CN114161594B - Tellurium-zinc-cadmium single crystal multi-wire cutting mortar and cutting process - Google Patents
Tellurium-zinc-cadmium single crystal multi-wire cutting mortar and cutting process Download PDFInfo
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- CN114161594B CN114161594B CN202111409098.2A CN202111409098A CN114161594B CN 114161594 B CN114161594 B CN 114161594B CN 202111409098 A CN202111409098 A CN 202111409098A CN 114161594 B CN114161594 B CN 114161594B
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- 238000005520 cutting process Methods 0.000 title claims abstract description 137
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 39
- 239000004570 mortar (masonry) Substances 0.000 title claims abstract description 33
- 239000002173 cutting fluid Substances 0.000 claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000000149 penetrating effect Effects 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 12
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000013543 active substance Substances 0.000 claims abstract description 9
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- 239000002738 chelating agent Substances 0.000 claims abstract description 9
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims abstract description 7
- 239000002002 slurry Substances 0.000 claims abstract description 6
- 238000005406 washing Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 8
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical group [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000001509 sodium citrate Substances 0.000 claims description 6
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 6
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 6
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- CYDQOEWLBCCFJZ-UHFFFAOYSA-N 4-(4-fluorophenyl)oxane-4-carboxylic acid Chemical compound C=1C=C(F)C=CC=1C1(C(=O)O)CCOCC1 CYDQOEWLBCCFJZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 2
- ABBQHOQBGMUPJH-UHFFFAOYSA-M Sodium salicylate Chemical compound [Na+].OC1=CC=CC=C1C([O-])=O ABBQHOQBGMUPJH-UHFFFAOYSA-M 0.000 claims description 2
- 229960002089 ferrous chloride Drugs 0.000 claims description 2
- 239000011790 ferrous sulphate Substances 0.000 claims description 2
- 235000003891 ferrous sulphate Nutrition 0.000 claims description 2
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 claims description 2
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 2
- 229910000359 iron(II) sulfate Inorganic materials 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 229960001790 sodium citrate Drugs 0.000 claims description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical group [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 2
- 239000001540 sodium lactate Substances 0.000 claims description 2
- 229940005581 sodium lactate Drugs 0.000 claims description 2
- 235000011088 sodium lactate Nutrition 0.000 claims description 2
- 229960004025 sodium salicylate Drugs 0.000 claims description 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052746 lanthanum Inorganic materials 0.000 description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010730 cutting oil Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 penetrant Substances 0.000 description 1
- 229940093429 polyethylene glycol 6000 Drugs 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000000528 statistical test Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of crystal cutting, and discloses tellurium-zinc-cadmium single crystal multi-wire cutting mortar and a cutting process. The cutting mortar consists of silicon carbide powder and cutting fluid, wherein the cutting fluid consists of the following components: 30-90% of polyethylene glycol, 5-10% of alkaline substances, 1-5% of penetrating agents, 0.5-5% of active agents, 0.5-5% of chelating agents, 0-55% of deionized water, 0.01-0.1% of catalysts and 0.5-2% of oxidizing agents. The cutting process comprises the steps of placing a tellurium-zinc-cadmium crystal bar on a multi-wire cutting machine table for multi-wire cutting, wherein the working mode of the cutting table is from bottom to top; and after cutting, washing the cutting slurry by using water, and performing glue melting, cleaning and drying on the cut wafer to obtain the tellurium-zinc-cadmium wafer. The cutting mortar provided by the invention is matched with specific cutting process parameters, so that the tellurium-zinc-cadmium cutting sheet with high flatness and low surface damage layer can be obtained. Has the advantages of low cost, high cutting speed and the like.
Description
Technical Field
The invention belongs to the technical field of crystal cutting, and particularly relates to tellurium-zinc-cadmium single crystal multi-wire cutting mortar and a cutting process.
Background
Cadmium zinc telluride is a wide bandgap II-VI compound semiconductor, can be regarded as a ternary compound semiconductor formed by solid solution of CdTe and ZnTe, and has excellent performances such as large atomic number, large bandgap, high resistivity and the like. By adjusting Zn content in tellurium-zinc-cadmium, tellurium-zinc-cadmium with different lattice constants is modulated, so that the tellurium-zinc-cadmium is completely matched with tellurium-cadmium-mercury (HgCdTe) materials with any components, quasi homoepitaxy is realized, and defects caused by lattice mismatch are reduced.
Cadmium zinc telluride has low hardness and high brittleness, so that the processing of the crystal is difficult. The monocrystal Te-Zn-Cd is changed into Te-Zn-Cd wafer, and the inner circle cutting mode is usually adopted in the current crystal cutting. However, the thickness of the blade edge makes the loss of wafer cutting larger, and the internal circular saw can vibrate in the process of taking out the blade, so that the thin sheet is difficult to take out, and the waste of crystals is very easy to cause. Cadmium zinc telluride crystals are relatively expensive, and thus increasing the number of pieces per unit length of crystal is a focus of attention. During the processing of the crystal, the quality of the cut piece directly affects the subsequent processing steps of the wafer and the final product quality. Meanwhile, how to obtain a damaged layer which is free of saw lines, good in flatness parameters and shallow is a problem to be solved at present.
Multi-wire cutting is a novel cutting method for simultaneously cutting hard and brittle materials such as semiconductors into hundreds of sheets at one time by taking an abrasive into a semiconductor processing area for grinding through high-speed reciprocating motion of metal wires. The numerical control multi-wire saw gradually replaces the traditional internal circular cutting, and is mainly used for cutting and processing silicon wafers at present.
A method for sectionally cutting silicon carbide crystals by a multi-wire cutting machine is disclosed in chinese patent application CN101979235a, for example. The cutting line of the multi-wire cutting machine adopts a steel wire with the diameter of 100 to 150 micrometers, mortar adopts a mixture of diamond micro powder with the particle diameter of 5 micrometers and cutting oil, and the silicon carbide crystal fed by a workbench is ground and cut by carrying the mortar by utilizing the high-speed movement of the steel wire, and the concrete steps are as follows: (1) bonding: bonding crystals, namely bonding the column heads and the tail parts of the silicon carbide crystals to be cut, and fixing the silicon carbide crystals on a workbench of a multi-wire cutting machine; (2) winding: after the tension of the cutting machine is calibrated, the cutting steel wires are uniformly distributed on a winding grooved wheel of the multi-wire cutting machine; (3) Setting cutting speed, guniting amount, steel wire tension and heat engine time; (4) Installing a mortar protection baffle to enable the multi-wire cutting machine to enter a cutting state; (5) And after the cutting is finished, removing the cut silicon carbide wafer from the workbench. Patent CN112045874a discloses a process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafers, a plurality of 52 wires are used for slicing monocrystalline silicon rods, the feeding speed V1 of the plurality of 52 wires is 0.35-1.00 mm/min, the cutting speed V2 of the plurality of 52 wires is 1300-1400 m/min, the diameter of the monocrystalline silicon rod is 3-5 inches, the wire outlet end tension N1 of the plurality of 52 wires is 8 newtons, the wire collecting end tension N2 of the plurality of 52 wires is 8-8.5 newtons, the cutting temperature of the plurality of 52 wires is 19-21 ℃, and the cutting is performed by using the 52 wires, so that the waste of raw materials of the monocrystalline silicon rods is reduced.
However, the tellurium-zinc-cadmium single crystal has obvious differences in hardness and brittleness with the multi-wire cut silicon carbide crystal and single crystal silicon (the Mohs hardness of tellurium-zinc-cadmium is 2.3, which is a typical soft and brittle crystal, and the Mohs hardness of silicon carbide is 9.5), so that the development of the cutting mortar and the cutting process suitable for multi-wire cutting of tellurium-zinc-cadmium single crystals has obvious significance. The design of specific cutting mortar and reasonable and reliable cutting process parameters for different cutting materials is critical to the effect of multi-wire cutting (high flatness and low surface damage layer).
Chinese patent application CN105690585a discloses a multi-wire cutting process of gallium lanthanum tantalate crystal, comprising the steps of: checking cutting lines of the multi-wire cutting machine, adjusting the distance between the cutting lines, debugging the multi-wire cutting machine, and fixing the gallium lanthanum tantalate crystal on a workbench of the multi-wire cutting machine; cutting gallium lanthanum tantalate crystal by adopting a multi-wire cutting machine, lowering the workbench to a position 1-2mm above the plane of the diamond wire mesh, and sequentially starting a cutting liquid pump, swinging and the workbench to cut to obtain gallium lanthanum tantalate crystal; and heating the cut gallium lanthanum tantalate wafer crude product in alkali liquor to separate the gallium lanthanum tantalate wafer crude product from glue, ultrasonically cleaning and drying to obtain the gallium lanthanum tantalate wafer. Chinese patent application CN 105273823A discloses a water-soluble cutting fluid for cutting multi-line silicon wafers and a preparation method thereof, wherein the water-soluble cutting fluid for cutting multi-line silicon wafers comprises the following raw material components in percentage by weight: 30-40% of penetrating agent, 7-15% of surfactant, 10-15% of lubricant, 20-30% of dispersing agent and the balance of water. The cutting fluid not only has good wettability and chip removal capability, but also can meet the quality requirement and technical standard of the cutting fluid in the whole cutting process, and ensures outstanding lubricity and cooling performance.
Although the prior art carries out specific research and design on the multi-wire cutting process of the gallium lanthanum tantalate crystal and the cutting fluid for multi-wire silicon wafer cutting, no technology for the multi-wire cutting mortar and the cutting process of the tellurium zinc cadmium single crystal is disclosed at present.
Disclosure of Invention
Aiming at the defects and shortcomings existing in the prior art, the primary purpose of the invention is to provide tellurium-zinc-cadmium single crystal multi-wire cutting mortar.
The invention also aims to provide a process for performing multi-wire cutting on tellurium-zinc-cadmium single crystals by adopting the mortar. The tellurium-zinc-cadmium cutting sheet with high flatness and low surface damage layer can be obtained by adopting the multi-wire cutting mortar of the invention and matching with specific cutting process parameters. Has the advantages of low cost, high cutting speed and the like.
The invention aims at realizing the following technical scheme:
the tellurium-zinc-cadmium single crystal multi-wire cutting mortar consists of silicon carbide powder and cutting fluid, wherein the cutting fluid comprises the following components in percentage by weight: 30-90% of polyethylene glycol, 5-10% of alkaline substances, 1-5% of penetrating agents, 0.5-5% of active agents, 0.5-5% of chelating agents, 0-55% of deionized water, 0.01-0.1% of catalysts and 0.5-2% of oxidizing agents.
Further, the polyethylene glycol is polyethylene glycol 200-6000.
Further, the alkaline substance is sodium hydroxide, potassium hydroxide, etc. The basic substance acts in the present invention to react with the oxide to accelerate the cleavage rate.
Further, the penetrating agent is an alkali-resistant penetrating agent. Such as AEP98 or alkali-resistant penetrants commonly available in the market. The alkali-resistant penetrant has the function of increasing the penetrating capacity under the alkaline condition and enhancing the stability of the oxide.
Further, the active agent is sodium dodecyl benzene sulfonate. The active agent is used in the present invention to alter the interface property and speed up slicing.
Further, the chelating agent is sodium citrate, sodium lactate, sodium salicylate, etc. The chelating agent has the effect of increasing the solubility of ions in the present invention.
Further, the catalyst is platinum, ferrous sulfate, ferrous chloride, nickel oxide, palladium acetate and the like. The role of the catalyst in the present invention is to promote the chemical reaction rate.
Further, the oxidant is hydrogen peroxide, sodium hypochlorite and the like. The oxidant has the function of cadmium zinc telluride to accelerate the cutting rate.
Further, the mass volume ratio of the silicon carbide powder to the cutting fluid is 5-10Kg of silicon carbide powder: 4-10L of cutting fluid.
A process for performing multi-wire cutting on tellurium-zinc-cadmium single crystals by adopting the mortar comprises the following steps:
(1) Preparing cutting fluid according to the weight ratio of 30% -90% of polyethylene glycol, 5% -10% of alkaline substances, 1% -5% of penetrating agents, 0.5% -5% of active agents, 0.5% -5% of chelating agents, 0-55% of deionized water, 0.01% -0.1% of catalysts and 0.5% -2% of oxidizing agents, then adding silicon carbide powder, stirring and uniformly mixing to obtain mortar;
(2) Placing the oriented and bonded tellurium-zinc-cadmium crystal bars on a multi-wire cutting machine table, wherein the working mode of the cutting table is from bottom to top;
(3) Multi-wire cutting: cutting line diameter is 0.01-0.1mm, mortar temperature is 15-30 ℃, line incoming speed is 20-80m/min, cutting thickness is 600-1500 mu m, tension of cutting line is 10-25N, cutting environment is 15-25 ℃;
(4) And (3) washing the cutting slurry with water, and performing glue removing, cleaning and drying on the cut wafer to obtain the tellurium-zinc-cadmium wafer.
The process flow diagram of the multi-wire cutting process is shown in fig. 1.
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention adopts a chemical mechanical multi-wire cutting mode to replace the traditional inner circle cutting mode of tellurium-zinc-cadmium single crystals, can improve the number of wafers discharged from a crystal bar in unit length, and obtains better surface quality of cut wafers.
(2) The invention designs specific cutting mortar and cutting process parameters aiming at a tellurium-zinc-cadmium single crystal multi-wire cutting mode, can obtain the tellurium-zinc-cadmium cutting sheet with high flatness and low surface damage layer, can obviously shorten the slicing time and improves the slicing efficiency.
Drawings
Fig. 1 is a process flow diagram of the multi-wire cutting process of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Example 1
The multi-wire cutting process of the tellurium-zinc-cadmium monocrystal comprises the following steps of:
(1) The cutting fluid is prepared from 2000 49% of polyethylene glycol, 5% of sodium hydroxide, 98% of alkali-resistant penetrating agent AEP, 3% of sodium dodecyl benzene sulfonate, 2% of sodium citrate, 37.93% of deionized water, 0.07% of palladium acetate and 1% of hydrogen peroxide by weight, and then 5Kg of silicon carbide powder is prepared: and adding silicon carbide powder into the 6L cutting fluid in proportion, and uniformly stirring and mixing to obtain the mortar.
(2) And placing the oriented and bonded tellurium-zinc-cadmium crystal bars on a multi-wire cutting machine table, wherein the working mode of the cutting table is from bottom to top.
(3) Multi-wire cutting: cutting line diameter 0.05mm, mortar temperature 20-23 ℃, line feeding speed 40m/min, cutting thickness 1000 μm, cutting line tension 20N, cutting environment 20 ℃.
(4) And (3) washing the cutting slurry with water, and performing glue removing, cleaning and drying on the cut wafer to obtain the tellurium-zinc-cadmium wafer.
Example 2
The multi-wire cutting process of the tellurium-zinc-cadmium monocrystal comprises the following steps of:
(1) The cutting fluid is prepared from polyethylene glycol 6000 30%, sodium hydroxide 8%, alkali-resistant penetrating agent AEP 98% 5%, sodium dodecyl benzene sulfonate 5%, sodium citrate 5%, deionized water 46.9%, palladium acetate 0.1% and hydrogen peroxide 1% by weight, and then 5Kg of silicon carbide powder is prepared: adding silicon carbide powder into 10L of cutting fluid in proportion, stirring and mixing uniformly to obtain mortar.
(2) And placing the oriented and bonded tellurium-zinc-cadmium crystal bars on a multi-wire cutting machine table, wherein the working mode of the cutting table is from bottom to top.
(3) Multi-wire cutting: cutting line diameter 0.01mm, mortar temperature 20-23 ℃, line feeding speed 80m/min, cutting thickness 600 μm, cutting line tension 10N, cutting environment 20 ℃.
(4) And (3) washing the cutting slurry with water, and performing glue removing, cleaning and drying on the cut wafer to obtain the tellurium-zinc-cadmium wafer.
Example 3
The multi-wire cutting process of the tellurium-zinc-cadmium monocrystal comprises the following steps of:
(1) The cutting fluid is prepared from 200% of polyethylene glycol, 5% of potassium hydroxide, 98% of alkali-resistant penetrating agent AEP, 0.5% of sodium dodecyl benzene sulfonate, 0.5% of sodium citrate, 2.99% of deionized water, 0.01% of platinum and 1% of hydrogen peroxide by weight ratio, and then 10Kg of silicon carbide powder is prepared: and adding silicon carbide powder into the 4L cutting fluid in proportion, and uniformly stirring and mixing to obtain the mortar.
(2) And placing the oriented and bonded tellurium-zinc-cadmium crystal bars on a multi-wire cutting machine table, wherein the working mode of the cutting table is from bottom to top.
(3) Multi-wire cutting: cutting line diameter 0.1mm, mortar temperature 20-23 ℃, line feeding speed 20m/min, cutting thickness 1500 μm, cutting line tension 25N, cutting environment 25 ℃.
(4) And (3) washing the cutting slurry with water, and performing glue removing, cleaning and drying on the cut wafer to obtain the tellurium-zinc-cadmium wafer.
Performance effect test:
statistical tests were performed on the number of pieces of the ingot (300 mm) per unit length, the thickness of the damaged layer, the slicing time and the surface quality of the sliced pieces (mainly visual inspection, whether saw lines exist on the surface) in the cutting process of the above example, and the results are shown in the following table 1:
TABLE 1
| Number of discharged tablets | Thickness of damaged layer (mum) | Time of slicing | Slice mass | |
| Example 1 | 243 pieces | 80-100 | 17h | No saw lines |
| Example 2 | 243 pieces | 80-100 | 18h | No saw lines |
| Example 3 | 243 pieces | 80-100 | 19h | No saw lines |
| Traditional internal circular cutting | 180 pieces | 130-200 | 90h | With saw lines |
From the results, the invention adopts a chemical mechanical multi-wire cutting mode to replace the traditional inner circle cutting mode of tellurium-zinc-cadmium single crystals, so that the number of wafers produced by a crystal bar in unit length can be increased, the slicing time can be reduced, and better surface quality of the cut wafers can be obtained.
Comparative example
To verify the synergistic effect of the cutting mortar in the multi-line cutting of tellurium-zinc-cadmium single crystals. The mortars lacking a single functional component were set as in table 2 below, and cut tests were performed according to the same process as in example 1, and the number of pieces, the thickness of the cut damaged layer, the slicing time, and the surface quality of the cut pieces were counted, and the results are shown in table 2.
TABLE 2
| Component/content | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 |
| Polyethylene glycol | 49％ | 49％ | 49％ | 49％ | 49％ | 49％ |
| Sodium hydroxide | 0 | 5％ | 5％ | 5％ | 5％ | 5％ |
| AEP98 | 2％ | 0 | 2％ | 2％ | 2％ | 2％ |
| Sodium dodecyl benzene sulfonate | 3％ | 3％ | 0 | 3％ | 3％ | 3％ |
| Sodium citrate | 2％ | 2％ | 2％ | 0 | 2％ | 2％ |
| Deionized water | 42.93％ | 39.93％ | 40.93％ | 39.93％ | 38％ | 38.93％ |
| Palladium acetate | 0.07％ | 0.07％ | 0.07％ | 0.07％ | 0 | 0.07％ |
| Hydrogen peroxide | 1％ | 1％ | 1％ | 1％ | 1％ | 0 |
TABLE 3 Table 3
| Slice performance | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 |
| Number of discharged tablets | 243 pieces | 243 pieces | 243 pieces | 243 pieces | 243 pieces | 243 pieces |
| Thickness of damaged layer (mum) | 80-100 | 80-100 | 80-100 | 80-100 | 80-100 | 80-100 |
| Time of slicing | 24h | 23h | 23h | 23h | 23h | 24h |
| Slice mass | No saw lines | No saw lines | No saw lines | No saw lines | No saw lines | No saw lines |
From the comparison results of the comparative examples 1 to 6 and example 1, it can be seen that the invention has good synergistic effect on the functional components of the cutting mortar developed by the tellurium-zinc-cadmium single crystal multi-wire cutting process. The absence of any one of alkaline material, penetrant, active agent, chelating agent, catalyst and oxidant therein results in an increase in slicing time.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (2)
1. The tellurium-zinc-cadmium single crystal multi-wire cutting mortar is characterized by comprising silicon carbide powder and cutting fluid, wherein the cutting fluid comprises the following components in parts by weight: 30% -90% of polyethylene glycol, 5% -10% of alkaline substances, 1% -5% of penetrating agents, 0.5% -5% of active agents, 0.5% -5% of chelating agents, 0-55% of deionized water, 0.01% -0.1% of catalysts and 0.5% -2% of oxidizing agents;
the polyethylene glycol is polyethylene glycol 200-6000; the alkaline substance is at least one of sodium hydroxide and potassium hydroxide; the penetrating agent is alkali-resistant penetrating agent; the active agent is sodium dodecyl benzene sulfonate; the chelating agent is at least one of sodium citrate, sodium lactate and sodium salicylate; the catalyst is at least one of platinum, ferrous sulfate, ferrous chloride, nickel oxide and palladium acetate; the oxidant is sodium hypochlorite or hydrogen peroxide;
the mass volume ratio of the silicon carbide powder to the cutting fluid is 5-10Kg of silicon carbide powder: 4-10L of cutting fluid.
2. A process for multi-wire sawing of cadmium zinc telluride single crystals using the mortar of claim 1, comprising the steps of:
(1) Preparing cutting fluid according to the weight ratio of 30% -90% of polyethylene glycol, 5% -10% of alkaline substances, 1% -5% of penetrating agents, 0.5% -5% of active agents, 0.5% -5% of chelating agents, 0-55% of deionized water, 0.01% -0.1% of catalysts and 0.5% -2% of oxidizing agents, then adding silicon carbide powder, stirring and uniformly mixing to obtain mortar;
(2) Placing the oriented and bonded tellurium-zinc-cadmium crystal bars on a multi-wire cutting machine table, wherein the working mode of the cutting table is from bottom to top;
(3) Multi-wire cutting: cutting line diameter is 0.01-0.1mm, mortar temperature is 15-30 ℃, line incoming speed is 20-80m/min, cutting thickness is 600-1500 mu m, tension of cutting line is 10-25N, cutting environment is 15-25 ℃;
(4) And (3) washing the cutting slurry with water, and performing glue removing, cleaning and drying on the cut wafer to obtain the tellurium-zinc-cadmium wafer.
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