CN113131323A - Yb-YAG laser amplifier based on dual-wavelength double-end pumping structure - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094096—Multi-wavelength pumping
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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Abstract
The invention relates to a Yb-YAG laser amplifier based on a dual-wavelength dual-end pumping structure, which comprises a seed light source and a dual-wavelength dual-end pumping structure; the dual-wavelength double-end pumping structure comprises a 940nm semiconductor laser, a first pumping coupling lens, a second pumping coupling lens, a first dichroic mirror, a second dichroic mirror, Yb, YAG crystal, a third dichroic mirror, a fourth dichroic mirror, a third pumping coupling lens, a fourth pumping coupling lens and a 969nm semiconductor laser; the invention adopts 940nm and 969nm double-wavelength double-end pumping, solves the problem of semiconductor laser damage of a same-wavelength double-end pumping Yb-YAG laser amplifier; and two spectral absorption peaks of the Yb: YAG crystal are fully utilized, so that the pumping power of the Yb: YAG crystal amplifier is obviously improved on the premise of ensuring the safety of the amplifier system.
Description
Technical Field
The invention relates to a Yb-YAG laser amplifier based on a dual-wavelength double-end pumping structure, and belongs to the technical field of laser amplifiers.
Background
Ytterbium-doped yttrium aluminum garnet (Yb: YAG) crystals are widely used as gain media for 1.0 μm laser amplifiers, including continuous lasers, quasi-continuous lasers, and ultrashort pulse laser amplifiers, due to their excellent physical and optical properties. Divided according to the geometry of the Yb: YAG crystal, a typical Yb: YAG amplifier consists essentially of: bulk crystal amplifiers, slim rod crystal amplifiers, crystal fiber amplifiers, slab amplifiers, and wafer amplifiers.
YAG crystal has two main spectrum absorption peaks, one is near 940nm, and the other is near 969 nm. YAG crystal has a large absorption bandwidth around 940nm, so the requirement on the wavelength stability of the pump laser is relatively low. In contrast, the Yb: YAG crystal has a narrow absorption bandwidth at 969nm, which usually requires wavelength locking of the pump laser. Furthermore, since 969nm is within the zero phonon absorption linewidth of Yb: YAG crystals, the thermal effect due to quantum defect can be reduced by about 34% compared to 940nm pumping, which means that the pumping power density can be increased by about 48% with 969nm laser pumping at the same degree of thermal effect (Optics Letters,2012,37(15): 3045-3047.).
From a pumping structure perspective, a conventional Yb: YAG laser amplifier is usually dominated by end-pumping and side-pumping. The end-pumping comprises a single-end pumping structure and a double-end pumping structure. Double-ended pumping can provide higher pump power and more uniform thermal effect distribution than single-ended pumping. However, from the view point of optical path propagation, the coupling lens of the double-end pump forms a set of symmetrical imaging system, i.e. the pump light output by one semiconductor laser enters the optical fiber of the other semiconductor laser through the coupling lens. The pumping absorption efficiency of the Yb: YAG crystal is limited, and both ends can generate more residual pumping power under high power, so that serious optical damage is caused to the interior of the semiconductor laser or an output optical fiber, and further, larger economic loss is generated.
In practical applications, two methods are generally used to reduce optical damage to the semiconductor laser by the double-ended pump. One method is to reduce the pumping power at both sides to ensure that the remaining pumping light at one side will not damage the semiconductor laser at the other side. Another method is to make the pump light at two sides not completely coincide in the crystal but have a certain deviation in the spatial lateral direction, so that the residual pump light at one side can not enter the optical fiber of the semiconductor laser at the other side through the coupling lens. However, both of the above methods have certain disadvantages. First, the first method cannot provide sufficient pump power for high power amplifiers, which to some extent loses the meaning of double-ended pumping. The second method introduces some lateral spatial mode mismatch to the signal light and the pump light, resulting in a significant reduction in amplification efficiency and signal light beam quality.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a Yb-YAG laser amplifier based on a dual-wavelength double-end pumping structure. The invention adopts a 940nm and 969nm double-end pumping mode, namely, a 940nm high-transmittance and 969nm high-reflectance dichroic mirror is added at a 940nm wavelength pumping end, and a 969nm high-transmittance and 940nm high-reflectance dichroic mirror is added at a 969nm wavelength pumping end, so that residual pumping lights with two wavelengths are respectively led out from the system, the problem of damage of a semiconductor laser at the 940nm wavelength pumping end in a same wavelength double-end pumping Yb-YAG laser amplifier is effectively solved, and the stability and the safety of the amplifier are greatly improved.
Interpretation of terms:
yb: YAG: ytterbium-doped yttrium aluminum garnet.
The technical scheme of the invention is as follows:
YAG laser amplifier, the laser amplifier includes seed light source and double-wavelength double-end pumping structure two parts;
signal light output by the seed light source is input into the dual-wavelength double-end pumping structure through a space light path;
the central wavelength of the signal light emitted by the seed light source is 1030 nm;
the dual-wavelength double-end pumping structure is divided into a single-pass amplification structure and a double-pass amplification structure; in the single-pass amplification structure, signal light is output from a laser amplifier after being amplified once through Yb and YAG crystals; in the double-pass amplification structure, signal light is amplified by Yb-YAG crystal twice after the polarization state is adjusted; this structure is typically used for small signal amplification to achieve higher energy extraction efficiency;
the dual-wavelength double-end pumping structure comprises a 940nm semiconductor laser, a first pumping coupling lens, a second pumping coupling lens, a first dichroic mirror, a second dichroic mirror, a Yb YAG crystal, a third dichroic mirror, a fourth dichroic mirror, a third pumping coupling lens, a fourth pumping coupling lens and a 969nm semiconductor laser which are sequentially arranged along a light path;
at a 940nm pump end, pump light output by the 940nm semiconductor laser firstly passes through a first pump coupling lens and a second pump coupling lens for beam adjustment, then the 940nm pump light enters Yb through a first dichroic mirror and a second dichroic mirror, and the rest 940nm pump light is reflected by a fourth dichroic mirror to output a laser amplifier after passing through a third dichroic mirror;
at the 969nm pump end, pump light output by the 969nm semiconductor laser firstly passes through the fourth pump coupling lens and the third pump coupling lens to perform beam adjustment, then the 969nm pump light enters the Yb: YAG crystal through the fourth dichroic mirror and the third dichroic mirror, and the remaining 969nm pump light is reflected by the first dichroic mirror after passing through the second dichroic mirror to output the laser amplifier.
According to the present invention, in the single-pass amplifying structure, a first λ/2 wave plate, an optical isolator, a first reflector and a first plano-convex lens are sequentially disposed between the seed light source and the second dichroic mirror along the signal light;
in the single-pass amplification structure, signal light output by a seed light source passes through an optical isolator after the polarization direction of the signal light is adjusted through a first lambda/2 wave plate, is reflected by a first reflector and then passes through a first plano-convex lens to be subjected to beam adjustment so as to realize spatial mode matching of the signal light and pump light in Yb: YAG crystals, then is reflected by a second dichroic mirror to enter the Yb: YAG crystals, and is amplified in the Yb: YAG crystals and then is reflected by a third dichroic mirror to output a laser amplifier.
According to the invention, in the double-pass amplifying structure, a first lambda/2 wave plate, an optical isolator, a first reflector, a first plano-convex lens, a second lambda/2 wave plate and a polarization beam splitter are sequentially arranged between the seed light source and the second dichroic mirror along the signal light; in addition, a second plano-convex lens, a lambda/4 wave plate and a second reflecting mirror are sequentially arranged on one side of the third dichroic mirror along the signal light;
in the double-pass amplification structure, signal light output by a seed light source passes through an optical isolator after the polarization direction of the signal light is adjusted through a first lambda/2 wave plate, and is reflected by a first reflector and then passes through a first plano-convex lens to adjust light beams so as to realize the spatial mode matching of the signal light and pump light in a Yb-YAG crystal; the signal light is adjusted to be horizontally polarized through a second lambda/2 wave plate, then penetrates through the polarization beam splitter, is reflected by a second dichroic mirror and enters Yb, YAG crystal to realize first amplification; the amplified signal light passes through the second plano-convex lens and the lambda/4 wave plate in sequence after being reflected by the third double-color mirror, and returns to the original path after being reflected by the second reflecting mirror; the signal light is changed into vertical polarized light after passing through the lambda/4 wave plate twice, and the vertical polarized light enters the Yb/YAG crystal again after being reflected by the third dichroic mirror to realize second amplification; and finally, the signal light is reflected by a second dichroic mirror, and the vertical component of the signal light is output from the polarization beam splitter to the laser amplifier.
According to the invention, the first dichroic mirror has high transmittance at 940nm wavelength of 45 degrees and has transmittance of more than 95%; the reflectivity is more than 95 percent for 969nm wavelength of 45 degrees;
the second dichroic mirror is highly transparent to 940-969 nm wavelength 45 degrees, and the transmittance is more than 95%; the reflectivity is more than 99 percent for the wavelength of 1030nm and the 45-degree high reflectivity;
the third dichroic mirror has high transmittance at 940-969 nm wavelength of 45 degrees and has transmittance of more than 95 percent; the reflectivity is more than 99 percent for the wavelength of 1030nm and the 45-degree high reflectivity;
the fourth dichroic mirror has high transmittance at 969nm wavelength of 45 degrees and has transmittance of more than 95 percent; and the reflectivity is more than 95 percent for 940nm wavelength of 45 degrees.
According to the invention, the first reflecting mirror has high reflectivity of 1030nm signal light at 45 degrees and reflectivity of more than 99%.
According to the invention, the second reflector has high reflectivity of 0 degrees to 1030nm signal light and reflectivity of more than 99%.
According to the invention, the output optical fibers of the 940nm semiconductor laser and the 969nm semiconductor laser have the core diameter of 105/125 μm and the numerical aperture NA of the fiber core of 0.15; or the core diameter of the output optical fiber is 200/220 μm, and the numerical aperture NA of the core is 0.22.
According to the present invention, preferably, the first pump coupling lens, the second pump coupling lens, the third pump coupling lens and the fourth pump coupling lens are all aspheric lenses.
Preferably, the Yb: YAG crystal is any one of a bulk Yb: YAG crystal, a fine rod-shaped Yb: YAG crystal and a Yb: YAG crystal fiber;
more preferably, the diameter of the fine rod-shaped Yb/YAG crystal is more than 1.0mm, the length of the crystal is 20-50 mm, and Yb is3+The ion doping concentration is 0.5-3.0 at.%;
more preferably, the Yb: YAG crystal fiber has a diameter of 1.0mm or less, a crystal length of 30 to 50mm, and Yb3+The ion doping concentration is 0.5-3.0 at.%.
According to the present invention, preferably, the signal light emitted by the seed light source is any one of a continuous laser, a quasi-continuous laser, or an ultrashort pulse laser.
The invention has the beneficial effects that:
1. the invention adopts a 940nm and 969nm double-end pumping mode, namely, a 940nm high-transmittance and 969nm high-reflectance dichroic mirror is added at a 940nm wavelength pumping end, and a 969nm high-transmittance and 940nm high-reflectance dichroic mirror is added at a 969nm wavelength pumping end, so that residual pumping lights with two wavelengths are respectively led out from the system, the problem of damage of a semiconductor laser at the 940nm wavelength pumping end in a same wavelength double-end pumping Yb-YAG laser amplifier is effectively solved, and the stability and the safety of the amplifier are greatly improved.
2. YAG crystal has larger absorption bandwidth near 940nm, relatively lower requirement on the wavelength stability of pump laser, but has larger quantum loss compared with 969 nm; in contrast, the absorption bandwidth of the Yb: YAG crystal at 969nm is narrow, and the 969nm semiconductor laser needs to be wavelength-locked by a certain technology, which results in the increase of the production cost of the semiconductor laser. Moreover, because 969nm is within the zero phonon absorption linewidth of the Yb: YAG crystal, the thermal effects from quantum defect are reduced by over 30% compared to 940nm pumping. The invention fully utilizes two spectral absorption peaks of the Yb: YAG crystal, thereby effectively combining the pumping advantages of two wavelengths of 940nm and 969nm, namely realizing the omnibearing technical improvement of reducing thermal effect, reducing cost, improving safety and the like under the same pumping power and pumping brightness compared with single-wavelength pumping, and providing an effective technical scheme for a Yb: YAG laser amplifier with higher power.
Drawings
FIG. 1 is a schematic diagram of a single-pass amplification structure of a Yb-YAG laser amplifier based on dual-wavelength double-end pumping.
FIG. 2 is a schematic diagram of a double-pass amplification structure of a Yb-YAG laser amplifier based on double-wavelength double-end pumping.
Fig. 3 is a graph showing the relationship between the signal light power and the pump power obtained in embodiment 1 of the present invention.
Fig. 4 is a signal light output spectrum obtained in example 1 of the present invention.
Fig. 5 shows the signal light spot distribution obtained in embodiment 1 of the present invention.
1. 940nm semiconductor laser, 2, a first pump coupling lens, 3, a second pump coupling lens, 4, a first dichroic mirror, 5, a second dichroic mirror, 6, Yb YAG crystal, 7, a third dichroic mirror, 8, a fourth dichroic mirror, 9, a third pump coupling lens, 10, a fourth pump coupling lens, 11, 969nm semiconductor laser, 12, a seed light source, 13, a first lambda/2 wave plate, 14, an optical isolator, 15, a first reflector, 16, a first plano-convex lens, 17, a second lambda/2 wave plate, 18, a polarization beam splitter, 19, a second plano-convex lens, 20, a lambda/4 wave plate, 21 and a second reflector.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1
YAG laser amplifier based on dual-wavelength double-end pumping structure, as shown in FIG. 1, the laser amplifier comprises a seed light source 12 and a dual-wavelength double-end pumping structure;
the signal light output by the seed light source 12 is input into the dual-wavelength double-end pumping structure through a spatial light path;
the central wavelength of the signal light emitted by the seed light source 12 is 1030 nm;
the dual-wavelength double-end pumping structure comprises a 940nm semiconductor laser 1, a first pumping coupling lens 2, a second pumping coupling lens 3, a first dichroic mirror 4, a second dichroic mirror 5, a Yb semiconductor laser, a YAG crystal 6, a third dichroic mirror 7, a fourth dichroic mirror 8, a third pumping coupling lens 9, a fourth pumping coupling lens 10 and a 969nm semiconductor laser 11 which are sequentially arranged along a light path; the seed light source 12 is arranged at one side of the second dichroic mirror 5;
at a 940nm pump end, pump light output by a 940nm semiconductor laser 1 firstly passes through a first pump coupling lens 2 and a second pump coupling lens 3 for beam adjustment, then the 940nm pump light enters a Yb/YAG crystal 6 through a first dichroic mirror 4 and a second dichroic mirror 5, and the residual 940nm pump light is reflected by a fourth dichroic mirror 8 after passing through a third dichroic mirror 7 and then is output to a laser amplifier;
at a 969nm pump end, pump light output by the 969nm semiconductor laser firstly passes through a fourth pump coupling lens 10 and a third pump coupling lens 9 for beam adjustment, then the 969nm pump light enters a Yb/YAG crystal 6 through a fourth dichroic mirror 8 and a third dichroic mirror 7, and the residual 969nm pump light is reflected by a first dichroic mirror 4 after passing through a second dichroic mirror 5 and then is output to a laser amplifier;
according to the gain times of the signal light emitted by the seed light source 12 in the Yb: YAG crystal 6, the single-pass amplification structure is adopted in the embodiment, and the signal light is directly output from the laser amplifier after being amplified once through the Yb: YAG crystal 6;
in the single-pass amplification structure, a first lambda/2 wave plate 13, an optical isolator 14, a first reflector 15 and a first plano-convex lens 16 are sequentially arranged between a seed light source 12 and a second dichroic mirror 5 along signal light;
in the single-pass amplification structure, signal light output by a seed light source 12 passes through an optical isolator 14 after the polarization direction of the signal light is adjusted by a first lambda/2 wave plate 13, is reflected by a first reflector 15 and then passes through a first plano-convex lens 16 for beam adjustment so as to realize spatial mode matching of the signal light and pump light in a Yb: YAG crystal 6, then the signal light is reflected by a second dichroic mirror 5 to enter the Yb: YAG crystal 6, and after the signal light is amplified in the Yb: YAG crystal 6, the signal light is reflected by a third dichroic mirror 7 to output a laser amplifier;
the core diameter of a coupling output optical fiber of the 940nm semiconductor laser 1 is 105/125 mu m, the numerical aperture NA of the fiber core is 0.15, and the maximum output power is 130W;
the diameter of a coupling output optical fiber core of the 969nm semiconductor laser 11 is 105/125 μm, the numerical aperture NA of the fiber core is 0.15, and the maximum output power is 130W;
therefore, in the Yb/YAG laser amplifier based on the dual-wavelength dual-end pumping structure, the output power of a semiconductor laser in the dual-end pumping can reach 260W to the maximum; the output power of a semiconductor laser in the single-ended pump is usually lower than 150W under the same brightness of the existing Yb/YAG laser amplifier based on the single-ended pump, and the output power of the Yb/YAG laser amplifier based on the dual-wavelength double-ended pump structure provided by the invention is obviously improved and the performance is better under the same brightness;
the first pump coupling lens 2 is an aspheric lens, and the focal length is 11 mm;
the second pump coupling lens 3 is an aspheric lens with a focal length of 50 mm;
the third pump coupling lens 9 is an aspheric lens with a focal length of 50 mm;
the fourth pump coupling lens 10 is an aspheric lens, and the focal length is 11 mm;
the first reflector 15 has high reflectivity of 1030nm signal light at 45 degrees, and the reflectivity is more than 99 percent;
the first dichroic mirror 4 has high transmittance to 940nm wavelength of 45 degrees, and the transmittance is more than 95 percent; the reflectivity is more than 95% for 969nm wavelength of 45 degrees;
the second dichroic mirror 5 is highly transparent to 940-969 nm wavelength 45 degrees, and the transmittance is more than 95%; the reflectivity is more than 99% for the high reflectivity of 1030nm wavelength of 45 degrees;
the third dichroic mirror 7 has high transmittance at 940-969 nm wavelength of 45 degrees, and the transmittance is more than 95%; the reflectivity is more than 99% for the high reflectivity of 1030nm wavelength of 45 degrees;
the fourth dichroic mirror 8 has high transmittance to 969nm wavelength of 45 degrees and has transmittance of more than 95 percent; the reflectivity is more than 95% for 940nm wavelength of 45 degrees;
the 45-degree high transmittance is that the included angle between the incident light and the normal of the dichroic mirror is 45 degrees, and the incident light has high transmittance at the moment;
the 45-degree high reflection is that the included angle between the incident light and the normal of the dichroic mirror (or the reflecting mirror) is 45 degrees, and the incident light has high reflectivity at the moment;
Yb/YAG crystal 6 is a fine rod-like Yb/YAG crystal having a crystal diameter of 2mm and a crystal length of 30mm3+Ion doping concentration is 1 at.%;
the central wavelength of the seed light source 12 is 1030nm, the pulse repetition frequency is 1MHz, the pulse width is 1ns, and the output power is 50W;
the focal length of the first plano-convex lens 16 is 300 mm;
the performance of the laser amplifier provided in this embodiment is measured, and the relationship between the power of the signal light output by the laser amplifier and the pump power is shown in fig. 3, where the abscissa is the total pump power of the semiconductor laser 11 of 940nm and 969nm, and the unit is W; the ordinate is 1030nm signal light power, and the unit is W; when the total pump power is 230W (i.e., the output power of the 969nm semiconductor laser 11 is 120W and the output power of the 940nm semiconductor laser is 110W), the maximum signal light output power is 155W, which corresponds to the skew efficiency of 51.5%. The saturation phenomenon does not occur in the whole amplification process, and the maximum output power of the signal in the embodiment is mainly limited by the output power of the semiconductor laser;
fig. 4 shows the output spectrum of the signal light obtained in example 1 (corresponding to a signal light power of 150W), and the bandwidth (full width at half maximum) of the spectrum is close to 2 nm;
fig. 5 shows the light spot distribution obtained by the CCD when the signal light output power is 150W in this embodiment, the light spot distribution is uniform, and the light beam quality is good.
Example 2
A Yb: YAG laser amplifier based on a dual-wavelength double-end pumped structure is provided according to embodiment 1, as shown in fig. 2, with the difference that:
the embodiment is a double-pass amplifying structure; in the double-pass amplification structure, signal light is amplified by Yb: YAG crystal 6 twice through adjusting the polarization state, so that higher energy extraction efficiency is realized;
the concrete structure is as follows: in the double-pass amplification structure, a first lambda/2 wave plate 13, an optical isolator 14, a first reflector 15, a first plano-convex lens 16, a second lambda/2 wave plate 17 and a polarization beam splitter 18 are sequentially arranged between a seed light source 12 and a second dichroic mirror 5 along signal light; further, a second plano-convex lens 19, a λ/4 wave plate 20, and a second reflecting mirror 21 are further provided in this order along the signal light on the side of the third dichroic mirror 7;
in the double-pass amplification structure, signal light output by a seed light source 12 passes through an optical isolator 14 after the polarization direction of the signal light is adjusted by a first lambda/2 wave plate 13, is reflected by a first reflector 15 and then passes through a first plano-convex lens 16 for beam adjustment, so that the spatial mode matching of the signal light and pump light in a Yb: YAG crystal 6 is realized; the signal light is adjusted to be horizontally polarized by a second lambda/2 wave plate 17, then penetrates through a polarization beam splitter 18, is reflected by a second dichroic mirror 5 and enters a Yb/YAG crystal 6 to realize first amplification; the amplified signal light is reflected by the third dichroic mirror 7, then sequentially passes through the second plano-convex lens 19 and the lambda/4 wave plate 20, and is reflected by the second reflecting mirror 21 and then returns to the original path; the signal light is changed into vertical polarized light after passing through the lambda/4 wave plate 20 twice, and the vertical polarized light is reflected by the third dichroic mirror 7 and enters the Yb/YAG crystal 6 again to realize second amplification; finally, the signal light is reflected by a second dichroic mirror 5, and the vertical component of the signal light is output from a polarization beam splitter 18 to a laser amplifier;
YAG as crystal fiber with crystal diameter of 1mm and crystal length of 30mm, and Yb3+The doping concentration of the ions was 1 at.%;
the center wavelength of the signal light output by the seed light source 12 is 1030nm, the pulse width is 300fs, the output power is 5W, and the pulse repetition frequency is 50 MHz;
the second reflector 21 has high reflectivity of 1030nm signal light at 0 degrees, and the reflectivity is more than 99 percent;
the focal length of the first plano-convex lens 16 is 250 mm;
the focal length of the second plano-convex lens 19 is 100 mm.
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| CN202110339538.5A Pending CN113131323A (en) | 2021-03-30 | 2021-03-30 | Yb-YAG laser amplifier based on dual-wavelength double-end pumping structure |
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| CN113809630A (en) * | 2021-09-13 | 2021-12-17 | 山东大学 | A Side-pumped Yb:YAG Ultrashort Pulse Laser Amplifier |
| CN114122881A (en) * | 2021-12-13 | 2022-03-01 | 山东省科学院激光研究所 | A dual-wavelength coaxial controllable switching output laser system |
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| CN114725763A (en) * | 2022-04-01 | 2022-07-08 | 常州英诺激光科技有限公司 | Composite crystal, high power double-end pumping device |
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