CN114167689B - Optical proximity effect preprocessing method, device, medium and equipment - Google Patents
Optical proximity effect preprocessing method, device, medium and equipment Download PDFInfo
- Publication number
- CN114167689B CN114167689B CN202111325847.3A CN202111325847A CN114167689B CN 114167689 B CN114167689 B CN 114167689B CN 202111325847 A CN202111325847 A CN 202111325847A CN 114167689 B CN114167689 B CN 114167689B
- Authority
- CN
- China
- Prior art keywords
- area
- region
- correction
- layout
- corrected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000000694 effects Effects 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 238000007781 pre-processing Methods 0.000 title claims description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000002203 pretreatment Methods 0.000 claims abstract description 5
- 239000011247 coating layer Substances 0.000 claims description 3
- 238000004590 computer program Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 238000005253 cladding Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
The invention belongs to the technical field of microelectronics, and particularly relates to an optical proximity effect pretreatment method and a device, medium and equipment corresponding to the optical proximity effect pretreatment method; through correction of the circuit layout, potential breaking risk is eliminated; the related method, device and the like are suitable for scenes with high local layout compactness, and can avoid line end retraction caused by high etching rate, so that the hole coating rate is ensured, and the phenomena such as line breakage and the like are avoided.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to an optical proximity effect pretreatment method, an optical proximity effect pretreatment device, a medium and optical proximity effect pretreatment equipment.
Background
In the prior art, in the pretreatment process of OPC (Optical Proximity Correction ), the line end of a layout is treated in advance, and then the target size of a one-dimensional area is regulated; when the line end faces the minimum line width distance, the extension cannot be realized; particularly in the area with high local layout compactness, the high etching rate can cause line end recession, so that the hole coating is poor, and further line breakage is caused.
Disclosure of Invention
The invention discloses an optical proximity effect pretreatment method, a corresponding treatment device, a medium and correction or processing equipment.
In the data acquisition step, the method initializes related data by acquiring position data of a first layout area and a second layout area; wherein the second layout region fully or partially encloses the first layout region; in general, the second layout will surround the first layout from three directions.
In the flaw positioning step, position data of a first line end in a first plate region are obtained; and the range of the area to be corrected is defined by rotating the first extending direction to the second extending direction and the third extending direction within the first plate area.
The direction of the first line end extension line is a first extension direction; the first wire end (100) is surrounded by or opposite to the area to be corrected; the region to be corrected is a region, which surrounds the first line end or is opposite to the first line end, of the second layout region between the second extending direction and the third extending direction;
in the data processing step, position data of the first correction area is obtained; the first correction area is obtained by extending the first line end along the first extending direction.
Further, by acquiring position data of the second correction region; the second correction area is obtained by shrinking one side of the area to be corrected, which is close to the first line end, along the first extending direction.
Further, by acquiring position data of the third correction region; the third correction area is obtained by extending one side of the area to be corrected away from the first line end.
In the correction output step, the proximity effect correction or other processes are completed by correcting the original pattern position data; wherein the master map comprises a first layout area and a second layout area.
Further, by acquiring the first correction region, the second correction region and/or the third correction region, the topological relation between the first layout region and the second layout region is unchanged.
In particular, the minimum line width of the first layout area and the minimum line width of the second layout area are obtained; the minimum line width is shown in the first extending direction of the first line end, and the position needing to be corrected is usually in the area or the position where the layout feature pattern is compact.
Further, after the correction, the distance between the first correction region and the second correction region may be made not smaller than the minimum line width.
Further, other compensation operations may be initiated during the preprocessing step; after the optical proximity effect correction is performed on the first layout area and the second layout area respectively, the thickness of the cladding layer of the improved cladding area can be 0-10 nm.
In particular, the first correction region is obtained by extending the first wire end by a first offset distance along a first extending direction; the second correction area is obtained by shrinking a second offset distance along the first extension direction on one side of the area to be corrected, which is close to the first line end; the third correction area is obtained by extending the side of the area to be corrected away from the first line end by a third offset distance.
Typically, the values of the first offset distance, the second offset distance, and the third offset distance are the same.
Further, we can also implement an optical proximity effect pretreatment transpose comprising: the device comprises a data acquisition part, a flaw positioning part, a data processing part and a correction output part.
The data acquisition part acquires position data of the first layout area and the second layout area; wherein the second layout region fully or partially encloses the first layout region;
the data acquisition part also acquires position data of a first line end in the first edition region; the direction of the first line end extension line is a first extension direction;
the flaw positioning part rotates the first extending direction to the second extending direction and the third extending direction in the first plate region; at this time, the first wire end is surrounded by the area to be corrected or is opposite to the position of the area to be corrected; the region to be corrected is a region, in which the second layout region surrounds the first line end or is opposite to the first line end, between the second extending direction and the third extending direction.
In the data processing part, position data of the first correction area are obtained; the first correction area is obtained by extending the first line end along a first extending direction; the data processing part further acquires the position data of the second correction area; the second correction area is obtained by shrinking one side, close to the first line end, of the area to be corrected along the first extending direction; the data processing part further acquires the position data of the third correction area; the third correction area is obtained by extending one side of the area to be corrected away from the first line end.
Correcting the original pattern position data at a correction output part to complete proximity effect correction or other processes; wherein the master map comprises a first layout area and a second layout area.
Further, after the first correction area, the second correction area and/or the third correction area are obtained and corrected, the topological relation between the first layout area and the second layout area is unchanged.
The possible positions of flaws can be confirmed by acquiring the minimum line widths of the first layout area and the second layout area; wherein the minimum line width occurs in a first direction of extension of the first line end.
Further, the distance between the corrected first correction region and the second correction region should be not less than the minimum line width before correction; when necessary, optical proximity effect correction can be performed on the first layout area and the second layout area respectively; wherein the thickness of the coating layer of the improved coating region is generally 0 to 10nm.
Further, the first correction region is obtained by extending the first wire end by a first offset distance along the first extending direction; the second correction area is obtained by shrinking a second offset distance along the first extension direction on one side of the area to be corrected, which is close to the first line end; the third correction area is obtained by extending a third offset distance from one side of the area to be corrected, which is far away from the first line end; at this time, the first offset distance, the second offset distance, and the third offset distance may be equal to each other.
The above method may further be stored in a computer storage medium; wherein the computer program, when executed by the microprocessor, implements any of the methods as claimed in the present invention.
Further, the method, the device, the medium, and the like of the previous item can be implemented together with at least one round in the CAD device according to the compatible standard.
Through the implementation of the invention, the technical effects are as follows: by adjusting the adjacent layout of the high-density line end, the hole coating rate is improved.
It should be noted that, the terms "first", "second", and the like are used herein merely to describe each component in the technical solution, and do not constitute a limitation on the technical solution, and are not to be construed as indicating or implying importance of the corresponding component; elements with "first", "second" and the like mean that in the corresponding technical solution, the element includes at least one.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the technical effects, technical features and objects of the present invention will be further understood, and the present invention will be described in detail below with reference to the accompanying drawings, which form a necessary part of the specification, and together with the embodiments of the present invention serve to illustrate the technical solution of the present invention, but not to limit the present invention.
Like reference numerals in the drawings denote like parts, in particular:
FIG. 1 is a schematic diagram of an original plate structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a pretreated structure according to an embodiment of the present invention;
FIG. 3 is a diagram showing comparison of conventional OPC and OPC in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating an embodiment of the invention for improving the hole coating effect;
FIG. 5 is a schematic diagram of a prior art hole coating;
FIG. 6 is a schematic diagram of a hole coating in an embodiment of the method;
FIG. 7 is an ADICD image of a line width measurement scanning electron microscope according to an embodiment of the present invention;
FIG. 8 is an AEICD image of a line width measurement scanning electron microscope according to an embodiment of the invention;
FIG. 9 is a diagram showing a prior art image overlay with an embodiment of the present invention;
FIG. 10 is a flow chart of an embodiment of the method of the present invention;
FIG. 11 is a system block diagram of an embodiment of the apparatus of the present invention;
wherein:
1-product data before correction, 2-product data after correction;
10-data acquisition, namely 11-a data acquisition part;
20-flaw positioning step, 22-flaw positioning part;
30-a data processing step, 33-a data processing section;
40-a correction output step, 44-a correction output unit;
100-line end portion, 101, line end extension;
200-holes or through-holes,
300-line end opposite layout, 301-partial space yielded by the opposite layout after being moved,
302, a space which moves backwards, 303, a partial space which extends to the far end of the layout;
400-minimum linewidth distance of the line end of the original layout or measured graph from the opposite layout or measured graph,
401-the distance between the wire end and the opposite layout after pretreatment;
500-improved cladding area.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. Of course, the following specific examples are set forth only to illustrate the technical solution of the present invention, and are not intended to limit the present invention. Furthermore, the parts expressed in the examples or drawings are merely illustrative of the relevant parts of the present invention, and not all of the present invention.
As shown in fig. 10, a flow chart of an embodiment of the method of the present invention is obtained by obtaining position data of a first layout area and a second layout area; these position data may be data of the above-described layout in the computer graphics sense, such as coordinate values.
The original plate diagram structure diagram of the embodiment of the invention shown in fig. 1 shows that the second layout area fully or partially surrounds the first layout area.
Specifically, position data of the first line end 100 in the first version region is acquired; wherein, the direction of the extension line of the first line end 100 is the first extension direction; the first extending direction is rotated to the second extending direction and the third extending direction in the first version region, and at this time, the first line end 100 is surrounded by or opposite to the region to be corrected.
The area to be corrected is an area where the second layout area surrounds the first line end 100 or is opposite to the first line end 100 between the second extending direction and the third extending direction.
As shown in fig. 2, 3, 4, 6, and 9, position data of the first correction region 101 is acquired; the first correction area 101 is obtained by extending the first wire end 100 along the first extending direction.
Similarly, position data of the second correction area 302 is acquired; the second correction area 302 is obtained by shrinking a side of the area to be corrected, which is close to the first line end 100, along the first extending direction.
Also similarly, position data of the third correction region 303 is acquired; wherein the third correction region 303 is obtained by extending the side of the region to be corrected away from the first wire end 100.
Further, by correcting the original pattern position data, the proximity effect correction or other processes are completed; the original edition graph comprises a first domain area and the second domain area.
Further, as shown in fig. 2, 3, 4, 6 and 9, after the first correction region 101, the second correction region 302 and/or the third correction region 303 are obtained, the topological relationship between the first layout region and the second layout region is unchanged.
Simultaneously, obtaining the minimum line width of the first layout area and the minimum line width of the second layout area; wherein the minimum line width occurs in the first extension direction of the first line end 100.
Further, the distance between the first correction region 101 and the second correction region is not less than the minimum line width.
In addition, optical proximity effect correction can be performed on the first layout area and the second layout area respectively, so that the correction effect is further improved.
Wherein, as shown in fig. 4, the coating thickness of the improved coating region 500 is 0 to 10nm.
Still further improvements include that the first correction region 101 thereof is obtained by extending the first wire end 100 by a first offset distance along the first extending direction.
Similarly, the second correction region 302 is obtained by shrinking the side of the region to be corrected close to the first wire end 100 by the second offset distance in the first extending direction.
Also similarly, the third correction region 303 is obtained by extending the region to be corrected by a third offset distance from the side of the first wire end 100.
Further, the first offset distance, the second offset distance, and the third offset distance may all be equal.
By implementing the above method, an embodiment thereof includes implementing an optical proximity effect preprocessing transpose, as shown in fig. 11, including a data acquisition portion 11, a flaw positioning portion 22, a data processing portion 33, and a correction output portion 44.
The data acquisition part 11 acquires position data of the first layout area and the second layout area; the second layout region fully or partially encloses the first layout region.
In addition, the data acquisition unit 11 acquires the position data of the first line end 100 in the first version region; wherein, the direction of the extension line of the first line end 100 is the first extension direction.
The defect positioning portion 22 of fig. 11 rotates the first extending direction to the second extending direction and the third extending direction in the first plate area, and the first wire end 100 is surrounded by or opposite to the area to be corrected; the region to be corrected is a region in which the second layout region surrounds the first line end 100 or is opposite to the first line end 100 between the second extending direction and the third extending direction.
As shown in fig. 11, the data processing section 33 acquires position data of the first correction region 101; the first correction area 101 is obtained by extending the first wire end 100 along the first extending direction.
Wherein the data processing section 33 further acquires the position data of the second correction region 302; the second correction area 302 is obtained by shrinking a side of the area to be corrected, which is close to the first line end 100, along the first extending direction.
In addition, the data processing section 33 further acquires the position data of the third correction region 303; wherein the third correction region 303 is obtained by extending the side of the region to be corrected away from the first wire end 100.
As shown in fig. 11, the correction output unit 44 corrects the original pattern position data to complete the proximity effect correction or other processes; wherein the master map comprises a first layout area and a second layout area.
As shown in fig. 2, 3, 4, 6, and 9, the topology relationship between the first layout region and the second layout region is unchanged by acquiring the first correction region 101, the second correction region 302, and/or the third correction region 303.
In addition, the minimum line width of the first layout area and the minimum line width of the second layout area are obtained; wherein a minimum line width occurs in said first direction of extension of the first line end 100.
Further, the distance between the first correction region 101 and the second correction region may be made not smaller than the minimum line width; and performing optical proximity effect correction on the first layout area and the second layout area respectively.
As shown in fig. 4, the cladding layer thickness of the modified cladding region 500 is 0 to 10nm.
Further, the first correction region 101 is obtained by extending the first wire end 100 by a first offset distance along the first extending direction; the second correction region 302 is obtained by shrinking the side of the region to be corrected, which is close to the first wire end 100, by a second offset distance along the first extension direction; the third correction region 303 is obtained by extending the region to be corrected by a third offset distance from the side of the first wire end 100.
Further, the first offset distance, the second offset distance, and the third offset distance may be set to be equal to each other; with fig. 4 and 6, it can be seen that the hole coverage rate is improved by adjusting the high-density line end adjacent layout.
It should be noted that the foregoing examples are merely for clearly illustrating the technical solution of the present invention, and those skilled in the art will understand that the embodiments of the present invention are not limited to the foregoing, and that obvious changes, substitutions or alterations can be made based on the foregoing without departing from the scope covered by the technical solution of the present invention; other embodiments will fall within the scope of the invention without departing from the inventive concept.
Claims (12)
1. An optical proximity effect pretreatment method, comprising:
acquiring position data of a first layout area and a second layout area; wherein the second layout region fully or partially encloses the first layout region;
acquiring position data of a first line end (100) in the first version region; wherein the direction of the extension line of the first line end (100) is a first extension direction;
rotating the first extension direction to a second extension direction and a third extension direction in the first edition region, wherein the first wire end (100) is surrounded by or opposite to the region to be corrected; the region to be corrected is a region in which the second layout region surrounds the first line end (100) or is opposite to the first line end (100) between the second extending direction and the third extending direction;
acquiring position data of a first correction area (101); wherein the first correction area (101) is obtained by extending the first wire end (100) along the first extending direction;
acquiring position data of the second correction area (302); wherein the second correction area (302) is obtained by shrinking one side of the area to be corrected, which is close to the first wire end (100), along the first extending direction;
acquiring position data of a third correction area (303); wherein the third correction region (303) is obtained by extending the side of the region to be corrected away from the first wire end (100);
correcting the original pattern position data to complete the proximity effect correction or other processes; wherein the master map includes the first layout region and the second layout region.
2. The method of claim 1, wherein:
after the first correction area (101), the second correction area (302) and/or the third correction area (303) are obtained, the topological relation between the first layout area and the second layout area is unchanged;
the method is further characterized by obtaining the minimum line width of the first layout area and the minimum line width of the second layout area; wherein the minimum line width occurs in the first direction of extension of the first line end (100).
3. The method of claim 2, wherein:
a distance between the first correction region (101) and the second correction region (302) is not smaller than the minimum line width.
4. A method as claimed in claim 3, wherein:
respectively carrying out optical proximity effect correction on the first layout area and the second layout area;
wherein the coating layer thickness of the modified coating region (500) is 0 to 10nm.
5. The method of claim 1, wherein:
the first correction area (101) is obtained by extending the first wire end (100) by a first offset distance along the first extending direction;
the second correction area (302) is obtained by shrinking a side of the area to be corrected, which is close to the first line end (100), by a second offset distance along the first extending direction;
the third correction region (303) is obtained by extending a third offset distance from a side of the region to be corrected remote from the first line end (100).
6. The method of claim 5, wherein:
the first offset distance, the second offset distance and the third offset distance are equal.
7. An optical proximity effect preprocessing device, comprising:
a data acquisition unit (11), a flaw positioning unit (22), a data processing unit (33), and a correction output unit (44);
the data acquisition part (11) acquires position data of a first layout area and a second layout area; wherein the second layout region fully or partially encloses the first layout region;
the data acquisition part (11) also acquires position data of a first line end (100) in the first edition of drawing area; wherein the direction of the extension line of the first line end (100) is a first extension direction;
the flaw positioning part (22) rotates the first extending direction to a second extending direction and a third extending direction in the first edition area, and the first wire end (100) is surrounded by the area to be corrected or is opposite to the position of the area to be corrected; the region to be corrected is a region in which the second layout region surrounds the first line end (100) or is opposite to the first line end (100) between the second extending direction and the third extending direction;
a data processing unit (33) that acquires position data of the first correction region (101); wherein the first correction area (101) is obtained by extending the first wire end (100) along the first extending direction;
the data processing unit (33) further acquires position data of the second correction region (302); wherein the second correction area (302) is obtained by shrinking one side of the area to be corrected, which is close to the first wire end (100), along the first extending direction;
the data processing unit (33) further acquires position data of the third correction region (303); wherein the third correction region (303) is obtained by extending the side of the region to be corrected away from the first wire end (100);
the correction output part (44) corrects the original pattern position data to complete the proximity effect correction or other processes; wherein the master map includes the first layout region and the second layout region.
8. The apparatus of claim 7, wherein:
after the first correction area (101), the second correction area (302) and/or the third correction area (303) are obtained, the topological relation between the first layout area and the second layout area is unchanged;
obtaining the minimum line width of the first layout area and the second layout area; wherein the minimum line width occurs in the first direction of extension of the first line end (100).
9. The apparatus of claim 8, wherein:
a distance between the first correction region (101) and the second correction region is not less than the minimum line width; respectively carrying out optical proximity effect correction on the first layout area and the second layout area;
wherein the coating layer thickness of the modified coating region (500) is 0 to 10nm.
10. The apparatus of claim 7, wherein:
the first correction area (101) is obtained by extending the first wire end (100) by a first offset distance along the first extending direction;
the second correction area (302) is obtained by shrinking a side of the area to be corrected, which is close to the first line end (100), by a second offset distance along the first extending direction;
the third correction region (303) is obtained by extending a third offset distance from the side of the region to be corrected away from the first line end (100);
the first offset distance, the second offset distance and the third offset distance are equal.
11. A computer storage medium, comprising:
a storage medium body for storing a computer program;
the computer program, when executed by a microprocessor, implements the method according to any of claims 1-6.
12. A CAD apparatus, comprising:
the device of any one of claims 7-10;
and/or a storage medium according to claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111325847.3A CN114167689B (en) | 2021-11-10 | 2021-11-10 | Optical proximity effect preprocessing method, device, medium and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111325847.3A CN114167689B (en) | 2021-11-10 | 2021-11-10 | Optical proximity effect preprocessing method, device, medium and equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114167689A CN114167689A (en) | 2022-03-11 |
| CN114167689B true CN114167689B (en) | 2024-01-09 |
Family
ID=80478550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111325847.3A Active CN114167689B (en) | 2021-11-10 | 2021-11-10 | Optical proximity effect preprocessing method, device, medium and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114167689B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014081472A (en) * | 2012-10-16 | 2014-05-08 | Renesas Electronics Corp | Optical proximity effect correction method, processing unit, program, production method of mask, and production method of semiconductor device |
| CN110456615A (en) * | 2019-08-13 | 2019-11-15 | 上海华力集成电路制造有限公司 | Optical proximity correction method and its update the system |
| CN111443567A (en) * | 2019-01-16 | 2020-07-24 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction model and optical proximity correction method |
| CN113253565A (en) * | 2021-07-05 | 2021-08-13 | 南京晶驱集成电路有限公司 | Optical proximity correction method and device and electronic equipment |
| CN113495424A (en) * | 2020-04-08 | 2021-10-12 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and manufacturing method of mask |
-
2021
- 2021-11-10 CN CN202111325847.3A patent/CN114167689B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014081472A (en) * | 2012-10-16 | 2014-05-08 | Renesas Electronics Corp | Optical proximity effect correction method, processing unit, program, production method of mask, and production method of semiconductor device |
| CN111443567A (en) * | 2019-01-16 | 2020-07-24 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction model and optical proximity correction method |
| CN110456615A (en) * | 2019-08-13 | 2019-11-15 | 上海华力集成电路制造有限公司 | Optical proximity correction method and its update the system |
| CN113495424A (en) * | 2020-04-08 | 2021-10-12 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and manufacturing method of mask |
| CN113253565A (en) * | 2021-07-05 | 2021-08-13 | 南京晶驱集成电路有限公司 | Optical proximity correction method and device and electronic equipment |
Non-Patent Citations (1)
| Title |
|---|
| 光学邻近效应矫正(OPC)技术及其应用;蔡懿慈;周强;洪先龙;石蕊;王旸;;中国科学(E辑:信息科学);第37卷(第12期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114167689A (en) | 2022-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5559957B2 (en) | Pattern measuring method and pattern measuring device | |
| US6949320B2 (en) | Preparation method of exposure original plate | |
| US7139996B2 (en) | Mask pattern correction apparatus and mask pattern correction method and mask preparation method and method of production of a semiconductor device | |
| JP3708873B2 (en) | Pattern correction method and semiconductor device manufacturing method | |
| US7313781B2 (en) | Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device | |
| US6303251B1 (en) | Mask pattern correction process, photomask and semiconductor integrated circuit device | |
| JP4846635B2 (en) | Pattern information generation method | |
| JP2014530495A (en) | Determination of design coordinates for wafer defects | |
| US20080212869A1 (en) | Pattern correcting method of mask for manufacturing a semiconductor device | |
| CN1800985B (en) | Method for correcting mask pattern, photomask, semiconductor device, and method for fabricating the same | |
| US7818709B2 (en) | Circuit-pattern-data correction method and semiconductor-device manufacturing method | |
| CN114167689B (en) | Optical proximity effect preprocessing method, device, medium and equipment | |
| US8101324B2 (en) | Photomask manufacturing method, photomask manufacturing apparatus and photomask | |
| US20070006115A1 (en) | Method for verifying mask pattern data, method for manufacturing mask, mask pattern verification program, and method for manufacturing semiconductor device | |
| JP2013228971A (en) | Device and method for measuring semiconductor circuit pattern | |
| CN100592494C (en) | Method for correcting layout design for correcting metallic coating of contact hole | |
| JP2007298856A (en) | Semiconductor mask correction device and semiconductor mask correction method | |
| US20060014082A1 (en) | Method of correcting mask pattern | |
| JP4008934B2 (en) | Image data correction method, lithography simulation method, program, and mask | |
| KR100815953B1 (en) | Processing Method for Preventing Off Grid | |
| JP2004045432A (en) | Scanning electron microscope system and method of manufacturing integrated circuit | |
| JP2010066337A (en) | Method for creating pattern data, method for creating mask, method for manufacturing semiconductor device, and method and program for creating pattern | |
| JP2007109980A (en) | Method of correcting wiring | |
| CN113064321B (en) | Mask plate preparation method, storage medium and equipment | |
| JP2001013691A (en) | Method for correcting drawing shape distortion and patterning device for optical parts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |