CN114148987A - Method for manufacturing micro-electro-mechanical system device, and electronic apparatus - Google Patents
Method for manufacturing micro-electro-mechanical system device, and electronic apparatus Download PDFInfo
- Publication number
- CN114148987A CN114148987A CN202111315844.1A CN202111315844A CN114148987A CN 114148987 A CN114148987 A CN 114148987A CN 202111315844 A CN202111315844 A CN 202111315844A CN 114148987 A CN114148987 A CN 114148987A
- Authority
- CN
- China
- Prior art keywords
- layer
- mems device
- mems
- manufacturing
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 118
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000708 deep reactive-ion etching Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
A method of manufacturing a micro electro mechanical system device, and an electronic apparatus are disclosed. The MEMS device includes a thin film type MEMS device layer, and the manufacturing method includes: forming a sacrificial layer on a micro electro mechanical system substrate; forming a MEMS device layer on the sacrificial layer; temporarily bonding a carrier layer to the MEMS device layer via a temporary bonding layer, wherein the carrier layer is transparent and rigid; releasing the MEMS device layer by processing the sacrificial layer; debonding the carrier layer from the released MEMS device layer by exposure; and removing the temporary bonding layer.
Description
Technical Field
The present application relates to a method for manufacturing a mems device, and an electronic apparatus.
Background
Micro-Electro-Mechanical systems (MEMS), also called Micro-Electro-Mechanical systems, microsystems, micromachines, etc., refer to high-tech devices with dimensions of a few millimeters or even smaller.
During the MEMS device fabrication process, the MEMS layers of the MEMS device are released by etching the sacrificial layer. Mems devices such as mems microphones, pressure sensors, thin film bulk acoustic resonators typically have a thin film type of mems device layer. Thin film type MEMS device layers have a large aspect ratio (i.e., surface size to thickness ratio). Thus, when the patterned MEMS device layer is released from the unpatterned sacrificial layer (typically silicon dioxide), the MEMS device layer experiences an unbalanced stress gradient. Thus, the MEMS device layers may be subject to stress concentrations or mechanical damage when released (sacrificial layer removed).
Such mems devices having thin film type mems device layers may be, for example, mems microphones, thin film bulk acoustic resonators, piezoelectric pressure sensors, comb drive capacitive sensors (accelerometers, gyroscopes, etc.), spintronic mems sensors, etc.
Disclosure of Invention
The present application is directed to a new solution for a mems device.
According to a first aspect of the present disclosure, there is provided a method of manufacturing a microelectromechanical systems device, wherein the microelectromechanical systems device includes a thin film type microelectromechanical systems device layer, and the method of manufacturing includes: forming a sacrificial layer on a micro electro mechanical system substrate; forming a MEMS device layer on the sacrificial layer; temporarily bonding a carrier layer to the MEMS device layer via a temporary bonding layer, wherein the carrier layer is transparent and rigid; releasing the MEMS device layer by processing the sacrificial layer; debonding the carrier layer from the released MEMS device layer by exposure; and removing the temporary bonding layer.
According to a second aspect of the present disclosure, there is provided a microelectromechanical systems device manufactured using the manufacturing method described above.
According to a third aspect of the present disclosure, an electronic device is provided, comprising a microelectromechanical systems device according to the above.
In the embodiment, the support effect of the carrier layer is utilized to avoid the damage of the stress on the MEMS device layer during releasing, so that the performance and/or yield of the MEMS device are ensured.
Other features of the present disclosure and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the disclosure.
FIG. 1 shows a schematic diagram of a MEMS device upon release.
FIG. 2 illustrates a stress damage diagram of a MEMS device upon release.
FIGS. 3-7 are schematic flow diagrams of methods of fabricating a MEMS device according to one embodiment.
FIG. 8 is a schematic diagram of an electronic device, according to one embodiment.
Reference numerals:
101. a substrate; 102. a sacrificial layer; 103. a micro-electro-mechanical system device layer; 104. a passivation layer; 105. a bonding pad and an interconnection structure layer; 106. a temporary protective layer; 107 back holes; 108. a sensing layer; 1. a substrate; 2. a sacrificial layer; 3. a micro-electro-mechanical system device layer; 4. a temporary bonding layer; 5. a carrier layer; 6. a back hole; 200. an electronic device; 201. a microelectromechanical systems device.
Detailed Description
Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
FIG. 1 shows a schematic diagram of a MEMS device upon release. FIG. 2 shows a stress diagram of the MEMS device upon release.
FIG. 1 shows a schematic diagram of a MEMS device before release. As shown in fig. 1, the mems device includes a substrate 101, a sacrificial layer 102, a mems device layer 103, a passivation layer 104, a pad and interconnect structure layer 105, and a sensing layer 108. In fig. 1, a back hole 107 is formed in a substrate 101. Optionally, a temporary protection layer 106 is formed over the MEMS device layer 103. The material of the temporary protection layer 106 is typically photoresist.
The substrate 101 is, for example, a thin microelectromechanical system silicon substrate. The material of the sacrificial layer 102 is typically silicon dioxide, which has a high compressive resistance and is typically capable of withstanding pressures above 300 MPa. Micro-electromechanical systemThe system device layer 103 is a mechanical structure layer of the mems device, and may be, for example, a diaphragm, a cantilever beam, etc. The material of the mems device layer 103 may be silicon or polysilicon. Here, the MEMS device layer 103 is thin film type with a large aspect ratio. The thin film type mems device layer 103 can be damaged by the stress of the sacrificial layer 102. The material of the passivation layer 104 may be SiNx. The material of the pad and interconnect structure layer 105 may be Cr/Ni/Au, etc. The sensing layer 108 is, for example, a unit for sensing mechanical changes. For example, in FIG. 1, the sense layer 108 is shown as a magnetic source and a magnetoresistance. The sensing layer 108 may also be other sensing structures.
FIG. 2 illustrates the MEMS device layer 103 breaking upon release. For example, the MEMS device layer 103 is patterned, while the sacrificial layer beneath it is unpatterned. A back hole 107 is formed in the silicon substrate by front-to-back alignment lithography and Deep Reactive Ion Etching (DRIE). The back hole 107 stops at the sacrificial layer. The MEMS device layer 103 is typically designed to have low tensile stress. The sacrificial layer of silicon dioxide typically has a high compressive stress and is thick (e.g., 0.5-2 microns), which results in a large stress gradient. Thus, the MEMS device layer 103 is susceptible to cracking under such non-uniform stress, as shown in FIG. 2. The protective layer in fig. 1 is generally not rigid, and therefore, it cannot completely protect the thin film type mems device layer 103.
The inventors of the present invention propose the use of a wafer support system to assist in the release. Various embodiments are described below with reference to fig. 3-8.
FIGS. 3-7 illustrate schematic flow diagrams of methods of fabricating MEMS devices according to one embodiment.
As shown in fig. 3, a sacrificial layer 2 is formed on a mems substrate 1, and a mems device layer 3 is formed on the sacrificial layer 2.
The MEMS substrate 1 may be silicon, for example, having a thickness in the range of 380-750 microns. The sacrificial layer 2 is for example silicon dioxide or a buried oxide. The mems device layer 3 may be a mems mechanical layer, for example, the material may be silicon, polysilicon, or other material that forms a mechanical structure.
In addition, similar to fig. 1, a passivation layer, a pad, and an interconnect structure layer and a sensing layer may also be included on the mems device layer 3. Their description will not be repeated here.
Next, the carrier layer 5 is temporarily bonded to the mems device layer 3 via the temporary bonding layer 4. The carrier layer 5 is transparent and rigid. For example, the thickness of the carrier layer 5 is, for example, 300 to 700 μm. The carrier layer 5 may be a support wafer.
It will be understood by those skilled in the art that "transparent" here means that the carrier layer 5 is transparent to the light used for debonding. By "rigid" is meant that the carrier layer 5 is sufficient to support the MEMS device layer 3 when the sacrificial layer 2 is removed to resist stress upon release.
The material of the temporary bonding layer 4 may be, for example, photoresist, adhesive, or the like. The temperature at which the temporary bonding is performed by the temporary bonding layer 4 is preferably less than 150 degrees. For example, the thickness of the temporary bonding layer 4 is between 1 and 10 micrometers, preferably between 2 and 5 micrometers, so that the problem of temperature runaway due to thermal insulation can be avoided.
Fig. 4 and 5 show the process of releasing the mems device layer 3 by processing the sacrificial layer 2.
As shown in fig. 4, the substrate 1 is processed to form a back hole 6. The substrate 1 can be thinned to a thickness of 50 to 250 microns by back grinding. The substrate 1 may also be polished if desired (e.g., the thickness of the substrate 1 to be formed is less than 100 microns). Next, patterning and etching may be performed by deep reactive ion etching DRIE to form the back hole 6. At this stage, the back hole 6 stops at the sacrificial layer 2. The material of the sacrificial layer 2 may be silicon dioxide, which may be 0.5 to 2 microns thick. At this time, the carrier layer 5 stably supports the mems device layer 3, and thus, there is no additional stress concentration or damage in the mems device layer 3.
The mems device layer 3 is released as shown in fig. 5. The sacrificial layer 2 is etched to release the mems device layer 3 by reactive ion etching RIE or wet etching (e.g., using hydrofluoric acid HF or buffered oxide etchant BOE). Since the low stress level MEMS device layer 3 is supported by the rigid carrier layer 5 (or carrier wafer), the high stress level sacrificial layer can be safely removed, reducing the likelihood of damage to the MEMS device layer 3.
Fig. 6 shows the process of debonding the carrier layer 5 from the released mems device layer 3 by exposure. As shown by the arrows in fig. 6, light for debonding, for example, laser light, ultraviolet light, or the like is irradiated from the carrier layer 5 side. As a result of the irradiation with light, debonding occurs at the interface of the carrier layer 5 and the temporary bonding layer 4, and the carrier layer 5 and the temporary bonding layer 4 separate.
Here, the temporary bonding layer 4 is softer relative to the carrier layer 5, so that, upon exposure, the temporary bonding layer 4 may act as a stress buffer between the carrier layer 5 and the mems device layer 3, thereby avoiding damage to the mems device layer 3 upon debonding.
After debonding, the carrier layer 5 can be easily removed mechanically.
As shown in fig. 7, the temporary bonding layer 4 is removed. For example, the bonding layer 4 may be peeled off by oxygen plasma or solvent/chemical agent or the like.
The MEMS device formed in the above manner can form a lossless MEMS structure or a low-stress/controllable-stress MEMS structure on a thin MEMS substrate. This is very advantageous for high performance mems devices, for example, for high performance microphones. In addition, this can improve the yield of the MEMS device. Under the same conditions, the MEMS device layers may have lower stress in the MEMS devices formed by the methods in the embodiments herein as compared to previous MEMS devices. Furthermore, the mems devices herein differ from previous mems devices in that the process is different, e.g., where the temporary bonding layer is removed after the carrier layer is removed.
FIG. 8 shows a schematic diagram of an electronic device in accordance with one embodiment disclosed herein. As shown in FIG. 8, the electronic device 200 may include a MEMS device 201, and the MEMS device 201 may be a MEMS device formed by a process of 3-7. The electronic device 200 may be a cell phone, a tablet, a wearable device, etc. The MEMS magnetic sensor 201 may be a microphone, a pressure sensor, an inertial sensor, or the like.
Although certain specific embodiments of the present disclosure have been described in detail by way of example, it should be understood by those skilled in the art that the foregoing examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure.
Claims (10)
1. A method of manufacturing a mems device, wherein the mems device comprises a thin film type mems device layer, and the method comprises:
forming a sacrificial layer on a micro electro mechanical system substrate;
forming a MEMS device layer on the sacrificial layer;
temporarily bonding a carrier layer to the MEMS device layer via a temporary bonding layer, wherein the carrier layer is transparent and rigid;
releasing the MEMS device layer by processing the sacrificial layer;
debonding the carrier layer from the released MEMS device layer by exposure; and
and removing the temporary bonding layer.
2. The manufacturing method according to claim 1, wherein the carrier layer is a carrier wafer.
3. The manufacturing method according to claim 1, wherein the sacrificial layer is a silicon dioxide layer or a buried oxide layer, and a thickness of the sacrificial layer is in a range of 0.5 to 2 micrometers.
4. The manufacturing method according to claim 1, wherein the curing temperature of the temporary bonding layer is less than or equal to 150 ℃.
5. A method of manufacturing according to claim 1, wherein the thickness of the temporary bonding layer is in the range 1 to 10 microns or 2 to 5 microns.
6. The manufacturing method according to claim 1, further comprising:
a back hole is formed in the MEMS substrate opposite the MEMS device layer before releasing the MEMS device layer.
7. The manufacturing method according to claim 1, further comprising:
the MEMS substrate is processed such that it has a thickness of 250 microns or less or 100 microns or less.
8. The method of manufacturing of claim 1, wherein the mems device is a mems piezoelectric sensor.
9. A microelectromechanical systems device manufactured using the method of manufacturing of claim 1.
10. An electronic device comprising the microelectromechanical systems device of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111315844.1A CN114148987A (en) | 2021-11-08 | 2021-11-08 | Method for manufacturing micro-electro-mechanical system device, and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111315844.1A CN114148987A (en) | 2021-11-08 | 2021-11-08 | Method for manufacturing micro-electro-mechanical system device, and electronic apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114148987A true CN114148987A (en) | 2022-03-08 |
Family
ID=80459607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111315844.1A Pending CN114148987A (en) | 2021-11-08 | 2021-11-08 | Method for manufacturing micro-electro-mechanical system device, and electronic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114148987A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003066858A (en) * | 2001-08-23 | 2003-03-05 | Sony Corp | Method of manufacturing thin-film device substrate |
| US20030139018A1 (en) * | 2000-05-10 | 2003-07-24 | Kia Silverbrook | Method of fabricating devices incorporating microelectromechanicl systems using uv curable tapes |
| CN101213142A (en) * | 2005-06-30 | 2008-07-02 | 皇家飞利浦电子股份有限公司 | A method of manufacturing a mems element |
| EP2236456A1 (en) * | 2009-03-30 | 2010-10-06 | Nxp B.V. | Front end micro cavity |
| US20110136321A1 (en) * | 2009-12-03 | 2011-06-09 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing lamination type semiconductor integrated device |
| US20160031703A1 (en) * | 2014-08-04 | 2016-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing a microelectromechanical systems (mems) device with different electrical potentials and an etch stop |
| US20170200707A1 (en) * | 2009-05-12 | 2017-07-13 | The Board Of Trustees Of The University Of Illinois | Printed Assemblies of Ultrathin, Microscale Inorganic Light Emitting Diodes for Deformable and Semitransparent Displays |
-
2021
- 2021-11-08 CN CN202111315844.1A patent/CN114148987A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030139018A1 (en) * | 2000-05-10 | 2003-07-24 | Kia Silverbrook | Method of fabricating devices incorporating microelectromechanicl systems using uv curable tapes |
| JP2003066858A (en) * | 2001-08-23 | 2003-03-05 | Sony Corp | Method of manufacturing thin-film device substrate |
| CN101213142A (en) * | 2005-06-30 | 2008-07-02 | 皇家飞利浦电子股份有限公司 | A method of manufacturing a mems element |
| EP2236456A1 (en) * | 2009-03-30 | 2010-10-06 | Nxp B.V. | Front end micro cavity |
| US20170200707A1 (en) * | 2009-05-12 | 2017-07-13 | The Board Of Trustees Of The University Of Illinois | Printed Assemblies of Ultrathin, Microscale Inorganic Light Emitting Diodes for Deformable and Semitransparent Displays |
| US20110136321A1 (en) * | 2009-12-03 | 2011-06-09 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing lamination type semiconductor integrated device |
| US20160031703A1 (en) * | 2014-08-04 | 2016-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing a microelectromechanical systems (mems) device with different electrical potentials and an etch stop |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7781249B2 (en) | MEMS process and device | |
| US10829368B2 (en) | MEMS device and method of manufacturing a MEMS device | |
| KR100421217B1 (en) | Method for fabricating stiction-resistant micromachined structures | |
| US8637945B2 (en) | Component having a micromechanical microphone structure, and method for its production | |
| US20140016798A1 (en) | Mems device | |
| US10005659B2 (en) | Method for simultaneous structuring and chip singulation | |
| JP2005161516A (en) | Ultrathin form factor mems microphones and microspeakers | |
| JP2012506616A (en) | MEMS device packaged at wafer level | |
| EP1880977A2 (en) | Silicon on metal for MEMS devices | |
| CN114148987A (en) | Method for manufacturing micro-electro-mechanical system device, and electronic apparatus | |
| CN114148986A (en) | MEMS sensor, method of manufacturing the same, and electronic apparatus | |
| US20150175408A1 (en) | Method for thin film encapsulation (tfe) of a microelectromechanical system (mems) device and the mems device encapsulated thereof | |
| CN113264500A (en) | Micro-electromechanical device, manufacturing method thereof and electronic equipment | |
| WO2003104141A1 (en) | Method for forming a released microstructure suitable for a microelectromechanical device | |
| US7534641B2 (en) | Method for manufacturing a micro-electro-mechanical device | |
| JP2008298441A (en) | Method for manufacturing mechanical quantity detecting sensor | |
| JP5827365B2 (en) | Method for forming device packaged at wafer level | |
| JP5434037B2 (en) | Manufacturing method of semiconductor sensor and manufacturing method of piezoresistive element | |
| Du et al. | Single crystal silicon MEMS fabrication technology using proton-implantation smart-cut technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |