CN114171861A

CN114171861A - Miniaturized waveguide switch

Info

Publication number: CN114171861A
Application number: CN202111504021.3A
Authority: CN
Inventors: 杨永穆; 梁昌松; 吴思慧; 董金生; 朱玉昊; 於阳; 陈哲
Original assignee: Yangtze River Delta Research Institute of UESTC Huzhou
Current assignee: Yangtze River Delta Research Institute of UESTC Huzhou
Priority date: 2021-12-03
Filing date: 2021-12-03
Publication date: 2022-03-11
Anticipated expiration: 2041-12-03
Also published as: CN114171861B

Abstract

The invention discloses a miniaturized waveguide switch, which comprises an upper cavity and a lower cavity which form a rectangular waveguide, and a dielectric substrate inserted into the center of an E surface of the rectangular waveguide, wherein a metal structure on the front surface of the dielectric substrate comprises two symmetrical metal C-shaped resonators, two symmetrical transverse metal strips, a grounding metal sheet I, a direct current feed circuit I and a direct current feed circuit II, a PIN diode I, a PIN diode II, a PIN diode III and a PIN diode IV are connected between the transverse metal strips and the C-shaped resonators, and a metal structure on the back surface of the dielectric substrate comprises two symmetrical metal bending resonators and a grounding metal sheet II. Compared with the original traveling wave type fin-line switch, the microwave millimeter wave switch is designed by adopting the resonance principle, a transition structure is not needed, an input signal directly acts on a switch circuit, the longitudinal size can be shortened from one wavelength to one quarter of the wavelength, and the miniaturization of the switch is realized.

Description

Miniaturized waveguide switch

Technical Field

The invention relates to the technical field of waveguide switches, in particular to a miniaturized waveguide switch.

Background

The microwave switch is an indispensable part in the fields of modern communication, sensing, radar, electronic warfare and the like, and has the main function of controlling the on-off of radio frequency signals. The microwave switch has various realization forms, and currently, the MMIC process or the planar circuit process is mainly adopted, and the PIN diode or the FET is used for controlling, but the insertion loss is large, and the power resistance is insufficient. The waveguide switch has the characteristics of low loss and high power resistance, is widely applied in a millimeter wave terahertz frequency band, and adopts two modes of mechanical control and electric control at present; the mechanical control loss is low, the power resistance is maximum, and the switching speed of a complex rotating structure is low, so that the requirement of a modern radar communication system cannot be met; the electric control waveguide switch is mainly realized by loading a PIN diode in the waveguide, and the switching speed can reach nanosecond level.

At present, most of electric control waveguide switches are realized by adopting a structure that a waveguide is transited to a fin line, and after a PIN diode is loaded on the fin line, the waveguide is transited to the waveguide. Zhao Yubo et al disclose a millimeter wave fin switch feed circuit (Zhao Yubo, Van Li Si, Wmin, Li Jianling, a millimeter wave fin switch feed circuit, Chinese invention patent, application No. 201710624001.7, published 2018.02.13) that achieves millimeter wave switching while suppressing higher order modes through a fin line transition structure and high impedance line feed. However, because two sections of gradually changing fin lines are required to be transited back to back, the size of the device is large, miniaturization is not facilitated, and meanwhile, the large size and the small feature size also put high requirements on an assembly process. There is therefore a need for a miniaturized waveguide switch that solves the above-mentioned problems.

Disclosure of Invention

The invention aims to provide a miniaturized waveguide switch based on a resonance structure to realize miniaturization and light weight of the waveguide switch structure aiming at the defects of the prior art.

In order to achieve the purpose, the invention adopts the technical scheme that:

a miniaturized waveguide switch comprises an upper cavity and a lower cavity which form a rectangular waveguide, and a dielectric substrate inserted into the center of an E surface of the rectangular waveguide, wherein a metal structure on the front side of the dielectric substrate comprises two symmetrical metal C-shaped resonators, two symmetrical transverse metal strips, a direct current feed circuit I, a direct current feed circuit II and a grounding metal sheet I, a PIN diode III and a PIN diode IV are connected between the transverse metal strips and the C-shaped resonators, and two symmetrical metal bent resonators and a grounding metal sheet II are arranged on a metal structure on the back side of the dielectric substrate.

The two symmetrical metal C-shaped resonators and the two symmetrical transverse metal strips form a rectangular ring, the first direct current feed circuit and the second direct current feed circuit are connected to the center of the transverse metal strips and are opposite to each other, anodes of the first PIN diode and the second PIN diode are connected to the edges of the transverse metal strips, cathodes of the first PIN diode and the second PIN diode are connected to the edges of the metal C-shaped resonators, cathodes of the third PIN diode and the fourth PIN diode are connected to the edges of the transverse metal strips, and anodes of the third PIN diode and the fourth PIN diode are connected to the edges of the C-shaped resonators.

Further, when a forward voltage is applied between the first direct current feed circuit and the second direct current feed circuit, all the PIN diodes are conducted, when a reverse voltage is applied between the first direct current feed circuit and the second direct current feed circuit, all the PIN diodes are cut off, and the circuit structure of the first direct current feed circuit and the second direct current feed circuit is that an open circuit is presented in an operating frequency band, and a short circuit is presented in a direct current condition.

Further, the waveguide structure formed by the upper cavity and the lower cavity adopts one of a standard rectangular waveguide, a ridge waveguide and a rectangular waveguide with any size.

Furthermore, the front surface of the dielectric substrate is provided with four first grounding metal sheets and four second grounding metal sheets, the four first grounding metal sheets are respectively arranged on the upper side and the lower side of the metal C-shaped resonator and on the left side and the right side of the transverse metal strip, two rows of metalized through holes are paved on the front surface of the first grounding metal sheet, the number of the metalized through holes in each row is six, the back surface of the dielectric substrate is provided with the second grounding metal sheets, and the first grounding metal sheets and the second grounding metal sheets are connected with the upper waveguide wall and the lower waveguide wall of the waveguide through the metalized through holes. And are

Compared with the prior art, the invention has the following beneficial effects:

(1) compared with the original traveling wave type fin-line switch, the microwave millimeter wave switch is designed by adopting the resonance principle, a transition structure is not needed, an input signal directly acts on a switch circuit, the longitudinal size can be shortened from one wavelength to one quarter of the wavelength, and the miniaturization of the switch is realized.

(2) The invention can realize the free regulation and control of the pass band and stop band bandwidth and isolation of the switch by adjusting the relative size and position of the resonance structure, thereby realizing the filtering effect at the same time, saving a first-stage filter for the system and reducing the complexity.

(3) The invention has simple structure and low cost, only needs to be composed of an upper metal cavity, a lower metal cavity and a medium substrate, all metal structures are polygons with regular shapes, is convenient to process, and can reduce the size of the cavity and the area of the high-frequency plate by miniaturization design so as to achieve the purpose of reducing the cost.

Drawings

FIG. 1 is an expanded view of the structure of the present invention;

FIG. 2 is a schematic top view of the lower chamber of the present invention;

FIG. 3 is a schematic front view of a dielectric substrate according to the present invention;

FIG. 4 is a schematic diagram of a backside structure of a dielectric substrate according to the present invention;

FIG. 5 is a schematic diagram of transmission characteristics according to an embodiment of the present invention;

fig. 6 is an equivalent circuit schematic diagram of a waveguide switch of the present invention.

In the figure: 1. an upper cavity; 2. a lower cavity; 3. a dielectric substrate; 31. a metallic C-shaped resonator; 32. a transverse metal strip; 33. metallizing the through-hole; 34. a first grounding metal sheet; 351. a first direct current feed circuit; 352. a second direct current feed circuit; 36. a metal bending resonator; 37. a second grounding metal sheet; 51. a PIN diode I; 51. a PIN diode II; 53. a PIN diode III; 54. and a PIN diode IV.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As shown in fig. 1 to 5, the miniaturized waveguide switch provided by this embodiment includes an upper cavity 1 and a lower cavity 2 constituting a rectangular waveguide, and a dielectric substrate 3 inserted into the center of an E-plane of the rectangular waveguide, where a front metal structure of the dielectric substrate 3 includes two symmetric metal C-shaped resonators 31, two symmetric transverse metal strips 32, a first dc feed circuit 351, a second dc feed circuit 352, and four first ground metal strips 34, a first PIN diode 51, a second PIN diode 52, a third PIN diode 53, and a fourth PIN diode 54 are connected between the transverse metal strips 32 and the C-shaped resonators 31, the four first ground metal strips 34 are respectively disposed on upper and lower sides of the metal C-shaped resonators 31, and left and right sides of the transverse metal strips 32, two rows of metalized through holes 33 are laid on a front surface of the first ground metal strips 34, and the number of each row of metalized through holes 33 is six. The metal structure on the back of the dielectric substrate 3 is provided with two symmetrical metal bending resonators 36 and a second grounding metal sheet 37, and the first grounding metal sheet 34 and the second grounding metal sheet 37 are directly connected with the upper waveguide wall and the lower waveguide wall of the waveguide through the metalized through hole 33.

The two symmetrical metal C-shaped resonators 31 and the two symmetrical transverse metal strips 32 form a rectangular ring, a first direct current feed circuit 351 and a second direct current feed circuit 352 are connected to the center of the transverse metal strips 32 and are opposite to each other, anodes of a first PIN diode 51 and a second PIN diode 52 are connected to the edge of the transverse metal strips 32, cathodes of the first PIN diode 51 and the second PIN diode 52 are connected to the edge of the metal C-shaped resonators 31, cathodes of a third PIN diode 53 and a fourth PIN diode 54 are connected to the edge of the transverse metal strips 32, and anodes of the third PIN diode 53 and the fourth PIN diode 54 are connected to the edge of the C-shaped resonators 31.

When a forward voltage is applied between the first direct current feed circuit 351 and the second direct current feed circuit 352, all the PIN diodes are conducted, two symmetrical transverse metal strips 32 of the two symmetrical metal C-shaped resonators 31, the first PIN diode 51, the second PIN diode 52, the third PIN diode 53 and the fourth PIN diode 54 form a rectangular ring resonator together, the rectangular ring resonator is coupled with the two symmetrical metal bent resonators 36 on the back surface of the dielectric substrate 3 to form a pass band, the switch is conducted, the bandwidth of the pass band can be adjusted by adjusting the size and the relative position of the rectangular ring resonator and the two symmetrical metal bent resonators 36, when a reverse voltage is applied between the first direct current feed circuit 351 and the second direct current feed circuit 352, all the PIN diodes are cut off, the two symmetrical metal C-shaped resonators 31 are mutually coupled through the cut-off capacitors of the PIN diodes and are simultaneously coupled with the two symmetrical metal bent resonators 36 on the back surface of the dielectric substrate 3, and (3) forming a stop band, closing the switch, and adjusting the relative positions of the metal C-shaped resonator 31 and the metal bent resonator 36 to adjust the bandwidth and isolation of the stop band.

The first dc feed circuit 351 and the second dc feed circuit 352 may adopt various circuit structures, and their functions are to present an open circuit in the operating frequency band and a short circuit in the case of dc. The waveguide structure formed by the upper cavity 1 and the lower cavity 2 can adopt one of a standard rectangular waveguide, a ridge waveguide and a rectangular waveguide with any size.

In this example, the miniaturized waveguide switch adopts the circuit schematic diagram shown in fig. 6, a WR-90 standard waveguide operating in an X band is selected as input and output, a PIN tube with MA-COM model MA4AGP907 is selected, the dielectric substrate 3 selected in the simulation design is Rogers RT/duroid5880, the dielectric constant of the Rogers RT/duroid5880 is 2.2, the thickness of the Rogers RT/duroid is 0.254mm, and the loss tangent of the Rogers RT/duroid is 0.0009, wherein the connection mode of the circuit structure on the dielectric substrate 3 and the PIN tube is shown in fig. 2 and 3, and in this example, the direct current feed structure selects a high-resistance line loaded open-circuit quarter-wave resonator.

The full-wave simulation result in fig. 5 shows that the miniaturized waveguide switch adopting the resonant structure has low loss, high isolation, certain filtering characteristics, flexible and convenient design, can be easily transplanted to other frequencies, and has high application value.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A miniaturized waveguide switch comprises an upper cavity (1) and a lower cavity (2) which form a rectangular waveguide, and a dielectric substrate (3) inserted into the center of an E surface of the rectangular waveguide, and is characterized in that: the front metal structure of the dielectric substrate (3) comprises two symmetrical metal C-shaped resonators (31), two symmetrical transverse metal strips (32), a first direct current feed circuit (351), a second direct current feed circuit (352) and a first grounding metal sheet (34), a PIN diode I (51), a PIN diode II (52), a PIN diode III (53) and a PIN diode IV (54) are connected between the transverse metal strips (32) and the C-shaped resonators (31), and two symmetrical metal bending resonators (36) and a second grounding metal sheet (37) are arranged on the back metal structure of the dielectric substrate (3);

the two symmetrical metal C-shaped resonators (31) and the two symmetrical transverse metal strips (32) form a rectangular ring, the direct current feed circuit I (351) and the direct current feed circuit II (352) are connected to the center of the transverse metal strips (32) and are opposite to each other, anodes of the PIN diodes I (51) and the PIN diodes II (52) are connected to the edge of the transverse metal strips (32), cathodes of the PIN diodes I (51) and the PIN diodes II (52) are connected to the edge of the metal C-shaped resonators (31), cathodes of the PIN diodes III (53) and the PIN diodes IV (54) are connected to the edge of the transverse metal strips (32), and anodes of the PIN diodes III (53) and the PIN diodes IV (54) are connected to the edge of the C-shaped resonators (31).

2. A miniature waveguide switch as defined in claim 1, wherein: when a forward voltage is applied between the first direct current feed circuit (351) and the second direct current feed circuit (352), all PIN diodes are conducted, when a reverse voltage is applied between the first direct current feed circuit (351) and the second direct current feed circuit (352), all PIN diodes are cut off, and the circuit structures of the first direct current feed circuit (351) and the second direct current feed circuit (352) are open at an operating frequency band and short-circuited at a direct current.

3. A miniature waveguide switch as defined in claim 1, wherein: the waveguide structure formed by the upper cavity (1) and the lower cavity (2) can adopt standard rectangular waveguides, ridge waveguides or rectangular waveguides with any size.

4. A miniature waveguide switch as defined in claim 1, wherein: the front of medium base plate (3) is provided with four ground connection sheetmetals (34), four ground connection sheetmetal (34) set up respectively in the upper and lower both sides of metal C shape resonator (31) to and the left and right sides of horizontal metal strip (32), and two rows of metallized through-holes (33) have been laid on ground connection sheetmetal (34) front, and the quantity of every row of metallized through-hole (33) is six, ground connection sheetmetal (34) that medium base plate (3) front set up and ground connection sheetmetal (37) that medium base plate (3) back set up are connected with the upper and lower waveguide wall of waveguide through metallized through-hole (33).