CN114182222A - Preparation process of conductive metal oxide target - Google Patents
Preparation process of conductive metal oxide target Download PDFInfo
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- CN114182222A CN114182222A CN202111292657.6A CN202111292657A CN114182222A CN 114182222 A CN114182222 A CN 114182222A CN 202111292657 A CN202111292657 A CN 202111292657A CN 114182222 A CN114182222 A CN 114182222A
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- ingot
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- purity
- adopting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 24
- 238000005507 spraying Methods 0.000 claims abstract description 17
- 238000000889 atomisation Methods 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 13
- 239000011701 zinc Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000012216 screening Methods 0.000 claims abstract description 8
- 239000012798 spherical particle Substances 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000007750 plasma spraying Methods 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 3
- 239000000956 alloy Substances 0.000 claims abstract description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910002065 alloy metal Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000013077 target material Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 4
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000005344 low-emissivity glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
- B22F2009/0824—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid with a specific atomising fluid
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a preparation process of a conductive metal oxide target, which comprises the following steps: step 1, selecting materials: preparing a Zn ingot and a Sn ingot; and 2, melting: heating Zn ingot and Sn ingot to 400-500 ℃ for melting, and stirring for 1-2 hours by adopting an electromagnetic stirring technology; step 3, metal atomization: preparing the molten metal alloy in the step 2 into powder particles by adopting a metal atomization process, wherein the powder particles are spherical particles with zinc tin oxide coatings on the surfaces and ZnSn alloy at the center; and 4, screening: screening spherical particles with the particle size of 40-120 um from the powdery particles in the step 3 to serve as powder; step 5, spraying: and (4) spraying the powder in the step (4) to form the target by adopting a plasma spraying process. The preparation process of the conductive metal oxide target can adopt magnetron sputtering to prepare the zinc tin oxide film layer, thereby improving the film coating process efficiency.
Description
Technical Field
The invention relates to a target material preparation process, in particular to a preparation process of a conductive metal oxide target material, and belongs to the technical field of target materials.
Background
At present, in the coating process of low-emissivity glass, a metal zinc-tin target is generally adopted for reactive sputtering to prepare a zinc-tin oxide coating, the process relates to reactive sputtering, the deposition of a film layer is low, the production efficiency is low, and meanwhile, in order to prevent process gas from interfering other sputtering coating links in the reactive sputtering process, buffer spaces are required to be reserved on two sides of a process cavity, so that the improvement of the productivity of a coating production line is influenced. Therefore, a new target material capable of improving the product is needed in the industry.
Disclosure of Invention
The invention aims to overcome the defects and provide a preparation process of a conductive metal oxide target material capable of preparing a zinc tin oxide film layer by adopting magnetron sputtering, so that the coating process efficiency is improved by more than three times.
The purpose of the invention is realized as follows:
a preparation process of a conductive metal oxide target comprises the following steps:
step 1, selecting materials: preparing a Zn ingot and a Sn ingot;
and 2, melting: heating Zn ingot and Sn ingot to 400-500 ℃ for melting, and stirring for 1-2 hours by adopting an electromagnetic stirring technology;
step 3, metal atomization: preparing the molten metal alloy in the step 2 into powder particles by adopting a metal atomization process, wherein the powder particles are spherical particles with zinc tin oxide coatings on the surfaces and ZnSn alloy at the center;
and 4, screening: screening spherical particles with the particle size of 40-120 um from the powdery particles in the step 3 to serve as powder;
step 5, spraying: and (4) spraying the powder in the step (4) to form the target by adopting a plasma spraying process.
Preferably, in step 1, the Zn ingot and the Sn ingot are respectively: the Sn accounts for 45-55% and the Zn accounts for 45-55%.
Preferably, in the metal atomization process in the step 3, high-purity oxygen with the purity of more than 99.99 percent is adopted as the atomization medium, the atomization pressure is 12-16 bar, the flow rate of the alloy metal melted in the step 2 is 0.2-0.5L/min,
preferably, in the step 5, the spraying voltage is 100-120V, the current is 400-450A, and the powder supply speed of the spray gun is 100-120 g/min; and meanwhile, spraying is carried out in a sealed cavity, high-purity oxygen with the purity exceeding 99.99 percent, high-purity nitrogen with the purity exceeding 99.99 percent and high-purity argon with the purity exceeding 99.99 percent are continuously introduced into the cavity through gas pipelines at two sides of a spray gun, a negative pressure dust removal pipeline is connected to the lower part of the cavity, redundant powder in the spraying process is pumped away by utilizing negative pressure, the pressure in the cavity is monitored, and the pressure in the cavity is ensured to be kept at 0-1 bar.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the zinc tin ingot is used for preparing powder in an oxygen atmosphere to generate composite powder with an oxide layer coating, and an oxidizing atmosphere is further provided in the subsequent thermal spraying process to prepare the zinc tin oxide target material with the conductive capability; the target can be directly used for preparing a zinc tin oxide film layer by magnetron sputtering, the deposition rate of the film layer is more than three times of that of reactive sputtering, and the production efficiency of a production line is greatly improved.
Detailed Description
The invention relates to a preparation process of a conductive metal oxide target,
step 1, selecting materials: according to the weight ratio: 45-55% of Sn and 45-55% of Zn, and preparing Zn ingots and Sn ingots;
and 2, melting: heating Zn ingot and Sn ingot to 400-500 deg.C, and stirring for 1-2 hr by electromagnetic stirring technology;
step 3, metal atomization: preparing powder by adopting a metal atomization process, wherein high-purity oxygen with the purity of over 99.99 percent is adopted as an atomization medium, the atomization pressure is 12-16 bar, the flow speed of the molten alloy metal in the step 2 is 0.2-0.5L/min, and spherical particles with zinc tin oxide coatings (ZnSnO) on the surfaces and metal ZnSn at the center are prepared;
and 4, screening: screening out spherical particles with the particle size of 40-120 um as powder by adopting an airflow classifying screen;
step 5, spraying: adopting a plasma spraying process, wherein the spraying voltage is 100-120V, the current is 400-450A, and the powder supply rate of a spray gun is 100-120 g/min; spraying is carried out in a sealed cavity, high-purity oxygen with purity over 99.99 percent, high-purity nitrogen with purity over 99.99 percent and high-purity argon with purity over 99.99 percent are continuously introduced into the cavity through gas pipelines at two sides of a spray gun, a negative pressure dust removal pipeline is connected to the lower part of the cavity, redundant powder in the spraying process is pumped away by utilizing negative pressure, and meanwhile, the pressure in the cavity is monitored, so that the pressure in the cavity is kept at 0-1 bar;
in the spraying process, the powder is further oxidized by the thermal spraying under the nitrogen/oxygen/argon atmosphere to form a zinc tin oxide coating, and meanwhile, due to insufficient oxidation, the oxidation condition of the forming material after the powder is melted is controlled by adjusting the flow ratio of the oxygen/nitrogen, and the coating still contains a small amount of metallic zinc tin, so that the conductive effect is achieved.
The following three experiments are targets prepared under the condition of introducing different gas flows, and the conductivity data measured by the following three experiments are as follows:
| experiment one | Experiment two | Experiment three | |
| Flow rate of oxygen | 0 | 10 | 20 |
| Nitrogen flow | 60m3/h | 50m3/h | 40m3/h |
| Content of other materials | Ar 10m3/h | Ar 10m3/h | Ar 10m3/h |
| Electric conductivity | <5ohm.cm | <50ohm.cm | <200ohm.cm |
In conclusion, the target material prepared by the process has certain conductive performance, different conductive parameters can be adjusted according to process parameters so as to match different requirements, and then the conductive performance of the target material is utilized to carry out magnetron sputtering to prepare the zinc tin oxide film layer, so that the production efficiency of a subsequent client coating production line is improved, and the market competitiveness of the target material product prepared by the process is improved.
In addition: it should be noted that the above-mentioned embodiment is only a preferred embodiment of the present patent, and any modification or improvement made by those skilled in the art based on the above-mentioned conception is within the protection scope of the present patent.
Claims (4)
1. A preparation process of a conductive metal oxide target is characterized by comprising the following steps: the process comprises the following steps:
step 1, selecting materials: preparing a Zn ingot and a Sn ingot;
and 2, melting: heating Zn ingot and Sn ingot to 400-500 ℃ for melting, and stirring for 1-2 hours by adopting an electromagnetic stirring technology;
step 3, metal atomization: preparing the molten metal alloy in the step 2 into powder particles by adopting a metal atomization process, wherein the powder particles are spherical particles with zinc tin oxide coatings on the surfaces and ZnSn alloy at the center;
and 4, screening: screening spherical particles with the particle size of 40-120 um from the powdery particles in the step 3 to serve as powder;
step 5, spraying: and (4) spraying the powder in the step (4) to form the target by adopting a plasma spraying process.
2. The process according to claim 1, wherein the conductive metal oxide target is prepared by the following steps: in the step 1, the Zn ingot and the Sn ingot are respectively as follows according to the weight ratio: the Sn accounts for 45-55% and the Zn accounts for 45-55%.
3. The process according to claim 1, wherein the conductive metal oxide target is prepared by the following steps: in the metal atomization process in the step 3, high-purity oxygen with the purity of over 99.99 percent is adopted as an atomization medium, the atomization pressure is 12-16 bar, and the flow speed of the molten alloy metal in the step 2 is 0.2-0.5L/min.
4. The process according to claim 1, wherein the conductive metal oxide target is prepared by the following steps: in the step 5, the spraying voltage is 100-120V, the current is 400-450A, and the powder supply speed of a spray gun is 100-120 g/min; and meanwhile, spraying is carried out in a sealed cavity, high-purity oxygen with the purity exceeding 99.99 percent, high-purity nitrogen with the purity exceeding 99.99 percent and high-purity argon with the purity exceeding 99.99 percent are continuously introduced into the cavity through gas pipelines at two sides of a spray gun, a negative pressure dust removal pipeline is connected to the lower part of the cavity, redundant powder in the spraying process is pumped away by utilizing negative pressure, the pressure in the cavity is monitored, and the pressure in the cavity is ensured to be kept at 0-1 bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111292657.6A CN114182222A (en) | 2021-11-03 | 2021-11-03 | Preparation process of conductive metal oxide target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111292657.6A CN114182222A (en) | 2021-11-03 | 2021-11-03 | Preparation process of conductive metal oxide target |
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| Publication Number | Publication Date |
|---|---|
| CN114182222A true CN114182222A (en) | 2022-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111292657.6A Pending CN114182222A (en) | 2021-11-03 | 2021-11-03 | Preparation process of conductive metal oxide target |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985400A (en) * | 1989-06-28 | 1991-01-15 | Leybold Aktiengesellschaft | Process for producing superconductive ceramics by atomization of alloy precurser under reactive atmospheres or post annealing under oxygen |
| CN1149084A (en) * | 1995-08-18 | 1997-05-07 | W·C·赫罗伊斯有限公司 | Manufacturing method of cathode sputtering target or the similar targets |
| CN104087906A (en) * | 2014-07-29 | 2014-10-08 | 林嘉佑 | Preparation technology of ZnSnOx ceramic target and method for preparing ZnSnOx coated film by using same |
| CN105349951A (en) * | 2015-11-03 | 2016-02-24 | 基迈克材料科技（苏州）有限公司 | Method for preparing zinc alloy oxide target through plasma spraying process |
| CN107557737A (en) * | 2017-08-04 | 2018-01-09 | 米亚索乐装备集成（福建）有限公司 | A kind of method for preparing tubular target |
| CN109500391A (en) * | 2019-01-05 | 2019-03-22 | 桂林电器科学研究院有限公司 | A kind of preparation method of high ductility silver zinc oxide contact material |
| CN112204159A (en) * | 2018-03-01 | 2021-01-08 | 奥朗茵特格拉公司 | Method for selectively oxidizing metal of alloy |
-
2021
- 2021-11-03 CN CN202111292657.6A patent/CN114182222A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985400A (en) * | 1989-06-28 | 1991-01-15 | Leybold Aktiengesellschaft | Process for producing superconductive ceramics by atomization of alloy precurser under reactive atmospheres or post annealing under oxygen |
| CN1149084A (en) * | 1995-08-18 | 1997-05-07 | W·C·赫罗伊斯有限公司 | Manufacturing method of cathode sputtering target or the similar targets |
| CN104087906A (en) * | 2014-07-29 | 2014-10-08 | 林嘉佑 | Preparation technology of ZnSnOx ceramic target and method for preparing ZnSnOx coated film by using same |
| CN105349951A (en) * | 2015-11-03 | 2016-02-24 | 基迈克材料科技（苏州）有限公司 | Method for preparing zinc alloy oxide target through plasma spraying process |
| CN107557737A (en) * | 2017-08-04 | 2018-01-09 | 米亚索乐装备集成（福建）有限公司 | A kind of method for preparing tubular target |
| CN112204159A (en) * | 2018-03-01 | 2021-01-08 | 奥朗茵特格拉公司 | Method for selectively oxidizing metal of alloy |
| CN109500391A (en) * | 2019-01-05 | 2019-03-22 | 桂林电器科学研究院有限公司 | A kind of preparation method of high ductility silver zinc oxide contact material |
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