CN114161300A - Polishing method of strip-shaped wafer - Google Patents

Polishing method of strip-shaped wafer Download PDF

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Publication number
CN114161300A
CN114161300A CN202111396805.9A CN202111396805A CN114161300A CN 114161300 A CN114161300 A CN 114161300A CN 202111396805 A CN202111396805 A CN 202111396805A CN 114161300 A CN114161300 A CN 114161300A
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Prior art keywords
strip
polishing
wafer
shaped wafer
shaped
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CN114161300B (en
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廖彬
周铁军
曾琦
张昌文
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Guangdong Vital Micro Electronics Technology Co Ltd
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Guangdong Vital Micro Electronics Technology Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/16—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces performing a reciprocating movement, e.g. during which the sense of rotation of the working-spindle is reversed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses a polishing method of a strip-shaped wafer, which ensures the polishing quality of the strip-shaped wafer and adopts the technical scheme that: a polishing method of a strip-shaped wafer, comprising the steps of: step 1: applying pressure to the strip-shaped wafer to enable the surface to be polished of the strip-shaped wafer to be attached to the polishing platform; step 2: the polishing platform is filled with polishing solution, the strip-shaped wafer and the polishing platform make linear reciprocating relative motion to enable the strip-shaped wafer to slide through the polishing solution, and the polishing platform belongs to the technical field of wafer polishing.

Description

Polishing method of strip-shaped wafer
Technical Field
The invention belongs to the technical field of wafer polishing, and particularly relates to a polishing method of a strip-shaped wafer.
Background
Wafer polishing, which is one of the ring processes of wafer processing;
polishing method such as a polishing method of a wafer disclosed in patent publication No. CN101069958A, mainly comprising the steps of: (1) placing a wafer to be processed on a planet wheel of a polishing machine; (2) starting the polishing machine, and setting process parameters according to the wafer to be processed after the polishing machine is normally self-checked; (3) controlling a cylinder connected with the upper polishing disk to descend, receiving a signal of a position sensor, stopping the cylinder when the upper polishing disk reaches a working position, and connecting the upper polishing disk with the long shaft; (4) after detecting that the polishing solution conveying device is normal, opening the polishing solution; (5) controlling the cylinder to continuously descend, detecting the pressure between the cylinder and the upper polishing disc through a pressure sensor, and starting each variable frequency motor when the pressure of the pressure sensor reaches a preset pressure; (6) and controlling the variable frequency motor according to the rotating speed control curve, and controlling the cylinder according to the pressure control curve to polish the wafer.
In the above solution, the wafer to be polished is circular, and during polishing, both the wafer and the polishing pad rotate.
Wherein, the shape of the wafer when polished is not necessarily the same as the shape when actually used, such as a lithium niobate wafer, which is generally strip-shaped when actually used, and which is circular when polished;
the processing process of the lithium niobate wafer comprises the following steps of; the circular wafer is polished first and then cut into strips after polishing.
The above-mentioned processing procedure has the following disadvantages: the wafer is cut into strips after polishing, which may damage the polished surface of the wafer, damage the wafer, and affect the production quality of the wafer.
In order to ensure the production quality of the wafer, the wafer can be cut into strips firstly, and then the strip-shaped wafer is polished;
in the prior art, circular wafers are polished in a rotating mode, and strip wafers are polished temporarily;
for the polishing of bar wafer, if polish through above-mentioned mode with the rotation as the basis, at the in-process of rotatory polishing, because the restriction of shape, the rotation of bar wafer can form scrapes the liquid structure, and the rotation of polishing pad can produce centrifugal force simultaneously, so both superposes and can scrape most polishing solution away for the polishing solution is difficult to get into the center of wafer, thereby influences the polishing quality of bar wafer.
Disclosure of Invention
The invention mainly aims to provide a polishing method of a strip-shaped wafer, aiming at ensuring the polishing quality of the strip-shaped wafer.
According to a first aspect of the present invention, there is provided a polishing method of a strip-shaped wafer, comprising the steps of:
step 1: applying pressure to the strip-shaped wafer to enable the surface to be polished of the strip-shaped wafer to be attached to the polishing platform;
step 2: and injecting polishing liquid into the polishing platform, and enabling the strip-shaped wafer and the polishing platform to do linear reciprocating relative motion so that the strip-shaped wafer slides through the polishing liquid.
In a specific embodiment of the present invention, the parameters during polishing of the strip wafer are: the pressure applied in the step 1 is 400-500N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 60-80 times/min, and the time is 15-30 min.
In a specific embodiment of the invention, the pressure applied in step 1 is 400N; in step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 80 times/min, and the time is 15 min.
In a specific embodiment of the invention, the polishing liquid is filled into the polishing platform through the polishing liquid pipe; the slurry tube is disposed adjacent to a side edge of the bar-shaped wafer and moves in synchronization with the bar-shaped wafer.
In one specific embodiment of the present invention, the number of the slurry tubes is 2, which are respectively disposed adjacent to 2 longer sides of the strip-shaped wafer;
the 2 polishing liquid tubes form a group, and a strip-shaped wafer is matched with the group of polishing liquid tubes.
In a particular embodiment of the invention, the longer side of the strip-shaped wafer is parallel to the direction of movement.
In a particular embodiment of the invention, the strip-shaped wafer is clamped by means of a clamp.
In a specific embodiment of the present invention, a plurality of bar-shaped wafers are arranged on a ceramic disk, and a jig clamps the ceramic disk;
the ceramic disc is provided with a through hole for the polishing liquid pipe to pass through.
In a particular embodiment of the invention, the ceramic disk is provided with grooves for accommodating the strip-shaped wafers, one strip-shaped wafer being arranged in one of the grooves and the surface to be polished of the strip-shaped wafer extending outside the groove.
In a particular embodiment of the invention, the pressure is applied to the bar wafer by a clamp; the jig makes a linear reciprocating motion relative to the polishing platen.
One of the above technical solutions of the present invention has at least one of the following advantages or beneficial effects:
the strip-shaped wafer is polished in a manner that the strip-shaped wafer and the polishing platform do linear reciprocating relative motion and the strip-shaped wafer slides through the polishing solution; in the polishing process, bar wafer, polishing platform all can not rotate, then the bar wafer can not form rotatory liquid structure of scraping, and polishing platform can not produce centrifugal force, so can not scrape away the polishing solution in a large number to make the polishing solution enter into the center of bar wafer more easily, thereby guarantee the polishing quality of bar wafer.
Drawings
The invention is further described below with reference to the accompanying drawings and examples;
FIG. 1 is a flowchart of a polishing method of example 1 of the present invention;
FIG. 2 is a structural view of embodiment 1 of the present invention;
fig. 3 is an enlarged view of D in fig. 2 of embodiment 1 of the present invention;
fig. 4 is a structural view of a ceramic disk of example 1 of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The following disclosure provides many different embodiments, or examples, for implementing different aspects of the invention.
Example 1
Referring to fig. 1 to 4, a polishing method of a bar-shaped wafer includes the steps of:
step 1: applying pressure to the strip-shaped wafer A to enable the surface to be polished of the strip-shaped wafer A to be attached to the polishing platform 1;
step 2: injecting polishing solution into the polishing platform 1, and enabling the strip-shaped wafer A and the polishing platform 1 to do linear reciprocating relative motion to enable the strip-shaped wafer A to slide through the polishing solution; one axis of the surface to be polished of the strip-shaped wafer A is perpendicular to the moving direction.
A bar-shaped wafer a such as a lithium niobate wafer, gallium arsenide, gallium nitride, silicon carbide, or the like;
the polishing solution is: a silica sol solution having a main component of silica;
in practical application, the strip-shaped wafer A is polished in a manner that the strip-shaped wafer A and the polishing platform 1 do linear reciprocating relative motion and the strip-shaped wafer A slides through polishing solution; in the polishing process, bar wafer A, polishing platform 1 all can not rotate, then bar wafer A can not form rotatory liquid structure of scraping, and polishing platform 1 can not produce centrifugal force, so can not scrape away the polishing solution in a large number to make the polishing solution enter into bar wafer A's center more easily, thereby guarantee bar wafer A's polishing quality.
As a specific implementation of this embodiment, the polishing liquid is filled into the polishing platform 1 through the polishing liquid pipe 2; the polishing liquid pipe 2 is arranged close to the side edge of the strip-shaped wafer A and moves synchronously with the strip-shaped wafer A, so that the distance between the polishing liquid pipe 2 and the strip-shaped wafer A is shortened, and the polishing liquid can be fully contacted with the surface to be polished of the strip-shaped wafer A;
the number of the polishing liquid tubes 2 arranged adjacent to the same side edge of the strip-shaped wafer a may be 1, 2 or more, and this embodiment does not limit this;
specifically, the slurry pipe 2 may be disposed adjacent to the shorter side of the bar-shaped wafer a, and may also be disposed adjacent to the longer side of the bar-shaped wafer a;
the slurry tubes 2 may be 1 disposed adjacent to 1 shorter side of the strip-shaped wafer a or 2 disposed adjacent to 2 shorter sides of the strip-shaped wafer a, respectively;
it may also be 1 arranged adjacent to 1 longer side of the strip-shaped wafer a or 2 arranged adjacent to 2 longer sides of the strip-shaped wafer a, respectively;
there may also be 2 arranged adjacent to 1 shorter side, 1 longer side, respectively, of the strip-shaped wafer a;
the number of the strip-shaped wafers A can be 4 which are respectively arranged adjacent to all the side edges of the strip-shaped wafers A, and the embodiment does not limit the number;
however, if the number of the slurry tubes 2 is 1 or 2 arranged adjacent to the shorter side of the strip-shaped wafer a, it would be disadvantageous for the slurry to enter the center of the surface to be polished of the strip-shaped wafer a because the slurry tubes 2 are located relatively far from the center of the strip-shaped wafer a;
therefore, as a preference of the present embodiment, the number of the slurry tubes 2 is 2, which are respectively arranged adjacent to 2 longer sides of the strip-shaped wafer a; the distance between the polishing liquid pipe 2 and the center of the strip-shaped wafer A is shortened, so that the polishing liquid can enter the center of the strip-shaped wafer A more easily, and the polishing effect of the strip-shaped wafer A is better.
In this embodiment, 2 slurry tubes 2 are provided in one group, and one strip wafer a is fitted with one group of slurry tubes 2.
The polishing platform 1 comprises a platform body, and a polishing pad for polishing the strip-shaped wafer A is arranged on the platform body; generally, the polishing pad is made of polyurethane, has mechanical properties like a sponge and porous water absorption properties, and has a surface including a certain density of micro-protrusions and a plurality of micro-pores, which can absorb the polishing liquid output from the polishing liquid pipe 2 to facilitate the polishing liquid to enter the center of the wafer to be polished.
Preferably, the longer side of the strip-shaped wafer a is parallel to the direction of movement;
when the strip-shaped wafer A is polished, the shorter side of the strip-shaped wafer A is perpendicular to the moving direction, the polishing liquid pipes 2 are adjacent to the two longer sides of the strip-shaped wafer A to output polishing liquid, so that the polishing pad positioned between the 2 polishing liquid pipes 2 can fully absorb the polishing liquid, the shorter side of the strip-shaped wafer A is shorter in length, the liquid scraping range is small, the surface to be polished of the strip-shaped wafer A can fully contact with the polishing liquid when the strip-shaped wafer A is polished, and the polishing quality of the strip-shaped wafer A is ensured;
this embodiment does not exclude that the strip-shaped wafer a is polished in such a manner that the shorter side is parallel to the moving direction, nor that the strip-shaped wafer a is polished in such a manner that the longer side intersects with the moving direction; the strip-shaped wafer a is polished in such a manner that the longer side is parallel to the moving direction, which is only preferable in the present embodiment, and the polishing effect is superior to both of the above-described manners.
In practical application, the strip-shaped wafer A is clamped by the clamp 3, and one strip-shaped wafer A is clamped at a time, namely, the polishing work of only one strip-shaped wafer A can be completed;
if polishing work of a plurality of strip-shaped wafers A is realized by one-time clamping, a plurality of clamps 3 are needed, and the operation is complex, so that the strip-shaped wafers A are preferably arranged on a ceramic disc 4, and the clamps 3 clamp the ceramic disc 4;
the ceramic disc 4 is provided with through holes B for the polishing liquid pipes 2 to pass through, then 2 corresponding through holes B on the ceramic disc 4 are used for a group of polishing liquid pipes 2 to pass through, and the strip-shaped wafer A is arranged among the 2 corresponding through holes B.
In practical applications, the strip-shaped wafer a is fixed on the ceramic disc 4 in a detachable manner, typically by hot melting wax, by the following process: heating the ceramic disc 4, dripping hot melting wax on the ceramic disc 4 to melt the hot melting wax, putting the strip-shaped wafer A on the hot melting wax, pressurizing the strip-shaped wafer A for a period of time, and solidifying the hot melting wax after the ceramic disc 4 is cooled, so that the strip-shaped wafer A is fixed; when it is desired to remove the strip-shaped wafer a, it is only necessary to heat the ceramic disk 4 so that the solidified hot-melt wax melts.
The strip-shaped wafer A is fixed in the above way, in the process of pressurizing the strip-shaped wafer A, the strip-shaped wafer A can have a displacement phenomenon, the orientation of the displaced strip-shaped wafer A is inconsistent with that of other strip-shaped wafers A, and the polishing quality of a plurality of strip-shaped wafers A can be different under the same polishing time, so that the polishing quality is influenced, therefore, as the optimization of the embodiment, the ceramic disc 4 is provided with the grooves C for accommodating the strip-shaped wafers A, one strip-shaped wafer A is arranged in one groove C, and the surface to be polished of one strip-shaped wafer A extends out of the groove C;
the size of the groove C is matched with that of the strip-shaped wafer A, and the strip-shaped wafer A cannot deviate in position when being fixed, so that the polishing quality of the strip-shaped wafer A is guaranteed.
In this embodiment, the polishing platen 1 may apply a pressure to the bar-shaped wafer a and perform a linear reciprocating motion with respect to the jig 3, or the polishing platen 1 and the bar-shaped wafer a may perform a linear reciprocating motion in opposite directions together; the clamp 3 may apply pressure to the bar-shaped wafer a and perform linear reciprocating motion with respect to the polishing platen 1, which is not limited in this embodiment;
as a specific implementation of the present embodiment, the jig 3 applies pressure to the bar-shaped wafer a; the clamp 3 makes a linear reciprocating motion relative to the polishing platform 1;
specifically, a clamp 3 is arranged above the polishing platform 1, and the clamp 3 is driven to lift by a first driving device 5 so as to apply pressure to the strip-shaped wafer A; the clamp 3 is driven by a second driving device 6 to do linear reciprocating motion so as to realize the polishing work of the strip-shaped wafer A;
the first driving device 5 can be an air cylinder, an electric cylinder or a hydraulic cylinder; the second driving device 6 may be an electric sliding table, an air cylinder, a hydraulic cylinder, etc., which is not limited in this embodiment; as a specific implementation of this embodiment, the first driving device 5 is an air cylinder, and the second driving device 6 is an electric sliding table.
The specific implementation manner of the fixture 3 is a clamping jaw, a clamping plate, a clamping block, etc. which can be moved close to and away from each other, and this embodiment does not limit this.
Example 2
The same as example 1, except that:
length, width, height of the bar-shaped wafer: 30mm by 5mm by 0.04 mm; the longer side of the strip wafer is parallel to the direction of motion;
parameters during polishing of the strip wafer were: the pressure applied in step 1 is 400N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 60 times/min, and the time is 15 min;
in practical application, the qualified range of the polishing effect of the strip-shaped wafer is as follows: 0.2< Ra <0.5nm, TTV < 10.
The polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000061
example 3
The same as example 2, except that the parameters in polishing the strip wafer were: the pressure applied in step 1 is 400N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 70 times/min, and the time is 18 min;
the polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000062
example 4
The same as example 2 except that the pressure applied in step 1 was 400N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 80 times/min, and the time is 15 min;
the polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000063
example 5
The same as example 2, except that the parameters in polishing the strip wafer were: the pressure applied in step 1 is 400N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 90 times/min, and the time is 13 min;
the polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000064
example 6
The same as example 2, except that:
parameters during polishing of the strip wafer were: the pressure applied in step 1 is 400N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 80 times/min, and the time is 30 min;
the polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000071
example 7
The same as example 2, except that:
parameters during polishing of the strip wafer were: the pressure applied in the step 1 is 500N; in step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 60 times/min, and the time is 15 min.
The polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000072
example 8
The same as example 2, except that:
parameters during polishing of the strip wafer were: the pressure applied in the step 1 is 500N; in step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer and the polishing platform is 80 times/min, and the time is 30 min.
The polishing effect is shown in the following table, wherein Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000073
comparative example 1
Length, width, height of the bar-shaped wafer: 30mm by 5mm by 0.04 mm;
the parameters for processing the bar-shaped wafer by rotation are shown in the following table, where Ra represents the surface roughness; TTV represents the total thickness variation of the wafer;
Figure BDA0003370193690000081
in summary, by performing the polishing process on the strip wafer by using the method of embodiment 1 and the processing parameters shown in embodiment 2, embodiment 3, embodiment 4, embodiment 5, embodiment 6, embodiment 7, or embodiment 8, the polishing effect produced by the polishing process is the best as that of embodiment 4, wherein all the polishing effects are better than that of comparative example 1;
the polishing effect produced by comparative example 1 was much inferior to that produced by example 4, and in general, polishing of a strip-shaped wafer by linear reciprocating polishing was superior to that by rotary polishing.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A method of polishing a strip wafer, comprising the steps of:
step 1: applying pressure to the strip-shaped wafer (A) to enable the surface to be polished of the strip-shaped wafer (A) to be attached to the polishing platform (1);
step 2: and (3) filling polishing solution into the polishing platform (1), and enabling the strip-shaped wafer (A) and the polishing platform (1) to do linear reciprocating relative motion to enable the strip-shaped wafer (A) to slide through the polishing solution.
2. The polishing method of a bar wafer according to claim 1, wherein the parameters at the time of polishing the bar wafer (a) are: the pressure applied in the step 1 is 400-500N; in the step 2, the frequency of the linear reciprocating relative motion of the strip-shaped wafer (A) and the polishing platform (1) is 60-80 times/min, and the time is 15-30 min.
3. The method for polishing a bar-shaped wafer according to claim 2, wherein the pressure applied in step 1 is 400N; in the step 2, the frequency of the linear reciprocating relative motion between the strip-shaped wafer (A) and the polishing platform (1) is 80 times/min, and the time is 15 min.
4. The polishing method of a strip wafer as claimed in claim 1, characterized in that the polishing platform (1) is filled with a polishing liquid through the polishing liquid pipe (2); the slurry pipe (2) is disposed adjacent to the side of the bar-shaped wafer (A) and moves in synchronization with the bar-shaped wafer (A).
5. The polishing method of a bar-shaped wafer according to claim 4, characterized in that the number of the polishing liquid tubes (2) is 2, which are respectively arranged adjacent to 2 longer sides of the bar-shaped wafer (A);
the 2 polishing liquid pipes (2) form a group, and a strip-shaped wafer (A) is matched with the group of polishing liquid pipes (2).
6. Strip wafer polishing method according to claim 5, characterized in that the longer side of the strip wafer (A) is parallel to the direction of movement.
7. Strip wafer polishing method according to claim 6, characterized in that the strip wafer (A) is clamped by a clamp (3).
8. The polishing method of strip wafers as claimed in claim 7, wherein a plurality of strip wafers (A) are set on a ceramic disk (4), and the ceramic disk (4) is clamped by the clamp (3);
the ceramic disc (4) is provided with a through hole (B) for the polishing liquid pipe (2) to pass through.
9. Strip wafer polishing method according to claim 8, characterized in that the ceramic disk (4) is provided with grooves (C) for accommodating strip wafers (A), one strip wafer (A) being disposed in one groove (C) and its surface to be polished extending outside the groove (C).
10. The polishing method of a strip wafer according to claim 7, characterized in that the pressure is applied to the strip wafer (A) by a jig (3); the clamp (3) makes a linear reciprocating motion relative to the polishing platform (1).
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1708565A (en) * 2002-10-31 2005-12-14 昭和电工株式会社 Composition for polishing metal, polishing method for metal layer, and production method for wafer
CN202053163U (en) * 2011-03-03 2011-11-30 中芯国际集成电路制造(上海)有限公司 Grinding head
CN107756232A (en) * 2017-11-10 2018-03-06 北京鼎泰芯源科技发展有限公司 A kind of wafer polishing apparatus
CN108406476A (en) * 2017-02-10 2018-08-17 枣庄维信诺电子科技有限公司 A kind of burnishing device of substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1708565A (en) * 2002-10-31 2005-12-14 昭和电工株式会社 Composition for polishing metal, polishing method for metal layer, and production method for wafer
CN202053163U (en) * 2011-03-03 2011-11-30 中芯国际集成电路制造(上海)有限公司 Grinding head
CN108406476A (en) * 2017-02-10 2018-08-17 枣庄维信诺电子科技有限公司 A kind of burnishing device of substrate
CN107756232A (en) * 2017-11-10 2018-03-06 北京鼎泰芯源科技发展有限公司 A kind of wafer polishing apparatus

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