CN114167689A - Optical proximity effect preprocessing method, device, medium and equipment - Google Patents
Optical proximity effect preprocessing method, device, medium and equipment Download PDFInfo
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- CN114167689A CN114167689A CN202111325847.3A CN202111325847A CN114167689A CN 114167689 A CN114167689 A CN 114167689A CN 202111325847 A CN202111325847 A CN 202111325847A CN 114167689 A CN114167689 A CN 114167689A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000000694 effects Effects 0.000 title claims abstract description 26
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 238000007781 pre-processing Methods 0.000 title claims abstract description 12
- 238000012937 correction Methods 0.000 claims abstract description 101
- 238000012545 processing Methods 0.000 claims description 16
- 238000005253 cladding Methods 0.000 claims description 12
- 238000004590 computer program Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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Abstract
The invention belongs to the technical field of microelectronics, and particularly relates to an optical proximity effect preprocessing method and a device, a medium and equipment corresponding to the optical proximity effect preprocessing method; potential open circuit risks are eliminated through correction of the circuit layout; the related method and device are suitable for scenes with high local layout compactness, and can avoid line end retraction caused by high etching rate, thereby ensuring the hole coating rate and avoiding the phenomena of line breakage and the like.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to an optical proximity effect preprocessing method, device, medium and equipment.
Background
In the prior art, during the preprocessing of OPC (Optical Proximity Correction), the line end of a layout is processed in advance, and then the target size of a one-dimensional region is adjusted; when the line end faces the minimum line width distance, extension cannot be realized; particularly, in the region with high compactness of the local layout, the high etching rate causes the line end to shrink back, so that the hole cladding rate is poor, and further the line breakage is caused.
Disclosure of Invention
The invention discloses an optical proximity effect pretreatment method, a corresponding treatment device, a medium and a correction or processing device.
In the data acquisition step, the method initializes the related data by acquiring the position data of the first layout area and the second layout area; the second layout area completely or partially surrounds the first layout area; in general, the second layout will surround the first layout from three directions.
In the flaw positioning step, the position data of a first line end in a first layout area is obtained; and the range of the area to be corrected is defined by rotating the first extending direction to a second extending direction and a third extending direction in the first layout area.
Wherein, the direction of the extension line of the first line end is a first extension direction; the first line end (100) is surrounded by the area to be corrected or is opposite to the area to be corrected; the region to be corrected is a region of the second layout region surrounding the first line end or opposite to the first line end between the second extending direction and the third extending direction;
in the data processing step, position data of the first correction area is acquired; the first correction area is obtained by extending the first line end along the first extending direction.
Further, by acquiring position data of the second correction area; the second correction area is obtained by shrinking one side of the area to be corrected, which is close to the first line end, along the first extension direction.
Further, by acquiring position data of a third correction area; the third correction area is obtained by extending one side of the area to be corrected, which is far away from the first line end.
In the correction output step, the proximity effect correction or other processes are completed by correcting the position data of the original layout; wherein the original plate comprises a first layout area and a second layout area.
Furthermore, by acquiring the first correction region, the second correction region and/or the third correction region, the topological relationship between the first layout region and the second layout region is not changed.
Particularly, the minimum line width of the first layout area and the second layout area is obtained; the minimum line width appears in the first extending direction of the first line end, and the position which needs to be corrected usually exists in the area or position where the layout characteristic graph is compact.
Further, after the correction, the distance between the first correction region and the second correction region may be made not less than the minimum line width.
Further, other compensation operations may be initiated at the preprocessing step; after the optical proximity effect correction is performed on the first layout area and the second layout area respectively, the thickness of the cladding layer of the cladding area after the optical proximity effect correction is performed may be 0 to 10 nm.
Particularly, the first correction area is obtained by extending the first line end along the first extending direction by a first offset distance; the second correction area is obtained by contracting one side of the area to be corrected, which is close to the first line end, by a second offset distance along the first extension direction; the third correction region is obtained by extending a third offset distance from one side of the region to be corrected, which is far away from the first line end.
Typically, the first offset distance, the second offset distance, and the third offset distance are the same value.
Further, we can also implement an optical proximity preprocessing apparatus, comprising: the device comprises a data acquisition part, a flaw positioning part, a data processing part and a correction output part.
The data acquisition part acquires position data of a first layout area and a second layout area; the second layout area completely or partially surrounds the first layout area;
the data acquisition part also acquires position data of a first line end in the first layout area; wherein, the direction of the extension line of the first line end is a first extension direction;
rotating the first extending direction to a second extending direction and a third extending direction in the first layout area by the flaw positioning part; at the moment, the first line end is surrounded by the area to be corrected or is opposite to the area to be corrected; the region to be corrected is a region of the second layout region surrounding the first line end or opposite to the first line end between the second extending direction and the third extending direction.
Acquiring position data of the first correction area in a data processing part; the first correction area is obtained by extending the first line end along a first extending direction; the data processing unit further acquires position data of the second correction area; the second correction area is obtained by contracting one side of the area to be corrected, which is close to the first line end, along the first extension direction; the data processing unit further acquires position data of a third correction area; the third correction area is obtained by extending one side of the area to be corrected, which is far away from the first line end.
Correcting the position data of the original layout at a correction output part to finish proximity effect correction or other processes; wherein the original plate comprises a first layout area and a second layout area.
Further, after the first correction area, the second correction area and/or the third correction area are obtained and corrected, the topological relation between the first layout area and the second layout area is unchanged.
By acquiring the minimum line width of the first layout area and the second layout area, the position where the flaw is likely to appear can be confirmed; wherein the minimum line width occurs in the first extending direction of the first line end.
Further, the distance between the first corrected area and the second corrected area after correction should be not less than the minimum line width before correction; if necessary, the optical proximity effect correction can be respectively carried out on the first layout area and the second layout area; wherein, the thickness of the coating layer in the improved coating region is generally 0 to 10 nm.
Further, the first correction area is obtained by extending the first line end along the first extending direction by a first offset distance; the second correction area is obtained by contracting one side of the area to be corrected, which is close to the first line end, by a second offset distance along the first extension direction; the third correction area is obtained by extending a third offset distance from one side of the area to be corrected, which is far away from the first line end; at this time, the first offset distance, the second offset distance, and the third offset distance may be equal to each other.
The method can be further stored in a computer storage medium; wherein the computer program, when executed by the microprocessor, implements any of the methods claimed herein.
Further, the above method may be implemented in a CAD apparatus and the preceding methods, apparatus, media, etc. may be implemented together in accordance with a compatible standard for at least one round.
Through the implementation of the invention, the technical effects are as follows: by adjusting the adjacent layout of the high-density line end, the hole coating rate is improved.
It should be noted that the terms "first", "second", and the like are used herein only for describing the components in the technical solution, and do not constitute a limitation on the technical solution, and are not understood as an indication or suggestion of the importance of the corresponding component; an element in the similar language "first", "second", etc. means that in the corresponding embodiment, the element includes at least one.
Drawings
To more clearly illustrate the technical solutions of the present invention and to facilitate further understanding of the technical effects, technical features and objects of the present invention, the present invention will be described in detail with reference to the accompanying drawings, which form an essential part of the specification, and which are used together with the embodiments of the present invention to illustrate the technical solutions of the present invention, but do not limit the present invention.
The same reference numerals in the drawings denote the same elements, and in particular:
FIG. 1 is a schematic diagram of a master pattern structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a pretreated structure according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a comparison between a conventional OPC and an OPC according to an embodiment of the present invention;
FIG. 4 is a schematic view of an embodiment of the present invention for improving the hole-covering effect;
FIG. 5 is a schematic diagram of hole coating in the prior art;
FIG. 6 is a schematic view of hole coating according to an embodiment of the present method;
FIG. 7 is an ADICD image of a scanning electron microscope for measuring line width according to an embodiment of the present invention;
FIG. 8 is an AEICD image of a scanning electron microscope for line width measurement according to an embodiment of the present invention;
FIG. 9 is a comparison of prior art scanning electron microscope image overlays with embodiments of the present invention;
FIG. 10 is a schematic flow chart of an embodiment of the method of the present invention;
FIG. 11 is a system block diagram of an embodiment of the apparatus of the present invention;
wherein:
1-product data before correction, 2-product data after correction;
10-data acquisition step, 11-data acquisition part;
20-flaw positioning step, 22-flaw positioning part;
30-data processing step, 33-data processing section;
40-correction output step, 44-correction output part;
100-a wire end portion, 101, a wire end extension;
200-a hole or a through-hole,
300-line end opposite face layout, 301-partial space left by the opposite face layout after moving,
302-space of backward shift, 303-partial space of remote expansion of the opposite layout;
400-minimum line width distance between the end of the original layout or measurement diagram and the opposite layout or measurement diagram,
401-distance between the line end and the opposite layout after preprocessing;
500-improved cladding area.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. Of course, the following specific examples are provided only for explaining the technical solutions of the present invention, and are not intended to limit the present invention. In addition, the portions shown in the embodiments or the drawings are only illustrations of the relevant portions of the present invention, and are not all of the present invention.
As shown in fig. 10, a flow diagram of an embodiment of the method of the present invention is obtained by obtaining position data of a first layout area and a second layout area; these position data may be data of the layout in a computer graphics sense, such as coordinate values.
As shown in fig. 1, the original layout structure of the embodiment of the present invention is a schematic diagram, and the second layout area completely or partially surrounds the first layout area.
Specifically, position data of the first terminal 100 in the first layout area is acquired; wherein, the direction of the extension line of the first line end 100 is the first extending direction; the first extending direction is rotated to the second extending direction and the third extending direction in the first layout area, and at this time, the first line end 100 is surrounded by the area to be corrected or is opposite to the area to be corrected.
The region to be corrected is a region of the second layout region surrounding the first line end 100 or opposite to the first line end 100 between the second extending direction and the third extending direction.
As shown in fig. 2, 3, 4, 6, and 9, position data of the first correction area 101 is acquired; the first modified area 101 is obtained by extending the first wire end 100 along a first extending direction.
Similarly, position data of the second correction region 302 is acquired; the second modified area 302 is obtained by shrinking the area to be modified from the side close to the first end 100 along the first extending direction.
Also similarly, position data of the third correction region 303 is acquired; the third modified region 303 is obtained by extending a side of the region to be modified away from the first wire end 100.
Furthermore, the proximity effect correction or other processes are completed by correcting the position data of the original layout; wherein the original map comprises a first layout area and the second layout area.
Further, as shown in fig. 2, fig. 3, fig. 4, fig. 6, and fig. 9, after the first correction region 101, the second correction region 302, and/or the third correction region 303 are obtained, the topological relationship between the first layout region and the second layout region is not changed.
Meanwhile, acquiring the minimum line width of the first layout area and the second layout area; wherein the minimum line width occurs in the first extending direction of the first line end 100.
Further, the distance between the first correction region 101 and the second correction region is not less than the minimum line width.
In addition, the optical proximity effect correction can be respectively carried out on the first layout area and the second layout area so as to further improve the correction effect.
As shown in fig. 4, the thickness of the cladding layer of the improved cladding region 500 is 0 to 10 nm.
Still further improvements include the first modified area 101 being obtained by the first wire end 100 extending a first offset distance in a first direction of extension.
Similarly, the second correction region 302 is obtained by contracting the side of the region to be corrected close to the first end 100 by a second offset distance along the first extending direction.
Similarly, the third modification region 303 is obtained by extending a third offset distance from the side of the region to be modified away from the first wire end 100.
Further, the first offset distance, the second offset distance and the third offset distance may all be equal.
By implementing the above method, an embodiment thereof includes implementing an optical proximity effect preprocessing device, as shown in fig. 11, including a data acquisition unit 11, a defect positioning unit 22, a data processing unit 33, and a correction output unit 44.
The data acquisition part 11 acquires position data of a first layout area and a second layout area; the second layout region wholly or partially surrounds the first layout region.
In addition, the data acquisition part 11 also acquires position data of the first terminal 100 in the first layout area; wherein, the direction of the extension line of the first line end 100 is the first extending direction.
As the defect positioning portion 22 in fig. 11 rotates the first extending direction to the second extending direction and the third extending direction in the first layout area, the first line end 100 is surrounded by the area to be corrected or is opposite to the area to be corrected; the region to be corrected is a region of the second layout region surrounding the first line end 100 or opposite to the first line end 100 between the second extending direction and the third extending direction.
As shown in fig. 11, the data processing section 33 acquires position data of the first correction area 101; the first modified area 101 is obtained by extending the first wire end 100 along a first extending direction.
Wherein the data processing section 33 further acquires position data of the second correction area 302; the second modified area 302 is obtained by shrinking the area to be modified from the side close to the first end 100 along the first extending direction.
Further, the data processing unit 33 further acquires position data of the third correction region 303; the third modified region 303 is obtained by extending a side of the region to be modified away from the first wire end 100.
Referring to fig. 11, the correction output unit 44 corrects the position data of the original layout to complete the proximity effect correction or other processes; wherein, the original plate graph comprises a first layout area and a second layout area.
As shown in fig. 2, 3, 4, 6 and 9, after the first correction region 101, the second correction region 302 and/or the third correction region 303 are obtained, the topological relation between the first layout region and the second layout region is not changed.
In addition, the minimum line width of the first layout area and the second layout area is obtained; wherein the minimum line width occurs in the first extending direction of the first line end 100.
Further, the distance between the first correction region 101 and the second correction region may be made not less than the minimum line width; and respectively carrying out optical proximity effect correction on the first layout area and the second layout area.
As shown in fig. 4, the cladding layer thickness of the improved cladding region 500 is 0 to 10 nm.
Further, the first modified area 101 is obtained by extending the first line end 100 along the first extending direction by a first offset distance; the second correction area 302 is obtained by contracting one side of the area to be corrected close to the first line end 100 along the first extending direction by a second offset distance; the third modified region 303 is obtained by extending a third offset distance from the side of the region to be modified away from the first wire end 100.
Further, the first offset distance, the second offset distance, and the third offset distance may be set equal to each other; with reference to fig. 4 and fig. 6, it can be seen that the hole coating rate is improved by adjusting the layout of the high-density line end adjacent to the high-density line end.
It should be noted that the above examples are only for clearly illustrating the technical solutions of the present invention, and those skilled in the art will understand that the embodiments of the present invention are not limited to the above contents, and obvious changes, substitutions or replacements can be made based on the above contents without departing from the scope covered by the technical solutions of the present invention; other embodiments will fall within the scope of the invention without departing from the inventive concept.
Claims (12)
1. An optical proximity effect preprocessing method, comprising:
acquiring position data of a first layout area and a second layout area; the second layout area completely or partially surrounds the first layout area;
acquiring position data of a first terminal (100) in the first layout area; wherein, the direction of the extension line of the first line end (100) is a first extension direction;
rotating the first extending direction to a second extending direction and a third extending direction in the first layout area, wherein the first line end (100) is surrounded by the area to be corrected or is opposite to the area to be corrected; the region to be corrected is a region of the second layout region surrounding the first line end (100) between the second extending direction and the third extending direction or opposite to the first line end (100);
acquiring position data of a first correction area (101); wherein the first correction area (101) is obtained by extending the first line end (100) along the first extending direction;
acquiring position data of a second correction area (302); wherein the second correction area (302) is obtained by shrinking the area to be corrected along the first extending direction from the side close to the first line end (100);
acquiring position data of a third correction area (303); wherein the third correction region (303) is obtained by extending one side of the region to be corrected, which is far away from the first line end (100);
correcting the position data of the original layout to finish proximity effect correction or other processes; wherein the original layout comprises the first layout region and the second layout region.
2. The method of claim 1, wherein:
after the first correction region (101), the second correction region (302) and/or the third correction region (303) are/is obtained, the topological relation between the first layout region and the second layout region is unchanged;
the method is also characterized in that the minimum line width of the first layout area and the second layout area is obtained; wherein the minimum line width occurs in the first extension direction of the first line end (100).
3. The method of claim 2, wherein:
a distance between the first correction region (101) and the second correction region (302) is not less than the minimum line width.
4. The method of claim 3, wherein:
respectively correcting the first layout area and the second layout area by optical proximity effect;
wherein the improved cladding region (500) has a cladding thickness of 0 to 10 nm.
5. The method of claim 1, wherein:
the first correction region (101) is obtained by extending the first line end (100) by a first offset distance in the first extending direction;
the second correction area (302) is obtained by contracting one side of the area to be corrected, which is close to the first line end (100), by a second offset distance along the first extension direction;
the third correction region (303) is obtained by extending a third offset distance from one side of the region to be corrected, which is far away from the first line end (100).
6. The method of claim 5, wherein:
the first offset distance, the second offset distance and the third offset distance are equal.
7. An optical proximity effect preprocessing apparatus, comprising:
a data acquisition unit (11), a flaw positioning unit (22), a data processing unit (33), and a correction output unit (44);
the data acquisition part (11) acquires position data of the first layout area and the second layout area; the second layout area completely or partially surrounds the first layout area;
the data acquisition part (11) also acquires the position data of a first line end (100) in the first layout area; wherein, the direction of the extension line of the first line end (100) is a first extension direction;
the flaw positioning part (22) rotates the first extending direction to a second extending direction and a third extending direction in the first layout area, and the first line end (100) is surrounded by the area to be corrected or is opposite to the area to be corrected; the region to be corrected is a region of the second layout region surrounding the first line end (100) between the second extending direction and the third extending direction or opposite to the first line end (100);
a data processing unit (33) acquires position data of the first correction region (101); wherein the first correction area (101) is obtained by extending the first line end (100) along the first extending direction;
the data processing unit (33) further acquires position data of a second correction area (302); wherein the second correction area (302) is obtained by shrinking the area to be corrected along the first extending direction from the side close to the first line end (100);
the data processing unit (33) further acquires position data of a third correction region (303); wherein the third correction region (303) is obtained by extending one side of the region to be corrected, which is far away from the first line end (100);
the correction output part (44) corrects the position data of the original layout to finish the proximity effect correction or other processes; wherein the original layout comprises the first layout region and the second layout region.
8. The apparatus of claim 7, wherein:
after the first correction region (101), the second correction region (302) and/or the third correction region (303) are/is obtained, the topological relation between the first layout region and the second layout region is unchanged;
acquiring the minimum line width of the first layout area and the second layout area; wherein the minimum line width occurs in the first extension direction of the first line end (100).
9. The apparatus of claim 8, wherein:
the distance between the first correction region (101) and the second correction region is not less than the minimum line width; respectively correcting the first layout area and the second layout area by optical proximity effect;
wherein the improved cladding region (500) has a cladding thickness of 0 to 10 nm.
10. The apparatus of claim 7, wherein:
the first correction region (101) is obtained by extending the first line end (100) by a first offset distance in the first extending direction;
the second correction area (302) is obtained by contracting one side of the area to be corrected, which is close to the first line end (100), by a second offset distance along the first extension direction;
the third correction region (303) is obtained by extending a third offset distance from one side of the region to be corrected, which is far away from the first line end (100);
the first offset distance, the second offset distance and the third offset distance are equal.
11. A computer storage medium, comprising:
a storage medium body for storing a computer program;
the computer program, when executed by a microprocessor, implements the method of any of claims 1-6.
12. A CAD apparatus, comprising:
the apparatus of any of claims 7-10;
and/or a storage medium according to claim 11.
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- 2021-11-10 CN CN202111325847.3A patent/CN114167689B/en active Active
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| JP2014081472A (en) * | 2012-10-16 | 2014-05-08 | Renesas Electronics Corp | Optical proximity effect correction method, processing unit, program, production method of mask, and production method of semiconductor device |
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