumping source, the nonlinear crystal outputs the long-wavelength infrared laser at different temperatures. As can be seen, when the temperature of the temperature-tuned selenium gallium barium (BGSe) crystal is monotonically decreased from 45 ℃ to 5 ℃, the central wavelength of the long-wave infrared laser is monotonically increased from 9379.8nm to 11071.7nm, and the full width at half maximum of the line width is decreased from 139.1nm to 85.3nm and then monotonically increased to 484.7 nm.
Claims (10)
1. A temperature-tuned 9-11 mu m long-wave infrared solid laser is characterized by comprising a first pumping source (1-1), a first plano-concave lens (2-1), a first plano-convex lens (3-1), a second pumping source (1-2), a second plano-concave lens (2-2), a second plano-convex lens (3-2), a first 45-degree polaroid (4-1) and a first one-second wave plate (5-1), a second 45-degree polarizing film (4-2), a second half wave plate (5-2), a 0-degree plane OPO input mirror (6-1), a selenium gallium barium crystal (7), a semiconductor temperature controller (8), a 0-degree plane OPO output mirror (6-2), a first 45-degree long wave infrared filter (9-1) and a second 45-degree long wave infrared filter (9-2);
the concave surface of the first plano-concave lens (2-1) is opposite to the convex surface of the first plano-convex lens (3-1) to form a first coupling system; the concave surface of the second plano-concave lens (2-2) is opposite to the convex surface of the second plano-convex lens (3-2) to form a second coupling system; the first 45-degree polaroid (4-1) is a polarization coupling system; the first one-half wave plate (5-1) and the second 45-degree polaroid (4-2) form a power control system; the second half wave plate (5-2) is a pumping light polarization state control system; the 0-degree plane OPO input mirror (6-1), the selenium gallium barium crystal (7), the semiconductor temperature controller (8) and the 0-degree plane OPO output mirror (6-2) form an optical parametric oscillator; the selenium-gallium-barium crystal (7) is fixed on a semiconductor temperature controller (8); the first 45-degree long-wave infrared filter (9-1) and the second 45-degree long-wave infrared filter (9-2) form a filter system;
starting the first pump source (1-1) or the second pump source (1-2);
when the first pump source (1-1) is started) When the pump light is in the horizontal polarization state, the first pump source (1-1) emits pump light in the horizontal polarization state, the pump light in the horizontal polarization state passes through the first coupling system, enters the first 45-degree polarizer (4-1) in the direction forming an angle of 45 degrees with the normal line of the first 45-degree polarizer (4-1), enters the power control system, the angle of the first half wave plate (5-1) is adjusted, the horizontal polarization state is changed into the vertical polarization state, the pump light in the vertical polarization state is obtained, the pump light in the vertical polarization state is reflected by the second 45-degree polarizer (4-2) and then enters the second half wave plate (5-2), the angle of the second half wave plate (5-2) is adjusted, and the polarization direction parallel to the GaSe-Ba crystal (7) n is obtainedmPump light of the principal axis of refractive index;
when the second pump source (1-2) is started, the second pump source (1-2) emits pump light in a vertical polarization state, the pump light in the vertical polarization state passes through the second coupling system, then enters the first 45-degree polarizer (4-1) in a direction forming an angle of 45 degrees with the normal line of the first 45-degree polarizer (4-1), is reflected to the power control system through the first 45-degree polarizer (4-1), the angle of the first one-half wave plate (5-1) is adjusted, the pump light in the vertical polarization state passes through the first one-half wave plate (5-1), then is reflected by the second 45-degree polarizer (4-2) and then enters the second one-half wave plate (5-2), the angle of the second one-half wave plate (5-2) is adjusted, and the polarization direction is parallel to the selenium gallium barium crystal (7) nmPump light of the principal axis of refractive index;
the polarization direction is parallel to the selenium gallium barium crystal (7) nmThe pump light of the main axis of the refractive index passes through a 0-degree plane OPO input mirror (6-1) and is incident to the selenium gallium barium crystal (7), and the selenium gallium barium crystal (7) enables the partial polarization direction to be parallel to the n of the selenium gallium barium crystal (7)mPerforming optical nonlinear frequency conversion on the pump light of the refractive index main shaft to obtain signal light with the wavelength of 2.5-2.65 μm and idler light with the wavelength of 9-11 μm;
the signal light with the wavelength between 2.5 and 2.65 mu m is incident to a 0-degree plane OPO output mirror (6-2) and is totally reflected, reversely passes through a selenium gallium barium crystal (7), then is incident to a 0-degree plane OPO input mirror (6-1), is reflected by the 0-degree plane OPO input mirror (6-1), passes through the selenium gallium barium crystal (7) again, and then repeatedly oscillates in the cavity without being output; the idler light with the wavelength between 9 and 11 mu m passes through the 0 DEG plane OPO output mirror (6-2) from the optical parameterAn oscillator output; the idler and the residual polarization direction output from the optical parametric oscillator are parallel to the selenium gallium barium crystal (7) nmThe pump light of the main axis of the refractive index is incident to the filter system, and the residual polarization direction is parallel to the selenium gallium barium crystal (7) nmThe pump light of the main shaft of the refractive index is output through a first 45-degree long-wave infrared filter (9-1), and the idle frequency light output by the optical parametric oscillator is reflected and output through the first 45-degree long-wave infrared filter (9-1) and a second 45-degree long-wave infrared filter (9-2) in sequence to obtain 9-11 mu m long-wave infrared laser.
2. A temperature-tuned 9-11 μm long-wave infrared solid-state laser according to claim 1, characterized in that the first pump source (1-1) is a pulsed laser with a wavelength of 2.09 μm or 2.12 μm and a pulse width of femtosecond, picosecond or nanosecond; the second pump source (1-2) is a pulse laser with a wavelength of 2.02 μm or 2.05 μm and a pulse width of femtosecond, picosecond or nanosecond.
3. The long-wave infrared solid laser with the temperature tuned from 9 microns to 11 microns as claimed in claim 1, wherein the light-passing surfaces of the first plano-concave lens (2-1), the first plano-convex lens (3-1), the second plano-concave lens (2-2) and the second plano-convex lens (3-2) are coated with antireflection films from 2.02 microns to 2.12 microns; the curvature radiuses of the first plano-concave lens (2-1) and the second plano-concave lens (2-2) are both-50 mm to-200 mm, and the diameters of the first plano-concave lens and the second plano-concave lens are both 10mm to 100 mm; the focal lengths of the first plano-convex lens (3-1) and the second plano-convex lens (3-2) are both 50 mm-1000 mm, and the diameters thereof are both 10 mm-100 mm.
4. A temperature-tunable 9-11 μm long-wavelength infrared solid-state laser according to claim 1, wherein the first 45 ° polarizer (4-1) is coated with a film having a vertical polarization state laser reflectance of more than 99% at a wavelength of 2.02 μm to 2.05 μm and a horizontal polarization state laser reflectance of less than 70% at a wavelength of 2.02 μm to 2.05 μm, and with a film having a horizontal polarization state laser transmittance of more than 99% at a wavelength of 2.09 μm to 2.12 μm and a vertical polarization state laser transmittance of less than 20% at a wavelength of 2.09 μm to 2.12 μm.
5. A temperature-tunable 9-11 μm long-wave infrared solid-state laser according to claim 1, characterized in that the second 45 ° polarizer (4-2) is coated with a film having a vertical polarization state laser reflectance of more than 99.5% at a wavelength of 2.02 μm to 2.12 μm and a horizontal polarization state laser transmittance of more than 99.5% at a wavelength of 2.02 μm to 2.12 μm.
6. The temperature-tuned 9-11 μm long-wave infrared solid-state laser as claimed in claim 1, wherein the first half-wave plate (5-1) and the second half-wave plate (5-2) are broadband wave plates with wavelength of 2.02-2.12 μm, and the light-passing surfaces are both coated with 2.02-2.12 μm antireflection films.
7. The long-wave infrared solid laser with temperature tuning of 9-11 μm as claimed in claim 1, wherein one side of the 0 ° plane OPO input mirror (6-1) and the 0 ° plane OPO output mirror (6-2) is coated with an anti-reflection film for pump light with wavelength of 2.02-2.12 μm and idler light with wavelength of 9-11 μm, and the other side is coated with a dielectric film with reflectivity of signal light with wavelength of 2.5-2.65 μm greater than 99%.
8. A long-wave infrared solid laser with temperature tuned 9-11 μm according to claim 1, characterized in that the selenium gallium barium crystal (7) has a light-passing surface perpendicular to the crystal ngThe principal axis of the refractive index.
9. A temperature-tunable 9-11 μm long-wave infrared solid-state laser according to claim 1, characterized in that the semiconductor temperature controller (8) is a TEC temperature controller, the temperature is continuously tunable within the range of 0-45 ℃, and the control accuracy is ± 0.1 ℃.
10. The temperature-tuned 9-11 μm long-wave infrared solid-state laser as claimed in claim 1, wherein the first 45 ° long-wave infrared filter (9-1) and the second 45 ° long-wave infrared filter (9-2) are respectively coated with an antireflection film for pump light with a wavelength of 2.02-2.12 μm on one surface and a dielectric film with an idler frequency light reflectivity of 9-11 μm on the other surface greater than 95%.
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