CN114156244A - Thermoelectric component with thermoelectric device and radiating fin integrated - Google Patents
Thermoelectric component with thermoelectric device and radiating fin integrated Download PDFInfo
- Publication number
- CN114156244A CN114156244A CN202111283320.9A CN202111283320A CN114156244A CN 114156244 A CN114156244 A CN 114156244A CN 202111283320 A CN202111283320 A CN 202111283320A CN 114156244 A CN114156244 A CN 114156244A
- Authority
- CN
- China
- Prior art keywords
- thermoelectric
- thermoelectric material
- ceramic
- flow deflector
- material crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 121
- 239000000463 material Substances 0.000 claims abstract description 100
- 239000013078 crystal Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000017525 heat dissipation Effects 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000011224 oxide ceramic Substances 0.000 claims description 9
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 7
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- BJBUTJPAZHELKY-UHFFFAOYSA-N manganese tungsten Chemical compound [Mn].[W] BJBUTJPAZHELKY-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000712 assembly Effects 0.000 abstract description 2
- 238000000429 assembly Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CZJCMXPZSYNVLP-UHFFFAOYSA-N antimony zinc Chemical compound [Zn].[Sb] CZJCMXPZSYNVLP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of thermoelectric assemblies, and provides a thermoelectric assembly with a thermoelectric device and a radiating fin integrated, which comprises a first ceramic substrate, a second ceramic substrate and thermoelectric material crystal grains; a first flow deflector is welded on the first ceramic substrate, a second flow deflector is welded on the second ceramic substrate, and the thermoelectric material crystal grain is welded on the first flow deflector at one end and on the second flow deflector at the other end; at least one of the first ceramic substrate and the second ceramic substrate is a ceramic substrate with fins, and the ceramic substrate with fins comprises a ceramic base and heat dissipation fins which are integrally formed. The invention can improve the conversion efficiency of the thermoelectric module, reduce the production cost of the thermoelectric module and improve the production efficiency of the thermoelectric module.
Description
Technical Field
The invention relates to the technical field of thermoelectric assemblies, in particular to a thermoelectric assembly integrating a thermoelectric device and a radiating fin.
Background
In the thermoelectric device industry at present, the traditional thermoelectric component is a component structure formed by respectively and independently manufacturing the thermoelectric device and a heat sink and then combining the thermoelectric device and the heat sink together. As shown in fig. 1, a conventional thermoelectric device is formed by bonding a thermoelectric material crystal grain 3 and two thin ceramic substrates, i.e., a first ceramic substrate 1 and a second ceramic substrate 2, and a heat sink 9 is made of an aluminum or copper material.
In use, the thermoelectric device must be coupled to a metal heat sink via a thermally conductive grease, a thermally conductive pad, a phase change material, a graphite sheet, and a fastener. This forms an interface between the thermoelectric device and the metal heat sink. Since the thermal conductivity of this interface is relatively low, a thermal resistance is created, thereby reducing the efficiency of heat conduction.
In order to make the surface of the ceramic chip of the thermoelectric device and the surface of the metal heat sink have a good contact, the flatness of the ceramic chip of the thermoelectric device and the surface of the metal heat sink must be controlled to be 0.013mm or less. The control difficulty of the small flatness is high, and the production cost of the thermoelectric module is increased.
In order to integrate the thermoelectric device and the metal heat sink and reduce the interface thermal resistance, the thermoelectric device and the metal heat sink need to be connected with a fastener. In practical applications, an experienced assembly process is inevitably required to control the moment during assembly to prevent the breakage of the ceramic substrate or the thermoelectric crystal grains in the thermoelectric device. On the one hand, the experienced assembly increases the production cost, and on the other hand, when the operator is not skilled, it is difficult to control the moment during the assembly, which easily causes the breakage of the ceramic substrate or the thermoelectric material crystal grains in the thermoelectric device, and reduces the thermoelectric performance and the production efficiency of the thermoelectric module.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a thermoelectric component with a thermoelectric device and a radiating fin integrated, which can improve the conversion efficiency of the thermoelectric component, reduce the production cost of the thermoelectric component and improve the production efficiency of the thermoelectric component.
The technical scheme of the invention is as follows:
a thermoelectric component with a thermoelectric device and a heat sink integrated is characterized by comprising a first ceramic substrate (1), a second ceramic substrate (2) and thermoelectric material crystal grains (3); a first flow deflector (4) is welded on the first ceramic substrate (1), a second flow deflector (5) is welded on the second ceramic substrate (2), and the thermoelectric material crystal grain (3) is welded on the first flow deflector (4) at one end and on the second flow deflector (5) at the other end; at least one of the first ceramic substrate (1) and the second ceramic substrate (2) is a ceramic substrate with fins, and the ceramic substrate with fins comprises a ceramic base (6) and heat dissipation fins (7) which are integrally formed.
Furthermore, the ceramic base (6) is made of one of aluminum oxide ceramic, aluminum nitride ceramic, beryllium oxide ceramic and silicon carbide ceramic, and the heat dissipation fins (7) are made of one of aluminum nitride ceramic, beryllium oxide ceramic, silicon carbide ceramic, copper and aluminum.
Furthermore, the ceramic base (6) is flat, and the height of the ceramic base (6) is 1-5 mm.
Further, the ceramic base (6) is in a cuboid or cylinder shape, and the height of the ceramic base (6) is 1-5 mm; when the ceramic base (6) is in a cuboid shape, the length of the ceramic base (6) is 4-70 mm, and the width of the ceramic base (6) is 4-70 mm; when the ceramic base (6) is in a cylindrical shape, the diameter of the bottom surface of the ceramic base (6) is 10-70 mm.
Furthermore, the ceramic base (6) is in the shape of a regular quadrangular prism, the height of the ceramic base (6) is 1-5 mm, and the side length of the bottom surface is 4-70 mm.
Furthermore, the height of the radiating fins (7) is 0.5mm-50 mm; the shape of the radiating fin (7) is one of a cylinder, a cone or a regular quadrangular prism; when the radiating fins (7) are cylindrical or conical, the diameter of the bottom surfaces of the radiating fins (7) is 0.5mm-3.0 mm; when the heat dissipation fins (7) are in the shape of a regular quadrangular prism, the side length of the bottom surfaces of the heat dissipation fins (7) is 1.0mm-5.0 mm; the radiating fins (7) are uniformly distributed in a matrix form of M rows and N columns, and the distance between every two adjacent radiating fins (7) is 0.5mm-2.0 mm; wherein M, N are integers.
Furthermore, the height of the radiating fins (7) is 0.5mm-50 mm; the shape of the radiating fins (7) is cuboid, the length of the radiating fins (7) is 1.0-70 mm, and the width of the radiating fins is 0.5-3.0 mm; the heat dissipation fins (7) are uniformly distributed in a matrix form of m rows and n columns, and the distance between every two adjacent heat dissipation fins (7) is 0.5mm-2.0 mm; wherein m and n are integers.
Furthermore, the first flow deflector (4) and the second flow deflector (5) are both in a metallized pattern; the metallization pattern is a metallization pattern prepared by adopting a tungsten-manganese or molybdenum-manganese material, or a copper metallization pattern covered with nickel and prepared by adopting a DBC (direct bonding) process, or a copper metallization pattern covered with nickel and prepared by adopting a thick film process, or a copper metallization pattern covered with nickel and prepared by adopting a sputtering electroplating process; the shapes of the first flow deflector (4) and the second flow deflector (5) are cuboids, and the lengths of the first flow deflector (4) and the second flow deflector (5) are 1.5-6.0 mm, the widths of the first flow deflector and the second flow deflector are 0.5-2.1 mm, and the heights of the first flow deflector and the second flow deflector are 0.5-3.5 mm.
Furthermore, the first flow deflector (4) and the second flow deflector (5) are provided with a plurality of thermoelectric material crystal grains (3), at least two pairs of thermoelectric material crystal grains (3) are provided, each pair of thermoelectric material crystal grains comprises an N-type thermoelectric material crystal grain (3-1) and a P-type thermoelectric material crystal grain (3-2), the N-type thermoelectric material crystal grain (3-1) is a thermoelectric material crystal grain with the conduction type of N and taking electrons as carriers, and the P-type thermoelectric material crystal grain (3-2) is a thermoelectric material crystal grain with the conduction type of P and taking holes as carriers; the first flow deflector (4) and the second flow deflector (5) alternately connect the N-type thermoelectric material crystal grains (3-1) and the P-type thermoelectric material crystal grains (3-2) in series; the thermoelectric material crystal grains (3) are cuboid or cylinder-shaped, and the height of the thermoelectric material crystal grains (3) is 0.3mm-2.54 mm; when the thermoelectric material crystal grains (3) are cuboid, the length of the thermoelectric material crystal grains (3) is 0.4-2.0 mm, and the width of the thermoelectric material crystal grains (3) is 0.4-2.0 mm; when the thermoelectric material crystal grains (3) are cylindrical in shape, the diameter of the thermoelectric material crystal grains (3) is 1.0mm-3.0 mm.
The thermoelectric module further comprises at least one pair of wires, each pair of wires comprises a first wire (8-1) and a second wire (8-2), the first wire (8-1) is welded on a current guide sheet welded with a first N-type thermoelectric material crystal grain (3-1) in the thermoelectric material crystal grains connected in series at one end, and is used for connecting a power supply anode at the other end, the second wire (8-2) is welded on a current guide sheet welded with a last P-type thermoelectric material crystal grain (3-2) in the thermoelectric material crystal grains connected in series at one end, and is used for connecting a power supply cathode at the other end; the wire is a single-stranded bare wire or a multi-stranded wire, and when the wire is a multi-stranded wire, the outer layer of the wire is wrapped with a PVC or Teflon insulating layer.
The invention has the beneficial effects that:
(1) according to the invention, the radiating fins and the ceramic base are integrally formed to obtain the ceramic substrate with the fins, and the thermoelectric material crystal grains are welded with the flow deflectors welded on the ceramic substrate to realize the integration of the thermoelectric device and the radiating fins, so that on one hand, the thermal resistance between the thermoelectric device and the radiating fins in the traditional thermoelectric assembly, which is generated due to the existence of the interface, is eliminated, the conversion efficiency of the thermoelectric assembly is improved, and meanwhile, the increase of the production cost caused by the high-precision surface flatness control requirement of the thermoelectric device and the radiating fins in the traditional thermoelectric assembly is avoided; on the other hand, after the thermoelectric material crystal grains and the ceramic base are welded together, the thermoelectric component completes the assembly process, the assembly process of the thermoelectric device and the metal radiating fins is omitted, the breakage of the ceramic substrate or the thermoelectric material crystal grains in the thermoelectric device, which is caused by the fact that the torque during assembly is difficult to control due to insufficient experience of operators in the assembly process of the conventional thermoelectric component, is avoided, the production cost of the thermoelectric component is reduced, and the production efficiency is improved.
(2) The invention further improves the conversion efficiency of the thermoelectric component by arranging the radiating fins into a cylindrical, conical or cuboid shape and distributing the radiating fins in a matrix form and adding the accurately designed size of the radiating fins.
Drawings
Fig. 1 is a schematic structural view of a conventional thermoelectric module.
Fig. 2 is a schematic view showing the structure of a thermoelectric module in which a thermoelectric device of the present invention is integrated with a heat sink in example 1.
Fig. 3 is a schematic view showing the structure of a thermoelectric module in which a thermoelectric device of the present invention is integrated with a heat sink in example 2.
In the figure, 1-a first ceramic substrate, 2-a second ceramic substrate, 3-thermoelectric material crystal grains, 3-1-N type thermoelectric material crystal grains, 3-2-P type thermoelectric material crystal grains, 4-a first deflector, 5-a second deflector, 6-a ceramic base, 7-a heat dissipation fin, 8-1-a first lead, 8-2-a second lead, and 9-a heat dissipation fin.
Detailed Description
The invention will be further described with reference to the accompanying drawings and specific embodiments.
Example 1
As shown in fig. 2, the thermoelectric module in which the thermoelectric device of the present invention is integrated with a heat sink in example 1 includes a first ceramic substrate 1, a second ceramic substrate 2, thermoelectric material crystal grains 3; a first flow deflector 4 is welded on the first ceramic substrate 1, a second flow deflector 5 is welded on the second ceramic substrate 2, and the thermoelectric material crystal grain 3 is welded on the first flow deflector 4 at one end and on the second flow deflector 5 at the other end; the second ceramic substrate 2 of the first ceramic substrate 1 and the second ceramic substrate 2 is a ceramic substrate with fins, and the ceramic substrate with fins comprises a ceramic base 6 and heat dissipation fins 7 which are integrally formed. The thermoelectric device can be a thermoelectric refrigeration device or a thermoelectric power generation device. In this embodiment 1, the thermoelectric device is a thermoelectric cooling device TEC, and the thermoelectric assembly is a thermoelectric cooling assembly TEA.
According to the invention, the radiating fins and the ceramic base are integrally formed to obtain the ceramic substrate with the fins, and the thermoelectric material crystal grains are welded with the flow deflectors welded on the ceramic substrate, so that the integration of the thermoelectric device and the radiating fins is realized, the thermal resistance between the thermoelectric device and the radiating fins in the traditional thermoelectric assembly caused by the existence of the interface is eliminated, the conversion efficiency of the thermoelectric assembly is improved, and the increase of the production cost caused by the high-precision surface flatness control requirement of the thermoelectric device and the radiating fins in the traditional thermoelectric assembly is avoided.
According to the invention, after the thermoelectric material crystal grains and the ceramic base are welded together, the thermoelectric component completes the assembly process, the assembly process of the thermoelectric device and the metal radiating fin is omitted, the breakage of the ceramic substrate or the thermoelectric material crystal grains in the thermoelectric device caused by the fact that the torque during assembly is difficult to control due to insufficient experience of operators in the assembly process of the conventional thermoelectric component is avoided, the production cost of the thermoelectric component is reduced, and the production efficiency is improved.
The ceramic base 6 and the heat dissipation fins 7 integrally formed in the ceramic substrate with fins of the present invention may be made of the same material or different materials. The ceramic base 6 is made of one of aluminum oxide ceramic, aluminum nitride ceramic, beryllium oxide ceramic and silicon carbide ceramic, and the heat dissipation fins 7 are made of one of aluminum nitride ceramic, beryllium oxide ceramic, silicon carbide ceramic, copper and aluminum. For example, when the ceramic base 6 is made of alumina ceramic, the heat dissipation fins 7 made of ceramic, copper or aluminum with high thermal conductivity, which are different from the ceramic base 6, are integrally formed with the ceramic base 6 by sintering, so that the advantage of low production cost of alumina ceramic can be utilized, the interface between the thermoelectric device and the heat dissipation fins can be eliminated, and the conversion efficiency and the production efficiency of the thermoelectric module can be improved. As a preferred embodiment of the present invention, in this embodiment 1, the ceramic base 6 and the heat dissipation fins 7 are made of beryllium oxide ceramic with high thermal conductivity, and after the ceramic base 6 and the heat dissipation fins 7 are integrally formed, the conversion efficiency and the production efficiency of the thermoelectric module are greatly improved.
The ceramic base 6 is flat, and the height of the ceramic base 6 is 1mm-5 mm. Further, the ceramic base 6 is in a cuboid or cylinder shape; when the ceramic base 6 is in a cuboid shape, the length of the ceramic base 6 is 4mm-70mm, and the width of the ceramic base 6 is 4mm-70 mm; when the ceramic base 6 is in the shape of a cylinder, the diameter of the bottom surface of the ceramic base 6 is 10mm-70 mm. Furthermore, the ceramic base 6 is in the shape of a regular quadrangular prism, and the side length of the bottom surface of the ceramic base 6 is 4mm-70 mm.
The heat dissipating fins 7 may be fins of different sizes, different cross-sectional shapes, and different pitches:
the height of the heat radiating fins 7 is 0.5mm-50 mm. The shape of the heat dissipation fin 7 can be one of a cylinder, a cone or a regular quadrangular prism; when the shape of the radiating fins 7 is a cylinder or a cone, the diameter of the bottom surfaces of the radiating fins 7 is 0.5mm-3.0 mm; when the heat dissipation fins 7 are in the shape of a regular quadrangular prism, the side length of the bottom surfaces of the heat dissipation fins 7 is 1.0mm-5.0 mm; the heat dissipation fins 7 are uniformly distributed in a matrix form of M rows and N columns, the distance between every two adjacent heat dissipation fins 7 is 0.5mm-2.0mm, namely the distance between every two adjacent heat dissipation fins 7 in each column is 0.5mm-2.0mm, and the distance between every two adjacent heat dissipation fins 7 in each row is 0.5mm-2.0 mm; wherein M, N are integers.
The shape of the radiating fins 7 can also be a cuboid, and the length of the radiating fins 7 is 1.0mm-70mm, and the width of the radiating fins 7 is 0.5m-3.0 mm; the heat dissipation fins 7 are uniformly distributed in a matrix form of m rows and n columns, and the distance between every two adjacent heat dissipation fins 7 is 0.5mm-2.0 mm; wherein m and n are integers.
In this embodiment 1, the design dimensions of the thermoelectric device are as follows: the ceramic base 6 is in the shape of a regular quadrangular prism, and the ceramic base 6 has a length of 30mm, a width of 30mm and a height of 2 mm. The shape of the heat dissipation fins 7 is a cuboid, and the length of the heat dissipation fins 7 is 30mm, the width thereof is 1mm, and the height thereof is 15 mm.
The first flow deflector 4 and the second flow deflector 5 are both in a metallized pattern; the metallization pattern is a metallization pattern prepared by adopting a tungsten-manganese or molybdenum-manganese material, or a copper metallization pattern which is prepared by adopting a DBC (direct bonding copper) process and is covered with nickel, or a copper metallization pattern which is prepared by adopting a thick film process and is covered with nickel, or a copper metallization pattern which is prepared by adopting a sputtering electroplating process and is covered with nickel; the shapes of the first flow deflector 4 and the second flow deflector 5 are cuboids, and the lengths of the first flow deflector 4 and the second flow deflector 5 are 1.5-6.0 mm, the widths of the first flow deflector 4 and the second flow deflector 5 are 0.5-2.1 mm, and the heights of the first flow deflector 4 and the second flow deflector 5 are 0.5-3.5 mm.
The first flow deflector 4 and the second flow deflector 5 are provided with a plurality of thermoelectric material crystal grains 3, at least two pairs of thermoelectric material crystal grains 3 are provided, each pair of thermoelectric material crystal grains comprises an N-type thermoelectric material crystal grain 3-1 and a P-type thermoelectric material crystal grain 3-2, the N-type thermoelectric material crystal grain 3-1 is a thermoelectric material crystal grain with the conduction type of N and the hole as a carrier, and the P-type thermoelectric material crystal grain 3-2 is a thermoelectric material crystal grain with the conduction type of P and the hole as a carrier; the first flow deflector 4 and the second flow deflector 5 alternately connect the N-type thermoelectric material crystal grains 3-1 and the P-type thermoelectric material crystal grains 3-2 in series; the thermoelectric material crystal grains 3 can be cuboid or cylinder, and the height of the thermoelectric material crystal grains 3 is 0.3mm-2.54 mm; when the thermoelectric material crystal grain 3 is in a cuboid shape, the length of the thermoelectric material crystal grain 3 is 0.4mm-2.0mm, and the width of the thermoelectric material crystal grain 3 is 0.4mm-2.0 mm; when the thermoelectric material crystal grains 3 are cylindrical in shape, the diameter of the thermoelectric material crystal grains 3 is 1mm to 3.0 mm. Further, the thermoelectric material crystal grains 3 may have a square shape in a rectangular parallelepiped. The thermoelectric material crystal grain 3 is made of one of bismuth telluride and compounds thereof, lead telluride and compounds thereof, copper selenide and compounds thereof, and zinc antimonide and compounds thereof.
The thermoelectric module of the invention also comprises at least one pair of leads, each pair of leads comprises a first lead 8-1 and a second lead 8-2, the first lead 8-1 is welded on a guide sheet welded with the first N-type thermoelectric material grain 3-1 in the thermoelectric material grains connected in series at one end, and is used for connecting the positive pole of a power supply at the other end, the second lead 8-2 is welded on a guide sheet welded with the last P-type thermoelectric material grain 3-2 in the thermoelectric material grains connected in series at one end, and is used for connecting the negative pole of the power supply at the other end; the wire is a single-stranded bare wire or a multi-stranded wire, and when the wire is a multi-stranded wire, the outer layer of the wire is wrapped with a PVC or Teflon insulating layer.
In this embodiment 1, the first guide vanes 4 and the second guide vanes 5 are respectively sintered on the ceramic bases 6 of the first ceramic substrate 1 and the second ceramic substrate 2 by using a brazing process according to the design of the thermoelectric device. The thermoelectric material crystal grain 3 is in a cuboid shape, the length is 0.5mm, the width is 0.5mm, the height is 2.5mm, and the material is bismuth telluride; the length of the wire is 2.54 mm. The N-type thermoelectric material crystal grains 3-1 and the P-type thermoelectric material crystal grains 3-2 are welded with the corresponding first flow deflectors 4 and the corresponding second flow deflectors 5 simultaneously according to the mode shown in figure 2 by using a welding jig, reflow soldering equipment and cleaning-free solder, so that the N-type thermoelectric material crystal grains 3-1 and the P-type thermoelectric material crystal grains 3-2 are alternately and electrically connected in series, and a series circuit is formed from the first N-type thermoelectric material crystal grain 3-1 to the last P-type thermoelectric material crystal grain 3-2.
Example 2
As shown in fig. 3, the present embodiment 2 is different from embodiment 1 in that: and two ceramic substrates of the first ceramic substrate 1 and the second ceramic substrate 2 are both ceramic substrates with fins.
It is to be understood that the above-described embodiments are only a few embodiments of the present invention, and not all embodiments. The above examples are only for explaining the present invention and do not constitute a limitation to the scope of protection of the present invention. All other embodiments, which can be derived by those skilled in the art from the above-described embodiments without any creative effort, namely all modifications, equivalents, improvements and the like made within the spirit and principle of the present application, fall within the protection scope of the present invention claimed.
Claims (10)
1. A thermoelectric component with a thermoelectric device and a heat sink integrated is characterized by comprising a first ceramic substrate (1), a second ceramic substrate (2) and thermoelectric material crystal grains (3); a first flow deflector (4) is welded on the first ceramic substrate (1), a second flow deflector (5) is welded on the second ceramic substrate (2), and the thermoelectric material crystal grain (3) is welded on the first flow deflector (4) at one end and on the second flow deflector (5) at the other end; at least one of the first ceramic substrate (1) and the second ceramic substrate (2) is a ceramic substrate with fins, and the ceramic substrate with fins comprises a ceramic base (6) and heat dissipation fins (7) which are integrally formed.
2. The thermoelectric device and heat sink integrated thermoelectric module as claimed in claim 1, wherein the ceramic base (6) is made of one of alumina ceramic, aluminum nitride ceramic, beryllium oxide ceramic and silicon carbide ceramic, and the heat sink fins (7) are made of one of aluminum nitride ceramic, beryllium oxide ceramic, silicon carbide ceramic, copper and aluminum.
3. The thermoelectric device and heat sink integrated thermoelectric module as set forth in claim 1, wherein the ceramic base (6) has a flat plate shape, and the height of the ceramic base (6) is 1mm to 5mm.
4. The thermoelectric device and heat sink integrated thermoelectric assembly as claimed in claim 1, wherein the ceramic base (6) is in the shape of a cuboid or cylinder, the height of the ceramic base (6) being 1mm-5 mm; when the ceramic base (6) is in a cuboid shape, the length of the ceramic base (6) is 4-70 mm, and the width of the ceramic base (6) is 4-70 mm; when the ceramic base (6) is in a cylindrical shape, the diameter of the bottom surface of the ceramic base (6) is 10-70 mm.
5. The thermoelectric device and heat sink integrated thermoelectric module as set forth in claim 1, wherein the ceramic base (6) has a shape of a regular quadrangular prism, the height of the ceramic base (6) being 1mm to 5mm, and the bottom surface side being 4mm to 70 mm.
6. A thermoelectric device and heat sink integrated thermoelectric assembly as claimed in claim 1, wherein the height of the heat sink fins (7) is 0.5mm-50 mm; the shape of the radiating fin (7) is one of a cylinder, a cone or a regular quadrangular prism; when the radiating fins (7) are cylindrical or conical, the diameter of the bottom surfaces of the radiating fins (7) is 0.5mm-3.0 mm; when the heat dissipation fins (7) are in the shape of a regular quadrangular prism, the side length of the bottom surfaces of the heat dissipation fins (7) is 1.0mm-5.0 mm; the radiating fins (7) are uniformly distributed in a matrix form of M rows and N columns, and the distance between every two adjacent radiating fins (7) is 0.5mm-2.0 mm; wherein M, N are integers.
7. A thermoelectric device and heat sink integrated thermoelectric assembly as claimed in claim 1, wherein the height of the heat sink fins (7) is 0.5mm-50 mm; the shape of the radiating fins (7) is cuboid, the length of the radiating fins (7) is 1.0-70 mm, and the width of the radiating fins is 0.5-3.0 mm; the heat dissipation fins (7) are uniformly distributed in a matrix form of m rows and n columns, and the distance between every two adjacent heat dissipation fins (7) is 0.5mm-2.0 mm; wherein m and n are integers.
8. The thermoelectric device and heat sink integrated thermoelectric assembly as claimed in claim 1, wherein the first flow deflectors (4) and the second flow deflectors (5) are each a metallization pattern; the metallization pattern is a metallization pattern prepared by adopting a tungsten-manganese or molybdenum-manganese material, or a copper metallization pattern covered with nickel and prepared by adopting a DBC (direct bonding) process, or a copper metallization pattern covered with nickel and prepared by adopting a thick film process, or a copper metallization pattern covered with nickel and prepared by adopting a sputtering electroplating process; the shapes of the first flow deflector (4) and the second flow deflector (5) are cuboids, and the lengths of the first flow deflector (4) and the second flow deflector (5) are 1.5-6.0 mm, the widths of the first flow deflector and the second flow deflector are 0.5-2.1 mm, and the heights of the first flow deflector and the second flow deflector are 0.5-3.5 mm.
9. The thermoelectric device and heat sink integrated thermoelectric module as claimed in claim 1, wherein a plurality of the first current guiding plate (4) and the second current guiding plate (5) are provided, at least two pairs of the thermoelectric material grains (3) are provided, each pair of thermoelectric material grains comprises an N-type thermoelectric material grain (3-1) and a P-type thermoelectric material grain (3-2), the N-type thermoelectric material grain (3-1) is a thermoelectric material grain with an electron as a carrier and an electric conduction type N, and the P-type thermoelectric material grain (3-2) is a thermoelectric material grain with an electric conduction type P and a hole as a carrier; the first flow deflector (4) and the second flow deflector (5) alternately connect the N-type thermoelectric material crystal grains (3-1) and the P-type thermoelectric material crystal grains (3-2) in series; the thermoelectric material crystal grains (3) are cuboid or cylinder-shaped, and the height of the thermoelectric material crystal grains (3) is 0.3mm-2.54 mm; when the thermoelectric material crystal grains (3) are cuboid, the length of the thermoelectric material crystal grains (3) is 0.4-2.0 mm, and the width of the thermoelectric material crystal grains (3) is 0.4-2.0 mm; when the thermoelectric material crystal grains (3) are cylindrical in shape, the diameter of the thermoelectric material crystal grains (3) is 1.0mm-3.0 mm.
10. The thermoelectric device and heat sink integrated thermoelectric module as set forth in claim 9, further comprising at least one pair of wires, each pair of wires comprising a first wire (8-1) and a second wire (8-2), the first wire (8-1) being welded at one end to the current collector to which the first N-type thermoelectric material crystal grain (3-1) among the thermoelectric material crystal grains connected in series is welded and being connected at the other end to a positive electrode of a power supply, the second wire (8-2) being welded at one end to the current collector to which the last P-type thermoelectric material crystal grain (3-2) among the thermoelectric material crystal grains connected in series is welded and being connected at the other end to a negative electrode of the power supply; the wire is a single-stranded bare wire or a multi-stranded wire, and when the wire is a multi-stranded wire, the outer layer of the wire is wrapped with a PVC or Teflon insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111283320.9A CN114156244A (en) | 2021-11-01 | 2021-11-01 | Thermoelectric component with thermoelectric device and radiating fin integrated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111283320.9A CN114156244A (en) | 2021-11-01 | 2021-11-01 | Thermoelectric component with thermoelectric device and radiating fin integrated |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114156244A true CN114156244A (en) | 2022-03-08 |
Family
ID=80458994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111283320.9A Pending CN114156244A (en) | 2021-11-01 | 2021-11-01 | Thermoelectric component with thermoelectric device and radiating fin integrated |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114156244A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003174204A (en) * | 2001-12-07 | 2003-06-20 | Sony Corp | Thermoelectric conversion device |
| CN102446877A (en) * | 2010-10-11 | 2012-05-09 | 海洋王照明科技股份有限公司 | Semiconductor cooling device |
| CN216213394U (en) * | 2021-11-01 | 2022-04-05 | 金川集团铜业有限公司 | Thermoelectric component with thermoelectric device and radiating fin integrated |
-
2021
- 2021-11-01 CN CN202111283320.9A patent/CN114156244A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003174204A (en) * | 2001-12-07 | 2003-06-20 | Sony Corp | Thermoelectric conversion device |
| CN102446877A (en) * | 2010-10-11 | 2012-05-09 | 海洋王照明科技股份有限公司 | Semiconductor cooling device |
| CN216213394U (en) * | 2021-11-01 | 2022-04-05 | 金川集团铜业有限公司 | Thermoelectric component with thermoelectric device and radiating fin integrated |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108140713B (en) | Thermoelectric conversion module and thermoelectric conversion device | |
| US20190058101A1 (en) | Thermoelectric conversion module and thermoelectric conversion device | |
| CN1925183A (en) | Thermoelectric element device and thermoelectric module | |
| JP2012151328A (en) | Heat sink and semiconductor device equipped with heat sink | |
| CN216213394U (en) | Thermoelectric component with thermoelectric device and radiating fin integrated | |
| KR102146021B1 (en) | Thermoelectric element thermoelectric moudule using the same, and cooling device using thermoelectric moudule | |
| KR20150021366A (en) | Thermoelectric element thermoelectric moudule using the same, and cooling device using thermoelectric moudule | |
| CN107534077B (en) | Thermoelectric element, thermoelectric module, and heat conversion device including thermoelectric module | |
| JP2016174114A (en) | Thermoelectric conversion module | |
| US9202771B2 (en) | Semiconductor chip structure | |
| JP5713526B2 (en) | Thermoelectric conversion module, cooling device, power generation device and temperature control device | |
| KR20180029409A (en) | Thermoelectric element | |
| CN108028306B (en) | Thermoelectric conversion module and thermoelectric conversion device | |
| CN114156244A (en) | Thermoelectric component with thermoelectric device and radiating fin integrated | |
| KR102323978B1 (en) | Thermoelectric module | |
| CN215644461U (en) | Power module and electronic equipment | |
| CN115915888A (en) | Preparation method of semiconductor refrigerating sheet and semiconductor refrigerating module | |
| KR20150028577A (en) | Cooling thermoelectric moudule and device using the same | |
| KR102456680B1 (en) | Thermoelectric element | |
| KR20180128186A (en) | Thermoelectric module | |
| JP5404025B2 (en) | Production method of thermoelectric conversion module | |
| JP5724415B2 (en) | Semiconductor module | |
| JP5247531B2 (en) | Thermoelectric conversion module | |
| KR20210027858A (en) | Thermoelectric module | |
| CN214705901U (en) | Substrate structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20240619 Address after: 737199 No. 2 Jianshe Road, Jinchuan District, Jinchang City, Gansu Province (east of Beijing Road, west of Heya Road, south of Guiyang Road) Applicant after: Jinchuan Group Copper Gui Co.,Ltd. Country or region after: China Applicant after: Gansu Jinchuan liuzu new material application technology Co.,Ltd. Address before: 737100 No. 2 Jianshe Road, Jinchuan District, Jinchang City, Gansu Province Applicant before: Jinchuan Group Copper Co.,Ltd. Country or region before: China Applicant before: Gansu Jinchuan liuzu new material application technology Co.,Ltd. Applicant before: JINCHUAN GROUP Co.,Ltd. |