CN114156368A - Preparation method of electrode of photovoltaic cell - Google Patents
Preparation method of electrode of photovoltaic cell Download PDFInfo
- Publication number
- CN114156368A CN114156368A CN202111430455.3A CN202111430455A CN114156368A CN 114156368 A CN114156368 A CN 114156368A CN 202111430455 A CN202111430455 A CN 202111430455A CN 114156368 A CN114156368 A CN 114156368A
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- Prior art keywords
- electrode
- photovoltaic cell
- ink
- preparation
- temperature
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000002243 precursor Substances 0.000 claims abstract description 10
- 238000007641 inkjet printing Methods 0.000 claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 239000011733 molybdenum Substances 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000009766 low-temperature sintering Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 6
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- YPIFGDQKSSMYHQ-UHFFFAOYSA-N 7,7-dimethyloctanoic acid Chemical compound CC(C)(C)CCCCCC(O)=O YPIFGDQKSSMYHQ-UHFFFAOYSA-N 0.000 claims description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000001384 succinic acid Substances 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- 150000004718 beta keto acids Chemical class 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 11
- 238000007650 screen-printing Methods 0.000 abstract description 6
- 238000007639 printing Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 abstract description 2
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/0023—Digital printing methods characterised by the inks used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/0041—Digital printing on surfaces other than ordinary paper
- B41M5/0047—Digital printing on surfaces other than ordinary paper by ink-jet printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a preparation method of an electrode of a photovoltaic cell, which comprises the steps of carrying out ink-jet printing by adopting conductive ink containing an organic X precursor and no silver, and printing an ink layer forming an electrode pattern on a silicon wafer; the ink layer is sintered at low temperature to form a metal X conducting layer; the metal X conducting layer is sintered at high temperature to form a metal silicification X layer, so that metallization connection is formed, and the preparation of the photovoltaic cell electrode is completed; and X is selected from one of nickel, cobalt, titanium and molybdenum. The preparation method of the electrode of the photovoltaic cell does not adopt silver-containing materials and a screen printing technology, but adopts the conductive ink containing nickel, cobalt, titanium or molybdenum and an ink-jet printing technology, so that the preparation efficiency of the electrode can be improved, the silver consumption in the preparation process of the photovoltaic cell is reduced, and the production cost is reduced.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a preparation method of an electrode of a photovoltaic cell.
Background
The electrodes of the existing photovoltaic cells are generally formed by screen printing silver paste and sintering.
In order to reduce the silver consumption in the preparation process of the photovoltaic cell, the silver paste needs to be avoided as much as possible.
In addition, a screen plate is required to be used for screen printing, but the printing pattern of the screen plate is fixed, so that different screen plates are required to be used for printing different electrode patterns, a plurality of screen plates are required to be matched, and the cost is increased. Moreover, the screen printing plate is easy to damage after being used for many times, and the printing precision of the grid line electrode can be influenced, so that the quality of the finally prepared photovoltaic cell is influenced.
It is therefore desirable to develop a method for preparing electrodes for photovoltaic cells that does not employ silver-containing materials and screen printing techniques.
Disclosure of Invention
The invention aims to provide a preparation method of an electrode of a photovoltaic cell, which adopts conductive ink containing an organic X precursor and no silver to carry out ink-jet printing, and prints an ink layer forming an electrode pattern on a silicon wafer; the ink layer is sintered at low temperature to form a compact metal X conducting layer; the metal X conducting layer is in metalized connection with the silicon substrate through high-temperature sintering, and the metal X conducting layer is taken as an electrode of the photovoltaic cell; and X is selected from one of nickel, cobalt, titanium and molybdenum.
Preferably, the organic X precursor is selected from one of neodecanoic acid X, β -ketoacid X, acetic acid X, butyric acid X, citric acid X, succinic acid X, malic acid X, tartaric acid X, acetic acid X, oxalic acid X.
Preferably, the low-temperature sintering temperature is 100-200 ℃, and the time is 1-4 h.
Preferably, the high-temperature sintering is performed in two steps.
Preferably, the temperature of the first high-temperature sintering is 600-700 ℃, and the time is 30-120 s.
Preferably, the temperature of the second high-temperature sintering is 700-900 ℃, and the time is 60-100 s
Preferably, the ink layer thickness of the ink jet printing is 10nm to 100 μm.
Preferably, the photovoltaic cell is a PERC cell, a TOPCon cell, an IBC cell or an HBC cell.
The invention has the advantages and beneficial effects that: the preparation method of the electrode of the photovoltaic cell is provided, and silver-containing materials and screen printing technology are not adopted, but the conductive ink containing nickel, cobalt, titanium or molybdenum and ink-jet printing technology are adopted, so that the preparation efficiency of the electrode can be improved, the silver consumption in the preparation process of the photovoltaic cell is reduced, and the production cost is reduced.
The organic X precursor can form a layer of compact nano-particle metal X film (namely a metal X conducting layer) through low-temperature sintering; and the metal X conducting layer can form silicide with the silicon substrate through high-temperature sintering to form metallized connection, so that the welding strength is high, the contact resistance can be reduced, and the conductivity of the connection electrode is improved.
The organic X precursor can be decomposed into a nano-particle metal X film (namely a metal X conducting layer) only by low-temperature sintering, and the chemical decomposition temperature (namely the low-temperature sintering temperature) of the organic X precursor needs to be controlled; the temperature of low-temperature sintering is too low (such as lower than 100 ℃), the thickness of the formed metal X conducting layer is too thin, and the metal X conducting layer cannot penetrate into the silicon substrate during subsequent high-temperature sintering and cannot form metallized connection with the silicon substrate; the low-temperature sintering temperature is too high (such as higher than 200 ℃), and the thickness of the formed metal X conductive layer is too thick, so that the metal X conductive layer can etch the silicon substrate to too deep in the subsequent high-temperature sintering process, and the structure of the battery can be damaged.
The metal X conducting layer can penetrate into the silicon substrate only through high-temperature sintering, the metal X conducting layer is converted into a metal silicification X layer through two times of high-temperature sintering, the crystal form of the metal silicification X layer is changed, the metal silicification X layer is converted from high resistance to low resistance, and therefore the conversion efficiency of the battery can be improved.
The electrode preparation method is suitable for various photovoltaic cells, and can improve the electrode preparation efficiency and reduce the production cost.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a preparation method of an electrode of a photovoltaic cell, which comprises the steps of carrying out ink-jet printing by adopting conductive ink containing an organic X precursor and no silver, and printing an ink layer forming an electrode pattern on a silicon wafer; the ink layer is sintered at low temperature to form a compact metal X conducting layer; forming a metal silicide X layer by sintering the metal X conducting layer at high temperature to form metallization connection, wherein the metal silicide X layer is taken as an electrode of the photovoltaic cell;
specifically, the method comprises the following steps:
the organic X precursor is selected from one of neodecanoic acid X, beta-ketonic acid X, acetic acid X, butyric acid X, citric acid X, succinic acid X, malic acid X, tartaric acid X, acetic acid X and oxalic acid X;
x is selected from one of nickel, cobalt, titanium and molybdenum;
the thickness of an ink layer for ink-jet printing is 10 nm-100 mu m;
the low-temperature sintering temperature is 100-200 ℃, and the time is 1-4 h;
the high-temperature sintering is carried out by two times: the temperature of the first high-temperature sintering is 600-700 ℃, and the time is 30-120 s; the temperature of the second high-temperature sintering is 700-900 ℃, and the time is 60-100 s.
The electrode preparation method is suitable for various photovoltaic cells, including PERC cells, TOPCon cells, IBC cells and HBC cells.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. The preparation method of the electrode of the photovoltaic cell is characterized in that conductive ink containing an organic X precursor and no silver is adopted for ink-jet printing, and an ink layer forming an electrode pattern is printed on a silicon wafer; the ink layer is sintered at low temperature to form a metal X conducting layer; the metal X conducting layer is in metalized connection with the silicon substrate through high-temperature sintering, and the preparation of the photovoltaic cell electrode is completed; and X is selected from one of nickel, cobalt, titanium and molybdenum.
2. The method of claim 1, wherein the organic X precursor is selected from one of neodecanoic acid X, beta-ketoacid X, acetic acid X, butyric acid X, citric acid X, succinic acid X, malic acid X, tartaric acid X, acetic acid X, and oxalic acid X.
3. The method for preparing the electrode of the photovoltaic cell as claimed in claim 1, wherein the temperature of the low-temperature sintering is 100-200 ℃ and the time is 1-4 h.
4. The method for preparing an electrode for a photovoltaic cell according to claim 1, wherein the high-temperature sintering is performed in two steps.
5. The method for preparing an electrode of a photovoltaic cell according to claim 4, wherein the temperature of the first high-temperature sintering is 600 to 700 ℃ and the time is 30 to 120 seconds.
6. The method for preparing an electrode of a photovoltaic cell according to claim 4, wherein the temperature of the second high-temperature sintering is 700 to 900 ℃ for 60 to 100 seconds.
7. The method for preparing an electrode of a photovoltaic cell according to claim 1, wherein the ink layer thickness of the ink-jet printing is 10nm to 100 μm.
8. The method of preparing an electrode for a photovoltaic cell according to claim 1, wherein the photovoltaic cell is a PERC cell, a TOPCon cell, an IBC cell or an HBC cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111430455.3A CN114156368A (en) | 2021-11-29 | 2021-11-29 | Preparation method of electrode of photovoltaic cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111430455.3A CN114156368A (en) | 2021-11-29 | 2021-11-29 | Preparation method of electrode of photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114156368A true CN114156368A (en) | 2022-03-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111430455.3A Pending CN114156368A (en) | 2021-11-29 | 2021-11-29 | Preparation method of electrode of photovoltaic cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN114156368A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070049760A (en) * | 2005-11-09 | 2007-05-14 | 주식회사 나노신소재 | Metallic ink, and method for forming of electrode using the same and substrate |
| CN102573313A (en) * | 2012-02-13 | 2012-07-11 | 苏州晶讯科技股份有限公司 | Method for utilizing base metal catalytic ink to manufacture printed circuit |
| CN105336627A (en) * | 2015-10-21 | 2016-02-17 | 哈尔滨工业大学 | Method for preparing high temperature service nanocrystalline joint through pulse current low temperature rapid sintering |
| CN106098808A (en) * | 2016-08-10 | 2016-11-09 | 中国科学院电工研究所 | A kind of crystal silicon solar battery base metal front electrode and preparation method thereof |
| CN106549081A (en) * | 2015-09-16 | 2017-03-29 | 比亚迪股份有限公司 | A kind of method for making electrode of solar battery |
| WO2020111634A1 (en) * | 2018-11-29 | 2020-06-04 | 솔브레인 주식회사 | Method for preparing conductive ink composition for inner electrode of layered ceramic capacitor, and method for manufacturing inner electrode of layered ceramic capacitor by using same |
| CN112521802A (en) * | 2020-11-26 | 2021-03-19 | 东北大学 | Particle-free nickel-based conductive ink and preparation method thereof |
| CN113629155A (en) * | 2021-08-06 | 2021-11-09 | 常州时创能源股份有限公司 | Crystalline silicon solar cell |
-
2021
- 2021-11-29 CN CN202111430455.3A patent/CN114156368A/en active Pending
Patent Citations (8)
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|---|---|---|---|---|
| KR20070049760A (en) * | 2005-11-09 | 2007-05-14 | 주식회사 나노신소재 | Metallic ink, and method for forming of electrode using the same and substrate |
| CN102573313A (en) * | 2012-02-13 | 2012-07-11 | 苏州晶讯科技股份有限公司 | Method for utilizing base metal catalytic ink to manufacture printed circuit |
| CN106549081A (en) * | 2015-09-16 | 2017-03-29 | 比亚迪股份有限公司 | A kind of method for making electrode of solar battery |
| CN105336627A (en) * | 2015-10-21 | 2016-02-17 | 哈尔滨工业大学 | Method for preparing high temperature service nanocrystalline joint through pulse current low temperature rapid sintering |
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