CN114188445A - Manufacturing method of gallium arsenide-based LED tube core structure - Google Patents
Manufacturing method of gallium arsenide-based LED tube core structure Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 64
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 116
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 59
- 238000005520 cutting process Methods 0.000 claims abstract description 58
- 239000002313 adhesive film Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 5
- 230000007480 spreading Effects 0.000 claims description 5
- 241001050985 Disco Species 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 14
- 239000003960 organic solvent Substances 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 241000011548 Plebejus melissa Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
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Abstract
The invention relates to a manufacturing method of a tube core structure of a gallium arsenide-based LED, which comprises the following steps: (1) sequentially growing an epitaxial layer and a current expansion layer on a gallium arsenide substrate; (2) manufacturing an N-surface metal electrode; (3) manufacturing a P-side metal film layer; (4) cutting the tube core; (5) manufacturing a P-surface metal electrode pattern: attaching an adhesive film to the front surface of the LED wafer, and tearing off the adhesive film so as to peel off cutting scraps on the surface of the P-surface electrode; then the adhesive film is attached to the front side of the LED wafer, and the adhesive film is torn off for the second time, so that other metals except the P-side metal electrode pattern area on the front side of the LED wafer are peeled off, and a complete P-side metal electrode pattern is obtained; (6) and removing the photoresist and cleaning. The manufacturing method provided by the invention is simple and easy to operate, the manufacturing efficiency of the whole tube core is improved by more than 10%, a cutting protection solution is not used, the use of an organic solvent and a degumming solution in the electrode stripping process is reduced, and the material cost is saved by more than 30%.
Description
Technical Field
The invention relates to a manufacturing method of a tube core structure of a gallium arsenide-based LED, belonging to the technical field of semiconductor processing.
Background
The led (light Emitting diode), which is the same as a general diode, is composed of P-N segments and can convert electric energy into light energy to emit light. The LED is called as a fourth generation illumination light source or a green light source, has the characteristics of energy conservation, environmental protection, long service life, small volume and the like, and is widely applied to the fields of various indications, display, decoration, backlight sources, common illumination, urban night scenes and the like. According to different use functions, the system can be divided into five categories of information display, signal lamps, vehicle lamps, liquid crystal display backlight sources and general illumination.
The gallium arsenide-based LED die structure is generally manufactured according to the following process that an epitaxial structure grows on the surface of a substrate, a current expansion layer grows on the epitaxial layer, a P electrode is manufactured on the current expansion layer, the substrate is thinned, an N-surface electrode structure grows on the back surface of the substrate, a cutting protection solution is coated on a light emitting area, the whole wafer is cut into single die, and the whole manufacturing process is completed.
The most common process methods for manufacturing the metal electrode of the LED mainly comprise two methods. The other method is to manufacture a metal electrode pattern by wet etching, firstly, a metal film layer which forms the whole electrode is manufactured on the surface of a wafer, then, photoresist is used for protecting an electrode area on the surface of the metal film layer, and metal in the area without protection is corroded by corrosive solution, so that a complete metal electrode pattern is obtained. In another common method, a photoresist is used to make an electrode mask pattern, then a whole metal film layer is made on the electrode mask pattern, after the metal film layer is finished, a film stripping method is used to strip the metal film layer to make a required metal pattern, and then a photoresist solution or an organic solvent is used to remove residual photoresist, so as to obtain a wafer with a clean surface. However, the whole process is complicated in steps and high in cost.
The chinese patent document cn01123427.x proposes a metal stripping method, which uses photoresist as a mask, and after conventional exposure, the photoresist is soaked in chlorobenzene for several minutes, and before development, a film hardening treatment is performed, and then, the photoresist pattern is slightly over-developed to make the photoresist pattern overhang in a chamfer. And then the substrate is etched according to the requirement. And depositing a metal film on the basis, and soaking the metal film by using acetone to remove the photoresist and the redundant metal to finish metal stripping. However, the photoresist removing process provided by the patent is complicated, and the manufacturing cost is greatly increased.
Chinese patent document CN106711017A proposes a method for depositing a metal topography using a photoresist, the method comprising: coating a photoresist on the surface of the substrate; sequentially carrying out baking, exposure, baking and development treatment on the base material coated with the photoresist, wherein the included angle between the side wall of the photoresist pattern obtained after development and the surface of the base material is between 80 degrees and 100 degrees; depositing metal on the surface of the photoresist pattern after development treatment, wherein the metal falls on the surface of the base material at the position of the photoresist opening; removing the metal on the surface of the photoresist; and a step of removing the photoresist. So as to overcome the problem that the width of the bottom of the metal electrode or the metal wire is far larger than that of the top. However, in the patent of the invention, the surface photoresist also needs to be removed by using an organic solvent or a special photoresist removing liquid for the convenience of stripping, and the increase of one photoresist removing step also increases the manufacturing cost, so that the whole manufacturing process is complicated.
Therefore, it is necessary to develop a process method that is simple and convenient in manufacturing process, low in cost, and capable of realizing mass production, aiming at the disadvantages of the manufacturing process in the existing manufacturing process of the light emitting diode core.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a manufacturing method of a die structure of a gallium arsenide-based LED.
Description of terms:
1. front side of the wafer: refers to the P-side of the wafer.
2. Back side of the wafer: refers to the other side opposite the P side.
3. Normal temperature: ambient temperatures as described herein have meanings well known in the art and are generally at 25 + -2 deg.C (23 deg.C-27 deg.C).
The technical scheme of the invention is as follows:
a manufacturing method of a die structure of a gallium arsenide-based LED comprises the following steps:
(1) manufacturing an LED tube core at an earlier stage: sequentially growing an epitaxial layer and a current expansion layer on a gallium arsenide substrate, and thinning the back of the substrate;
(2) manufacturing an N-surface metal electrode: manufacturing an N-surface metal electrode on the back surface of the substrate by an evaporation or sputtering method;
(3) preparing a P-surface metal film layer: manufacturing an electrode mask pattern on the front side of the LED wafer prepared in the step (2) by using negative photoresist; then, a whole P-surface metal film layer is manufactured on the surface of the electrode mask pattern by an evaporation or sputtering method, and stripping operation is not carried out;
(4) and (3) cutting a tube core: attaching the adhesive film to the back surface of the LED wafer, cutting the LED wafer from the front surface of the LED wafer, and cutting the LED wafer into single tube cores; in this step, an adhesive film is applied to the back surface to fix the die.
(5) Manufacturing a P-surface metal electrode pattern: attaching the adhesive film to the front side of the LED wafer, and tearing off the adhesive film for the first time so as to peel off cutting scraps on the surface of the P-surface metal film layer; then the adhesive film is attached to the front side of the LED wafer, and the adhesive film is torn off for the second time, so that other metals except the P-side metal electrode pattern area on the front side of the LED wafer are peeled off, and a complete P-side metal electrode pattern is obtained;
(6) removing the photoresist and cleaning: and cleaning the residual photoresist on the front surface of the LED wafer by using a photoresist solution, and then putting the LED wafer into a cleaning machine for cleaning.
Preferably, in step (5), the force for tearing off the adhesive film for the first time is less than the force for tearing off the adhesive film for the second time, and the force for tearing off the adhesive film for the second time is less than the force for tearing off the adhesive film from the back surface of the LED chip.
The sticking film is torn off for the first time, because a large amount of cutting scraps exist on the surface of the whole P-surface metal film layer, the adhesiveness of the cutting scraps is low, and the scraps can be stuck off by using low pressure; because the photoresist exists on the surface of the P-side metal film layer, the adhesiveness of the photoresist and the adhesive film on the surface of the P-side metal film layer is low, and the force for tearing off the adhesive film for the second time is lower than the force for tearing off the adhesive film from the back of the LED wafer, so that the adhesive film on one side of the surface of the P-side metal film layer can easily tear off the metal on the surface of the light emitting area without risk of tube core falling, and the stripping process of a single tube core is realized.
Preferably, according to the present invention, the adhesive film used in step (4) and step (5) is a blue film or a white film. Is suitable for stripping metal, and does not drop glue when stripping.
Further preferably, the blue film is SPV-224 SRB; the white film was model SPV-224.
According to the preferable embodiment of the present invention, in the step (6), the degumming solution is a water-based degumming solution. The water-based photoresist removing liquid comprises alcohols, organic pure amine, quaternary ammonium base, polar aprotic organic solvent and deionized water, and the water-soluble photoresist removing liquid takes most of inorganic components and does not damage a viscous film so as to achieve the aim of removing the photoresist. The water-based degumming solution is sold on the market, and the degumming solution can not corrode the viscous membrane.
Preferably, in step (6), the cleaning machine is a DCS1440 cleaning machine of DISCO. Not only removing a small amount of cutting scraps on the surface of the electrode, but also removing residual photoresist removing liquid.
Preferably, in step (3), the entire P-side metal film layer is formed on the surface of the electrode mask pattern by evaporation or sputtering at room temperature. At normal temperature, the P-surface metal electrode is manufactured by adopting an evaporation or sputtering method, so that the photoresist can be prevented from being deformed by heating.
Preferably, in step (4), the diamond knife is used for cutting, and the speed of the diamond knife is 2000rpm-3000rpm during cutting. In the invention, the diamond cutter is adopted for cutting to adapt to metal cutting, the cutter breakage phenomenon can not occur at the cutter speed, and the rapid cutting can be ensured.
According to the invention, in the step (1), the material of the current spreading layer is preferably ITO or ZnO. So as to achieve ideal current spreading effect and light transmittance.
Preferably, in step (1), the thickness of the thinned substrate is 120-200 μm.
According to the present invention, in the step (2), the material of the N-face metal electrode is any one of Ni, Ge, Au, and Pt. The N-side metal electrode covers the whole back of the LED wafer.
According to the invention, in the step (3), the material of the P-side metal film layer is at least one of Cr, Ni, Ge, Ti, Pt, Au and Al.
According to the invention, the purity of the N-side metal electrode material and the purity of the P-side metal film layer material are preferably not less than 99.999%. So as to ensure the quality of the metal film layer.
The invention has the beneficial effects that:
1. the manufacturing method of the gallium arsenide-based LED die structure is different from the conventional manufacturing sequence of the die process, and the P-surface electrode pattern is manufactured firstly and then cut; the method provided by the invention firstly manufactures the P-side metal film layer through the mask pattern without stripping, then directly cuts the P-side metal film layer into single tube cores, and finally manufactures the P-electrode pattern. Because whole luminous zone has the protection of P face metal film layer, the cutting process does not need extra at LED wafer surface coating cutting protection liquid like this, simultaneously, because the protection of P face metal film layer, the luminous zone is because of the cutting pollution that the cutting piece leads to during the cutting can be avoided. The method not only reduces the complicated process steps of directly peeling and removing the photoresist after the electrode is manufactured, but also avoids the use of cutting protection liquid, and greatly improves the manufacturing process and the manufacturing cost.
2. In the invention, the adhesive film is used for directly peeling off the tube core twice, and the first peeling of the film has low adhesion of cutting scraps because a large amount of cutting scraps exist on the whole surface of the P-surface electrode, so that the scraps can be adhered by using low pressure; because the surface of the P-side electrode is provided with the photoresist, the adhesiveness of the photoresist and the adhesive film on the surface of the P-side electrode is smaller, and the force for tearing the film for the second time is smaller than the force for tearing the film from the back surface of the LED wafer by the first adhesive film, so that the adhesive film on one side of the surface of the P-side metal electrode can easily tear off the metal on the surface of the light emitting area without generating the risk of tube core falling, thereby realizing the stripping process of a single tube core and realizing the stripping process of the single tube core.
3. According to the invention, the water-based photoresist removing liquid is selected to remove the residual photoresist on the front surface of the LED wafer, the water-based photoresist removing liquid does not dissolve the viscous film, and the residual photoresist on the surface can be effectively removed; and then, adjusting proper water pressure through a cleaning machine body to clean the residual degumming liquid and a small amount of cutting scraps on the surface of the P electrode.
4. The method has the advantages of simple process, easy operation of the whole process, simple and convenient realization, short processing time, great improvement of the manufacturing efficiency of the whole tube core, no use of cutting protection liquid, great reduction of the production cost of the whole processing while improving the environmental protection, suitability for large-scale quantitative production and general application in the manufacturing process of all gallium arsenide-based light-emitting diodes.
Drawings
FIG. 1 is a schematic diagram of the die structure after step (3) of the present invention is completed.
FIG. 2 is a schematic diagram of the die structure after step (6) of the present invention is completed.
Fig. 3 is a photograph of the front surface of the LED chip after the adhesive film is peeled off for the first time in step (5) of the present invention.
FIG. 4 is a photograph of the front surface of the LED chip after the second stripping in step (5) of the present invention.
1. The solar cell comprises a gallium arsenide substrate, 2 an epitaxial layer, 3 a current expansion layer, 4 a negative photoresist, 5 a P-surface metal film layer and 6 a P-surface metal electrode.
Detailed Description
The invention is further described below, but not limited thereto, with reference to the following examples and the accompanying drawings.
Example 1
A method for fabricating a die structure of a gaas-based LED, as shown in fig. 1-2, includes:
(1) manufacturing an LED tube core at an earlier stage: sequentially growing an epitaxial layer 2 and a current expansion layer 3 on a gallium arsenide substrate 1, and thinning the back of the substrate;
in the step (1), the current spreading layer 3 is made of ITO or ZnO. So as to achieve ideal current spreading effect and light transmittance.
In the step (1), the thickness of the thinned substrate is 120-200 μm.
(2) Manufacturing an N-surface metal electrode: manufacturing an N-surface metal electrode on the back surface of the substrate by an evaporation or sputtering method;
in the step (2), the material of the N-face metal electrode is any one of Ni, Ge, Au and Pt. The N-side metal electrode covers the whole back of the LED wafer.
The purity of the N-face metal electrode material is not less than 99.999%. So as to ensure the quality of the metal film layer.
(3) And (3) manufacturing a P-surface metal film layer 5: manufacturing an electrode mask pattern on the front side of the LED wafer prepared in the step (2) by using a negative photoresist 4; then, a whole P-surface metal film layer 5 is manufactured on the surface of the electrode mask pattern by an evaporation or sputtering method, and the stripping operation is not carried out;
in the step (3), the whole P-side metal film layer 5 is formed on the surface of the electrode mask pattern by an evaporation or sputtering method at normal temperature. At normal temperature, the P-surface metal electrode 6 is manufactured by adopting an evaporation or sputtering method, so that the photoresist can be prevented from being deformed by heating.
In the step (3), the material of the P-side metal film layer 5 is at least one of Cr, Ni, Ge, Ti, Pt, Au, and Al.
The purity of the P-surface metal electrode 6 material is not less than 99.999%. So as to ensure the quality of the metal film layer.
(4) And (3) cutting a tube core: attaching the adhesive film to the back surface of the LED wafer, cutting the LED wafer from the front surface of the LED wafer, and cutting the LED wafer into single tube cores; in this step, an adhesive film is applied to the back surface to fix the die.
In the step (4), a diamond cutter is adopted for cutting, and the cutter speed is 2000rpm-3000rpm in the cutting process. In the invention, the diamond cutter is adopted for cutting to adapt to metal cutting, the cutter breakage phenomenon can not occur at the cutter speed, and the rapid cutting can be ensured.
(5) And (3) making a P-surface metal electrode 6 pattern: attaching the adhesive film to the front surface of the LED wafer, and tearing off the adhesive film for the first time so as to peel off cutting scraps on the surface of the P-surface metal film layer 5; then the adhesive film is attached to the front surface of the LED wafer, and the adhesive film is torn off for the second time, so that other metals except the P-surface metal electrode 6 pattern area on the front surface of the LED wafer are peeled off, and a complete P-surface metal electrode 6 pattern is obtained;
in the step (5), the force for tearing off the sticky film for the first time is smaller than the force for tearing off the sticky film for the second time, and the force for tearing off the sticky film for the second time is smaller than the force for tearing off the sticky film from the back of the LED wafer.
The adhesive film is torn off for the first time, because a large amount of cutting scraps exist on the surface of the whole P-side metal film layer 5, the adhesiveness of the cutting scraps is low, and the scraps can be adhered by using low pressure; because the surface of the P-side metal film layer 5 is provided with the photoresist, the adhesiveness of the photoresist and the adhesive film on the surface of the P-side metal film layer 5 is low, and the force for tearing off the adhesive film for the second time is lower than the force for tearing off the adhesive film from the back surface of the LED wafer, so that the adhesive film on one side of the surface of the P-side metal film layer 5 can easily tear off the metal on the surface of the light emitting area without generating the risk of tube core falling, and the stripping process of a single tube core is realized.
The adhesive film used in step (4) and step (5) is a blue film or a white film. Is suitable for stripping metal, and does not drop glue when stripping. The model of the blue film is SPV-224 SRB; the white film was model SPV-224. The white film used in this example was of the type SPV-224 and had a size of 160mm x 100 m. Blue film model number SPV-224SRB was produced by SH/PE bright in down, size 220MM 100M.
In this embodiment, the morphology of the front surface of the LED wafer after the first film removal in step (5) is as shown in fig. 3, as can be seen from fig. 3, the front surface of the LED wafer is relatively smooth, and the adhesive film sticks off the debris on the front surface of the LED wafer; the black circles in fig. 3 are the peripheries of the P-side metal electrode 6.
The appearance of the front surface of the LED wafer after the second film tearing in the step (5) is shown in fig. 4, the inner black circles are the periphery of the P-side metal electrode 6, the outer black circles are needed for digging holes on the surface of the epitaxial wafer, and the outer black circles are not shown in fig. 3 because they are covered by the metal P-side metal film layer 5. Thereby preparing the P-side metal electrode 6.
(6) Removing the photoresist and cleaning: and cleaning the residual photoresist on the front surface of the LED wafer by using a photoresist solution, and then putting the LED wafer into a cleaning machine for cleaning.
In the step (6), the degumming solution is a water-based degumming solution. The water-based photoresist removing liquid comprises alcohols, organic pure amine, quaternary ammonium base, polar aprotic organic solvent and deionized water, and the water-soluble photoresist removing liquid takes most of inorganic components and does not damage a viscous film so as to achieve the aim of removing the photoresist. The water-based degumming solution is sold on the market, and the degumming solution can not corrode the viscous membrane.
In the step (6), the cleaning machine is a DCS1440 cleaning machine of DISCO. Not only removing a small amount of cutting scraps on the surface of the electrode, but also removing residual photoresist removing liquid.
Comparative example 1
The manufacturing method of the die structure of the conventional gallium arsenide-based LED comprises the following steps:
(1) manufacturing an LED tube core at an earlier stage: sequentially growing an epitaxial layer 2 and a current expansion layer 3 on a gallium arsenide substrate 1, and thinning the back of the substrate;
(2) manufacturing an N-surface metal electrode: manufacturing an N-surface metal electrode on the back surface of the substrate by an evaporation or sputtering method;
(3) manufacturing a P-surface metal electrode 6: manufacturing an electrode mask pattern on the surface of the wafer prepared in the step (2) by using a negative photoresist 4; then, making whole metal on the surface of the electrode mask pattern by an evaporation or sputtering method; and then, soaking the wafer in a degumming solution or an organic solvent, tearing off redundant metal on the surface by using a viscous film, and finally removing residual surface glue by using the degumming solution to manufacture the P-surface metal electrode 6 with a clean surface.
(4) And (3) cutting a tube core: and attaching the adhesive film to the back surface of the LED wafer, cutting the LED wafer from the front surface of the LED wafer, and cutting the LED wafer into single tube cores by using the cutting protection liquid.
Comparing embodiment 1 with comparative example 1, it can be seen that in the conventional method for manufacturing a die structure of a gallium arsenide-based LED, a P-side metal electrode 6 is manufactured first, then die cutting is performed, during the manufacturing process of the P-side metal electrode 6, a wafer needs to be placed into a degumming solution or an organic solvent for soaking, a sticky film is used to tear off excess metal on the surface, and finally, the degumming solution is used to remove residual gum on the surface, so as to manufacture a metal electrode with a clean surface; in addition, a cutting protection solution is required in the die cutting process. In embodiment 1, the whole light-emitting region is protected by the P-side metal film layer 5, so that no extra cutting protection solution is required to be coated on the surface of the LED wafer in the cutting process, and meanwhile, due to the protection of the P-side metal film layer 5, cutting pollution caused by cutting chips in the light-emitting region during cutting can be avoided. The method not only reduces the complicated process steps of directly peeling and removing the photoresist after the electrode is manufactured, but also avoids the use of cutting protection liquid, and greatly improves the manufacturing process and the manufacturing cost. Compared with the conventional manufacturing method, the manufacturing method provided by the embodiment 1 improves the manufacturing efficiency of the whole tube core by more than 10%; meanwhile, the use cost of an organic solvent and a photoresist removing solution in the stripping process of the P-surface metal electrode 6 and the use cost of a cutting protection solution are reduced, the recovery and treatment cost of the cutting protection solution is higher, and the material cost is saved by more than 30%.
Claims (10)
1. A method for manufacturing a die structure of a gallium arsenide-based LED is characterized by comprising the following steps:
(1) manufacturing an LED tube core at an earlier stage: sequentially growing an epitaxial layer and a current expansion layer on a gallium arsenide substrate, and thinning the back of the substrate;
(2) manufacturing an N-surface metal electrode: manufacturing an N-surface metal electrode on the back surface of the substrate by an evaporation or sputtering method;
(3) preparing a P-surface metal film layer: manufacturing an electrode mask pattern on the front side of the LED wafer prepared in the step (2) by using negative photoresist; then, a whole P-surface metal film layer is manufactured on the surface of the electrode mask pattern by an evaporation or sputtering method, and stripping operation is not carried out;
(4) and (3) cutting a tube core: attaching the adhesive film to the back surface of the LED wafer, cutting the LED wafer from the front surface of the LED wafer, and cutting the LED wafer into single tube cores;
(5) manufacturing a P-surface metal electrode pattern: attaching the adhesive film to the front side of the LED wafer, and tearing off the adhesive film for the first time so as to peel off cutting scraps on the surface of the P-surface metal film layer; then the adhesive film is attached to the front side of the LED wafer, and the adhesive film is torn off for the second time, so that other metals except the P-side metal electrode pattern area on the front side of the LED wafer are peeled off, and a complete P-side metal electrode pattern is obtained;
(6) removing the photoresist and cleaning: and cleaning the residual photoresist on the front surface of the LED wafer by using a photoresist solution, and then putting the LED wafer into a cleaning machine for cleaning.
2. The method of claim 1, wherein in step (5), the force for tearing off the adhesive film for the first time is less than the force for tearing off the adhesive film for the second time, and the force for tearing off the adhesive film for the second time is less than the force for tearing off the adhesive film from the back surface of the LED wafer.
3. The method for manufacturing the die structure of the GaAs-based LED according to claim 1, wherein the adhesive film used in the steps (4) and (5) is a blue film or a white film;
further preferably, the blue film is SPV-224 SRB; the white film was model SPV-224.
4. The method for manufacturing a die structure of a gallium arsenide based LED according to claim 1, wherein in step (6), the degumming solution is a water based degumming solution.
5. The method of claim 1, wherein in step (6), the cleaning machine is a DCS1440 cleaning machine of DISCO.
6. The method for manufacturing a die structure of a gallium arsenide based LED according to claim 1, wherein in step (3), the entire P-side metal film layer is formed on the surface of the electrode mask pattern by evaporation or sputtering at room temperature.
7. The method of claim 1, wherein in step (4), the cutting is performed with a diamond knife at a speed of 2000rpm to 3000 rpm.
8. The method according to claim 1, wherein in step (1), the current spreading layer is made of ITO or ZnO;
in the step (1), the thickness of the thinned substrate is 120-200 μm.
9. The method for manufacturing the die structure of the GaAs-based LED according to claim 1, wherein in the step (2), the material of the N-side metal electrode is any one of Ni, Ge, Au, and Pt;
in the step (3), the P-side metal film layer is made of at least one of Cr, Ni, Ge, Ti, Pt, Au and Al.
10. The method of any one of claims 1-9, wherein the purity of the N-side metal electrode material and the purity of the P-side metal film layer material are not less than 99.999%.
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